JPH04276076A - Chemical vapor growth method - Google Patents

Abstract

PURPOSE:To easily synthesize a metal film by using the org. acid salt of the metal as the raw material and adding a gaseous reactant to the gaseous raw material. CONSTITUTION:The org. acid salt of a metal is used as the raw material, and a gaseous reactant is added to the gaseous raw material to grow the metal film on the surface of a material to be treated. The metal acetate or its derivative is used as the salt, and hydrogen gas is used as the gaseous reactant. A carrier gas and the gaseous reactant are sent to a reactor 7 respectively from cylinders 1 and 2 and mixed to form a film on the material 9. Consequently, an excellent metal film is easily grown with less stages and without generating a corrosive gas.

Description

[Detailed description of the invention]

0001

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a chemical vapor deposition method, and more particularly to a method for manufacturing metal films.

0002

[Prior art] Chemical vapor deposition (Chemical V
The apor deposition (CVD) method has been widely put into practical use as a method for mass-producing high-performance films. Metal chlorides are widely used as raw materials for chemical vapor deposition of metal films.

0003

However, during thin film synthesis, hydrogen chloride gas, which is highly corrosive to reactor materials, is generated. The present invention has been made in view of the above-mentioned difficulties, and its purpose is to provide a new method for easily synthesizing metal films using inexpensive and easy-to-handle raw materials and without generating corrosive gases. Provides chemical vapor deposition method.

0004

[Means for Solving the Problems] An organic acid salt of a metal, such as a metal acetate or a derivative of a metal acetate, is used as a raw material, and a reactive gas, such as hydrogen, is added to the raw material gas. A chemical vapor deposition method characterized by growing a metal film on the surface of a treated object.

[0005]

[Operation] According to the method of the present invention, an excellent metal film can be easily grown using raw materials that are safe to handle, in a small number of steps, and without generating corrosive gases.

[Examples] Examples of the present invention will be described below. FIG. 1 shows a schematic diagram of the film forming apparatus. Cobalt acetate was used as a raw material and was vaporized in a vaporizer maintained at 300° C., and introduced into the reactor using nitrogen gas (flow rate 300 cm 3 /min) as a carrier gas. Hydrogen gas (flow rate: 300 cm 3 /min) was used as the reaction gas, and was mixed with the raw material gas in a coaxial jet by diffusion in a reactor to form a film under atmospheric pressure. Borosilicate glass and silicon single crystal were used as the substrate. When the reaction was carried out at a reaction temperature of 350 to 500°C, a crystalline cobalt film with metallic luster and high conductivity was obtained. FIG. 2 shows an example of the X-ray diffraction pattern of the synthesized thin film. FIG. 3 shows the thin film deposition rate versus reaction temperature. Figure 4 shows the resistivity of the synthesized film. 40
The resistivity of the film formed at 0° C. is 4×10 −4 Ω·cm, which is almost the same as the resistivity of the bulk material. Although the present invention has been variously explained above with reference to preferred embodiments, the present invention is not limited to these embodiments, and it goes without saying that many modifications can be made without departing from the spirit of the invention. It is.

[Brief explanation of the drawing]

FIG. 1 is a schematic diagram of the device.

FIG. 2 is a diagram showing an example of an X-ray diffraction pattern of a synthesized film.

FIG. 3 is a diagram showing the thin film deposition rate versus reaction temperature.

FIG. 4 is a diagram showing the resistivity of a synthesized thin film versus reaction temperature.

[Explanation of symbols]

1 Carrier gas cylinder 2 Reaction gas cylinder 3 Gas flow controller 4 Temperature detector 5. Vaporizer 6 Raw materials 7 Reactor 8 Heater 9. Object to be treated

Claims (3)

[Claims] 1. A chemical vapor deposition method characterized in that a metal organic acid salt is used as a raw material and a reactive gas is added to the raw material gas to grow a metal film on the surface of a workpiece. 2. The chemical vapor deposition method according to claim 1, wherein the metal organic acid salt is a metal acetate or a derivative of a metal acetate. 3. The chemical vapor deposition method according to claim 1, wherein the reaction gas is hydrogen.