JPH0426542A - Al2o3-based ceramics - Google Patents
Al2o3-based ceramicsInfo
- Publication number
- JPH0426542A JPH0426542A JP2128254A JP12825490A JPH0426542A JP H0426542 A JPH0426542 A JP H0426542A JP 2128254 A JP2128254 A JP 2128254A JP 12825490 A JP12825490 A JP 12825490A JP H0426542 A JPH0426542 A JP H0426542A
- Authority
- JP
- Japan
- Prior art keywords
- ceramics
- whiskers
- carbides
- nitrides
- toughness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000919 ceramic Substances 0.000 title claims abstract description 57
- 150000001247 metal acetylides Chemical class 0.000 claims abstract description 17
- 150000004767 nitrides Chemical class 0.000 claims abstract description 8
- 239000002114 nanocomposite Substances 0.000 claims abstract description 5
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 4
- 229910052735 hafnium Inorganic materials 0.000 claims abstract description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 4
- 229910052758 niobium Inorganic materials 0.000 claims abstract description 4
- 229910052720 vanadium Inorganic materials 0.000 claims abstract description 4
- 229910052726 zirconium Inorganic materials 0.000 claims abstract description 4
- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 3
- 229910052721 tungsten Inorganic materials 0.000 claims abstract 2
- 239000013078 crystal Substances 0.000 claims description 16
- 239000002002 slurry Substances 0.000 abstract description 8
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052593 corundum Inorganic materials 0.000 abstract description 4
- 230000003014 reinforcing effect Effects 0.000 abstract description 4
- 239000002904 solvent Substances 0.000 abstract description 4
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract description 4
- 239000000835 fiber Substances 0.000 abstract description 2
- 230000002195 synergetic effect Effects 0.000 abstract description 2
- 229910052799 carbon Inorganic materials 0.000 abstract 3
- -1 carbon nitrides Chemical class 0.000 abstract 3
- 239000002245 particle Substances 0.000 abstract 1
- 230000001105 regulatory effect Effects 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 238000005245 sintering Methods 0.000 description 13
- BYFGZMCJNACEKR-UHFFFAOYSA-N aluminium(i) oxide Chemical compound [Al]O[Al] BYFGZMCJNACEKR-UHFFFAOYSA-N 0.000 description 10
- 230000000694 effects Effects 0.000 description 10
- 239000000203 mixture Substances 0.000 description 8
- 230000007423 decrease Effects 0.000 description 6
- 238000002156 mixing Methods 0.000 description 5
- 239000000843 powder Substances 0.000 description 5
- 238000007670 refining Methods 0.000 description 5
- 230000002159 abnormal effect Effects 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- WHOPEPSOPUIRQQ-UHFFFAOYSA-N oxoaluminum Chemical compound O1[Al]O[Al]1 WHOPEPSOPUIRQQ-UHFFFAOYSA-N 0.000 description 3
- 230000035939 shock Effects 0.000 description 3
- 229910018540 Si C Inorganic materials 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000007580 dry-mixing Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000011812 mixed powder Substances 0.000 description 1
- 238000009828 non-uniform distribution Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
Landscapes
- Compositions Of Oxide Ceramics (AREA)
Abstract
Description
（産業上の利用分野）
本発明は、Ａｌ２ｏｓ基セラミツクスに関し、詳細には
、靭性と耐摩耗性を必要とする切削工具やダイス抽伸プ
ラグ等の治工具類、電気伝導性と耐熱衝撃性を必要とす
るセラミックスヒータ等の電子部品類、および、耐食性
、耐酸化性、耐摩耗性および破＃ＩＮ性を必要とするメ
カニカルシールやポンプ等の機械部品類に用いて好適な
Ａｌ＊Ｏｓ基セラミックスに関するものである。
（従来の技術）
Ａｌ２Ｏ２基セラミツクスは、耐食性、耐酸化性、耐摩
耗性に優れ、又、従来エンジニアリングセラミックスと
して多用されてきたＳ！ｚＮｔ系セラミックスに比し、
低温焼結が可能であると共に、高純度で安価なＡｌ２Ｏ
，粉末か容易に入手できるため経済性に優れている。か
かる点から、近年、Ａｉ、ｏｔ基セラミックスの有用性
か艶面されてきた。
しかし、 Ａ１□０□基セラミックスは、８１□Ｎ４系
セラミツクスに比して強度、高温強度、破壊靭性及び耐
熱衝撃性か劣っているという欠点がある。
そこで、ＡＩＪａ基セラミックス中に高強度の針状結晶
を均一分散して靭性向上を図るべく研究が数多くなされ
、その結果ＳｉＣウィスカをマトリックスのＡｌｘ０ｉ
中に分散したＡＩ ｔｏｗ基セラミックス（以降、Ｓｉ
Ｃウィスカ分散Ａｌ２Ｏ，基セラミックスという）が開
発されている。例えば、米国特許第４５４３３４５号公
報には０．３μｌのＡＩＪ＊粉末とＳｉＣウィスカとを
乾式混合した後、１８５０°Ｃ，４１ＭＰａ、 ４５分
間の条件で一軸加圧焼結してなるＳｉＣウィスカ分散Ａ
１．０１基セラミツクスか提示され、破壊靭性値か８〜
９ Ｋｇ／ｍが″向上し、又、破壊強度が８００ＭＰａ
（８１，６Ｋｇ／ｓｍりのものまで得られている。
（発明か解決しようとする課題）
ところが、上記米国特許公報に示される如き従来のＳｉ
Ｃウィスカ分散Ａ１□０．基セラミックスは、部分的に
粗大結晶をしばしば育しているので、強度及び靭性の再
現性に乏しく、高強度・高靭性を安定して育し得ず、又
、上記粗大結晶がある場合には従来のＡｌ２Ｏ２基セラ
ミツクスに比して強度及び靭性が低くなるという問題点
がある。更に、粗大結晶かない場合でも５ＩｓＮａ等の
セラミックスに比較すると強度及び靭性か劣っている。
上記粗大結晶は、焼結温度か高く、且つ、ＳｉＣウィス
カの分散か不均一である事に起因する。即ち、ＳｉＣを
含む場合は焼結温度を高くする必要かあり、かかる高温
になってもＳｉＣウィスカは結晶粒成長抑制作用が育る
ので、それか均一分散されている場合は焼結時の結晶粒
異常成長か生じ難いか、不均一分散されている場合はＳ
ｉＣウィスカの少ない部分で焼結時に異常粒成長を起こ
す。
上記の対策として、ＳｉＣウィスカを溶媒に添加してス
ラリ化し、該スラリとＡ１．０□粉末とを混合して均一
分散する事が考えられる。しかし、スラリ中ではウィス
カを均一分散する事は極めて難しいので、上記混合を充
分長時間する事か必要であり、そうすると混合中に針状
のウィスカが欠損してそのアスペクト比か著しく低下す
る。そのためＳｉＣウィスカか強度及び靭性向上に寄与
しなくなり、焼結体の強度及び靭性の低下を招くという
問題点かある。
本発明はこの様な事情に着目してなされたものであって
、その目的は従来のものかもつ以上のような問題点を解
消し、従来のＡｌ２Ｏ□基セラＥ ノクスに比し、高強
度及び高靭性を常に安定して育し、更に５ｉｓＮａ等の
セラミックスに比し、同等もしくはそれ以上の強度及び
靭性を育し得るへ１□帆基セラミックスを提供しようと
するものである。
（課題を解決するための手段）
上記の目的を達成するために、本発明は次のような構成
のＡ１□０．基セラミックスとしている。
即ち、請求項１に記載のＡ１□０．基セラミックスは、
ＳｉＣウィスカを３〜４０ｗｔ％含むと共に、Ｓｉ。
Ｖ、 Ｃｒ、 Ｚｒ、 Ｎｂ、 Ｍｏ、 Ｈｆ、 Ｔａ
、 Ｗの炭化物、窒化物、炭窒化物の１種または２種以
上を０．５〜４０ｗｔ％含むα型Ａｌ２Ｏ５焼結体より
なることを特徴とするＡ１．Ｏｓ基セラミックスである
。
請求項２に記載のＡｌ２Ｏ，基セラミックスは、前記Ｓ
ｉＣウィスカの０量が０．３〜ｔ、ｓｗｔ％である請求
項１に記載のＡｌｔＯ□基セラミックスである。
請求項３に記載のＡｌ□０３基セラミックスは、前記炭
化物、窒化物、炭窒化物の１種または２種以上の一部が
ＡＩＪｓ結晶粒内にナノオーダで分散してナノコンポジ
ット構造を呈する請求項１又は請求項２に記載のＡｌ２
Ｏ３基セラミツクスである。
（作 用）
本発明に係るＡ１□０３基セラミックスは、前記の如く
、ＳｉＣウィスカを３〜４０ｗｔ％含むと共に、Ｓｌ、
Ｖ、 Ｃｒ、 Ｚｒ、 Ｎｂ、 Ｍｏ、 Ｈｆ、 Ｔ
ａ、 Ｗの炭化物、窒化物、炭窒化物の１種または２種
以上（以降、炭化物等という）を０．５〜４０ｗｔ％含
むようにしている。
上記炭化物等は、Ａ１．０．基セラミックスの組織を微
細化すると共に焼結時の異常な粒成長を抑制し、結晶粒
を微細化する作用を存している。
そのため、焼結の際にＳｉＣウィスカか不均一に分散し
ている場合でも、結晶粒の異常な成長か生し難く、粗大
結晶の無い焼結体（ＡｌｔＯｉ基セラミックス）になり
易い。従って、常に安定してＳｉＣウィスカの高強度・
高靭性化の作用効果か発揮される。又、同時に前記炭化
物等の結晶粒微細化作用により、セラミックスの強度及
び靭性をさらに向上し得る。
故に、本発明に係るＡｌｚ（ｈ基セラミックスは、従来
のＡｌｘ０ｔ基セラミツクスに比し、高強度及び高靭性
を常に安定して有し、更にｓｉ！ＦＪ４等のセラミック
スに比し、同等もしくはそれ以上の強度及び靭性を育し
得る。
前記ＳｉＣウィスカの含有量を３〜４０ｗｔ％としてい
るのは、３冑ｔ％未満ではＳｉＣウィスカの高強度・高
靭性化の作用効果か殆ど認められず、４０ｗｔ％超では
相対的にＡ１．島の量が減少してＡｌｔｏｓの育する優
れた特性（耐食性等）が劣下するようになるからである
。
前記炭化物等の含有量を０．５〜４０ｗ(Field of Industrial Application) The present invention relates to Al2os-based ceramics, and in particular, jigs and tools such as cutting tools and die drawing plugs that require toughness and wear resistance, and electrical conductivity and thermal shock resistance. The present invention relates to Al*Os-based ceramics suitable for use in electronic parts such as ceramic heaters, and mechanical parts such as mechanical seals and pumps that require corrosion resistance, oxidation resistance, wear resistance, and breakage resistance. It is something. (Prior Art) Al2O2-based ceramics have excellent corrosion resistance, oxidation resistance, and wear resistance, and have been widely used as engineering ceramics. Compared to zNt ceramics,
Al2O can be sintered at low temperatures and is highly pure and inexpensive.
It is highly economical as it is easily available in powder form. From this point of view, in recent years, the usefulness of Ai and OT-based ceramics has been questioned. However, A1□0□-based ceramics have the drawback of being inferior to 81□N4-based ceramics in terms of strength, high-temperature strength, fracture toughness, and thermal shock resistance. Therefore, many studies have been conducted to uniformly disperse high-strength acicular crystals in AIJa-based ceramics to improve toughness.
AI tow-based ceramics (hereinafter referred to as Si
C whisker-dispersed Al2O, referred to as base ceramics) have been developed. For example, U.S. Patent No. 4,543,345 discloses a SiC whisker dispersion A obtained by dry mixing 0.3 μl of AIJ* powder and SiC whiskers, and then uniaxial pressure sintering at 1850°C, 41 MPa, and 45 minutes.
1.01 ceramics is presented, and the fracture toughness value is 8 ~
9 Kg/m has been improved and the breaking strength has been increased to 800 MPa.
(Up to 81.6 kg/sm has been obtained. (Problem to be solved by the invention) However, the conventional Si
C whisker dispersion A1□0. Base ceramics often grow partially coarse crystals, so they have poor reproducibility of strength and toughness, and cannot stably grow high strength and high toughness. There is a problem that the strength and toughness are lower than that of conventional Al2O2-based ceramics. Furthermore, even when there are no coarse crystals, the strength and toughness are inferior to ceramics such as 5IsNa. The coarse crystals are caused by the high sintering temperature and non-uniform distribution of SiC whiskers. In other words, if it contains SiC, it is necessary to raise the sintering temperature, and even at such high temperatures, SiC whiskers have a suppressive effect on crystal grain growth. If abnormal grain growth occurs or is difficult to occur, or if it is unevenly distributed, S
Abnormal grain growth occurs during sintering in areas with few iC whiskers. As a countermeasure to the above problem, it is possible to add SiC whiskers to a solvent to form a slurry, and then mix the slurry with the A1.0□ powder to uniformly disperse it. However, since it is extremely difficult to uniformly disperse the whiskers in the slurry, it is necessary to carry out the above-mentioned mixing for a sufficiently long time, otherwise the acicular whiskers will be lost during the mixing and the aspect ratio will drop significantly. Therefore, there is a problem that the SiC whiskers no longer contribute to improving the strength and toughness, leading to a decrease in the strength and toughness of the sintered body. The present invention has been made in view of these circumstances, and its purpose is to solve the above-mentioned problems with the conventional ones, and to provide high strength compared to the conventional Al2O□-based CeraE NOX. The purpose of the present invention is to provide a 1□ base ceramic that can constantly and stably develop high strength and toughness, and that can also develop strength and toughness that are equal to or higher than those of ceramics such as 5isNa. (Means for Solving the Problems) In order to achieve the above object, the present invention provides an A1□0. It is based on ceramics. That is, A1□0. according to claim 1. The base ceramics are
Contains 3 to 40 wt% of SiC whiskers and Si. V, Cr, Zr, Nb, Mo, Hf, Ta
, A1. is made of an α-type Al2O5 sintered body containing 0.5 to 40 wt% of one or more of W carbides, nitrides, and carbonitrides. It is an Os-based ceramic. The Al2O, based ceramic according to claim 2 is characterized in that the S
The AltO□-based ceramic according to claim 1, wherein the amount of iC whiskers is 0.3 to t, swt%. The Al□03-based ceramic according to claim 3 has a nanocomposite structure in which one or more of the carbides, nitrides, and carbonitrides are partially dispersed in nano-order within the AIJs crystal grains. 1 or Al2 according to claim 2
It is an O3 group ceramic. (Function) As described above, the A1□03-based ceramic according to the present invention contains 3 to 40 wt% of SiC whiskers, and also contains 3 to 40 wt% of SiC whiskers.
V, Cr, Zr, Nb, Mo, Hf, T
a. One or more of W carbides, nitrides, and carbonitrides (hereinafter referred to as carbides) are contained in an amount of 0.5 to 40 wt%. The above carbide etc. have A1.0. It has the effect of refining the structure of the base ceramic, suppressing abnormal grain growth during sintering, and refining crystal grains. Therefore, even if SiC whiskers are unevenly dispersed during sintering, abnormal growth of crystal grains is difficult to occur, and a sintered body (AltOi-based ceramics) without coarse crystals is likely to be obtained. Therefore, the high strength and strength of SiC whiskers are always stable.
The effect of increasing toughness is demonstrated. Moreover, at the same time, the strength and toughness of the ceramic can be further improved by the crystal grain refining effect of the carbides and the like. Therefore, the Alz(h-based ceramics of the present invention always stably have high strength and high toughness compared to conventional Alx0t-based ceramics, and also have the same or higher toughness than ceramics such as si!FJ4). The reason why the SiC whisker content is set to 3 to 40 wt% is that if it is less than 3 wt%, the effect of increasing the strength and toughness of the SiC whiskers is hardly recognized; This is because if the content exceeds 0.5 to 40 w, the amount of A1.
【％としたのは
、０．５ｗｔ％未満では前記結晶粒微細化作用が殆ど認
められず、４０ｗｔ％超では相対的にＡ１．０．量が減
少し耐食性等の劣下を招くようになるからである。
前記ＳｉＣウィスカのＯ量を０．３〜１．５ｗｔ％にす
ると、溶媒中での分散性が高まり、ウィスカを均一分散
したスラリか容易に得られる。そのため、スラリとＡＩ
！０３粉末及び炭化物等とを短時間混合するだけで、Ｓ
ｉＣウィスカか均一に分散された混合体か容易に帰られ
る。従って、混合体焼結の際の粗大結晶生成を確実に防
止し得ると共に、上記の如く短時間の混合でよいので針
状ＳｉＣウィスカの欠損を確実に防止し得、その結果セ
ラミックスの強度及び靭性をより向上し、安定化し得る
。このとき、上記０量が０．３ｗｔ％未満ではＳｉＣウ
ィスカの均一分散性の低下に伴って強度及び靭性が低下
し、１．５ｗｔ％超では高温強度か低下する。
前記炭化物等の一部かＡＩＪｔ結晶粒内にナノオーダで
分散してナノコンポジット構造を呈するようにすると、
ＳｉＣウィスカの繊維強化作用と、炭化物等のナノ分散
強化作用との相乗作用効果により、さらにセラミックス
の強度及び靭性を向上し得るようになるのでよい。
更に、セラミックスの原料混合体中に焼結助剤としてＭ
ｇＯ，Ｚｒ０ｔ、 Ｔｉｎｔ、ＹｔＯｓ、 Ｃｒｔｌｌ
、 Ｎｉｐ、 Ｃｒ５Ｃｔの１種または２種以上を０．
１−１０ｗｔ％含むようにすると、焼結をより促進し得
ると共に焼結組織を微細化且つ均一化し得るのでよい。
含有量が０．１ｗｔ％未満では上記効果か小さく、ｔｏ
ｗｔ％超では焼結体の硬度、高温強度及び熱衝撃性か低
下するようになるので、０．１−１０ｗｔ％にするのが
よい。
（実施例）
実施例１
ＡＩｔｏ、粉末に炭化物等を添加、或いはさらに焼結助
剤を添加し、湿式ミルにより２０時間攪拌・混合し、混
合物を得た。一方、０量を調整したＳｉＣウィスカを溶
媒に添加し、超音波エネルギを３０分間付与し、スラリ
を得た。
上記スラリと混合物とを湿式ミルにより２０時間攪拌・
混合した後、スプレードライヤにより乾燥・造粒した。
このようにして得た混合粉末を、黒鉛型に詰め込み、Ａ
ｒ気流中にて１８５０’Ｃ，２００Ｋｇ／ｃｍ”３０分
間の条件で、ホットプレスにより一軸加圧焼結し、Ｓｉ
Ｃウィスカ及び炭化物等、或いはさらに焼結助剤を含む
Ａ１．０．基セラミックスを得た。
これらのセラミックスは、いづれも本発明に係るＡ１．
０．基セラミックスである。尚、ＳｉＣウィスカ添加量
、炭化物等添加量及び焼結助剤添加量は第１表に示す如
く変化させ、ＳｉＣウィスカ中０量は全て０． ａｗｔ
％である。
このようにして得たＡｌ２Ｏ２基セラミツクスについて
、室温での抗折強度および高温（１４００°Ｃ）での抗
折強度の測定を行った。その結果を第１表に示す。
又、透過型電子顕微鏡により焼結体の組織観察を行った
ところ、全て炭化物等かＡｌ２ｏ、結晶粒内にナノオー
ダで分散し、ナノ複合組織（ナノコンポジット構造）を
呈している事か確認された。
比較例１
実施例１と同様の方法（操作、手順、条件）により、炭
化物等及びＳｉＣウィスカを含むＡｌ２０１基セラミツ
クスを得た。
第２表に、比較例１に係るセラミックスについての炭化
物等及びＳｉＣウィスカの添加量を、機械的特性と共に
示す。第２表に示す如く、比較例Ｉに係るセラミックス
は、炭化物等の添加量或いはＳｉＣウィスカ中０量、Ｓ
ｉＣウィスカの添加量や、焼結助ｉ１Ｎ添加量が、本発
明に係るＡ１□０．基セラミックスと異なるものである
。
得られたＡｌ２Ｏ３基セラミツクスについて、実施第
■
表
第
表
釘、舶）
例】と同様の測定を行った。その結果を第２表に示す。
（発明の効果）
本発明に係るＡＩ、０２基セラミツクスは、結晶粒微細
化作用を存する炭化物等をＳｉＣウィスカと共に含育し
ているので、常に安定してＳｉＣウィスカの高強度・高
靭性化の作用効果か発揮されると共に、炭化物等により
結晶粒か微細化され、その結果極めて高い強度及び靭性
を育し得る。そのため、本発明に係るＡｌｔｏｓ基セラ
ミックスによれば、従来のＡ１．０．基セラミックスに
比し、高い強度及び靭性か常に安定して得られ、更に、
Ｓ：ｘＮ＋等のセラミックスに比し、同等もしくはそれ
以上の高い強度及び靭性も得られるようになる。
特許出願人 株式会社 神戸製鋼折
代 理 人 弁理士 金丸 章−[%] is because if it is less than 0.5 wt%, the grain refining effect is hardly observed, and if it is more than 40 wt%, it is relatively A1.0. This is because the amount decreases, leading to deterioration in corrosion resistance and the like. When the amount of O in the SiC whiskers is 0.3 to 1.5 wt%, the dispersibility in the solvent increases, and a slurry in which whiskers are uniformly dispersed can be easily obtained. Therefore, slurry and AI
! 03 By simply mixing powder, carbide, etc. for a short time, S
iC whiskers or a homogeneously dispersed mixture can be easily returned. Therefore, it is possible to reliably prevent the formation of coarse crystals during sintering of the mixture, and since only a short mixing time is required as described above, it is possible to reliably prevent the loss of acicular SiC whiskers, and as a result, the strength and toughness of the ceramic can be improved. can be further improved and stabilized. At this time, if the amount of 0 is less than 0.3 wt%, the strength and toughness will decrease as the uniform dispersibility of SiC whiskers decreases, and if it exceeds 1.5 wt%, the high temperature strength will decrease. When a part of the carbide etc. is dispersed in nano-order within the AIJt crystal grains to form a nanocomposite structure,
The synergistic effect of the fiber reinforcing effect of SiC whiskers and the nano-dispersed reinforcing effect of carbides or the like makes it possible to further improve the strength and toughness of the ceramic. Furthermore, M is added as a sintering aid in the ceramic raw material mixture.
gO, Zr0t, Tint, YtOs, Crtll
, Nip, Cr5Ct or more.
It is preferable to contain 1 to 10 wt %, since this can further promote sintering and make the sintered structure finer and more uniform. When the content is less than 0.1 wt%, the above effect is small, and to
If it exceeds wt%, the hardness, high-temperature strength, and thermal shock resistance of the sintered body will decrease, so it is preferably 0.1 to 10 wt%. (Examples) Example 1 A carbide or the like was added to the Alto powder, or a sintering aid was further added, and the mixture was stirred and mixed in a wet mill for 20 hours to obtain a mixture. On the other hand, SiC whiskers whose amount was adjusted to 0 were added to the solvent, and ultrasonic energy was applied for 30 minutes to obtain a slurry. The above slurry and mixture were stirred for 20 hours using a wet mill.
After mixing, the mixture was dried and granulated using a spray dryer. The mixed powder thus obtained was packed into a graphite mold, and A
The Si
A1.0.C containing whiskers, carbides, etc., or further containing a sintering aid. Base ceramics were obtained. These ceramics are all A1.
0. It is a base ceramic. The amount of SiC whisker added, the amount of carbide added, and the amount of sintering aid added were varied as shown in Table 1, and all amounts of 0 in SiC whisker were 0. awt
%. For the Al2O2-based ceramic thus obtained, the bending strength at room temperature and the bending strength at high temperature (1400°C) were measured. The results are shown in Table 1. In addition, when the structure of the sintered body was observed using a transmission electron microscope, it was confirmed that all carbides or Al2O were dispersed in the nano-order within the crystal grains, exhibiting a nanocomposite structure. . Comparative Example 1 By the same method (operation, procedure, conditions) as in Example 1, Al201-based ceramics containing carbides, etc. and SiC whiskers was obtained. Table 2 shows the amounts of carbides, etc. and SiC whiskers added to the ceramics according to Comparative Example 1, together with the mechanical properties. As shown in Table 2, the ceramics according to Comparative Example I had an additive amount of carbide, etc., or 0 amount of S in the SiC whisker.
The amount of iC whiskers added and the amount of sintering aid i1N added are A1□0. It is different from base ceramics. The obtained Al2O3-based ceramics were subjected to the same measurements as in Table 1 (Example). The results are shown in Table 2. (Effects of the Invention) Since the AI, 02-based ceramics according to the present invention contain carbides, etc. that have a crystal grain refining effect together with SiC whiskers, they can always stably improve the strength and toughness of SiC whiskers. In addition to exerting its effects, the crystal grains are made finer by carbides, etc., and as a result, extremely high strength and toughness can be developed. Therefore, according to the Altos-based ceramic according to the present invention, the conventional A1.0. Compared to base ceramics, high strength and toughness can always be obtained stably, and
Compared to ceramics such as S:xN+, it is possible to obtain high strength and toughness equivalent to or higher than that of ceramics such as S:xN+. Patent applicant: Kobe Steel Oriyoshi Co., Ltd. Patent attorney: Akira Kanemaru
Claims (3)
ｉ、Ｖ、Ｃｒ、Ｚｒ、Ｎｂ、Ｍｏ、Ｈｆ、Ｔａ、Ｗの炭
化物、窒化物、炭窒化物の１種または２種以上を０．５
〜４０ｗｔ％含むα型Ａｌ＿２Ｏ＿３焼結体よりなるこ
とを特徴とするＡｌ＿２Ｏ＿３基セラミックス。(1) Contains 3 to 40 wt% of SiC whiskers, and
i, V, Cr, Zr, Nb, Mo, Hf, Ta, W carbide, nitride, carbonitride or more of 0.5
An Al_2O_3-based ceramic comprising an α-type Al_2O_3 sintered body containing ~40 wt%.
％である請求項１に記載のＡｌ＿２Ｏ＿３基セラミック
ス。(2) The amount of O in the SiC whisker is 0.3 to 1.5wt
%. The Al_2O_3-based ceramic according to claim 1.
以上の一部かＡｌ＿２Ｏ＿３結晶粒内にナノオーダで分
散してナノコンポジット構造を呈する請求項１又は請求
項２に記載のＡｌ＿２Ｏ＿３基セラミックス。(3) The Al_2O_3 group according to claim 1 or claim 2, wherein a part of one or more of the carbides, nitrides, and carbonitrides is dispersed in the nano-order within the Al_2O_3 crystal grains to form a nanocomposite structure. Ceramics.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2128254A JPH0426542A (en) | 1990-05-17 | 1990-05-17 | Al2o3-based ceramics |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2128254A JPH0426542A (en) | 1990-05-17 | 1990-05-17 | Al2o3-based ceramics |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0426542A true JPH0426542A (en) | 1992-01-29 |
Family
ID=14980307
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2128254A Pending JPH0426542A (en) | 1990-05-17 | 1990-05-17 | Al2o3-based ceramics |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0426542A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001009966A3 (en) * | 1999-08-03 | 2001-07-05 | T J Technologies Inc | Nanodispersed multiphase materials, and electrodes and batteries made therefrom |
| JP2002356367A (en) * | 2001-03-29 | 2002-12-13 | Taiheiyo Cement Corp | Low thermal expansion ceramic and its manufacturing method |
-
1990
- 1990-05-17 JP JP2128254A patent/JPH0426542A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6524744B1 (en) | 1998-12-07 | 2003-02-25 | T/J Technologies, Inc. | Multi-phase material and electrodes made therefrom |
| WO2001009966A3 (en) * | 1999-08-03 | 2001-07-05 | T J Technologies Inc | Nanodispersed multiphase materials, and electrodes and batteries made therefrom |
| JP2002356367A (en) * | 2001-03-29 | 2002-12-13 | Taiheiyo Cement Corp | Low thermal expansion ceramic and its manufacturing method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5123935A (en) | Al2 o3 composites, process for producing them and throw-away tip made of al2 o3 composites | |
| US7008893B2 (en) | Silicon nitride-based composite sintered body and producing method thereof | |
| US5182059A (en) | Process for producing high density SiC sintered bodies | |
| US5418197A (en) | SiC whisker and particle reinforced ceramic cutting tool material | |
| US4980104A (en) | Method for producing high density SiC sintered body | |
| EP0170864A2 (en) | ZrB2 Composite sintered material | |
| JPH0526746B2 (en) | ||
| EP0170889A2 (en) | ZrB2 Composite sintered material | |
| US5360772A (en) | Ceramic material reinforced by the incorporation of TiC, TiCN and TiN whiskers and processes for production thereof | |
| KR20210088361A (en) | Method for Preparing Silicon Nitride Sintered Body and The Silicon Nitride Sintered Body Prepared by The Same | |
| JPH04223808A (en) | Silicon nitride sintered body tool | |
| JPS61146762A (en) | Antiabrasive silicon nitride base product | |
| JPH0137348B2 (en) | ||
| Yu et al. | Relationship between Microstructure and Mechanical Performance of a 70% Silicon Nitride–30% Barium Aluminum Silicate Self‐Reinforced Ceramic Composite | |
| JPH06345523A (en) | Alumina-based ceramics | |
| JPH02124761A (en) | Al2o3-based ceramics | |
| Fh | Effect of iron and silicon addition on the densification, microstructure and mechanical properties of silicon nitride | |
| JP2997320B2 (en) | Fiber reinforced ceramics | |
| JPH1129361A (en) | Silicon nitride sintered product and its production | |
| JP2746441B2 (en) | A1 Lower 2 O Lower 3 Manufacturing method of base ceramics | |
| JPH04243960A (en) | Composite ceramics | |
| JPH04124058A (en) | Al2o3-based ceramic | |
| DE19806203C2 (en) | Composite material and method for its production | |
| JPS63282161A (en) | Sintered silicon carbide body and its production | |
| JP2794121B2 (en) | Fiber reinforced ceramics |