JPH042116A - Method and device for detecting position and alignment device - Google Patents

Method and device for detecting position and alignment device

Info

Publication number
JPH042116A
JPH042116A JP2101571A JP10157190A JPH042116A JP H042116 A JPH042116 A JP H042116A JP 2101571 A JP2101571 A JP 2101571A JP 10157190 A JP10157190 A JP 10157190A JP H042116 A JPH042116 A JP H042116A
Authority
JP
Japan
Prior art keywords
light
diffraction
diffracted light
order
diffracted
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2101571A
Other languages
Japanese (ja)
Other versions
JPH0635924B2 (en
Inventor
Hiromasa Shibata
浩匡 柴田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soltec Co Ltd
Original Assignee
Soltec Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soltec Co Ltd filed Critical Soltec Co Ltd
Priority to JP2101571A priority Critical patent/JPH0635924B2/en
Priority to US07/688,115 priority patent/US5182610A/en
Publication of JPH042116A publication Critical patent/JPH042116A/en
Publication of JPH0635924B2 publication Critical patent/JPH0635924B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7049Technique, e.g. interferometric

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optical Transform (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Length Measuring Devices By Optical Means (AREA)

Abstract

PURPOSE:To spread the range of detection as detection resolving power required in a position transducer utilizing optical heterodyne interference light is left as it is kept by separating each diffracted light from first and second bodies resulting from the + or - primary irradiation direction and each diffracted light from the first and second bodies resulting from the + or - quaternary irradiation direction respectively and detecting phase difference among beat signals by each diffracted light. CONSTITUTION:Since the planes of polarization are displaced at 900 by half wave plates 50, 51 on their midways in - primary diffracted light and - quaternary diffracted light reflected by mirrors 31, 33, both diffracted light mutually interfere with + primary diffracted light and + quaternary diffracted light respectively by polarizing beam splitters 52, 53, thus acquiring optical heterodyne interference light. The phase difference of beat signals resulting from + or - primary diffracted light and the phase difference of beat signals resulting from + or - quaternary diffracted light are detected in a signal processing control circuit 7, thus measuring the quantities of the relative positional displacement of a mask A and a wafer B within the range of the half pitches of a diffraction grating. The resolving power of + or - quaternary diffracted light is increased by quadruple to that of + or - primary diffracted light.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 この発明は、半導体超微細加工や超精密測定等において
光ヘテロダイン干渉光を利用する位置検出方法及びその
装置、更にその位置検出構成を用いて2つの物体の超精
密位置合せを行なう位置合せ装置に関する。
[Detailed Description of the Invention] [Industrial Application Field] The present invention provides a position detection method and apparatus using optical heterodyne interference light in semiconductor ultrafine processing, ultraprecision measurement, etc., and a position detection configuration using the same. The present invention relates to an alignment device that performs ultra-precise alignment of two objects.

〔従来の技術〕[Conventional technology]

シンクロトロン放射光りソグラフィ用アライナやフォト
ステッパ等の精密位置検出技術では、例えば特開昭62
−261003号等のように。
For precision position detection technology such as synchrotron radiation lithography aligners and photosteppers, for example, JP-A-62
- Like No. 261003, etc.

光ヘテロダイン位置検出方式が試作機レベルで実用化さ
れ始めている。
Optical heterodyne position detection methods are beginning to be put into practical use at the prototype level.

第7図は上記の従来技術に示された光ヘテロダイン干渉
回折光を利用する位置検出手段の概要が示されており、
まずその装置構成としては、第1の物体となるマスクA
及び第2の物体となるウェハB上に形成された各回折格
子(la) (lb)と、直交直線偏光のわずかに異な
る2周波数の光を発生させるレーザ装置からなる光源(
2)と、後述する偏光ビームスプリッタ(40a)で分
離した光の方向を調整して前記回折格子(la) (l
b)に向けて±n次方向(nは正の整数)から照射する
ミラー(42a) (43a)からなる入射角調整手段
と、光源(2)からくる2偏光を分離して前記ミラー(
42a) (43a)方向に夫々分岐する偏光ビームス
プリッタ(40a)及び前記回折格子(la) (lb
)から垂直方向に取り出される各回折光を干渉せしめて
光ヘテロダイン干渉光とする偏光板(56) (57)
からなる光干渉手段と、この偏光板(56) (57)
により光ヘテロダイン干渉せしめた干渉回折光を検出し
ヒート信号を生成するディテクタ(60a)(62a)
からなる検出手段と、このディテクタ(60a)(62
a)の夫々から生成されたヒート信号の位相ずれを検出
して位相計に表示する信号処理手段(70)とを有して
いる。
FIG. 7 shows an outline of a position detection means using optical heterodyne interference diffraction light shown in the above-mentioned prior art.
First, the device configuration consists of a mask A, which is the first object.
and a light source consisting of each diffraction grating (la) (lb) formed on the wafer B, which is the second object, and a laser device that generates orthogonal linearly polarized light of two slightly different frequencies.
2) and the direction of the light separated by a polarizing beam splitter (40a) to be described later is adjusted to form the diffraction grating (la) (l
b) incident angle adjustment means consisting of mirrors (42a) (43a) that emit light from the ±n-th direction (n is a positive integer);
42a) (43a) A polarizing beam splitter (40a) and the diffraction grating (la) (lb
) Polarizing plate (56) (57) that interferes each diffracted light taken out in the vertical direction to produce optical heterodyne interference light.
and the polarizing plate (56) (57).
Detectors (60a) (62a) that detect interference diffraction light caused by optical heterodyne interference and generate heat signals.
and the detector (60a) (62
It has a signal processing means (70) that detects the phase shift of the heat signal generated from each of the above and displays it on a phase meter.

そして前記光源(2)から発せられる光は直交直線偏光
2周波数酸分子i、f2を有しており、偏光ビームスプ
リッタ(40a)でf工の周波数成分の光とf2の周波
数成分の光に分離され、夫々ミラー(42a) (43
a)によって回折格子(la) (lb)に対して±n
次方向(例えば±1次方向)から入射する。回折格子(
la) (lb)から垂直方向に回折された光f2、f
2(図中破線で示す)は、ミラー(38)及びプリズム
ミラー(39)を通って各偏光板(56) (57)で
可干渉となり、ディテクタ(60a)(62a)で夫々
ヒート信号が検出される。各ディテクタ(60a) (
62a)で検出されたヒート信号間では、回折格子(l
a) (lb)の位置ずれ量に比例した位相差を生じる
。この位相差を信号処理手段(70)の位相計で検出す
ることにより、2つの回折格子(la) (lb)間の
相対的位置ずれ量を知ることになる。
The light emitted from the light source (2) has orthogonal linearly polarized two-frequency acid molecules i and f2, and is separated by a polarizing beam splitter (40a) into light with a frequency component of f and light with a frequency component of f2. mirrors (42a) (43
a) for the diffraction grating (la) (lb) ±n
The light is incident from the next direction (for example, the ±1st order direction). Diffraction grating(
la) Light f2, f diffracted in the vertical direction from (lb)
2 (indicated by a broken line in the figure) passes through the mirror (38) and prism mirror (39) and becomes coherent with each polarizing plate (56) (57), and the heat signal is detected by the detector (60a) (62a), respectively. be done. Each detector (60a) (
Between the heat signals detected by the diffraction grating (l
a) A phase difference proportional to the amount of positional deviation (lb) is generated. By detecting this phase difference with the phase meter of the signal processing means (70), the amount of relative positional deviation between the two diffraction gratings (la) (lb) can be known.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

以上の光ヘテロダイン位置検出方式では、各回折格子(
la) (lb)に対する光の±n次の照射方向につき
次数の絶対値nが小さい程その信号検出範囲が広がり、
その間の関係は、 信号検呂範囲二回折格子(la)(lb)ピッチP/2
nであって、例えばnが1の場合、上記ピッチPの17
2がその検出範囲となる。但し、検出分解能については
全くこの逆の関係が成り立ち、格子ピッチPを小さくし
ない限り、該次数の絶対値nがホさい程低くなる。その
ため検出分解能を上げようとして各回折格子(la) 
(lb)に対する光の照射角度を変え、前記次数の絶対
値nを大きくすると、信号検出範囲は上記式より極端に
狭くなる(尚、格子ピッチPを小さくして検出分解能を
上げた場合でも上記式より同様な結果となる)。
In the above optical heterodyne position detection method, each diffraction grating (
la) Regarding the ±n-order irradiation direction of light with respect to (lb), the smaller the absolute value n of the order, the wider the signal detection range,
The relationship between them is: Signal check range two diffraction gratings (la) (lb) pitch P/2
n, and for example, when n is 1, 17 of the above pitch P
2 is its detection range. However, the exact opposite relationship holds true for the detection resolution, and unless the grating pitch P is made small, the higher the absolute value n of the order, the lower it becomes. Therefore, in order to increase the detection resolution, each diffraction grating (la)
If the irradiation angle of light with respect to (lb) is changed and the absolute value n of the order is increased, the signal detection range will become extremely narrower than the above formula (note that even if the grating pitch P is reduced to increase the detection resolution, Similar results are obtained from the formula).

従って転写線幅がサブハーフミクロンオーダになるシン
クロトロン放射光りソグラフィ用アライナにおいてこの
ような光ヘテロダイン位置検出方式を用いてより高い位
置検出分解能を得ようとすると、信号検出範囲が非常に
狭いものとなり、実用化が困難であった。
Therefore, if an attempt is made to obtain higher position detection resolution using such an optical heterodyne position detection method in a synchrotron radiation lithography aligner where the transfer line width is on the order of a sub-half micron, the signal detection range will become extremely narrow. , it was difficult to put it into practical use.

本発明は従来技術の以上のような問題に鑑み創案された
もので、必要な検出分解能を維持したまま検出範囲を拡
大できる位置検出方法及びその装置と、その位置検出構
成を用いた位置合せ装置を提供せんとするものである。
The present invention was devised in view of the above-mentioned problems of the prior art, and provides a position detection method and device capable of expanding the detection range while maintaining the necessary detection resolution, and an alignment device using the position detection configuration. We aim to provide the following.

〔問題点を解決するための手段〕[Means for solving problems]

そのため本発明の位置検出方法は、マスク。 Therefore, the position detection method of the present invention uses a mask.

ウェハ等の第1の物体及び第2の物体に設けられた各回
折格子に照射されるコヒーレント光の±n次の照射方向
につき次数の絶対値nが異なる複数の照射方向からこれ
らの各回折格子に夫々該コヒーレント光を照射し、これ
らの照射によって第1及び第2の回折格子から夫々垂直
方向に生じる回折光を検出し、且つ前記回折時点で又は
回折光路途中で2周波成分を干渉せしめて光ヘテロダイ
ン干渉回折光とすることでこれを基に各ヒート信号を生
成し、±n次方向からのコヒーレント光の照射の結果垂
直方向に取り出される回折光のうち前記照射方向次数の
絶対値nが等しい干渉回折光から最終的に生成されるヒ
ート信号同士の位相差を夫々測定してこれらの各位相差
に基づいて前記第1及び第2の物体の変位置(相対的位
置ずれ量のほか、他に基準ヒート信号を生成せしめてこ
れら2つの物体の夫々の変位置を知る絶対的位置ずれ量
でも良い)を検出する。
Each of the diffraction gratings provided on a first object such as a wafer and a second object such as a wafer is irradiated with each diffraction grating from a plurality of irradiation directions in which the absolute value n of the order is different for each ±n-order irradiation direction of coherent light. irradiating each with the coherent light, detecting the diffracted light generated in the vertical direction from the first and second diffraction gratings by these irradiations, and interfering the two frequency components at the time of the diffraction or in the middle of the diffraction optical path. Each heat signal is generated based on the optical heterodyne interference diffracted light, and the absolute value n of the order in the irradiation direction of the diffracted light extracted in the vertical direction as a result of irradiation with coherent light from the ±n-order direction is The phase difference between the heat signals finally generated from the same interference diffraction light is measured, and the displacement (in addition to the amount of relative positional deviation) of the first and second objects is calculated based on each phase difference. A reference heat signal is generated to detect the absolute displacement amount (which may be an absolute displacement amount to know the displacement of each of these two objects).

例えば、第1及び第2の物体に設けられる各回折格子の
ピッチPをある程度大きく採り、更にこれらの各回折格
子に対し、夫々上1次の方向と±4次の方向から直交直
線偏光のわずかに異なる2周波数酸分子2、f2を有す
る光を照射して、±1次照射方向由来の第1及び第2の
物体からの各回折光と±4次照射方向由来の第1及び第
2の物体からの各回折光を夫々分離して検出し、これら
の回折光の2周波成分子1、f2を干渉せしめて各ヒー
ト信号を生成せしめる。
For example, the pitch P of each of the diffraction gratings provided on the first and second objects is set to be large to a certain extent, and a small amount of orthogonal linearly polarized light is applied to each of these diffraction gratings from the upper first-order direction and the ±4th-order direction, respectively. is irradiated with light having two different frequency acid molecules 2, f2, and each diffracted light from the first and second objects originating from the ±1st order irradiation direction and the first and second diffracted light originating from the ±4th order irradiation direction are obtained. Each of the diffracted lights from the object is separated and detected, and the two-frequency components 1 and f2 of these diffracted lights are caused to interfere with each other to generate each heat signal.

そして±1次照射方向由来の第1及び第2の物体からの
各回折光によるヒート信号間の位相差を検出すれば、そ
の信号波形は上記回折格子ピッチPの172を周期とす
る線形信号となる。
Then, by detecting the phase difference between the heat signals caused by the respective diffracted lights from the first and second objects originating from the ±1st order irradiation direction, the signal waveform becomes a linear signal with a period of 172 of the diffraction grating pitch P. Become.

これに灯して±4次照射方向由来の第1及び第2の物体
からの各回折光によるヒート信号間の位相差を検出すれ
ば、上記回折格子ピッチPの178を周期とする線形信
号となる。このように後者の方は信号検出範囲が前者の
174となるが、信号検出分解能についてはその4倍と
なる。従って2つの位相差を同時に求めれば、格子ピッ
チPの172の範囲内で変位置が測定でき、しかも±4
次照射方向由来の回折光の持つ分解能を同時に達成でき
ることになる。
In light of this, if the phase difference between the heat signals due to the respective diffracted lights from the first and second objects derived from the ±4th order irradiation direction is detected, a linear signal with a period of 178 of the above-mentioned diffraction grating pitch P can be detected. Become. In this way, the signal detection range of the latter is 174, but the signal detection resolution is four times that of the former. Therefore, if the two phase differences are determined simultaneously, the displacement position can be measured within the range of 172 of the grating pitch P, and moreover, ±4
This means that the resolution of the diffracted light from the next irradiation direction can be achieved at the same time.

更に第1及び第2の物体の変位置を検出する別の方法と
しては、光源から照射され第1及び第2の回折格子から
夫々生じる回折光のうち±n次回折光を検出し、回折光
路途中で2周波成分を干渉せしめて光ヘテロダイン干渉
回折光とすることでこれを基にヒート信号を夫々生成し
、これらのヒート信号の位相差を測定することでその変
位置を検出することもできるが、本発明はこのような構
成に対しても適用できる。この場合は各回折格子から±
n次回折方向で取り出される回折光につき、その回折次
数の絶対値nが異なる複数の回折方向でこれを取り出し
て更に光ヘテロダイン干渉せしめてその干渉光を検出す
る。この検出により各ヒート信号を生成せしめて±1次
回折光の次数の絶対値nが等しいものから最終的に生成
されるヒート信号同士の位相差を夫々測定し、これらの
各位相差に基づいて第1及び第2の物体の変位置を検出
することになる。又、照射次数や回折次数の絶対値が3
つ以上の異なる値となる複数の照射方向から照射したり
、そのような複数の回折方向から回折光の取り出しを行
なって検出するようにしても良いことは言うまでもない
Furthermore, another method for detecting the displacement of the first and second objects is to detect the ±nth-order diffracted light of the diffracted light emitted from the light source and generated from the first and second diffraction gratings, and By interfering the two frequency components to produce optical heterodyne interference diffraction light, heat signals are generated based on this, and the displacement can be detected by measuring the phase difference between these heat signals. , the present invention can also be applied to such a configuration. In this case, ±
The diffracted light taken out in the n-th order diffraction direction is taken out in a plurality of diffraction directions having different absolute values n of the diffraction orders, and further subjected to optical heterodyne interference to detect the interference light. Through this detection, each heat signal is generated, and the phase difference between the finally generated heat signals is measured from those whose absolute values n of the orders of the ±1st-order diffracted lights are the same. Based on each of these phase differences, the first and the displacement position of the second object is detected. Also, the absolute value of the irradiation order and diffraction order is 3.
Needless to say, the light may be irradiated from a plurality of irradiation directions giving three or more different values, or the diffracted light may be extracted from such a plurality of diffraction directions for detection.

尚、上記本発明の構成中、光の干渉を行なわしめる手段
については、上述のような偏光ビームスプリッタと偏光
板を組合せて使用する方法もあるが、偏光ビームスプリ
ッタと1/2波長板を組合せて使ったり、又はビームス
プリッタ、1/2波長板及び偏光板を組合せて使うこと
も可能である。即ち、コヒーレント光の±n次方向から
の照射を行なう場合に、偏光ビームスプリッタで取り出
されたf1構成のみ又はビームスプリッタで取り出され
たf□及びf2の両成分を有する+0次光か同じく偏光
ビームスプリッタで取り出されたf2構成のみ又はビー
ムスプリッタで取り出されたf2及びflの両成分を有
する一n次光の一方の偏波面を1/2波長板で90°ず
らせて各回折格子に照射し、その回折の時点で光ヘテロ
ダイン干渉せしめることも可能である(f工、f2の両
成分を有する形で照射干渉がなされた後者の場合は、水
平方向又は垂直方向の干渉光の一方を更に偏光板でカッ
トし、残りの干渉光を検出することになる)し、コヒー
レント光を各回折格子に垂直に入射させ、そこから発生
する回折光のうち±n次の回折光を取り出した場合に+
n次回折光をは−n次回力先のうち、その一方を1/2
波長板で同様に処理し、±n次回折光を検出の時点前に
光ヘテロダイン干渉せしめるということもできる。
In the configuration of the present invention, as for the means for causing light interference, there is a method of using a combination of a polarizing beam splitter and a polarizing plate as described above, but it is also possible to use a combination of a polarizing beam splitter and a 1/2 wavelength plate. It is also possible to use a beam splitter, a half-wave plate, and a polarizing plate in combination. That is, when irradiating coherent light from the ±n-order direction, either only the f1 configuration extracted by the polarizing beam splitter, or the +0-order light having both f□ and f2 components extracted by the beam splitter, or the same polarized beam. One polarization plane of the first n-order light having only the f2 configuration extracted by the splitter or having both f2 and fl components extracted by the beam splitter is shifted by 90 degrees with a 1/2 wavelength plate and irradiated onto each diffraction grating, It is also possible to cause optical heterodyne interference at the time of diffraction (in the latter case, where irradiation interference is made in the form of having both f and f2 components, one of the horizontal or vertical interference light is further filtered through a polarizing plate). ), and if the coherent light is made perpendicularly incident on each diffraction grating and the ±n-order diffracted light is extracted from the diffracted light generated from it, +
The n-th order diffracted light is −1/2 of the n-th order output destination.
It is also possible to perform the same process using a wave plate and cause the ±n-order diffracted light to undergo optical heterodyne interference before the detection point.

次に第2及び第3発明の位置検出装置は上記第1発明の
位置検出方法の実施装置に係り、第2発明装置は回折光
を垂直方向で取り出す場合の構成、及び第3発明装置は
回折光を±n次回折方向で取り出す場合の構成である。
Next, the position detection devices of the second and third inventions relate to devices for implementing the position detection method of the first invention, the second invention device has a configuration for extracting diffracted light in the vertical direction, and the third invention device has a configuration for extracting diffracted light in the vertical direction. This is a configuration for extracting light in the ±nth order diffraction direction.

即ち、第2発明装置は、第1の物体に設けた第1の回折
格子と、第2の物体に設けた第2の回折格子と、わずか
に異なる2周波数のコヒーレント光を発生させる光源と
、該光源から照射されたコヒーレント光を前記第1及び
第2の回折格子の夫々に対して±n次の方向から入射さ
せる入射角調整手段と、各回折格子で照射光が回折する
時点で又は各回折格子から垂直方向に夫々取り出される
回折光の光路途中で2周波成分を干渉せしめて光ヘテロ
ダイン干渉光とする光干渉手段と、第1及び第2の回折
格子から垂直方向に夫々取り出され、且つ前記光干渉手
段によって光ヘテロダイン干渉光となった回折光を検出
してヒート信号を夫々生成する検出手段と、これらのヒ
ート信号からその位相差を測定してこの位相差に基づき
前記第1及び第2の物体の変位置を検出する信号処理手
段を有する位置検出装置において、前記入射角調整手段
による各回折格子に対する±n次方向からのコヒーレン
ト光の照射につき次数の絶対値nが異なる複数の方向か
らこれらの各回折格子に夫々照射できるようにすると共
に、前記検出手段についてもこれらの照射方向に対応さ
せて各光ヘテロダイン干渉回折光の検出及び各ヒート信
号の生成ができるようにし、更に前記信号処理手段につ
いても±n次方向からのコヒーレント光の照射の結果垂
直方向に取り出される回折光のうち前記照射方向次数の
絶対値nが等しい回折光から最終的に生成されるヒート
信号同士の位相差を夫々測定し、これらの各位相差に基
づき前記第1及び第2の物体の変位置を検出するように
したことを基本的特徴としている。又第3発明装置では
光の入射を垂直方向から行ない、回折光の取り出しを±
n次回折方向で行なう構成としているため、第2発明装
置のような入射角調整手段はなく、各回折格子から生じ
る回折光のうち±n次の回折光を取り出すミラーや偏光
ビームスプリッタ等の回折光取り出し手段を備え、且つ
光干渉手段については、回折光の取り出し光路途中で2
周波成分の干渉を行なわしめる装置構成としている。そ
してこれらの構成を前提構成として第3発明は回折光取
り出し手段により各回折格子から±n次回折方向で取り
出される回折光につき、その回折次数の絶対値nが異な
る複数の回折方向でこれを取り出すと共に、前記検出手
段についてもこれらの回折光取り出し方向に対応させて
各光ヘテロダイン干渉回折光の検出及び各ヒート信号の
生成ができるようにし、更に前記信号処理手段について
も、検出手段により検出された各回折光のうち次数の絶
対値nが等しいものから最終的に生成されるヒート信号
同士の位相差を夫々測定し、これらの各位相差に基づき
前記第1及び第2の物体の変位置を検出するようにして
いる。
That is, the second invention device includes a first diffraction grating provided on a first object, a second diffraction grating provided on a second object, and a light source that generates coherent light of two slightly different frequencies. an incident angle adjusting means for making the coherent light irradiated from the light source enter each of the first and second diffraction gratings from ±n-order directions; an optical interference means for making optical heterodyne interference light by interfering two frequency components in the optical path of the diffracted lights respectively taken out from the diffraction grating in the vertical direction; detection means for detecting the diffracted light that has become optical heterodyne interference light by the optical interference means and generating heat signals respectively; 2. In a position detection device having a signal processing means for detecting a displacement of an object, the incident angle adjusting means irradiates each diffraction grating with coherent light from ±n-order directions in a plurality of directions in which the absolute value n of the order is different. In addition, the detection means is adapted to correspond to these irradiation directions so as to be able to detect each optical heterodyne interference diffraction light and generate each heat signal. As for the processing means, the phase difference between the heat signals finally generated from the diffracted lights whose absolute values n of the orders in the irradiation direction are equal among the diffracted lights taken out in the vertical direction as a result of the irradiation of coherent light from ±n-order directions. The basic feature is that the displacement positions of the first and second objects are detected based on these phase differences. In addition, in the third invention device, the light is incident in the vertical direction, and the diffracted light is extracted from ±
Since the configuration is such that the diffraction is performed in the n-th order direction, there is no incident angle adjustment means as in the second invention device, and there is no need for a diffraction device such as a mirror or a polarizing beam splitter that takes out the ±n-order diffracted light among the diffracted lights generated from each diffraction grating. It is equipped with a light extraction means, and the light interference means has two
The device is configured to interfere with frequency components. Based on these configurations, the third invention extracts the diffracted light extracted from each diffraction grating in the ±n-order diffraction directions by the diffraction light extraction means in a plurality of diffraction directions in which the absolute value n of the diffraction order differs. At the same time, the detection means is also adapted to detect each optical heterodyne interference diffracted light and to generate each heat signal in correspondence with the direction in which these diffracted lights are taken out, and furthermore, the signal processing means is also arranged to correspond to the direction in which these diffracted lights are extracted. The phase difference between the heat signals finally generated from the diffracted lights having the same absolute value n of the orders is measured, and the displacement position of the first and second objects is detected based on these phase differences. I try to do that.

更に、第4及び第5発明の位置合せ装置は、第2及び第
3発明の位置検出装置を基に更にその装置構成を第1の
物体と第2の物体の位置合せができるような構成まで発
展改良させたものであり、それに固有な構成は、第1の
物体及び/又は第2の物体を動かす移動機構を備えると
共に、測定された位相差から第1の物体と第2の物体の
位置検出を行なう信号処理手段を単に備えるというので
はなく、その位相差に基づき前記移動機構に制御信号を
出力し、第1の物体及び/又は第2の物体を動かして位
置合せする信号処理制御手段を備えるものであり、その
他の構成は第2発明及び第3発明の構成と同じである。
Furthermore, the alignment devices of the fourth and fifth inventions are based on the position detection devices of the second and third inventions, and further improve the device configuration to a configuration that can align the first object and the second object. This is an improved and improved configuration that includes a moving mechanism for moving the first object and/or the second object, and determines the positions of the first object and the second object from the measured phase difference. A signal processing control means that does not simply include a signal processing means for performing detection, but outputs a control signal to the moving mechanism based on the phase difference, and moves and aligns the first object and/or the second object. The other configurations are the same as those of the second invention and the third invention.

〔実施例〕〔Example〕

以下本発明の具体的実施例につき添付図面を基に説明す
る。
Hereinafter, specific embodiments of the present invention will be described with reference to the accompanying drawings.

第1図は、シンクロトロン放射光露光装置において第1
の物体たるマスクAと第2の物体たるウェハBの位置合
せに用いられた第5発明に係る位置合せ装置構成の概略
を示すもので、図中マスク及びウェハの各移動機構につ
いては。
Figure 1 shows the first stage in a synchrotron radiation exposure apparatus.
This figure schematically shows the configuration of an alignment apparatus according to a fifth aspect of the present invention used to align a mask A, which is an object, and a wafer B, which is a second object.

夫々マスクステージ(8a)とウェハステージ(8b)
を示すだけでその他の構成は省略されている。
Mask stage (8a) and wafer stage (8b) respectively
is shown and other configurations are omitted.

本実施例では、マスクA上及びウェハB上に設けられた
マスク回折格子(1a)及びウェハ回折格子(lb)と
、シリンダレンズ(20)及びミラー(21)を介して
両回折格子(la) (lb)に対して垂直方向からレ
ーザ光(2周波コヒーレント光)を照射せしめる横ゼー
マンレーザからなる光源(2)と、前記マスクステージ
(8a)及びウェハステージ(8b)のみを示した移動
機構と、この照射によって両回折格子(la) (lb
)から生じる回折光のうち±1次回折光を取り出すミラ
ー(30) (31)及び±4次回折光を取り出すミラ
ー(32) (33)の回折光取り出し手段と、該ミラ
ー(31) (33)で−1次並びに−4次方向で取り
出された回折光の偏波面を90’ずらす1/2波長板(
50) (51)及び前記ミラー(30)(32)で取
り出された±1次回折光と±4次回折光がこの90’偏
波面のずらされた一1次回折光と一4次回折光と干渉し
合い更にそこで偏光せしめられることになる偏光ビーム
スプリンタ(52) (53)からなる光干渉手段と、
マスク回折格子(1a)側から取り出されてくる±1次
及び±4次回折光の光ヘテロダイン干渉光をナイフェツ
ジミラー(34) (35)で反射せしめて検出し、そ
の干渉から生じる±1次回折光由来のヒート信号と±4
次回折光由来のヒート信号を生成するマスク1次光デイ
テクタ(60)及びマスク4次光デイテクタ(61)、
更にウェハ回折格子(1b)側から取り出されてくる±
1次及び±4次回折光の光ヘテロダイン干渉光を検出し
、その干渉光から生ずる±1次回折光由来のヒート信号
と±4次回折光由来のヒート信号を生成するウェハ1次
光デイテクタ(62)及びウェハ4次光デイテクタ(6
3)からなる検出手段と、これらの各検出手段で生成さ
れたヒート信号を入力し、±1次回折光に由来するヒー
ト信号間の位相差及び±4次回折光に由来するヒート信
号間の位相差を測定し、これらの位相差に基づいて前記
移動機構に制御信号を出力する信号処理制御回路(7)
とを有している。
In this example, a mask diffraction grating (1a) and a wafer diffraction grating (lb) provided on a mask A and a wafer B, and both diffraction gratings (la) are connected via a cylinder lens (20) and a mirror (21). a light source (2) consisting of a transverse Zeeman laser that irradiates laser light (two-frequency coherent light) from a perpendicular direction to (lb); and a movement mechanism showing only the mask stage (8a) and wafer stage (8b). , this irradiation causes both diffraction gratings (la) (lb
) diffracted light extraction means for extracting ±1st-order diffracted light from the diffracted light generated from A 1/2 wavelength plate that shifts the plane of polarization of the diffracted light extracted in the -1st and -4th directions by 90' (
50) The ±1st-order diffracted light and ±4th-order diffracted light taken out by (51) and the mirrors (30) and (32) interfere with each other with the 11th-order diffracted light and the 14th-order diffracted light whose 90' polarization planes are shifted. Furthermore, an optical interference means consisting of polarizing beam splinters (52) (53) to be polarized;
Optical heterodyne interference light of ±1st order and ±4th order diffracted light taken out from the mask diffraction grating (1a) side is reflected by a knife mirror (34) (35) and detected, and the ±1st order resulting from the interference is detected. Heat signal derived from folded light and ±4
a masked first-order light detector (60) and a masked fourth-order light detector (61) that generate a heat signal derived from the next-order diffracted light;
Furthermore, ± is taken out from the wafer diffraction grating (1b) side.
a wafer primary optical detector (62) that detects optical heterodyne interference light of the first-order and ±4th-order diffracted lights, and generates a heat signal derived from the ±1st-order diffracted light and a heat signal derived from the ±4th-order diffracted light generated from the interference light; Wafer 4th order optical detector (6
3), and the heat signals generated by each of these detection means are input, and the phase difference between the heat signals originating from the ±1st-order diffracted light and the phase difference between the heat signals originating from the ±4th-order diffracted light are detected. a signal processing control circuit (7) that measures the phase difference and outputs a control signal to the moving mechanism based on these phase differences;
It has

尚、上記装置構成において、マスク回折格子(1a)と
ウェハ回折格子(lb)は格子長手方向にわずかにずれ
ている。又、マスクA面には光透過窓(1c)が設けら
れており、ウェハ回折格子(1b)に対する前記コヒー
レント光の照射と該回折格子(1b)からの回折光の取
り出しはこの光透過窓(1c)を介してなされている。
In the above device configuration, the mask diffraction grating (1a) and the wafer diffraction grating (lb) are slightly shifted in the longitudinal direction of the grating. Further, a light transmission window (1c) is provided on the mask A surface, and irradiation of the coherent light onto the wafer diffraction grating (1b) and extraction of the diffracted light from the diffraction grating (1b) are performed through this light transmission window (1c). 1c).

更に前記信号処理制御回路(7)には測定された各位相
差を表示する位相計(図示なし)も同時に設置されてい
る。
Furthermore, a phase meter (not shown) for displaying each measured phase difference is also installed in the signal processing control circuit (7).

以上の装置構成の使用方法を次に説明する。How to use the above device configuration will be explained next.

上記光源(2)の横ゼーマンレーザは、直交直線偏光2
周波成分子1、f2を含んだ光を発生し、このコヒーレ
ント光を垂直方向からマスク回折格子(1a)及びウェ
ハ回折格子(1b)に夫々照射する。この時、ウェハ回
折格子(1b)に対しては前記光透過窓(1c)を通っ
て照射されることになる。
The transverse Zeeman laser of the light source (2) has orthogonal linear polarization 2
Light containing frequency components 1 and f2 is generated, and this coherent light is irradiated vertically onto a mask diffraction grating (1a) and a wafer diffraction grating (1b), respectively. At this time, the wafer diffraction grating (1b) is irradiated through the light transmission window (1c).

この照射によって両回折格子(la) (lb)には第
2図に示すような各方向に回折光が生じ、そのうち±1
次回折光をミラー(30) (31)で又±4次回折光
をミラー(32) (33)で偏光ビームスプリッタ(
52) (53)方向に反射せしめ、そこからその一部
はナイフェツジミラー(34) (35)を介してマス
ク1次光デイテクタ(60)及びマスク4次光デイテク
タ(61)に、又残りはウェハ1次光デイテクタ(62
)及びウェハ4次光デイテクタ(63)に達し、そこで
検出される。上記回折光のうち、ミラー(31)(33
)によって反射せしめられた一1次回折光と一4次回折
光はその途中172波長板(50)(51)によってそ
の偏波面を90’ずらされる(垂直成分は水平に、又水
平成分は垂直にずらされる)ため、偏光ビームスプリッ
タ(52) (53)で夫々+1次回折光及び±4次回
折光と干渉し合い、光ヘテロダイン干渉光となる。この
ため各ディテクタ(60) (61) (62) (6
3)では該干渉光によるヒート信号が生成され、信号処
理制御回路(7)にこれらヒート信号が送られる。該回
路(7)では、マスク1次光デイテクタ(60)より送
られてくるヒート信号と、ウェハ1次光デイテクタ(6
2)より送られてくるヒート信号の位相差が測定され、
第3図(a)に示されるような信号波形が得られること
になる。又同じくこの信号処理制御回路(7)にはマス
ク4次光デイテクタ(61)より送られてくるヒート信
号とウェハ4次光デイテクタ(63)より送られてくる
ヒート信号の位相差が測定され、同図(b)に示される
ような信号波形が得られる。第3図(a)に示された信
号波形では、回折格子1/2ピツチを周期とする線形信
号となり、同図(b)のそれでは1回折格子178ピッ
チを周期とする線形信号となる。
Due to this irradiation, diffraction light is generated in both the diffraction gratings (la) and (lb) in each direction as shown in Figure 2, of which ±1
The second order diffracted light is sent to the mirrors (30) (31), and the ±4th order diffraction light is sent to the polarizing beam splitter (32) (33).
52) It is reflected in the (53) direction, and from there, a part of it is reflected to the mask primary light detector (60) and the mask 4th order light detector (61) via the knife mirrors (34) and (35), and the rest is is the wafer primary optical detector (62
) and the wafer fourth-order optical detector (63), where it is detected. Among the above diffracted lights, mirrors (31) (33
The 11th-order diffracted light and the 14th-order diffracted light reflected by Therefore, the +1st-order diffracted light and the ±4th-order diffracted light interfere with each other at the polarizing beam splitters (52) and (53), respectively, to form optical heterodyne interference light. Therefore, each detector (60) (61) (62) (6
In 3), heat signals are generated by the interference light, and these heat signals are sent to the signal processing control circuit (7). In the circuit (7), the heat signal sent from the mask primary optical detector (60) and the wafer primary optical detector (60) are processed.
2) The phase difference of the heat signal sent from the
A signal waveform as shown in FIG. 3(a) is obtained. Similarly, this signal processing control circuit (7) measures the phase difference between the heat signal sent from the mask 4th light detector (61) and the heat signal sent from the wafer 4th light detector (63). A signal waveform as shown in FIG. 4(b) is obtained. The signal waveform shown in FIG. 3(a) is a linear signal with a period of 1/2 pitch of the diffraction grating, and the signal waveform shown in FIG. 3(b) is a linear signal with a period of 178 pitches of the diffraction grating.

このように信号処理制御回路(7)では、±1次回折光
由来のヒート信号の位相差と、±4次回折光由来のヒー
ト信号の位相差を検出しているので、回折格子1/2ピ
ツチの範囲内でマスクAとウェハBの相対的な位置ずれ
量が測定でき。
In this way, the signal processing control circuit (7) detects the phase difference between the heat signals derived from the ±1st-order diffracted light and the phase difference between the heat signals derived from the ±4th-order diffracted light, so the 1/2 pitch of the diffraction grating is The amount of relative positional deviation between mask A and wafer B can be measured within this range.

しかも±4次回折光の持つ分解能〔位相計分解能を1°
程度とすると、その分解能は(P/8)/360” と
いうことになり、±1次回折光の分解能の4倍になる〕
を同時に達成できることになる。
Moreover, the resolution of ±4th order diffracted light [phase meter resolution is 1°]
In terms of degree, the resolution is (P/8)/360", which is four times the resolution of the ±1st-order diffracted light.]
can be achieved at the same time.

第4図は同じくシンクロトロン放射光露光装置のマスク
AとウェハBの位置合せ用に使用された第4発明の位置
合せ装置の実施例構成を示している。
FIG. 4 shows the construction of an embodiment of the alignment apparatus of the fourth invention, which is also used for alignment of mask A and wafer B in a synchrotron radiation exposure apparatus.

本実施例装置構成では、横ゼーマンレーザの光源(2)
より発せられた2周波酸分子工、f2を有するコヒーレ
ント光をハーフミラ−(22)によりその一部は偏光ビ
ームスプリッタ(40)側に、又その残りはミラー(2
3)を介して別の偏光ビームスプリッタ(41)側に進
入せしめ、両偏光ビームスプリッタ(40)(41)に
より夫々上記コヒーレント光をf1構成とf2構成を有
する光に分離し、更に夫々ミラー(42) (43)と
ミラー(44) (45)でマスク回折格子(1a)と
ウェハ回折格子(1b)に対して夫々+1次方向と±4
次方向より照射する。
In the device configuration of this embodiment, a transverse Zeeman laser light source (2)
A part of the coherent light having f2 is sent to the polarizing beam splitter (40) side by the half mirror (22), and the rest is sent to the mirror (22).
3) and enters another polarizing beam splitter (41) side, and the coherent light is separated into light having an f1 configuration and an f2 configuration by both polarizing beam splitters (40) and (41), respectively, and is further separated by a mirror ( 42) (43) and mirrors (44) (45) in the +1st order direction and ±4 with respect to the mask diffraction grating (1a) and the wafer diffraction grating (1b), respectively.
Irradiate from the following direction.

この時第5図に示されるようにf0構成の光は1/2波
長板(50) (51)によってその偏波面が90″ず
らされ、ミラー(42)(44)により各回折格子(l
a) (lb)に対し、+1次方向及び+4次方向から
照射される。又本実施例では+1次方向からの照射で生
じる回折光と±4次方向からの照射で生じる回折光がい
ずれも垂直方向に生ずることになり重なってしまうため
、第5図の丁度真横から見た状態を示す第6図に示され
るように、+1次方向の照射と±4次方向の照射を角度
を異ならしめながら斜入射させることにより、回折光の
取り出しをその斜入射角度に対応せしめた方向で行なえ
る(斜方検出ができる)ようにしている。
At this time, as shown in Fig. 5, the polarization plane of the light of f0 configuration is shifted by 90'' by the 1/2 wavelength plate (50) (51), and each diffraction grating (l) is shifted by the mirror (42) (44).
a) (lb) is irradiated from the +1st direction and +4th direction. Furthermore, in this example, the diffracted light generated by irradiation from the +1st-order direction and the diffracted light generated by irradiation from the ±4th-order direction are both generated in the vertical direction and overlap, so when viewed from exactly the side in FIG. As shown in Fig. 6, which shows the state in which the diffracted light is extracted, the extraction of the diffracted light corresponds to the angle of oblique incidence by making the irradiation in the +1st-order direction and the irradiation in the ±4th-order direction obliquely incident at different angles. It is designed so that it can be performed in any direction (oblique detection is possible).

以上のようにして照射された光は各回折格子(la)(
lb)で回折した時点で光ヘテロダイン干渉光となって
ミラー(36) (37)及びナイフェツジミラー(3
4) (35)を介してマスク1次光デイテクタ(60
)及びウェハ1次光デイテクタ(62)とマスク4次光
デイテクタ(61)及びウェハ4次光デイテクタ(63
)にヒート信号として夫々検出される。
The light irradiated in the above manner is transmitted to each diffraction grating (la) (
When diffracted by the mirror (36) (37) and the Naifezi mirror (3), it becomes an optical heterodyne interference light.
4) Mask primary light detector (60) via (35)
), a wafer primary optical detector (62), a mask 4th optical detector (61), and a wafer 4th optical detector (63).
) are detected as heat signals.

更に検出された各ヒート信号は信号処理制御回路(7)
に入力され、±1次照射光に由来するヒート信号の位相
差と±4次照射光に由来するヒート信号の位相差を夫々
測定して、マスクAとウェハ8間の相対的位置ずれ量を
各々検出する。得られる位相差の信号波形は前実施例の
第3図(a) (b)に示されたものと同じになり、そ
のためその詳細については省略する。
Furthermore, each detected heat signal is sent to a signal processing control circuit (7).
The phase difference of the heat signal derived from the ±1st irradiation light and the phase difference of the heat signal derived from the ±4th irradiation light are measured, respectively, and the amount of relative positional deviation between the mask A and the wafer 8 is calculated. Detect each. The signal waveform of the obtained phase difference is the same as that shown in FIGS. 3(a) and 3(b) of the previous embodiment, and therefore its details will be omitted.

尚、以上本発明で使用される回折格子のタイプは、反射
型、透過型、振幅型、位相型等積々のものが使用可能で
ある。又光源についても、横ゼーマンレーザのほか、軸
ゼーマンレーザと174波長板の組合せ、及び安定化レ
ーザと周波数シックの組合せ等が可能である。更に以上
の実施例で示したものはマスク回折格子とウェハ回折格
子から得られる各回折光をヒート信号に変換して各ヒー
ト信号の位相差を測定したものであり、これにより得ら
れるマスクとウェハの変位置は相対的なものであるが、
別に基準ヒート信号を採り、これに対してマスク及びウ
ェハが夫々どの程度ずれているかを測定する絶対位置ず
れ検出方式を採用することもできる。
It should be noted that various types of diffraction gratings can be used in the present invention, including reflection type, transmission type, amplitude type, and phase type. As for the light source, in addition to a transverse Zeeman laser, a combination of an axial Zeeman laser and a 174 wavelength plate, a combination of a stabilized laser and a frequency sick, etc. are possible. Furthermore, in the example described above, each diffracted light obtained from a mask diffraction grating and a wafer diffraction grating is converted into a heat signal, and the phase difference of each heat signal is measured. Although the displacement of is relative,
Alternatively, it is also possible to adopt an absolute positional deviation detection method in which a reference heat signal is taken and the extent to which the mask and wafer are respectively deviated from the reference heat signal is measured.

〔発明の効果〕〔Effect of the invention〕

以上詳述したように本発明法並びに装置によれば、光ヘ
テロダイン位置検出方式の必要な検出分解能を高く維持
したまま、この分解能とは相反する関係にある権出範囲
をこれまでとは逆に著しく拡大することガでき、そのた
め第1の物体と第2の物体のサブハーフミクロン範囲の
微小変位の検出が可能で、且つその検出によって位置合
せ精度も飛躍的に向上せしめることができるようになる
As detailed above, according to the method and device of the present invention, while maintaining the high detection resolution required by the optical heterodyne position detection method, the detection range, which has a contradictory relationship with this resolution, can be changed contrary to the conventional method. This makes it possible to detect minute displacements in the sub-half micron range between the first object and the second object, and this detection also makes it possible to dramatically improve alignment accuracy. .

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は第5発明の位置合せ装置の一実施例に係る構成
を示す概略図、第2図は本実施例において各回折格子で
の回折光の発生状況を示す説明図、第3図(a) (b
)は本実施例において各位相差の検出の結果得られた位
相計の信号波形を示す図、第4図は第4発明の位置合せ
装置の実施例構成を示す概略図、第5図は本実施例の装
置正面から見た照射光の照射状況を示す正面図、第6図
は前回の丁度真横から見た照射光の斜入射状況及び回折
光の斜方検出状況を示す側面図、第7図は従来の光ヘテ
ロダイン位置検出方式の説明図である。 図中、Aはマスク、Bはウェハ、(1a)はマスク回折
格子、(1b)はウェハ回折格子、(2)は光源、(3
0) (31) (32) (33) (42) (4
2a) (43) (43a) (44)(45)はミ
ラー、(40) (41) (52) (53)は偏光
ビームスプリッタ、(50) (51) (54)’(
55)は172波長板、(60) (60a) (61
) (62) (62a) (63)はディテクタ、(
7)は信号処理制御回路を各示す。 1a・・マスク回折格子 1b・・・ウェハ回折格子 1C・・光透過窓 第2図 第 図 手続補正書 (自発) 補   正   内   容 平成2年l1月76日
FIG. 1 is a schematic diagram showing the configuration of an embodiment of the alignment device of the fifth invention, FIG. 2 is an explanatory diagram showing the generation situation of diffracted light at each diffraction grating in this embodiment, a) (b)
) is a diagram showing the signal waveform of the phase meter obtained as a result of detection of each phase difference in this embodiment, FIG. 4 is a schematic diagram showing the configuration of an embodiment of the alignment device of the fourth invention, and FIG. Fig. 6 is a front view showing the irradiation situation of the irradiation light seen from the front of the device in the example, Fig. 6 is a side view showing the oblique incidence situation of the irradiation light and the oblique detection situation of the diffracted light as seen from the previous side, and Fig. 7 is an explanatory diagram of a conventional optical heterodyne position detection method. In the figure, A is a mask, B is a wafer, (1a) is a mask diffraction grating, (1b) is a wafer diffraction grating, (2) is a light source, and (3) is a mask grating.
0) (31) (32) (33) (42) (4
2a) (43) (43a) (44) (45) are mirrors, (40) (41) (52) (53) are polarizing beam splitters, (50) (51) (54)'(
55) is a 172 wavelength plate, (60) (60a) (61
) (62) (62a) (63) is a detector, (
7) shows each signal processing control circuit. 1a...Mask diffraction grating 1b...Wafer diffraction grating 1C...Light transmission window Figure 2 Procedure amendment (voluntary) Amendment contents January 76, 1990

Claims (5)

【特許請求の範囲】[Claims] (1)わずかに異なる2周波数のコヒーレント光を、第
1の回折格子を有する第1の物体と第2の回折格子を有
する第2の物体に垂直方向から照射し又はこれら第1及
び第2の物体に夫々±n次の方向から照射することによ
り、第1及び第2の回折格子から夫々生じる±n次回折
光を検出し又はこれら各回折格子から夫々垂直方向に生
じる回折光を検出し、且つ前記回折時点で又は回折光路
途中で2周波成分を干渉せしめて光ヘテロダイン干渉回
折光とすることでこれを基にヒート信号を夫々生成し、
これらのヒート信号の位相差を測定することで前記第1
及び第2の物体の変位置を検出する位置検出方法におい
て、各回折格子から±n次回折方向で取り出される回折
光につき、その回折次数の絶対値nが異なる複数の回折
方向でこれを取り出して更に光ヘテロダイン干渉せしめ
てこの干渉光を検出し、又は各回折格子に対する前記コ
ヒーレント光の±n次からの照射方向につき次数の絶対
値nが異なる複数の照射方向となるようにこれらの回折
格子に夫々照射してこれらの照射によって第1及び第2
の回折格子から垂直方向に夫々取り出され更に光ヘテロ
ダイン干渉光とされた回折光を検出し、該回折光の検出
により各ヒート信号を生成せしめて、±n次回折光の次
数の絶対値nが等しいものから最終的に生成されるヒー
ト信号同士の位相差又は±n次方向からのコヒーレント
光の照射の結果垂直方向に取り出されて光ヘテロダイン
干渉光にされた回折光のうち前記照射方向次数の絶対値
nが等しい干渉回折光から最終的に生成されるヒート信
号同士の位相差を夫々測定してこれらの各位相差に基づ
いて前記第1及び第2の物体の変位置を検出する位置検
出方法。
(1) Coherent light of two slightly different frequencies is irradiated vertically onto a first object having a first diffraction grating and a second object having a second diffraction grating, or detecting the ±nth order diffracted light generated from the first and second diffraction gratings respectively by irradiating the object from the ±nth order directions, or detecting the diffracted light generated in the vertical direction from each of these diffraction gratings, and By interfering the two frequency components at the time of the diffraction or in the middle of the diffracted optical path to produce an optical heterodyne interference diffracted light, heat signals are respectively generated based on this,
By measuring the phase difference between these heat signals, the first
In the position detection method for detecting the displacement of a second object, the diffracted light extracted from each diffraction grating in the ±nth order diffraction direction is extracted in a plurality of diffraction directions in which the absolute value n of the diffraction order is different. Furthermore, optical heterodyne interference is caused to detect this interference light, or these diffraction gratings are irradiated with a plurality of irradiation directions in which the absolute value n of the order is different for each irradiation direction from the ±nth order of the coherent light to each diffraction grating. These irradiations cause the first and second
The diffracted lights taken out in the vertical direction from the diffraction gratings and further converted into optical heterodyne interference lights are detected, and each heat signal is generated by the detection of the diffracted lights, so that the absolute values n of the orders of the ±n-th diffracted lights are equal. The phase difference between the heat signals finally generated from the object or the absolute order of the order in the irradiation direction of the diffracted light extracted in the vertical direction and made into optical heterodyne interference light as a result of irradiation with coherent light from the ±n-order direction A position detection method that measures phase differences between heat signals finally generated from interference diffraction lights having the same value n, and detects displacement positions of the first and second objects based on these phase differences.
(2)第1の物体に設けた第1の回折格子と、第2の物
体に設けた第2の回折格子と、わずかに異なる2周波数
のコヒーレント光を発生させる光源と、該光源から照射
されたコヒーレント光を前記第1及び第2の回折格子の
夫々に対して±n次の方向から入射させる入射角調整手
段と、各回折格子で照射光が回折する時点で又は各回折
格子から垂直方向に夫々取り出される回折光の光路途中
で2周波成分を干渉せしめて光ヘテロダイン干渉光とす
る光干渉手段と、第1及び第2の回折格子から垂直方向
に夫々取り出され、且つ前記光干渉手段によって光ヘテ
ロダイン干渉光となった回折光を検出してヒート信号を
夫々生成する検出手段と、これらのヒート信号からその
位相差を測定してこの位相差に基づき前記第1及び第2
の物体の変位置を検出する信号処理手段を有する位置検
出装置において、前記入射角調整手段による各回折格子
に対する±n次方向からのコヒーレント光の照射につき
次数の絶対値nが異なる複数の方向からこれらの各回折
格子に夫々照射できるようにすると共に、前記検出手段
についてもこれらの照射方向に対応させて各光ヘテロダ
イン干渉回折光の検出及び各ヒート信号の生成ができる
ようにし、更に前記信号処理手段についても±n次方向
からのコヒーレント光の照射の結果垂直方向に取り出さ
れる回折光のうち前記照射方向次数の絶対値nが等しい
回折光から最終的に生成されるヒート信号同士の位相差
を夫々測定し、これらの各位相差に基づき前記第1及び
第2の物体の変位置を検出するようにしたことを特徴と
する位置検出装置。
(2) A first diffraction grating provided on a first object, a second diffraction grating provided on a second object, a light source that generates coherent light of two slightly different frequencies; an incident angle adjusting means for making the coherent light incident on each of the first and second diffraction gratings from ±n-order directions; an optical interference means that interferes two frequency components in the optical path of the diffracted lights taken out respectively to produce optical heterodyne interference light; detection means for detecting the diffracted light that has become the optical heterodyne interference light and generating heat signals respectively;
In a position detection device having a signal processing means for detecting a displacement of an object, the incident angle adjusting means irradiates each diffraction grating with coherent light from ±n-order directions from a plurality of directions with different absolute values n of the orders. In addition to making it possible to irradiate each of these diffraction gratings, the detection means is also made to correspond to these irradiation directions so that each optical heterodyne interference diffraction light can be detected and each heat signal can be generated, and furthermore, the above-mentioned signal processing As for the means, the phase difference between the heat signals finally generated from the diffracted lights having the same absolute value n of the orders in the irradiation direction among the diffracted lights taken out in the vertical direction as a result of the irradiation of coherent light from ±n-order directions is determined. A position detection device characterized in that the positions of the first and second objects are detected based on the phase differences of the first and second objects.
(3)第1の物体に設けた第1の回折格子と、第2の物
体に設けた第2の回折格子と、わずかに異なる2周波数
のコヒーレント光を発生させる光源と、該光源から発生
したコヒーレント光を前記第1及び第2の回折格子の夫
々に照射した時にこれらの回折格子から生ずる回折光の
うち±n次回折光の取り出しを行なう回折光取り出し手
段と、前記回折光の取り出し光路途中で2周波成分を干
渉せしめて光ヘテロダイン干渉光とする光干渉手段と、
前記回折光取り出し手段によって取り出され且つ光干渉
手段によって光ヘテロダイン干渉光となった±n次の回
折光を検出してヒート信号を夫々生成する検出手段と、
これらのヒート信号からその位相差を測定してこの位相
差に基づき前記第1及び第2の物体の変位置を検出する
信号処理手段を有する位置検出装置において、前記回折
光取り出し手段により各回折格子から±n次回折方向で
取り出される回折光につき、その回折次数の絶対値nが
異なる複数の回折方向でこれを取り出すと共に、前記検
出手段についてもこれらの回折光取り出し方向に対応さ
せて各光ヘテロダイン干渉回折光の検出及び各ヒート信
号の生成ができるようにし、更に前記信号処理手段につ
いても、検出手段により検出された各回折光のうち次数
の絶対値nが等しいものから最終的に生成されるヒート
信号同士の位相差を夫々測定し、これらの各位相差に基
づき前記第1及び第2の物体の変位置を検出するように
したことを特徴とする位置検出装置。
(3) a first diffraction grating provided on a first object, a second diffraction grating provided on a second object, a light source that generates coherent light of two slightly different frequencies, and a light source that generates coherent light of two slightly different frequencies; a diffracted light extracting means for extracting ±n-order diffracted light among diffracted lights generated from the first and second diffraction gratings when coherent light is irradiated onto each of the first and second diffraction gratings; an optical interference means for interfering two frequency components to produce optical heterodyne interference light;
Detection means for detecting ±n-order diffracted light extracted by the diffracted light extraction means and turned into optical heterodyne interference light by the optical interference means to generate heat signals, respectively;
In a position detection device having a signal processing means for measuring a phase difference from these heat signals and detecting displacement of the first and second objects based on this phase difference, each diffraction grating is detected by the diffraction light extraction means. Regarding the diffracted light extracted in the ±nth order diffraction direction from The interference diffracted light can be detected and each heat signal can be generated, and the signal processing means is finally generated from the diffracted lights having the same order absolute value n among the diffracted lights detected by the detection means. A position detection device characterized in that a phase difference between heat signals is measured, and displacement positions of the first and second objects are detected based on these phase differences.
(4)第1の物体に設けた第1の回折格子と、第2の物
体に設けた第2の回折格子と、第1の物体及び/又は第
2の物体を動かす移動機構と、わずかに異なる2周波数
のコヒーレント光を発生させる光源と、該光源から照射
されたコヒーレント光を前記第1及び第2の回折格子の
夫々に対して±n次の方向から入射させる入射角調整手
段と、各回折格子で照射光が回折する時点で又は各回折
格子から垂直方向に夫々取り出される回折光の光路途中
で2周波成分を干渉せしめて光ヘテロダイン干渉光とす
る光干渉手段と、第1及び第2の回折格子から垂直方向
に夫々取り出され、且つ前記光干渉手段によって光ヘテ
ロダイン干渉光となった回折光を検出してヒート信号を
夫々生成する検出手段と、これらのヒート信号からその
位相差を測定してこの位相差に基づき前記移動機構に制
御信号を出力し、第1の物体及び/又は第2の物体を動
かして位置合せする信号処理制御手段を有する位置合せ
装置において、前記入射角調整手段による各回折格子に
対する±n次方向からのコヒーレント光の照射につき次
数の絶対値nが異なる複数の方向からこれらの各回折格
子に夫々照射できるようにすると共に、前記検出手段に
ついてもこれらの照射方向に対応させて各光ヘテロダイ
ン干渉回折光の検出及び各ヒート信号の生成ができるよ
うにし、更に前記信号処理制御手段についても±n次方
向からのコヒーレント光の照射の結果垂直方向に取り出
される回折光のうち前記照射方向次数の絶対値nが等し
い回折光から最終的に生成されるヒート信号同士の位相
差を夫々測定し、これらの各位相差に基づいて前記移動
機構に対し制御信号を出力するようにしたことを特徴と
する位置合せ装置。
(4) A first diffraction grating provided on the first object, a second diffraction grating provided on the second object, and a movement mechanism that moves the first object and/or the second object, a light source that generates coherent light of two different frequencies; an incident angle adjusting means that causes the coherent light irradiated from the light source to be incident on each of the first and second diffraction gratings from ±n-order directions; an optical interference means for generating optical heterodyne interference light by interfering two frequency components at the time when the irradiated light is diffracted by the diffraction grating or during the optical path of the diffracted light taken out in the vertical direction from each diffraction grating; detection means for generating heat signals by detecting the diffracted lights taken out in the vertical direction from the diffraction gratings and turned into optical heterodyne interference lights by the optical interference means; and measuring the phase difference from these heat signals. and outputs a control signal to the moving mechanism based on this phase difference to move and align the first object and/or the second object. irradiation of each diffraction grating with coherent light from ±n-order directions by irradiating each diffraction grating from a plurality of directions with different absolute values n of orders, and also for the detection means to irradiate these irradiation directions. Detection of each optical heterodyne interference diffraction light and generation of each heat signal can be performed in accordance with the above-mentioned signal processing control means. The phase difference between the heat signals finally generated from the diffracted lights having the same absolute value n of the order in the irradiation direction is measured, and a control signal is output to the moving mechanism based on each of these phase differences. An alignment device characterized by:
(5)第1の物体に設けた第1の回折格子と、第2の物
体に設けた第2の回折格子と、第1の物体及び/又は第
2の物体を動かす移動機構と、わずかに異なる2周波数
のコヒーレント光を発生させる光源と、該光源から発生
したコヒーレント光を前記第1及び第2の回折格子の夫
々に照射した時にこれらの回折格子から生ずる回折光の
うち±n次回折光の取り出しを行なう回折光取り出し手
段と、前記回折光の取り出し光路途中で2周波成分を干
渉せしめて光ヘテロダイン干渉光とする光干渉手段と、
前記回折光取り出し手段によって取り出され且つ光干渉
手段によって光ヘテロダイン干渉光となった±n次の回
折光を検出してヒート信号を夫々生成する検出手段と、
これらのヒート信号からその位相差を測定してこの位相
差に基づき前記移動機構に制御信号を出力し、第1の物
体及び/又は第2の物体を動かして位置合せする信号処
理制御手段を有する位置合せ装置において、前記回折光
取り出し手段により各回折格子から±n次回折方向で取
り出される回折光につきその回折次数の絶対値nが異な
る複数の回折方向でこれを取り出すと共に、前記検出手
段についてもこれらの回折光取り出し方向に対応させて
各光ヘテロダイン干渉回折光の検出及び各ヒート信号の
生成ができるようにし、更に前記信号処理制御手段につ
いても、検出手段により検出された各回折光のうち次数
の絶対値nが等しいものから最終的に生成されるヒート
信号同士の位相差を夫々測定し、これらの各位相差に基
づいて前記移動機構に対し制御信号を出力するようにし
たことを特徴とする位置合せ装置。
(5) A first diffraction grating provided on the first object, a second diffraction grating provided on the second object, and a movement mechanism that moves the first object and/or the second object, A light source that generates coherent light of two different frequencies, and ±n-order diffracted light of the diffracted light generated from these diffraction gratings when the coherent light generated from the light source is irradiated to each of the first and second diffraction gratings. a diffracted light extracting means for extracting the diffracted light; an optical interference means for interfering two frequency components in the middle of the extracting optical path of the diffracted light to produce optical heterodyne interference light;
Detection means for detecting ±n-order diffracted light extracted by the diffracted light extraction means and turned into optical heterodyne interference light by the optical interference means to generate heat signals, respectively;
It has a signal processing control means that measures the phase difference from these heat signals, outputs a control signal to the moving mechanism based on this phase difference, and moves and aligns the first object and/or the second object. In the alignment device, the diffraction light extraction means extracts the diffracted light extracted from each diffraction grating in the ±n-order diffraction direction in a plurality of diffraction directions in which the absolute value n of the diffraction order is different, and the detection means It is possible to detect each optical heterodyne interference diffracted light and generate each heat signal in correspondence with the direction in which these diffracted lights are taken out, and furthermore, the signal processing control means is configured to detect the order of each diffracted light detected by the detection means. A phase difference between heat signals finally generated from heat signals having the same absolute value n is measured, and a control signal is output to the moving mechanism based on each of these phase differences. Alignment device.
JP2101571A 1990-04-19 1990-04-19 Position detecting method, apparatus therefor and position aligning apparatus Expired - Lifetime JPH0635924B2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2101571A JPH0635924B2 (en) 1990-04-19 1990-04-19 Position detecting method, apparatus therefor and position aligning apparatus
US07/688,115 US5182610A (en) 1990-04-19 1991-04-19 Position detecting method and device therefor as well as aligning device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2101571A JPH0635924B2 (en) 1990-04-19 1990-04-19 Position detecting method, apparatus therefor and position aligning apparatus

Publications (2)

Publication Number Publication Date
JPH042116A true JPH042116A (en) 1992-01-07
JPH0635924B2 JPH0635924B2 (en) 1994-05-11

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0981736A (en) * 1995-09-08 1997-03-28 Fuji Electric Co Ltd Scratch inspection device
WO2021083043A1 (en) * 2019-10-31 2021-05-06 清华大学 Exposure light beam phase measurement method in laser interference photolithography, and photolithography system

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0981736A (en) * 1995-09-08 1997-03-28 Fuji Electric Co Ltd Scratch inspection device
WO2021083043A1 (en) * 2019-10-31 2021-05-06 清华大学 Exposure light beam phase measurement method in laser interference photolithography, and photolithography system
US12393127B2 (en) 2019-10-31 2025-08-19 Tsinghua University Exposure light beam phase measurement method in laser interference photolithography, and photolithography system

Also Published As

Publication number Publication date
JPH0635924B2 (en) 1994-05-11

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