JPH0415255U - - Google Patents

Info

Publication number
JPH0415255U
JPH0415255U JP5682590U JP5682590U JPH0415255U JP H0415255 U JPH0415255 U JP H0415255U JP 5682590 U JP5682590 U JP 5682590U JP 5682590 U JP5682590 U JP 5682590U JP H0415255 U JPH0415255 U JP H0415255U
Authority
JP
Japan
Prior art keywords
semiconductor laser
cladding layers
active region
region
sandwiched
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5682590U
Other languages
Japanese (ja)
Other versions
JP2561802Y2 (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1990056825U priority Critical patent/JP2561802Y2/en
Publication of JPH0415255U publication Critical patent/JPH0415255U/ja
Application granted granted Critical
Publication of JP2561802Y2 publication Critical patent/JP2561802Y2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は本考案装置の一実施例を示す断面図、
第２図は本実施例装置における最高発振出力の分
布図、第３図は比較装置における最高発振出力の
分布図である。 FIG. 1 is a sectional view showing an embodiment of the device of the present invention;
FIG. 2 is a distribution diagram of the maximum oscillation output in the device of this embodiment, and FIG. 3 is a distribution diagram of the maximum oscillation output in the comparison device.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 活性領域が、これより大きなバンドギヤツプを
有する２つのクラツド層に挟まれた半導体レーザ
において、少なくとも上記一方のクラツド層には
、上記活性領域の近傍に、キヤリア濃度の高い領
域が設けられていることを特徴とする半導体レー
ザ。 In a semiconductor laser in which an active region is sandwiched between two cladding layers having a larger band gap, at least one of the cladding layers has a region with a high carrier concentration near the active region. Features of semiconductor laser.
JP1990056825U 1990-05-29 1990-05-29 Semiconductor laser Expired - Lifetime JP2561802Y2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1990056825U JP2561802Y2 (en) 1990-05-29 1990-05-29 Semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1990056825U JP2561802Y2 (en) 1990-05-29 1990-05-29 Semiconductor laser

Publications (2)

Publication Number Publication Date
JPH0415255U true JPH0415255U (en) 1992-02-06
JP2561802Y2 JP2561802Y2 (en) 1998-02-04

Family

ID=31580999

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1990056825U Expired - Lifetime JP2561802Y2 (en) 1990-05-29 1990-05-29 Semiconductor laser

Country Status (1)

Country Link
JP (1) JP2561802Y2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005223316A (en) * 2004-01-09 2005-08-18 Sharp Corp Compound semiconductor device, method of manufacturing compound semiconductor device, optical transmission system, and optical disk device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6223192A (en) * 1985-07-23 1987-01-31 Mitsubishi Electric Corp Semiconductor laser
JPH01140691A (en) * 1987-11-26 1989-06-01 Nec Corp Semiconductor laser
JPH01189188A (en) * 1988-01-25 1989-07-28 Sumitomo Electric Ind Ltd semiconductor laser device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6223192A (en) * 1985-07-23 1987-01-31 Mitsubishi Electric Corp Semiconductor laser
JPH01140691A (en) * 1987-11-26 1989-06-01 Nec Corp Semiconductor laser
JPH01189188A (en) * 1988-01-25 1989-07-28 Sumitomo Electric Ind Ltd semiconductor laser device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005223316A (en) * 2004-01-09 2005-08-18 Sharp Corp Compound semiconductor device, method of manufacturing compound semiconductor device, optical transmission system, and optical disk device

Also Published As

Publication number Publication date
JP2561802Y2 (en) 1998-02-04

Similar Documents

Publication Publication Date Title
JPS6361173U (en)
JPS6315077U (en)
JPS62118470U (en)
JPH038455U (en)
JPS62170663U (en)
JPH0440316U (en)
JPS6186962U (en)
JPS6210462U (en)
JPH02140606U (en)
JPS62158854U (en)
JPH0313760U (en)
JPH01108964U (en)
JPH0390872U (en)
JPH0351858U (en)
JPH0158944U (en)
JPH01153887U (en)
JPH0431813U (en)
JPS63118718U (en)
JPS601465U (en) power sprayer
JPS62154671U (en)
JPH0410343U (en)
JPH03116051U (en)
JPH02102755U (en)
JPH03110858U (en)
JPH0453225U (en)

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term