JPH042786A - Method for plating surface of aluminum oxide-based precious stone with electrically conductive weak magnetic body - Google Patents
Method for plating surface of aluminum oxide-based precious stone with electrically conductive weak magnetic bodyInfo
- Publication number
- JPH042786A JPH042786A JP10286390A JP10286390A JPH042786A JP H042786 A JPH042786 A JP H042786A JP 10286390 A JP10286390 A JP 10286390A JP 10286390 A JP10286390 A JP 10286390A JP H042786 A JPH042786 A JP H042786A
- Authority
- JP
- Japan
- Prior art keywords
- plating
- precious stone
- thin film
- aluminum oxide
- conductive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000007747 plating Methods 0.000 title claims abstract description 32
- 239000010437 gem Substances 0.000 title claims abstract description 30
- 229910001751 gemstone Inorganic materials 0.000 title claims abstract description 24
- 238000000034 method Methods 0.000 title claims description 12
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 title claims description 9
- 229910052751 metal Inorganic materials 0.000 claims abstract description 14
- 239000002184 metal Substances 0.000 claims abstract description 14
- 239000010409 thin film Substances 0.000 claims abstract description 14
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 13
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 13
- 229910052720 vanadium Inorganic materials 0.000 claims abstract description 13
- 238000004544 sputter deposition Methods 0.000 claims abstract description 10
- 238000004381 surface treatment Methods 0.000 claims abstract description 7
- 238000007733 ion plating Methods 0.000 claims abstract description 6
- 238000007740 vapor deposition Methods 0.000 claims abstract description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 11
- 229910052737 gold Inorganic materials 0.000 claims description 11
- 239000010931 gold Substances 0.000 claims description 11
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 10
- 229910052802 copper Inorganic materials 0.000 claims description 10
- 239000010949 copper Substances 0.000 claims description 10
- 239000010936 titanium Substances 0.000 claims description 10
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 9
- 239000000696 magnetic material Substances 0.000 claims description 7
- 239000011248 coating agent Substances 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 6
- 150000002739 metals Chemical class 0.000 claims description 3
- 239000000853 adhesive Substances 0.000 abstract description 8
- 230000001070 adhesive effect Effects 0.000 abstract description 8
- 229910052594 sapphire Inorganic materials 0.000 abstract description 6
- 239000010980 sapphire Substances 0.000 abstract description 6
- 239000010979 ruby Substances 0.000 abstract description 2
- 229910001750 ruby Inorganic materials 0.000 abstract description 2
- 239000004575 stone Substances 0.000 abstract 2
- 210000000078 claw Anatomy 0.000 description 28
- 238000010894 electron beam technology Methods 0.000 description 6
- 235000012431 wafers Nutrition 0.000 description 6
- 238000001704 evaporation Methods 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- 238000000609 electron-beam lithography Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- DMFGNRRURHSENX-UHFFFAOYSA-N beryllium copper Chemical compound [Be].[Cu] DMFGNRRURHSENX-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 1
- 150000001879 copper Chemical class 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、サファイヤ、ルビー等のアルミ酸化物を主成
分とする貴石の表面に導電性が高く化学的に安定して弱
磁性体のメッキを行う方法に関するものである。[Detailed Description of the Invention] [Industrial Application Field] The present invention is a method of plating a highly conductive, chemically stable, and weakly magnetic material on the surface of precious stones, such as sapphire and ruby, whose main component is aluminum oxide. It is about how to do this.
電子ビームを用いてレティクルやウェファ−に所定のパ
ターンを描画する電子ビーム描画装置においては、レテ
ィクルやウェファ−を保持するカセット等の保持手段が
電荷を帯びたり磁化することによって電子ビームに作用
し、電子ビームを所定の軌跡から曲げることのないよう
に、必ず弱磁性体を用い、或いは非導電体はその表面に
導電性被膜をコーティングしてアースするなど細心の注
意が払われている。In an electron beam lithography system that uses an electron beam to draw a predetermined pattern on a reticle or wafer, holding means such as a cassette that holds the reticle or wafer acts on the electron beam by being charged or magnetized. In order to prevent the electron beam from deflecting from a predetermined trajectory, great care is taken to ensure that a weakly magnetic material is used, or for non-conducting materials to be grounded by coating the surface with a conductive film.
一方、レティクルやウェファ−をカセットに押圧して保
持する押え爪の先端部には、耐摩耗性の材料である貴石
、特にサファイヤが接着されている。そのため、非導電
体であるサファイヤからなる重石とベリリウム銅からな
る取付部材である押え爪本体とこれらを接着する接着剤
との表面には、連続して銅下地の金メッキを施してアー
スするようにな−っている。On the other hand, a precious stone, particularly sapphire, which is a wear-resistant material, is bonded to the tip of a presser claw that presses and holds the reticle or wafer against the cassette. Therefore, the surfaces of the weight made of sapphire, which is a non-conductor, the presser claw body, which is a mounting member made of beryllium copper, and the adhesive that adheres them, are grounded by continuously applying gold plating on a copper base. It's happening.
従来技術では、この銅下地の処理を蒸着、イオンプレー
ティング、スパッタリング等で行い、その上面に金メッ
キを施していた。しかし、この従来技術による銅下地の
金メッキでは貴石に対する密着力が充分でなく、しばし
ば使用中にIAHt、、てレティクルやウェファ−の表
面を汚染し、パターン不良の原因となっていた。In the prior art, this copper base was treated by vapor deposition, ion plating, sputtering, etc., and the top surface was plated with gold. However, this prior art gold plating on a copper base does not have sufficient adhesion to precious stones, and during use, IAHt often contaminates the surface of the reticle or wafer, causing pattern defects.
そして、貴石表面のメッキが剥離して貴石が露出すると
、貴石の露出部分が電荷を帯び、電子ビームがその電荷
によって所定の軌跡から曲げられるので描画精度を悪化
することになり、著しいときは加工中のレティクルやウ
ェファ−が不良品となることもあった。When the plating on the surface of a precious stone peels off and the precious stone is exposed, the exposed part of the precious stone becomes electrically charged, and the electron beam is bent from its predetermined trajectory due to the electrical charge, which deteriorates the drawing accuracy. Sometimes the reticles and wafers inside were defective.
本発明は、これらの問題の原因となっている銅下地の金
メッキの貴石に対する密着力を向上させて、貴石の表面
に設けられた導電性で弱磁性体のメッキの剥離を防止し
ようとするものである。The present invention aims to improve the adhesion of gold plating on a copper base to precious stones, which causes these problems, and prevent the peeling of the conductive and weakly magnetic plating provided on the surface of the precious stones. It is.
本発明は、この課題を解決するために、貴石及びその取
付部材の双方の表面に連続するように蒸着、イオンプレ
ーティング、スパッタリング等の表面処理によってチタ
ン、バナジウム、アルミニウムからなる金属のいずれか
の薄膜をコーティングする第1の工程と、第1の工程と
同一の処理手段によって前記チタン、バナジウム、アル
ミニウムからなる金属のいずれかの薄膜の上面に銅の薄
膜をコーティングする第2の工程と、前記銅の薄膜の上
面に化学的に安定して導電性が高い弱磁性体の金属をメ
ッキする第3の工程からなるアルミ酸化物を主成分とす
る貴石の表面に導電性で弱磁性体のメッキを行う方法を
採用し、特に、第3の工程を金メッキとしてメッキの化
学的な安定度を向上し、又は第1の工程と第2の工程と
を単一の処理手段によって連続して処理することによっ
て格別の工数の増加を要することなく容易に実施出来る
ようにしたものである。In order to solve this problem, the present invention is to apply metals made of titanium, vanadium, or aluminum by surface treatment such as vapor deposition, ion plating, and sputtering so that they are continuous on the surface of both the precious stone and its mounting member. a first step of coating a thin film; a second step of coating a thin film of copper on the upper surface of the thin film of any of the metals made of titanium, vanadium, or aluminum by the same treatment means as the first step; The third step consists of plating a chemically stable, highly conductive, weakly magnetic metal on the top surface of the thin copper film. Plating the conductive, weakly magnetic material on the surface of a precious stone whose main component is aluminum oxide. In particular, the third step is gold plating to improve the chemical stability of the plating, or the first step and the second step are processed continuously by a single processing means. This allows for easy implementation without requiring any particular increase in man-hours.
本発明は、第1の工程として、貴石及びその取付部材の
双方の表面に連続するように蒸着、イオンプレーティン
グ、スパッタリング等の表面処理によってチタン、バナ
ジウム、アルミニウムからなる金属のいずれかの薄膜を
コーティングすることによりて銅下地の金メッキの貴石
に対する密着力を向上させることが出来たので、貴石の
表面に設けられた導電性で弱磁性体のメッキの@離を防
止することが達成できたものである。In the present invention, as a first step, a thin film of a metal made of titanium, vanadium, or aluminum is continuously applied to the surface of both the precious stone and its mounting member by surface treatment such as vapor deposition, ion plating, or sputtering. By coating it, we were able to improve the adhesion of the gold plating on the copper base to the precious stone, which made it possible to prevent the conductive and weakly magnetic plating on the surface of the precious stone from separating. It is.
以下に、本発明を実施例に基づいて説明する。 The present invention will be explained below based on examples.
第1図は本発明のメッキ方法を採用するに適した押え爪
を有する電子ビーム描画装置のカセット1を示し、第2
図は第1図のA−A断面図である。FIG. 1 shows a cassette 1 of an electron beam lithography apparatus having a presser claw suitable for employing the plating method of the present invention.
The figure is a sectional view taken along the line AA in FIG. 1.
図において、カセット1は、カセット本体2に削設され
た深い凹部2a内にレティクル押え板3が配設され、こ
のレティクル押え板3に設けられたピン4とカセット本
体2に固定された押え爪5の重石7との間で、カセット
本体2に削設された浅い凹部2b内に想像線で示すよう
にレティクル8を挿入して挟持し、ビン4の下方のバネ
9で押圧固定するようになっている。In the figure, the cassette 1 has a reticle holding plate 3 disposed in a deep recess 2a cut into the cassette body 2, and a pin 4 provided on the reticle holding plate 3 and a holding claw fixed to the cassette body 2. 5, the reticle 8 is inserted into the shallow recess 2b cut into the cassette body 2 as shown by the imaginary line, and the reticle 8 is held between the weight 7 and the weight 7 of the bottle 4. It has become.
第3図は押え爪5単体の斜視図、第4図は同断面図、第
5図は同下面図である。3 is a perspective view of the presser claw 5 alone, FIG. 4 is a sectional view thereof, and FIG. 5 is a bottom view thereof.
押え爪5は、第3図乃至第5図に示すように、ベリリウ
ム銅等の導電体からなる押え爪零体6とサファイア等の
アルミ酸化物を主成分とする貴石からなる重石7とから
なり、重石7は押え爪本体6の先端部に接着して固定さ
れている。押え爪零体6には、基部にネジ穴6aが設け
てあり、第1図、第2図に示すように、ネジ6bでカセ
ット本体2に取付けられている。第5図の60は、カセ
ット本体2に取付ける際の取付座である。As shown in FIGS. 3 to 5, the presser claw 5 consists of a presser claw zero body 6 made of a conductor such as beryllium copper and a weight 7 made of a precious stone mainly composed of aluminum oxide such as sapphire. The weight 7 is adhesively fixed to the tip of the presser claw body 6. The presser claw zero body 6 has a screw hole 6a at its base, and is attached to the cassette body 2 with a screw 6b, as shown in FIGS. 1 and 2. Reference numeral 60 in FIG. 5 is a mounting seat for mounting on the cassette body 2.
この押え爪5を含むカセット1は、前述のように、電荷
を帯びたり磁化すると電子ビームに作用して電子ビーム
を所定の軌跡から曲げることが生じるので、導電性のあ
る弱磁性体でなければならない。As mentioned above, the cassette 1 including the presser claw 5 must be made of a weakly magnetic conductive material, since if it is charged or magnetized, it will act on the electron beam and bend the electron beam from a predetermined trajectory. It won't happen.
しかし、爪面7は、非常に硬度の高いレティクルやウェ
ファ−を繰り返し着脱しても摩耗が生じないために、天
然又はセラミックを焼成したサファイア等の貴石を使用
している。これら貴石は、弱磁性体ではあるが導電体で
はないので、その表面に電荷を帯びる欠点を有している
。このため、貴石の表面に導電性で弱磁性体のメッキを
施す必要が生じる。However, the claw surface 7 is made of a precious stone such as natural or fired ceramic sapphire because it will not wear out even if a very hard reticle or wafer is repeatedly attached and detached. Although these precious stones are weakly magnetic, they are not electrically conductive, so they have the disadvantage that their surfaces are charged. For this reason, it becomes necessary to plate the surface of the precious stone with a conductive and weakly magnetic material.
第6図は押え爪零体6の先端部に設けられた爪面7の接
着部分のみを拡大して示した拡大断面図であって、押え
爪零体6に接着剤10で爪面7が接着され、その表面に
は導電性で弱磁性体の金属からなるメッキが施されてい
る。FIG. 6 is an enlarged sectional view showing only the adhesive part of the claw surface 7 provided at the tip of the zero presser claw body 6, and the claw surface 7 is attached to the zero presser claw body 6 with adhesive 10. It is glued together, and its surface is plated with a conductive, weakly magnetic metal.
この導電性で弱磁性体の金属からなるメッキは、次の工
程で行われる。This plating made of conductive and weakly magnetic metal is performed in the next step.
+11 蒸着、イオンプレーティング、スパッタリン
グ等の表面処理によってチタン、バナジウム、アルミニ
ウムからなる金属のいずれかの薄膜層11をコーティン
グする。+11 Coat a thin film layer 11 of any metal made of titanium, vanadium, or aluminum by surface treatment such as vapor deposition, ion plating, or sputtering.
(2) 同一の処理装置内で、表面処理する蒸発源を
交換して、銅の薄膜層12を重ねてコーティングする。(2) Within the same processing apparatus, the evaporation source for surface treatment is replaced and the copper thin film layer 12 is coated in an overlapping manner.
これらの処理は、蒸発源を同一の処理装置内に複数個セ
ントしておき、順次蒸発させる多層蒸着法、同一の処理
装置内に複数個所のスパッタリング部を設け、これらの
間を順次転送してスパッタリングを行う連結スパッタリ
ング法として公知になっているので、詳細な説明は省略
する。These processes include a multilayer evaporation method in which multiple evaporation sources are installed in the same processing equipment and evaporated in sequence, and a multilayer evaporation method in which multiple sputtering sections are installed in the same processing equipment and the sputtering is sequentially transferred between them. Since this method is known as a connected sputtering method that performs sputtering, a detailed explanation will be omitted.
(3) その表面に金メッキ層13を施す、この金メ
ッキ層13は、爪面7の表面と接着剤1o及びそれに連
続する押え爪零体6の先端部にメンキされていれば充分
なので、この範囲のみに部分メッキを施す。(3) A gold plating layer 13 is applied to the surface of the gold plating layer 13. It is sufficient that the gold plating layer 13 is plated on the surface of the claw surface 7, the adhesive 1o, and the tip of the presser claw zero body 6 that is continuous therewith. Partial plating is applied to the chisel.
このように表面処理及びメッキを施すと、第6図に示す
ように、内側からチタン(又はバナジウム、アルミニウ
ム)、銅、金の3層からなる導電体の薄膜層が形成され
、押え爪零体6をアースすることによって爪面7もアー
スされて表面に電荷を帯電することが防止されると共に
、貴石に対するチタン(又はバナジウム、アルミニウム
)の密着強度は充分に大きいので、従来技術のように剥
離が生じることも防止される。When the surface treatment and plating are performed in this way, a thin conductive film layer consisting of three layers of titanium (or vanadium, aluminum), copper, and gold is formed from the inside, as shown in Figure 6, and the presser claw zero body is By grounding 6, the claw surface 7 is also grounded, preventing the surface from being charged with electricity, and since the adhesion strength of titanium (or vanadium, aluminum) to precious stones is sufficiently high, it is not possible to peel it off as in the conventional technology. It is also prevented from occurring.
本発明のアルミ酸化物を主成分とする貴石の表面に導電
性で弱磁性体のメッキを行う方法によれば、押え爪本体
のみをアースすることによって爪面も確実にアースされ
、爪面の表面に電荷を帯電することが防止されると共に
、貴石に対するチタン(又はバナジウム、アルミニウム
)の密着強度は充分に大きいので、従来技術のようにメ
ッキ層に剥離が生じて脱落することも防止される。According to the method of plating the surface of a precious stone mainly composed of aluminum oxide with a conductive and weakly magnetic substance according to the present invention, by grounding only the presser claw body, the claw surface is also reliably grounded, and the claw surface is grounded. In addition to preventing the surface from being electrically charged, the adhesion strength of titanium (or vanadium or aluminum) to the precious stone is sufficiently strong, so the plating layer is prevented from peeling and falling off as in conventional technology. .
第1図は本発明のメッキ方法を採用するに適した押え爪
を有する電子ビーム描画装置のカセットを示し、第2図
は第1図のA−A断面図、第3図は押え爪5単体の斜視
図、第4図は同断面図、第5図は同下面図、第6図は押
え爪本体の先端部に設けられた爪面の接着部分のみを拡
大して示した拡大断面図である。
1・・・カセット 2・・・カセット本体3・・・
レティクル押え板
5・・・押え爪 6・・・押え爪本体フ・・・爪
面 8・・・レティクル10・・・接着剤
11・・・チタン、バナジウム、アルミニウムからなる
金属のいずれかの薄膜層FIG. 1 shows a cassette of an electron beam lithography apparatus having a presser claw suitable for employing the plating method of the present invention, FIG. 2 is a sectional view taken along the line A-A in FIG. 1, and FIG. 4 is a sectional view of the same, FIG. 5 is a bottom view of the same, and FIG. 6 is an enlarged sectional view showing only the adhesive portion of the claw surface provided at the tip of the presser claw body. be. 1...Cassette 2...Cassette body 3...
Reticle press plate 5... Presser claw 6... Presser claw body... Claw surface 8... Reticle 10... Adhesive 11... Thin film of any metal made of titanium, vanadium, or aluminum layer
Claims (3)
で弱磁性体の金属からなるメッキを行う方法であって、
貴石及びその取付部材の双方の表面に連続するように蒸
着、イオンプレーティング、スパッタリング等の表面処
理によってチタン、バナジウム、アルミニウムからなる
金属のいずれかの薄膜をコーティングする第1の工程と
、第1の工程と同一の処理手段によって前記チタン、バ
ナジウム、アルミニウムからなる金属のいずれかの薄膜
の上面に銅の薄膜をコーティングする第2の工程と、前
記銅の薄膜の上面に化学的に安定して導電性が高く弱磁
性体の金属をメッキする第3の工程からなることを特徴
とするアルミ酸化物を主成分とする貴石の表面に導電性
で弱磁性体のメッキを行う方法。(1) A method of plating the surface of a precious stone mainly composed of aluminum oxide with a conductive and weakly magnetic metal,
a first step of continuously coating the surface of both the precious stone and its mounting member with a thin film of a metal made of titanium, vanadium, or aluminum by surface treatment such as vapor deposition, ion plating, or sputtering; a second step of coating a thin film of copper on the top surface of the thin film of any of the metals made of titanium, vanadium, or aluminum by the same treatment means as in the step; A method for plating a conductive and weakly magnetic material on the surface of a precious stone whose main component is aluminum oxide, the method comprising a third step of plating a highly conductive and weakly magnetic metal.
求項1記載のアルミ酸化物を主成分とする貴石の表面に
導電性で弱磁性体のメッキを行う方法。(2) A method for plating a conductive and weakly magnetic material on the surface of a precious stone whose main component is aluminum oxide according to claim 1, wherein the third step is gold plating.
って連続して処理されることを特徴とする請求項1記載
のアルミ酸化物を主成分とする貴石の表面に導電性で弱
磁性体のメッキを行う方法。(3) The surface of the precious stone containing aluminum oxide as a main component according to claim 1 is characterized in that the first step and the second step are processed continuously by a single processing means. A method of plating weakly magnetic materials.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10286390A JPH042786A (en) | 1990-04-20 | 1990-04-20 | Method for plating surface of aluminum oxide-based precious stone with electrically conductive weak magnetic body |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10286390A JPH042786A (en) | 1990-04-20 | 1990-04-20 | Method for plating surface of aluminum oxide-based precious stone with electrically conductive weak magnetic body |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH042786A true JPH042786A (en) | 1992-01-07 |
Family
ID=14338752
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10286390A Pending JPH042786A (en) | 1990-04-20 | 1990-04-20 | Method for plating surface of aluminum oxide-based precious stone with electrically conductive weak magnetic body |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH042786A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR19990068719A (en) * | 1999-06-14 | 1999-09-06 | 기승철 | Aaaaa |
| KR20000054423A (en) * | 2000-06-05 | 2000-09-05 | 기승철 | Manufacturing method for forming a gold or silver plated layer on the surface of jewelry of jade material |
-
1990
- 1990-04-20 JP JP10286390A patent/JPH042786A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR19990068719A (en) * | 1999-06-14 | 1999-09-06 | 기승철 | Aaaaa |
| KR20000054423A (en) * | 2000-06-05 | 2000-09-05 | 기승철 | Manufacturing method for forming a gold or silver plated layer on the surface of jewelry of jade material |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5114556A (en) | Deposition apparatus and method for enhancing step coverage and planarization on semiconductor wafers | |
| JP3631246B2 (en) | Formally precise thin film coating system | |
| JPH0585634B2 (en) | ||
| JPH08293539A (en) | Semiconductor manufacturing method and device | |
| JPS60100662A (en) | Manufacture of carbon-containing layer | |
| JPH042786A (en) | Method for plating surface of aluminum oxide-based precious stone with electrically conductive weak magnetic body | |
| JPS62211375A (en) | Sputtering device | |
| JPH0563063A (en) | Electrostatic chuck device | |
| JPH11168132A (en) | Electrostatic suction device | |
| US5028306A (en) | Process for forming a ceramic-metal adduct | |
| US4596719A (en) | Multilayer coating method and apparatus | |
| JPS63140078A (en) | Film formation by sputtering | |
| JPS5824143A (en) | Photomask | |
| US5914017A (en) | Apparatus for, and method of, removing hydrocarbons from the surface of a substrate | |
| JP4005412B2 (en) | Manufacturing method of semiconductor device | |
| JPH05291378A (en) | Substrate transfer member | |
| EP0121443A3 (en) | Apparatus for and method of continuously depositing a highly conductive, highly transmissive film | |
| JPH10298780A (en) | Formation of coating film on insulating material | |
| JPS59105322A (en) | Forming method of minute pattern | |
| JPH07105380B2 (en) | Plasma processing device | |
| Baird et al. | The effect of alkali ion migration on the adhesion of sputtered chromium metallizations to glass | |
| JP3037291B1 (en) | Container for semiconductor processing equipment | |
| JPS5928568A (en) | Dry plating method | |
| JPH11106918A5 (en) | ||
| JPH02271550A (en) | Fixation of wafer substrate |