JPH0421972U - - Google Patents
Info
- Publication number
- JPH0421972U JPH0421972U JP6265290U JP6265290U JPH0421972U JP H0421972 U JPH0421972 U JP H0421972U JP 6265290 U JP6265290 U JP 6265290U JP 6265290 U JP6265290 U JP 6265290U JP H0421972 U JPH0421972 U JP H0421972U
- Authority
- JP
- Japan
- Prior art keywords
- measuring
- evaluation probe
- ground electrode
- fet
- signal line
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000011156 evaluation Methods 0.000 claims description 3
- 239000000523 sample Substances 0.000 claims description 3
- 239000000919 ceramic Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
- 238000000034 method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
Landscapes
- Measuring Leads Or Probes (AREA)
Description
第１図ａはこの考案の一実施例によるＲＦ評価
用プローブを適用しようとするＦＥＴパターンを
示す図、第１図ｂは上記実施例のＲＦ測定装置の
裏面を示す裏面図、第２図は上記実施例の測定装
置を用いてＦＥＴのＲＦ特性を測定する方法を示
す図、第３図は上記と同様に測定する方法を示す
斜視図、第４図はセラミツク基板とウエハ上の信
号線の断面図、第５図は従来のＦＥＴの測定装置
および方法を説明する平面図である。
図において、１はＦＥＴ、２，３は信号線路、
４は接地電極、５はＲＦプローバの信号線路、６
はＲＦプローバの接地電極、７はウエハである。
なお図中同一符号は同一又は相当部分を示す。
FIG. 1a is a diagram showing an FET pattern to which an RF evaluation probe according to an embodiment of the present invention is applied, FIG. A diagram showing a method of measuring the RF characteristics of an FET using the measuring device of the above embodiment, FIG. 3 is a perspective view showing a method of measuring in the same manner as above, and FIG. The cross-sectional view and FIG. 5 are plan views illustrating a conventional FET measuring device and method. In the figure, 1 is an FET, 2 and 3 are signal lines,
4 is the ground electrode, 5 is the signal line of the RF prober, 6
is a ground electrode of the RF prober, and 7 is a wafer.
Note that the same reference numerals in the figures indicate the same or equivalent parts.
Claims (1)
において、 セラミツク基板上に形成された、先端がＬ字形
に曲がつている信号線と、接地電極とを有し、ウ
エハ上で素子のＲＦ特性を測定することを特徴と
するＲＦ評価用プローブ。[Claims for Utility Model Registration] An RF evaluation probe for measuring the RF characteristics of an element, which has a signal line formed on a ceramic substrate, the tip of which is bent into an L-shape, and a ground electrode. An RF evaluation probe characterized in that it measures the RF characteristics of an element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6265290U JPH0421972U (en) | 1990-06-12 | 1990-06-12 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6265290U JPH0421972U (en) | 1990-06-12 | 1990-06-12 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0421972U true JPH0421972U (en) | 1992-02-24 |
Family
ID=31591999
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6265290U Pending JPH0421972U (en) | 1990-06-12 | 1990-06-12 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0421972U (en) |
-
1990
- 1990-06-12 JP JP6265290U patent/JPH0421972U/ja active Pending