JPH042032A - Specimen stage control method for charged particle beam device - Google Patents
Specimen stage control method for charged particle beam deviceInfo
- Publication number
- JPH042032A JPH042032A JP2102375A JP10237590A JPH042032A JP H042032 A JPH042032 A JP H042032A JP 2102375 A JP2102375 A JP 2102375A JP 10237590 A JP10237590 A JP 10237590A JP H042032 A JPH042032 A JP H042032A
- Authority
- JP
- Japan
- Prior art keywords
- sample
- stored
- specimen
- phase difference
- angle
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
Abstract
Description
【発明の詳細な説明】
(産業上の利用分野)
本発明は、走査電子顕微鏡などにおける試料ステージの
制御方法に関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a method of controlling a sample stage in a scanning electron microscope or the like.
(従来の技術)
走査電子顕微鏡などにおいては、試料をX、Y方向に水
平移動させると共に、試料を傾斜させて観察することも
行っている。そのため、試料ステージは、傾斜機構と、
傾斜機構の上にXY水平移動機構とを備えており、試料
を水平移動機構の上にセットするようにしている。(Prior Art) In scanning electron microscopes and the like, a sample is not only moved horizontally in the X and Y directions, but also observed while being tilted. Therefore, the sample stage has a tilting mechanism and
An XY horizontal movement mechanism is provided above the tilting mechanism, and the sample is set on the horizontal movement mechanism.
(発明が解決しようとする課題)
第2図は、試料の傾斜と観察位置との関係を説明するた
めの図であり、Aが試料ステージの傾斜回転軸であり、
Sは傾斜角が零のときの試料面である。今、回転軸Aか
ら距離す離れた試料面位置pに光軸Oがあり、p部分の
観察を行い、その後、試料ステージを角度θ回転させる
と、試料面Sは、図中点線で示すS′となり、観察位置
pはp′に示すように光軸O(今までの観察位置)から
ΔX離れてしまい、視野の逃げが生じることになる。(Problem to be Solved by the Invention) FIG. 2 is a diagram for explaining the relationship between the tilt of the sample and the observation position, where A is the tilt rotation axis of the sample stage,
S is the sample surface when the tilt angle is zero. Now, the optical axis O is at a sample surface position p which is a distance away from the rotation axis A, and when the part p is observed and the sample stage is then rotated by an angle θ, the sample surface S becomes S indicated by the dotted line in the figure. ', the observation position p is separated by ΔX from the optical axis O (the previous observation position) as shown by p', and the field of view is missed.
従って、ステージの傾斜を行った後に、XY水平移動機
構を用いてp′が光軸直下にくるように制御(ユーセン
トリック制御)しなければならない。Therefore, after tilting the stage, it is necessary to control (eucentric control) using an XY horizontal movement mechanism so that p' is located directly below the optical axis.
以下、この制御方法について述べる。This control method will be described below.
まず、走査電子顕微鏡の観察画面を人間が見ながら、傾
斜角θのときの像の移動量ΔXを求める。First, while viewing the observation screen of a scanning electron microscope, the amount of image movement ΔX when the tilt angle is θ is determined.
ここで、像の移動量ΔXは、zlを傾斜軸Aに対する試
料面の高さとすると、次の関係がある。Here, the image movement amount ΔX has the following relationship, where zl is the height of the sample surface with respect to the tilt axis A.
ΔXI!z1 tanθ 従って、 2、−Δx/lanθ となり、ΔXとθとから、試料面の高さが求められる。ΔXI! z1 tanθ Therefore, 2, -Δx/lanθ The height of the sample surface can be found from ΔX and θ.
その後、試料を任意の角度回転させた場合には、そのと
きの角度と既に求められた試料面の高さ2.とから、コ
ンピュータによって像の移動量ΔXを求め、このΔXに
よって水平移動機構を自動的に制御し、傾斜前の視野を
光軸直下に移動させるようにしている。After that, when the sample is rotated by an arbitrary angle, the angle at that time and the already determined height of the sample surface are 2. From this, the amount of movement ΔX of the image is determined by a computer, and the horizontal movement mechanism is automatically controlled based on this ΔX, so that the field of view before tilting is moved directly below the optical axis.
しかしながら、上記した制御方法は、試料面の高さzl
を求めるステップか自動化されておらず、人間の像観察
によって行わねばならないので、大変不便である。However, the above-mentioned control method is limited to the height zl of the sample surface.
This step is not automated and must be performed by human observation of the image, which is very inconvenient.
本発明は、上述した点に鑑みてなされたもので、その目
的は、自動的にユーセントリック制御を行うことができ
る荷電粒子ビーム装置における試料ステージの制御方法
を実現するにある。The present invention has been made in view of the above-mentioned points, and its purpose is to realize a method for controlling a sample stage in a charged particle beam apparatus that can automatically perform eucentric control.
(課題を解決するための手段)
本発明に基づく荷電粒子ビーム装置における試料ステー
ジの制御方法は、傾斜機構の上に試料をX、Y両方向に
水平移動させる機構を備えたステージの制御方法であっ
て、試料の特徴部分を傾斜機構による傾斜軸上に移動さ
せ、傾斜機構による試料の傾斜角が零のとき、該特徴部
分を直線状に走査し、この走査に基づく検出信号を記憶
し、傾斜機構による試料の傾斜角を一定角度に設定した
後、該特徴部分を荷電粒♀ビームによって直線状に走査
し、この走査に基づく検出信号を記憶し、記憶された2
種の検出信号の位相差を求め、この位相差に基づいて試
料面の傾斜軸からの高さ(21)を求め、その後、光軸
から任意の距離(b)離れた位置の観察に際して、試料
を所定角度(θ)傾斜させたとき、高さz1、距離b1
角度θに基づき、自動的に試料の観察点を光軸に移動さ
せるようにしたことを特徴としている。(Means for Solving the Problems) A method for controlling a sample stage in a charged particle beam apparatus based on the present invention is a method for controlling a stage that is provided with a mechanism for horizontally moving a sample in both X and Y directions on a tilting mechanism. Then, the characteristic part of the sample is moved onto the tilt axis by the tilt mechanism, and when the tilt angle of the sample by the tilt mechanism is zero, the characteristic part is scanned in a straight line, the detection signal based on this scanning is stored, and the tilt After setting the inclination angle of the sample by the mechanism to a constant angle, the characteristic part is scanned linearly by the charged particle beam, and the detection signal based on this scanning is stored, and the memorized 2
Determine the phase difference of the species detection signal, determine the height (21) of the sample surface from the tilt axis based on this phase difference, and then, when observing a position at an arbitrary distance (b) away from the optical axis, When tilted by a predetermined angle (θ), height z1, distance b1
It is characterized in that the observation point of the sample is automatically moved to the optical axis based on the angle θ.
(作用)
試料ステージの傾斜軸と光軸とを合せ、試料上のマーク
などの特徴部分を光軸下に配置し、傾斜角が零のとき、
特徴部分を荷電粒子ビームによって直線状に走査して検
出信号を得、次に、試料を傾斜させて同じ特徴部分を荷
電粒子ビームによって直線状に走査して検出信号を得、
2種の検出信号の位相差から試料面の高さを求め、その
後、任意の試料面の傾斜観察に際しては、この求めた高
さ、傾斜角度、観察部の光軸からの距離によって試料の
水平移動を自動的に行う。(Function) Align the tilt axis of the sample stage with the optical axis, place the characteristic part such as a mark on the sample under the optical axis, and when the tilt angle is zero,
A characteristic portion is scanned linearly by a charged particle beam to obtain a detection signal, and then the same characteristic portion is scanned linearly by a charged particle beam with the sample tilted to obtain a detection signal;
The height of the sample surface is determined from the phase difference between the two types of detection signals, and then, when observing an arbitrary sample surface at an angle, the horizontal position of the sample is determined using the determined height, angle of inclination, and distance from the optical axis of the observation section. Move automatically.
(実施例)
以下、第1図を参照して本発明の実施例を詳細に説明す
る。第1図は本発明に基づく試料ステージ制御方法を実
施する走査電子顕微鏡の一例を示しており、電子ビーム
EBは、偏向器1によって偏向される。2は試料であり
、Z方向の垂直移動機構の上に傾斜機構があり、傾斜機
構の上にXY水平移動機構が備えられている試料ステー
ジ3上に載せられている。偏向器1へは、コンピュータ
4によって制御される偏向器制御ユニット5から偏向信
号が供給され、それに基づいて電子ビームEBは試料2
上で走査される。試料2への電子ビームの照射によって
発生した、例えば、反射電子は、検出器6によって検出
され、その検出信号は増幅器7によって増幅され、AD
変換器8によってディジタル信号に変換された後、第1
の波形メモリ9に供給されて記憶される。第1の波形メ
モリ9には、偏向器制御ユニット5から参照信号が供給
されている。波形メモリ9に記憶された信号は、コンピ
ュータ4の指令により、第2の波形メモリ10か第3の
波形メモリ11のいずれかに供給されて記憶される。第
2と第3の波形メモリ10.11に記憶された信号は、
位相差検出ユニ、yト12に供給され、両信号の位相差
が求められる。(Example) Hereinafter, an example of the present invention will be described in detail with reference to FIG. FIG. 1 shows an example of a scanning electron microscope implementing the sample stage control method according to the present invention, in which an electron beam EB is deflected by a deflector 1. Reference numeral 2 denotes a sample, which is placed on a sample stage 3, which has a tilting mechanism above a Z-direction vertical movement mechanism, and an XY horizontal movement mechanism above the tilting mechanism. A deflection signal is supplied to the deflector 1 from a deflector control unit 5 controlled by a computer 4, and based on the deflection signal, the electron beam EB is directed to the sample 2.
scanned above. For example, reflected electrons generated by irradiating the sample 2 with an electron beam are detected by the detector 6, and the detection signal is amplified by the amplifier 7, and the AD
After being converted into a digital signal by the converter 8, the first
is supplied to the waveform memory 9 and stored therein. A reference signal is supplied to the first waveform memory 9 from the deflector control unit 5 . The signals stored in the waveform memory 9 are supplied to either the second waveform memory 10 or the third waveform memory 11 and stored therein according to instructions from the computer 4. The signals stored in the second and third waveform memories 10.11 are
The signal is supplied to a phase difference detection unit 12, and the phase difference between both signals is determined.
この位相差に応じた信号は、コンピュータ4に供給され
る。なお、コンピュータ4は、試料ステージ3の制御ユ
ニット13をも制御している。A signal corresponding to this phase difference is supplied to the computer 4. Note that the computer 4 also controls the control unit 13 of the sample stage 3.
上述した構成で、まず、試料2の特徴部分、例えばマー
クをステージの中心(傾斜軸A上)に移動させ、マーク
を横切って電子ビームを直線状に走査する。このとき、
試料の傾斜角は零にされている。この走査に伴って得ら
れた反射電子は、検出器6によって検出され、AD変換
器8によってディジタル信号に変換されて第1の波形メ
モリ9に供給され、電子ビームの走査位置に応じて記憶
される。この直線状の電子ビームの走査は、検出信号の
SN比を高めるために多数回行われ、各走査位置に応じ
た検出信号は、第1の波形メモリ9で積算される。積算
された後、第1の波形メモリ9に記憶された信号は、第
2の波形メモリ10に転送されて記憶される。With the above-described configuration, first, a characteristic portion of the sample 2, such as a mark, is moved to the center of the stage (on the tilt axis A), and an electron beam is scanned linearly across the mark. At this time,
The tilt angle of the sample was set to zero. The reflected electrons obtained along with this scanning are detected by the detector 6, converted into digital signals by the AD converter 8, and supplied to the first waveform memory 9, where they are stored according to the scanning position of the electron beam. Ru. This linear electron beam scanning is performed many times to increase the S/N ratio of the detection signal, and the detection signal corresponding to each scanning position is integrated in the first waveform memory 9. After being integrated, the signal stored in the first waveform memory 9 is transferred to and stored in the second waveform memory 10.
次に、コンピュータ4からの指令によってステージ制御
ユニット13を制御し、ステージ3の傾斜機構を駆動し
、試料を角度θ傾ける。この段階で、再びマークを横切
って電子ビームを直線状に走査し、走査に伴って検出さ
れた信号をAD変換器8を介して第1の波形メモリ9に
供給して記憶する。この第1の波形メモリ9では、検出
信号を積算し、所定回数の電子ビームの像線状の走査か
終了した後、第1の波形メモリ9に記憶された信号は、
第3の波形メモリ12に転送されて記憶される。次に、
上述した第2と第3の波形メモリ10.11に記憶され
た信号の位相差が位相差検出ユニット12によって求め
られる。ここで、Xを電子ビームの走査位置とし、第2
の波形メモリ11の波形データをf(x)、第3の波形
メモリ11の波形データをg (x)とする。この2種
の波形の自己相関R(i)を位相差検出ユニット12に
よって求めるが、R(i)は、次のように表すことがで
きる。Next, the stage control unit 13 is controlled by a command from the computer 4, and the tilting mechanism of the stage 3 is driven to tilt the sample at an angle θ. At this stage, the electron beam is linearly scanned across the mark again, and the signals detected during the scanning are supplied to the first waveform memory 9 via the AD converter 8 and stored therein. In this first waveform memory 9, the detection signals are integrated, and after a predetermined number of image-line scans of the electron beam are completed, the signals stored in the first waveform memory 9 are as follows.
It is transferred to and stored in the third waveform memory 12. next,
The phase difference between the signals stored in the second and third waveform memories 10.11 described above is determined by the phase difference detection unit 12. Here, X is the scanning position of the electron beam, and the second
The waveform data in the third waveform memory 11 is f(x), and the waveform data in the third waveform memory 11 is g(x). The autocorrelation R(i) of these two types of waveforms is determined by the phase difference detection unit 12, and R(i) can be expressed as follows.
R(f) −Σf (j) ・g (i+j)
・・・ (1)
位相差検出ユニット12は、上記(1)式に示す演算、
すなわち、f (x)とg (x)のアドレスをiだけ
ずらして互いに乗算し、その和を計算する。そして、m
をメモリアドレスの最大値とすると、
i−−(m−n) ・・・、 0.・・・、(m−n
)の範纏でR(i)が最大となったときのiの値(ΔX
)が求められる。すなわち、このiの値が、試料面の傾
斜角が00と傾斜角がθのときの検出信号の波形の位相
差(X方向の像のずれ量)となる。R(f) −Σf (j) ・g (i+j)
... (1) The phase difference detection unit 12 performs the calculation shown in the above equation (1),
That is, the addresses of f (x) and g (x) are shifted by i, multiplied together, and the sum is calculated. And m
Letting be the maximum value of memory address, i--(m-n)..., 0. ..., (m-n
) is the value of i (ΔX
) is required. That is, the value of i becomes the phase difference (image shift amount in the X direction) of the detection signal waveform when the tilt angle of the sample surface is 00 and when the tilt angle is θ.
ここで、位相差ΔXは、第2図から次のように表すこと
ができる。Here, the phase difference ΔX can be expressed as follows from FIG.
Δxwb+z+ tanθ−b/cosθ・・・
(2)
上式で、未知変数はzlとbであるが、上記位相差を求
めた時、マークをステージの中心(傾斜軸上)に配置し
たため、b−oとなる。従って、(2)式は、
Δx −z 、 tanθ
となり、
zl−Δx/lanθ
が導かれ、試料面の高さzlが計算によって求めること
ができるようになる。Δxwb+z+ tanθ−b/cosθ...
(2) In the above equation, the unknown variables are zl and b, but when the phase difference is calculated, since the mark is placed at the center of the stage (on the tilt axis), it becomes b-o. Therefore, Equation (2) becomes Δx −z , tanθ, and zl−Δx/lanθ is derived, and the height zl of the sample surface can be determined by calculation.
上記したステップで、試料面の高さzlが自動的に求め
られ、その後、任意の部分(傾斜軸から距離す離れた位
置)の試料部分を傾斜して観察する場合、傾斜が零の場
合からのX方向の観察位置の移動量は、上記(2)式に
よって求められ、その移動量分X方向に試料が移動させ
られる。この結果、光軸直下に観察部分が位置させ、ユ
ーセントリック制御を行うことができ、試料を傾斜させ
ても像の逃げを防止することができる。また、Z方向の
高さのずれ量Δ2は、次式によって求められる。In the above step, the height zl of the sample surface is automatically determined. After that, when observing a sample part at an arbitrary part (a distance from the tilt axis) by tilting it, the height zl of the sample surface is automatically determined. The amount of movement of the observation position in the X direction is determined by the above equation (2), and the sample is moved in the X direction by the amount of movement. As a result, the observation part is located directly below the optical axis, eucentric control can be performed, and even if the sample is tilted, the image can be prevented from escaping. Further, the height deviation amount Δ2 in the Z direction is determined by the following equation.
Δz−b”tanθ+Zr z+/cosθこの求
めたΔ2の値によってZ方向にステージを駆動し、傾斜
前と傾斜後の試料を同一高さで観察を行うことができる
。Δz−b” tan θ+Zr z+/cos θ The stage is driven in the Z direction according to the value of Δ2 thus obtained, and the sample before and after tilting can be observed at the same height.
以上本発明の詳細な説明したか、本発明はこの実施例に
限定されない。例えば、反射電子を検出するようにした
が2次電子を検出するようにしても良い。また、走査電
子顕微鏡を例に説明したが、イオンビーム装置などにも
本発明を適用することができる。更に、試料面の高さを
求めるときにマークを走査するようにしたが、マーク以
外の試料上の特徴点を用いても良い。Although the present invention has been described in detail above, the present invention is not limited to this embodiment. For example, although reflected electrons are detected, secondary electrons may also be detected. Furthermore, although the scanning electron microscope has been described as an example, the present invention can also be applied to ion beam devices and the like. Furthermore, although the mark is scanned when determining the height of the sample surface, feature points on the sample other than the marks may be used.
(発明の効果)
以上、詳細に説明したように、本発明では、試料ステー
ジの傾斜軸と光軸とを合せ、試料上のマークなどの特徴
部分を光軸下に配置し、傾斜角か零のとき、特徴部分を
荷電粒子ビームによって直線状に走査として検出信号を
得、次に、試料を傾斜させて同じ特徴部分を荷電粒子ビ
ームによって直線状に走査して検出信号を得、2種の検
出信号の位相差から試料面の高さを求め、その後、任意
の試料面の傾斜観察に際しては、この求めた高さ、傾斜
角度、観察部の光軸からの距離によって試料の水平移動
を自動的に行うようにしたので、試料ステージのユーセ
ントリック制御を全て自動的に行うことができる。(Effects of the Invention) As described above in detail, in the present invention, the tilt axis of the sample stage and the optical axis are aligned, the characteristic parts such as marks on the sample are placed under the optical axis, and the tilt angle is adjusted to zero. At this time, a detection signal is obtained by scanning a characteristic part in a straight line with a charged particle beam. Next, the sample is tilted and the same characteristic part is scanned in a straight line with a charged particle beam to obtain a detection signal. The height of the sample surface is determined from the phase difference of the detection signal, and then when performing tilted observation of any sample surface, the horizontal movement of the sample is automatically performed based on the determined height, tilt angle, and distance from the optical axis of the observation section. Therefore, all eucentric control of the sample stage can be performed automatically.
第1図は、本発明に基づくステージ制御方法を実施する
ための走査電子顕微鏡を示す図、第2図は、試料の傾斜
と観察位置との関係を説明するための図である。
1・・・偏向器 2・・・試料3・・・試料
ステージ 4・・・コンピュータ5・・・偏向器制
御ユニット
6・・・検出器 7・・・増幅器8・・・A
D変換器
9.10.11・・・波形メモリ
12・・・位相差検出ユニット
13・・・ステージ制御ユニットFIG. 1 is a diagram showing a scanning electron microscope for implementing the stage control method based on the present invention, and FIG. 2 is a diagram for explaining the relationship between the inclination of the sample and the observation position. 1...Deflector 2...Sample 3...Sample stage 4...Computer 5...Deflector control unit 6...Detector 7...Amplifier 8...A
D converter 9.10.11... Waveform memory 12... Phase difference detection unit 13... Stage control unit
Claims (1)
構を備えた荷電粒子ビーム装置における試料ステージの
制御方法であって、試料の特徴部分を傾斜機構による傾
斜軸上に移動させ、傾斜機構による試料の傾斜角が零の
とき、該特徴部分を直線状に走査し、この走査に基づく
検出信号を記憶し、傾斜機構による試料の傾斜角を一定
角度に設定した後、該特徴部分を荷電粒子ビームによっ
て直線状に走査し、この走査に基づく検出信号を記憶し
、記憶された2種の検出信号の位相差を求め、この位相
差に基づいて試料面の傾斜軸からの高さ(z_1)を求
め、その後、光軸から任意の距離(b)離れた位置の観
察に際して、試料を所定角度(θ)傾斜させたとき、高
さz_1、距離b、角度θに基づき、自動的に試料の観
察点を光軸に移動させるようにした荷電粒子ビーム装置
における試料ステージの制御方法。A method for controlling a sample stage in a charged particle beam apparatus equipped with a mechanism for horizontally moving a sample in both X and Y directions on a tilting mechanism, the method comprising: moving a characteristic part of the sample onto a tilt axis by the tilting mechanism; When the tilt angle of the sample is zero, the characteristic part is scanned in a straight line, the detection signal based on this scanning is stored, and after the tilt angle of the sample by the tilt mechanism is set to a constant angle, the characteristic part is charged. The particle beam scans in a straight line, the detection signal based on this scanning is stored, the phase difference between the two stored detection signals is determined, and the height (z_1) of the sample surface from the tilt axis is determined based on this phase difference. ), and then when observing a position at an arbitrary distance (b) from the optical axis and tilting the sample at a predetermined angle (θ), the sample is automatically adjusted based on the height z_1, distance b, and angle θ. A method of controlling a sample stage in a charged particle beam device in which the observation point of the sample is moved along the optical axis.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2102375A JPH042032A (en) | 1990-04-18 | 1990-04-18 | Specimen stage control method for charged particle beam device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2102375A JPH042032A (en) | 1990-04-18 | 1990-04-18 | Specimen stage control method for charged particle beam device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH042032A true JPH042032A (en) | 1992-01-07 |
Family
ID=14325716
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2102375A Pending JPH042032A (en) | 1990-04-18 | 1990-04-18 | Specimen stage control method for charged particle beam device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH042032A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007192741A (en) * | 2006-01-20 | 2007-08-02 | Sharp Corp | Elemental analysis method and elemental analysis apparatus |
-
1990
- 1990-04-18 JP JP2102375A patent/JPH042032A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007192741A (en) * | 2006-01-20 | 2007-08-02 | Sharp Corp | Elemental analysis method and elemental analysis apparatus |
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