JPH04145128A - Silicon-modified propargyl resin composition and resin composition containing the same for sealing semiconductor - Google Patents
Silicon-modified propargyl resin composition and resin composition containing the same for sealing semiconductorInfo
- Publication number
- JPH04145128A JPH04145128A JP26644790A JP26644790A JPH04145128A JP H04145128 A JPH04145128 A JP H04145128A JP 26644790 A JP26644790 A JP 26644790A JP 26644790 A JP26644790 A JP 26644790A JP H04145128 A JPH04145128 A JP H04145128A
- Authority
- JP
- Japan
- Prior art keywords
- tables
- formulas
- resin
- propargyl
- resin composition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000011342 resin composition Substances 0.000 title claims abstract description 16
- 239000004065 semiconductor Substances 0.000 title claims abstract description 12
- 125000001494 2-propynyl group Chemical group [H]C#CC([H])([H])* 0.000 title claims description 12
- 238000007789 sealing Methods 0.000 title abstract description 4
- 229920005989 resin Polymers 0.000 claims abstract description 38
- 239000011347 resin Substances 0.000 claims abstract description 38
- -1 propargyl ether compound Chemical class 0.000 claims abstract description 26
- 235000013824 polyphenols Nutrition 0.000 claims abstract description 14
- 229920001296 polysiloxane Polymers 0.000 claims abstract description 13
- 150000008442 polyphenolic compounds Chemical class 0.000 claims abstract description 11
- 239000000203 mixture Substances 0.000 claims abstract description 10
- 239000003822 epoxy resin Substances 0.000 claims description 14
- 229920000647 polyepoxide Polymers 0.000 claims description 14
- 125000001246 bromo group Chemical group Br* 0.000 claims description 11
- 238000005538 encapsulation Methods 0.000 claims description 10
- PEEHTFAAVSWFBL-UHFFFAOYSA-N Maleimide Chemical compound O=C1NC(=O)C=C1 PEEHTFAAVSWFBL-UHFFFAOYSA-N 0.000 claims description 8
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 6
- 229920001187 thermosetting polymer Polymers 0.000 claims description 6
- HRDCVMSNCBAMAM-UHFFFAOYSA-N 3-prop-2-ynoxyprop-1-yne Chemical class C#CCOCC#C HRDCVMSNCBAMAM-UHFFFAOYSA-N 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims 11
- 229910000679 solder Inorganic materials 0.000 abstract description 16
- 150000001875 compounds Chemical class 0.000 abstract description 6
- LJZPPWWHKPGCHS-UHFFFAOYSA-N propargyl chloride Chemical compound ClCC#C LJZPPWWHKPGCHS-UHFFFAOYSA-N 0.000 abstract description 4
- 238000006243 chemical reaction Methods 0.000 description 10
- 229920003192 poly(bis maleimide) Polymers 0.000 description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 10
- XQUPVDVFXZDTLT-UHFFFAOYSA-N 1-[4-[[4-(2,5-dioxopyrrol-1-yl)phenyl]methyl]phenyl]pyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C(C=C1)=CC=C1CC1=CC=C(N2C(C=CC2=O)=O)C=C1 XQUPVDVFXZDTLT-UHFFFAOYSA-N 0.000 description 9
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 9
- 238000010521 absorption reaction Methods 0.000 description 8
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 7
- 238000005452 bending Methods 0.000 description 6
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 6
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 5
- 238000010992 reflux Methods 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- 239000003054 catalyst Substances 0.000 description 4
- XLJMAIOERFSOGZ-UHFFFAOYSA-M cyanate Chemical compound [O-]C#N XLJMAIOERFSOGZ-UHFFFAOYSA-M 0.000 description 4
- 210000003127 knee Anatomy 0.000 description 4
- 150000003923 2,5-pyrrolediones Chemical class 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 230000009477 glass transition Effects 0.000 description 3
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 3
- 238000007654 immersion Methods 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000012778 molding material Substances 0.000 description 3
- 229920003986 novolac Polymers 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 238000005292 vacuum distillation Methods 0.000 description 3
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- ADCOVFLJGNWWNZ-UHFFFAOYSA-N antimony trioxide Chemical compound O=[Sb]O[Sb]=O ADCOVFLJGNWWNZ-UHFFFAOYSA-N 0.000 description 2
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 125000003700 epoxy group Chemical group 0.000 description 2
- 150000002460 imidazoles Chemical class 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 150000003003 phosphines Chemical class 0.000 description 2
- 238000006116 polymerization reaction Methods 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 150000003512 tertiary amines Chemical class 0.000 description 2
- UFFVWIGGYXLXPC-UHFFFAOYSA-N 1-[2-(2,5-dioxopyrrol-1-yl)phenyl]pyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C1=CC=CC=C1N1C(=O)C=CC1=O UFFVWIGGYXLXPC-UHFFFAOYSA-N 0.000 description 1
- AQGZJQNZNONGKY-UHFFFAOYSA-N 1-[4-(2,5-dioxopyrrol-1-yl)phenyl]pyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C1=CC=C(N2C(C=CC2=O)=O)C=C1 AQGZJQNZNONGKY-UHFFFAOYSA-N 0.000 description 1
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 1
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 description 1
- 239000004641 Diallyl-phthalate Substances 0.000 description 1
- 241000238413 Octopus Species 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- AUYQDAWLRQFANO-UHFFFAOYSA-N [4-[(4-cyanatophenyl)methyl]phenyl] cyanate Chemical compound C1=CC(OC#N)=CC=C1CC1=CC=C(OC#N)C=C1 AUYQDAWLRQFANO-UHFFFAOYSA-N 0.000 description 1
- INHGSGHLQLYYND-UHFFFAOYSA-N [4-[2-(4-cyanatophenyl)-1,1,1,3,3,3-hexafluoropropan-2-yl]phenyl] cyanate Chemical compound C=1C=C(OC#N)C=CC=1C(C(F)(F)F)(C(F)(F)F)C1=CC=C(OC#N)C=C1 INHGSGHLQLYYND-UHFFFAOYSA-N 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 150000004982 aromatic amines Chemical class 0.000 description 1
- 150000004984 aromatic diamines Chemical class 0.000 description 1
- DVZDURSBYXBFDW-UHFFFAOYSA-N benzene cyanic acid Chemical compound OC#N.OC#N.C1=CC=CC=C1 DVZDURSBYXBFDW-UHFFFAOYSA-N 0.000 description 1
- QUDWYFHPNIMBFC-UHFFFAOYSA-N bis(prop-2-enyl) benzene-1,2-dicarboxylate Chemical compound C=CCOC(=O)C1=CC=CC=C1C(=O)OCC=C QUDWYFHPNIMBFC-UHFFFAOYSA-N 0.000 description 1
- 239000004841 bisphenol A epoxy resin Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 229930003836 cresol Natural products 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 1
- 238000006266 etherification reaction Methods 0.000 description 1
- 239000003063 flame retardant Substances 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 238000013003 hot bending Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 125000005439 maleimidyl group Chemical group C1(C=CC(N1*)=O)=O 0.000 description 1
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 description 1
- 150000001451 organic peroxides Chemical class 0.000 description 1
- 150000002989 phenols Chemical class 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000002685 polymerization catalyst Substances 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- YORCIIVHUBAYBQ-UHFFFAOYSA-N propargyl bromide Chemical compound BrCC#C YORCIIVHUBAYBQ-UHFFFAOYSA-N 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
- 229920006337 unsaturated polyester resin Polymers 0.000 description 1
- 230000037303 wrinkles Effects 0.000 description 1
Landscapes
- Silicon Polymers (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Other Resins Obtained By Reactions Not Involving Carbon-To-Carbon Unsaturated Bonds (AREA)
- Epoxy Resins (AREA)
Abstract
Description
【発明の詳細な説明】
(産業上の利用分野)
本発明は、シリコーン変性プロパルギル樹脂組成物及び
これを含有する、ガラス転移点(以下Tgという)が高
く、耐湿性、相溶性、難燃性に優れ、かつ低応力特性に
優れた半導体封止用樹脂組成物に関するものである。Detailed Description of the Invention (Field of Industrial Application) The present invention provides a silicone-modified propargyl resin composition and a silicone-modified propargyl resin composition containing the same, which has a high glass transition point (hereinafter referred to as Tg), moisture resistance, compatibility, and flame retardancy. The present invention relates to a resin composition for semiconductor encapsulation that has excellent properties and low stress properties.
(従来技術)
近年IC,LSI、トランジスター、ダイオードなどの
半導体素子や電子回路等の封止には特性、コスト等の点
からエポキシ樹脂組成物が一般的に用いられている。(Prior Art) In recent years, epoxy resin compositions have been commonly used for sealing semiconductor elements such as ICs, LSIs, transistors, diodes, and electronic circuits from the viewpoint of characteristics, cost, and the like.
しかし、電子部品の量産性指向、高集積化や表面実装化
の方向に進んで来ておりこれに伴い封止樹脂に対する要
求は厳しくなってきている。However, as electronic components are becoming more mass-producible, more highly integrated, and more surface-mounted, demands on sealing resins are becoming more severe.
特に高集積化に伴うチップの大型化、パッケージの薄肉
化や表面実装時における半田浸漬(200〜3f)O’
C)によって装置にクラックが発生し易くなっており、
信頼性向上のために半導体封止用樹脂としては低応力特
性と耐熱性が強く望まれている。In particular, chips become larger due to higher integration, packages become thinner, and solder immersion (200 to 3f) O' during surface mounting.
Due to C), cracks are likely to occur in the equipment,
In order to improve reliability, low stress characteristics and heat resistance are strongly desired for semiconductor encapsulation resins.
半導体封止用樹脂としては現在エポキシ樹脂が主流であ
るが、耐熱性という点ではエポキシ樹脂を用いている限
り改良に限界があり、表面実装時の半田浸漬後の信頼性
の高いものが得られていない。Epoxy resin is currently the mainstream resin for semiconductor encapsulation, but there are limits to its improvement in terms of heat resistance as long as epoxy resin is used, and it is difficult to obtain a highly reliable product after solder immersion during surface mounting. Not yet.
これらの半田耐熱性に対処するには樹脂特性として低応
力であり、かっTgが高く半田浴温度以上であることが
望まれている。In order to cope with these solder heat resistance, it is desired that the resin properties be low stress, high Tg, and higher than the solder bath temperature.
エポキシ樹脂に代わる高耐熱性を有する樹脂としてはマ
レイミド樹脂が注目されてきているが、ビスマレイミド
と芳香族ジアミンとの反応によって得られるアミン変性
マレイミド樹脂は、乾燥時の耐熱性には優れているが、
吸水率が大きく、吸湿時の半田浸漬でクラックを発生し
、信頼性に乏しい欠点がある。Maleimide resins are attracting attention as a resin with high heat resistance to replace epoxy resins, but amine-modified maleimide resins obtained by the reaction of bismaleimide and aromatic diamines have excellent heat resistance during drying. but,
It has a high water absorption rate, and cracks occur when immersed in solder when moisture is absorbed, resulting in poor reliability.
マレイミド樹脂としては、この他に、ポリマレイミドと
アルケニルフェノール類またはアルケニルフェニルエー
テル類などを重合触媒存在丁で反応させる例(特開昭5
2−994.58−117219.61−95012.
62−11716.63−230728号公報)もある
が、アミン変性マレイミド樹脂と同様に硬化物は堅いた
め、低応力特性に劣る欠点がある。Other maleimide resins include examples in which polymaleimide and alkenylphenols or alkenyl phenyl ethers are reacted in the presence of a polymerization catalyst (Japanese Patent Application Laid-open No.
2-994.58-117219.61-95012.
62-11716.63-230728), but like the amine-modified maleimide resin, the cured product is hard, so it has the disadvantage of poor low stress properties.
低応力特性の改善策として各種シリコーン化合物の添加
が試みられているが、相溶性が苦しく劣り、強度が低下
し、吸水率が大きくて、耐湿性、信頼性に欠け、実用上
問題点が多く残る。Attempts have been made to add various silicone compounds as a measure to improve low stress properties, but they suffer from poor compatibility, low strength, high water absorption, lack moisture resistance and reliability, and have many practical problems. remain.
(発明が解決しようとする課M)
本発明の目的とするところは、シリコーン変性プロパル
ギル樹脂組成物及びこれを含有する、相溶性が良く、一
般の特性を低下させることなく、耐湿性、難燃性、低応
力特性に優れ、かつ高耐熱性を有し、半田浸漬後の信頼
性に非常に優れた半導体封止用樹脂組成物を提供するこ
とにある。(Problem M to be Solved by the Invention) The object of the present invention is to provide a silicone-modified propargyl resin composition and a silicone-modified propargyl resin composition containing the same, which has good compatibility, moisture resistance, and flame retardancy without deteriorating general properties. The object of the present invention is to provide a resin composition for semiconductor encapsulation, which has excellent properties such as high heat resistance and low stress properties, high heat resistance, and extremely high reliability after being immersed in solder.
(課題を解決するための手段)
第一の発明は、(A)下記式CI)で示される臭化ポリ
フェノール類のプロパルギルエーテル化合物と、
CR:H又は−CH2−C=CH
但しH/−CH2−C=CHがθ〜3.0R1: −H
,−CH3、−CF3、=()、又ハ+OHR2ニーH
1−CH3、又は−CF3
0≦n<30
m、m’はそれぞれのベンゼン環に結合する臭素個数の
平均値であり、0<m<4.0<m’<3であ全体の臭
素個数の平均値tは、0<1≦2である。)(B)下記
式(II )で示されるポリシロキサンと、(XニーH
又は−+CH2)30cH2cH−CHa、ゝ0/
ぞれ独立に選択された基
j:1〜10o)
を反応させてなることを特徴とするシリコーン変性プロ
パルギル樹脂組成物であり、
第二の発明は、(A)下記式CI)で示される臭化ポリ
フェノール類のプロパルギルエーテル化合物と
(R:I(又は−GHz−CミCH
但しH/−CH2−C=CHカO〜3.0R1: −H
,−CH3、−CF3、=()、又バーQ−OHR,ニ
ーH1−CH3、又i、t−cF30≦n<30
m、m’はそれぞれのベンゼン環に結合する臭素個数の
平均値であり、0<m<4、o<m′〈3であ全体の臭
素個数の平均値tは、0<1≦2である。)(B)下記
式〔TI〕で示されるポリシロキサンと(X : −H
又バーfCH2>30CH2CH−CH2、ゝ0/
R3ニーCHz、−CF3、−()、又はXの中からそ
れぞれ独立に選択された基
j:1〜100)
を反応させてなるシワコーン変性プロパルギル樹脂(A
B)と、
(C)熱硬化性樹脂とを含有又は反応させてなることを
特徴とする半導体封止用樹脂組成物である。(Means for Solving the Problems) The first invention provides (A) a propargyl ether compound of brominated polyphenols represented by the following formula CI), and CR:H or -CH2-C=CH where H/-CH2 -C=CH is θ~3.0R1: -H
, -CH3, -CF3, = (), also C + OHR2 knee H
1-CH3, or -CF3 0≦n<30 m, m' are the average values of the number of bromines bonded to each benzene ring, and 0<m<4.0<m'<3 means the total number of bromines The average value t is 0<1≦2. ) (B) A polysiloxane represented by the following formula (II) and
or -+CH2)30cH2cH-CHa, ゝ0/each independently selected group j: 1 to 10o) is reacted, and the second invention is a silicone-modified propargyl resin composition, characterized in that it is formed by reacting (A) A propargyl ether compound of brominated polyphenols represented by the following formula CI) and
, -CH3, -CF3, = (), also bar Q-OHR, n H1-CH3, also i, t-cF30≦n<30 m, m' is the average value of the number of bromines bonded to each benzene ring 0<m<4, o<m'<3, and the average value t of the total number of bromines is 0<1≦2. ) (B) Polysiloxane represented by the following formula [TI] and (X: -H
In addition, wrinkle cone-modified propargyl resin ( A
A resin composition for semiconductor encapsulation characterized by containing or reacting B) and (C) a thermosetting resin.
(作用)
本発明において用いられる臭化ポリフェノール類のプロ
パルギルエーテル化合物は、式CI)で示される臭化ポ
リフェノール類を、塩化プロパルギル又は臭化プロパル
ギルと反応させ、プロパルギルエーテル化したものであ
る。(Function) The propargyl ether compound of brominated polyphenols used in the present invention is obtained by reacting the brominated polyphenol represented by formula CI) with propargyl chloride or propargyl bromide to convert it into propargyl ether.
nは、臭化ポリフェノール類が弔−化合物の場合には、
0内に示された構造準位の繰返し数を示し、又分子量の
異なる2種以上の化合物がら構成される場合には、平均
経返し数を示し、0≦n<30である。好ましくは、0
≦n≦10が良い。分子量が大き過ぎると、融点及び溶
融粘度も高くなって作業が困難になる。When the brominated polyphenol is a compound, n is
Indicates the number of repetitions of the structural level shown within 0, and when composed of two or more types of compounds with different molecular weights, indicates the average number of repetitions, and 0≦n<30. Preferably 0
≦n≦10 is good. If the molecular weight is too large, the melting point and melt viscosity will also become high, making work difficult.
m、m’はそれぞれのベンゼン環に結合する臭素個数の
平均値であり、0<m<4、O<m’<3であ全体の臭
素個数の平均値tは、0<t″≦2である。m and m' are the average values of the number of bromines bonded to each benzene ring, and if 0<m<4 and O<m'<3, the average value t of the total number of bromines is 0<t''≦2 It is.
臭素個数が少なすぎると、難燃性が向上しないので、好
ましくは、0.5≦t≦2が良い。If the number of bromines is too small, flame retardancy will not improve, so preferably 0.5≦t≦2.
プロパルギルエーテル化率は、フェノール性OH基に対
し、50%以上100%以下が好ましい。50%未満で
はフェノール性OH基が多量に残存するため、吸水率が
大きくなり、耐湿性、耐半田クラック性が向上しない。The propargyl etherification rate is preferably 50% or more and 100% or less based on the phenolic OH group. If it is less than 50%, a large amount of phenolic OH groups remain, resulting in a high water absorption rate and no improvement in moisture resistance and solder crack resistance.
本発明のプロパルギルエーテル化合物は、下記式(m)
のポリフェノール類のプロパルギルエーテル化合物と併
用して差し支えない。The propargyl ether compound of the present invention has the following formula (m)
It may be used in combination with propargyl ether compounds of polyphenols.
(R1ニーH1−CH3、−CF3、=()、又は−J
oHR2ニーH5−CH3、又は−CF3 0≦n<3
0)本発明において用いられるポリシロキサンは、分子
内に2個以上の反応性の基を有するもので、式(II
)で示され、その重合度jは1〜100の範囲のもので
ある。重合度が100より大きい場合、相溶性が低下し
てしまう。(R1 knee H1-CH3, -CF3, =(), or -J
oHR2 knee H5-CH3, or -CF3 0≦n<3
0) The polysiloxane used in the present invention has two or more reactive groups in the molecule, and has the formula (II
), and its degree of polymerization j is in the range of 1 to 100. If the degree of polymerization is greater than 100, compatibility will decrease.
ポリシロキサンは、グロバルギルエーテル化合物100
重量部に対し、2〜100重量部が良い。少な過ぎると
、低応力特性が得られない。多過ぎると、機械強度、T
gが下がり、半田浸漬時にクラックを発生する。Polysiloxane is globargyl ether compound 100
It is preferably 2 to 100 parts by weight. If it is too small, low stress properties cannot be obtained. If there is too much, the mechanical strength, T
g decreases and cracks occur during solder immersion.
プロパルギルエーテル化合物とポリシロキサンは予め必
要に応じて触媒を用い反応させて、シリコーン変性プロ
パルギル樹脂とすることが必須である。ポリシロキサン
は、相溶性が悪いため、予め反応させておかないと、シ
リコーンがブリードして成形品の外観が不良になったり
、強度が著しく低下する。上記反応の触媒は特に限定さ
れるものではないが、−例を示すと、(II )式にお
けるXが−Hの場合は、ヒドロシリル基とオレフィンと
の反応に使用される触媒である塩化白金酸などの場合は
、エポキシ基とフェノールとの反応に使用される触媒で
ある3級アミン類、イミダゾール類、ホスフィン類など
を用いることができる。特に前者のXが−Hのボ「ノシ
ロキサンは、耐湿性が優れている。It is essential that the propargyl ether compound and the polysiloxane are reacted in advance using a catalyst, if necessary, to obtain a silicone-modified propargyl resin. Since polysiloxane has poor compatibility, if it is not reacted in advance, the silicone will bleed and the appearance of the molded product will be poor and the strength will be significantly reduced. The catalyst for the above reaction is not particularly limited, but for example, when X in formula (II) is -H, chloroplatinic acid, which is a catalyst used for the reaction between a hydrosilyl group and an olefin, is used. In such cases, tertiary amines, imidazoles, phosphines, etc., which are catalysts used for the reaction between epoxy groups and phenol, can be used. In particular, the former siloxane in which X is -H has excellent moisture resistance.
本発明において用いられる熱硬化性樹脂としては、エポ
キシ樹脂、シアネート樹脂、マレイミド樹脂、不飽和ポ
リエステル樹脂、ジアリルフタレート樹脂又はこれらの
2種以上の併用などを挙げることができる。Examples of the thermosetting resin used in the present invention include epoxy resin, cyanate resin, maleimide resin, unsaturated polyester resin, diallyl phthalate resin, or a combination of two or more of these resins.
エポキシ樹脂としては、分子内に少なくとも2個以上の
エポキシ基を有するもので、例えば、ビスフェノールA
系エポキシ樹脂、ビスフェノールF系エポキシ樹脂、臭
素化エポキシ樹脂、フェノール・ノボラック系エポキシ
樹脂、クレゾールノボラック系エポキシ樹脂、その他の
多官能エポキシ樹脂を用いることができる。Epoxy resins have at least two or more epoxy groups in their molecules, such as bisphenol A
epoxy resins, bisphenol F-based epoxy resins, brominated epoxy resins, phenol-novolac-based epoxy resins, cresol novolac-based epoxy resins, and other polyfunctional epoxy resins can be used.
シアネート樹脂としては、分子内に少なくとも2個以上
のシアネート基(−0CEN)を有するもので、例えば
、ジシアネートベンゼン、ビス(4−シアネートフェニ
ル)メタン、ビス(365−ジメチル。The cyanate resin has at least two or more cyanate groups (-0CEN) in its molecule, such as dicyanate benzene, bis(4-cyanatophenyl)methane, and bis(365-dimethyl).
4−シアネートフェニル)メタン、2,2−ビス(4−
シアネートフェニル)プロパン、2,2−ビス(4−シ
アネートフェニル) −1,1,1,3,3,3−ヘキ
サフロロプロパン、トリシアネートベンゼン、フェノー
ル・ノボラックのポリシアネートなどを用いることがで
きる。4-cyanatophenyl)methane, 2,2-bis(4-
Usable examples include cyanatophenyl)propane, 2,2-bis(4-cyanatophenyl)-1,1,1,3,3,3-hexafluoropropane, tricyanatebenzene, and phenol novolac polycyanates.
エポキシ樹脂、シアネート樹脂又はこの両者を配合する
ことによって、より好ましくは予め反応させることによ
って、作業性、硬化性、素子及びυ−ドフレームとの密
着性がより向上する。しかし、多過ぎると耐熱性、難燃
性、耐半田クラック性が悪化する。By blending an epoxy resin, a cyanate resin, or both, and more preferably reacting them in advance, workability, curability, and adhesion to the element and the υ-deframe are further improved. However, if the amount is too high, heat resistance, flame retardance, and solder crack resistance will deteriorate.
マレイミド樹脂は、分子内に少なくとも2個以上のマレ
イミド基を有する化合物、例えば、N、N’−−フェニ
レンビスマレイミド、N、N’−p−フェニレンビスマ
レイミド、N、N′−m−)−ルイレンビスマレイミド
、N、N’−4,4’−ビフェニレンビスマレイミド、
N、N’−4,4’−(3,3’−ジメチル−ビフェニ
レンビスマレイミド、N、N’−4,4’−(3,3’
−ジメチルジフェニルメタン〕ビスマレイミド、N、N
’ −4,4’ −(3,3’−ジエチルジフェニルメ
タン〕ビスマレイミド、N。Maleimide resin is a compound having at least two or more maleimide groups in the molecule, such as N,N'--phenylene bismaleimide, N,N'-p-phenylene bismaleimide, N,N'-m-)- Luylene bismaleimide, N,N'-4,4'-biphenylene bismaleimide,
N, N'-4,4'-(3,3'-dimethyl-biphenylene bismaleimide, N, N'-4,4'-(3,3'
-dimethyldiphenylmethane] bismaleimide, N, N
'-4,4'-(3,3'-diethyldiphenylmethane)bismaleimide, N.
N’−4,4’−ジフェニルメタンビスマレイミド、N
、N’−4,4′−ジフェニルプロパンビスマレイミド
、N、N’−4,4′−ジフェニルエーテルビスマレイ
ミド、N、N’−3,3′−ジフェニルスルホンビスマ
レイミド、N、N’−4,4′−ジフェニルスルホンビ
スマレイミド、−a式(IV)又は(V)で示されるポ
リマレイミドなど
(RやニーH、アルキル基又はフェニル基 0<F
<10)(0<4<10)
または、これらの化合物と芳香族アミン類、芳香族シア
ネート類、あるいはアリルエーテル化フェノール類とを
反応させて得られる変性マレイミド樹脂などを挙げるこ
とができる。これらは2種以上含まれていても何ら差し
支えない。N'-4,4'-diphenylmethane bismaleimide, N
, N'-4,4'-diphenylpropane bismaleimide, N, N'-4,4'-diphenyl ether bismaleimide, N, N'-3,3'-diphenylsulfone bismaleimide, N, N'-4, 4'-diphenylsulfone bismaleimide, -a polymaleimide represented by formula (IV) or (V), etc. (R, knee H, alkyl group or phenyl group 0<F
<10) (0<4<10) Alternatively, modified maleimide resins obtained by reacting these compounds with aromatic amines, aromatic cyanates, or allyl etherified phenols can be mentioned. There is no problem even if two or more of these are included.
マレイミド樹脂を配合することによって、より好ましく
は予め反応させることによって、硬化性、作業性がより
向上する。しかし多過ぎると曲げ弾性率と吸水率が大き
くなり、耐半田クラック性、信頼性が悪化する。By blending a maleimide resin, more preferably by reacting it in advance, curability and workability are further improved. However, if the amount is too large, the bending elastic modulus and water absorption rate will increase, resulting in poor solder crack resistance and reliability.
これらの熱硬化性樹脂の量は、シリコーン変性プロパル
ギル樹脂100重量部に対し、20〜500重量部が良
い。The amount of these thermosetting resins is preferably 20 to 500 parts by weight per 100 parts by weight of the silicone-modified propargyl resin.
本発明のシリコーン変性プロパルギル樹脂組成物及びこ
れを含有する半導体封止用樹脂組成物は、必要に応じて
、三酸化アンチモンなどの他の難燃剤、3級アミン類、
イミダゾール類、ホスフィン類、有機過酸化物などの硬
化促進剤を併用することもできる。The silicone-modified propargyl resin composition of the present invention and the semiconductor encapsulation resin composition containing the same may optionally contain other flame retardants such as antimony trioxide, tertiary amines,
Curing accelerators such as imidazoles, phosphines, and organic peroxides can also be used in combination.
(実施例)
実施例1〜2
撹拌装置、還流冷却器、温度計及び滴下ロートを付けた
反応容器に、第1表の処方に従って、水酸化力IJウム
と、水/アセトン(1、/ 1 )の混合溶媒を入れて
溶解させ、これに臭化ポリフェノール類を添加し、溶解
させた。この溶液を加熱し、塩化プロパルギルを滴rし
て、還流下3時間反応させた。その後、アセトンと未反
応の塩化プロパルギルを留去し、トルエン1uを添加し
た。分液ロートに移し、水洗を3回行い、エバポレータ
ーで溶媒を除去した。得られたプロパルギルエーテル化
合物の反応率(フェノール性水酸基の反応率)を第1表
に示した。(Example) Examples 1 to 2 In a reaction vessel equipped with a stirring device, a reflux condenser, a thermometer, and a dropping funnel, IJum hydroxide and water/acetone (1,/1 ) was added and dissolved, and brominated polyphenols were added and dissolved. This solution was heated, propargyl chloride was added dropwise, and the mixture was reacted under reflux for 3 hours. Thereafter, acetone and unreacted propargyl chloride were distilled off, and 1 u of toluene was added. The mixture was transferred to a separating funnel, washed with water three times, and the solvent was removed using an evaporator. Table 1 shows the reaction rate (reaction rate of phenolic hydroxyl group) of the obtained propargyl ether compound.
実施例3
撹拌装置、還流冷却器、及び温度計を付けた反応容器に
、実施例1のプロパルギルエーテル化合物とトルエンを
第2表の処方に従って入れ、均一に溶解してから、塩化
白金酸溶液を添加した。これにジヒドロポリシロキサン
を加え、80°Cで2時間反応させた。その後、還流冷
却器を減圧蒸留装置に代えて溶媒を除去し、更に減圧下
(約20111 !l Hg )180°Cで4時間、
200 ’Cで4時間反応させた。得られた樹脂は均質
で、融点を第2表に示した。Example 3 Into a reaction vessel equipped with a stirrer, a reflux condenser, and a thermometer, put the propargyl ether compound of Example 1 and toluene according to the recipe in Table 2, dissolve them uniformly, and then add the chloroplatinic acid solution. Added. Dihydropolysiloxane was added to this and reacted at 80°C for 2 hours. Thereafter, the reflux condenser was replaced with a vacuum distillation apparatus to remove the solvent, and the mixture was further heated at 180°C under reduced pressure (approximately 20111 !L Hg) for 4 hours.
The reaction was carried out at 200'C for 4 hours. The resulting resin was homogeneous and the melting point is shown in Table 2.
実施例4〜5
撹拌装置、減圧蒸留装置及び温度計を付けた反応容器に
、実施例1,2のプロパルギルエーテル化合物とトルエ
ンを第2表の処方に従って入れ、均一に溶解してから、
塩化白金酸溶液を添加した。Examples 4 to 5 The propargyl ether compounds of Examples 1 and 2 and toluene were placed in a reaction vessel equipped with a stirring device, a vacuum distillation device, and a thermometer according to the recipe in Table 2, and the mixture was uniformly dissolved.
A chloroplatinic acid solution was added.
これにジヒドロポリシロキサンを加え、80°Cで2時
間反応させた。その後、還流冷却器を減圧蒸留装置に代
えて溶媒を除去した。更に150°Cに加熱して、N、
N’−4,4’−ジフェニルメタンビスマレイミド又は
エポキシ樹脂を加え、実施例4は35分間、実施例5は
100分間反応させた。得られた樹脂は均質で、融点を
第2表に示した。Dihydropolysiloxane was added to this and reacted at 80°C for 2 hours. Thereafter, the reflux condenser was replaced with a vacuum distillation apparatus to remove the solvent. Further heat to 150°C, add N,
N'-4,4'-diphenylmethane bismaleimide or epoxy resin was added and reacted for 35 minutes in Example 4 and 100 minutes in Example 5. The resulting resin was homogeneous and the melting point is shown in Table 2.
実施例6〜8
第3表に示す配合に従って、実施例3〜5の樹脂を熱ロ
ールで混練して成形材料を得た。得られた成形材料をト
ランスファー成形により180°C53分で成形しフク
レの無い光沢の有る成形品が得られた。この成形品をさ
らに180°C18時間後硬化を行い特性を評価した。Examples 6 to 8 According to the formulations shown in Table 3, the resins of Examples 3 to 5 were kneaded using hot rolls to obtain molding materials. The obtained molding material was molded by transfer molding at 180° C. for 53 minutes to obtain a glossy molded product without blisters. This molded article was further cured at 180° C. for 18 hours and its properties were evaluated.
結果を第3表に示す。The results are shown in Table 3.
実施例3〜5の樹脂を用いた実施例6〜8の成形材料は
、曲げ弾性率が小さく、低応力である。The molding materials of Examples 6 to 8 using the resins of Examples 3 to 5 have a small bending modulus and low stress.
しかもガラス転移温度が高< 、 260°Cでの曲げ
強度も大きく、耐熱性、耐半田クラック性、難燃性に優
れ、吸水率も小さい。Moreover, it has a high glass transition temperature, high bending strength at 260°C, excellent heat resistance, solder crack resistance, and flame retardancy, and low water absorption.
比較例1
マレイミド樹脂を用い、実施例6と同様に行った。成形
品の外観、熱時曲げ強度、ガラス転移温度は良好である
が、常態及び熱時の曲げ弾性率と吸水率が大きく、耐半
田クラック性は充分でなかった。難燃性はV−1であっ
た。Comparative Example 1 The same procedure as in Example 6 was carried out using maleimide resin. Although the appearance, hot bending strength, and glass transition temperature of the molded product were good, the bending elastic modulus and water absorption in normal and hot conditions were large, and the solder crack resistance was insufficient. Flame retardancy was V-1.
比較例2
マレイミド樹脂にジヒドロポリシロキサンを配合して、
実施例6と同様に行った。常態及び熱時の曲げ弾性率は
小さいが、成形品表面にシリコーン成分が分離し、成形
品の外観は良くなかった。Comparative Example 2 Dihydropolysiloxane was blended with maleimide resin,
The same procedure as in Example 6 was carried out. Although the flexural modulus under normal conditions and when heated was small, the silicone component separated on the surface of the molded product, and the appearance of the molded product was not good.
曲げ強度が低下し、吸水率が大きく、耐半田クラック性
も不良であった。The bending strength was decreased, the water absorption rate was high, and the solder crack resistance was also poor.
比較例3 エポキシ樹脂を用い、実施例8と同様に行った。Comparative example 3 The same procedure as in Example 8 was carried out using an epoxy resin.
成形品の一外観、常態曲げ強度は良好であるが、耐半田
クラック性は不良であった。Although the molded product had good appearance and normal bending strength, its solder crack resistance was poor.
(発明の効果)
本発明による半導体封止用樹脂を用いた組成物の硬化物
は高Tgであり、難燃性、耐湿性及び熱時の強度に優れ
ているため封止体の耐半田クラック性が良く、かつ低応
力であり耐ヒートサイクル性にも優れており、半導体封
止用樹脂組成物として非常に信頼性の高い優れたもので
ある。(Effects of the Invention) The cured product of the composition using the resin for semiconductor encapsulation according to the present invention has a high Tg and is excellent in flame retardancy, moisture resistance, and strength under heat, so it is resistant to solder cracks in the encapsulation. It has good properties, low stress, and excellent heat cycle resistance, making it an excellent and highly reliable resin composition for semiconductor encapsulation.
第1表
(往) *l: 7x/−ル樹脂(住人デュレXTIH
PR−51470)をぬ去により臭素化した。n−3、
し=10第2表
一口+、 = 、、 01つ
第:322
(41ml:日本ポリイミド■製 ケルイミド601*
20日蛸l鴻夕FIICN−102
*3 イトυデュレ石檎製 PR−5147ON−’=
y−i−+r、−mFl(125’Cl00g!1(t
II>(@TAQ水””。Table 1 (old) *l: 7x/-le resin (resident dure XTIH
PR-51470) was brominated by stripping. n-3,
= 10 Table 2 Sip +, = ,, 01st: 322 (41ml: Made by Nippon Polyimide ■ Kelimide 601*
20th Octopus Kouyu FIICN-102 *3 Ito υDure Stone Made PR-5147ON-'=
y-i-+r, -mFl(125'Cl00g!1(t
II>(@TAQ water"".
6:fjL−91ニ1;テ泗l
柘・″ラット11−・・−ノ(厚さ27閤)の11−・
′ルー、・、上t:61角の4fをマウント合成、ト7
バファ−t+kJ l、た成形体111個を 吸湿処理
(65°C,959X譲II、 728情+6)i6、
直ちに寥田浴に10秒浸漬後の成形体に面のクラ999
4個数を示tつ6: fjL-91 ni 1;
'Lou...Top t: Mount composite of 61 corner 4f, t7
Buffer t+kJ l, 111 molded bodies were subjected to moisture absorption treatment (65°C, 959
Immediately after immersing the molded body in the Tabata bath for 10 seconds, the surface of the molded body was coated with 999
4 Show the number
Claims (4)
ール類のプロパルギルエーテル化合物と、▲数式、化学
式、表等があります▼〔 I 〕 (R:H又は−CH_2−C≡CH 但しH/−CH_2−C≡CHが0〜3.0R_1:−
H、−CH_3、−CF_3、▲数式、化学式、表等が
あります▼、又は▲数式、化学式、表等があります▼R
_2:−H、−CH_3、又は−CF_30≦n<30 m、m′はそれぞれのベンゼン環に結合する臭素個数の
平均値であり、0<m<4、0<m′<3であって、し
かも(2m+nm′)/(2+n)=t で表わされる
全体の臭素個数の平均値tは、0<t≦2である。)(
B)下記式〔II〕で示されるポリシロキサンと、▲数式
、化学式、表等があります▼・・・・・・〔II〕 (X:−H又は▲数式、化学式、表等があります▼、 R_3:−CH_3、−CF_3、▲数式、化学式、表
等があります▼、又はXの中からそれぞれ独立に選択さ
れた基 j:1〜100) を反応させてなることを特徴とするシリコーン変性プロ
パルギル樹脂組成物。(1) (A) There are propargyl ether compounds of brominated polyphenols represented by the following formula [I] and ▲mathematical formulas, chemical formulas, tables, etc.▼[I] (R:H or -CH_2-C≡CH where H /-CH_2-C≡CH is 0 to 3.0R_1:-
H, -CH_3, -CF_3, ▲There are mathematical formulas, chemical formulas, tables, etc.▼, or ▲There are mathematical formulas, chemical formulas, tables, etc.▼R
_2: -H, -CH_3, or -CF_30≦n<30 m, m' are the average values of the number of bromines bonded to each benzene ring, and 0<m<4, 0<m'<3, , and the average value t of the total number of bromines expressed as (2m+nm')/(2+n)=t satisfies 0<t≦2. )(
B) Polysiloxane represented by the following formula [II] and ▲There are mathematical formulas, chemical formulas, tables, etc.▼・・・・・・[II] (X: -H or ▲There are mathematical formulas, chemical formulas, tables, etc.▼, R_3: -CH_3, -CF_3, ▲There are mathematical formulas, chemical formulas, tables, etc.▼, or groups j: 1 to 100) each independently selected from Resin composition.
ール類のプロパルギルエーテル化合物と▲数式、化学式
、表等があります▼〔 I 〕 (R:H又は−CH2−C≡CH 但しH/−CH_2−C≡CHが0〜3.0R_1:−
H、−CH_3、−CF_3、▲数式、化学式、表等が
あります▼、又は▲数式、化学式、表等があります▼R
_2:−H、−CH_3、又は−CF_30≦n<30 m、m′はそれぞれのベンゼン環に結合する臭素個数の
平均値であり、0<m<4、0<m′<3であって、し
かも(2m+nm′)/(2+n)=tで表わされる全
体の臭素個数の平均値tは、0<t≦2である。) (B)下記式〔II〕で示されるポリシロキサンと▲数式
、化学式、表等があります▼・・・・・・〔II〕 (X:−H又は▲数式、化学式、表等があります▼ R_3:−CH_3、−CF_3、▲数式、化学式、表
等があります▼、又はXの中からそれぞれ独立に選択さ
れた基 j:1〜100) を反応させてなるシリコーン変性プロパルギル樹脂(A
B)と、 (C)熱硬化性樹脂とを含有又は反応させてなることを
特徴とする半導体封止用樹脂組成物。(2) (A) Propargyl ether compound of brominated polyphenols represented by the following formula [I] ▲ There are mathematical formulas, chemical formulas, tables, etc. ▼ [ I ] (R: H or -CH2-C≡CH where H/ -CH_2-C≡CH is 0 to 3.0R_1:-
H, -CH_3, -CF_3, ▲There are mathematical formulas, chemical formulas, tables, etc.▼, or ▲There are mathematical formulas, chemical formulas, tables, etc.▼R
_2: -H, -CH_3, or -CF_30≦n<30 m, m' are the average values of the number of bromines bonded to each benzene ring, and 0<m<4, 0<m'<3, , and the average value t of the total number of bromines, expressed as (2m+nm')/(2+n)=t, satisfies 0<t≦2. ) (B) Polysiloxane represented by the following formula [II] and ▲ There are mathematical formulas, chemical formulas, tables, etc. ▼・・・・・・[II] (X: -H or ▲ There are mathematical formulas, chemical formulas, tables, etc. ▼ R_3: Silicone-modified propargyl resin (A
A resin composition for semiconductor encapsulation, characterized by containing or reacting B) with (C) a thermosetting resin.
する特許請求の範囲第2項記載の組成物。(3) The composition according to claim 2, wherein the thermosetting resin is an epoxy resin.
とする特許請求の範囲第2項記載の組成物。(4) The composition according to claim 2, wherein the thermosetting resin is a maleimide resin.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26644790A JPH04145128A (en) | 1990-10-05 | 1990-10-05 | Silicon-modified propargyl resin composition and resin composition containing the same for sealing semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26644790A JPH04145128A (en) | 1990-10-05 | 1990-10-05 | Silicon-modified propargyl resin composition and resin composition containing the same for sealing semiconductor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04145128A true JPH04145128A (en) | 1992-05-19 |
Family
ID=17431064
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP26644790A Pending JPH04145128A (en) | 1990-10-05 | 1990-10-05 | Silicon-modified propargyl resin composition and resin composition containing the same for sealing semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04145128A (en) |
-
1990
- 1990-10-05 JP JP26644790A patent/JPH04145128A/en active Pending
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