JPH04240607A - Semiconductor laser device - Google Patents

Semiconductor laser device

Info

Publication number
JPH04240607A
JPH04240607A JP737091A JP737091A JPH04240607A JP H04240607 A JPH04240607 A JP H04240607A JP 737091 A JP737091 A JP 737091A JP 737091 A JP737091 A JP 737091A JP H04240607 A JPH04240607 A JP H04240607A
Authority
JP
Japan
Prior art keywords
semiconductor laser
optical fiber
base
laser device
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP737091A
Other languages
Japanese (ja)
Inventor
Joji Miyamura
宮村 穣治
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP737091A priority Critical patent/JPH04240607A/en
Publication of JPH04240607A publication Critical patent/JPH04240607A/en
Pending legal-status Critical Current

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  • Optical Couplings Of Light Guides (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To improve temp. characteristics and packaging property by simplifying a structure, allowing miniaturization and facilitating assembly. CONSTITUTION:A semiconductor laser 1 is mounted to a flat part of a base 4 via a heat sink 2 and a chip carrier 3. A spherical end optical fiber 9 protected by a ferrule 7 at the front end is fixed by YAG welding via a slide ring 6 to the tubular part 4a at the front end of the base 4. The ferrule 7 and a metallic case 11 are connected and sealed by solder 8. The need for using a condenser lens is eliminated in this way and the correspondingly compact coupling system is obtd. The base 4 and the tubular part 4a at the front end of the base are integrated in this way and since the spherical end optical fiber 9 is fixed thereto, the coupling optical system is stably supported and the fluctuations in the output occurring in the creep phenomena by temp. cycles are decreased.

Description

【発明の詳細な説明】[Detailed description of the invention]

【0001】0001

【産業上の利用分野】本発明は主として光出力用光ファ
イバを備えた半導体レーザ装置に関し、特に小型化が可
能であり、かつ温度特性が優れるとともに組立が容易で
、かつ実装性の優れた半導体レーザ装置に関する。
[Industrial Application Field] The present invention relates primarily to a semiconductor laser device equipped with an optical fiber for light output, and in particular to a semiconductor laser device that can be miniaturized, has excellent temperature characteristics, is easy to assemble, and is easy to mount. This invention relates to a laser device.

【0002】0002

【従来の技術】従来の半導体レーザ装置は、大別に2種
類あり、1つは図3に示されるように、半導体レーザ1
の光出力を効率よく光ファイバに供給する為に集光用レ
ンズ15を有し、前記集光用レンズを保持する構造を有
した金属ベース14が必要であった。また、もう1つは
図4に示されるように、半導体レーザ1の光出力を効率
よく光ファイバ9に結合するよう調整を行なった後、先
球ファイバ9をハンダ8で固定していた。
2. Description of the Related Art Conventional semiconductor laser devices are roughly divided into two types. One type is a semiconductor laser device as shown in FIG.
In order to efficiently supply the light output to the optical fiber, it is necessary to have a metal base 14 having a condensing lens 15 and a structure for holding the condensing lens. Another method is to fix the tip fiber 9 with solder 8 after making adjustments to efficiently couple the optical output of the semiconductor laser 1 to the optical fiber 9, as shown in FIG.

【0003】0003

【発明が解決しようとする課題】上述した従来の半導体
レーザ装置の内、集光用レンズを用いたスライドリング
6で調整固定するタイプは、結合系が長く、又、集光用
レンズ15そのもの及び集光用レンズを保持する金属ベ
ース14が、半導体レーザ装置内で占める割合が大きく
、小型化に制限があるという欠点がある。
[Problems to be Solved by the Invention] Among the conventional semiconductor laser devices described above, the type that is adjusted and fixed by a slide ring 6 using a condensing lens has a long coupling system, and also has problems in that the condensing lens 15 itself and The disadvantage is that the metal base 14 that holds the condensing lens occupies a large proportion of the semiconductor laser device, which limits miniaturization.

【0004】先球ファイバ9をハンダ8で固定したタイ
プは、ハンダのクリープ現象等によって結合系が変動を
起こすという欠点がある。すなわち、結合系が安定でか
つ小型であるという両方を満たした半導体レーザ装置が
無かった。
The type in which the tip fiber 9 is fixed with solder 8 has the disadvantage that the coupling system fluctuates due to the solder creep phenomenon. That is, there has been no semiconductor laser device that satisfies both the requirements of a stable coupling system and a compact size.

【0005】[0005]

【課題を解決するための手段】本発明の半導体レーザ装
置は、半導体レーザ,チップキャリア,金属ベース,光
出力用光ファイバ,および、側壁に前記光ファイバを通
過させる導入孔を有する金属ケースからなり、前記半導
体レーザが前記チップキャリアを介して前記金属ベース
の平坦部にマウントされ、前記金属ベースが前記金属ケ
ースの内部に固定され、前記光ファイバが前記導入孔よ
り挿入された半導体レーザ装置において、前記光ファイ
バが先端部を金属管に保護された先球光ファイバであり
、一方、前記金属ベースが貫通孔を有する管状部を持ち
、スライドリングを介して前記光ファイバの金属管部と
前記金属ベースの管状部をYAG溶接により固定するこ
とで、前記光ファイバと前記半導体レーザの光学結合を
得ることを特徴としている。
[Means for Solving the Problems] A semiconductor laser device of the present invention includes a semiconductor laser, a chip carrier, a metal base, an optical fiber for light output, and a metal case having an introduction hole in a side wall through which the optical fiber passes. , a semiconductor laser device in which the semiconductor laser is mounted on a flat part of the metal base via the chip carrier, the metal base is fixed inside the metal case, and the optical fiber is inserted through the introduction hole, The optical fiber is a bulbous optical fiber whose tip end is protected by a metal tube, and the metal base has a tubular portion having a through hole, and the metal tube portion of the optical fiber and the metal are connected through a slide ring. The optical fiber and the semiconductor laser are optically coupled by fixing the tubular portion of the base by YAG welding.

【0006】[0006]

【実施例】図1は本発明の半導体レーザ装置の一実施例
の構造を示す側面構造図である。同図において半導体レ
ーザ1はヒートシンク2およびチップキャリア3を介し
てベース4の平坦部にマウントされている。ベース4の
先端部(管状部)4aには、先端部をフェルール7で保
護された先球光ファイバ9がスライドリング6を介して
YAG溶接固定されている。フェルールー7と金属ケー
ス11はハンダ8により接続封止されている。この構造
の場合、集光用レンズを用いない分結合系がコンパクト
であり、従来の半導体レーザ装置より3mm程度薄型に
出来る。また、チップキャリア3がマウントされるベー
ス4と先球光ファイバが固定されるベース先端部が一体
化されており、さらに、先球光ファイバはスライドリン
グを介してベース先端部4aにYAG溶接固定されてい
るため、結合光学系が安定に支持され、クリープ現象が
顕著に観察される1℃/minの温度サイクルでほとん
どPf変動は見られなくなりΔPfが0.5dB以内で
安定している。
DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 is a side view showing the structure of an embodiment of a semiconductor laser device according to the present invention. In the figure, a semiconductor laser 1 is mounted on a flat portion of a base 4 via a heat sink 2 and a chip carrier 3. A tipped optical fiber 9 whose tip is protected by a ferrule 7 is fixed to the tip (tubular portion) 4a of the base 4 by YAG welding via a slide ring 6. The ferrule 7 and the metal case 11 are connected and sealed with solder 8. In the case of this structure, the coupling system that does not use a condensing lens is compact, and can be made about 3 mm thinner than a conventional semiconductor laser device. In addition, the base 4 on which the chip carrier 3 is mounted and the base tip to which the tip optical fiber is fixed are integrated, and the tip optical fiber is fixed by YAG welding to the base tip 4a via a slide ring. As a result, the coupling optical system is stably supported, and almost no Pf fluctuation is observed during a temperature cycle of 1° C./min, where a creep phenomenon is significantly observed, and ΔPf is stable within 0.5 dB.

【0007】図2は本発明の実施例2の側面構造図であ
る。同図は、実施例1に示した半導体レーザ装置にフェ
ルールを二分割した構造を有する先球光ファイバー9を
用いている事を特徴としている。この他は先の実施例と
同じである。
FIG. 2 is a side structural view of a second embodiment of the present invention. This figure is characterized in that the semiconductor laser device shown in Example 1 uses a tip optical fiber 9 having a structure in which a ferrule is divided into two parts. The rest is the same as the previous embodiment.

【0008】この実施例の半導体レーザ装置は光学系が
短かい分二分割したフェルール7a,7bの間の心線長
を5mm程度の長さにする事が出来る為、金属ケース1
1のひずみが、結合系にあたえる影響を最小限におさえ
る事が出来、温度差45℃でのPf変動が従来±0.5
dB以内であったのに対し、±0.3dB以内に納まっ
た。
Since the semiconductor laser device of this embodiment has a short optical system, the length of the core wire between the two divided ferrules 7a and 7b can be set to approximately 5 mm.
1 strain on the bonding system can be minimized, and the Pf fluctuation at a temperature difference of 45°C is now ±0.5
While it was within dB, it was within ±0.3 dB.

【0009】[0009]

【発明の効果】以上説明したように、本発明の半導体レ
ーザ装置では、従来見られた構造に対して、小型化が可
能であり、かつ温度特性が優れるとともに組立が容易で
、かつ実装性に優れるという効果が得られる。
[Effects of the Invention] As explained above, the semiconductor laser device of the present invention can be downsized compared to the conventional structure, has excellent temperature characteristics, is easy to assemble, and is easy to mount. The effect of being superior can be obtained.

【図面の簡単な説明】[Brief explanation of the drawing]

【図1】本発明の半導体レーザ装置の実施例1を示す側
面構造図である。
FIG. 1 is a side structural view showing a first embodiment of a semiconductor laser device of the present invention.

【図2】本発明の実施例2を示す側面構造図である。FIG. 2 is a side structural view showing a second embodiment of the present invention.

【図3】従来の半導体レーザ装置の側面構造図である。FIG. 3 is a side structural view of a conventional semiconductor laser device.

【図4】従来例の側面構造図である。FIG. 4 is a side structural view of a conventional example.

【符号の説明】[Explanation of symbols]

1    半導体レーザ 2    ヒートシンク 3    チップキャリア 4    ベース 6    スライドリング 7    フェルールー 8    ハンダ 9    先球光ファイバ 11    金属ケース 14    レンズ付ベース 1 Semiconductor laser 2 Heat sink 3 Chip carrier 4 Base 6 Slide ring 7 Ferrule 8 Solder 9 Tip optical fiber 11 Metal case 14 Base with lens

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】  半導体レーザ,チップキャリア,金属
ベース,光出力用光ファイバ,および、側壁に前記光フ
ァイバを通過させる導入孔を有する金属ケースからなり
、前記半導体レーザが前記チップキャリアを介して前記
金属ベースの平坦部にマウントされ、前記金属ベースが
前記金属ケースの内部に固定され、前記光ファイバが前
記導入孔より挿入された半導体レーザ装置において、前
記光ファイバが先端部を金属管に保護された先球光ファ
イバであり、一方、前記金属ベースが貫通孔を有する管
状部を持ち、スライドリングを介して前記光ファイバの
金属管部と前記金属ベースの管状部をYAG溶接により
固定することで、前記光ファイバと前記半導体レーザの
光学結合を得ることを特徴とする半導体レーザ装置。
1. Consisting of a semiconductor laser, a chip carrier, a metal base, an optical fiber for light output, and a metal case having an introduction hole in a side wall through which the optical fiber passes, the semiconductor laser is connected to the semiconductor laser via the chip carrier. A semiconductor laser device is mounted on a flat part of a metal base, the metal base is fixed inside the metal case, and the optical fiber is inserted through the introduction hole, wherein the optical fiber has a tip protected by a metal tube. The metal base has a tubular portion having a through hole, and the metal tube portion of the optical fiber and the tubular portion of the metal base are fixed by YAG welding via a slide ring. . A semiconductor laser device, characterized in that the optical fiber and the semiconductor laser are optically coupled.
JP737091A 1991-01-25 1991-01-25 Semiconductor laser device Pending JPH04240607A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP737091A JPH04240607A (en) 1991-01-25 1991-01-25 Semiconductor laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP737091A JPH04240607A (en) 1991-01-25 1991-01-25 Semiconductor laser device

Publications (1)

Publication Number Publication Date
JPH04240607A true JPH04240607A (en) 1992-08-27

Family

ID=11664086

Family Applications (1)

Application Number Title Priority Date Filing Date
JP737091A Pending JPH04240607A (en) 1991-01-25 1991-01-25 Semiconductor laser device

Country Status (1)

Country Link
JP (1) JPH04240607A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0948104A3 (en) * 1998-03-30 1999-10-27 Sumitomo Electric Industries, Ltd. Semiconductor laser module and method of manufacturing the same
US6219364B1 (en) 1997-01-09 2001-04-17 Nec Corporation Semiconductor laser module having improved metal substrate on peltier element

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6219364B1 (en) 1997-01-09 2001-04-17 Nec Corporation Semiconductor laser module having improved metal substrate on peltier element
EP0948104A3 (en) * 1998-03-30 1999-10-27 Sumitomo Electric Industries, Ltd. Semiconductor laser module and method of manufacturing the same
US6244754B1 (en) 1998-03-30 2001-06-12 Sumitomo Electric Industries, Ltd. Semiconductor laser module and method of manufacturing the same

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