JPS6186962U - - Google Patents
Info
- Publication number
- JPS6186962U JPS6186962U JP17177684U JP17177684U JPS6186962U JP S6186962 U JPS6186962 U JP S6186962U JP 17177684 U JP17177684 U JP 17177684U JP 17177684 U JP17177684 U JP 17177684U JP S6186962 U JPS6186962 U JP S6186962U
- Authority
- JP
- Japan
- Prior art keywords
- layer
- substrate
- cladding layer
- semiconductor laser
- inp
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005253 cladding Methods 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 4
- 238000010521 absorption reaction Methods 0.000 claims 1
- 230000000903 blocking effect Effects 0.000 description 1
Description
第１図はこの考案の半導体レーザの一実施例を
示す略線的断面図、第２図Ａ及びＢは従来の半導
体レーザを説明するための略線的断面図である。
１…ＩｎＰ基板、２…ＩｎＰ層、３…ＩｎＰブ
ロツキ層、４…ＩｎＰ層、５…Ｖ溝、６…下側Ｉ
ｎＰクラツド層、７…GaInAsP活性層、８…上側
ＩｎＰクラツド層、９…ｐ側電極、１０…ｎ側電
極、１１…GaInAsPクラツド兼歪吸収層（又は上
側クラツド層）。
FIG. 1 is a schematic sectional view showing an embodiment of the semiconductor laser of this invention, and FIGS. 2A and 2B are schematic sectional views illustrating a conventional semiconductor laser. 1... InP substrate, 2... InP layer, 3... InP blocking layer, 4... InP layer, 5... V groove, 6... lower side I
nP cladding layer, 7... GaInAsP active layer, 8... upper InP cladding layer, 9... p-side electrode, 10... n-side electrode, 11... GaInAsP cladding/strain absorbing layer (or upper cladding layer).
Claims (1)
ツド層を具える半導体レーザにおいて、前記基板
をＩｎＰ基板とし、前記下側クラツド層をＩｎＰ
クラツド層とし、前記上側クラツド層を前記活性
層よりもバンドギヤツプの大きいGaInAsPで形成
したクラツド兼歪吸収層として成ることを特徴と
する半導体レーザ。 In a semiconductor laser comprising a lower cladding layer, an active layer, and an upper cladding layer on a substrate, the substrate is an InP substrate, and the lower cladding layer is an InP substrate.
1. A semiconductor laser characterized in that the upper cladding layer is made of GaInAsP having a larger band gap than the active layer and serves as a cladding and strain absorption layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17177684U JPS6186962U (en) | 1984-11-13 | 1984-11-13 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17177684U JPS6186962U (en) | 1984-11-13 | 1984-11-13 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6186962U true JPS6186962U (en) | 1986-06-07 |
Family
ID=30729455
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17177684U Pending JPS6186962U (en) | 1984-11-13 | 1984-11-13 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6186962U (en) |
-
1984
- 1984-11-13 JP JP17177684U patent/JPS6186962U/ja active Pending
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