JPH0413850B2 - - Google Patents

Info

Publication number
JPH0413850B2
JPH0413850B2 JP57206012A JP20601282A JPH0413850B2 JP H0413850 B2 JPH0413850 B2 JP H0413850B2 JP 57206012 A JP57206012 A JP 57206012A JP 20601282 A JP20601282 A JP 20601282A JP H0413850 B2 JPH0413850 B2 JP H0413850B2
Authority
JP
Japan
Prior art keywords
etching
tank
liquid
wafer
solution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57206012A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5996735A (ja
Inventor
Kyohisa Fujinaga
Kazuaki Yano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP57206012A priority Critical patent/JPS5996735A/ja
Publication of JPS5996735A publication Critical patent/JPS5996735A/ja
Publication of JPH0413850B2 publication Critical patent/JPH0413850B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices

Landscapes

  • Weting (AREA)
JP57206012A 1982-11-26 1982-11-26 ウエツトエツチング槽及びそれを用いたウエツトエツチング装置 Granted JPS5996735A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57206012A JPS5996735A (ja) 1982-11-26 1982-11-26 ウエツトエツチング槽及びそれを用いたウエツトエツチング装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57206012A JPS5996735A (ja) 1982-11-26 1982-11-26 ウエツトエツチング槽及びそれを用いたウエツトエツチング装置

Publications (2)

Publication Number Publication Date
JPS5996735A JPS5996735A (ja) 1984-06-04
JPH0413850B2 true JPH0413850B2 (fr) 1992-03-11

Family

ID=16516441

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57206012A Granted JPS5996735A (ja) 1982-11-26 1982-11-26 ウエツトエツチング槽及びそれを用いたウエツトエツチング装置

Country Status (1)

Country Link
JP (1) JPS5996735A (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005504908A (ja) 2001-10-01 2005-02-17 エフエスアイ インターナショナル 流体を滴下させる装置と、この方法
KR100432495B1 (ko) * 2001-12-28 2004-05-22 주식회사 실트론 실리콘 웨이퍼 에칭장치

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS587709B2 (ja) * 1980-04-25 1983-02-10 沖電気工業株式会社 エツチング装置

Also Published As

Publication number Publication date
JPS5996735A (ja) 1984-06-04

Similar Documents

Publication Publication Date Title
TW322605B (fr)
CN111344839B (zh) 衬底处理方法及衬底处理装置
US4557785A (en) Apparatus for wet processing
JP3074366B2 (ja) 処理装置
US7918242B2 (en) Processing solution supply system, processing solution supply method and recording medium for storing processing solution supply control program
US20110290279A1 (en) Substrate processing apparatus, substrate processing method, and storage medium storing computer program for performing substrate processing method
US8313580B2 (en) Method for processing a substrate using a single phase proximity head having a controlled meniscus
JP7089902B2 (ja) 基板処理装置、基板処理装置における処理液排出方法、基板処理装置における処理液交換方法、基板処理装置における基板処理方法
US6199564B1 (en) Substrate processing method and apparatus
US4902608A (en) Immersion development and rinse machine and process
KR900001651B1 (ko) 표면 처리방법 및 그 장치
TW202141614A (zh) 處理液溫度調整方法、基板處理方法、處理液溫度調整裝置、及基板處理系統
KR101967053B1 (ko) 웨이퍼 세정장비의 온도제어장치 및 이를 이용한 온도제어방법
JP3254520B2 (ja) 洗浄処理方法及び洗浄処理システム
US5025280A (en) Immersion development and rinse machine and process
JP6632684B2 (ja) 基板液処理装置及び基板液処理方法並びに基板液処理プログラムを記憶したコンピュータ読み取り可能な記憶媒体
KR20170037519A (ko) 현상 처리 방법, 컴퓨터 기억 매체 및 현상 처리 장치
JP3625120B2 (ja) 基板処理装置
KR102769323B1 (ko) 기판 처리 장치 및 기판 처리 방법
CN223793055U (zh) 一种蚀刻设备
CN111276431B (zh) 槽式湿法刻蚀装置
JP3259412B2 (ja) ウエハ洗浄方法
JPS58123730A (ja) 半導体ウエハ−エツチング装置
JPS6016427A (ja) 酸化膜エツチング装置
CN111696883A (zh) 混液装置及其浓度调节方法