JPH04187581A - Method for producing large-area oxide superconducting thin films - Google Patents
Method for producing large-area oxide superconducting thin filmsInfo
- Publication number
- JPH04187581A JPH04187581A JP2313191A JP31319190A JPH04187581A JP H04187581 A JPH04187581 A JP H04187581A JP 2313191 A JP2313191 A JP 2313191A JP 31319190 A JP31319190 A JP 31319190A JP H04187581 A JPH04187581 A JP H04187581A
- Authority
- JP
- Japan
- Prior art keywords
- film
- substrate
- oxide superconducting
- superconducting thin
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims description 24
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 239000000758 substrate Substances 0.000 claims description 29
- 239000010408 film Substances 0.000 claims description 17
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 16
- 238000000608 laser ablation Methods 0.000 claims description 16
- 239000001301 oxygen Substances 0.000 claims description 16
- 229910052760 oxygen Inorganic materials 0.000 claims description 16
- 230000002093 peripheral effect Effects 0.000 claims description 2
- 238000000034 method Methods 0.000 description 12
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000013078 crystal Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment
Landscapes
- Oxygen, Ozone, And Oxides In General (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、大面積の酸化物超電導薄膜の作製方法に関す
る。より詳細にはレーザアブレーション法を用いて大面
積の酸化物超電導薄膜を作製する方法に関する。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a method for producing large area oxide superconducting thin films. More specifically, the present invention relates to a method for producing a large-area oxide superconducting thin film using a laser ablation method.
従来の技術
薄膜の作製には、各種の方法が使用されるが、レーザア
ブレーション法は、組成の制御がやり易く、成膜速度が
速い等の利点がある。また、−切の電磁場を必要としな
いので、高品質の薄膜を作製するのに適した方法と考え
られている。BACKGROUND OF THE INVENTION Various methods are used to produce thin films, but the laser ablation method has advantages such as easy control of composition and fast film formation rate. Furthermore, because it does not require a negative electromagnetic field, it is considered to be a suitable method for producing high-quality thin films.
従来、レーザアブレーション法で薄膜を作製する場合は
、内部を高真空に排気可能で、任意の雰囲気ガスを導入
できる成膜室内に基板およびターゲットを配置し、成膜
室外部に配置したレーザ装置の発するレーザ光を光学手
段により誘導し、ターゲットに照射していた。Conventionally, when producing a thin film using the laser ablation method, the substrate and target are placed inside a deposition chamber that can be evacuated to a high vacuum and any atmospheric gas can be introduced, and the laser equipment is placed outside the deposition chamber. The emitted laser light was guided by optical means and irradiated onto the target.
発明が解決しようとする課題
しかしながら、レーザ光の照射面積は、装置の制約上有
限の大きさであり、成膜可能な薄膜の大きさもそれによ
って制限されていた。Problems to be Solved by the Invention However, the area irradiated with laser light is limited in size due to equipment limitations, and the size of the thin film that can be formed is also limited thereby.
すなわち、レーザアブレーション法で薄膜を作製する場
合には、レーザ光をターゲットに照射した時に発生する
ロウツク様の形状をしたプルームと呼ばれるプラズマ状
態の先端部で成膜を行う。That is, when producing a thin film using the laser ablation method, the film is formed at the tip of a plasma state called a wax-like plume that is generated when a target is irradiated with laser light.
これは、プルームの先端には、酸化された活性な成膜粒
子が多く存在するため、この部分で成膜を行うと特性の
良好な薄膜が得られるためである。This is because there are many oxidized and active film-forming particles at the tip of the plume, and a thin film with good properties can be obtained by forming a film at this part.
ところが、プルームの先端は、非常に微小であるため、
従来、レーザアブレーション法で作製された薄膜は、膜
厚の分布が大きくかつ膜質の分布も顕著であった。However, since the tip of the plume is extremely small,
Conventionally, thin films produced by laser ablation have a wide distribution of film thickness and a remarkable distribution of film quality.
そこで本発明の目的は、レーザアブレーション法の短所
である小面積不均一成膜の問題を解決し、レーザアブレ
ーション法で、大面積且つ膜厚および膜質分布の少ない
酸化物超電導薄膜を作製する方法を提供することにある
。Therefore, the purpose of the present invention is to solve the problem of non-uniform film formation in a small area, which is a disadvantage of the laser ablation method, and to develop a method for producing an oxide superconducting thin film with a large area and a small distribution of film thickness and film quality using the laser ablation method. It is about providing.
課題を解決するための手段
本発明に従うと、ターゲットにレーザ光を照射して、前
記ターゲットに対向して配置した基板上に薄膜を成長さ
せるレーザアブレーション法により大面積の酸化物超電
導薄膜を作製する方法において、前記基板成膜面の中心
部の酸素分圧を高く、周辺部の酸素分圧を低くして成膜
を行うことを特徴とする大面積の酸化物超電導薄膜の作
製方法が提供される。Means for Solving the Problems According to the present invention, a large-area oxide superconducting thin film is produced by a laser ablation method in which a target is irradiated with laser light and a thin film is grown on a substrate placed opposite the target. There is provided a method for producing a large-area oxide superconducting thin film, characterized in that the film is formed with a high oxygen partial pressure at the center of the substrate film-forming surface and a low oxygen partial pressure at the periphery. Ru.
作用
本発明の方法は、レーザアブレーション法で、基板成膜
面上の酸素分圧に中心部が高く、周辺部が低い分布を与
えて成膜を行うところにその主要な特徴がある。レーザ
アブレーション法では、ターゲットのレーザ光が照射さ
れた位置の上側にプルームといわれる活性な成膜粒子の
集まりであるプラズマが発生し、その先端付近で最も効
率よい反応が起こる。通常は、プルームの先端が接する
位置に基板の中心部を配置するが、その場合、基板のプ
ルームの先端に接している部分の近傍の微小な範囲にの
み薄膜が形成される。本発明の方法では、基板成膜面上
の中心部の酸素分圧を高く、周辺部の酸素分圧を低くし
て、プルームの先端からから離れている部分でも、中心
部と同様ｊ−薄膜が成長するようにする。Operation The main feature of the method of the present invention is that film formation is performed using a laser ablation method in which the oxygen partial pressure on the film-forming surface of the substrate is distributed such that it is high in the center and low in the periphery. In the laser ablation method, a plasma, which is a collection of active film-forming particles called a plume, is generated above the position of the target irradiated with laser light, and the most efficient reaction occurs near the tip of the plume. Normally, the center of the substrate is placed at a position where the tip of the plume contacts, but in that case, a thin film is formed only in a small area near the portion of the substrate that is in contact with the tip of the plume. In the method of the present invention, the oxygen partial pressure at the center of the substrate film-forming surface is high and the oxygen partial pressure at the periphery is low, so that even in the part away from the tip of the plume, the j-thin film is the same as in the central part. to grow.
本発明の方法では、基板成膜面上の酸素分圧は、例えば
、第２図のグラフに示すよう中心部が０．８Ｔｏｒｒ、
中心部から１０ ＋ｎ＋ｎ離れているところで０．５Ｔ
ｏｒｒ。In the method of the present invention, the oxygen partial pressure on the substrate film-forming surface is, for example, 0.8 Torr at the center as shown in the graph of FIG.
0.5T at a distance of 10+n+n from the center
orr.
さらに中心部からの距離が２０＋ｎ＋ｎの位置でＱ、
２Ｔａｒｒというような分布を与えられていることが好
ましい。Furthermore, at a position where the distance from the center is 20 + n + n, Q,
It is preferable that a distribution such as 2 Tarr is given.
基板成膜面上に上記のような酸素分圧を付与するために
は、例えば、基板成膜面が内側に入る大きさの環状のノ
ズルにより酸素を供給し、このノズルの噴出口は基板中
央に向かう方向に加工されていることが好ましい。In order to apply the above-mentioned oxygen partial pressure onto the substrate film-forming surface, for example, oxygen is supplied through an annular nozzle large enough to allow the substrate film-forming surface to enter inside, and the jet nozzle of this nozzle is located at the center of the substrate. It is preferable that the process be performed in a direction toward .
以下、本発明を実施例によりさらに詳しく説明するが、
以下の開示は本発明の単なる実施例に過ぎず、本発明の
技術的範囲を何ら制限するものではない。Hereinafter, the present invention will be explained in more detail with reference to Examples.
The following disclosure is merely an example of the present invention and does not limit the technical scope of the present invention in any way.
実施例
第１図に本発明の方法を実施するレーザアブレーション
装置の一例を示す。第１図のレーザアブレーション装置
では、レーザ装置１０で発生され、集光レンズ９を通っ
たレーザ光はチャンバ１のレーザ入射窓７に入射し、チ
ャンバ１内のターンテーブルＩＩに搭載されている原料
ターゲット５を照射する。ターンテーブル１１はモータ
１４により、任意の回転速度で回転させることが可能で
ある。Embodiment FIG. 1 shows an example of a laser ablation apparatus for carrying out the method of the present invention. In the laser ablation apparatus shown in FIG. 1, a laser beam generated by a laser device 10 and passed through a condensing lens 9 is incident on a laser incidence window 7 of a chamber 1, and the raw material mounted on a turntable II in the chamber 1 is Irradiate target 5. The turntable 11 can be rotated by a motor 14 at any rotational speed.
チャンバ１の内部は高真空に排気可能で、基板ホルダ３
に基板２がターゲット５に対向するように固定されてい
る。基板ホルダ３内には、基板２を加熱するヒータ４が
備えられている。また、基板２の近傍には、基板２の周
囲を囲むような環状の形状のノズル６が備えられ、ノズ
ル６により基板２の成膜面の中心部の酸素分圧が低く、
周辺部の酸素分圧が高くなるよう酸素が供給される。本
実施例の装置では、レーザ装置１０はエキシマレーザで
あり、パルス発振のレーザ光を出力する。The inside of the chamber 1 can be evacuated to a high vacuum, and the substrate holder 3
A substrate 2 is fixed to the target 5 so as to face the target 5. A heater 4 for heating the substrate 2 is provided inside the substrate holder 3 . Further, a nozzle 6 having an annular shape surrounding the substrate 2 is provided near the substrate 2, and the nozzle 6 lowers the oxygen partial pressure at the center of the film-forming surface of the substrate 2.
Oxygen is supplied so that the oxygen partial pressure in the peripheral area is high. In the apparatus of this embodiment, the laser device 10 is an excimer laser and outputs pulsed laser light.
上記のレーザアブレーション装置を使用し、本発明の方
法で、Ｙ、Ｂａ２Ｃｕ、０ｉ−ｘ酸化物超電導薄膜を作
製した。基板２には、Ｍｇ０ｉｔ結晶基板および５ｒＴ
ｉ○３単結晶基板を用い、基板温度は６５０℃から７５
０℃とした。ターゲット５には、直径２ＣＩ７１のＹ
１Ｂａ２Ｃｕ３０７−Ｘの焼結体を用いた。また、基板
２とターゲット５間の距離は７ ｃｍとした。チャンバ
１の内部をＩ ＸＩＯ’Ｔｏｒｒに排気したのち酸素ガ
スを導入し、基板２の成膜面の中心部で８００ ｍＴｏ
ｒｒ基板２の成膜面の周辺部で２００ ｍＴｏｒｒにし
た。A Y, Ba2Cu, Oi-x oxide superconducting thin film was fabricated using the above laser ablation apparatus and the method of the present invention. Substrate 2 includes a MgOit crystal substrate and a 5rT
Using an i○3 single crystal substrate, the substrate temperature ranges from 650℃ to 75℃.
The temperature was 0°C. Target 5 is a Y with a diameter of 2CI71.
A sintered body of 1Ba2Cu307-X was used. Further, the distance between the substrate 2 and the target 5 was 7 cm. After evacuating the inside of chamber 1 to I
The pressure was set at 200 mTorr around the film-forming surface of the rr substrate 2.
レーザは、波長１９３ｎｍのエキシマレーザを使用し、
レーザ出力は３．５Ｊ／ｃｄ、レーザ光の照射面積を２
Ｘ４ｍ＋ｎ２とし、パルス周波数を５七とした。The laser uses an excimer laser with a wavelength of 193 nm.
The laser output is 3.5 J/cd, and the irradiation area of the laser beam is 2.
X4m+n2, and the pulse frequency was 57.
ターゲット５は、１．５回転／秒で回転させた。Target 5 was rotated at 1.5 revolutions/second.
上記の条件で、３０分開成膜を行ない、得られた酸化物
超電導薄膜の膜厚分布と超電導特性の測定を行なった。Under the above conditions, open film formation was performed for 30 minutes, and the film thickness distribution and superconducting properties of the obtained oxide superconducting thin film were measured.
その結果、本発明の方法で作製した酸化物超電導薄膜の
膜厚分布は、３５Ｘ３５ｍｍ２の範囲で±１０％であっ
た。一方、他の成膜条件は等しくして、酸素分圧を１０
０ｍＴｏｒｒの一定にした従来の方法の場合の膜厚分布
は１０Ｘ１０Ｘ１０の範囲で±１０％であった。本発明
の方法で作製した酸化物超電導薄膜の臨界温度と膜厚の
測定結果を、第１表に示す。As a result, the film thickness distribution of the oxide superconducting thin film produced by the method of the present invention was ±10% in the range of 35×35 mm 2 . On the other hand, the other film forming conditions were kept the same, and the oxygen partial pressure was 10
In the case of the conventional method in which the pressure was kept constant at 0 mTorr, the film thickness distribution was ±10% in the range of 10×10×10. Table 1 shows the measurement results of the critical temperature and film thickness of the oxide superconducting thin film produced by the method of the present invention.
第１表
発明の詳細
な説明したように本発明に従うと、従来よりも大面積で
膜厚分布の少ない薄膜を作製することが可能である。こ
れは、本発明の方法に独特な、基板成膜面上の酸素分圧
を中心部で低く、周辺部で高く設定して、レーザアブレ
ーションを行なう効果である。According to the present invention as described in detail in Table 1, it is possible to fabricate a thin film with a larger area and a smaller thickness distribution than before. This is an effect unique to the method of the present invention in which the oxygen partial pressure on the substrate film-forming surface is set low at the center and high at the periphery, and laser ablation is performed.
第１図は、本発明の方法を実現するレーザアブレーショ
ン装置の一例の概略図である。
第２図は、本発明の方法において与える、基板成膜面上
で酸素分圧の分布の一例を示したグラフである。
〔主な参照番号〕
１・・・チャンバ、 ２・・・基板、
３・・・基板ホルダ、４・・・ヒータ、５・・・ターゲ
ット、６・・・ノズノベ７・・・入射窓、
９・・・集光レンズ、
１０・・・レーザ装置、
１１・・・ターンテーブル
特許出願人 住友電気工業株式会社FIG. 1 is a schematic diagram of an example of a laser ablation apparatus implementing the method of the present invention. FIG. 2 is a graph showing an example of the distribution of oxygen partial pressure on the film-forming surface of the substrate provided in the method of the present invention. [Main reference numbers] 1...Chamber, 2...Substrate, 3...Substrate holder, 4...Heater, 5...Target, 6...Nozzle 7...Incidence window, 9 ... Condensing lens, 10... Laser device, 11... Turntable patent applicant Sumitomo Electric Industries, Ltd.
Claims (1)
向して配置した基板上に薄膜を成長させるレーザアブレ
ーション法により大面積の酸化物超電導薄膜を作製する
方法において、前記基板成膜面の中心部の酸素分圧を高
く、周辺部の酸素分圧を低くして成膜を行うことを特徴
とする大面積の酸化物超電導薄膜の作製方法。In a method for producing a large-area oxide superconducting thin film by a laser ablation method in which a target is irradiated with laser light to grow a thin film on a substrate placed opposite to the target, A method for producing a large-area oxide superconducting thin film, which is characterized by forming the film with a high oxygen partial pressure and a low oxygen partial pressure in the peripheral area.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2313191A JPH04187581A (en) | 1990-11-19 | 1990-11-19 | Method for producing large-area oxide superconducting thin films |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2313191A JPH04187581A (en) | 1990-11-19 | 1990-11-19 | Method for producing large-area oxide superconducting thin films |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04187581A true JPH04187581A (en) | 1992-07-06 |
Family
ID=18038201
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2313191A Pending JPH04187581A (en) | 1990-11-19 | 1990-11-19 | Method for producing large-area oxide superconducting thin films |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04187581A (en) |
-
1990
- 1990-11-19 JP JP2313191A patent/JPH04187581A/en active Pending
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