JPH04192519A - Vertical process for semiconductor heat processing tube structure - Google Patents

Abstract

PURPOSE:To simplify cleaning by supporting an inner tube and outer tube of an inner and outer tube double structure in a pipe holder and adding a heat exchange panel to the tube. CONSTITUTION:An inner tube 1 and an outer tube 2 are combined in an inner and outer tube double structure and supported by a pipe holder 5. Next, the space between the tubes 1 and 2 plays a role of the piping, and gas entering through the gas inlet pipe 7 takes heat from the outer wall of the tube 1, the inner wall of the tube 2, and the heat exchange transfer panel 4, and once it has reached the temperature for heat processing the semiconductor substrate it passes through the holes 3 and is supplied to the semiconductor substrate. The reacted gas is released to the outside through the exhaust pipe 6. In other words, the tubes 1 and 2 are inserted into the pipe holder 5 and space is left between the piping of the tubes 1 and 2 and the pipe holder 5. Since the gas pressure of the gas inlet pipe 7 is higher than standard pressure, clean gas can be supplied to the semiconductor substrate. This structure simplifies the cleaning process.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to the structure of a process tube for semiconductor heat treatment, and particularly to a vertical process tube.

[Conventional technology]

Conventional vertical process tubes are shown in Figure 2 (a) and (b).
), the process tube 8 is a single pipe, and the reaction gas passes through the gas introduction pipe 7 and vertically ascends along the outer wall of the process tube 8, and flows from the top of the process tube 8 to the inside of the process tube 8. The reaction gas and unreacted surplus gas are discharged to the outside through an exhaust pipe 6 housed in a process tube 8.

[Invention or problem to be solved]

In this conventional vertical process tube, gas that is colder than the heat treatment temperature, from room temperature to about 600°C, enters the gas inlet tube 7.
and is sent to the upper part of the process tube 8.

At this time, the temperature of the process tube surface on the gas introduction tube side decreases, and the temperature of the semiconductor substrate also decreases locally, resulting in effective heat treatment! Furthermore, there is a problem with variations in oxide film thickness within the substrate.

Furthermore, in the prior art, since the gas introduction pipe 7 and the exhaust pipe 6 protrude from the outside of the process tube, the vertical process tube is rotated like a horizontal process tube when cleaning. etching,
I was unable to perform rinsing, etc. Therefore, cleaning (etching + rinsing) takes time and handling is difficult.

An object of the present invention is to provide a vertical process tube structure that solves the above problems.

[Means to solve the problem]

In order to achieve the above object, the structure of a vertical process tube for semiconductor heat treatment according to the present invention includes an inner tube, an outer tube, and a piping holder, the structure comprising: an inner tube; The tube has a hole at the top for introducing gas, and the outer tube is installed on the outer circumferential side of the inner tube.A heat exchange plate is installed on the outer wall of the inner tube or the inner wall of the outer tube. The piping holder has an inner tube and an outer tube that are connected to the inner and outer tubes.
It is supported by a heavy structure and is equipped with gas introduction piping and exhaust piping.

[Effect]

It has a structure in which an inner tube and an outer tube with a dual structure inside and outside are supported by a piping holder, and the tube is equipped with a heat exchange plate.

Heat-exchanged gas is introduced into the inner tube, and the inner and outer tubes are removed from the piping holder for cleaning.

〔Example〕

Next, the present invention will be explained with reference to the drawings.

(Example 1) FIG. 1(a) is a longitudinal cross-sectional view showing Example 1 of the present invention, and FIG. 1(b) is a cross-sectional view thereof.

In the figure, the inner tube 1 has a gas introduction hole 3 at the top, the outer tube 2 has a larger diameter than the inner tube 1, and the inner tube 1 and the outer tube 2 are combined into an inner and outer 2g structure. and is supported by the piping holder 5.

Further, the pipe holder 5 has a gas introduction pipe 7 and an exhaust pipe 6. Furthermore, the external tube 2 has a heat exchange plate 4 on its inner peripheral side.

The gap between the tubes 1 and 2 acts as piping, and the gas entering from the gas introduction pipe 7 uniformly removes heat from the outer wall of the inner tube 1, the inner wall of the outer tube 2, and the heat exchange plate 4, and the semiconductor After the heat treatment temperature of the substrate has been sufficiently reached, it passes through the hole 3 and is supplied to the semiconductor substrate in the inner tube 1.

The reaction gas is exhausted to the outside through an exhaust pipe 6.

The inner tube 1 and the outer tube 2 are contained in the piping holder 5 under their own weight. Tube 1.2 and piping holder 5
Although there is a gap between them, clean gas can be supplied to the semiconductor substrate by increasing the gas pressure of the gas introduction pipe 7 higher than normal pressure.

(Example 2) FIG. 4 is a longitudinal sectional view showing a second embodiment of the present invention.

In solid line example 1, the heat exchange plate 4 is provided on the inner wall of the outer tube 2, but in this embodiment, it is attached to the outer wall of the inner tube 1. Furthermore, by forming the inert gas introduction part 9 in the piping holder 5, there is an advantage that oxidation in the furnace due to air entrainment when the semiconductor substrate enters the inner tube 1 can be reduced.

Figure 3 shows a 950°
C is a graph showing the film thickness distribution in the diametrical direction of a semiconductor substrate when oxidized with water and air.7 In the conventional technology, the film thickness near the gas introduction pipe is extremely thin, or has been improved by the present invention. I understand that.

〔Effect of the invention〕

As explained above, in the present invention, the cold gas entering from the gas introduction pipe flows along the outer wall of the inner tube, and the gas temperature is efficiently raised by the heat exchange plate, so the amount of gas flowing can be increased compared to the conventional method. be able to. In addition, the temperature distribution in the radial direction within the inner tube (1) becomes the same circular shape, and the in-plane heat treatment amount and oxide film thickness of the semiconductor substrate are more uniform than in the conventional vertical process tube.

Furthermore, in the vertical process tube of the present invention, the piping holder can be separated from the tube, and etching and rinsing can be performed while rotating, which has the advantage that cleaning (etcher rinsing) can be easily performed. .

[Brief explanation of the drawing]

Fig. 1 fa) is a longitudinal sectional view showing Embodiment 1 of the present invention, Fig. 1(b) is a transverse sectional view when viewed from above, and Fig. 2 f
a) is a longitudinal cross-sectional view showing the conventional example, FIG. 2(b) is a cross-sectional view thereof, FIG. 3 is a view showing the film thickness distribution, and FIG. 4 is a view showing Example 2 of the present invention. FIG. 1... Internal tube 2... External tube 3.
... Hole 4 ... Heat exchange plate 5 ... Piping holter 6 ... Exhaust pipe 7 ... Gas introduction pipe Fig. 1 (b) Fig. 1 r. Figure 4

Claims (1)

[Claims] (1) The structure of a vertical process tube for semiconductor processing that has an inner tube, an outer tube, and a piping holder, where the inner tube has a hole at the top for introducing gas, and the outer tube has the following components: It is installed on the outer circumferential side of the inner tube, and has a heat exchange plate on the outer wall of the inner tube or the inner wall of the outer tube, and the piping holder connects the inner tube and the outer tube between the inside and outside.
A structure of a vertical process tube for semiconductor heat treatment, characterized in that it is supported in a heavy structure and is equipped with gas introduction piping and exhaust piping.