JPH0426538U - - Google Patents
Info
- Publication number
- JPH0426538U JPH0426538U JP6826990U JP6826990U JPH0426538U JP H0426538 U JPH0426538 U JP H0426538U JP 6826990 U JP6826990 U JP 6826990U JP 6826990 U JP6826990 U JP 6826990U JP H0426538 U JPH0426538 U JP H0426538U
- Authority
- JP
- Japan
- Prior art keywords
- temperature
- integrated circuit
- semiconductor substrate
- heating element
- monolithic integrated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010438 heat treatment Methods 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims 4
- 239000000758 substrate Substances 0.000 claims 4
- 238000010586 diagram Methods 0.000 description 3
- 238000009529 body temperature measurement Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
Landscapes
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Description
第１図は、第１の考案の一実施例を示す斜視図
、第２図は、第１図の等価的な回路図、第３図は
、第１図の温度測定用ダイオード素子の温度特性
を示す図、第４図は、第２の考案の一実施例を示
す等価的な回路図、第５図は、従来の技術の一例
を示す図である。
１……モノリシツク集積回路ペレツト、２……
ＦＥＴ発熱体素子、３……抵抗発熱体素子、４ａ
，４ｂ……温度測定用ダイオード素子、６ａ，７
ａ，６ｂ，７ｂ……引き出し電極。
Fig. 1 is a perspective view showing an embodiment of the first invention, Fig. 2 is an equivalent circuit diagram of Fig. 1, and Fig. 3 is the temperature characteristic of the temperature measuring diode element of Fig. 1. FIG. 4 is an equivalent circuit diagram showing an embodiment of the second invention, and FIG. 5 is a diagram showing an example of a conventional technique. 1... Monolithic integrated circuit pellet, 2...
FET heating element, 3...Resistance heating element, 4a
, 4b... diode element for temperature measurement, 6a, 7
a, 6b, 7b... Extraction electrodes.
Claims (1)
するモノリシツク集積回路において、温度に対す
る動作特性から前記発熱体素子の温度を測定する
温度測定用ダイオード素子が、前記半導体基板上
の温度測定可能な位置に設けられたことを特徴と
するモノリシツク集積回路。 (2) 半導体基板上に構成された発熱体素子を有
するモノリシツク集積回路において、抵抗値の温
度特性から前記発熱体素子の温度を測定する抵抗
素子が、前記半導体基板上の温度測定可能な位置
に設けられたことを特徴とするモノリシツク集積
回路。[Claims for Utility Model Registration] (1) In a monolithic integrated circuit having a heating element constructed on a semiconductor substrate, a temperature measuring diode element for measuring the temperature of the heating element based on its operating characteristics with respect to temperature, A monolithic integrated circuit characterized by being provided at a position on a semiconductor substrate where temperature can be measured. (2) In a monolithic integrated circuit having a heating element configured on a semiconductor substrate, a resistance element that measures the temperature of the heating element from the temperature characteristics of the resistance value is located at a position on the semiconductor substrate where the temperature can be measured. A monolithic integrated circuit characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6826990U JPH0426538U (en) | 1990-06-27 | 1990-06-27 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6826990U JPH0426538U (en) | 1990-06-27 | 1990-06-27 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0426538U true JPH0426538U (en) | 1992-03-03 |
Family
ID=31602558
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6826990U Pending JPH0426538U (en) | 1990-06-27 | 1990-06-27 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0426538U (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63164260A (en) * | 1986-12-25 | 1988-07-07 | Mitsubishi Electric Corp | Semiconductor device |
| JPS63299264A (en) * | 1987-05-29 | 1988-12-06 | Fuji Electric Co Ltd | Semiconductor device |
| JPH01241157A (en) * | 1988-03-23 | 1989-09-26 | Fujitsu Ltd | Semiconductor integrated circuit |
-
1990
- 1990-06-27 JP JP6826990U patent/JPH0426538U/ja active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63164260A (en) * | 1986-12-25 | 1988-07-07 | Mitsubishi Electric Corp | Semiconductor device |
| JPS63299264A (en) * | 1987-05-29 | 1988-12-06 | Fuji Electric Co Ltd | Semiconductor device |
| JPH01241157A (en) * | 1988-03-23 | 1989-09-26 | Fujitsu Ltd | Semiconductor integrated circuit |