JPH0427298B2 - - Google Patents

Info

Publication number
JPH0427298B2
JPH0427298B2 JP63006542A JP654288A JPH0427298B2 JP H0427298 B2 JPH0427298 B2 JP H0427298B2 JP 63006542 A JP63006542 A JP 63006542A JP 654288 A JP654288 A JP 654288A JP H0427298 B2 JPH0427298 B2 JP H0427298B2
Authority
JP
Japan
Prior art keywords
weight
masking
wax
present
chlorinated paraffin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP63006542A
Other languages
Japanese (ja)
Other versions
JPH01184282A (en
Inventor
Sakae Nishama
Masaru Tanibuchi
Yoshinori Fujii
Mamoru Nomura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NISHAMA STAINLESS CHEM KK
Original Assignee
NISHAMA STAINLESS CHEM KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NISHAMA STAINLESS CHEM KK filed Critical NISHAMA STAINLESS CHEM KK
Priority to JP63006542A priority Critical patent/JPH01184282A/en
Publication of JPH01184282A publication Critical patent/JPH01184282A/en
Publication of JPH0427298B2 publication Critical patent/JPH0427298B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/02—Local etching
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
    • C25D11/02—Anodisation
    • C25D11/022—Anodisation on selected surface areas
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L91/00—Compositions of oils, fats or waxes; Compositions of derivatives thereof
    • C08L91/06—Waxes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1603—Process or apparatus coating on selected surface areas
    • C23C18/1605—Process or apparatus coating on selected surface areas by masking
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/02—Electroplating of selected surface areas
    • C25D5/022—Electroplating of selected surface areas using masking means
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F3/00—Electrolytic etching or polishing
    • C25F3/02—Etching
    • C25F3/14—Etching locally

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Electrochemistry (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Electroplating Methods And Accessories (AREA)
  • ing And Chemical Polishing (AREA)

Description

【発明の詳細な説明】[Detailed description of the invention]

〔産業上の利用分野〕 本発明は、メツキ、電解研磨、陽極酸化、エツ
チング等の表面処理をするにあたり、この表面処
理をされずに保護されるべき部分を耐薬品性の膜
で被覆（マスク）するのに使用されるマスキング
剤に関する。 〔従来技術〕 従来、マスキング剤としては、ゴム系のものが
使用されていた。 このものは、ネオプレンゴム、スチレンブタジ
エンゴム等を主剤とするが、ゴム単体では流動性
に乏しく被覆力が劣るため、アセトン等の有機溶
剤に溶解して、流動性を付与したものが市販され
ていた。 〔発明が解決しようとする課題〕 前記従来のマスキング剤では、一般に毒性を有
している有機溶剤を用いているため、人体の健康
に及ぼす害が問題となつていた。また、有機溶剤
には、揮発性、引火性、爆発性の大きいものが多
く、この場合、火災等の事故発生の危険性も問題
となつていた。更に、流動性が大きいため、所望
の被覆膜厚を得るためには、浸漬および乾燥を数
回繰り返す必要があり、操作が煩雑であるという
欠点があつた。 本発明は、以上の事情に鑑みてなされたもので
あつて、有機溶剤を含まず安全、無害であつて、
マスキングが容易に行なえるマスキング剤を提供
することを目的とする。 〔課題を解決するための手段〕 本発明に係るマスキング剤は、塩素化パラフイ
ン20〜70重量％、マイクロクリスタリンワツク
ス，モンタンワツクス，オゾケライト又はセレシ
ン20〜60重量％、ポリエチレンワツクス10〜40重
量％からなる混合物を主成分として含むことを特
徴とする。 〔実施例〕 以下、本発明は、配合例を示した実施例に基づ
き具体的に説明する。 メツキ用マスキング剤の配合例 塩素化パラフイン 20〜50重量％ マイクロクリスタリンワツクス 20〜40重量％ ポリエチレンワツクス 30〜40重量量％ ここで、塩素化パラフインは、マスキング剤に
耐薬品性を付与する成分であり、前記の配合量が
望まれるのは、20重量％より少なければ耐薬品性
を付与する効果が小さく、一方50重量％を越える
と表面処理後のマスキング剤の剥離が困難となる
からである。 また、マイクロクリスタリンワツクスは、融点
が60゜〜96℃のものが使用され、前記の配合量が
望まれるのは、20重量％より少なければマスキン
グ剤の軟化点が低下し、被マスキング材に前処理
を施す段階でマスキング剤が剥離され、一方40重
量％を越えると、表面処理後の剥離が困難となる
からである。 ポリエチレンワツクスは、マスキング剤に粘性
を付与する為のものであり、30重量％より少なけ
れば被覆膜の膜厚が薄くなりすぎ一方40重量％を
越えると厚くなりすぎて不経済であり、後処理で
の剥離が困難となるからである。 エツチング用マスキング剤の配合例 塩素化パラフイン 50〜70重量％ マイクロクリスタリンワツクス 20〜30重量％ ポリエチレンワツクス 10〜20重量％ ここで、塩素化パラフイン、マイクロクリスタ
リンワツクスおよびポリエチレンワツクスの配合
目的は、前記と同様である。 エツチング液は腐食性が強い。このため、マス
キング剤にも高い耐薬品性が要求されるため、前
記配合例に示すように、塩素化パラフインの配合
量を多くすることが望ましい。 電解研磨用マスキング剤の配合例 塩素化パラフイン 20〜30重量％ マイクロクリスタリンワツクス 50〜60重量％ ポリエチレンワツクス 20〜30重量％ ここで、塩素化パラフイン、マイクロクリスタ
リンワツクス及びポリエチレンワツクスの配合目
的は、前記と同様である。電解研磨用マスキング
剤は、マスキング部に電気絶縁性が要求されるた
め、前記配合例に示すように、その破壊電圧が大
きい（60〜80KV）マイクロクリスタリンの配合
量を多くすることが望ましい。 前記各配合例は、標準的な配合例を示したもの
であり、この発明では、前記配合比のマスキング
剤に限定されるものでないことは、もとよりであ
る。 なお、マイクロクリスタリンワツクスに代えて
鉱物系ワツクスであるモンタンワツクス，オゾケ
ライト，セレシンを用いてもよい。 また、ワツクスのマスキング剤としての効能を
妨げるものでない限り、他の成分、例えば充填剤
等を含有するものであつても構わない。 第１表は、本発明に係るマスキング剤（以下、
本発明品という）を用いてマスキングを行つた場
合の浸漬時間Ｔ（分）における被覆膜の厚みＳ
（mm）を示す。 [Industrial Field of Application] The present invention is applicable to surface treatments such as plating, electrolytic polishing, anodizing, etching, etc., by covering the areas to be protected without being subjected to surface treatment with a chemical-resistant film (mask). ) related to masking agents used for [Prior Art] Conventionally, rubber-based masking agents have been used. The main ingredients of this material are neoprene rubber, styrene-butadiene rubber, etc., but rubber alone has poor fluidity and poor covering power, so it is not commercially available that has been dissolved in an organic solvent such as acetone to give fluidity. Ta. [Problems to be Solved by the Invention] Since the conventional masking agents described above generally use organic solvents that are toxic, there has been a problem of harm to human health. Moreover, many organic solvents are highly volatile, flammable, and explosive, and in this case, the risk of accidents such as fires has also been a problem. Furthermore, because of its high fluidity, it is necessary to repeat dipping and drying several times in order to obtain a desired coating thickness, which has the disadvantage of complicating operations. The present invention has been made in view of the above circumstances, and is safe, harmless, and does not contain organic solvents.
The purpose of the present invention is to provide a masking agent that allows easy masking. [Means for Solving the Problem] The masking agent according to the present invention contains 20 to 70% by weight of chlorinated paraffin, 20 to 60% by weight of microcrystalline wax, montan wax, ozokerite or ceresin, and 10 to 40% by weight of polyethylene wax. It is characterized by containing a mixture consisting of % by weight as a main component. [Examples] Hereinafter, the present invention will be specifically explained based on Examples showing formulation examples. Mixing example of masking agent for plating Chlorinated paraffin 20-50% by weight Microcrystalline wax 20-40% by weight Polyethylene wax 30-40% by weight Here, chlorinated paraffin imparts chemical resistance to the masking agent. The reason why the amount mentioned above is desirable is that if it is less than 20% by weight, the effect of imparting chemical resistance will be small, while if it exceeds 50% by weight, it will be difficult to remove the masking agent after surface treatment. It is. Microcrystalline waxes with a melting point of 60° to 96°C are used, and the reason why the above blending amount is desired is that if the amount is less than 20% by weight, the softening point of the masking agent will decrease and the material to be masked will This is because the masking agent is peeled off during the pretreatment stage, and if it exceeds 40% by weight, it becomes difficult to peel it off after the surface treatment. Polyethylene wax is used to add viscosity to the masking agent, and if it is less than 30% by weight, the coating film will be too thin, while if it exceeds 40% by weight, it will be too thick and uneconomical. This is because peeling in post-treatment becomes difficult. Example of formulation of masking agent for etching Chlorinated paraffin 50-70% by weight Microcrystalline wax 20-30% by weight Polyethylene wax 10-20% by weight Here, the purpose of blending chlorinated paraffin, microcrystalline wax and polyethylene wax is as follows: is the same as above. Etching liquid is highly corrosive. For this reason, the masking agent is also required to have high chemical resistance, so it is desirable to increase the amount of chlorinated paraffin blended, as shown in the above formulation example. Example of blending of masking agent for electrolytic polishing Chlorinated paraffin 20-30% by weight Microcrystalline wax 50-60% by weight Polyethylene wax 20-30% by weight Here, the blending of chlorinated paraffin, microcrystalline wax, and polyethylene wax The purpose is the same as above. Since the masking agent for electrolytic polishing requires electrical insulation in the masking part, it is desirable to increase the amount of microcrystalline, which has a high breakdown voltage (60 to 80 KV), as shown in the above formulation example. The above formulation examples are standard formulation examples, and it goes without saying that the present invention is not limited to masking agents having the above formulation ratios. Note that mineral waxes such as montan wax, ozokerite, and ceresin may be used in place of the microcrystalline wax. In addition, other ingredients such as fillers may be included as long as they do not interfere with the effectiveness of the wax as a masking agent. Table 1 shows the masking agents according to the present invention (hereinafter referred to as
Thickness S of the coating film at immersion time T (minutes) when masking is performed using the product of the present invention)
(mm)

【表】 第１図は、この場合の浸漬時間Ｔと被覆膜の厚
みＳとの関係を、横軸に浸漬時間Ｔ（分）を、縦
軸に厚みＳ（mm）をとつて示したものである。 なお、テストピースとして、幅20mm、長さ100
mm、厚さ５mmの純アルミ板を用い、マスキングを
110℃で行つた。 図にみるように、浸漬後経時的に厚みＳが減少
している。 これは、溶融状態のワツクス中に低温の被マス
キング材を浸漬すると、該被マスキング材の表面
に近在するワツクスが瞬時に硬化して表面に付着
するが、周囲の溶融状態のワツクスからの熱によ
り経時的に再溶融していくためである。 従つて、一回の浸漬で浸漬時間Ｔを変えること
で、厚みＳを制御することができる。 第２表は、本発明品を用いてマスキングを行う
場合に要する時間を従来品のそれと比較して示し
たものである。 ここで、本発明品の組成は、塩素化パラフイン
ワツクス50部、マイクロクリスタリンワツクス30
部、ポリエチレンワツクス20部であり、一方、従
来品は、ネオプレンゴムを主成分とし、有機溶剤
としてトルエンが用いられているマスキング剤で
ある。[Table] Figure 1 shows the relationship between the immersion time T and the thickness S of the coating film in this case, with the immersion time T (minutes) on the horizontal axis and the thickness S (mm) on the vertical axis. It is something. In addition, as a test piece, the width is 20 mm and the length is 100 mm.
Masking is done using a pure aluminum plate with a thickness of 5 mm and a thickness of 5 mm.
It was carried out at 110℃. As shown in the figure, the thickness S decreases over time after immersion. This is because when a low-temperature masking material is immersed in molten wax, the wax near the surface of the masking material instantly hardens and adheres to the surface, but the heat from the surrounding molten wax This is because it remelts over time. Therefore, by changing the immersion time T during one immersion, the thickness S can be controlled. Table 2 shows the time required for masking using the product of the present invention in comparison with that of the conventional product. Here, the composition of the product of the present invention is 50 parts of chlorinated paraffin wax and 30 parts of microcrystalline wax.
On the other hand, the conventional product is a masking agent whose main component is neoprene rubber and toluene is used as an organic solvent.

【表】 第２表より明らかなように、本発明品によれば
従来品に比べ、マスキング時間が1/27程度に短縮
された。 第３表は、前記本発明品についての各種薬品に
対する耐薬品性試験の条件および結果を示したも
のである。[Table] As is clear from Table 2, according to the product of the present invention, the masking time was shortened to about 1/27 compared to the conventional product. Table 3 shows the conditions and results of chemical resistance tests for the products of the present invention against various chemicals.

〔発明の効果〕〔Effect of the invention〕

本発明品にあつては、塩素化パラフイン20〜70
重量％と、マイクロクリスタリンワツクス，モン
タンワツクス，オゾケライト又はセレシン10〜60
重量％と、ポリエチレンワツクス10〜40重量％と
の混合物を主成分として含むから、被膜が緻密で
耐酸性，耐アルカリ性のいずれにも優れ、メツキ
処理等において酸性薬品の外に前処理としてアル
カリ性薬品を使用することの多い作業においてそ
の効果が極めて大きく、また有機溶剤を含まない
ので、安全、無害であつて、しかも、マスキング
の作業時間が短くてすみ、浸漬時間を変えること
により所望の厚みの被覆膜を形成させることがで
きるため、マスキング工程における作業性を向上
させる。 In the case of the product of the present invention, chlorinated paraffin 20 to 70
Weight% and microcrystalline wax, montan wax, ozokerite or ceresin 10-60
% by weight and 10 to 40% by weight of polyethylene wax, the film is dense and has excellent acid and alkali resistance, and can be used with alkaline pretreatment in addition to acidic chemicals in plating, etc. It is very effective in work that often uses chemicals, and since it does not contain organic solvents, it is safe and harmless.Moreover, the masking time can be shortened, and the desired thickness can be achieved by changing the immersion time. Since the coating film can be formed, the workability in the masking process is improved.

【図面の簡単な説明】[Brief explanation of drawings]

第１図は本発明品の浸漬時間と被覆膜の厚みと
の関係を示すグラフである。 FIG. 1 is a graph showing the relationship between the immersion time and the thickness of the coating film for the product of the present invention.

Claims (1)

【特許請求の範囲】[Claims] １ 塩素化パラフイン20〜70重量％、マイクロク
リスタリンワツクス，モンタンワツクス，オゾケ
ライト又はセレシン20〜60重量％、ポリエチレン
ワツクス10〜40重量％からなる混合物を主成分と
して含むことを特徴とするマスキング剤。1. A masking characterized by containing as a main component a mixture consisting of 20-70% by weight of chlorinated paraffin, 20-60% by weight of microcrystalline wax, montan wax, ozokerite or ceresin, and 10-40% by weight of polyethylene wax. agent.
JP63006542A 1988-01-14 1988-01-14 Masking agent Granted JPH01184282A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63006542A JPH01184282A (en) 1988-01-14 1988-01-14 Masking agent

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63006542A JPH01184282A (en) 1988-01-14 1988-01-14 Masking agent

Publications (2)

Publication Number Publication Date
JPH01184282A JPH01184282A (en) 1989-07-21
JPH0427298B2 true JPH0427298B2 (en) 1992-05-11

Family

ID=11641229

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63006542A Granted JPH01184282A (en) 1988-01-14 1988-01-14 Masking agent

Country Status (1)

Country Link
JP (1) JPH01184282A (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB0021672D0 (en) * 2000-09-04 2000-10-18 Aerolatte Ltd Steam free milk frother
US6872320B2 (en) * 2001-04-19 2005-03-29 Xerox Corporation Method for printing etch masks using phase-change materials
JP5472950B2 (en) * 2012-06-19 2014-04-16 Ｊｅインターナショナル株式会社 Masking agent and method for producing surface-treated substrate
US9057272B2 (en) 2012-06-29 2015-06-16 United Technologies Corporation Protective polishing mask
JP5986008B2 (en) * 2013-02-08 2016-09-06 日本電信電話株式会社 Method for manufacturing conductive fabric and method for manufacturing biological signal measuring apparatus

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4918277A (en) * 1972-06-09 1974-02-18
JPS52106336A (en) * 1976-03-05 1977-09-06 Hitachi Ltd Surface treating method
DE3414383C2 (en) * 1984-04-16 1986-09-04 MTU Motoren- und Turbinen-Union München GmbH, 8000 München Process for the chemical removal of aluminum diffusion layers

Also Published As

Publication number Publication date
JPH01184282A (en) 1989-07-21

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