JPH0423443B2 - - Google Patents

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Publication number
JPH0423443B2
JPH0423443B2 JP62038274A JP3827487A JPH0423443B2 JP H0423443 B2 JPH0423443 B2 JP H0423443B2 JP 62038274 A JP62038274 A JP 62038274A JP 3827487 A JP3827487 A JP 3827487A JP H0423443 B2 JPH0423443 B2 JP H0423443B2
Authority
JP
Japan
Prior art keywords
circuit
transistor
agc
smoothing capacitor
signal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP62038274A
Other languages
Japanese (ja)
Other versions
JPS63204916A (en
Inventor
Sakae Sugayama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP3827487A priority Critical patent/JPS63204916A/en
Publication of JPS63204916A publication Critical patent/JPS63204916A/en
Publication of JPH0423443B2 publication Critical patent/JPH0423443B2/ja
Granted legal-status Critical Current

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  • Control Of Amplification And Gain Control (AREA)

Description

【発明の詳細な説明】 (イ) 産業上の利用分野 本発明は、AMラジオ受信機のRF増幅回路の
利得を自動的に制御することが出来るRF AGC
回路に関するもので、特に受信信号の電界強度の
急変に対処し得るRF AGC回路に関する。
[Detailed Description of the Invention] (a) Industrial Application Field The present invention provides an RF AGC that can automatically control the gain of an RF amplification circuit of an AM radio receiver.
It relates to circuits, and in particular to RF AGC circuits that can cope with sudden changes in the electric field strength of received signals.

(ロ) 従来の技術 昭和60年3月20日付で発行された「’85三洋半
導体ハンドブツクモノリシツクバイポーラ集積回
路」編第84頁には、混合回路から得られる制御信
号に応じてRF増幅回路の利得を制御するRF
AGC回路が記載されている。前記RF AGC回路
は、第2図に示す如く、アンテナ1に受信された
受信信号がベースに印加されるFET2と、エミ
ツタが該FET2のドレインに接続されたAGCト
ランジスタ3と、該トランジスタ3のコレクタに
接続された選択同調回路4と、該同調回路4から
得られるRF信号と局部発振回路(図示せず)か
ら得られる局部発振信号とを混合してIF信号を
発生する信号回路5と、該混合回路5から得られ
るIF信号のレベルを検出し、利得制御信号を発
生するAGC信号発生回路6と、前記利得制御信
号に応じて前記AGCトランジスタ3を駆動する
AGC駆動回路とを備えている。第2図の回路
の場合、アンテナ1に受信される受信信号が強電
界であると、FET2で増幅され、AGCトランジ
スタ3及び選択同調回路4を介して混合回路5に
印加されるRF信号及び前記混合回路5から発生
するIF信号のレベルが大になる。その為、AGC
信号発生回路6から発生する利得制御信号も大と
なり、AGC駆動回路を構成するトランジスタ
8及び9に流れる電流が増大する。その結果、平
滑コンデンサ10が放電され、AGCトランジス
タ3のベース電圧が低下し、RF増幅回路の利得
が低下する。
(b) Prior art On page 84 of the '85 Sanyo Semiconductor Handbook Monolithic Bipolar Integrated Circuits, published on March 20, 1985, there is a description of how an RF amplifier circuit operates in response to a control signal obtained from a mixing circuit. RF controlling gain
AGC circuit is described. As shown in FIG. 2, the RF AGC circuit includes a FET 2 to which the received signal received by the antenna 1 is applied to the base, an AGC transistor 3 whose emitter is connected to the drain of the FET 2, and a collector of the transistor 3. a selective tuning circuit 4 connected to the tuning circuit 4; a signal circuit 5 that generates an IF signal by mixing the RF signal obtained from the tuning circuit 4 and the local oscillation signal obtained from a local oscillation circuit (not shown); An AGC signal generation circuit 6 detects the level of the IF signal obtained from the mixing circuit 5 and generates a gain control signal, and drives the AGC transistor 3 according to the gain control signal.
The AGC drive circuit 7 is also provided. In the case of the circuit shown in FIG. 2, when the received signal received by the antenna 1 has a strong electric field, the RF signal is amplified by the FET 2 and applied to the mixing circuit 5 via the AGC transistor 3 and the selective tuning circuit 4. The level of the IF signal generated from the mixing circuit 5 increases. Therefore, AGC
The gain control signal generated from the signal generation circuit 6 also increases, and the current flowing through the transistors 8 and 9 forming the AGC drive circuit 7 increases. As a result, the smoothing capacitor 10 is discharged, the base voltage of the AGC transistor 3 decreases, and the gain of the RF amplifier circuit decreases.

また、アンテナ1に受信される受信信号が弱電
界の場合は、AGC信号発生回路6から発生する
利得制御信号が小になり、トランジスタ8及び9
に流れる電流が減少し又は零となるので、充電抵
抗11による平滑コンデンサ10の充電が行なわ
れ、RF増幅回路の利得が増大する。従つて、第
2図の回路を用いれば、RF増幅回路の利得を自
動的に制御することが出来る。
Further, when the received signal received by the antenna 1 has a weak electric field, the gain control signal generated from the AGC signal generation circuit 6 becomes small, and the transistors 8 and 9
Since the current flowing through the RF amplifier circuit decreases or becomes zero, the smoothing capacitor 10 is charged by the charging resistor 11, and the gain of the RF amplifier circuit increases. Therefore, by using the circuit shown in FIG. 2, the gain of the RF amplifier circuit can be automatically controlled.

(ハ) 発明が解決しようとする問題点 RF AGC回路の安定性を高める為には、平滑
コンデンサ10及び12の容量を大としなければ
ならない。しかしながら、特に平滑コンデンサ1
0の容量を大にすると、充電抵抗11の抵抗値と
平滑コンデンサ10の容量とで決まる時定数が大
きくなり、前記平滑コンデンサ10の充電時間が
長くなる。その為、カーラジオ等の移動受信機に
あつては、強電界の受信状態から弱電界の受信状
態に受信状態が急激に変化すると、前記平滑コン
デンサ10の充電が追随せず、音切れが生じると
いう大きな問題が生じていた。
(c) Problems to be Solved by the Invention In order to improve the stability of the RF AGC circuit, the capacitance of the smoothing capacitors 10 and 12 must be increased. However, especially smoothing capacitor 1
When the capacitance of the smoothing capacitor 10 is increased, the time constant determined by the resistance value of the charging resistor 11 and the capacitance of the smoothing capacitor 10 becomes large, and the charging time of the smoothing capacitor 10 becomes longer. Therefore, in the case of a mobile receiver such as a car radio, when the reception state suddenly changes from a reception state of a strong electric field to a reception state of a weak electric field, the charge of the smoothing capacitor 10 cannot keep up, resulting in sound interruptions. A big problem had arisen.

(ニ) 問題点を解決するための手段 本発明は、上述の点に鑑み成されたもので、受
信信号の電界強度が強から弱に変化したとき、前
記変化に応じてAGC回路を構成する平滑コンデ
ンサを急速充電する急速充電回路を備える点を特
徴とする。
(d) Means for Solving Problems The present invention has been made in view of the above points, and when the electric field strength of a received signal changes from strong to weak, an AGC circuit is configured in accordance with the change. It is characterized by a quick charging circuit that quickly charges the smoothing capacitor.

(ホ) 作用 本発明に依れば、受信信号の電界強度が強から
弱に変化したとき、急速充電回路を動作させ、平
滑コンデンサを急速充電しているので、前記平滑
コンデンサとして大容量のものを使用しても、そ
の端子電圧を急激に大とすることが出来、RF増
幅回路の利得を素早く大にすることが出来る。
(E) Effect According to the present invention, when the electric field strength of the received signal changes from strong to weak, the quick charging circuit is activated and the smoothing capacitor is rapidly charged. Even when using a RF amplifier, the terminal voltage can be increased rapidly, and the gain of the RF amplifier circuit can be quickly increased.

(ヘ) 実施例 第1図は、本発明の一実施例を示すもので、1
3はAGC信号発生回路6から得られる受信信号
が強電界から弱電界へ変化したことを示す信号に
応じて動作する急速充電回路である。尚、第1図
において、第2図と同一の回路素子には同一の符
号を付し説明を省略する。
(F) Embodiment FIG. 1 shows an embodiment of the present invention.
3 is a quick charging circuit that operates in response to a signal indicating that the received signal obtained from the AGC signal generation circuit 6 has changed from a strong electric field to a weak electric field. In FIG. 1, circuit elements that are the same as those in FIG. 2 are designated by the same reference numerals, and their explanations will be omitted.

強電界の信号を受信しているとき、AGC信号
発生回路6の出力信号が大になり、トランジスタ
8のコレクタ電流が増大する。前記トランジスタ
8はトランジスタ9と電流ミラー関係に接続され
ているので、前記トランジスタ9のコレクタ電流
も大になる。その為、平滑コンデンサ10の放電
が行なわれ、その端子電圧が低下し、AGCトラ
ンジスタ3の導通度が大きく低下する。従つて、
RF増幅回路の利得が制御されることになり、混
合回路5の出力信号のレベルは略一定に保たれ
る。強電界受信状態が継続すると、平滑コンデン
サ10の放電が継続し、その端子電圧が大幅に低
下する。
When a strong electric field signal is being received, the output signal of the AGC signal generation circuit 6 increases, and the collector current of the transistor 8 increases. Since the transistor 8 is connected to the transistor 9 in a current mirror relationship, the collector current of the transistor 9 also becomes large. Therefore, the smoothing capacitor 10 is discharged, its terminal voltage decreases, and the degree of conductivity of the AGC transistor 3 decreases significantly. Therefore,
The gain of the RF amplifier circuit is controlled, and the level of the output signal of the mixing circuit 5 is kept substantially constant. If the strong electric field reception state continues, the smoothing capacitor 10 continues to discharge, and its terminal voltage decreases significantly.

その状態で、受信信号の電界強度が弱に変化す
ると、弱電界の受信信号は利得の低下した状態の
RF増幅回路で増幅されることになり、混合回路
5の出力信号レベルが低下する。その為、AGC
信号発生回路6の出力信号が小となり、トランジ
スタ8及び9のコレクタ電流も小となる。前記ト
ランジスタ9のコレクタ電流が小になると、充電
抵抗11により平滑コンデンサ10の充電が行な
われる様になるが、充電時定数が大の為、前記平
滑コンデンサ10の端子電圧を急激に大とするこ
とは出来ない。一方、AGC信号発生回路6の出
力信号が大から小に急激に変化すると、その変化
に応じて急速充電回路13が動作を開始する。前
記急速充電回路13の比較的大きな出力電流は、
平滑コンデンサ10を急速に充電する為、その端
子電圧が直ちに上昇し、AGCトランジスタ3の
導通度を大にする。その為、RF増幅回路の利得
が増大し、弱電界の受信信号を十分に増幅する様
になり、混合回路5の出力信号が十分なレベルに
なつて、音切れが防止される。急速充電回路13
は、動作を開始した後所定時間経過すると不動作
状態となるので、通常のAGC動作に悪影響を与
えることは無い。
In this state, if the electric field strength of the received signal changes weakly, the received signal in the weak electric field will become a state with a reduced gain.
The signal is amplified by the RF amplifier circuit, and the output signal level of the mixing circuit 5 decreases. Therefore, AGC
The output signal of the signal generation circuit 6 becomes small, and the collector currents of the transistors 8 and 9 also become small. When the collector current of the transistor 9 becomes small, the smoothing capacitor 10 is charged by the charging resistor 11, but since the charging time constant is large, the terminal voltage of the smoothing capacitor 10 must be suddenly increased. I can't. On the other hand, when the output signal of the AGC signal generation circuit 6 suddenly changes from large to small, the quick charging circuit 13 starts operating in response to the change. The relatively large output current of the quick charging circuit 13 is
Since the smoothing capacitor 10 is rapidly charged, its terminal voltage immediately rises, increasing the conductivity of the AGC transistor 3. Therefore, the gain of the RF amplifier circuit increases, and the weak electric field received signal is sufficiently amplified, and the output signal of the mixing circuit 5 reaches a sufficient level, thereby preventing sound breakage. Quick charging circuit 13
Since it becomes inactive after a predetermined period of time has passed after starting operation, it does not adversely affect normal AGC operation.

第3図は、本発明の具体回路例を示すもので、
混合回路5から入力端子14に電界強度に応じた
レベルを有する入力信号が印加されると、前記入
力信号はダイオード15及び16によりレベル検
波され、平滑コンデンサ17で平滑される。ベー
スが前記平滑コンデンサ17に接続された第1ト
ランジスタ18は、前記平滑コンデンサ17の端
子電圧に応じたエミツタ電流を発生し、第2トラ
ンジスタ19に入力信号に応じた検波電流を流
す。第3乃至第5トランジスタ20乃至22から
成る電流ミラー回路は、前記第2トランジスタ1
9のコレクタ電流を反転する。コレクタが前記第
4及び第5トランジスタ21及び22のコレクタ
にそれぞれ接続された第6及び第7トランジスタ
23及び24は、ベースが共通に第8トランジス
タ25のエミツタに接続されており、所定の等し
い値のコレクタ電流を流す様に設定されている。
その為、第4及び第6トランジスタ21及び23
のコレクタ電流の差電流が後述する急速充電回路
の制御電流となり、第5及び第7トランジスタ2
2及び27のコレクタ電流の差電流が第9及び第
10トランジスタ26及び27から成る電流ミラー
回路28に供給される。いま、入力端子14に引
火される入力信号のレベルが大となり、第5トラ
ンジスタ22のコレクタ電流が第7トランジスタ
24のコレクタ電流よりも大になると、電流ミラ
ー回路28に電流が流れ、第10トランジスタ27
により平滑コンデンサ10の放電が行なわれ、
AGCトランジスタ3の導通度が低下し、RF増幅
回路の利得が低下する。逆に、入力端子14に印
加される入力信号のレベルが小となり、第5トラ
ンジスタ22のコレクタ電流が第7トランジスタ
24のコレクタ電流よりも小になると、電流ミラ
ー回路28がオフし、充電抵抗11により平滑コ
ンデンサ10の充電が行なわれ、RF増幅回路の
利得が増大する。従つて、レベル検波用のダイオ
ード15及び16と、平滑コンデンサ17及び1
0と、第1、第2、第3、第5及び第7トランジ
スタ18,19,20,22及び24と、電流ミ
ラー回路28と、AGCトランジスタ3とにより
AGC回路が構成され、RF増幅回路の利得制御が
行なわれる。
FIG. 3 shows a specific circuit example of the present invention.
When an input signal having a level corresponding to the electric field strength is applied from the mixing circuit 5 to the input terminal 14, the level of the input signal is detected by the diodes 15 and 16, and smoothed by the smoothing capacitor 17. A first transistor 18 whose base is connected to the smoothing capacitor 17 generates an emitter current corresponding to the terminal voltage of the smoothing capacitor 17, and causes a detection current corresponding to the input signal to flow through the second transistor 19. A current mirror circuit consisting of third to fifth transistors 20 to 22 includes the second transistor 1
9 collector current is reversed. The sixth and seventh transistors 23 and 24, whose collectors are connected to the collectors of the fourth and fifth transistors 21 and 22, respectively, have bases commonly connected to the emitter of the eighth transistor 25, and have predetermined equal values. The collector current is set to flow.
Therefore, the fourth and sixth transistors 21 and 23
The difference current between the collector currents becomes the control current of the quick charging circuit described later, and the difference current between the collector currents of the fifth and seventh transistors 2
The difference current between the collector currents of 2 and 27 is the 9th and 27th collector current.
A current mirror circuit 28 consisting of 10 transistors 26 and 27 is supplied. Now, when the level of the input signal ignited at the input terminal 14 becomes large and the collector current of the fifth transistor 22 becomes larger than the collector current of the seventh transistor 24, a current flows through the current mirror circuit 28 , and the current flows through the tenth transistor. 27
The smoothing capacitor 10 is discharged by
The conductivity of the AGC transistor 3 decreases, and the gain of the RF amplifier circuit decreases. Conversely, when the level of the input signal applied to the input terminal 14 becomes small and the collector current of the fifth transistor 22 becomes smaller than the collector current of the seventh transistor 24, the current mirror circuit 28 turns off and the charging resistor 11 As a result, the smoothing capacitor 10 is charged, and the gain of the RF amplifier circuit is increased. Therefore, level detection diodes 15 and 16 and smoothing capacitors 17 and 1
0, the first, second, third, fifth, and seventh transistors 18, 19, 20, 22, and 24, the current mirror circuit 28 , and the AGC transistor 3.
An AGC circuit is configured to perform gain control of the RF amplifier circuit.

ところで、第4トランジスタ21のコレクタ電
流が第6トランジスタ23のコレクタ電流よりも
大になる電界強度の信号を受信している間は、急
速充電回路29を構成する第11トランジスタ30
のベース電流が流れないので、前記急速充電回路
29は動作せず、AGC動作に悪影響を与えない。
また、第4トランジスタ21のコレクタ電流が第
6トランジスタ23のコレクタ電流よりも小とな
る弱電界受信状態においては、平滑コンデンサ1
0の端子電圧が十分に高くなり、第11トランジス
タ30のコレクタ電圧も十分に高くなるので、前
記第11トランジスタ30が飽和してオフになり、
やはりAGC動作に悪影響を及ぼさない。
By the way, while the collector current of the fourth transistor 21 is receiving a signal with a field strength that is larger than the collector current of the sixth transistor 23, the eleventh transistor 30 constituting the quick charging circuit 29
Since the base current does not flow, the quick charging circuit 29 does not operate and does not adversely affect the AGC operation.
In addition, in a weak electric field receiving state where the collector current of the fourth transistor 21 is smaller than the collector current of the sixth transistor 23, the smoothing capacitor 1
0 terminal voltage becomes sufficiently high and the collector voltage of the eleventh transistor 30 also becomes sufficiently high, the eleventh transistor 30 is saturated and turned off,
After all, it does not adversely affect AGC operation.

強電界受信状態においては、平滑コンデンサ1
0の放電が十分に行なわれ、AGCトランジスタ
3の導通度が十分に低下している。その状態で受
信状態が弱電界に急激に変化すると、RF増幅回
路が低利得の為、入力端子14に印加される入力
信号が零になり、入力コンデンサ31の微分作用
により平滑コンデンサ17の端子電圧が急激に低
下する。その為、第1及び第2トランジスタ18
及び19がオフになり、第3乃至第5トランジス
タ20乃至22もオフになる。第5トランジスタ
22がオフになると、電流ミラー回路28が不動
作となり、充電抵抗11による平滑コンデンサ1
0の充電が開始される。しかしながら、充電時定
数の為、前記平滑コンデンサ10の端子電圧の上
昇速度は早くない。一方、第4トランジスタ21
がオフになると、第11トランジスタ30にベース
電流が流れ、しかもその時平滑コンデンサ10の
端子電圧が低いので、前記第11トランジスタ30
がオンし、そのコレクタ電流により前記平滑コン
デンサ10が急速充電される。その為、前記平滑
コンデンサ10の端子電圧は急激に上昇し、
AGCトランジスタ3の導通度が増し、RF増幅回
路の利得が増大する。従つて、弱電界の受信信号
は、RFB増幅回路により十分に増幅されること
になり、信号レベルの低下が瞬時となるので、音
切れ状態を防止出来る。
In strong electric field reception state, smoothing capacitor 1
0 is sufficiently discharged, and the conductivity of the AGC transistor 3 is sufficiently reduced. If the receiving condition suddenly changes to a weak electric field in this state, the input signal applied to the input terminal 14 becomes zero because the RF amplifier circuit has a low gain, and the terminal voltage of the smoothing capacitor 17 decreases due to the differential action of the input capacitor 31. decreases rapidly. Therefore, the first and second transistors 18
and 19 are turned off, and the third to fifth transistors 20 to 22 are also turned off. When the fifth transistor 22 is turned off, the current mirror circuit 28 becomes inactive, and the smoothing capacitor 1
0 charging starts. However, due to the charging time constant, the rate of increase in the terminal voltage of the smoothing capacitor 10 is not fast. On the other hand, the fourth transistor 21
When turned off, the base current flows through the eleventh transistor 30, and since the terminal voltage of the smoothing capacitor 10 is low at that time, the eleventh transistor 30
is turned on, and the smoothing capacitor 10 is rapidly charged by its collector current. Therefore, the terminal voltage of the smoothing capacitor 10 rises rapidly,
The degree of conductivity of the AGC transistor 3 increases, and the gain of the RF amplifier circuit increases. Therefore, the weak electric field received signal is sufficiently amplified by the RFB amplification circuit, and the signal level decreases instantaneously, thereby preventing sound interruptions.

急速充電に応じて平滑コンデンサ10の端子電
圧が所定値迄上昇すると、第11トランジスタ30
のコレクタ電圧も高くなるので、前記第11トラン
ジスタ30が飽和し、再びオフとなり回路動作に
無関係となる。
When the terminal voltage of the smoothing capacitor 10 rises to a predetermined value in response to rapid charging, the eleventh transistor 30
Since the collector voltage of the transistor 30 also becomes high, the eleventh transistor 30 becomes saturated and turns off again, making it irrelevant to the circuit operation.

(ト) 発明の効果 以上述べた如く、本発明に依れば、電界強度が
強から弱に急激に変化した場合でもAGCが追随
出来るので、音切れ状態を防止出来る。また、平
滑コンデンサとして大容量のものを使用すること
が出来るので、低周波変調時の歪率の改善等、諸
特性の改善を計ることが出来る。更に、本発明に
依れば、急速充電回路を、電界強度の急激な変化
時のみ動作させることが出来るので、正常受信時
のAGC動作に悪影響を与えないRF AGC回路を
提供出来る。
(G) Effects of the Invention As described above, according to the present invention, even if the electric field strength changes suddenly from strong to weak, the AGC can follow it, so it is possible to prevent sound interruptions. Furthermore, since a large capacity smoothing capacitor can be used, it is possible to improve various characteristics such as the distortion rate during low frequency modulation. Further, according to the present invention, since the quick charging circuit can be operated only when the electric field strength suddenly changes, it is possible to provide an RF AGC circuit that does not adversely affect the AGC operation during normal reception.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は、本発明の一実施例を示す回路図、第
2図は従来のRF AGC回路を示す回路図、及び
第3図は第1図の具体回路例を示す回路図であ
る。 3……AGCトランジスタ、6……AGC信号発
生回路、10……平滑コンデンサ、13,29
…急速充電回路。
FIG. 1 is a circuit diagram showing an embodiment of the present invention, FIG. 2 is a circuit diagram showing a conventional RF AGC circuit, and FIG. 3 is a circuit diagram showing a specific example of the circuit shown in FIG. 3...AGC transistor, 6...AGC signal generation circuit, 10...smoothing capacitor, 13, 29 ...
…Fast charging circuit.

Claims (1)

【特許請求の範囲】[Claims] 1 RF増幅回路の利得を、混合回路から得られ
る制御信号に応じて制御するRF AGC回路にお
いて、受信信号の電界強度が強から弱に変化した
とき受信信号のレベルを示す出力信号を発生する
検出回路と、該検出回路の出力信号と基準電圧と
を比較しその差電圧に応じた充電電流を発生する
ため、ベースに基準電圧が印加される第1トラン
ジスタと、ベースに前記検出回路の出力信号が印
加される第2トランジスタとを作動接続して成る
比較回路と、前記第2トランジスタのコレクタに
接続される平滑コンデンサとからなり、前記平滑
コンデンサを、前記差電圧に応じた値の充電電流
で、前記検出回路の出力信号の値に応じた値ま
で、急速充電することを特徴とするRF AGC回
路。
1. Detection that generates an output signal indicating the level of the received signal when the electric field strength of the received signal changes from strong to weak in the RF AGC circuit that controls the gain of the RF amplifier circuit according to the control signal obtained from the mixing circuit. a first transistor to which a reference voltage is applied to the base, and a first transistor having a base to which the output signal of the detection circuit is applied, in order to compare the output signal of the detection circuit with a reference voltage and generate a charging current according to the difference voltage; and a smoothing capacitor connected to the collector of the second transistor. , an RF AGC circuit characterized in that it performs rapid charging to a value corresponding to the value of the output signal of the detection circuit.
JP3827487A 1987-02-20 1987-02-20 Rf agc circuit Granted JPS63204916A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3827487A JPS63204916A (en) 1987-02-20 1987-02-20 Rf agc circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3827487A JPS63204916A (en) 1987-02-20 1987-02-20 Rf agc circuit

Publications (2)

Publication Number Publication Date
JPS63204916A JPS63204916A (en) 1988-08-24
JPH0423443B2 true JPH0423443B2 (en) 1992-04-22

Family

ID=12520728

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3827487A Granted JPS63204916A (en) 1987-02-20 1987-02-20 Rf agc circuit

Country Status (1)

Country Link
JP (1) JPS63204916A (en)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1423349A (en) * 1972-05-12 1976-02-04 Thorn Electrical Ind Ltd Automatic gain control circuuits
JPS5310213A (en) * 1976-07-15 1978-01-30 Matsushita Electric Ind Co Ltd Receiver
JPS5756567Y2 (en) * 1977-06-21 1982-12-06

Also Published As

Publication number Publication date
JPS63204916A (en) 1988-08-24

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