JPH0426780B2 - - Google Patents
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- Publication number
- JPH0426780B2 JPH0426780B2 JP62032859A JP3285987A JPH0426780B2 JP H0426780 B2 JPH0426780 B2 JP H0426780B2 JP 62032859 A JP62032859 A JP 62032859A JP 3285987 A JP3285987 A JP 3285987A JP H0426780 B2 JPH0426780 B2 JP H0426780B2
- Authority
- JP
- Japan
- Prior art keywords
- vapor
- hmds
- semiconductor substrate
- substrate
- hexamethyldisilazane
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
【発明の詳細な説明】
〔発明の目的〕
（産業上の利用分野）
本発明は、半導体基板表面処理方法に関し、よ
り詳しくは、ヘキサメチルジシラザン（以下、
HMDSという。）によつて半導体基板表面を処理
する半導体基板表面処理方法に関する。[Detailed Description of the Invention] [Object of the Invention] (Industrial Application Field) The present invention relates to a method for treating the surface of a semiconductor substrate, and more particularly, the present invention relates to a method for treating the surface of a semiconductor substrate, and more particularly, the present invention relates to a method for treating the surface of a semiconductor substrate.
It's called HMDS. ) relates to a semiconductor substrate surface treatment method for treating the surface of a semiconductor substrate.
（従来の技術）
一般に、半導体装置製造工程におけるレジスト
液塗布工程では、レジスト液と半導体基板の密着
性をよくするため、レジスト液塗布前に半導体基
板の表面をHMDSで処理することが行われてい
る。(Prior art) Generally, in the resist solution application process in the semiconductor device manufacturing process, the surface of the semiconductor substrate is treated with HMDS before applying the resist solution in order to improve the adhesion between the resist solution and the semiconductor substrate. There is.
その処理方法として、従来、反応容器と蒸発器
とを分離した状態に設け、その蒸発器内に収容し
たHMDS液の液面からHMDS蒸気を自然蒸発さ
せ、そのHMDS蒸気を反応容器に導いて、半導
体基板の表面をHMDS蒸気で処理するようにし
たものがある。 Conventionally, as a treatment method, a reaction vessel and an evaporator are provided in a separated state, HMDS vapor is naturally evaporated from the liquid level of the HMDS liquid contained in the evaporator, and the HMDS vapor is guided to the reaction vessel. There is a method in which the surface of a semiconductor substrate is treated with HMDS vapor.
（発明が解決しようとする問題点）
その方法においては、一般に、HMDS蒸気の
蒸発量を十分なものとしてその蒸気を反応容器に
安定的に連続供給するため、HMDS液をバブリ
ングすることによりHMDS蒸気を作つていた。
そのバブリングにより、HMDS蒸気中には、か
なり多くのHMDSミストが含まれるのが避けら
れなかつた。そのため、半導体表面には、ミスト
が付くところた付かないところができ、処理効果
にむらが生じていた。これにより、同一半導体基
板の表面であつても、場所により処理効果に差が
生じていた。(Problems to be Solved by the Invention) In this method, generally, in order to ensure a sufficient amount of evaporation of HMDS vapor and to stably and continuously supply the vapor to the reaction vessel, HMDS vapor is vaporized by bubbling the HMDS liquid. was making.
Due to the bubbling, it was inevitable that the HMDS vapor contained a considerable amount of HMDS mist. As a result, the semiconductor surface has areas where the mist is attached and areas where it is not, resulting in uneven processing effects. As a result, even on the surface of the same semiconductor substrate, the processing effect varies depending on the location.
また、一般に、HMDS蒸気による半導体基板
の処理においては、処理基準を処理効果の小さな
ところにおかれている。而して、上述したよう
に、ミストを含んだHMDS蒸気による処理にお
いては、半導体基板表面の場所によつて処理効果
が異なる。そのため、処理効果の小さなところが
処理基準に達した際には、他の部分はより進んだ
状態に処理されることとなる。これはHMDSの
無駄使いを意味する。 Furthermore, in general, when processing a semiconductor substrate using HMDS vapor, the processing standard is set at a point where the processing effect is small. As described above, in the treatment using HMDS vapor containing mist, the treatment effect differs depending on the location on the semiconductor substrate surface. Therefore, when a portion with a small processing effect reaches the processing standard, other portions will be processed in a more advanced state. This means a waste of HMDS.
本発明の第１の目的は、少ないHMDSにより
半導体基板表面の全体を均一に処理する方法を提
供することにある。 A first object of the present invention is to provide a method for uniformly processing the entire surface of a semiconductor substrate using a small amount of HMDS.
さらに、従来は、HMDS蒸気が半導体基板の
表面に均一に供給されず、その基板の表面に処理
むらが生じるという欠点があつた。これは、
HMDSの無駄使いにもつながる。 Furthermore, conventional techniques have had the disadvantage that HMDS vapor is not uniformly supplied to the surface of a semiconductor substrate, resulting in uneven processing on the surface of the substrate. this is,
This also leads to wasteful use of HMDS.
本発明の第２の目的は、蒸気第１の目的に加
え、HMDS蒸気により半導体基板の表面を
HMDSを効率良く使用して、均一的に処理する
ことにある。 In addition to the first objective of the present invention, the second objective of the present invention is to dry the surface of a semiconductor substrate using HMDS vapor.
The goal is to use HMDS efficiently and process it uniformly.
さらに、従来は、HMDS蒸気を単に半導体基
板の表面に導くようにしていたが、これでは、処
理時間を司るHMDS蒸気の物質拡散速度、即ち
HMDS蒸気からHMDSが物質拡散によつて半導
体基板の表面に至る速度に限りがあるため、処理
に時間がかかるという欠点があつた。処理時間を
短縮しようとして、半導体基板を昇温することも
行われている。しかしながら、昇温によつては、
処理時間の短縮効果が十分に得られないだけでな
く、HMDSの引火点が低いことから、昇温手段
は好ましくない。 Furthermore, in the past, the HMDS vapor was simply introduced to the surface of the semiconductor substrate, but in this case, the material diffusion rate of the HMDS vapor, which controls the processing time,
Since there is a limit to the speed at which HMDS reaches the surface of the semiconductor substrate from the HMDS vapor through material diffusion, it has the disadvantage that processing takes time. Elevating the temperature of a semiconductor substrate is also being carried out in an attempt to shorten processing time. However, depending on the temperature increase,
Temperature raising means is not preferred because not only is the effect of shortening the processing time insufficient, but also the flash point of HMDS is low.
本発明の第３の目的は、前段第１及び第２の目
的に加え、半導体基板を昇温することなく、処理
時間を短縮することにある。 A third object of the present invention, in addition to the first and second objects of the preceding stage, is to shorten the processing time without increasing the temperature of the semiconductor substrate.
（問題点を解決するための手段）
本発明は、毛細管現象によりヘキサメチルジシ
ラザン液を吸い上げる機能を有し、且つ一部がヘ
キサメチルジシラザン液内に位置し、他部がヘキ
サメチルジシラザン液外に位置する蒸発面積拡大
部材を有する蒸発器で自然蒸発によりヘキサメチ
ルジシランザン蒸気を生成し、前記蒸発器で生成
したヘキサメチルジシラザン蒸気を、処理対象と
しての回転する半導体基板の表面に向い合う連通
気泡形多孔質材製の拡散板を通過させて、前記蒸
気を前記基板の表面に均一に供給し、前記半導体
基板の回転によりヘキサメチルジシラザン蒸気に
より前記半導体基板の表面を均一に処理するよう
にした、ものとして構成される。
(Means for Solving the Problems) The present invention has a function of sucking up a hexamethyldisilazane solution by capillary action, and a part of the hexamethyldisilazane solution is located within the hexamethyldisilazane solution, and the other part is located within the hexamethyldisilazane solution. Hexamethyldisilazane vapor is generated by natural evaporation in an evaporator having an evaporation area expanding member located outside the liquid, and the hexamethyldisilazane vapor generated in the evaporator is applied to the surface of a rotating semiconductor substrate to be processed. The vapor is uniformly supplied to the surface of the substrate by passing through opposing diffuser plates made of open-cell porous material, and the surface of the semiconductor substrate is uniformly coated with the hexamethyldisilazane vapor by rotating the semiconductor substrate. It is constructed as something that is processed.
（作用）
蒸発面積拡大部材を有する蒸発器からヘキサメ
チルジシラザン蒸気が蒸発する。その蒸気は拡散
板を通過して半導体基板表面に向う。拡散板と前
記基板とは向い合つているため、前記蒸気は前記
基板の表面に均一に供給される。而して、前記基
板は回転しているため、前記基板表面上の前記蒸
気の流れは均一的なものとなり、前記蒸気が前記
基板の表面の特定部分を流れるのは防止され、前
記基板表面は前記蒸気により均一に処理される。(Function) Hexamethyldisilazane vapor evaporates from the evaporator having the evaporation area enlarging member. The vapor passes through the diffusion plate and heads toward the surface of the semiconductor substrate. Since the diffusion plate and the substrate face each other, the vapor is uniformly supplied to the surface of the substrate. Since the substrate is rotating, the flow of the vapor on the surface of the substrate is uniform, and the vapor is prevented from flowing over a specific part of the surface of the substrate, and the surface of the substrate is It is uniformly treated by the steam.
（実施例）
第１図は、本発明の実施例に使用する装置の一
例を示すものである。(Example) FIG. 1 shows an example of an apparatus used in an example of the present invention.
同図において、窒素ガス供給源１からの窒素ガ
スN2は窒素ガスライン２を通して蒸発器３の入
口ポート４ａに流入する。窒素ガスN2は蒸発器
３内を通り、蒸発器３内に半分程度封入された
HMDS液５から発生したHMDS蒸気を含んだ状
態で出口ポート４ｂからHMDS蒸気ライン６に
流出する。 In the figure, nitrogen gas N 2 from a nitrogen gas source 1 flows through a nitrogen gas line 2 into an inlet port 4 a of an evaporator 3 . Nitrogen gas N 2 passed through the evaporator 3, and about half of it was filled in the evaporator 3.
The HMDS liquid 5 flows out from the outlet port 4b into the HMDS vapor line 6 in a state containing HMDS vapor generated from the HMDS liquid 5.
即ち、この蒸発器３は、第１図及び第２図から
明らかなように、入口ポート４ａ、出口ポート４
ｂを備えた蒸発器３内に、連通気泡形多孔質材製
の蒸発面積拡大部材としての端板８ａ，８ｂ、側
板９ａ，９ｂ、仕切板１０ａ〜１０ｃを設けたも
のとして構成される。仕切板１０ａ〜１０ｃによ
つて区画された区画室１１ａ〜１１ｄは、仕切板
１０ａ〜１０ｃと側板９ａ、又は側板９ｂとの間
に形成された〓間１２ａ〜１２ｃを介して順次連
通している。〓間１２ａ〜１２ｃは互い違いの位
置関係にあり、そのため入口ポート４ａに通じる
区画室１１ａと、出口ポート４ｂに通じる区画室
１１ｄとは、蛇行した状態で長い距離を介して連
通している。 That is, as is clear from FIGS. 1 and 2, this evaporator 3 has an inlet port 4a and an outlet port 4.
The evaporator 3 is provided with end plates 8a, 8b, side plates 9a, 9b, and partition plates 10a to 10c as evaporation area enlarging members made of open-cell porous material. The compartments 11a to 11d partitioned by the partition plates 10a to 10c are sequentially communicated via gaps 12a to 12c formed between the partition plates 10a to 10c and the side plate 9a or 9b. . The spaces 12a to 12c are in an alternating positional relationship, so that the compartment 11a communicating with the inlet port 4a and the compartment 11d communicating with the outlet port 4b communicate with each other over a long distance in a meandering manner.
このように構成された蒸発器３内にはHMDS
液５が半分程度封入されている。このHMDS液
５は多孔質材製の各板８ａ，８ｂ，９ａ，９ｂ，
１０ａ〜１０ｃにより毛細管現象に基づいて吸い
上げられ、それらの各板の表面を濡らすことにな
る。従つて、HMDS液の蒸発面積は、HMDS液
の表面の面積だけでなく、その面積に、多孔質材
製の前記各板のHMDS液から突出した部分の表
面積が加えられた大きなものとして構成される。
このため、前記大きな蒸発面積部分からHMDS
蒸気が蒸発し、蒸発器３の区画室１１ａ〜１１ｄ
内には十分な量のHMDS蒸気が充満する。この
状態において、入口ポート４ａから区画室１１ａ
に流入する窒素ガスN2は、〓間１２ａ〜１２ｃ
を順次通つて各区画室１１ａ〜１１ｄを流れ、十
分な量のHMDS蒸気を含んで出口ポート４ｂか
らHMDS蒸気ライン６へ流出する。 In the evaporator 3 configured in this way, HMDS
About half of the liquid 5 is sealed. This HMDS liquid 5 is applied to each plate 8a, 8b, 9a, 9b made of porous material.
10a to 10c based on capillary action, and wets the surface of each of the plates. Therefore, the evaporation area of the HMDS liquid is determined not only by the surface area of the HMDS liquid, but also by adding to that area the surface area of the portions of the porous plates that protrude from the HMDS liquid. Ru.
For this reason, HMDS is removed from the large evaporation area.
The steam evaporates and the compartments 11a to 11d of the evaporator 3
A sufficient amount of HMDS vapor fills inside. In this state, from the inlet port 4a to the compartment 11a
The nitrogen gas N 2 flowing into the space between 12a and 12c
through each compartment 11a-11d and exits from outlet port 4b to HMDS vapor line 6 containing a sufficient amount of HMDS vapor.
HMDS蒸気ライン６を流れるHMDS蒸気は、
均一で濃度の安定な状態で入口ポート（HMDS
蒸気吹き出し口）１５ａから反応容器１５に流入
し、半導体基板Ｓの表面がHMDS蒸気で処理さ
れる。 The HMDS steam flowing through the HMDS steam line 6 is
The inlet port (HMDS
The HMDS vapor flows into the reaction vessel 15 from the vapor outlet (15a), and the surface of the semiconductor substrate S is treated with the HMDS vapor.
即ち、反応容器１５の内部は連通気泡形形多孔
質材製の拡散板１６によつて拡散室１７と反応室
１８とに区画形成されている。この拡散室１７に
前記入口ポート（HMDS蒸気吹出し口）１５ａ
が開口しており、よつてHMDS蒸気ライン６か
らのHMDS蒸気は先ず拡散室１７に流入する。
拡散室１７に流入したHMDS蒸気は、拡散板１
６を通つて半導体基板Ｓの表面に均一な状態で達
する。 That is, the interior of the reaction vessel 15 is divided into a diffusion chamber 17 and a reaction chamber 18 by a diffusion plate 16 made of an open-cell porous material. The inlet port (HMDS steam outlet) 15a is connected to this diffusion chamber 17.
is open, so that HMDS vapor from the HMDS vapor line 6 first flows into the diffusion chamber 17.
The HMDS vapor that has flowed into the diffusion chamber 17 passes through the diffusion plate 1
6 and reaches the surface of the semiconductor substrate S in a uniform state.
前記半導体基板Ｓはモータ１９によつて回転さ
せられる回転ステージ２０上に設けられている。
このモータ１９によつて半導体基板Ｓを回転させ
ることにより、半導体基板Ｓの表面付近の雰囲気
が撹拌され、処理速度を司る境界層の厚みが薄く
なり、常に新鮮なHMDS蒸気が強制的に且つ効
率良く半導体基板表面に供給される。これによ
り、処理速度は向上する。また、半導体基板Ｓを
回転させることにより、HMDSによる半導体基
板Ｓの表面処理効果の均一性も向上する。 The semiconductor substrate S is provided on a rotation stage 20 that is rotated by a motor 19.
By rotating the semiconductor substrate S by this motor 19, the atmosphere near the surface of the semiconductor substrate S is agitated, the thickness of the boundary layer that controls the processing speed becomes thinner, and fresh HMDS vapor is always forcedly and efficiently supplied. It is well supplied to the surface of the semiconductor substrate. This improves processing speed. Further, by rotating the semiconductor substrate S, the uniformity of the surface treatment effect of the semiconductor substrate S by HMDS is also improved.
第３図は、従来の方法（蒸発はバブリングによ
り達成し、拡散板及びウエハー回転機構のない装
置を用いる。）と本発明の方法（第１図及び第２
図の装置を用いる。）のそれぞれによる処理性能
の比較を示すものである。第３図中に示した数値
は、HMDS処理したウエハー表面への水の接触
角を示す。接触角は、大きいほど処理効果が大き
い。 Figure 3 shows the conventional method (evaporation is achieved by bubbling and uses an apparatus without a diffuser plate and wafer rotation mechanism) and the method of the present invention (Figures 1 and 2).
Use the apparatus shown in the figure. ) shows a comparison of the processing performance of each. The numerical values shown in FIG. 3 indicate the contact angle of water on the wafer surface treated with HMDS. The larger the contact angle, the greater the treatment effect.
第３図から、処理速度は、従来の方法で60秒の
処理により得ていた接触角60°は、本発明では、
10秒の処理により得られるのがわかる。処理効果
の面内バラツキ（最大値−最小値）は、従来の方
法では最大10.5°であるのに対し、本発明ではそ
の1/3の2.9°であるのもわかる。 From FIG. 3, it can be seen that the processing speed is as follows: The contact angle of 60°, which was obtained by processing for 60 seconds in the conventional method, is
You can see what can be obtained by processing for 10 seconds. It can also be seen that the in-plane variation (maximum value - minimum value) in the processing effect is a maximum of 10.5° in the conventional method, whereas in the present invention it is 2.9°, which is one third of that.
このように、本発明の方法によれば、従来の方
法に較べ、処理速度が速く且つ処理効果の面内バ
ラツキが小さいという効果が得られる。 As described above, the method of the present invention has the advantage that the processing speed is faster and the in-plane variation in the processing effect is smaller than that of the conventional method.
本発明によれば、ヘキサメチルジシラザン
（HMDS）蒸気を、バブリングによつてではな
く、自然蒸発によつて生成している。このため、
生成された蒸気はミストを含まない、均一な蒸気
として得られる。このため、HMDS蒸気を生成
するのに、必要以上にHMDSが消費されること
はなく、HMDSの無駄使いは防止される。しか
も、この蒸気を処理対象としての半導体基板の表
面に向けて供給するに際し、その基板表面と対向
する拡散板を介して供給するようにしている。こ
のため、ミストを含まない均一な蒸気が、基板の
表面に均一に供給される。しかも、この基板は回
転している。このため、基板の表面付近の雰囲気
が撹拌され、その表面に接した動き（流れ）が必
要以上に大きくなく且つ基板表面との反応済の前
記蒸気を有する境界層の厚みが薄くなる。而し
て、一般に、前記蒸気と基板表面との化学反応
は、先ず基板表面に直接接触している境界層中の
前記蒸気が反応し終つた後は、境界層に隣り合つ
た雰囲気中の未反応の前記蒸気が境界層を拡散に
よつて伝搬して基板表面に達して反応が行われ
る。このため、本発明では蒸気のように基板の回
転により境界層が薄くなるようにしたので、基板
表面の処理速度は上昇する。さらに、基板の回転
により、基板表面上の雰囲気流が偏ることはな
く、均一に流れ、前記蒸気がミストを含まず且つ
拡散板を介して均一に基板表面に供給されること
と相俟つて、基板表面は均一に処理される。つま
り、本発明によれば、前記蒸気を使用した場合に
は困難であり、且つ処理時間の短縮には直接結び
つかない、加熱という手段を採ることなく、基板
の前記蒸気による処理時間を短縮できる。さら
に、基板表面上での雰囲気流の偏りを防ぐため
に、基板自体を回転させるようにして雰囲気自体
を強制的に流すという構成を採用しないようにし
た。このため、雰囲気の強制流を生じさせた場合
には各種の粉塵をまき上げるおそれがあるのに対
し、そのようなおそれは極めて少なく、製品の信
頼性を向上させることができる。
According to the present invention, hexamethyldisilazane (HMDS) vapor is generated not by bubbling but by natural evaporation. For this reason,
The generated steam does not contain mist and is obtained as uniform steam. Therefore, HMDS is not consumed more than necessary to generate HMDS vapor, and wasteful use of HMDS is prevented. Moreover, when this vapor is supplied toward the surface of the semiconductor substrate to be processed, it is supplied through a diffusion plate facing the surface of the substrate. Therefore, uniform vapor containing no mist is uniformly supplied to the surface of the substrate. Moreover, this board is rotating. Therefore, the atmosphere near the surface of the substrate is stirred, the movement (flow) in contact with the surface is not unnecessarily large, and the thickness of the boundary layer containing the vapor that has already reacted with the substrate surface is reduced. Generally, in the chemical reaction between the vapor and the substrate surface, first, after the vapor in the boundary layer in direct contact with the substrate surface has finished reacting, the chemical reaction occurs in the vapor in the atmosphere adjacent to the boundary layer. The reaction vapor propagates through the boundary layer by diffusion and reaches the substrate surface where the reaction takes place. For this reason, in the present invention, the boundary layer is thinned by rotating the substrate like steam, so that the processing speed of the substrate surface increases. Furthermore, due to the rotation of the substrate, the atmospheric flow on the substrate surface is not biased and flows uniformly, and the vapor does not contain mist and is uniformly supplied to the substrate surface via the diffusion plate. The substrate surface is uniformly treated. In other words, according to the present invention, the processing time of the substrate with the vapor can be shortened without using heating, which is difficult when using the vapor and does not directly lead to a reduction in the processing time. Furthermore, in order to prevent the atmospheric flow from being uneven on the surface of the substrate, a configuration in which the atmosphere itself is forced to flow by rotating the substrate itself is not adopted. Therefore, although there is a risk of stirring up various types of dust when a forced flow of atmosphere is generated, such a risk is extremely small, and the reliability of the product can be improved.
第１図は本発明の実施に使用する装置の一例を
示す一部断面説明図、第２図はその蒸発器の詳細
を示す斜視図、第３図は本発明の効果を確認する
ために行つた実験の結果を示す説明図である。
１……窒素ガス供給源、２……窒素ガスライ
ン、３……蒸発器、４ａ……入口ポート、４ｂ…
…出口ポート、５……HMDS液、６……HMDS
蒸気ライン、７……容器、８ａ，８ｂ……端板、
９ａ，９ｂ……側板、１０ａ，１０ｂ，１０ｃ…
…仕切板、１１ａ〜１１ｄ……区画室、１２ａ，
１２ｂ，１２ｃ……〓間、１５……反応容器、１
５ａ……入口ポート（HMDS蒸気吹き出し口）、
１６……拡散板、１７……拡散室、１８……反応
室、１９……モータ、２０……回転ステージ。
Fig. 1 is a partially cross-sectional explanatory diagram showing an example of an apparatus used to carry out the present invention, Fig. 2 is a perspective view showing details of the evaporator, and Fig. 3 is a diagram illustrating an example of a device used to carry out the present invention. FIG. 2 is an explanatory diagram showing the results of an experiment. DESCRIPTION OF SYMBOLS 1... Nitrogen gas supply source, 2... Nitrogen gas line, 3... Evaporator, 4a... Inlet port, 4b...
...Outlet port, 5...HMDS liquid, 6...HMDS
Steam line, 7... container, 8a, 8b... end plate,
9a, 9b... side plate, 10a, 10b, 10c...
...Partition plate, 11a to 11d...Divided room, 12a,
12b, 12c... Between, 15... Reaction vessel, 1
5a...Inlet port (HMDS steam outlet),
16...Diffusion plate, 17...Diffusion chamber, 18...Reaction chamber, 19...Motor, 20...Rotation stage.
Claims (1)
を吸い上げる機能を有し、且つ一部がヘキサメチ
ルジシラザン液内に位置し、他部がヘキサメチル
ジシラザン液外に位置する蒸発面積拡大部材を有
する蒸発器で自然蒸発によりヘキサメチルジシラ
ンザン蒸気を生成し、 前記蒸発器で生成したヘキサメチルジシラザン
蒸気を、処理対象としての回転する半導体基板の
表面に向い合う連通気泡形多孔質材製の拡散板を
通過させて、前記蒸気を前記基板の表面に均一に
供給し、前記半導体基板の回転によりヘキサメチ
ルジシラザン蒸気により前記半導体基板の表面を
均一に処理する ようにしたことを特徴とする半導体基板表面処理
方法。[Scope of Claims] 1. An evaporation area that has the function of sucking up the hexamethyldisilazane liquid by capillary action, and in which a part is located within the hexamethyldisilazane liquid and the other part is located outside the hexamethyldisilazane liquid. Hexamethyldisilazane vapor is generated by natural evaporation in an evaporator having an expanding member, and the hexamethyldisilazane vapor generated in the evaporator is transferred to an open-cell porous structure facing the surface of a rotating semiconductor substrate to be processed. The vapor is uniformly supplied to the surface of the substrate by passing through a diffusion plate made of wood, and the surface of the semiconductor substrate is uniformly treated with the hexamethyldisilazane vapor by rotating the semiconductor substrate. Characteristic semiconductor substrate surface treatment method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62032859A JPS63199423A (en) | 1987-02-16 | 1987-02-16 | Surface treating method for semiconductor substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62032859A JPS63199423A (en) | 1987-02-16 | 1987-02-16 | Surface treating method for semiconductor substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63199423A JPS63199423A (en) | 1988-08-17 |
| JPH0426780B2 true JPH0426780B2 (en) | 1992-05-08 |
Family
ID=12370570
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62032859A Granted JPS63199423A (en) | 1987-02-16 | 1987-02-16 | Surface treating method for semiconductor substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63199423A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020226160A1 (en) * | 2019-05-09 | 2020-11-12 | ナミックス株式会社 | Composite copper member |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3833232A1 (en) * | 1988-09-30 | 1990-04-05 | Leybold Ag | METHOD AND DEVICE FOR EVAPORATING MONOMERS LIQUID AT ROOM TEMPERATURE |
| US5332444A (en) * | 1992-11-25 | 1994-07-26 | Air Products And Chemicals, Inc. | Gas phase cleaning agents for removing metal containing contaminants from integrated circuit assemblies and a process for using the same |
| JP4901572B2 (en) * | 2007-04-27 | 2012-03-21 | Ｄｘアンテナ株式会社 | Push button structure in electronic equipment |
| KR100856331B1 (en) | 2007-05-21 | 2008-09-04 | 주식회사 케이씨텍 | Desiccant Feeder |
| JP4952610B2 (en) * | 2008-02-15 | 2012-06-13 | 東京エレクトロン株式会社 | Substrate processing apparatus, substrate processing method, and storage medium |
| JP6298690B2 (en) * | 2014-04-09 | 2018-03-20 | 株式会社ディスコ | Method for forming protective film |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AR220507A1 (en) * | 1975-09-26 | 1980-11-14 | Albany Int Corp | DEVICE TO SPREAD A VAPORIZABLE MATERIAL BY DIFFUSION OF STEAM, IN A DEFAULT PROPORTION |
| JPS558583A (en) * | 1979-03-02 | 1980-01-22 | Toshiba Corp | Steam generator |
| JPS5753933A (en) * | 1980-09-18 | 1982-03-31 | Toshiba Corp | Manufacture of semiconductor element |
| JPS58190027A (en) * | 1982-04-30 | 1983-11-05 | Nec Kyushu Ltd | Semiconductor substrate organic processing apparatus |
| JPS5929679U (en) * | 1982-08-18 | 1984-02-24 | 三洋電機株式会社 | evaporator |
| JPS59175122A (en) * | 1983-03-23 | 1984-10-03 | Nec Corp | Before-coating processing device for semiconductor wafer |
| JPS59228719A (en) * | 1983-06-10 | 1984-12-22 | Hitachi Tokyo Electronics Co Ltd | Method and apparatus for manufacturing electronic element |
-
1987
- 1987-02-16 JP JP62032859A patent/JPS63199423A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020226160A1 (en) * | 2019-05-09 | 2020-11-12 | ナミックス株式会社 | Composite copper member |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63199423A (en) | 1988-08-17 |
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