JPH04148548A - Semiconductor substrate supportor - Google Patents

Abstract

PURPOSE:To suppress deposition of impurities on a semiconductor substrate by coating a face where a semiconductor substrate supportor contacts a semiconductor substrate with a resin film. CONSTITUTION:A numeral 1 represents a semiconductor supportor made of stainless, and a numeral 2 a semiconductor substrate mounted on the semiconductor supportor 1. In general, suction is made in a direction indicated by 3 to hold a semiconductor substrate by the semiconductor supportor. The semiconductor substrate supportor 1 has grooves 4 and chucks a semiconductor substrate 2, where the substrate 2 contacts in a contact face 5 with a trifluorideethylenechloride resin 6 of e.g. 200mum thickness coating the top of the semiconductor substrate supportor 1. The semiconductor substrate uses a 6-inch silicon single crystal substrate, and the radius of the contact face 5 of the semiconductor substrate supportor 1 is 50mm. The semiconductor substrate 2 is mounted and sucked on the semiconductor supportor 1 so that the center of the supportor 1 may coincide with the center of the semiconductor substrate 2. Thereafter, suction is stopped for removal of the semiconductor substrate 2.

Description

[Detailed Description of the Invention] Industrial Field of Application The present invention relates to a semiconductor substrate support device used in manufacturing semiconductor devices.Prior art The conventional semiconductor substrate support device is made of stainless steel, which is easy to process and has high mechanical strength. Even if stainless steel is used, the constituent elements of stainless steel are mainly Fe, Cr, and Ni, and the characteristics of stainless steel are changed depending on the composition ratio of these elements. .

The semiconductor support device 7 is made of stainless steel, and the number 2 is a semiconductor substrate placed on the semiconductor support device 7.Generally, it is used to hold the semiconductor substrate on the semiconductor substrate support device 7! The semiconductor substrate support device 7 is provided with a groove 9, and the semiconductor substrate 2 is sucked in the direction shown by the arrow 8, and the semiconductor substrate 2 is sucked and held. The problem with the semiconductor substrate support device as described above is that direct contact between the semiconductor substrate support device and the semiconductor substrate causes Fe, Cr, and Ni, which are the constituent elements of stainless steel, to adhere to the surface of the semiconductor substrate. Elements have the problem of deteriorating the characteristics of semiconductor devices and lowering yields. Q As semiconductor devices such as DRAM become more highly integrated in the future, the operating margin of semiconductor devices will become smaller.
As the proportion of leakage current due to contamination increases, this problem becomes more and more important.In view of the drawbacks of the conventional semiconductor substrate support device described above, various ideas were devised, and as a result, the present invention was completed. ,
An object of the present invention is to provide a semiconductor substrate support device that supports a semiconductor substrate without contaminating the semiconductor substrate.Means for solving the problems The present invention provides a method for covering the contact surface between the semiconductor substrate support device and the semiconductor substrate with a resin film. As described above, the present invention is effective even in a semiconductor substrate support device that suppresses adhesion of the semiconductor substrate to the semiconductor substrate.By coating the surface in contact with the semiconductor substrate with a resin film, the semiconductor substrate support device can be made of any material. Figure 1 shows an example of this embodiment in which it is possible to prevent impurities that deteriorate the characteristics of the L semiconductor device from adhering to the semiconductor substrate, thereby improving the yield and reliability of the semiconductor device. Cross-sectional view of semiconductor substrate support device 2nd
1 is a plan view of a semiconductor substrate supporting device. FIG. 1 is a sectional view taken along the line xx' in FIG.

1 is a semiconductor support device made of stainless steel; 2 is a semiconductor substrate placed on the semiconductor support device 1; generally, in order to hold the semiconductor substrate on the semiconductor substrate support device, the semiconductor is sucked in the direction shown by arrow 3; To the substrate support device 1 (
A groove 4 is provided to attract and hold the semiconductor substrate 2.
Here, the semiconductor substrate 2 contacts the 200 μm thick trifluorochloroethylene resin 6 coated on the upper surface of the semiconductor substrate support device 1 at the contact surface 5 (the shaded area in FIG. 2). We will also discuss the results of measuring the minority carrier lifetime when a semiconductor substrate is supported by a support device and a conventional semiconductor support device. If the semiconductor substrate is contaminated, the minority carrier lifetime will be reduced.The semiconductor substrate used was a 6-inch silicon single crystal substrate.The radius of the contact surface 5 of the semiconductor substrate support device 1 was 50 mm.
The semiconductor substrate 2 is placed on the semiconductor substrate support device 1 and supported by suction so that the center of the semiconductor substrate support device 1 and the center of the semiconductor substrate 2 match.Then, the suction is stopped and the semiconductor substrate 2 is removed. (The vertical axis in FIG. 3 shows the minority carrier life when the semiconductor substrate 2 is supported by the semiconductor substrate support device 1 of the present invention and the minority carrier life when the semiconductor substrate is supported by the conventional semiconductor substrate support device.) is the minority carrier life. The horizontal axis indicates the position in the diametrical direction passing through the center of the semiconductor substrate.In FIG. In the part where the device 1 and the semiconductor substrate 2 are in contact, no decrease in the minority carrier life is observed, and there is no contamination due to contact (--In the conventional semiconductor substrate support device 7, the minority carrier life force t) The conventional semiconductor substrate support device 7 is made of stainless steel. , Ni
As described above, according to this embodiment, by coating the surface of the semiconductor substrate support device with a resin film, it is possible to suppress the adhesion of impurities. The coating material for the support device should be one that does not contain impurities that would degrade the characteristics of a power semiconductor device using trifluorochloroethylene resin, or one that does not easily come out under normal usage conditions. In particular, it is easy to coat the plate.Other fluorocarbon resinsOther polymer resinsFor example, it is better to use resins such as polyethylene and polypropylene.It goes without saying that they are also useful in semiconductor substrate support devices that do not attract semiconductor substrates. Effects As described above, according to the present invention, it is possible to suppress the adhesion of C'L impurities to the semiconductor substrate, thereby preventing deterioration of the characteristics of the semiconductor device. In addition, the yield of semiconductor devices will improve, and the effects of the invention will be great.

[BRIEF DESCRIPTION OF THE DRAWINGS] FIG. 1 is a cross section of a semiconductor substrate support device according to an embodiment of the present invention. FIG. 2 is a plan view thereof. FIG. 3 is a semiconductor substrate support device of the present invention and a conventional semiconductor substrate support device. Figure 4 is a cross-sectional view of a conventional semiconductor substrate support device. Otori 5, 10...Contact information 6...Resin trap agent's name Patent attorney Akira Okaji and 2 other names. 6 ω φO 15゛O To Hue (L @ (jPL#L) Figure half 1 grade? 8th grade 51

Claims (1)

[Claims] A semiconductor substrate support device characterized in that a surface in contact with a semiconductor substrate is covered with a resin film.