JPH04159794A - Manufacture of copper through hole printed wiring board - Google Patents
Manufacture of copper through hole printed wiring boardInfo
- Publication number
- JPH04159794A JPH04159794A JP28666290A JP28666290A JPH04159794A JP H04159794 A JPH04159794 A JP H04159794A JP 28666290 A JP28666290 A JP 28666290A JP 28666290 A JP28666290 A JP 28666290A JP H04159794 A JPH04159794 A JP H04159794A
- Authority
- JP
- Japan
- Prior art keywords
- copper
- alkylthio
- laminated plate
- clad laminate
- benzimidazole
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 55
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 53
- 239000010949 copper Substances 0.000 title claims abstract description 53
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 17
- -1 bezimidazole compound Chemical class 0.000 claims abstract description 47
- 238000005530 etching Methods 0.000 claims abstract description 29
- 239000007864 aqueous solution Substances 0.000 claims abstract description 19
- 238000010438 heat treatment Methods 0.000 claims abstract description 10
- 238000000034 method Methods 0.000 claims description 45
- 239000000126 substance Substances 0.000 claims description 27
- 239000000243 solution Substances 0.000 claims description 20
- 239000000203 mixture Substances 0.000 claims description 16
- 238000001035 drying Methods 0.000 claims description 7
- 125000000217 alkyl group Chemical group 0.000 claims description 6
- 125000004414 alkyl thio group Chemical group 0.000 claims description 5
- 125000004432 carbon atom Chemical group C* 0.000 claims description 3
- 125000005843 halogen group Chemical group 0.000 claims description 3
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 claims 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 abstract description 11
- 239000007788 liquid Substances 0.000 abstract description 9
- 230000002950 deficient Effects 0.000 abstract description 4
- 238000012545 processing Methods 0.000 abstract description 3
- 238000006243 chemical reaction Methods 0.000 description 15
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 13
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 10
- 238000007739 conversion coating Methods 0.000 description 9
- HYZJCKYKOHLVJF-UHFFFAOYSA-N 1H-benzimidazole Chemical compound C1=CC=C2NC=NC2=C1 HYZJCKYKOHLVJF-UHFFFAOYSA-N 0.000 description 8
- 238000007747 plating Methods 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 6
- 238000011049 filling Methods 0.000 description 6
- 150000003839 salts Chemical class 0.000 description 5
- LDZYRENCLPUXAX-UHFFFAOYSA-N 2-methyl-1h-benzimidazole Chemical compound C1=CC=C2NC(C)=NC2=C1 LDZYRENCLPUXAX-UHFFFAOYSA-N 0.000 description 4
- 239000002253 acid Substances 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- QGJOPFRUJISHPQ-UHFFFAOYSA-N Carbon disulfide Chemical compound S=C=S QGJOPFRUJISHPQ-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 230000002378 acidificating effect Effects 0.000 description 3
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005755 formation reaction Methods 0.000 description 3
- 150000007524 organic acids Chemical class 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 2
- ROSDSFDQCJNGOL-UHFFFAOYSA-N Dimethylamine Chemical compound CNC ROSDSFDQCJNGOL-UHFFFAOYSA-N 0.000 description 2
- QUSNBJAOOMFDIB-UHFFFAOYSA-N Ethylamine Chemical compound CCN QUSNBJAOOMFDIB-UHFFFAOYSA-N 0.000 description 2
- VZCYOOQTPOCHFL-OWOJBTEDSA-N Fumaric acid Chemical compound OC(=O)\C=C\C(O)=O VZCYOOQTPOCHFL-OWOJBTEDSA-N 0.000 description 2
- AEMRFAOFKBGASW-UHFFFAOYSA-N Glycolic acid Chemical compound OCC(O)=O AEMRFAOFKBGASW-UHFFFAOYSA-N 0.000 description 2
- BAVYZALUXZFZLV-UHFFFAOYSA-N Methylamine Chemical compound NC BAVYZALUXZFZLV-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- WNLRTRBMVRJNCN-UHFFFAOYSA-N adipic acid Chemical compound OC(=O)CCCCC(O)=O WNLRTRBMVRJNCN-UHFFFAOYSA-N 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 229910001431 copper ion Inorganic materials 0.000 description 2
- GHVNFZFCNZKVNT-UHFFFAOYSA-N decanoic acid Chemical compound CCCCCCCCCC(O)=O GHVNFZFCNZKVNT-UHFFFAOYSA-N 0.000 description 2
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 description 2
- 150000002460 imidazoles Chemical class 0.000 description 2
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- 150000007522 mineralic acids Chemical class 0.000 description 2
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- WRIDQFICGBMAFQ-UHFFFAOYSA-N (E)-8-Octadecenoic acid Natural products CCCCCCCCCC=CCCCCCCC(O)=O WRIDQFICGBMAFQ-UHFFFAOYSA-N 0.000 description 1
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- DPLUNLDZRABSMS-UHFFFAOYSA-N 2-butylsulfanyl-1h-benzimidazole Chemical compound C1=CC=C2NC(SCCCC)=NC2=C1 DPLUNLDZRABSMS-UHFFFAOYSA-N 0.000 description 1
- RUPSQLCQKZEDHW-UHFFFAOYSA-N 2-butylsulfanyl-6-methyl-1h-benzimidazole Chemical compound C1=C(C)C=C2NC(SCCCC)=NC2=C1 RUPSQLCQKZEDHW-UHFFFAOYSA-N 0.000 description 1
- WXXMCRNIEVMWKH-UHFFFAOYSA-N 2-heptylsulfanyl-1h-benzimidazole Chemical compound C1=CC=C2NC(SCCCCCCC)=NC2=C1 WXXMCRNIEVMWKH-UHFFFAOYSA-N 0.000 description 1
- LFOFGGGRNCIICE-UHFFFAOYSA-N 2-hexylsulfanyl-1h-benzimidazole Chemical compound C1=CC=C2NC(SCCCCCC)=NC2=C1 LFOFGGGRNCIICE-UHFFFAOYSA-N 0.000 description 1
- RAVJUQGUGBNILR-UHFFFAOYSA-N 2-nonylsulfanyl-1h-benzimidazole Chemical compound C1=CC=C2NC(SCCCCCCCCC)=NC2=C1 RAVJUQGUGBNILR-UHFFFAOYSA-N 0.000 description 1
- SAKANVUQFKREHB-UHFFFAOYSA-N 2-octylsulfanyl-1h-benzimidazole Chemical compound C1=CC=C2NC(SCCCCCCCC)=NC2=C1 SAKANVUQFKREHB-UHFFFAOYSA-N 0.000 description 1
- MIDRAWHTHZNLTB-UHFFFAOYSA-N 2-pentylsulfanyl-1h-benzimidazole Chemical compound C1=CC=C2NC(SCCCCC)=NC2=C1 MIDRAWHTHZNLTB-UHFFFAOYSA-N 0.000 description 1
- BOXWEMKADONAQS-UHFFFAOYSA-N 2-propylsulfanyl-1h-benzimidazole Chemical compound C1=CC=C2NC(SCCC)=NC2=C1 BOXWEMKADONAQS-UHFFFAOYSA-N 0.000 description 1
- LTEDZKNHLNVQEA-UHFFFAOYSA-N 2-undecylsulfanyl-1h-benzimidazole Chemical compound C1=CC=C2NC(SCCCCCCCCCCC)=NC2=C1 LTEDZKNHLNVQEA-UHFFFAOYSA-N 0.000 description 1
- LQJBNNIYVWPHFW-UHFFFAOYSA-N 20:1omega9c fatty acid Natural products CCCCCCCCCCC=CCCCCCCCC(O)=O LQJBNNIYVWPHFW-UHFFFAOYSA-N 0.000 description 1
- AXNUJYHFQHQZBE-UHFFFAOYSA-N 3-methylbenzene-1,2-diamine Chemical compound CC1=CC=CC(N)=C1N AXNUJYHFQHQZBE-UHFFFAOYSA-N 0.000 description 1
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- OTLNPYWUJOZPPA-UHFFFAOYSA-N 4-nitrobenzoic acid Chemical compound OC(=O)C1=CC=C([N+]([O-])=O)C=C1 OTLNPYWUJOZPPA-UHFFFAOYSA-N 0.000 description 1
- AOQKRWWTEDOHRP-UHFFFAOYSA-N 6-chloro-2-octylsulfanyl-1h-benzimidazole Chemical compound ClC1=CC=C2NC(SCCCCCCCC)=NC2=C1 AOQKRWWTEDOHRP-UHFFFAOYSA-N 0.000 description 1
- QSBYPNXLFMSGKH-UHFFFAOYSA-N 9-Heptadecensaeure Natural products CCCCCCCC=CCCCCCCCC(O)=O QSBYPNXLFMSGKH-UHFFFAOYSA-N 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 1
- 239000005632 Capric acid (CAS 334-48-5) Substances 0.000 description 1
- JJLJMEJHUUYSSY-UHFFFAOYSA-L Copper hydroxide Chemical compound [OH-].[OH-].[Cu+2] JJLJMEJHUUYSSY-UHFFFAOYSA-L 0.000 description 1
- 239000005750 Copper hydroxide Substances 0.000 description 1
- 229910021591 Copper(I) chloride Inorganic materials 0.000 description 1
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 239000005642 Oleic acid Substances 0.000 description 1
- ZQPPMHVWECSIRJ-UHFFFAOYSA-N Oleic acid Natural products CCCCCCCCC=CCCCCCCCC(O)=O ZQPPMHVWECSIRJ-UHFFFAOYSA-N 0.000 description 1
- 241000220317 Rosa Species 0.000 description 1
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 description 1
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 1
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 1
- 238000005411 Van der Waals force Methods 0.000 description 1
- RCCULWIHKBFZKF-UHFFFAOYSA-N [Cu].[Cl-].[NH4+].N Chemical class [Cu].[Cl-].[NH4+].N RCCULWIHKBFZKF-UHFFFAOYSA-N 0.000 description 1
- RIRXDDRGHVUXNJ-UHFFFAOYSA-N [Cu].[P] Chemical compound [Cu].[P] RIRXDDRGHVUXNJ-UHFFFAOYSA-N 0.000 description 1
- 239000001361 adipic acid Substances 0.000 description 1
- 235000011037 adipic acid Nutrition 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910001854 alkali hydroxide Inorganic materials 0.000 description 1
- 150000008044 alkali metal hydroxides Chemical class 0.000 description 1
- 150000001350 alkyl halides Chemical class 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000012267 brine Substances 0.000 description 1
- ODWXUNBKCRECNW-UHFFFAOYSA-M bromocopper(1+) Chemical compound Br[Cu+] ODWXUNBKCRECNW-UHFFFAOYSA-M 0.000 description 1
- 239000006172 buffering agent Substances 0.000 description 1
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 description 1
- AXCZMVOFGPJBDE-UHFFFAOYSA-L calcium dihydroxide Chemical compound [OH-].[OH-].[Ca+2] AXCZMVOFGPJBDE-UHFFFAOYSA-L 0.000 description 1
- 239000000920 calcium hydroxide Substances 0.000 description 1
- 229910001861 calcium hydroxide Inorganic materials 0.000 description 1
- 230000009918 complex formation Effects 0.000 description 1
- 150000004699 copper complex Chemical class 0.000 description 1
- 229910001956 copper hydroxide Inorganic materials 0.000 description 1
- 229910000365 copper sulfate Inorganic materials 0.000 description 1
- OXBLHERUFWYNTN-UHFFFAOYSA-M copper(I) chloride Chemical compound [Cu]Cl OXBLHERUFWYNTN-UHFFFAOYSA-M 0.000 description 1
- XTVVROIMIGLXTD-UHFFFAOYSA-N copper(II) nitrate Chemical compound [Cu+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O XTVVROIMIGLXTD-UHFFFAOYSA-N 0.000 description 1
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 1
- OPQARKPSCNTWTJ-UHFFFAOYSA-L copper(ii) acetate Chemical compound [Cu+2].CC([O-])=O.CC([O-])=O OPQARKPSCNTWTJ-UHFFFAOYSA-L 0.000 description 1
- 229960003280 cupric chloride Drugs 0.000 description 1
- 229940045803 cuprous chloride Drugs 0.000 description 1
- 238000005238 degreasing Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010828 elution Methods 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- 239000001530 fumaric acid Substances 0.000 description 1
- 235000011087 fumaric acid Nutrition 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 235000011167 hydrochloric acid Nutrition 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Chemical group 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- QXJSBBXBKPUZAA-UHFFFAOYSA-N isooleic acid Natural products CCCCCCCC=CCCCCCCCCC(O)=O QXJSBBXBKPUZAA-UHFFFAOYSA-N 0.000 description 1
- 239000004310 lactic acid Substances 0.000 description 1
- 235000014655 lactic acid Nutrition 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- ZQPPMHVWECSIRJ-KTKRTIGZSA-N oleic acid Chemical compound CCCCCCCC\C=C/CCCCCCCC(O)=O ZQPPMHVWECSIRJ-KTKRTIGZSA-N 0.000 description 1
- 235000021313 oleic acid Nutrition 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- DYFXGORUJGZJCA-UHFFFAOYSA-N phenylmethanediamine Chemical compound NC(N)C1=CC=CC=C1 DYFXGORUJGZJCA-UHFFFAOYSA-N 0.000 description 1
- 235000011007 phosphoric acid Nutrition 0.000 description 1
- OXNIZHLAWKMVMX-UHFFFAOYSA-N picric acid Chemical compound OC1=C([N+]([O-])=O)C=C([N+]([O-])=O)C=C1[N+]([O-])=O OXNIZHLAWKMVMX-UHFFFAOYSA-N 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 235000019260 propionic acid Nutrition 0.000 description 1
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000001568 sexual effect Effects 0.000 description 1
- HPALAKNZSZLMCH-UHFFFAOYSA-M sodium;chloride;hydrate Chemical compound O.[Na+].[Cl-] HPALAKNZSZLMCH-UHFFFAOYSA-M 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- SFKTYEXKZXBQRQ-UHFFFAOYSA-J thorium(4+);tetrahydroxide Chemical compound [OH-].[OH-].[OH-].[OH-].[Th+4] SFKTYEXKZXBQRQ-UHFFFAOYSA-J 0.000 description 1
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Landscapes
- ing And Chemical Polishing (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
この発明は銅スルーホールプリント配線板の製造方法に
関するものであり、特に短い時間で安価に且つ信頼性の
よい高密度プリント配線板を製造するものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application This invention relates to a method for manufacturing copper through-hole printed wiring boards, particularly for manufacturing high-density printed wiring boards in a short period of time, at low cost, and with good reliability. be.
従来の技術
従来最も広く行われてきた銅スルーホールプリント配線
板の製造方法としては、目詰め方法と呼ばれるものがあ
る。この方法はスルーボール内に目詰め・インクを充填
して孔を保護したのら、エツチングレジストを印刷する
方法であり、工程中で目詰めインクの溶媒が蒸発し、目
詰めインクが収縮を起こすため、エツチング液が孔の中
に入ってスルーボール内の銅メツキを)容かず惧れがあ
り、また収縮によって目詰めインクの厚さが基板の厚さ
よりも薄くなりやすく、基板と孔との角の銅メツキが溶
解して、いわゆるエツジ切れ現象を起こし易いので、信
頼性の高い製品を与えることができなかった。BACKGROUND OF THE INVENTION The most widely used method for manufacturing copper through-hole printed wiring boards in the past is the filling method. In this method, the through ball is filled with packing ink to protect the holes, and then an etching resist is printed.During the process, the solvent of the filling ink evaporates, causing the filling ink to shrink. Therefore, there is a risk that the etching liquid may enter the hole and damage the copper plating inside the through ball.Also, due to shrinkage, the thickness of the filling ink tends to become thinner than the thickness of the board, which may cause the contact between the board and the hole. Since the copper plating on the corners easily melts and causes a so-called edge breakage phenomenon, it has not been possible to provide a highly reliable product.
また信頼性の高い製品を得る方法として電解半田メツキ
法(半田スルーボール法)が知られているが、この方法
は目詰め法に比べて信頼性の高い製品を与えることがで
きる反面、製造に多くの時間がかかり、且つコス1へが
高くなるなどの欠点があった。Furthermore, the electrolytic solder plating method (solder through ball method) is known as a method for obtaining highly reliable products, but while this method can provide more reliable products than the plugging method, it is difficult to manufacture. There were disadvantages such as it took a lot of time and cost 1 was high.
特公昭50 27033号及び同51−18896号公
報には、銅張積層板の表面に2位に長鎖アルキル基を有
するイミダゾール化合物またはその塩を含む溶液を直接
シルクスクリーン印刷し、自然乾燥して陽画のエツチン
グレジスト膜を形成し、酸性エツチング液に浸漬して不
要な銅部分を除去するプリント配線板の製造方法が開示
されているが、銅表面に形成したイミダゾール化合物か
らなるエツチングレジスト膜が塩基性物質であるため、
酸性エツチング液と接触した際にその一部が溶出し、回
路として保護すべき部分がエツチングされて多くの不良
品を伴うものであり、銅スルーホールプリント配線板を
製造する場合には、別途に銅メンキされた小さいスルー
ホール内の表面にイミダゾール化合物またはその塩を含
む溶液をコーティングする煩わしい作業を余儀なくされ
、工業的には実施し難いものであった。Japanese Patent Publication No. 50 27033 and 51-18896 discloses that a solution containing an imidazole compound or a salt thereof having a long-chain alkyl group at the 2-position is directly printed on the surface of a copper-clad laminate by silk screen printing, and then air-dried. A method for manufacturing a printed wiring board is disclosed in which a positive etching resist film is formed and unnecessary copper parts are removed by immersing it in an acidic etching solution. Because it is a sexual substance,
When it comes into contact with an acidic etching solution, a part of it is eluted, etching parts that should be protected as circuits, resulting in many defective products.When manufacturing copper through-hole printed wiring boards, a separate process is required. This method requires the troublesome work of coating the surface of a small copper-plated through hole with a solution containing an imidazole compound or its salt, which is difficult to implement industrially.
このような諸問題を解決した銅スルーホールプリント配
線板の製造法として特公昭64’−1954号公報には
、アルキルイミダゾール化合物の塩を含む水溶液を陰画
パターンを形成した銅張積層板の表面に接触さゼて、銅
張積層板の銅表面にアルキル=6−
イミダゾール化合物からなるエツチングレジスI・膜を
形成し、次いで前記銅張積層板を加熱乾燥したのち、陰
画パターンを除去し、アルカリ性エツチング液に接触さ
せる方法が開示されている。As a manufacturing method for copper through-hole printed wiring boards that solves these problems, Japanese Patent Publication No. Sho 64'-1954 discloses that an aqueous solution containing a salt of an alkylimidazole compound is applied to the surface of a copper-clad laminate on which a negative pattern has been formed. An etching resist I/film made of an alkyl-6-imidazole compound is formed on the copper surface of the copper-clad laminate by contacting it, and then the copper-clad laminate is heated and dried, the negative pattern is removed, and alkaline etching is performed. A method of contacting a liquid is disclosed.
しかしながら、ごの方法によってピン間3本以上の高密
度パターンの銅スルーホールプリン1〜配線板を製造す
る場合には、アルキルイミダゾール化合物の膜の塩水性
が充分なものでないため、アルキルイミダゾール化合物
の化成被膜を形成したのち加熱乾燥する際に、膜が形成
された銅表面に水滴が付着して残りやすく、このため乾
燥初期に化成被膜が溶解し、部分的にエツチングレジス
ト膜の薄い箇所が発生ずるので、時として断線あるいは
回路の凹み等を引き起こす場合があった。However, when manufacturing copper through-hole prints 1 to wiring boards with a high-density pattern of three or more pins by this method, the alkylimidazole compound film does not have sufficient brine properties. When drying by heating after forming a chemical conversion film, water droplets tend to adhere to and remain on the copper surface on which the film has been formed, and as a result, the chemical conversion film dissolves in the early stage of drying, resulting in thinner etching resist films in some areas. This sometimes causes wire breaks or dents in the circuit.
またドライフィルム(以下、DFRとい・う)を用いて
陰画パターンを形成した場合、銅表面にアルキルイミダ
ゾール化合物の膜を形成したのぢ陰画パターンを除去す
る際、DFRの剥離残りが発生しやすく、剥離時間を延
長する必要があった。In addition, when a negative pattern is formed using a dry film (hereinafter referred to as DFR), when removing the negative pattern, which has a film of an alkylimidazole compound formed on the copper surface, it is likely that the DFR will remain peeled off. It was necessary to extend the peeling time.
高密度パターンの銅スルーホールプリント配線仮の製造
においては、0 、3 mmφ以下のハイヤホール用の
スルーボール等の小径孔内に化成被膜の剥離残りが起こ
りやすく、剥離処理時間の延長、剥離処理液の液温アッ
プ、剥離処理液の高濃度化等を行う必要があった。In the temporary production of copper through-hole printed wiring in high-density patterns, it is easy for chemical conversion coatings to remain peeled off in small diameter holes such as through balls for hire holes with a diameter of 0.3 mm or less, resulting in an extension of the peeling time and a problem with the peeling process. It was necessary to increase the temperature of the solution and increase the concentration of the stripping solution.
発明が解決しようとする課題
最近プリント配線板の高密度化が進展するにつれ、従来
の目詰め法、半田メツキ法では信頼性あるいはコストの
点で問題があり、また前記のアルキルイミダゾール化合
物を用いる方法は安価な製造コス1−で、低・中密度の
パターンの場合は信頼−性の高いプリント配線板が得ら
れるが、高密度のパターンの場合は未だ充分な信頼性が
得られるものでない。Problems to be Solved by the Invention Recently, as the density of printed wiring boards has progressed, conventional filling methods and solder plating methods have problems in terms of reliability and cost, and the method using the above-mentioned alkylimidazole compound The method has a low manufacturing cost and can provide a highly reliable printed wiring board in the case of a pattern of low or medium density, but it is not yet possible to obtain sufficient reliability in the case of a pattern of high density.
このように高密度のプリント配線板を製造するために、
現在行われている目詰め法、半田メ・フキ法等の方法と
同等あるいはそれ以上の高い信頼性が維持でき、処理時
間も短く、且つ製造コストが安価である方法の開発が望
まれている。In order to manufacture such high-density printed wiring boards,
It is desired to develop a method that can maintain high reliability equivalent to or better than the currently used methods such as filling method, solder paste method, etc., has a short processing time, and has a low manufacturing cost. .
課題を解決するだめの手段
本発明者等はこのような事情に鑑み鋭意研究を重ねた結
果、高密度の銅スルーホールプリンI・配線板を製造す
るためには、アルカリ水溶液に可溶のレジストを用いて
銅張積層板の表面に必要な陰画パターンを形成し、つい
で前記銅張積層板を2−アルキルチオ)ベンズイミダゾ
ール化合物を含む水溶液に接触させて、銅張積層板の銅
表面に前記2−アルキルチオ)ベンズイミダゾール化合
物からなるエソヂングレジスI・膜を形成し、前記銅張
積層板を加熱乾燥し、銅張積層板表面の陰画パターン膜
を除去したのぢ、アルカリ性エツヂング液に接触させ、
次いでエツチングレジスト膜を剥離することにより所期
の目的が達成されることを見出し、本発明を完遂した。Means to Solve the Problem The inventors of the present invention have conducted intensive research in view of the above circumstances, and have found that in order to manufacture high-density copper through-hole print I/wiring boards, a resist soluble in an alkaline aqueous solution is required. is used to form a necessary negative pattern on the surface of the copper-clad laminate, and then the copper-clad laminate is brought into contact with an aqueous solution containing a 2-alkylthio)benzimidazole compound to form the necessary negative pattern on the copper surface of the copper-clad laminate. - forming an etching resist I film made of an alkylthio)benzimidazole compound, heating and drying the copper clad laminate to remove the negative pattern film on the surface of the copper clad laminate, and then contacting it with an alkaline etching solution;
It was discovered that the intended purpose could be achieved by peeling off the etching resist film, and the present invention was completed.
本発明方法の実施において用いられる代表的な2− (
アルキルチオ)−、ンズイミダゾール化合物としては、
で表される2−(プロピルチオ)ベンズイミダゾール、
2−(ブチルチオ)ベンズイミダゾール、2−(ペンチ
ルチオ)ベンズイミダゾール、2−(ヘキシルチオ)ベ
ンズイミダゾール、2−(ヘプチルチオ)ベンズイミダ
ゾール、2−(オクチルチオ)ベンズイミダゾール、2
− (ノニルチオ)ベンズイミダゾール、2−(ウンデ
シルチオ)ベンズイミダゾール及び2−(ヘプクデシル
ヂオ)ベンズイミダゾール、
一般式
で表される2−(プロピルチオ)−5−メチルベ=10
−
ンズイミダゾール、2−(プロピルチオ)−4,5−ジ
メチルベンズイミダゾール、2−(ブチルチオ)−5−
クロロベンズイミダゾール、2− (ブチルチオ)−5
−ニトロベンズイミダゾール、2−(ペンチルチオ)−
4−メチルベンズイミダゾール、2−(ペンチルチオ)
−5−メチルベンズイミダゾール、2− (ペンチルチ
オ) −5,6−シクロロペンズイミダゾール、2−(
ヘキシルチオ)−5,6−ジメチルベンズイミダゾール
、2− (ヘキシルチオ)−5−二I・ロベンズイミダ
ゾール、2−(ヘプチルチオ)−4−メチルベンズイミ
ダゾール、2−(ヘプチルチオ)−5−メチルベンズイ
ミダゾール、2−(ヘプチルチオ)−5−クロロベンズ
イミダゾール、2− (オクチルチオ)−5,6−シク
ロロペンズイミダゾール、2− (オクチルチオ)−5
−クロロベンズイミダゾール、2 (ノニルチオ) 4
−メチルベンズイミダゾール、2−(ノニルチオ)−5
−メチルベンズイミダゾール、2−(ノニルチオ)−4
,5−ジメチルベンズイミダゾール、2−(ノニルチオ
)−5−二トロヘンズイミダゾール、l−(ウンデシル
チオ)−4−メチルベンズイミダゾール及び2−(ヘプ
タデシルチオ)−5−メチルベンズイミダゾール並びに
一般式(r)
と
一般式(II)
〔但し、式中R8は前記と同じである。 〕で表さ
れる化合物の混合物である2−(プロピルチオ)−4−
メチルベンズイミダゾールと2−(プロピルチオ)−5
−メチルベンズイミダゾールの混合物、2−(ブチルチ
オ)−4−メチルベンズイミダゾールと2− (ブチル
チオ)−5−メチルベンズイミダゾールの混合物、2−
(ペンチルチオ)−4−メチルベンズイミダゾールと2
− (ペンチルチオ)−5−メチルベンズイミダゾール
の混合物、2−(へ;Fシルチオ)−4−メチルベンズ
イミダゾールと2−(ヘキシルチオ)−5−メチルベン
ズイミダゾールの混合物、2−(ヘプチルチオ)−4−
メチルベンズイミダゾールと2−(ヘプチルチオ)−5
−メチルベンズイミダゾールの混合物、2−(オクチル
チオ)−4−メチル−、ンズイミダヅールと2−(オク
チルチオ)−5−メチルベンズイミダゾールの混合物、
2− (ノニルチオ)−4−メチルベンズイミダゾール
と2−(ノニルチオ)−5−メチルベンズイミダゾール
の混合物、2−(ウンデシルチオ)−4−メチルベンズ
イミダゾールと2− (ウンデシルチオ)−5−メチル
ベンズイミダゾールの混合物及び2 (ヘプタデシルチ
オ)−4−メチルベンズイミダゾールと2−(ヘプタデ
シルチオ)−5−ノチルベンズイミダゾールの混合物な
どである。Typical 2-(
As the alkylthio)-, nizimidazole compounds, 2-(propylthio)benzimidazole represented by
2-(Butylthio)benzimidazole, 2-(pentylthio)benzimidazole, 2-(hexylthio)benzimidazole, 2-(heptylthio)benzimidazole, 2-(octylthio)benzimidazole, 2
- (nonylthio)benzimidazole, 2-(undecylthio)benzimidazole and 2-(hepcudecyldio)benzimidazole, 2-(propylthio)-5-methylbe represented by the general formula = 10
- zuimidazole, 2-(propylthio)-4,5-dimethylbenzimidazole, 2-(butylthio)-5-
Chlorobenzimidazole, 2-(butylthio)-5
-Nitrobenzimidazole, 2-(pentylthio)-
4-methylbenzimidazole, 2-(pentylthio)
-5-methylbenzimidazole, 2-(pentylthio) -5,6-cyclopenzimidazole, 2-(
hexylthio)-5,6-dimethylbenzimidazole, 2-(hexylthio)-5-diI-lovenzimidazole, 2-(heptylthio)-4-methylbenzimidazole, 2-(heptylthio)-5-methylbenzimidazole, 2-(heptylthio)-5-chlorobenzimidazole, 2-(octylthio)-5,6-cyclopenzimidazole, 2-(octylthio)-5
-chlorobenzimidazole, 2 (nonylthio) 4
-Methylbenzimidazole, 2-(nonylthio)-5
-Methylbenzimidazole, 2-(nonylthio)-4
, 5-dimethylbenzimidazole, 2-(nonylthio)-5-nitrohenzimidazole, l-(undecylthio)-4-methylbenzimidazole and 2-(heptadecylthio)-5-methylbenzimidazole and general formula (r) and General formula (II) [However, in the formula, R8 is the same as above. 2-(propylthio)-4-, which is a mixture of compounds represented by
Methylbenzimidazole and 2-(propylthio)-5
- a mixture of methylbenzimidazole, a mixture of 2-(butylthio)-4-methylbenzimidazole and 2-(butylthio)-5-methylbenzimidazole, 2-
(pentylthio)-4-methylbenzimidazole and 2
- a mixture of (pentylthio)-5-methylbenzimidazole, a mixture of 2-(h;
Methylbenzimidazole and 2-(heptylthio)-5
- a mixture of methylbenzimidazole, 2-(octylthio)-4-methyl-, a mixture of nizimidazole and 2-(octylthio)-5-methylbenzimidazole,
A mixture of 2-(nonylthio)-4-methylbenzimidazole and 2-(nonylthio)-5-methylbenzimidazole, a mixture of 2-(undecylthio)-4-methylbenzimidazole and 2-(undecylthio)-5-methylbenzimidazole and a mixture of 2(heptadecylthio)-4-methylbenzimidazole and 2-(heptadecylthio)-5-notylbenzimidazole.
本発明方法で用いる2−アルキルチオ)ベンズイミダゾ
ール化合物は公知の方法で合成することができる。即ち
、2−メルカプ1へベンズイミダゾール化合物とハロゲ
ン化アルキルを、アルコールやN、N−ジメチルホルム
アミド等の有機溶媒中にて、水酸化カリウムや水酸化カ
ルシウム等の脱ハロゲン化水素剤の存在下、反応させる
ことによって得ることができ、その反応式は下記のとお
りである。The 2-alkylthio)benzimidazole compound used in the method of the present invention can be synthesized by a known method. That is, a benzimidazole compound and an alkyl halide are added to 2-mercap 1 in an organic solvent such as alcohol or N,N-dimethylformamide in the presence of a dehydrohalogenating agent such as potassium hydroxide or calcium hydroxide. It can be obtained by reacting, and the reaction formula is as follows.
(式中Xはハロゲン原子を表わす)
なお、2−アルキルチオ)ベンズイミダゾール化合物の
原料となる2−メルカプI・ベンズイミダゾール化合物
は、いくつかの方法で製造するごとができる。(In the formula, X represents a halogen atom) The 2-mercap I benzimidazole compound, which is a raw material for the 2-alkylthio)benzimidazole compound, can be produced by several methods.
例えば、0−フェニレンジアミン類と二硫化炭=14−
素を水酸化アルカリの存在下にて反応させることによっ
て得ることができ、その反応式は下記のとおりである。For example, it can be obtained by reacting 0-phenylene diamines and carbon disulfide in the presence of alkali hydroxide, and the reaction formula is as follows.
I
この際、2−メルカプトヘンズイミダゾール化合物の合
成を目的として、2.3−ジアミノトルエン及び3,4
−ジアミノトルエンの’II 金物環ヲ使用すれば、4
−メチル−2−メルカブトヘンズイミダゾール化合物と
5−メチル−2−メルカブトベンズイミダヅール化合物
の混合物が得られ、この混合物をそのまま分けることな
くアルキル化するごとにより、4−メヂルー2−アルキ
ルチオ)ベンズイミダゾール化合物と5−メチル−2−
アルキルチオ)ベンズイミダゾール化合物の混合物を得
ることができる。I At this time, for the purpose of synthesizing a 2-mercaptohenzimidazole compound, 2,3-diaminotoluene and 3,4
-If we use 'II metal ring of diaminotoluene, 4
A mixture of a methyl-2-mercabutohenzimidazole compound and a 5-methyl-2-merkabutobenzimidazole compound is obtained, and this mixture is alkylated without being separated to form 4-medyyl-2-alkylthio. ) Benzimidazole compound and 5-methyl-2-
Mixtures of alkylthio)benzimidazole compounds can be obtained.
本発明の実施において、炭素数が小さいアルキル基を有
する2−アルキルチオ)ペンズイミダゾールを用いた場
合、銅金属の表面に形成された化成被膜の一部が膜形後
の水洗により溶出する傾向があり、また炭素数が大きい
アルキル基を持つ2−アルキルチオ)ヘンズイミダゾー
ルを使用すると、処理液を形成するのに大量の有機酸が
必要になるため、2位のアルキルチオ基としては炭素数
3ないし9のものが、特に好適である。When a 2-alkylthio)penzimidazole having an alkyl group with a small number of carbon atoms is used in the practice of the present invention, a part of the chemical conversion film formed on the surface of the copper metal tends to be eluted by washing with water after forming the film. In addition, if a 2-alkylthio)henzimidazole having an alkyl group with a large number of carbon atoms is used, a large amount of organic acid is required to form a treatment solution. are particularly suitable.
本発明方法の実施に当たっては、水に対して2−アルキ
ルチオ)ベンズイミダゾール化合物を0.01〜5%の
範囲、好ましくは0.1〜2%の割合で添加すればよい
。In carrying out the method of the present invention, the 2-alkylthio)benzimidazole compound may be added in a proportion of 0.01 to 5%, preferably 0.1 to 2%, based on water.
本発明方法の実施においては、2−アルキルチオ)ベン
ズイミダゾール化合物は水に対して難溶性であるため、
2−アルキルチオ)ベンズイミダゾール化合物を有機ま
たは無機酸と反応させて、水に可溶の塩にすればよい。In carrying out the method of the present invention, since the 2-alkylthio)benzimidazole compound is poorly soluble in water,
A 2-alkylthio)benzimidazole compound may be reacted with an organic or inorganic acid to form a water-soluble salt.
本発明方法の実施において用いられる有機あるいは無機
酸としては、蟻酸、酢酸、カプリン酸、プロピオン酸、
グリコール酸、アクリル酸、パラニトロ安息香酸、バラ
1〜ルエンスルポン酸、ピクリン酸、シリチル酸、蓚酸
、コハク酸、−7レイン酸、フマール酸、酒石酸、アジ
ピン酸、塩酸、燐酸、乳酸、オレイン酸、フタル酸等で
あり、水に対して0.01〜40%の範囲、好ましくは
0.2〜20%の割合で添加すればよい。Organic or inorganic acids used in carrying out the method of the invention include formic acid, acetic acid, capric acid, propionic acid,
Glycolic acid, acrylic acid, paranitrobenzoic acid, rose 1 to luene sulfonic acid, picric acid, silicylic acid, oxalic acid, succinic acid, -7leic acid, fumaric acid, tartaric acid, adipic acid, hydrochloric acid, phosphoric acid, lactic acid, oleic acid, phthalic acid It is an acid, etc., and may be added in a range of 0.01 to 40%, preferably 0.2 to 20%, based on water.
また本発明方法の実施において、2−アルキルチオ)ベ
ンズイミダゾール化合物に銅イオンを添加することによ
り、銅表面の化成被膜の膜形成を促進することができ、
その際用いられる銅イオンを生じる物質の代表的なもの
としては、銅粉、塩化第一銅、塩化第二銅、水酸化銅、
リン政調、酢酸銅、硫酸銅、硝酸銅、臭化銅等である。Furthermore, in carrying out the method of the present invention, by adding copper ions to the 2-alkylthio)benzimidazole compound, it is possible to promote the formation of a chemical conversion film on the copper surface,
Typical substances that generate copper ions used in this case include copper powder, cuprous chloride, cupric chloride, copper hydroxide,
These include copper phosphorus, copper acetate, copper sulfate, copper nitrate, and copper bromide.
この場合、アンモニアあるいはアミン類等の緩衝作用を
有する物質を添加して、溶液のpHを安定にするのが望
ましく、その際用いられるアミン類としては、メチルア
ミン、ジメチルアミン、エチルアミン、モノエタノール
アミン、ジェタノールアミン、トリエタノールアミン等
である。In this case, it is desirable to stabilize the pH of the solution by adding a buffering substance such as ammonia or amines, and the amines used in this case include methylamine, dimethylamine, ethylamine, monoethanolamine , jetanolamine, triethanolamine, etc.
本発明方法における銅張積層板の銅表面に2=(アルキ
ルチオ)ベンズイミダゾール化合物の化成被膜を形成す
る処理の態様について述べる。An aspect of the treatment for forming a chemical conversion film of a 2=(alkylthio)benzimidazole compound on the copper surface of a copper-clad laminate in the method of the present invention will be described.
銅の表面を研磨、脱脂、酸洗浄等によって仕上げ、引き
続き2−アルキルチオ)ヘンズイ゛ミダゾール化合物を
0.1〜5%、好ましくは0.1〜2%含む水溶液に数
秒ないし数分の間浸漬する。この時の処理液の液温は0
〜100°C1好ましくは30〜50℃である。The surface of the copper is finished by polishing, degreasing, acid washing, etc., and then immersed in an aqueous solution containing 0.1 to 5%, preferably 0.1 to 2%, of a 2-alkylthio)henzimidazole compound for several seconds to several minutes. . At this time, the temperature of the processing liquid is 0.
-100°C, preferably 30-50°C.
2−アルキルチオ)ベンズイミダゾール化合物の銅表面
に対する付着量は、液温か高いほどあるいは処理時間が
長くなるほど増加する。The amount of the 2-alkylthio)benzimidazole compound attached to the copper surface increases as the liquid temperature increases or as the treatment time increases.
本発明方法の実施においては、通常2−アルキルチオ)
ベンズイミダゾール化合物を含む水溶液中に、銅張積層
板を浸漬する方法が採られるが、特にこれに限定される
ものではなく、任意の接触方法、たとえば処理液を銅張
積層板に沿って流下させるなどの方法も可能である。In carrying out the method of the invention, usually 2-alkylthio)
A method is adopted in which the copper-clad laminate is immersed in an aqueous solution containing a benzimidazole compound, but the method is not particularly limited to this, and any contact method may be used, such as flowing a treatment liquid along the copper-clad laminate. Other methods are also possible.
また銅張積層板の銅表面と処理液を十分に接触させるた
めに、処理液中で銅張積層板を振動させたり、あるいは
処理液に攪拌を与えることが好ましく、また超音゛波を
作用させて処理液に振動を与=18−
えることも、銅表面に気泡が付着するのを阻止するため
に有効である。In addition, in order to bring the copper surface of the copper clad laminate into sufficient contact with the treatment solution, it is preferable to vibrate the copper clad laminate in the treatment solution or to stir the treatment solution, and also to apply ultrasonic waves. It is also effective to apply vibrations to the treatment solution by causing the copper surface to be exposed to air bubbles.
本発明方法の実施においては、銅張積層板を2−アルキ
ルチオ)ベンズイミダゾール化合物を含む水溶液に接触
させて銅表面に化成被膜を形成し、水洗して取り出たの
ぢ前記の無色透明の化成被膜が褐色に変わるまで強制的
に加熱乾燥させるべきであり、この場合の加熱条件は通
常80〜150°Cの温度範囲で数分ないし数十分間加
熱することが望ましく、80°C以下の温度では加熱に
長時間を要し、また150℃を超える場合は、短時間で
均一に加熱する装置を必要とする。In carrying out the method of the present invention, a copper-clad laminate is brought into contact with an aqueous solution containing a 2-alkylthio)benzimidazole compound to form a chemical conversion film on the copper surface, which is washed with water and taken out. The coating should be forcibly dried by heating until it turns brown. In this case, the heating conditions are usually 80 to 150°C, preferably several minutes to several tens of minutes, and 80°C or lower. It takes a long time to heat the material, and if the temperature exceeds 150.degree. C., a device that heats the material uniformly in a short period of time is required.
本発明方法の実施において、銅張積層板表面の陰画パタ
ーンを除去するには、水酸化すトリウム、水酸化カリウ
ム等の強塩基性物質を含む水溶液に接触する方法が簡便
であり、またアルカリ性エツチング液としては、アンモ
ニウム複塩が一般的であり、特にアンモニア−塩化アン
モニウム−銅系のものが好適である。また銅表面の2−
(アルキルチオ)ヘンズイミダゾールの化成被膜は、
ア−19=
ルカリ水溶液に溶けないので、アルカリ性エンヂンダ液
を用いるごとにより、容易に不要部分の銅をエツチング
することができる。In carrying out the method of the present invention, in order to remove the negative pattern on the surface of a copper-clad laminate, it is convenient to contact it with an aqueous solution containing a strong basic substance such as thorium hydroxide or potassium hydroxide, or alkaline etching. As the liquid, ammonium double salts are generally used, and ammonia-ammonium chloride-copper salts are particularly suitable. Also, 2-
The conversion coating of (alkylthio)henzimidazole is
A-19= Since it is not soluble in an aqueous alkali solution, unnecessary parts of the copper can be easily etched by using an alkaline endender solution.
作用
銅に2−アルキルチオ)ベンズイミダゾール化合物を含
む水溶液を接触させると、2− (アルキルチオ)ベン
ズイミダゾール化合物と銅との錯体形成反応及び2−ア
ルキルチオ)ベンズイミダゾール間の水素結合とファン
デルワールス力の両作用により膜が成長し、最終的には
2−アルキルチオ)ベンズイミダゾール−銅錯体と共役
したヘンゼン環を含む安定した化成被膜が銅表面上に形
成される。Effect When copper is brought into contact with an aqueous solution containing a 2-(alkylthio)benzimidazole compound, a complex formation reaction between the 2-(alkylthio)benzimidazole compound and copper, hydrogen bonding between the 2-alkylthio)benzimidazole, and van der Waals forces occur. Both actions result in film growth and ultimately a stable conversion film containing a Hensen ring conjugated to a 2-alkylthio)benzimidazole-copper complex is formed on the copper surface.
従って、銅張積層板を2−アルキルチオ)ベンズイミダ
ゾール化合物を含む水溶液に浸漬すると、陰画パターン
が形成されていない回路部分及びスルーポール内の銅表
面に2−アルキルチオ)ベンズイミダゾールの化成被膜
を容易に形成することができる。Therefore, when a copper-clad laminate is immersed in an aqueous solution containing a 2-alkylthio)benzimidazole compound, a chemical conversion coating of 2-alkylthio)benzimidazole can be easily formed on the copper surface of the through-pole and the circuit portion where the negative pattern is not formed. can be formed.
さらに銅表面の2−アルキルチオ)ベンズイミダゾール
の化成被膜は加熱乾燥させると、2−アルキルチオ)−
、ンズイミダゾール・銅錯体にある種の重合反応が起こ
り、エツチングの際に優れたレジスト作用を有する硬い
化成被膜を佳し、エツチング剤程における不良率が著し
く低下される。Furthermore, when the chemical conversion coating of 2-alkylthio)benzimidazole on the copper surface is heated and dried, the 2-alkylthio)-
A certain polymerization reaction occurs in the nizimidazole/copper complex, resulting in a hard chemical conversion film with excellent resisting properties during etching, and the defective rate of the etching agent is significantly reduced.
銅表面の2− (アルキルチオ)ベンズイミダゾールの
化成被膜は、緻密で均一な被膜が形成されるので水に対
する撥水性が良好であり、被膜形成ののち部分的な溶出
が発生しにくく、均一な膜厚を持つ化成被膜が得られ、
エツチング処理をしたのち銅回路の凹みあるいは断線が
起こりにくい。The chemical conversion film of 2-(alkylthio)benzimidazole on the copper surface forms a dense and uniform film, so it has good water repellency, and after film formation, partial elution is unlikely to occur, resulting in a uniform film. A thick chemical conversion coating is obtained,
Copper circuits are less likely to be dented or disconnected after etching.
また化成被膜か加熱乾燥による変質を受けにくいので、
エツチング後の化成被膜の剥離も酸性水溶液を用いるこ
とにより容易に行える。In addition, the chemical conversion coating is resistant to deterioration due to heat drying, so
The chemical conversion film after etching can also be easily peeled off using an acidic aqueous solution.
陰画パターンを形成するために用いるDFRに対しては
、2− (アルキルチオ)ベンズイミダゾールは塩基性
が低いので吸着しにくく、DFRの剥離性が低下しない
ものと考えられる。Since 2-(alkylthio)benzimidazole has low basicity, it is difficult to adsorb to DFR used to form a negative pattern, and it is considered that the releasability of DFR does not deteriorate.
実施例1〜11
1 、6 mm厚のガラスエポキシ両面銅張積層板〔F
R−4、商品名: R4705(松下電工■製)〕に小
孔をあけ、無電解銅メツキをし次いで電解銅メ・7キを
して、孔の内部及び両面に20〜30μの銅メツキを形
成した。Examples 1 to 11 1, 6 mm thick glass epoxy double-sided copper clad laminate [F
R-4, product name: R4705 (manufactured by Matsushita Electric Works)], a small hole is drilled, electroless copper plating is applied, and then electrolytic copper plating is applied 7 times to coat the inside of the hole and both sides with a 20-30μ copper plating. was formed.
次にアルカリ可溶のレジストインク〔商品名二KM−1
0(太陽インキ製造■製)〕を用いスクリーン印刷によ
り、厚さ20μ程度の陰画パターン塗膜を形成し、80
’Cの温度で10分間乾燥した。Next, alkali-soluble resist ink [product name 2KM-1]
0 (manufactured by Taiyo Ink Manufacturing Co., Ltd.)] by screen printing to form a negative pattern coating film with a thickness of about 20 μm.
It was dried for 10 minutes at a temperature of 'C.
さらに前記基板を5%塩酸水溶液に浸漬後水洗し、銅表
面を清浄した後、表1に示すとおりの組成からなる処理
液を同表に示す処理条件で処理したとごろ、銅張積層板
の同表面上に付着した2−アルキルチオ)ベンズイミダ
ゾールの化成被膜の厚みは表1に示すとおりであった。Further, the substrate was immersed in a 5% hydrochloric acid aqueous solution and washed with water to clean the copper surface, and then treated with a treatment solution having the composition shown in Table 1 under the treatment conditions shown in the table. The thickness of the 2-alkylthio)benzimidazole chemical conversion coating deposited on the same surface was as shown in Table 1.
前記基板と同様の処理を行って得られた銅張積層板のレ
ジストインクを3%水酸化す1−リウム水溶液を用いて
除去し、120°Cの温度で10分間加熱乾燥させた。The resist ink on the copper-clad laminate obtained by performing the same treatment as the substrate was removed using a 3% aqueous solution of 1-lium hydroxide, and the resulting board was dried by heating at a temperature of 120° C. for 10 minutes.
次いでアルカリ性エツチング剤〔アンモニア−塩化アン
モニウム−銅系、比重1.1〜1.2、商品名二A グ
し!セス(メルテノクス製)〕を用い、50°Cの温度
で前記化成被膜を形成した基板に人々スプレーしてエン
チングを行い、その後3.5%塩酸水溶液に浸漬して回
路上のエノヂングレジスト膜を溶解除去し、銅スルーポ
ールプリンl−配線板を製造した。Next, an alkaline etching agent [ammonia-ammonium chloride-copper system, specific gravity 1.1-1.2, trade name 2A Gushi! The etching process was carried out by spraying the chemical conversion film on the substrate at a temperature of 50°C using a 3.5% aqueous solution of hydrochloric acid to remove the etching resist film on the circuit. By dissolving and removing it, a copper through-pole wiring board was manufactured.
いずれの基板も銅回路の断線及び凹み等の発生がないも
のであった。None of the substrates had any disconnections or dents in the copper circuits.
なお、2−(アルギルチオ)−・ンズイミダゾールの化
成被膜の厚みは、所定の大きさの試験片を0.5%塩酸
水溶液に浸漬し、溶解したイミダゾール類の濃度を紫外
線分光光度計を用いて測定し、化成被膜の厚みに換算し
たものである。The thickness of the chemical conversion coating of 2-(argylthio)--nzimidazole can be determined by immersing a test piece of a specified size in a 0.5% aqueous hydrochloric acid solution and measuring the concentration of the dissolved imidazoles using an ultraviolet spectrophotometer. It is measured and converted into the thickness of the chemical conversion film.
−24一
実施例12〜17及び比較例
実施例1で用いたのと同様の電解銅メツキを施した銅張
積層板に、水溶性のDFR[商品名:Sε5405、(
三菱レイコン味製)〕を用いて、高密度の陰画パターン
を形成した。-24 - Examples 12 to 17 and Comparative Examples A copper-clad laminate plated with electrolytic copper similar to that used in Example 1 was coated with water-soluble DFR [trade name: Sε5405, (
(manufactured by Mitsubishi Raycon Aji)] to form a high-density negative pattern.
さらに前記基板を5%塩酸水溶液に浸漬後水洗し、銅表
面を清浄した後、表2に示すとおりの組成からなる処理
液を同表に示す処理条件で処理したところ、銅表面の水
洗後の撥水性(目視)、DFR−、のイミダゾール類の
吸着度(銅面上のイミダゾール量を100とした場合の
DFR上のイミダゾール量)、DFRの剥離時間(12
0°Cの温度で10分間加熱乾燥後、3%Naoh水溶
液を液温50°Cでスプレーし、完全に剥離するまでに
要する時間)及び化成被膜の剥離時間(120°Cの温
度で10分間加熱乾燥後、3.5%11C1水溶液を液
温50’Cでスプレーし、0.3mrrlφの小径孔内
の化成被膜が完全に剥離するまでに要する時間)は表2
に示すとおりの結果であった。Further, the substrate was immersed in a 5% hydrochloric acid aqueous solution and washed with water to clean the copper surface. After the copper surface was treated with a treatment solution having the composition shown in Table 2 under the treatment conditions shown in the same table, the results were as follows: Water repellency (visual observation), adsorption degree of imidazoles in DFR- (the amount of imidazole on DFR when the amount of imidazole on the copper surface is taken as 100), peeling time of DFR (12
After heating and drying at a temperature of 0°C for 10 minutes, spray a 3% NaOH aqueous solution at a temperature of 50°C to determine the time required to completely remove the coating and the peeling time of the chemical conversion film (10 minutes at a temperature of 120°C). After heating and drying, a 3.5% 11C1 aqueous solution was sprayed at a liquid temperature of 50'C, and the time required for the chemical conversion coating in the small diameter hole of 0.3 mrrlφ to be completely peeled off) is shown in Table 2.
The results were as shown in .
前記基板と同様の処理を行って得られた銅張積層板を夫
々120°Cの温度で約10分間加熱乾燥し、次いで実
施例1て用いたのと同様のアルカリ性エンチング剤を用
いてエツチング処理を行い、その後3.5%塩酸水溶液
に浸漬して回路上のエンチンブレジス1−膜を溶解除去
し、高密度の銅スルーポールプリント配線板を製造した
。Copper-clad laminates obtained by the same treatment as the above substrate were each heated and dried at a temperature of 120°C for about 10 minutes, and then etched using the same alkaline etching agent as used in Example 1. Thereafter, the substrate was immersed in a 3.5% aqueous hydrochloric acid solution to dissolve and remove the Entin Breath 1 film on the circuit, producing a high-density copper through-pole printed wiring board.
2− (アルギルチオ)ベンズイミダゾールを用いた基
板はいずれも断線及び銅回路の凹の等の発生がなかった
が、比較例のアルキル・イミダゾールを用いた基板は、
一部銅回路に凹みが発生した。2- None of the boards using (argylthio)benzimidazole caused any disconnections or depressions in the copper circuit, but the board using alkyl imidazole in the comparative example
A dent occurred in some of the copper circuits.
発明の効果
本発明方法によれば、安価なコストで、且つ不良率の発
生が極め′ζ低く併願性に富む高密度の銅スルーボール
プリント配線板を製造することが可能であり、実践面に
おける効果は顕著である。Effects of the Invention According to the method of the present invention, it is possible to manufacture high-density copper through-ball printed wiring boards that are inexpensive, have an extremely low defective rate, and are highly compatible with multiple applications. The effect is remarkable.
Claims (4)
層板の表面に必要な陰画パターンを形成し、ついで前記
銅張積層板を2位に炭素数3以上のアルキル基を有する
2−(アルキルチオ)ベンズイミダゾール化合物を含む
水溶液に接触させて、銅張積層板の銅表面に前記2−(
アルキルチオ)ベンズイミダゾール化合物からなるエッ
チングレジスト膜を形成し、前記銅張積層板を加熱乾燥
し、銅張積層板表面の陰画パターン膜を除去したのち、
アルカリ性エッチング液に接触させ、次いでエッチング
レジスト膜を剥離することを特徴とする銅スルーホール
プリント配線板の製造方法。(1) A necessary negative pattern is formed on the surface of a copper-clad laminate using a resist soluble in an alkaline aqueous solution, and then the copper-clad laminate is coated with a 2-( The above 2-(
After forming an etching resist film made of an alkylthio)benzimidazole compound, heating and drying the copper-clad laminate, and removing the negative pattern film on the surface of the copper-clad laminate,
A method for manufacturing a copper through-hole printed wiring board, which comprises contacting with an alkaline etching solution and then peeling off an etching resist film.
ズイミダゾール化合物を用いる請求項(1)記載の方法
。 一般式 ▲数式、化学式、表等があります▼ (但し、式中R_1は炭素数3以上のアルキル基を表す(2) The method according to claim (1), wherein a 2-(alkylthio)benzimidazole compound represented by the following general formula is used. General formula ▲ There are mathematical formulas, chemical formulas, tables, etc. ▼ (However, in the formula, R_1 represents an alkyl group with 3 or more carbon atoms.
ズイミダゾール化合物を用いる請求項(1)記載の方法
。 一般式 ▲数式、化学式、表等があります▼ (但し、式中R_1は前記と同じであり、R_2、R_
3及びR_4は低級アルキル基、ハロゲン原子、ニトロ
基又は水素原子を表わし、且つこれらのうち少なくとも
その一つが低級アルキル基、ハロゲン原子又はニトロ基
のいずれかである。(3) The method according to claim (1), which uses a 2-(alkylthio)benzimidazole compound represented by the following general formula. General formula▲There are mathematical formulas, chemical formulas, tables, etc.▼ (However, in the formula, R_1 is the same as above, R_2, R_
3 and R_4 represent a lower alkyl group, a halogen atom, a nitro group, or a hydrogen atom, and at least one of them is a lower alkyl group, a halogen atom, or a nitro group.
ルキルチオ)ベンズイミダゾール化合物の混合物を用い
る請求項(1)記載の方法 一般式( I ) ▲数式、化学式、表等があります▼ 〔但し、式中R_1は前記と同じである。〕一般式(I
I) ▲数式、化学式、表等があります▼ 〔但し、式中R_1は前記と同じである。〕(4) The method according to claim (1) using a mixture of 2-alkylthio)benzimidazole compounds represented by the following general formulas (I) and (II) General formula (I) ▲There are mathematical formulas, chemical formulas, tables, etc.▼ [However, R_1 in the formula is the same as above. ] General formula (I
I) ▲There are mathematical formulas, chemical formulas, tables, etc.▼ [However, R_1 in the formula is the same as above. ]
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28666290A JPH04159794A (en) | 1990-10-23 | 1990-10-23 | Manufacture of copper through hole printed wiring board |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28666290A JPH04159794A (en) | 1990-10-23 | 1990-10-23 | Manufacture of copper through hole printed wiring board |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04159794A true JPH04159794A (en) | 1992-06-02 |
Family
ID=17707331
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP28666290A Pending JPH04159794A (en) | 1990-10-23 | 1990-10-23 | Manufacture of copper through hole printed wiring board |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04159794A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010287834A (en) * | 2009-06-15 | 2010-12-24 | Sumitomo Electric Ind Ltd | Electrode connection method, electrode connection structure, conductive adhesive and electronic device used therefor |
| US8470438B2 (en) | 2009-06-15 | 2013-06-25 | Sumitomo Electric Industries, Ltd. | Electrode-connecting structure, conductive adhesive used for the same, and electronic apparatus |
| JP2024075182A (en) * | 2022-11-22 | 2024-06-03 | メック株式会社 | Etching solution set, etching method, and method for forming conductive pattern |
-
1990
- 1990-10-23 JP JP28666290A patent/JPH04159794A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010287834A (en) * | 2009-06-15 | 2010-12-24 | Sumitomo Electric Ind Ltd | Electrode connection method, electrode connection structure, conductive adhesive and electronic device used therefor |
| US8470438B2 (en) | 2009-06-15 | 2013-06-25 | Sumitomo Electric Industries, Ltd. | Electrode-connecting structure, conductive adhesive used for the same, and electronic apparatus |
| US9226406B2 (en) | 2009-06-15 | 2015-12-29 | Sumitomo Electric Industries, Ltd. | Electrode connection method, electrode connection structure, conductive adhesive used therefor, and electronic device |
| JP2024075182A (en) * | 2022-11-22 | 2024-06-03 | メック株式会社 | Etching solution set, etching method, and method for forming conductive pattern |
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