JPH042170A - Temperature compensation method for span voltage of semiconductor diffused resistor type of pressure sensor - Google Patents
Temperature compensation method for span voltage of semiconductor diffused resistor type of pressure sensorInfo
- Publication number
- JPH042170A JPH042170A JP10271490A JP10271490A JPH042170A JP H042170 A JPH042170 A JP H042170A JP 10271490 A JP10271490 A JP 10271490A JP 10271490 A JP10271490 A JP 10271490A JP H042170 A JPH042170 A JP H042170A
- Authority
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- Prior art keywords
- resistor
- resistance
- pressure sensor
- diffused
- temperature
- Prior art date
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Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、半導体拡散抵抗膨圧カセンサにおけるスパン
電圧温度補償方法に関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a span voltage temperature compensation method in a semiconductor diffused resistor turgor pressure sensor.
（従来の技術）
半導体拡散抵抗形圧力センサとして、第１図に示すもの
がある。この圧力センサは、圧力センサ素子１と、オペ
レーショナルアンプ２とを有している。(Prior Art) As a semiconductor diffusion resistance type pressure sensor, there is one shown in FIG. This pressure sensor includes a pressure sensor element 1 and an operational amplifier 2.
圧力センサ素子ｌは、構造的には、シリコン単結晶基板
の裏面を感圧ダイアフラム面として、該表面に拡散抵抗
をブリッジ形に形成し、その裏面に加わる圧力によって
その基板を歪ませてその拡散抵抗の抵抗値を変化させ、
この変化に対応したスパン電圧（Ｖｓｐａｎ）を出力す
ることができるものであり、電気等価回路的には、第１
図のように抵抗Ｒ１〜Ｒ４によりホイストンブリッジに
構成されている。ここで、スパン電圧（Ｖｓｐａｎ）と
は、圧力が印加されたときの出力電圧（Ｖｏ）から、圧
力が印加されないときの出力電圧（Ｖｏ）、すなわちオ
フセット電圧（Ｖｏｆｆ’）を差し引いた電圧のことで
ある。Structurally, the pressure sensor element 1 has a pressure-sensitive diaphragm surface on the back surface of a silicon single crystal substrate, and a bridge-shaped diffused resistor formed on the surface.The pressure applied to the back surface distorts the substrate and causes the diffusion. By changing the resistance value of the resistor,
It can output a span voltage (Vspan) corresponding to this change, and in terms of electrical equivalent circuit, the first
As shown in the figure, the resistors R1 to R4 form a Whiston bridge. Here, the span voltage (Vspan) is the voltage obtained by subtracting the output voltage (Vo) when no pressure is applied, that is, the offset voltage (Voff') from the output voltage (Vo) when pressure is applied. It is.
オペレーショナルアンプ２は、差動増幅回路ＡＭＰ、入
力抵抗Ｒｓ、および負帰還抵抗Ｒｆを有している。The operational amplifier 2 includes a differential amplifier circuit AMP, an input resistance Rs, and a negative feedback resistance Rf.
このような圧力センサにおいて、スパン電圧（Ｖｓｐａ
ｎ）は、次式■であられされる。In such a pressure sensor, the span voltage (Vspa
n) is expressed by the following formula (■).
Ｖｓｐａｎ＝ＫＯ−ｖｂ ・〔Ｐ／（ｌ十βＴ））・・
・■
ここで、Ｋｏは定数、ｖｂは圧力センサ素子ｌに加えら
れるブリッジ電圧、Ｐは圧力センサ素子ｌに加わる圧力
、βは圧力センサ素子ｌの温度係数、Ｔは圧力センサ素
子１の周囲温度である。Vspan=KO-vb ・[P/(l×βT))・・
・■ Here, Ko is a constant, vb is the bridge voltage applied to pressure sensor element 1, P is the pressure applied to pressure sensor element 1, β is the temperature coefficient of pressure sensor element 1, and T is the ambient temperature of pressure sensor element 1. It is.
上記式■に基づくスパン電圧（Ｖｓｐａｎ）の温度特性
を第３図に示している。第３図において、横軸は温度（
Ｔ’Ｃ）であり、縦軸はスパン電圧（Ｖｓｐａｎ）であ
る。この第３図の温度特性から明らかなように、スパン
電圧（Ｖ ５ｐａｎ）は負の温度係数を有している。FIG. 3 shows the temperature characteristics of the span voltage (Vspan) based on the above formula (2). In Figure 3, the horizontal axis is the temperature (
T'C), and the vertical axis is the span voltage (Vspan). As is clear from the temperature characteristics shown in FIG. 3, the span voltage (V5pan) has a negative temperature coefficient.
したがって、このような負の温度係数を有するスパン電
圧（Ｖｓｐａｎ）に対し、周囲温度の変化の影響を受け
ることなく、圧力センサが圧力を精度良く検知できるよ
うに、その温度補償を行うには、式■の分母における（
ｌ＋βＴ）を打ち消すとよいことになる。Therefore, in order to perform temperature compensation for the span voltage (Vspan) having such a negative temperature coefficient so that the pressure sensor can accurately detect pressure without being affected by changes in ambient temperature, it is necessary to In the denominator of the formula ■ (
It is better to cancel l+βT).
ここで、オペレーショナルアンプ２のゲイン（Ａ）は次
式■であられされる。Here, the gain (A) of the operational amplifier 2 is expressed by the following equation (2).
Ａ＝ｒｆ／ｒｓ＝ｒｆｏ（１＋αＴ）／ｒｓ・・・■
ただし、ｒｆ ＝ｒｆｏ（１＋αＴ）であって、ｒｆは
負帰還抵抗Ｒｆの抵抗値、ｒｓは入力抵抗Ｒｓの抵抗値
、ｒｆｏは負帰還抵抗Ｒｆの周囲温度２５℃における抵
抗値、αは負帰還抵抗Ｒｆの温度係数、Ｔは周囲温度で
ある。A=rf/rs=rfo(1+αT)/rs...■ However, rf = rfo(1+αT), where rf is the resistance value of the negative feedback resistor Rf, rs is the resistance value of the input resistor Rs, and rfo is the negative The resistance value of the feedback resistor Rf at an ambient temperature of 25° C., α is the temperature coefficient of the negative feedback resistor Rf, and T is the ambient temperature.
したがって、式■および■からスパン電圧（Ｖｓｐａｎ
）は、オペレーショナルアンプ２で増幅される結果、次
式■の増幅電圧（Ｖ）になる。Therefore, from equations ■ and ■, the span voltage (Vspan
) is amplified by the operational amplifier 2, resulting in an amplified voltage (V) of the following formula (2).
Ｖ＝Ｖｓｐａｎ−Ａ
＝Ｋｏ −Ｖｂ ・ＣＰ／（１＋βＴ））ｘ（Ｒｆ ｏ
（１＋αＴ）／Ｒｓ ）・・・■
式■から明らかなように、スパン電圧（Ｖｓｐａｎ）の
温度補償を行って圧力センサそのものが温度変化の影響
をうけることなく圧力を検知できるようにするには、圧
力センサ素子ｌの負の温度係数（ｌ＋βＴ）を、オペレ
ーショナルアンプ２の負帰還抵抗Ｒｆの正の温度係数（
ｌ＋αＴ）で打ち消す、つまりβ＝αであるとよいこと
になる。V=Vspan-A=Ko-Vb ・CP/(1+βT))x(Rf o
(1+αT)/Rs )...■ As is clear from formula ■, in order to perform temperature compensation on the span voltage (Vspan) so that the pressure sensor itself can detect pressure without being affected by temperature changes, , the negative temperature coefficient (l+βT) of the pressure sensor element l is expressed as the positive temperature coefficient (l+βT) of the negative feedback resistance Rf of the operational amplifier 2.
l+αT), that is, β=α.
その打ち消しを行うために、第２図に示されるような圧
力センサが既に提案されている。In order to cancel this, a pressure sensor as shown in FIG. 2 has already been proposed.
第２図の圧力センサにおいては、オペレーショナルアン
プ２の負帰還抵抗Ｒｆを、厚膜抵抗Ｒａと、拡散抵抗Ｒ
ｂとの合成抵抗Ｒｘで構成している。この厚膜抵抗Ｒａ
は、抵抗値が固定のものであり、拡散抵抗Ｒｂはオペレ
ーショナルアンプ２の差動増幅回路ＡＭＰと同一の半導
体基板において形成されたものである。In the pressure sensor shown in FIG. 2, the negative feedback resistor Rf of the operational amplifier 2 is replaced by a thick film resistor Ra and a diffused resistor R.
It is composed of a combined resistance Rx with b. This thick film resistance Ra
has a fixed resistance value, and the diffused resistor Rb is formed on the same semiconductor substrate as the differential amplifier circuit AMP of the operational amplifier 2.
この厚膜抵抗Ｒａと拡散抵抗Ｒｈとの合成抵抗Ｒｘの抵
抗値（ｒｘ）は次式■であられされる。The resistance value (rx) of the combined resistance Rx of the thick film resistor Ra and the diffused resistor Rh is given by the following equation (2).
ｒ ｘ ＝１／（（１／ｒ ａ ） ＋（１／ｒ ｂ
） ）＝ｎ ｒ ｂ ｏ （１＋ａＴ） ／（１＋ｎ
＋ａＴ）＝ｒｘｏ（１＋α’ Ｔ）
・・・■
ここで、ｒａ＝ｎ−ｒｂｏ、
ｒｂ ＝ｒｂｏ（１＋αＴ）
ｒａは厚膜抵抗Ｒａの抵抗値、ｒｂは拡散抵抗Ｒｈの抵
抗値、ｎは定数、ｒｂｏは拡散抵抗Ｒｈの特定温度２５
℃での抵抗値、αは拡散抵抗Ｒｈの温度係数、ｒｘは合
成抵抗ＲＸの抵抗値、ｒＸＯは合成抵抗Ｒｘの特定温度
２５℃での抵抗値、α′は合成抵抗ＲＸの温度係数であ
る。r x = 1/((1/ra) + (1/r b
) )=n r b o (1+aT) /(1+n
+aT)=rxo(1+α'T)...■ Here, ra=n-rbo, rb=rbo(1+αT) ra is the resistance value of the thick film resistor Ra, rb is the resistance value of the diffused resistor Rh, and n is a constant , rbo is the specific temperature 25 of the diffused resistance Rh
The resistance value at °C, α is the temperature coefficient of the diffused resistance Rh, rx is the resistance value of the combined resistance RX, rXO is the resistance value of the combined resistance Rx at a specific temperature of 25°C, α' is the temperature coefficient of the combined resistance RX .
上記式■において、厚膜抵抗Ｒａ、拡散抵抗Ｒｂ、およ
び合成抵抗Ｒｘそれぞれの温度特性を第４図に示してい
る。第４図において、横軸は温度（℃）、縦軸は各抵抗
の抵抗値である。そして、第４図中のＲａは厚膜抵抗Ｒ
ａの温度特性、Ｒｂは拡散抵抗Ｒｂの温度特性、Ｒｘは
合成抵抗Ｒｘの温度特性を、それぞれ、示している。In the above formula (2), the temperature characteristics of the thick film resistor Ra, the diffused resistor Rb, and the combined resistor Rx are shown in FIG. In FIG. 4, the horizontal axis is temperature (° C.), and the vertical axis is the resistance value of each resistor. Ra in FIG. 4 is a thick film resistance R
Rb indicates the temperature characteristic of the diffused resistance Rb, and Rx indicates the temperature characteristic of the combined resistance Rx.
第３図のスパン電圧（Ｖｓｐａｎ）の温度特性と、第４
図の合成抵抗Ｒｘの温度特性とから明らかなように、ス
パン電圧（Ｖ ５ｐａｎ）の温度補償を行うには、β−
α′であるとよいことになる。The temperature characteristics of the span voltage (Vspan) in Fig. 3 and the
As is clear from the temperature characteristics of the combined resistance Rx in the figure, in order to perform temperature compensation for the span voltage (V 5pan), β-
It is good if α′.
そこで、従来から、βが既知であること、拡散抵抗Ｒｈ
の抵抗値ｒｂ ＝ｒｂｏ（１＋αＴ）も既知であること
から、β＝α′となるようなｎの値を求めて厚膜抵抗Ｒ
ａの抵抗値ｒａ（−ｎ−ｒｂＯ）を算出したうえで、厚
膜抵抗Ｒａの抵抗値をその算出に従ったものとして、ス
パン電圧（Ｖｓｐａｎ）の温度補償を行っていた。Therefore, it has been conventionally known that β is known and that the diffusion resistance Rh
Since the resistance value rb = rbo (1 + αT) is also known, the value of n such that β = α' is found and the thick film resistor R
After calculating the resistance value ra (-n-rbO) of a, temperature compensation of the span voltage (Vspan) is performed by setting the resistance value of the thick film resistor Ra to be in accordance with the calculation.
（発明が解決しようとする課題）
しかしながら、厚膜抵抗Ｒａの抵抗値は固定値であるこ
とから、オペレーショナルアンプ２の拡散抵抗Ｒｈの抵
抗値が変化した場合では、スパン電圧（Ｖｓｐａｎ）の
最適な温度補償を行うことができない。(Problem to be Solved by the Invention) However, since the resistance value of the thick film resistor Ra is a fixed value, when the resistance value of the diffused resistor Rh of the operational amplifier 2 changes, the optimal span voltage (Vspan) Temperature compensation cannot be performed.
本発明は、拡散抵抗の抵抗値が変化しても、スパン電圧
に対する最適な温度補償を行うことができるようにする
ことを目的としている。An object of the present invention is to enable optimal temperature compensation for span voltage even if the resistance value of a diffused resistor changes.
（課題を解決するための手段）
このような目的を達成するために、本発明の半導体拡散
抵抗形座カセンサにおけるスパン電圧温度補償方法にお
いては、圧力センサ素子と、オペレーショナルアンプと
を備え、圧力センサ素子は、負の温度係数を有するスパ
ン電圧を出力するものであり、オペレーショナルアンプ
は、負帰還抵抗を具備し、該負帰還抵抗は、厚膜抵抗と
拡散抵抗との合成抵抗で構成されており、該合成抵抗は
、正の温度係数を有してなる半導体拡散抵抗膨圧力セン
サにおいて、
該半導体圧力センサの製造ロット毎に、前記拡散抵抗の
温度特性の先行評価を行って該拡散抵抗の抵抗値と温度
係数とを算出するとともに、この拡散抵抗の抵抗値と温
度係数とから、前記合成抵抗の温度係数が、前記スパン
電圧の温度係数に対応したものとなるように、厚膜抵抗
の抵抗値を決定することを特徴としている。(Means for Solving the Problem) In order to achieve such an object, the span voltage temperature compensation method for a semiconductor diffused resistance type seat sensor of the present invention includes a pressure sensor element and an operational amplifier, and a pressure sensor element and an operational amplifier are provided. The element outputs a span voltage having a negative temperature coefficient, and the operational amplifier is equipped with a negative feedback resistor, and the negative feedback resistor is composed of a combined resistance of a thick film resistor and a diffused resistor. , the combined resistance is determined by performing a preliminary evaluation of the temperature characteristics of the diffused resistor for each production lot of the semiconductor pressure sensor in a semiconductor diffused resistor expansion pressure sensor having a positive temperature coefficient. In addition to calculating the resistance value and temperature coefficient of the diffused resistance, the resistance of the thick film resistor is calculated so that the temperature coefficient of the composite resistance corresponds to the temperature coefficient of the span voltage. It is characterized by determining the value.
（作用）
上記においては、半導体圧力センサの製造ロッド毎に、
拡散抵抗の温度特性の先行評価を行って該拡散抵抗の抵
抗値と温度係数とを算出するとともに、この拡散抵抗の
抵抗値と温度係数とから、前記合成抵抗の温度係数が、
前記スパン電圧の温度係数に対応したものとなるように
、厚膜抵抗の抵抗値を決定するから、拡散抵抗の抵抗値
が変化しても、製造ロット単位では、厚膜抵抗の抵抗値
を、その拡散抵抗の抵抗値の変化に対応設定できるから
、拡散抵抗の抵抗値変化に対するスパン電圧の温度補償
に対する誤差を小さく抑え、高精度での温度補償が可能
となる。(Function) In the above, for each manufacturing rod of the semiconductor pressure sensor,
A preliminary evaluation of the temperature characteristics of the diffused resistor is performed to calculate the resistance value and temperature coefficient of the diffused resistor, and from the resistance value and temperature coefficient of the diffused resistor, the temperature coefficient of the composite resistance is
Since the resistance value of the thick film resistor is determined in such a way that it corresponds to the temperature coefficient of the span voltage, even if the resistance value of the diffused resistor changes, the resistance value of the thick film resistor can be changed for each manufacturing lot. Since the settings can be made in response to changes in the resistance value of the diffused resistor, errors in span voltage temperature compensation for changes in the resistance value of the diffused resistor can be suppressed to a small level, making it possible to perform temperature compensation with high accuracy.
（実施例） 以下、本発明の実施例の方法を詳細に説明する。(Example) Hereinafter, methods of embodiments of the present invention will be described in detail.
本発明のスパン電圧温度補償方法においては、第２図の
圧力センサに適用するものである。この圧力センサは、
前述のように、圧力センサ素子ｌと、オペレーショナル
アンプ２とを備えている。The span voltage temperature compensation method of the present invention is applied to the pressure sensor shown in FIG. This pressure sensor is
As described above, it includes a pressure sensor element 1 and an operational amplifier 2.
圧力センサ素子ｌは、負の温度係数を有するスパン電圧
（ｖｓｐａｎ）を出力する。オペレーショナルアンプ２
は、負帰還抵抗Ｒｆとして、厚膜抵抗Ｒａと拡散抵抗Ｒ
ｈとの合成抵抗ＲＸで構成されている。合成抵抗Ｒｘは
、上記式■のように、正の温度係数（ｌ＋α’Ｔ）を有
しており、前述のように、スパン電圧（Ｖｓｐａｎ）に
対する温度補償は、圧力センサ素子ｌの温度係数（β）
−合成抵抗ＲＸの温度係数（α′）が成立するとよいこ
とになる。The pressure sensor element l outputs a span voltage (vspan) with a negative temperature coefficient. Operational amplifier 2
is a thick film resistor Ra and a diffused resistor R as a negative feedback resistor Rf.
h and a combined resistance RX. The combined resistance Rx has a positive temperature coefficient (l+α'T) as shown in the above equation (2), and as mentioned above, the temperature compensation for the span voltage (Vspan) is determined by the temperature coefficient ( β)
- It is good if the temperature coefficient (α') of the combined resistance RX holds true.
そして、本発明においては、半導体拡散抵抗形座カセン
サの製造ロッド毎に、拡散抵抗Ｒｈの温度特性の先行評
価を行って該拡散抵抗Ｒｂの抵抗値（ｒｂ）と温度係数
（α）とを算出するとともに、この拡散抵抗Ｒｂの抵抗
値（ｒｂ）と温度係数（α）とから、前記合成抵抗ＲＸ
の温度係数（α′）が、スパン電圧（Ｖｓｐａｎ）の温
度係数（β）に対応したものとなるように、厚膜抵抗（
Ｒａ）の抵抗値（ｒ ａ）を決定するようにしている。In the present invention, for each production rod of the semiconductor diffused resistance type seat sensor, a preliminary evaluation of the temperature characteristics of the diffused resistance Rh is performed, and the resistance value (rb) and temperature coefficient (α) of the diffused resistance Rb are calculated. At the same time, from the resistance value (rb) and temperature coefficient (α) of this diffused resistance Rb, the composite resistance RX
The thick film resistor (
The resistance value (ra) of the resistance (Ra) is determined.
このような先行評価は半導体拡散抵抗形座カセンサの製
造ロッド毎に行うから、各製造ロッド毎に最適の温度補
償が可能となる。Since such preliminary evaluation is performed for each manufacturing rod of the semiconductor diffused resistance type seat sensor, optimum temperature compensation can be performed for each manufacturing rod.
（発明の効果）
以上説明したことから明らかなように本発明によれば、
半導体圧力センサの製造ロット毎に、拡散抵抗の温度特
性の先行評価を行って該拡散抵抗の抵抗値と温度係数と
を算出し、この拡散抵抗の抵抗値と温度係数とから、前
記合成抵抗の温度係数が前記スパン電圧の温度係数に対
応したものとなるように、厚膜抵抗の抵抗値を決定する
ようにしたから、拡散抵抗の抵抗値が変化しても、製造
ロッド単位では、厚膜抵抗の抵抗値を、その拡散抵抗の
抵抗値の変化に対応設定でき、結果として、拡散抵抗の
抵抗値変化に対するスパン電圧の温度補償に対する誤差
を小さく抑え、高精度で最適な温度補償を行うことが可
能となる。(Effects of the Invention) As is clear from the above explanation, according to the present invention,
For each production lot of semiconductor pressure sensors, the temperature characteristics of the diffused resistor are evaluated in advance to calculate the resistance value and temperature coefficient of the diffused resistor, and from the resistance value and temperature coefficient of the diffused resistor, the combined resistance is calculated. Since the resistance value of the thick film resistor is determined so that the temperature coefficient corresponds to the temperature coefficient of the span voltage, even if the resistance value of the diffused resistor changes, the thick film The resistance value of the resistor can be set in response to the change in the resistance value of the diffused resistor, and as a result, the error in temperature compensation of the span voltage for the change in the resistance value of the diffused resistor can be suppressed to a small level, and optimal temperature compensation can be performed with high accuracy. becomes possible.
第１図は圧力センサの回路図、第２図はスパン電圧の温
度補償を施しである従来の圧力センサの回路図、第３図
は温度に対するスパン電圧の温度特性を示す図、第４図
は温度に対する厚膜抵抗、拡散抵抗、および合成抵抗そ
れぞれの温度特性を示す図である。
１・・・圧力センサ素子、２・・・オペレーショナルア
ンプ、Ｒａ・・・厚膜抵抗、Ｒｂ・・・拡散抵抗、Ｒｘ
・・・合成抵抗。
図中、
同一符号は同一ないしは相当部分を示Figure 1 is a circuit diagram of a pressure sensor, Figure 2 is a circuit diagram of a conventional pressure sensor with span voltage temperature compensation, Figure 3 is a diagram showing the temperature characteristics of span voltage versus temperature, and Figure 4 is a diagram showing the temperature characteristics of span voltage with respect to temperature. FIG. 2 is a diagram showing the temperature characteristics of a thick film resistor, a diffused resistor, and a composite resistor with respect to temperature. 1... Pressure sensor element, 2... Operational amplifier, Ra... Thick film resistor, Rb... Diffused resistor, Rx
...Combined resistance. In the figures, the same symbols indicate the same or equivalent parts.
Claims (1)
備え、圧力センサ素子は、負の温度係数を有するスパン
電圧を出力するものであり、オペレーショナルアンプは
、負帰還抵抗を具備し、該負帰還抵抗は、厚膜抵抗と拡
散抵抗との合成抵抗で構成されており、該合成抵抗は、
正の温度係数を有してなる半導体拡散抵抗形圧力センサ
において、該半導体圧力センサの製造ロッド毎に、前記
拡散抵抗の温度特性の先行評価を行って該拡散抵抗の抵
抗値と温度係数とを算出するとともに、この拡散抵抗の
抵抗値と温度係数とから、前記合成抵抗の温度係数が、
前記スパン電圧の温度係数に対応したものとなるように
、厚膜抵抗の抵抗値を決定することを特徴とする半導体
拡散抵抗形圧力センサにおけるスパン電圧温度補償方法
。(1) Comprising a pressure sensor element and an operational amplifier, the pressure sensor element outputs a span voltage having a negative temperature coefficient, the operational amplifier includes a negative feedback resistor, and the negative feedback resistor , is composed of a composite resistance of a thick film resistor and a diffused resistor, and the composite resistance is
In a semiconductor diffused resistance type pressure sensor having a positive temperature coefficient, a preliminary evaluation of the temperature characteristics of the diffused resistor is performed for each manufacturing rod of the semiconductor pressure sensor, and the resistance value and temperature coefficient of the diffused resistor are determined. In addition to calculating, from the resistance value and temperature coefficient of this diffused resistance, the temperature coefficient of the composite resistance is
A span voltage temperature compensation method in a semiconductor diffusion resistance type pressure sensor, characterized in that the resistance value of the thick film resistor is determined so as to correspond to the temperature coefficient of the span voltage.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10271490A JPH042170A (en) | 1990-04-18 | 1990-04-18 | Temperature compensation method for span voltage of semiconductor diffused resistor type of pressure sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10271490A JPH042170A (en) | 1990-04-18 | 1990-04-18 | Temperature compensation method for span voltage of semiconductor diffused resistor type of pressure sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH042170A true JPH042170A (en) | 1992-01-07 |
Family
ID=14334937
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10271490A Pending JPH042170A (en) | 1990-04-18 | 1990-04-18 | Temperature compensation method for span voltage of semiconductor diffused resistor type of pressure sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH042170A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0856726A1 (en) * | 1997-01-30 | 1998-08-05 | TEMIC TELEFUNKEN microelectronic GmbH | Method of temperature compensation in mesuring systems |
| US6724202B2 (en) | 2000-11-10 | 2004-04-20 | Denso Corporation | Physical quantity detection device with temperature compensation |
| CN103278269A (en) * | 2013-04-24 | 2013-09-04 | 武汉航空仪表有限责任公司 | Temperature compensation method for high accuracy pressure transmitter |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56145327A (en) * | 1980-04-15 | 1981-11-12 | Fuji Electric Co Ltd | Pressure transducer |
| JPS5844303A (en) * | 1981-09-09 | 1983-03-15 | Hitachi Ltd | Semiconductor strain gauge |
-
1990
- 1990-04-18 JP JP10271490A patent/JPH042170A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56145327A (en) * | 1980-04-15 | 1981-11-12 | Fuji Electric Co Ltd | Pressure transducer |
| JPS5844303A (en) * | 1981-09-09 | 1983-03-15 | Hitachi Ltd | Semiconductor strain gauge |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0856726A1 (en) * | 1997-01-30 | 1998-08-05 | TEMIC TELEFUNKEN microelectronic GmbH | Method of temperature compensation in mesuring systems |
| US5926778A (en) * | 1997-01-30 | 1999-07-20 | Temic Telefunken Microelectronic Gmbh | Method for temperature compensation in measuring systems |
| US6724202B2 (en) | 2000-11-10 | 2004-04-20 | Denso Corporation | Physical quantity detection device with temperature compensation |
| CN103278269A (en) * | 2013-04-24 | 2013-09-04 | 武汉航空仪表有限责任公司 | Temperature compensation method for high accuracy pressure transmitter |
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