JPH0420274B2 - - Google Patents

Info

Publication number
JPH0420274B2
JPH0420274B2 JP56156282A JP15628281A JPH0420274B2 JP H0420274 B2 JPH0420274 B2 JP H0420274B2 JP 56156282 A JP56156282 A JP 56156282A JP 15628281 A JP15628281 A JP 15628281A JP H0420274 B2 JPH0420274 B2 JP H0420274B2
Authority
JP
Japan
Prior art keywords
region
layer
junction
impurity concentration
electric field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56156282A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5857760A (ja
Inventor
Hirobumi Oochi
Hiroshi Matsuda
Makoto Morioka
Masahiko Kawada
Kazuhiro Kurata
Yasushi Koga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP56156282A priority Critical patent/JPS5857760A/ja
Priority to KR8204346A priority patent/KR900000074B1/ko
Priority to EP82109103A priority patent/EP0076495B1/de
Priority to DE8282109103T priority patent/DE3277353D1/de
Publication of JPS5857760A publication Critical patent/JPS5857760A/ja
Priority to US06/880,118 priority patent/US4740819A/en
Publication of JPH0420274B2 publication Critical patent/JPH0420274B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/225Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H10F30/2255Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes in which the active layers form heterostructures, e.g. SAM structures

Landscapes

  • Light Receiving Elements (AREA)
JP56156282A 1981-10-02 1981-10-02 光半導体装置 Granted JPS5857760A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP56156282A JPS5857760A (ja) 1981-10-02 1981-10-02 光半導体装置
KR8204346A KR900000074B1 (ko) 1981-10-02 1982-09-27 광 검출용 반도체장치
EP82109103A EP0076495B1 (de) 1981-10-02 1982-10-01 Fotodiode
DE8282109103T DE3277353D1 (en) 1981-10-02 1982-10-01 Photodiode
US06/880,118 US4740819A (en) 1981-10-02 1986-06-30 Photo semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56156282A JPS5857760A (ja) 1981-10-02 1981-10-02 光半導体装置

Publications (2)

Publication Number Publication Date
JPS5857760A JPS5857760A (ja) 1983-04-06
JPH0420274B2 true JPH0420274B2 (de) 1992-04-02

Family

ID=15624407

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56156282A Granted JPS5857760A (ja) 1981-10-02 1981-10-02 光半導体装置

Country Status (1)

Country Link
JP (1) JPS5857760A (de)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55132079A (en) * 1979-03-30 1980-10-14 Nec Corp Semiconductor device

Also Published As

Publication number Publication date
JPS5857760A (ja) 1983-04-06

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