JPH04280992A - Wafer plating device - Google Patents

Wafer plating device

Info

Publication number
JPH04280992A
JPH04280992A JP6941791A JP6941791A JPH04280992A JP H04280992 A JPH04280992 A JP H04280992A JP 6941791 A JP6941791 A JP 6941791A JP 6941791 A JP6941791 A JP 6941791A JP H04280992 A JPH04280992 A JP H04280992A
Authority
JP
Japan
Prior art keywords
wafer
plating
elastic member
cathode electrode
opening
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6941791A
Other languages
Japanese (ja)
Other versions
JP2798517B2 (en
Inventor
Hirobumi Ishida
博文 石田
Kazuhiro Taniguchi
和広 谷口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EEJA Ltd
Original Assignee
Electroplating Engineers of Japan Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Electroplating Engineers of Japan Ltd filed Critical Electroplating Engineers of Japan Ltd
Priority to JP3069417A priority Critical patent/JP2798517B2/en
Publication of JPH04280992A publication Critical patent/JPH04280992A/en
Application granted granted Critical
Publication of JP2798517B2 publication Critical patent/JP2798517B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To eliminate the disadvantage of the conventional plating device that the cathode and wafer are not sealed from a plating soln. CONSTITUTION:A wafer U is pressed on an elastic member 12 provided to an arrangement receiving part 11 formed at the opening 1p of a plating bath 1, hence the side face and back of the wafer are sealed from the plating soln., and a cathode 13 is sealed from the plating soln. by clamping the cathode between the electric member and the wafer.

Description

【発明の詳細な説明】[Detailed description of the invention]

【0001】0001

【産業上の利用分野】この発明は、半導体用のウエーハ
にメッキを施すためのウエーハ用メッキ装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wafer plating apparatus for plating semiconductor wafers.

【0002】0002

【従来の技術】従来のウエーハ用メッキ装置としては図
4に示すようなものが知られている。このウエーハ用メ
ッキ装置は、ロート状に絞られた下方の供給部1sから
供給されたメッキ液Lを上方の開口部1pからオーバー
フローさせるようにしたカップ状のメッキ槽1を備えて
おり、このメッキ槽1の開口部1pに載置したウエーハ
Uにメッキ液Lを接触させてメッキするようになってい
る。そして、ウエーハUの載置用として先端をピン状に
尖らせたカソード電極2を用いており、このカソード電
極2は、メッキ槽1内においてメッキ液Lと常に接触す
る状態で設けられている。尚、3はアノード電極で、メ
ッキ液Lはこのアノード電極3に形成された多数の通孔
3hを通って供給されるようになっている。
2. Description of the Related Art A conventional wafer plating apparatus as shown in FIG. 4 is known. This wafer plating apparatus is equipped with a cup-shaped plating bath 1 in which a plating solution L supplied from a funnel-shaped lower supply portion 1s overflows from an upper opening 1p. A wafer U placed in an opening 1p of a tank 1 is brought into contact with a plating solution L to be plated. A cathode electrode 2 having a pin-shape tip is used for placing the wafer U, and this cathode electrode 2 is provided in the plating bath 1 in a state in which it is always in contact with the plating solution L. Note that 3 is an anode electrode, and the plating solution L is supplied through a large number of through holes 3h formed in this anode electrode 3.

【0003】このウエーハ用メッキ装置は平板なウエー
ハに効率よくメッキできると言う点で優れているものの
、未だ不十分な点がいくつかある。すなわち、■.カソ
ード電極がメッキ液中にあるためにそこにメッキが析出
してしまう。 ■.ウエーハの側面や裏面にメッキ液が回り込んで不必
要なメッキがなされてしまう。 ■.カソード電極に対する接触性が不安定である。
Although this wafer plating apparatus is excellent in that it can efficiently plate flat wafers, it still has some shortcomings. In other words, ■. Since the cathode electrode is in the plating solution, plating is deposited there. ■. The plating solution leaks onto the side and back surfaces of the wafer, resulting in unnecessary plating. ■. Contact with the cathode electrode is unstable.

【0004】これらの点を改良するものとして提案され
た技術の一つに例えば実開平2‐38472号公報に開
示される技術がある。この技術は、導電性緩衝板を介在
させて板状陰極(カソード電極)上にウエーハを押圧固
定するようにしているもので、このような構造によりカ
ソード電極及びウエーハの側面や裏面をメッキ液からシ
ールできるようになり、上記の点が解決されている。し
かし、この構造は、板状陰極や導電性緩衝板を必要とし
、特に、導電性緩衝板が内部に導電性部材を組み合わせ
た複雑な構造を必要とするようになっているので、大き
なコストアップ要因を抱えている。
One of the techniques proposed to improve these points is, for example, the technique disclosed in Japanese Unexamined Utility Model Publication No. 2-38472. This technology uses a conductive buffer plate to press and fix the wafer onto a plate-shaped cathode (cathode electrode). This structure prevents the cathode electrode and the side and back surfaces of the wafer from being exposed to the plating solution. It is now possible to seal, which solves the above problem. However, this structure requires a plate-shaped cathode and a conductive buffer plate, and in particular, the conductive buffer plate requires a complex structure in which conductive members are combined inside, resulting in a significant cost increase. There are factors.

【0005】[0005]

【発明が解決しようとする課題】したがって、この発明
は、前記従来の装置が有する欠点をより簡単な構造で解
決することを目的としている。
SUMMARY OF THE INVENTION Therefore, it is an object of the present invention to solve the drawbacks of the conventional device with a simpler structure.

【0006】[0006]

【課題を解決するための手段及び作用】このような目的
を達成するために、この発明によるウエーハ用メッキ装
置は、メッキ槽の開口部に形成した配置受け部に弾性部
材を設け、この弾性部材にウエーハを押接させて配置す
るようにすると共に、弾性部材とウエーハとの間に薄く
形成したカソード電極の先端を挟持させている。
[Means and Effects for Solving the Problems] In order to achieve the above object, the wafer plating apparatus according to the present invention includes an elastic member provided in the arrangement receiving portion formed at the opening of the plating tank, and the elastic member The wafer is placed in pressure contact with the wafer, and the tip of a thin cathode electrode is sandwiched between the elastic member and the wafer.

【0007】このウエーハ用メッキ装置では、配置受け
部に配した弾性部材にウエーハを押接させて配置するこ
とにより、ウエーハの側面や裏面のメッキ液からのシー
ルをなすと共に、この弾性部材とウエーハとの間にカソ
ード電極の先端を挟持させることにより、カソード電極
のメッキ液に対するシール及びカソード電極のウエーハ
への接触安定性を実現している。つまり、このウエーハ
用メッキ装置は、従来装置の欠点を改良するについて、
部材的には単純な構造の弾性部材が付加されただけであ
り、部材の組合せについても複雑な構造を全く必要とし
ない極めて簡単な構造で済んでいる。
[0007] In this wafer plating apparatus, by placing the wafer in pressure contact with the elastic member disposed in the placement receiving part, a seal is created from the plating liquid on the side and back surfaces of the wafer, and the elastic member and the wafer are placed in contact with each other. By sandwiching the tip of the cathode electrode between the two electrodes, sealing of the cathode electrode against the plating solution and stable contact between the cathode electrode and the wafer are realized. In other words, this wafer plating equipment improves the shortcomings of conventional equipment.
As for the members, only an elastic member with a simple structure is added, and the combination of members is an extremely simple structure that does not require any complicated structure.

【0008】このようなウエーハ用メッキ装置について
は、弾性部材をウエーハの全周に対応する状態、つまり
ウエーハの全周をシールする状態で設けることも可能で
あり、またさらに、ウエーハの周囲にメッキの必要な部
分がある場合には、弾性部材をメッキの必要でない部分
について部分的に複数箇所設けるようにすることもでき
る。
[0008] In such a wafer plating apparatus, it is possible to provide an elastic member to cover the entire circumference of the wafer, that is, to seal the entire circumference of the wafer. If there are parts that require plating, the elastic members can be provided at a plurality of locations on parts that do not require plating.

【0009】さらに、配置受け部をメッキ槽の開口部に
着脱自在とするようにすれば、ウエーハのサイズ変更の
場合にメッキ槽を変えなくとも配置受け部の取り換えだ
けで対応でき、装置の汎用性を上げることができる。
Furthermore, if the arrangement receiving part is made detachable from the opening of the plating tank, changing the size of the wafer can be done by simply replacing the arrangement receiving part without changing the plating tank, making the equipment more versatile. You can improve your sexuality.

【0010】0010

【実施例】以下、この発明の実施例を説明する。尚、以
下の説明では前述の従来例と共通する部分には同一の符
号を用い、その説明は適宜省略するものとする。このウ
エーハ用メッキ装置10は、メッキ槽1の開口部1pに
配置受け部11が庇状に内側に出っ張らせて形成されて
いる。この配置受け部11はメッキ槽1の開口部1pに
着脱自在とされているもので、この配置受け部11を、
ウエーハUのサイズに応じて、その内側への出っ張りサ
イズが異なるものと交換するだけでウエーハUのサイズ
変更に対応できるようになっている。また、この配置受
け部11には弾性部材12が設けられている。そして、
ウエーハUは、この弾性部材12に図示せぬ押接部材で
押接させられた状態で載置され、図3に示すような状態
でその全周を所定の幅でメッキ液Lに対しシールされる
状態にされている。
[Embodiments] Examples of the present invention will be described below. In the following description, the same reference numerals will be used for parts common to those of the conventional example described above, and the description thereof will be omitted as appropriate. This wafer plating apparatus 10 is formed such that a placement receiving part 11 protrudes inward like an eave at an opening 1p of a plating tank 1. This placement receiving portion 11 is removably attached to the opening 1p of the plating bath 1, and the placement receiving portion 11 is
Depending on the size of the wafer U, the size of the wafer U can be changed by simply replacing it with one that has a different size of inward protrusion. Further, an elastic member 12 is provided in this placement receiving portion 11 . and,
The wafer U is placed in a state in which it is pressed against the elastic member 12 by a pressing member (not shown), and its entire circumference is sealed against the plating solution L by a predetermined width as shown in FIG. It is in a state where

【0011】また、ウエーハUと弾性部材12との間に
カソード電極13の先端が挟持されている。このカソー
ド電極13の先端は、細線の束を解いて平たくして形成
されており、弾性部材12の弾性により弾性部材12に
めり込む状態となり、メッキ液Lに対し完全にシールさ
れ(図2)、しかもカソード電極13のウエーハUへの
接触が確実に且つ安定的になされる状態となっている。 この例では、図3に示すように、カソード電極13を3
本設けているが、この本数は電流容量との関係で適宜に
選択されることになる。ただ、複数のカソード電極13
は対称にして設けるのが均一なメッキ形成にとって好ま
しい。
Further, the tip of the cathode electrode 13 is held between the wafer U and the elastic member 12. The tip of this cathode electrode 13 is formed by unraveling a bundle of thin wires and flattening it, and it sinks into the elastic member 12 due to the elasticity of the elastic member 12, and is completely sealed against the plating solution L (FIG. 2). Moreover, the cathode electrode 13 is brought into contact with the wafer U reliably and stably. In this example, as shown in FIG.
Although this number is provided, the number will be appropriately selected in relation to the current capacity. However, multiple cathode electrodes 13
It is preferable to provide them symmetrically for uniform plating formation.

【0012】さらに、アノード電極14についても工夫
が施されている。すなわち、メッキ槽1内を循環するメ
ッキ液Lの流れについて中央部分を周辺部分に較べ強い
流れにすることにより循環流の淀みをなくすために、周
辺から中央にゆくにしたがって通孔14hの径が大きく
なるようにしている。
Further, the anode electrode 14 has also been devised. That is, in order to eliminate stagnation of the circulating flow by making the flow of the plating solution L circulating in the plating tank 1 stronger in the central part than in the peripheral part, the diameter of the through hole 14h is increased from the periphery to the center. I'm trying to get bigger.

【0013】尚、以上の実施例では、弾性部材12がウ
エーハUの全周をシールする構造になっていたが、ウエ
ーハUの周囲にメッキの必要な部分がある場合について
は、「弾性部材」をいわば細切れにして設け、この細切
れの「弾性部材」をメッキの必要でない部分に対応させ
て設けることになる。
In the above embodiment, the elastic member 12 has a structure that seals the entire circumference of the wafer U, but if there is a part around the wafer U that requires plating, the "elastic member 12" This means that the "elastic member" is provided in pieces, so to speak, and these pieces of "elastic member" are provided corresponding to areas that do not require plating.

【0014】[0014]

【発明の効果】この発明によるウエーハ用メッキ装置は
、以上説明してきたように、配置受け部に設けた弾性部
材にウエーハを押接させて配置することにより、ウエー
ハの側面や裏面のメッキ液からのシールをなすと共に、
この弾性部材とウエーハとの間にカソード電極の先端を
挟持させることにより、カソード電極のメッキ液に対す
るシール及びカソード電極のウエーハへの接触安定性を
実現しているので、部材的には単純な構造の弾性部材を
付加するだけであり、部材の組合せについても複雑な構
造を全く必要としない極めて簡単な構造で従来の装置が
有する欠点を解消できる。また、配置受け部がメッキ槽
に着脱自在とされているので、ウエーハのサイズ変更の
場合にメッキ槽を変えなくとも配置受け部の取り換えだ
けで対応でき、装置の汎用性を上げることができる。
Effects of the Invention As explained above, the wafer plating apparatus according to the present invention prevents the plating liquid from forming on the side or back surface of the wafer by placing the wafer in pressure contact with the elastic member provided in the placement receiving part. Along with forming a seal,
By sandwiching the tip of the cathode electrode between this elastic member and the wafer, sealing of the cathode electrode against the plating solution and stable contact between the cathode electrode and the wafer are realized, so the structure is simple in terms of components. The disadvantages of conventional devices can be overcome with an extremely simple structure that requires only the addition of an elastic member and does not require any complicated structure for combining the members. In addition, since the arrangement receiver is detachable from the plating tank, changing the size of the wafer can be done by simply replacing the arrangement receiver without changing the plating tank, increasing the versatility of the apparatus.

【0015】[0015]

【図面の簡単な説明】[Brief explanation of the drawing]

【図1】この発明によるウエーハ用メッキ装置の要部側
面図である。
FIG. 1 is a side view of essential parts of a wafer plating apparatus according to the present invention.

【図2】弾性部材とウエーハとの間に挟持されたカソー
ド電極を示す部分断面図である。
FIG. 2 is a partial cross-sectional view showing a cathode electrode held between an elastic member and a wafer.

【図3】弾性部材によるウエーハのシール状態を示す平
面図である。
FIG. 3 is a plan view showing a state in which a wafer is sealed by an elastic member.

【図4】従来のウエーハ用メッキ装置の要部側面図であ
る。
FIG. 4 is a side view of a main part of a conventional wafer plating apparatus.

【符号の説明】[Explanation of symbols]

1……メッキ槽 1p……開口部 10……ウエーハ用メッキ装置 11……配置受け部 12……弾性部材 13……カソード電極 U……ウエーハ 1...Plating tank 1p...opening 10...Wafer plating equipment 11... Placement receiving part 12...Elastic member 13...Cathode electrode U...Wafer

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】  メッキ槽の開口部に配置したウエーハ
に、流動状態のメッキ液を接触させてメッキするように
したウエーハ用メッキ装置において、メッキ槽の開口部
に形成した配置受け部に弾性部材を設け、この弾性部材
にウエーハを押接させて配置するようにすると共に、弾
性部材とウエーハとの間に薄く形成したカソード電極の
先端を挟持させたことを特徴とするウエーハのメッキ装
置。
Claim 1: A wafer plating apparatus that plating a wafer placed in an opening of a plating tank by bringing a plating solution in a flowing state into contact with the wafer, wherein an elastic member is attached to a placement receiving part formed in the opening of the plating tank. A wafer plating apparatus characterized in that the wafer is placed in pressure contact with the elastic member, and the tip of a thinly formed cathode electrode is sandwiched between the elastic member and the wafer.
【請求項2】  弾性部材がウエーハの全周に対応する
状態で設けられている請求項1のウエーハ用メッキ装置
2. The wafer plating apparatus according to claim 1, wherein the elastic member is provided so as to correspond to the entire circumference of the wafer.
【請求項3】  弾性部材が部分的に複数箇所設けられ
ている請求項1のウエーハ用メッキ装置。
3. The wafer plating apparatus according to claim 1, wherein a plurality of elastic members are partially provided.
【請求項4】  配置受け部がメッキ槽の開口部に着脱
自在とされた請求項1〜請求項3のウエーハ用メッキ装
置。
4. The wafer plating apparatus according to claim 1, wherein the arrangement receiving part is detachably attached to the opening of the plating tank.
JP3069417A 1991-03-11 1991-03-11 Wafer plating equipment Expired - Lifetime JP2798517B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3069417A JP2798517B2 (en) 1991-03-11 1991-03-11 Wafer plating equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3069417A JP2798517B2 (en) 1991-03-11 1991-03-11 Wafer plating equipment

Publications (2)

Publication Number Publication Date
JPH04280992A true JPH04280992A (en) 1992-10-06
JP2798517B2 JP2798517B2 (en) 1998-09-17

Family

ID=13402015

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3069417A Expired - Lifetime JP2798517B2 (en) 1991-03-11 1991-03-11 Wafer plating equipment

Country Status (1)

Country Link
JP (1) JP2798517B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1061159A4 (en) * 1998-12-21 2004-11-10 Tokyo Electron Ltd PLATING METHOD, APPARATUS AND SYSTEM THEREFOR
JP2014051696A (en) * 2012-09-05 2014-03-20 Mitomo Semicon Engineering Kk Cup type plating apparatus, cup type plating apparatus kit and plating method using the same
JP2014051697A (en) * 2012-09-05 2014-03-20 Mitomo Semicon Engineering Kk Cup type plating apparatus and plating method using the same

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3200468B2 (en) 1992-05-21 2001-08-20 日本エレクトロプレイテイング・エンジニヤース株式会社 Wafer plating equipment

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58181898A (en) * 1982-04-14 1983-10-24 Fujitsu Ltd Current supply apparatus used in plating
JPH0238472U (en) * 1988-08-30 1990-03-14

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58181898A (en) * 1982-04-14 1983-10-24 Fujitsu Ltd Current supply apparatus used in plating
JPH0238472U (en) * 1988-08-30 1990-03-14

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1061159A4 (en) * 1998-12-21 2004-11-10 Tokyo Electron Ltd PLATING METHOD, APPARATUS AND SYSTEM THEREFOR
JP2014051696A (en) * 2012-09-05 2014-03-20 Mitomo Semicon Engineering Kk Cup type plating apparatus, cup type plating apparatus kit and plating method using the same
JP2014051697A (en) * 2012-09-05 2014-03-20 Mitomo Semicon Engineering Kk Cup type plating apparatus and plating method using the same

Also Published As

Publication number Publication date
JP2798517B2 (en) 1998-09-17

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