JPH04196604A - Oscillator - Google Patents

Oscillator

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Publication number
JPH04196604A
JPH04196604A JP32160090A JP32160090A JPH04196604A JP H04196604 A JPH04196604 A JP H04196604A JP 32160090 A JP32160090 A JP 32160090A JP 32160090 A JP32160090 A JP 32160090A JP H04196604 A JPH04196604 A JP H04196604A
Authority
JP
Japan
Prior art keywords
frequency band
circuit
low frequency
feedback circuit
amplifier circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP32160090A
Other languages
Japanese (ja)
Inventor
Yotaro Umeda
洋太郎 楳田
Tetsuo Hirota
哲夫 廣田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP32160090A priority Critical patent/JPH04196604A/en
Publication of JPH04196604A publication Critical patent/JPH04196604A/en
Pending legal-status Critical Current

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Abstract

PURPOSE:To generate production of phase noise by connecting a positive feedback circuit at a high frequency band between an input terminal and an output terminal of an amplifier circuit so as to form a closed loop and connecting a negative feedback circuit at a low frequency band so as to form a closed loop thereby forming the oscillator. CONSTITUTION:The oscillator is provided with a transistor(TR) amplifier circuit 1, a high frequency band feedback circuit 2, a low frequency band feedback circuit 3, and an equivalent noise voltage source 4 for the TR amplifier circuit generating a noise voltage at a low frequency band. Then a closed loop comprising the amplifier circuit 1 and the high frequency band feedback circuit 2 acts like a positive feedback circuit and the oscillation is caused at a high frequency band. Moreover, the closed loop comprising the amplifier circuit 1 and the low frequency feedback circuit 3 acts like a negative feedback loop and an equivalent noise voltage applied to the amplifier circuit 1 is reduced. Thus, the production of phase noise caused by up-conversion of low frequency noise resulting from the nonlinearity of the TR amplifier circuit is reduced.

Description

【発明の詳細な説明】 [産業上の利用分野〕 本発明は、高周波帯における発振器に関するものである
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an oscillator in a high frequency band.

[従来の技術] 第5図に従来の発振器の一例を示す。ここで、1はトラ
ンジスタ増幅回路、2は高周波帯帰還回路、T1は増幅
回路1の入力端子、T2は増幅回路1の出力端子、T3
は高周波帯帰還回路2の入力端子、T4は高周波帯帰還
回路2の出力端子、13,14,16.17は高周波用
キャパシタ、15.18は高周波用インダクタ(18は
高周波阻止用)、11はFET(電界効果トランジスタ
)、12は抵抗器、22は定電圧電源、’Toは高周波
信号出力端子である。
[Prior Art] FIG. 5 shows an example of a conventional oscillator. Here, 1 is a transistor amplifier circuit, 2 is a high frequency band feedback circuit, T1 is an input terminal of amplifier circuit 1, T2 is an output terminal of amplifier circuit 1, and T3
is the input terminal of the high frequency band feedback circuit 2, T4 is the output terminal of the high frequency band feedback circuit 2, 13, 14, 16.17 are high frequency capacitors, 15.18 is a high frequency inductor (18 is for high frequency blocking), 11 is a high frequency inductor FET (field effect transistor), 12 is a resistor, 22 is a constant voltage power supply, and 'To is a high frequency signal output terminal.

この回路はコルピッツ形発振回路としてよく知られてい
るもので、入力端子T1に入力された高周波信号は、ト
ランジスタ増幅回路1で反転増幅された後、出力端子T
2に出力される。
This circuit is well known as a Colpitts type oscillator circuit, and the high frequency signal input to the input terminal T1 is inverted and amplified by the transistor amplifier circuit 1, and then the high frequency signal is inverted and amplified by the transistor amplifier circuit 1.
2 is output.

この信号は帰還回路2の入力端子T3に入力され、高周
波帯帰還回路2内である特定の周波数付近で位相が約1
80度変化した後、出力端子T4に出力される。この帰
還信号は再びトランジスタ増幅回路1の入力信号となる
。このとき、端子T1に注目すると、最初にトランジス
タ増幅回路1に入力された信号とトランジスタ増幅回路
1、高周波帯帰還回路2を通過してきた信号は、ある特
定の周波数で位相が一致し強め合うことにより、その周
波数での高周波信号は持続し、発振する。それ以外の周
波数では位相がずれるために信号は減衰する。
This signal is input to the input terminal T3 of the feedback circuit 2, and the phase is approximately 1 around a certain frequency in the high frequency band feedback circuit 2.
After changing by 80 degrees, it is output to the output terminal T4. This feedback signal becomes the input signal of the transistor amplifier circuit 1 again. At this time, if we pay attention to the terminal T1, the signal that is first input to the transistor amplifier circuit 1 and the signal that has passed through the transistor amplifier circuit 1 and the high-frequency band feedback circuit 2 match in phase at a certain frequency and strengthen each other. As a result, the high-frequency signal at that frequency continues and oscillates. At other frequencies, the signal is attenuated due to the phase shift.

本発振器の発振周波数fは、高周波用コンデンサ13,
14.16の容量をそれぞれ、C1゜Co、C2とし、
高周波用インダクタ15のインダクタンスをLOとした
とき、次式で与えられる 〔発明が解決しようとする課題〕 従来の発振回路では、雑誌「アイイーイーイー・トラン
ス・オン・マイクロウエーブセオリーアンドテクニクス
、第33巻、1985年3月」に記載の論文「アナリシ
ス オブノイズアップコンバージョン イン マイクロ
ウェーブ FETオシレターズ」 (″)1.  J、
 Siweris and B、5chiek: ”A
nalysis of No1se Upconver
sion in Microwave F ET 0s
cillators”、IE E E Trans、o
n Microwave Theory and Te
chniques、 Vol、 MTT−33,No、
3. March1985”)に示されるように、低周
波帯で発生する1/f雑音は増幅回路内FETの非線型
性により発振周波数の両側にアップコンバートされ、大
きな位相雑音を発生する欠点があった。
The oscillation frequency f of this oscillator is determined by the high frequency capacitor 13,
14.Let the capacities of 16 be C1゜Co and C2, respectively,
When the inductance of the high frequency inductor 15 is LO, it is given by the following equation [Problem to be solved by the invention] In the conventional oscillation circuit, ``Analysis of Noise Upconversion in Microwave FET Oscillators''('') 1. J.
Siweris and B, 5chiek: ”A
Analysis of No.1se Upconver
sion in Microwave FET 0s
”, IE E E Trans, o
n Microwave Theory and Te
chniques, Vol, MTT-33, No.
3. March 1985''), the 1/f noise generated in the low frequency band is up-converted to both sides of the oscillation frequency due to the nonlinearity of the FET in the amplifier circuit, resulting in large phase noise.

ここにおいて本発明は前記従来の発振回路の欠点を解決
するのに有効な発振器を提供せんとするものである。
SUMMARY OF THE INVENTION The present invention aims to provide an oscillator that is effective in overcoming the drawbacks of the conventional oscillation circuits.

(課題を解決するための手段) 前記課題の解決は、本発明の発振器が、増幅回路の入出
力端間を高周波帯において正帰還回路で閉ループ接続す
るとともに、低周波帯において負帰還回路で閉ループ接
続して発振器を構成したことにより達成される。
(Means for Solving the Problem) The oscillator of the present invention provides a closed loop connection between the input and output terminals of an amplifier circuit using a positive feedback circuit in a high frequency band, and a closed loop connection using a negative feedback circuit in a low frequency band. This is achieved by connecting them to form an oscillator.

〔作用] 本発明では増幅回路を高周波帯において正帰還回路で閉
ループ接続するとともに、低周波帯において負帰還回路
で閉ループすることにより低周波帯での雑音を抑圧し、
低減することができる。このため、低周波帯の雑音が、
通常の高周波帯における正帰還ループのみを有する発振
器に比べ少なくなり、増幅回路内のFETによりアップ
コンバートされた結果体じる位相雑音も低減される。
[Function] In the present invention, the amplifier circuit is connected in a closed loop with a positive feedback circuit in the high frequency band, and is connected in a closed loop with a negative feedback circuit in the low frequency band, thereby suppressing noise in the low frequency band.
can be reduced. Therefore, the noise in the low frequency band is
This is less than an oscillator having only a positive feedback loop in a normal high frequency band, and the phase noise that appears as a result of upconversion by the FET in the amplifier circuit is also reduced.

〔実施例1〕 第1図は本発明の請求項(1)の実施例であって、■は
電圧利得αを持つトランジスタ増幅回路、2は高周波帯
帰還回路、3は低周波帯において電圧利得βを持つ低周
波帯帰還回路、4は低周波帯にて雑音電圧■4を発生す
るトランジスタ増幅回路の等価雑音電圧源、T1はトラ
ンジスタ増幅回路の入力端子、T2はトランジスタ増幅
回路の出力端子、T3は高周波帯帰還回路の入力端子、
T4は高周波帯帰還回路の出力端子、T5は低周波帯帰
還回路の入力端子、T6は低周波帯帰還回路の出力端子
である。ここで、低周波帯について着目し、等価雑音電
圧源入力点の低周波の電位を■3、トランジスタ増幅回
路入力点の低周波の電位を■2、トランジスタ増幅回路
出力点の低周波の電位を■3とすると、 ■2=■1+V、、□■ ■3=α■2   □■ V、=β−V3   □■ ■、■、■よりV、、V3を消去して整理すると、V2
=V、/(1−αβ) ここで、αβ〈0 即ちトランジスタ増幅回路1、低周
波帯帰還回路3を含む回路が負帰還ループを構成してい
るときには、トランジスタ増幅回路に入力される等価雑
音電圧が■7から■7/(1−αβ)に減少する。その
結果、トランジスタ増幅回路の非線型性による低周波雑
音のアップコンバージョンに起因する位相雑音の発生量
は低減される。
[Embodiment 1] Fig. 1 shows an embodiment of claim (1) of the present invention, where ■ is a transistor amplifier circuit with a voltage gain α, 2 is a high frequency band feedback circuit, and 3 is a transistor amplifier circuit with a voltage gain in a low frequency band. A low frequency band feedback circuit with β, 4 is an equivalent noise voltage source of a transistor amplifier circuit that generates noise voltage ■4 in a low frequency band, T1 is an input terminal of the transistor amplifier circuit, T2 is an output terminal of the transistor amplifier circuit, T3 is the input terminal of the high frequency band feedback circuit,
T4 is an output terminal of the high frequency band feedback circuit, T5 is an input terminal of the low frequency band feedback circuit, and T6 is an output terminal of the low frequency band feedback circuit. Here, focusing on the low frequency band, we will define the low frequency potential at the input point of the equivalent noise voltage source as ■3, the low frequency potential at the input point of the transistor amplifier circuit as ■2, and the low frequency potential at the output point of the transistor amplifier circuit. ■3, then ■2=■1+V,,□■ ■3=α■2 □■ V,=β−V3 □■ If we delete V from ■,■,■ and rearrange it, we get V2
=V, /(1-αβ) Here, αβ<0 In other words, when the circuit including the transistor amplifier circuit 1 and the low-frequency band feedback circuit 3 forms a negative feedback loop, the equivalent noise input to the transistor amplifier circuit The voltage decreases from ■7 to ■7/(1-αβ). As a result, the amount of phase noise generated due to upconversion of low frequency noise due to nonlinearity of the transistor amplifier circuit is reduced.

なお、本実施例において低周波帰還回路が受動素子のみ
で構成されているときには 1βl≦1となるが、低周波帰還回路内に低周波帯増幅
器が含まれる場合には lβ1〉1とすることが可能である。
In this embodiment, when the low frequency feedback circuit is composed of only passive elements, 1βl≦1, but when the low frequency feedback circuit includes a low frequency band amplifier, it is possible to set lβ1>1. It is possible.

〔実施例2〕 第2図は本発明の請求項(2)の実施例であって、1は
電圧利得αを持つトランジスタ増幅回路、5は高周波帯
においてトランジスタ増幅回路とともに正帰還ループを
構成し、低周波帯において電圧利得βを持つ帰還回路、
4は低周波帯にて雑音電圧■7を発生するトランジスタ
増幅回路の等価雑音電圧源、T1はトランジスタ増幅回
路の入力端子、T2はトランジスタ増幅回路の出力端子
、T7は帰還回路の入力端子、T8は帰還回路の出力端
子である。ここで、低周波帯について着目し、等価雑音
電圧源入力点の低周波の電位を■1.トランジスタ増幅
回路入力点の低周波の電位を■2、トランジスタ増幅回
路出力点の低周波の電位を■3、とすると、実施例1と
同様の議論より、 V、=V、/(1−αβ) ここで、αβ〈O即ちトランジスタ増幅回路1、低周波
帯帰還回路3を含む回路が負帰還ループを構成している
ときには、トランジスタ増幅回路に入力される等価雑音
電圧がV7からV。
[Embodiment 2] Fig. 2 shows an embodiment of claim (2) of the present invention, in which 1 is a transistor amplifier circuit having a voltage gain α, and 5 is a transistor amplifier circuit that forms a positive feedback loop together with the transistor amplifier circuit in a high frequency band. , a feedback circuit with voltage gain β in the low frequency band,
4 is the equivalent noise voltage source of the transistor amplifier circuit that generates the noise voltage 7 in the low frequency band, T1 is the input terminal of the transistor amplifier circuit, T2 is the output terminal of the transistor amplifier circuit, T7 is the input terminal of the feedback circuit, T8 is the output terminal of the feedback circuit. Here, we will focus on the low frequency band and calculate the low frequency potential at the input point of the equivalent noise voltage source. Assuming that the low-frequency potential at the input point of the transistor amplifier circuit is ■2, and the low-frequency potential at the output point of the transistor amplifier circuit is ■3, from the same discussion as in Example 1, V, = V, / (1-αβ ) Here, when αβ<O, that is, the circuit including the transistor amplifier circuit 1 and the low frequency band feedback circuit 3 forms a negative feedback loop, the equivalent noise voltage input to the transistor amplifier circuit varies from V7 to V.

/(1−αβ)に減少する。その結果、トランジスタ増
幅回路の非線型性による低周波雑音のアップコンバージ
ョンに起因する位相雑音の発生量は低減される。
/(1-αβ). As a result, the amount of phase noise generated due to upconversion of low frequency noise due to nonlinearity of the transistor amplifier circuit is reduced.

なお、本実施例において帰還回路が受動素子のみで構成
されているときには 1β1≦1となるが、低周波帰還回路内に低周波帯増幅
器が含まれる場合には 1β1〉1とすることが可能である。
In this example, when the feedback circuit is composed of only passive elements, 1β1≦1, but if the low frequency feedback circuit includes a low frequency band amplifier, it is possible to set 1β1>1. be.

[実施例3〕 第3図は本発明の別の実施例であって、1はトランジス
タ増幅回路、2は高周波帯帰還回路、3は低周波帯帰還
回路、6は高周波および低周波の阻止回路、T1はトラ
ンジスタ増幅回路の入力端子、T2はトランジスタ増幅
回路の出力端子、T3は高周波帯帰還回路の入力端子、
T4は高周波帯帰還回路の出力端子、T5は低周波帯帰
還回路の入力端子、T6は低周波帯帰還回路の出力端子
、Toは高周波信号出力端子、11はFET (電界効
果トランジスタ)、12は抵抗器、13,14,16.
17は高周波用コンデンサ、15.18.20は高周波
用インダクタ(18,20は高周波阻止用)、19は低
周波通過用コンデンサ、21は低周波阻止用インダクタ
、22は定電圧電源である。
[Embodiment 3] Fig. 3 shows another embodiment of the present invention, in which 1 is a transistor amplifier circuit, 2 is a high frequency band feedback circuit, 3 is a low frequency band feedback circuit, and 6 is a high frequency and low frequency blocking circuit. , T1 is the input terminal of the transistor amplifier circuit, T2 is the output terminal of the transistor amplifier circuit, T3 is the input terminal of the high frequency band feedback circuit,
T4 is the output terminal of the high frequency band feedback circuit, T5 is the input terminal of the low frequency band feedback circuit, T6 is the output terminal of the low frequency band feedback circuit, To is the high frequency signal output terminal, 11 is the FET (field effect transistor), and 12 is the Resistor, 13, 14, 16.
17 is a high frequency capacitor, 15, 18 and 20 are high frequency inductors (18 and 20 are for high frequency blocking), 19 is a low frequency passing capacitor, 21 is a low frequency blocking inductor, and 22 is a constant voltage power supply.

本実施例は、前述のコルピッツ発振器に本発明を適用し
たものであり、高周波用コンデンサ13.14.16の
容量をそれぞれ、CI+co+02とし、高周波用イン
ダクタ15のインダクタンスをLoとしたとき、発振高
波数fは次式で与えられる。
In this embodiment, the present invention is applied to the aforementioned Colpitts oscillator, and when the capacitances of the high-frequency capacitors 13, 14, and 16 are set to CI+co+02, and the inductance of the high-frequency inductor 15 is set to Lo, the oscillation high wave number f is given by the following equation.

本実施例では、高周波用インダクタ18゜20と低周波
通過用コンデンサ19により低周波帯の帰還回路を構成
するとともに、低周波阻止用のインダクタ21により電
源を介しての低周波信号の接地を防ぐことにより、低周
波帯の雑音に対する負帰還を可能としている。このこと
から低周波雑音が低減され、結果として低周波雑音のア
ップコンバージョンに起因する位相雑音が低減される。
In this embodiment, a high frequency inductor 18° 20 and a low frequency pass capacitor 19 constitute a feedback circuit for the low frequency band, and a low frequency blocking inductor 21 prevents low frequency signals from being grounded via the power supply. This enables negative feedback against noise in the low frequency band. This reduces low frequency noise and, as a result, reduces phase noise due to upconversion of low frequency noise.

〔実施例4〕゛ 第4図は本発明のさらに別の実施例であって、1はトラ
ンジスタ増幅回路、2は高周波帯帰還回路、3は低周波
帯帰還回路、6は高周波および低周波の阻止回路、T1
はトランジスタ増幅回路の入力端子、T2はトランジス
タ増幅回路の出力端子、T3は高周波帯帰還回路の入力
端子、T4は高周波帯帰還回路の出力端子、T5は低周
波帯帰還回路の入力端子、T6は低周波帯帰還回路の8
カ端子(高周波帯帰還回路の出力端子T4と共用)、T
oは高周波信号出力端子、11はFET (電界効果ト
ランジスタ)、12は抵抗器、13.17は高周波用コ
ンデンサ、15.1B、20.23は高周波用インダク
タ(18,20は高周波阻止用)、21は低周波阻止用
インダクタ、22は定電圧源、23はFETのゲート・
ソース間容量、24は負荷抵抗である。
[Embodiment 4] Fig. 4 shows yet another embodiment of the present invention, in which 1 is a transistor amplifier circuit, 2 is a high frequency band feedback circuit, 3 is a low frequency band feedback circuit, and 6 is a high frequency and low frequency band feedback circuit. Blocking circuit, T1
is the input terminal of the transistor amplifier circuit, T2 is the output terminal of the transistor amplifier circuit, T3 is the input terminal of the high frequency band feedback circuit, T4 is the output terminal of the high frequency band feedback circuit, T5 is the input terminal of the low frequency band feedback circuit, and T6 is the input terminal of the low frequency band feedback circuit. 8 of the low frequency band feedback circuit
Terminal (shared with output terminal T4 of high frequency band feedback circuit), T
o is a high frequency signal output terminal, 11 is a FET (field effect transistor), 12 is a resistor, 13.17 is a high frequency capacitor, 15.1B, 20.23 are high frequency inductors (18 and 20 are for high frequency blocking), 21 is a low frequency blocking inductor, 22 is a constant voltage source, and 23 is an FET gate.
The source-to-source capacitance 24 is a load resistance.

本実施例は、FETゲート・ソース間容量Cgsが無視
できないマイクロ波帯以上の周波数でよ(使用される、
コルピッツ発振器の一変形例に本発明を適用したもので
あって、FETのゲート・ソース間容量C95、高周波
用コンデンサ13の容量をCい高周波用インダクタ15
のインダクタンスをLoとすれば、発振周波数はほぼ次
式で与えられる。
This example is suitable for frequencies above the microwave band where the FET gate-source capacitance Cgs cannot be ignored.
The present invention is applied to a modified example of a Colpitts oscillator, in which the gate-source capacitance C95 of the FET and the capacitance C95 of the high frequency capacitor 13 are changed to a high frequency inductor 15.
If the inductance of is Lo, the oscillation frequency is approximately given by the following equation.

本実施例では、高周波用インダクタ15゜18と定電圧
源22によりアースを介して低周波帯の帰還回路を構成
するとともに、低周波阻止回路6によりソースが低周波
的に接地されることを防ぎ、低周波帯の雑音に対する負
帰還を可能としている。このことから低周波雑音が低減
され、その結果低周波雑音のアップコンバージョンに起
因する位相雑音が低減される。また、本実施例では、高
周波用インダクタ15が高周波帯帰還回路2と低周波帯
帰還回路3の間で、高周波用コンデンサ13が高周波帯
帰還回路2と低周波阻止回路6の間で共用されている。
In this embodiment, a high frequency inductor 15° 18 and a constant voltage source 22 constitute a feedback circuit for a low frequency band via the ground, and a low frequency blocking circuit 6 prevents the source from being grounded at low frequencies. , which enables negative feedback against noise in the low frequency band. This reduces low frequency noise and, as a result, reduces phase noise due to upconversion of the low frequency noise. Furthermore, in this embodiment, the high frequency inductor 15 is shared between the high frequency band feedback circuit 2 and the low frequency band feedback circuit 3, and the high frequency capacitor 13 is shared between the high frequency band feedback circuit 2 and the low frequency blocking circuit 6. There is.

なお、本発明の実施例3.4では高・低周波阻止回路、
および低周波帯帰還回路内に低周波阻止インダクタを有
しているが、この低周波阻止インダクタはトランジスタ
または高抵抗を用いた定電流回路により代用が可能であ
る。
In addition, in Example 3.4 of the present invention, a high/low frequency blocking circuit,
Although the low frequency band feedback circuit includes a low frequency blocking inductor, this low frequency blocking inductor can be replaced by a constant current circuit using a transistor or a high resistance.

〔発明の効果〕〔Effect of the invention〕

以上説明したように、本発明の発振器においては、低周
波帯の負帰還により低周波帯の雑音を抑圧する。その結
果、増幅回路内増幅素子のもつ非線形による、低周波雑
音の発振周波数の両側へのアップコンバージョンに起因
する位相雑音を低減することができる。
As explained above, in the oscillator of the present invention, noise in the low frequency band is suppressed by negative feedback in the low frequency band. As a result, it is possible to reduce phase noise caused by upconversion of low frequency noise to both sides of the oscillation frequency due to nonlinearity of the amplification element in the amplifier circuit.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の発振器の構成図、第2図は本発明の発
振器の別の構成図、第3図は本発明の実施例、第4図は
本発明の別の実施例、第5図は従来の例である。 1・・・増幅回路、 2・・・高周波帯帰還回路、 3・・・低周波帯帰還回路、 4・・・増幅回路の等価雑音電圧源。 第2叉 r −−−−−−−−−−−−−一−−光]第3図 第4「
FIG. 1 is a block diagram of an oscillator according to the present invention, FIG. 2 is another block diagram of an oscillator according to the present invention, FIG. 3 is an embodiment of the present invention, FIG. 4 is another embodiment of the present invention, and FIG. The figure shows a conventional example. DESCRIPTION OF SYMBOLS 1...Amplification circuit, 2...High frequency band feedback circuit, 3...Low frequency band feedback circuit, 4...Equivalent noise voltage source of the amplifier circuit. 2nd fork r------------------1--light] Figure 3, Figure 4

Claims (2)

【特許請求の範囲】[Claims] (1)トランジスタ増幅回路と高周波帯帰還回路と低周
波帯帰還回路から構成され、前記増幅回路の出力が前記
高周波帯帰還回路および前記低周波帯帰還回路の入力に
接続され、前記高周帯帰還回路および前記低周波帯帰還
回路の出力が前記増幅回路の入力に帰還ループ接続され
、前記増幅回路と前記高周波帯帰還回路から構成される
閉ループは正帰還として動作し、高周波帯において発振
を行い、前記増幅回路と前記低周波帯帰還回路から構成
される閉ループは負帰還として動作することを特徴とす
る発振器。
(1) Consisting of a transistor amplifier circuit, a high frequency band feedback circuit, and a low frequency band feedback circuit, the output of the amplifier circuit is connected to the input of the high frequency band feedback circuit and the low frequency band feedback circuit, and the high frequency band feedback circuit is connected to the input of the high frequency band feedback circuit and the low frequency band feedback circuit. The output of the circuit and the low frequency band feedback circuit is connected in a feedback loop to the input of the amplifier circuit, and a closed loop composed of the amplifier circuit and the high frequency band feedback circuit operates as a positive feedback and oscillates in a high frequency band, An oscillator characterized in that a closed loop composed of the amplifier circuit and the low frequency band feedback circuit operates as negative feedback.
(2)トランジスタ増幅回路と帰還回路から構成され、
前記増幅回路の出力が前記帰還回路の入力に接続され、
前記帰還回路の出力が前記増幅回路の入力に帰還ループ
接続され、前記増幅回路と前記帰還回路から構成される
閉ループは高周波帯において正帰還として動作し発振を
行い、低周波帯において負帰還として動作することを特
徴とする発振器。
(2) Consists of a transistor amplifier circuit and a feedback circuit,
an output of the amplifier circuit is connected to an input of the feedback circuit,
The output of the feedback circuit is connected to the input of the amplifier circuit in a feedback loop, and a closed loop composed of the amplifier circuit and the feedback circuit operates as a positive feedback in a high frequency band to oscillate, and operates as a negative feedback in a low frequency band. An oscillator characterized by:
JP32160090A 1990-11-26 1990-11-26 Oscillator Pending JPH04196604A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP32160090A JPH04196604A (en) 1990-11-26 1990-11-26 Oscillator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP32160090A JPH04196604A (en) 1990-11-26 1990-11-26 Oscillator

Publications (1)

Publication Number Publication Date
JPH04196604A true JPH04196604A (en) 1992-07-16

Family

ID=18134349

Family Applications (1)

Application Number Title Priority Date Filing Date
JP32160090A Pending JPH04196604A (en) 1990-11-26 1990-11-26 Oscillator

Country Status (1)

Country Link
JP (1) JPH04196604A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007116473A (en) * 2005-10-20 2007-05-10 Sharp Corp Voltage controlled oscillator, receiver module, portable device, 1 segment broadcast receiver, mobile satellite broadcast receiver, and digital terrestrial receiver
JP4916310B2 (en) * 2003-08-06 2012-04-11 シナジー マイクロウェーブ コーポレーション Low phase noise and low thermal drift oscillator with frequency selectivity
JP4939228B2 (en) * 2003-12-09 2012-05-23 シナジー マイクロウェーブ コーポレーション Voltage controlled oscillator with user-configurable thermal drift
JP2014512155A (en) * 2011-04-18 2014-05-19 レイセオン カンパニー Low noise oscillator

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4916310B2 (en) * 2003-08-06 2012-04-11 シナジー マイクロウェーブ コーポレーション Low phase noise and low thermal drift oscillator with frequency selectivity
JP4939228B2 (en) * 2003-12-09 2012-05-23 シナジー マイクロウェーブ コーポレーション Voltage controlled oscillator with user-configurable thermal drift
JP2007116473A (en) * 2005-10-20 2007-05-10 Sharp Corp Voltage controlled oscillator, receiver module, portable device, 1 segment broadcast receiver, mobile satellite broadcast receiver, and digital terrestrial receiver
JP2014512155A (en) * 2011-04-18 2014-05-19 レイセオン カンパニー Low noise oscillator

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