JPH0426032A - Impregnation type cathode - Google Patents
Impregnation type cathodeInfo
- Publication number
- JPH0426032A JPH0426032A JP2129066A JP12906690A JPH0426032A JP H0426032 A JPH0426032 A JP H0426032A JP 2129066 A JP2129066 A JP 2129066A JP 12906690 A JP12906690 A JP 12906690A JP H0426032 A JPH0426032 A JP H0426032A
- Authority
- JP
- Japan
- Prior art keywords
- cathode
- thin film
- impregnated
- mixed thin
- electron
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Solid Thermionic Cathode (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
「産業−」二の利用分野]
本発明はブラウン管、撮像管、進行肢管なとの電子管に
用いられる含浸形陰極に係り、特に、低温動作型であり
かつ高電流密度・長寿命を得ることのできる含浸形陰極
に関する。Detailed Description of the Invention [Fields of Application in "Industry" 2] The present invention relates to an impregnated cathode used in electron tubes such as cathode ray tubes, image pickup tubes, and moving tubes. This article relates to an impregnated cathode that can provide high density and long life.
[従来の技術]
含浸形陰極はタングステン(W)あるいはモリブデン(
へ知)などからなる耐熱性多孔質基体の細孔部にバリウ
ム(Ba)を主成分とする電子放出物質を含浸させた構
成を基本とするものであるが、この基本+M成のままで
は動作温度か高く、実用的ではない。[Prior art] Impregnated cathodes are made of tungsten (W) or molybdenum (
The basic structure is that the pores of a heat-resistant porous substrate made of materials such as Hechi) are impregnated with an electron-emitting substance whose main component is barium (Ba), but this basic + M structure does not work. The temperature is too high to be practical.
動作温度を下げる方法としては、例えば特公昭第47−
2]343号公報記載のように、陰極表面にオスミウム
(Os)−ルテニウム(Ru)台金などを被覆する方法
か一般的に行われているが、この方法によっても動作温
度は約1000℃と高く、実用化促進に大きな障害とな
っていた。As a method of lowering the operating temperature, for example,
2] As described in Publication No. 343, the cathode surface is generally coated with an osmium (Os)-ruthenium (Ru) base metal, but even with this method, the operating temperature is approximately 1000°C. This was a major obstacle to promoting practical application.
動作温度をさらに下げる方法として、特開昭第6]−1
3526号公報記載のように、0s−Ru合金の代りに
Wおよびスカンジウム(Sc)酸化物の混合薄膜を陰極
表面に被覆する方法かある。この方法によれば高い電子
放出能(エミッション特性)か得られ、[);1者より
も動作温度を10(1”150℃下げることかできる。As a method of further lowering the operating temperature, JP-A No. 6]-1
As described in Japanese Patent No. 3526, there is a method of coating the surface of the cathode with a mixed thin film of W and scandium (Sc) oxide instead of the 0s-Ru alloy. According to this method, high electron emission performance (emission characteristics) can be obtained, and the operating temperature can be lowered by 10 (1") by 150° C. compared to the first method.
[発明が解決しようとする課題]
しかしながら、上記讐およびSc酸化物の混合薄膜を被
覆した含浸形陰極は、動作温度は低くなるが、エミッシ
ョン寿命が従来型陰極に比べて若干短く、実用化する上
で難点があった。[Problems to be Solved by the Invention] However, although the impregnated cathode coated with a mixed thin film of the above-mentioned oxide and Sc oxide has a lower operating temperature, its emission life is slightly shorter than that of a conventional cathode, and it cannot be put into practical use. There was a problem at the top.
本発明の目的は、上記従来技術の有していた課題を解決
して、低温動作型でありかつ高電流密度、長寿命を得る
ことのできる含浸形陰極を提供することにある。An object of the present invention is to provide an impregnated cathode that can operate at low temperatures, has a high current density, and has a long life by solving the problems of the prior art described above.
[課題を解決するための手段]
上記目的は、耐熱性多孔質基体と、該基体の細孔部に含
浸させたBaを主成分とする電子放出物質と、該基体表
面に設けた少なくともWとWおよびScを含む酸化物の
混合薄膜とからなる含浸形陰極において、上記WとWお
よびScを含む酸化物の混合薄膜を島状に設けた混合薄
膜とすることによって達成することができる。[Means for Solving the Problems] The above object is to provide a heat-resistant porous substrate, an electron-emitting substance mainly composed of Ba impregnated into the pores of the substrate, and at least W provided on the surface of the substrate. In an impregnated cathode comprising a mixed thin film of an oxide containing W and Sc, this can be achieved by forming a mixed thin film in which the above mixed thin film of W and an oxide containing W and Sc is provided in an island shape.
特に、上記混合薄膜は、陰極表面積の50〜90%を占
有させた場合に効果が顕著である。In particular, the mixed thin film has a remarkable effect when it occupies 50 to 90% of the cathode surface area.
[作用コ
第2図にWとWおよびScを含む酸化物とからなる混合
薄膜8を設けた従来技術の含浸形陰極の断面模式図を示
す。ここで、ヒータ6に通電して陰極を加熱することに
よって、下地含浸形陰極ペレット3内において耐熱多孔
質基体]と電子放出物質2とが反応して遊離のBaが生
成される。生成した遊離のBaは薄膜8中に拡散し、そ
の一部は玩1およびScを含む酸化物と反応して遊離の
Scを生成する。[Operation] FIG. 2 shows a schematic cross-sectional view of a conventional impregnated cathode provided with a mixed thin film 8 made of W and an oxide containing W and Sc. Here, by applying electricity to the heater 6 to heat the cathode, the heat-resistant porous substrate] and the electron-emitting substance 2 react with each other in the base-impregnated cathode pellet 3 to generate free Ba. The generated free Ba diffuses into the thin film 8, and a part of it reacts with the metal 1 and the oxide containing Sc to generate free Sc.
WおよびScを含む酸化物がSc、 W、 O,、から
なる場合にはSc、 IJ、 o、 IとBaとが反応
して、下式によってScが生成され、薄膜8内を拡散し
て陰極表面に達する。When the oxide containing W and Sc is composed of Sc, W, O,, Sc, IJ, o, I reacts with Ba, and Sc is generated according to the formula below, and diffuses within the thin film 8. reaches the cathode surface.
Sc、W、0.、+3Ba :> 3BaWO4+2
Sc −(1)また、上記反応に与らなかったB
aは薄膜8中を拡散して陰極表面に達する。このように
して陰極表面に到達したBaおよびScは電子放出物質
2の熱分解で生ずる酸素や雰囲気中の酸素と結合して、
陰極表面に単分子層〜数分子層程度の棲めて薄い厚さの
(Ba、 Sc、0)″f5A台層を形成する。この複
合層の形成によって陰極の電子放出仕事関数が1.2e
V(該複合層が存在しない場合の仕事関数は約Q、Qe
V)まで低下して電子放出能が大幅に向上し、これによ
って陰極の動作温度を大幅に下げることが可能になる。Sc, W, 0. , +3Ba :> 3BaWO4+2
Sc-(1) Also, B that did not participate in the above reaction
a diffuses through the thin film 8 and reaches the cathode surface. Ba and Sc that have reached the cathode surface in this way combine with oxygen generated by thermal decomposition of the electron-emitting substance 2 and oxygen in the atmosphere.
A (Ba, Sc, 0)''f5A platform layer with a thickness of a monomolecular layer to several molecular layers is formed on the surface of the cathode.The formation of this composite layer reduces the electron emission work function of the cathode to 1.2e.
V (the work function in the absence of the composite layer is approximately Q, Qe
V), the electron emission ability is greatly improved, which makes it possible to significantly lower the operating temperature of the cathode.
ここで、上記の電子放出能を長期にわたって維持するた
めには低仕事関数の(Ba、 Sc、0)複合層を継続
して形成し続けなければならないが、下地陰極ペレット
3からのBa供給量は動作(加熱)経過時間の平方根に
比例して減少し、また、陰極表面に拡散したBa、 S
cの陰極表面での滞在時間はii′lj者の方が短い。Here, in order to maintain the above electron emission ability over a long period of time, it is necessary to continue forming a (Ba, Sc, 0) composite layer with a low work function, but the amount of Ba supplied from the base cathode pellet 3 must be decreases in proportion to the square root of the elapsed operation (heating) time, and Ba and S diffused on the cathode surface decrease.
The residence time of c on the cathode surface is shorter for ii′lj.
従って、動作初期では、薄膜8へのBa供給量が多く、
Scを形成するとともに陰極表面に到達するに十分なり
aが生成されるが、動作時間の経過とともに陰極表面へ
のBa拡散量が少なくなり、(Ba、 Sc、 O)複
合層の組成バランスが崩れ、電子放出能か低下する。(
電子放出能の低下した陰極表面はBa濃度か極端に少な
い)。Therefore, at the initial stage of operation, the amount of Ba supplied to the thin film 8 is large;
While forming Sc, enough a is generated to reach the cathode surface, but as the operating time passes, the amount of Ba diffused to the cathode surface decreases, causing the compositional balance of the (Ba, Sc, O) composite layer to collapse. , the electron emission ability decreases. (
The surface of the cathode with reduced electron emission ability has an extremely low Ba concentration).
従って、下地隠棲ベレット3から陰極表面へのB r+
の供給を容易にできる構成とすることによって陰極の電
子放出能を長期にわたって維持できることになるが、こ
のためには、下地陰極ペレット3で生成したBaが薄膜
8内のみの拡散によることなく陰極表面に到達できる構
成とすれば良く、第1図に示すように、WとWおよびS
cを含む酸化物とからなる混合薄膜を島状に設けた混合
薄膜7とし、Baの供給を薄膜8を通しての拡散のみに
よる供給でなく、表面拡散による供給も加えることによ
って、下地陰極ペレット3からのBa総供給量か減少し
ても必要かつ十分なりaを陰極表面に供給することがで
き、これによって、(Ba、Sc、O)複合層を長時間
にわたって形成、維持することかできることになる。Therefore, B r+ from the base covert pellet 3 to the cathode surface
The electron emitting ability of the cathode can be maintained over a long period of time by having a configuration that allows easy supply of Ba. It is sufficient to have a configuration that can reach W, W and S, as shown in Figure 1.
The mixed thin film 7 is formed of an island-shaped mixed thin film consisting of an oxide containing c, and Ba is supplied not only by diffusion through the thin film 8, but also by surface diffusion. Even if the total Ba supply amount decreases, the necessary and sufficient amount of a can be supplied to the cathode surface, thereby making it possible to form and maintain a (Ba, Sc, O) composite layer for a long time. .
なお、上記島状に設ける混合薄膜7の陰極表面積に占め
る比率が50〜90%の範囲の場合効果を示すことが実
験的に知られた。It has been experimentally found that an effect is exhibited when the ratio of the island-shaped mixed thin film 7 to the surface area of the cathode is in the range of 50 to 90%.
[実施例]
以下、本発明構成の含浸形陰極について実施例によって
具体的に説明する。[Example] Hereinafter, the impregnated cathode having the structure of the present invention will be specifically explained using Examples.
第1図本発明含浸形陰極の概略構成を示す断面模式図に
よってその作製について説明する。すなわち、まず、平
均粒径5−のW粉末をプレス成形し、水素雰囲気中で仮
焼結、真空中で本焼結を行い、細孔率が28%の耐熱多
孔質基体1を作製し、さらに該基体]に4BaO−Ca
O−AI、 O,の組成からなる電子放出物質2を非酸
化性雰囲気(水素中または真空中)で加熱溶融、含浸さ
せて、下地含浸形陰極ペレット3を作製した。次いで、
該ペレット3をMOからなるカップ状の障壁層4に挿入
し、さらにヒータ6を内包するMO製ススリーブ5挿入
した後固着して陰極本体を作製した。The fabrication of the impregnated cathode of the present invention will be explained with reference to FIG. 1, which is a schematic cross-sectional view showing the general structure of the impregnated cathode of the present invention. That is, first, W powder with an average particle size of 5- is press-molded, pre-sintered in a hydrogen atmosphere, and main sintered in a vacuum to produce a heat-resistant porous substrate 1 with a porosity of 28%. Furthermore, 4BaO-Ca
A substrate-impregnated cathode pellet 3 was prepared by melting and impregnating an electron-emitting material 2 having a composition of O-AI, O, in a non-oxidizing atmosphere (in hydrogen or vacuum). Then,
The pellet 3 was inserted into a cup-shaped barrier layer 4 made of MO, and a sleeve 5 made of MO containing a heater 6 was further inserted and fixed to form a cathode body.
次に、複数物質の同時スパッタリングが可能な装置を使
用して、W、 SC,W、Ollの2種をスパッタター
ゲットとじ、開孔部が数十−角で開孔率それぞれ30.
50.70.90%のメツシュ状マスクを用い、ペレッ
ト3表面に面積占有率それぞれ30.50.70.90
%の島状混合薄膜を作製した。なお、マスクを用いない
場合(面積占有率100%に相当する)の試料も同時に
作製した。ここで、スパッタリングは、まず装置内を約
3XIO−’Paまで排気し、アルゴンガスをフロー(
30secm、この時の雰囲気4 X 10−’ Pa
)した後、装置排気系の主バルブにより1OPaの圧ツ
ノに調節した状態で、上記陰極本体を水冷しながら、W
はDC(直流)スパッタ、Sc、 W、 0. 、はR
F(高周波)スパッタにより、混合薄膜7の厚さが50
〜looonmの範囲でしかも該薄膜中のSc、W、0
.、が18〜33重量%となるようにスパッタパワーお
よび時間を調節して行った。なお、Sc、 W、 0.
、が18〜33重量%の混合薄膜7について溶液発光
分光分析(ICPS)によりScとWとの重量比を求め
たところSc/Wは0.02〜0.04の範囲であった
。Next, using a device capable of simultaneous sputtering of multiple materials, two types of W, SC, W, and Oll were sputtered as sputter targets, and the openings were several tens of square meters and the pore size was 30.
Using a mesh-like mask of 50.70.90%, the area occupancy rate is 30.50.70.90 respectively on the pellet 3 surface.
% island-like mixed thin film was prepared. Note that a sample without using a mask (corresponding to an area occupation rate of 100%) was also produced at the same time. Here, sputtering is performed by first evacuating the inside of the apparatus to approximately 3XIO-'Pa, and then flowing argon gas (
30sec, atmosphere at this time 4 X 10-' Pa
) After that, with the pressure adjusted to 1 OPa by the main valve of the device exhaust system, the cathode body was cooled with water and heated with W.
is DC (direct current) sputtering, Sc, W, 0. , is R
The thickness of the mixed thin film 7 is 50 mm by F (high frequency) sputtering.
~looonm and Sc, W, 0 in the thin film
.. The sputtering power and time were adjusted so that the amount of sputtering was 18 to 33% by weight. In addition, Sc, W, 0.
When the weight ratio of Sc and W was determined by solution emission spectroscopy (ICPS) for the mixed thin film 7 containing 18 to 33% by weight of Sc/W, Sc/W was in the range of 0.02 to 0.04.
以下、混合薄膜の厚さを200nm、組成をW−25%
Sc、 W、 Ol、とした場合の陰極について得られ
た特性について説明する。Below, the thickness of the mixed thin film is 200 nm, and the composition is W-25%.
The characteristics obtained for the cathode in the case of Sc, W, and Ol will be explained.
第3図は、上記のようにして作成した陰極試料について
10−“Paオーダーの高真空容器内に設けた陽極と陰
極とからなる2極管配置において、1150℃4時間の
活性化後に陽極に正のパルス電圧を印加して求めた9
00 ’Cにおける飽和電流密度と、島状混合薄膜占有
面積比率との関係を示した図である。この結果から、占
有面積比率70%以上では電子放出能は低下せず、また
、50%でも1割程度低下するに止まるが、30%では
半分程度まで低下することがわかる。従って、混合薄膜
の占有面積比率か50%以上であれば900℃動作が可
能であり、低温動作型陰極ということができる。Figure 3 shows that the cathode sample prepared as described above was exposed to the anode after activation at 1150°C for 4 hours in a diode arrangement consisting of an anode and a cathode placed in a high vacuum chamber of the order of 10-"Pa. 9 obtained by applying a positive pulse voltage
FIG. 3 is a diagram showing the relationship between the saturation current density at 00'C and the area ratio occupied by the island-shaped mixed thin film. This result shows that the electron emission ability does not decrease when the occupied area ratio is 70% or more, and only decreases by about 10% even when the area ratio is 50%, but decreases to about half when the area ratio is 30%. Therefore, if the occupied area ratio of the mixed thin film is 50% or more, operation at 900°C is possible, and it can be called a low-temperature operation type cathode.
また、第4図は電子放出(エミッション電流)の動作時
の経時変化を示した図で、縦軸は初期におけるエミッシ
ョン電流を100とした場合のエミッション電流値、横
軸は1000時間単時間表した動作経過時間であり、混
合薄膜の占有面積比率をパラメータとして示したもので
ある。この結果から、混合薄膜を島状に設けることによ
ってエミッション電流を長時間にわたって維持すること
ができ、格段に長寿命化が図られることがわかる。In addition, Figure 4 is a diagram showing the change in electron emission (emission current) over time during operation, where the vertical axis represents the emission current value when the initial emission current is set as 100, and the horizontal axis represents the single time period of 1000 hours. This is the elapsed operation time, and the occupied area ratio of the mixed thin film is shown as a parameter. This result shows that by providing the mixed thin film in the form of islands, the emission current can be maintained over a long period of time, resulting in a significantly longer life.
また、第5図は、混合薄膜占有面積比率70%の陰極と
100%の陰極(従来型陰極)とについて、動作初期の
陰極表面と10000時間動作後の陰極表面のオージェ
分析を行った結果を示した図である。Furthermore, Figure 5 shows the results of Auger analysis of the cathode surface at the initial stage of operation and after 10,000 hours of operation for a cathode with a mixed thin film occupation area ratio of 70% and a cathode with 100% (conventional cathode). FIG.
この結果から、動作初期の低仕事関数(Ba、Sc、0
)複合層表面(a)と比較して、10000時間動作後
の従来構成1(3極の表面(c)は明らかにBaが不足
しており(l(a、Sc、0)複合層の組成バランスが
崩れているか、本発明の混合薄膜占有面積比率70%の
1!2極表面は10000時間動作後(b)でも初期の
状態(a)と殆と同じ状態に保たれていることがわかる
。また、このことから、従来構成陰極の動作時間経過に
伴うエミッション電流の低下は下地陰極ペレットから陰
極表面へのBa供給不足によるものであることかわかる
。From this result, a low work function (Ba, Sc, 0
) Compared with the composite layer surface (a), the conventional structure 1 (triode surface (c) after 10,000 hours of operation clearly lacks Ba (l(a, Sc, 0)) and the composition of the composite layer It can be seen that the 1!2 pole surface of the mixed thin film of the present invention with an occupied area ratio of 70% remains in almost the same state as the initial state (a) even after 10,000 hours of operation (b), indicating that the balance has been disrupted. Moreover, from this, it can be seen that the decrease in the emission current as the operating time of the conventionally configured cathode elapses is due to insufficient supply of Ba from the underlying cathode pellet to the cathode surface.
[発明の効果]
以上述べてきたように、含浸形陰極を本発明構成の含浸
形陰極とすることすなわち陰極表面にWおよびWとSc
とを含む酸化物からなる混合薄膜を島状に設けた含浸形
陰極とすることによって、従来技術の有していた課題を
解決して、陰極表面に低仕事関数の(Ba、 5C10
)複合層を長時間にわたって形成、維持することができ
、従来陰極に比べてエミッション電流を格段に長く維持
することのできる長寿命の含浸形陰極を提供することが
てきた。また、低仕事関数の(Ba、 Sc、0)複合
層を容易に形成できることにより、従来の含浸形陰極よ
りも動作温度を100〜150℃下げることができ、従
って陰樹表面からのBaおよびBaOの蒸発速度を1〜
1.5桁小さくすることかできるため、グリッドエミッ
ションなどによる管球特性劣化の発生を格段に改善する
ことのできる含浸形陰榛を得ることかできた。さらに、
動作温度を下げることにより、陰極加熱用ヒータの信頼
性も向上するとともに、低消費電力化が可能になった。[Effects of the Invention] As described above, by making the impregnated cathode into an impregnated cathode having the structure of the present invention, W and W and Sc are added to the surface of the cathode.
By creating an impregnated cathode in which a mixed thin film made of an oxide containing
) It has been possible to provide a long-life impregnated cathode that can form and maintain a composite layer for a long time, and can maintain an emission current for a much longer time than conventional cathodes. Furthermore, by easily forming a (Ba, Sc, 0) composite layer with a low work function, the operating temperature can be lowered by 100 to 150°C compared to a conventional impregnated cathode, and therefore Ba and BaO from the surface of the shade tree can be reduced. The evaporation rate of 1~
Since the size can be reduced by 1.5 orders of magnitude, it has been possible to obtain an impregnated shade that can significantly reduce the occurrence of deterioration of tube characteristics due to grid emission and the like. moreover,
By lowering the operating temperature, the reliability of the cathode heater has been improved and power consumption has also been reduced.
第1図は本発明含浸形陰極の概略構成を示す断面模式図
、第2図は従来技術の含浸形陰極の概略構成を示す断面
模式図、第3図は混合薄膜占有面積比率と900℃にお
ける飽和電流密度との関係を示す図、第4図は本発明構
成の含浸形陰極と従来構成の含浸形陰極との動作時のエ
ミッション電流の経時変化の比較を示した図、第5図は
本発明構成の含浸形陰極と従来構成の含浸形陰極とにつ
いて、動作初期と動作10000時間経過後の陰極表面
のオーシェスベク)・ルの比較を示した図である。
l・・耐熱性多孔質基体、2・・・電子放出物τ′1、
:3・・・下地含浸形陰極ぺしット、4・障壁層、5・
・・スリーブ、 6・・・ヒータ、7・島状混
合薄膜、 8・・;・昆合薄膜9代理人 芹埋士
小川)扮;ノj、−−(<
第
図
第2図
第3図
第
図
賽クジに社afuご丁ア1丁う2【ζ5治リセ呼M(’
10)11ヒ174’F(4θクタ!シン好−ト1讐1
(kh)第
図
千−ジエ噌鴎:づ:工オルN−(e)Fig. 1 is a schematic cross-sectional view showing the general structure of the impregnated cathode of the present invention, Fig. 2 is a schematic cross-sectional view showing the general structure of the impregnated cathode of the prior art, and Fig. 3 is the mixed thin film occupied area ratio and temperature at 900°C. Figure 4 is a diagram showing the relationship with the saturation current density, Figure 4 is a diagram showing a comparison of the change in emission current over time during operation between an impregnated cathode with the structure of the present invention and an impregnated cathode with a conventional configuration, and Figure 5 is a diagram showing the change in emission current over time during operation. FIG. 3 is a diagram showing a comparison of the cathode surface values in the initial stage of operation and after 10,000 hours of operation for an impregnated cathode having an inventive structure and an impregnating cathode having a conventional structure. l...Heat-resistant porous substrate, 2...Electron emitter τ'1,
:3... base impregnated cathode pessitite, 4. barrier layer, 5.
...Sleeve, 6.Heater, 7.Island-like mixed thin film, 8..;Kongo thin film 9 agent Seribuji
Ogawa) play; noj, --(<
10) 11hi 174'F (4θ Kuta! Synopsis 1 enemy 1
(kh) Diagram 1000-Jie Sou Ou: Zu: Kool N-(e)
Claims (1)
Baを主成分とする電子放出物質と、該基体表面に設け
た少なくともWとWおよびScを含む酸化物の混合薄膜
とからなる含浸形陰極において、上記WとWおよびSc
を含む酸化物の混合薄膜が島状に設けられた混合薄膜で
あることを特徴とする含浸形陰極。 2、上記WとWおよびScを含む酸化物の混合薄膜が陰
極表面積の50〜90%を占有していることを特徴とす
る特許請求の範囲第1項記載の含浸形陰極。[Claims] 1. A heat-resistant porous substrate, an electron-emitting substance mainly composed of Ba impregnated into the pores of the substrate, and at least W, W and Sc provided on the surface of the substrate. In an impregnated cathode consisting of a mixed thin film of oxides, the above W and W and Sc
An impregnated cathode characterized in that the mixed thin film of oxides containing the above is provided in an island shape. 2. The impregnated cathode according to claim 1, wherein the mixed thin film of W and oxide containing W and Sc occupies 50 to 90% of the surface area of the cathode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2129066A JPH0426032A (en) | 1990-05-21 | 1990-05-21 | Impregnation type cathode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2129066A JPH0426032A (en) | 1990-05-21 | 1990-05-21 | Impregnation type cathode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0426032A true JPH0426032A (en) | 1992-01-29 |
Family
ID=15000242
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2129066A Pending JPH0426032A (en) | 1990-05-21 | 1990-05-21 | Impregnation type cathode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0426032A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1050438C (en) * | 1993-10-05 | 2000-03-15 | 株式会社金星社 | Impregnation type cathode for a cathodic ray tube |
-
1990
- 1990-05-21 JP JP2129066A patent/JPH0426032A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1050438C (en) * | 1993-10-05 | 2000-03-15 | 株式会社金星社 | Impregnation type cathode for a cathodic ray tube |
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