JPH04286111A - Manufacture of polycrystal silicon thin film - Google Patents
Manufacture of polycrystal silicon thin filmInfo
- Publication number
- JPH04286111A JPH04286111A JP7369491A JP7369491A JPH04286111A JP H04286111 A JPH04286111 A JP H04286111A JP 7369491 A JP7369491 A JP 7369491A JP 7369491 A JP7369491 A JP 7369491A JP H04286111 A JPH04286111 A JP H04286111A
- Authority
- JP
- Japan
- Prior art keywords
- film
- silicon
- thin film
- amorphous silicon
- deposited
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 7
- 239000010409 thin film Substances 0.000 title claims description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title abstract description 12
- 229910052710 silicon Inorganic materials 0.000 title abstract description 12
- 239000010703 silicon Substances 0.000 title abstract description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 33
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 22
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 17
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 17
- 229910052681 coesite Inorganic materials 0.000 claims abstract description 16
- 229910052906 cristobalite Inorganic materials 0.000 claims abstract description 16
- 229910052682 stishovite Inorganic materials 0.000 claims abstract description 16
- 229910052905 tridymite Inorganic materials 0.000 claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 239000010408 film Substances 0.000 claims description 23
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 11
- 238000010438 heat treatment Methods 0.000 claims description 7
- 239000013078 crystal Substances 0.000 abstract description 28
- 239000002245 particle Substances 0.000 abstract 1
- 238000000151 deposition Methods 0.000 description 4
- 238000002425 crystallisation Methods 0.000 description 3
- 230000008025 crystallization Effects 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000010899 nucleation Methods 0.000 description 2
- 230000006911 nucleation Effects 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 238000001947 vapour-phase growth Methods 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910021486 amorphous silicon dioxide Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
Landscapes
- Thin Film Transistor (AREA)
- Recrystallisation Techniques (AREA)
Abstract
Description
【０００１】0001
【産業上の利用分野】本発明は大きな結晶粒径を有する
多結晶シリコン薄膜の製造方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for producing polycrystalline silicon thin films having large grain sizes.
【０００２】0002
【従来の技術】これまで多結晶シリコン薄膜は非晶質薄
膜たとえばＳｉＯ２膜上に気相成長法や、分子線成長法
により直接多結晶シリコンを堆積することや、堆積した
非晶質シリコン膜を熱処理により多結晶化することによ
って製造されてきた。多結晶シリコン薄膜は薄膜トラン
ジスタ等に応用されており、その電気的移動度は多結晶
シリコンの結晶粒径が大きくなるに従い高くなる。した
がって薄膜トランジスタの高移動度化を計るために大き
な結晶粒径を有する多結晶シリコン薄膜を成長すること
が必要であった。多結晶シリコン膜の結晶粒の大きさは
成長初期の結晶核の大きさに依存している。しかしなが
ら、従来の成長方法では成長初期に非晶質膜上に小さな
結晶核がランダムにできるために、結晶核の大きさを制
御することは困難であった。そこで、いくつかの初期結
晶核の大きさを大きくする試みがなされた。たとえば気
相成長においてＳｉＯ２上におけるシリコンとシリコン
−ゲルマニウム結晶との核形成の違いを利用して、成長
初期にゲルマニウムを添加し、シリコン−ゲルマニウム
による大きな結晶核を形成する方法である。その他の方
法はイオン注入を利用する方法である。非晶質シリコン
にイオン注入を行うと、条件により非晶質シリコンの結
晶化を促進することができる。[Prior Art] Until now, polycrystalline silicon thin films have been produced by directly depositing polycrystalline silicon on an amorphous thin film, such as a SiO2 film, by vapor phase growth or molecular beam growth, or by directly depositing polycrystalline silicon on an amorphous thin film, such as a SiO2 film. It has been manufactured by polycrystalizing it through heat treatment. Polycrystalline silicon thin films are applied to thin film transistors and the like, and their electrical mobility increases as the crystal grain size of polycrystalline silicon increases. Therefore, in order to increase the mobility of thin film transistors, it has been necessary to grow polycrystalline silicon thin films having large crystal grain sizes. The size of crystal grains in a polycrystalline silicon film depends on the size of crystal nuclei at the initial stage of growth. However, in the conventional growth method, small crystal nuclei are formed randomly on the amorphous film in the early stage of growth, making it difficult to control the size of the crystal nuclei. Therefore, attempts were made to increase the size of some initial crystal nuclei. For example, in vapor phase growth, by utilizing the difference in nucleation between silicon and silicon-germanium crystals on SiO2, germanium is added at the initial stage of growth to form large crystal nuclei of silicon-germanium. Another method uses ion implantation. When ions are implanted into amorphous silicon, crystallization of the amorphous silicon can be promoted depending on the conditions.
【０００３】したがってマスクを用い、局所的に非晶質
シリコン中へ一定間隔でイオン注入し、その後熱処理す
ることにより大きな結晶核を作ることができる。[0003] Therefore, large crystal nuclei can be created by locally implanting ions into amorphous silicon at regular intervals using a mask, followed by heat treatment.
【０００４】0004
【発明が解決しようとする課題】しかしながら、このよ
うな成長方法はゲルマニウムの添加とか、イオン注入の
ような煩雑な手法を導入しなければならない。[Problems to be Solved by the Invention] However, such a growth method requires the introduction of complicated techniques such as addition of germanium and ion implantation.
【０００５】本発明の目的はこのような煩雑な方法によ
らずに、結晶核形成の初期過程を制御し、大きな結晶粒
径を有する多結晶シリコン薄膜の製造方法を提供するこ
とにある。An object of the present invention is to provide a method of manufacturing a polycrystalline silicon thin film having a large crystal grain size by controlling the initial process of crystal nucleation without using such a complicated method.
【０００６】[0006]
【課題を解決するための手段】本発明は、多結晶シリコ
ン薄膜の製造方法において、まず、非晶質基板上に高真
空中で堆積した非晶質シリコン薄膜を熱処理により結晶
化し、その上に非晶質シリコンを堆積し、次に非晶質シ
リコン表面にＳｉＯ２膜を付着後、熱処理を行い、非晶
質シリコンを結晶化することを特徴とする。[Means for Solving the Problems] The present invention provides a method for producing a polycrystalline silicon thin film, in which first, an amorphous silicon thin film deposited on an amorphous substrate in a high vacuum is crystallized by heat treatment, and then The method is characterized by depositing amorphous silicon, then adhering a SiO2 film to the surface of the amorphous silicon, and then performing heat treatment to crystallize the amorphous silicon.
【０００７】[0007]
【作用】特願平２−２４９１５４号明細書によれば、高
真空中でＳｉＯ２上に堆積した清浄な表面を有する非晶
質シリコンの熱処理による結晶化は、従来の非晶質シリ
コン／ＳｉＯ２の界面より起こる場合と異なり、表面よ
り起こり、数１００オングストロームの径の結晶粒が形
成される。一方、この表面からの結晶化は非晶質シリコ
ン表面を薄いＳｉＯ２膜で覆うと完全に抑制される。[Operation] According to the specification of Japanese Patent Application No. 2-249154, crystallization by heat treatment of amorphous silicon with a clean surface deposited on SiO2 in a high vacuum can be performed using conventional amorphous silicon/SiO2. Unlike when it occurs from an interface, it occurs from the surface, and crystal grains with a diameter of several hundred angstroms are formed. On the other hand, crystallization from this surface is completely suppressed when the amorphous silicon surface is covered with a thin SiO2 film.
【０００８】従って、この作用によれば、ＳｉＯ２上に
堆積した薄い非晶質シリコン膜を熱処理することによっ
てＳｉＯ２上に大きな結晶粒を成長することができる。
この結晶粒を種としてその上に堆積した非晶質シリコン
の結晶化を計れば、従来の成長方法に比して簡便な方法
で結晶核の大きさを制御することができ、大きな結晶粒
を有する多結晶シリコン膜を形成することができる。Therefore, according to this effect, large crystal grains can be grown on SiO2 by heat treating a thin amorphous silicon film deposited on SiO2. By using these crystal grains as seeds to crystallize the amorphous silicon deposited on top of them, it is possible to control the size of the crystal nuclei in a simpler way than with conventional growth methods, and to avoid large crystal grains. A polycrystalline silicon film having a polycrystalline silicon film can be formed.
【０００９】[0009]
【実施例】次に本発明の実施例について、図面を参照し
て詳細に説明する。Embodiments Next, embodiments of the present invention will be described in detail with reference to the drawings.
【００１０】本実施例においては、ＳｉＯ２膜が成長可
能なシリコン分子線成長装置を用いて成長した例につい
て説明する。In this embodiment, an example will be described in which a SiO2 film is grown using a silicon molecular beam growth apparatus.
【００１１】図１は本実施例によって得られた多結晶シ
リコン膜の概略断面図を示したものである。FIG. 1 shows a schematic cross-sectional view of a polycrystalline silicon film obtained in this example.
【００１２】まずシリコン基板１に室温において酸素と
シリコンの分子線を照射し、膜厚１μｍのＳｉＯ２膜２
を成長する。次にＳｉＯ２膜上に非晶質シリコンを室温
で２００オングストローム堆積後、基板温度を６５０℃
に昇温し、１０分間保ち、結晶核３を形成した。次に基
板温度を室温にもどし、非晶質シリコンを２μｍ堆積し
、さらに非晶質シリコン表面に酸素とシリコンの分子線
を用いＳｉＯ２膜５を５０オングストローム付着した。
次に基板温度を６５０℃にし非晶質シリコン膜を多結晶
化し、多結晶シリコン膜４を形成した。First, a silicon substrate 1 is irradiated with molecular beams of oxygen and silicon at room temperature to form an SiO2 film 2 with a thickness of 1 μm.
grow. Next, after depositing 200 angstroms of amorphous silicon on the SiO2 film at room temperature, the substrate temperature was raised to 650°C.
The temperature was raised to 1, and maintained for 10 minutes to form crystal nuclei 3. Next, the substrate temperature was returned to room temperature, amorphous silicon was deposited to a thickness of 2 μm, and a SiO 2 film 5 of 50 angstroms was further deposited on the surface of the amorphous silicon using molecular beams of oxygen and silicon. Next, the substrate temperature was raised to 650° C. to polycrystallize the amorphous silicon film to form a polycrystalline silicon film 4.
【００１３】このようにして成長した多結晶シリコン膜
４を透過電子顕微鏡で観察したところ、シリコン結晶粒
径は平均して数１０００オングストロームであり、従来
の方法による数１００オングストロームの結晶粒径に較
べ、一桁の増加があった。この結果は成長初期に大きな
結晶核を形成したことによると考えることができる。When the polycrystalline silicon film 4 grown in this manner was observed using a transmission electron microscope, it was found that the average silicon crystal grain size was several thousand angstroms, compared to the crystal grain size of several hundred angstroms obtained by the conventional method. , there was a single-digit increase. This result can be considered to be due to the formation of large crystal nuclei at the early stage of growth.
【００１４】[0014]
【発明の効果】以上説明したように、本発明の方法によ
って作製した多結晶シリコンの結晶粒径は通常の方法に
較べ、一桁増加しており、また、成長初期に大きな結晶
核を形成するためにゲルマニウムの添加や、イオン注入
などを行う必要もなく、大きな結晶粒径を有する多結晶
シリコン膜を簡便な方法で製造することができる。[Effects of the Invention] As explained above, the crystal grain size of polycrystalline silicon produced by the method of the present invention is increased by one order of magnitude compared to the conventional method, and large crystal nuclei are formed in the early stage of growth. Therefore, there is no need to add germanium or perform ion implantation, and a polycrystalline silicon film having a large crystal grain size can be manufactured by a simple method.
【図１】本発明の一実施例によって得られる多結晶シリ
コン膜の概略断面図である。FIG. 1 is a schematic cross-sectional view of a polycrystalline silicon film obtained according to an embodiment of the present invention.
１ シリコン基板 ２ ＳｉＯ２膜 ３ 結晶核 ４ 多結晶シリコン膜 ５ ＳｉＯ２膜 1 Silicon substrate 2 SiO2 film 3 Crystal nucleus 4 Polycrystalline silicon film 5 SiO2 film
Claims (1)
まず、非晶質基板上に高真空中で堆積した非晶質シリコ
ン薄膜を熱処理により結晶化し、その上に非晶質シリコ
ンを堆積し、次に非晶質シリコン表面にＳｉＯ２膜を付
着後、熱処理を行い、非晶質シリコンを結晶化すること
を特徴とする多結晶シリコン薄膜の製造方法。Claim 1: A method for manufacturing a polycrystalline silicon thin film, comprising:
First, an amorphous silicon thin film deposited on an amorphous substrate in a high vacuum is crystallized by heat treatment, amorphous silicon is deposited on top of it, and then a SiO2 film is attached to the amorphous silicon surface. A method for producing a polycrystalline silicon thin film, which comprises performing heat treatment to crystallize amorphous silicon.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7369491A JPH04286111A (en) | 1991-03-14 | 1991-03-14 | Manufacture of polycrystal silicon thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7369491A JPH04286111A (en) | 1991-03-14 | 1991-03-14 | Manufacture of polycrystal silicon thin film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04286111A true JPH04286111A (en) | 1992-10-12 |
Family
ID=13525585
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7369491A Pending JPH04286111A (en) | 1991-03-14 | 1991-03-14 | Manufacture of polycrystal silicon thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04286111A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107017153A (en) * | 2017-04-13 | 2017-08-04 | 京东方科技集团股份有限公司 | A kind of polysilicon membrane preparation method and polysilicon membrane |
-
1991
- 1991-03-14 JP JP7369491A patent/JPH04286111A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107017153A (en) * | 2017-04-13 | 2017-08-04 | 京东方科技集团股份有限公司 | A kind of polysilicon membrane preparation method and polysilicon membrane |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2695488B2 (en) | Crystal growth method | |
| CA2048517C (en) | Process for growing crystalline thin film | |
| JPH02260524A (en) | Crystalline semiconductor film and formation thereof | |
| US5234843A (en) | Method of making a semiconductor film where the hydrogen and/or fluorine is released prior to ion beam crystallization | |
| JP2800060B2 (en) | Method for manufacturing semiconductor film | |
| JPH0252419A (en) | Manufacture of semiconductor substrate | |
| JPH0329316A (en) | Formation of semiconductor thin film | |
| JPH059099A (en) | Method for growing crystal | |
| JPH02143414A (en) | Formation of single crystal film | |
| JPH02288328A (en) | Method of growing crystal | |
| JPS6360518A (en) | Growing method for crystal of semiconductor layer | |
| JP2833878B2 (en) | Method of forming semiconductor thin film | |
| JP3217419B2 (en) | Crystal film formation method | |
| JP2680114B2 (en) | Method for forming crystalline semiconductor thin film | |
| JPS63136510A (en) | Formation of polycrystalline silicon thin film | |
| JP2749945B2 (en) | Solid phase crystal growth method | |
| JPH04196311A (en) | Manufacture of semiconductor device | |
| JPS58112324A (en) | Manufacture of semiconductor device | |
| JPH0442918A (en) | Method of forming semiconductor thin film | |
| JPS63196032A (en) | Crystallization of semiconductor thin film | |
| JPH0397698A (en) | Formation of thin film | |
| JPH04180218A (en) | Crystal article and crystal growth method | |
| JPH05109617A (en) | Formation method of polycrystalline silicon film | |
| JPH02258690A (en) | Method of forming semiconductor thin film | |
| JPS6265409A (en) | Formation of semiconductor thin film |