JPH04198775A - Electrostatic breakdown testing method for semiconductor device - Google Patents

Abstract

PURPOSE:To improve the reliability of test data by connecting an outer mold and an electric wiring with a liquid. CONSTITUTION:When a switch 3 is closed to apply the voltage generated by a DC power source 2 to the external lead of a semiconductor device 1, the voltage is applied to an IC chip via a connected internal lead. The IC chip is connected to a metal bar 5 from a conducting liquid 6 via the outer mold of the device 1, the outer mold serves as a capacitor, and a charging current flows in the IC chip. The applied voltage is increased or decreased to change the voltage or current applied to the IC chip, and the actions are repeated until it breaks down. The connecting property between the outer mold and an electric wiring is improved, the reproducibility of connection is improved, and the reliability of the test data can be improved.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for testing electrostatic discharge damage of semiconductor devices.

[Conventional technology]

A conventional electrostatic breakdown test method for semiconductor devices is shown in FIG. In the figure, (1) is the semiconductor device (test sample), (21 is the DC power supply, (3) is the switch that connects the DC power supply (2) to the semiconductor device (1), and (4) is the semiconductor device (1). A conductive mat, such as rubber, is shown in contact with the outer mold part of the.

Next, the operation will be explained.

When the voltage generated by the DC power source (2) is applied to the external lead of the semiconductor device (1) by closing the switch (3), the voltage is applied to the external lead of the semiconductor device (1) via the internal lead connected to it.
A voltage is applied to the C chip. After passing through the exterior mold of the semiconductor device (1), the IC chip is made of conductive pine!・Since it is connected to 4, the outer mold acts as a capacitor, and a current flows inside the IC chip to charge this capacitor. The DC voltage value applied at this time is increased or decreased to change the voltage or current applied to the IC chip.
This operation is repeated nine times until the C chip is destroyed.

[Problem to be solved by the invention]

The conventional electrostatic breakdown test method for semiconductor devices was configured as follows. Contact with the exterior mold of the semiconductor device is made with a conductive mat, and since it is a solid-to-solid contact, the semiconductor device There was a problem in that the contact resistance changed each time the two were connected.

This invention was made to solve the above-mentioned problems, and provides a method for electrostatic discharge damage testing for semiconductor devices that improves the connectivity between the exterior mold of a semiconductor device and electrical wiring, and also improves reproducibility. The purpose is to

[lI! Means to solve the problem〕

The electrostatic breakdown test method for semiconductor devices according to the present invention includes:
The exterior mold of the semiconductor device is immersed in a conductive liquid, and the liquid and electrical wiring are connected using a metal rod.

[Effect]

In the electrostatic breakdown test method for a semiconductor device according to the present invention, the exterior mold of the semiconductor device is immersed in a liquid having conductive properties, so that the exterior mold of the semiconductor device and the electrical wiring can be bonded well.

〔Example〕

An embodiment of the present invention will be described below with reference to the drawings.

In Figure 1, (6) is a conductive liquid, (7)
(5) is a metal rod that connects the liquid (6) with electrical wiring. Note that the reference numerals (1) to (3) in the figure are the same as those of the above-mentioned conventional device, and the explanation thereof will be omitted.

Next, the operation will be explained. When the voltage generated by the DC power supply (2) is applied to the external lead of the semiconductor device (11) by closing the switch (3), the voltage is applied to the IC chip via the internal lead connected to this. Since the IC chip is connected to the metal rod (5) through the conductive liquid (6) through the semiconductor device (11), the exterior mold acts as a capacitor, and the capacitor is charged. Current flows within the IC chip.

The voltage applied at this time is increased or decreased to change the voltage or current applied to the IC chip, and the above operation is repeated until the IC chip is destroyed.

〔Effect of the invention〕

As described above, according to the present invention, since the exterior mold of a semiconductor device and the electrical wiring are bonded using liquid, the connectivity between the exterior mold and the electrical wiring is improved, and the reproducibility of the coupling is also significantly improved. This has the effect of greatly improving the reliability of the test data obtained.

[Brief explanation of the drawing]

FIG. 1 is a cross-sectional structural diagram of an electrostatic discharge breakdown testing apparatus for semiconductor devices which is an embodiment of the present invention, and FIG. 2 is a cross-sectional structural diagram of a conventional electrostatic discharge breakdown testing method for semiconductor devices. In the figure, (1) is a semiconductor device, (2) is a DC power supply, (
3) is a switch, (5) is a metal rod, (6) is a liquid, (7
) indicates a body. In addition, in the figures, the same reference numerals indicate the same or equivalent parts.

Claims (1)

[Claims] A method for testing electrostatic breakdown of semiconductor devices, which is characterized in that in the pseudo package charging method, which is one of the electrostatic breakdown testing methods, a liquid is poured into the contact surface between the package of the semiconductor device and the test terminal to improve contact properties. .