JPH0418669U - - Google Patents
Info
- Publication number
- JPH0418669U JPH0418669U JP5769790U JP5769790U JPH0418669U JP H0418669 U JPH0418669 U JP H0418669U JP 5769790 U JP5769790 U JP 5769790U JP 5769790 U JP5769790 U JP 5769790U JP H0418669 U JPH0418669 U JP H0418669U
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- particle sensor
- heating chamber
- sensor section
- particle
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002245 particle Substances 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims description 5
- 239000007789 gas Substances 0.000 claims description 4
- 238000001816 cooling Methods 0.000 claims description 3
- 239000011261 inert gas Substances 0.000 claims description 2
- 238000001514 detection method Methods 0.000 claims 1
- 239000000376 reactant Substances 0.000 claims 1
- 238000001947 vapour-phase growth Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Description
第１図は本考案装置の一実施例の構成を示す簡
略断面図、第２図は本考案におけるパーテイクル
センサ部の概略図、第３図は従来装置の一例の構
成を示す簡略断面図である。
１……加熱室、２ａ，２ｂ……加熱形平行平板
電極、３……基板ホルダ、３ａ……基板、４……
冷却（水冷）熱遮蔽板、５……シヤツタ、６……
パーテイクルセンサ部、７……コネクタ、８……
リード線、９……ガス導入管、１０……排気装置
（ポンプ）、１０ａ……排気部、Ｇ……不活性ガ
ス（Ｎ２ガス）。
FIG. 1 is a simplified sectional view showing the configuration of an embodiment of the device of the present invention, FIG. 2 is a schematic diagram of the particle sensor section of the present invention, and FIG. 3 is a simplified sectional view showing the configuration of an example of the conventional device. be. DESCRIPTION OF SYMBOLS 1... Heating chamber, 2a, 2b... Heating type parallel plate electrode, 3... Substrate holder, 3a... Substrate, 4...
Cooling (water cooling) heat shielding plate, 5... Shutter, 6...
Particle sensor section, 7... Connector, 8...
Lead wire, 9...Gas introduction pipe, 10...Exhaust device (pump), 10a...Exhaust section, G...Inert gas ( N2 gas).
Claims (1)
る基板３ａを保持する基板ホルダ３を設置し、こ
の基板ホルダ３の両側に対向して加熱形平行平板
電極２ａ，２ｂを配置せしめ、この電極２ａ，２
ｂ間のプラズマ放電によつて反応ガス種を基板３
ａ上に膜堆積するプラズマ気相成長装置において
、加熱室１の排気口に冷却熱遮蔽板４を設け、加
熱室１の排気部１０ａ内に投光部と受光部よりな
る増幅器付きパーテイクルセンサ部６を設置せし
め、このパーテイクルセンサ部６内に不活性ガス
Ｇを導入するガス導入管９を設けると共に当該パ
ーテイクルセンサ部６にこれを開閉するシヤツタ
５を具備せしめてなるパーテイクル検出装置。 A substrate holder 3 that holds a substrate 3a to be heated to a predetermined temperature in a low vacuum is installed in a heating chamber 1, and heated parallel plate electrodes 2a and 2b are arranged opposite to each other on both sides of this substrate holder 3. , this electrode 2a, 2
Reactant gas species are transferred to the substrate 3 by plasma discharge between b
In a plasma vapor phase growth apparatus that deposits a film on a substrate, a cooling heat shielding plate 4 is provided at the exhaust port of the heating chamber 1, and a particle sensor with an amplifier consisting of a light emitting part and a light receiving part is installed in the exhaust part 10a of the heating chamber 1. The particle detection device comprises a particle sensor section 6, a gas introduction pipe 9 for introducing an inert gas G into the particle sensor section 6, and a shutter 5 for opening and closing the particle sensor section 6.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5769790U JPH0418669U (en) | 1990-05-30 | 1990-05-30 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5769790U JPH0418669U (en) | 1990-05-30 | 1990-05-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0418669U true JPH0418669U (en) | 1992-02-17 |
Family
ID=31582644
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5769790U Pending JPH0418669U (en) | 1990-05-30 | 1990-05-30 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0418669U (en) |
-
1990
- 1990-05-30 JP JP5769790U patent/JPH0418669U/ja active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4430547A (en) | Cleaning device for a plasma etching system | |
| JPH0418669U (en) | ||
| JPS57134555A (en) | Method and device for forming thin film | |
| JP2697250B2 (en) | Thermal CVD equipment | |
| JPH0560256B2 (en) | ||
| JPH0533524U (en) | Heater for single-wafer CVD equipment | |
| JPS61159572A (en) | Continuous sputtering apparatus | |
| JPH0532902B2 (en) | ||
| JPS61289623A (en) | Vapor-phase reaction device | |
| JPH0248422Y2 (en) | ||
| JPH0532991Y2 (en) | ||
| JP3415272B2 (en) | Processing equipment | |
| JPH0746562B2 (en) | Display tube manufacturing equipment | |
| JPH03128668U (en) | ||
| JPH0526734Y2 (en) | ||
| JPH0343231Y2 (en) | ||
| JPH01232725A (en) | Dry-etching device | |
| JPH0397222A (en) | Single wafer CVD equipment | |
| JPS6346837U (en) | ||
| JPS61189622A (en) | Molecular beam epitaxy equipment | |
| JPH01205066A (en) | Vacuum film forming device | |
| JPS61104080A (en) | Electrode structure of plasma CVD equipment | |
| JPS6158532A (en) | Baking equipment | |
| KR19980059776A (en) | Metal thin film deposition apparatus of semiconductor | |
| JPH01107542A (en) | plasma processing equipment |