JPH04171448A - Photomask - Google Patents

Abstract

PURPOSE:To correspond easily to such a case as to require trace search on which position in which wafer a semiconductor element is formed at the time of some trouble being generated to this semiconductor element by providing a characteristic information pattern for each semiconductor element at one part of each mask pattern. CONSTITUTION:A characteristic information pattern 4 formed of figures (0, 0) indicating the position of a mask pattern 1 positioned at the left top part of a glass substrate from the top view is formed at one part of this mask pattern 1. On the basis of this mask pattern 1, a characteristic information pattern 4 formed of figures (1, 0) is formed at a mask pattern 1 in a position shifted to the right by one, a characteristic information pattern 4 formed of figures (0, 1) is formed at a mask pattern 1 in a position shifted downward by one, and a characteristic information pattern formed of figures (1, 1) is formed at a mask pattern 1 in a position shifted downward to the right one by one. Trace search can be thereby performed easily on the basis of the information entered in a semiconductor element so as to enable the early discovery of trouble and the execution of sufficient counter-measure to the trouble.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a photomask used in a photolithography process, on which mask patterns are formed for each of a plurality of semiconductor elements formed on a semiconductor wafer.

[Conventional technology]

FIG. 2 is a partially enlarged plan view of a conventional photomask.

A typical photomask is constructed by forming mask patterns for each of a plurality of semiconductor elements to be formed on a semiconductor wafer on a glass substrate.

That is, as shown in FIG. 2, a mask pattern for each semiconductor element is formed on a glass substrate, and the product model name of the semiconductor element is indicated in the end region of each mask pattern 1 adjacent to the electronic circuit pattern 2. For example, characters such as “A203”,
A model name information pattern 3 consisting of numbers is formed.

By the way, the types of photomasks necessary for manufacturing each semiconductor element on a '16 conductor wafer are prepared, and each mask pattern in one photomask has the same shape.

Then, such a photomask is used in a photolithography process to form a plurality of semiconductor elements on a semiconductor wafer, and each of these semiconductor elements is given a product model name according to the above-mentioned photomask model name information pattern 3. Representing letters and numbers are written, and then each semiconductor element is separated at the scribe line by a scribing process.

[Problem to be solved by the invention]

In the conventional case, the photomask has characters indicating the product type name,
Only the type name information pattern 3 consisting of numbers is formed, and only the same letters and numbers are written on each semiconductor element, so if each semiconductor element is separated, the product will be different from the characters written on each semiconductor element. Even if you know the model name, it is difficult to know where on the semiconductor wafer each semiconductor element was formed. There was a problem in that it was not easy to conduct follow-up surveys to identify the location of the vehicle, and it was not possible to detect defects early or to take sufficient measures to prevent the defects.

This invention was made in order to solve the above-mentioned problems. After each semiconductor element is separated, if a defect occurs in the semiconductor element and the semiconductor element is formed at a different position on the wafer. The purpose is to make it easier to deal with the need for follow-up investigations such as Nanoga.

[Means to solve the problem]

In the photomask according to the second invention, a mask pattern for each of a plurality of semiconductor elements formed on a 1' conductor wafer is formed, and in a photomask used in a photolithography process, a part of each of the mask patterns is formed. It is characterized by having a unique information pattern for each of the semiconductor elements.

[Effect]

In this invention, since a part of the mask pattern of each semiconductor element has a unique information pattern of each element, a part of each mask pattern has a unique information pattern such as information representing the position of each semiconductor element on a semiconductor wafer. By providing 218 images using the photomask,
Each conductor element has unique information written on it, and after each semiconductor element is separated, even if a malfunction occurs in the conductor element and it is necessary to trace the cause of the malfunction, etc., Tracking can be easily carried out based on the unique information written on the semiconductor device.

〔Example〕

FIG. 1 is an enlarged plan view of a portion of an embodiment of a photomask according to the present invention.

In this figure, the difference from FIG. 2 is that a part of the mask pattern 1 of each Y conductor element formed on the glass substrate is
Adjacent to the type name information pattern 3, a unique information pattern 4 for each I type conductor element is formed.

By the way, when forming a pattern consisting of numbers representing the position of each semiconductor element on a conductor wafer using the unique information pattern 4, the mask pattern located at the upper left corner of the glass substrate in plan view is used. 1, a unique information pattern 4 consisting of numbers (0, 0) indicating its position is formed, and a mask pattern 1 at a position shifted by one position to the right with respect to this mask pattern 1 has (1, 0) as a reference.
, O), the mask pattern 1 located one position below has a unique information pattern 4 consisting of the numbers (0, i).
, and a unique information pattern 4 consisting of numbers (1, 1) is formed in the mask pattern 1 at positions shifted by one to the right and to the bottom.

Therefore, the unique information pattern 4 consisting of the numbers (N, M) is formed in the pattern 1 at a position shifted N spaces to the right and M spaces to the right from the upper left mask pattern 1.

In this way, by forming the unique information pattern 4 consisting of numbers representing the position of each semiconductor element on the semiconductor wafer in a part of each mask pattern 1 of the photomask, the semiconductor wafer can be printed using this photomask. Each ゛I' on top
When a conductor element is formed, unique information indicating the position of each semiconductor element is written on each semiconductor element, so if a problem occurs in the semiconductor element after each semiconductor element is separated, it becomes necessary to conduct a follow-up investigation to find the cause of the failure. Even in the event of a failure, it is possible to easily conduct a follow-up investigation based on the numbers written on each semiconductor element using the unique information pattern 4 of the photomask, and this will ensure early detection of defects and implementation of countermeasures against defects. becomes possible.

Note that the unique information pattern 4 is not limited to the above-mentioned numbers representing the position on the semiconductor wafer, but may also include symbols representing the semiconductor wafer itself, and other unique information necessary for follow-up surveys. Needless to say, it is okay.

Further, the unique information pattern 4 is (0
, 0), etc., but may also be a figure, a bar code, etc.

Furthermore, in the above embodiment, the case where the unique information pattern 4 is formed at the end of the mask pattern 1 of each semiconductor element is illustrated (FIG. 1) and explained. Good too.

〔Effect of the invention〕

As described above, according to the photomask of the present invention, a part of the mask pattern for each semiconductor element formed on a semiconductor wafer has a unique information pattern for each element. When semiconductor devices are formed, unique information is written on each semiconductor device. Therefore, even if a defect occurs in the semiconductor device after it is separated, the information written on the semiconductor device will be used. This makes it possible to easily conduct a follow-up investigation, detect defects at an early stage, and take adequate countermeasures against defects, which is extremely effective in improving the reliability of semiconductor devices.

[Brief explanation of drawings]

FIG. 1 is a partially enlarged plan view of an embodiment of the photomask of the present invention, and FIG. 2 is a partially enlarged plan view of a conventional photomask. In the figure, 1 is a mask pattern and 4 is a unique information pattern. Note that the same reference numerals in each figure indicate the same or corresponding parts.

Claims (1)

[Claims] (1) In a photomask used in a photolithography process in which mask patterns for each of a plurality of semiconductor elements formed on a semiconductor wafer are formed, a part of each mask pattern contains unique information of each of the semiconductor elements. A photomask characterized by having a pattern.