JPH04288832A - Manufacturing apparatus for semiconductor device - Google Patents

Manufacturing apparatus for semiconductor device

Info

Publication number
JPH04288832A
JPH04288832A JP7841491A JP7841491A JPH04288832A JP H04288832 A JPH04288832 A JP H04288832A JP 7841491 A JP7841491 A JP 7841491A JP 7841491 A JP7841491 A JP 7841491A JP H04288832 A JPH04288832 A JP H04288832A
Authority
JP
Japan
Prior art keywords
semiconductor wafer
processing chamber
wafer processing
opening
closing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7841491A
Other languages
Japanese (ja)
Other versions
JP2901364B2 (en
Inventor
Ryoichi Watanabe
亮一 渡邉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Yamagata Ltd
Original Assignee
NEC Yamagata Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Yamagata Ltd filed Critical NEC Yamagata Ltd
Priority to JP3078414A priority Critical patent/JP2901364B2/en
Publication of JPH04288832A publication Critical patent/JPH04288832A/en
Application granted granted Critical
Publication of JP2901364B2 publication Critical patent/JP2901364B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Landscapes

  • Weting (AREA)

Abstract

PURPOSE:To keep an etching speed constant, by controlling a displacement volume discharged from a semiconductor wafer processing chamber in a single wafer etching apparatus. CONSTITUTION:An air flow sensor 7 for measuring an air flow speed is set in a semiconductor wafer processing chamber 2, and at the same time a reference-value input unit 8 is provided for entering a reference setting value and a control unit 9 is provided for comparing the reference input value with an actual value measured. The control unit 9 sends an output signal to a motor driving unit 10 to drive a step motor 11. Then, the opening angel of an autodamper 12 located in a discharging pipe 13 is automatically adjusted so as to control the displacement volume discharged from the semiconductor wafer processing chamber 2. Consequently, through the control of the displacement volume, the etching speed is kept constant.

Description

【発明の詳細な説明】[Detailed description of the invention]

【0001】0001

【産業上の利用分野】本発明は、半導体装置の製造装置
に関し、特に半導体ウェーハに薬液をシャワー状に噴出
してエッチングを行う枚葉式エッチング装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an apparatus for manufacturing semiconductor devices, and more particularly to a single-wafer etching apparatus for etching a semiconductor wafer by spraying a chemical solution onto the semiconductor wafer in the form of a shower.

【0002】0002

【従来の技術】従来の枚葉式エッチング装置は図3に示
すように、回転部4に吸着された半導体ウェーハ3を半
導体ウェーハ処理室2内で回転させ、シャワーノズル1
より薬液をシャワー状に噴出し、その噴出薬液5で半導
体ウェーハ3のエッチングを行う構造になっている。
2. Description of the Related Art As shown in FIG. 3, a conventional single-wafer etching apparatus rotates a semiconductor wafer 3 attracted to a rotating part 4 in a semiconductor wafer processing chamber 2, and a shower nozzle 1
The structure is such that a chemical liquid is ejected in the form of a shower, and the semiconductor wafer 3 is etched with the ejected chemical liquid 5.

【0003】この際、半導体ウェーハ処理室2の排気は
、半導体ウェーハ処理室2の側面の排気パイプ6から行
っている。また、排気量は、半導体ウェーハ処理室2と
手動ダンパ14を結ぶ排気配管13に設けた静止排気測
定器15を目視により観測し、適正規格範囲外の場合に
、手動にて手動ダンパ14を開閉し調節している。図4
は、従来技術の一連の動作を示すフローチャート図であ
る。
At this time, the semiconductor wafer processing chamber 2 is evacuated from an exhaust pipe 6 on the side surface of the semiconductor wafer processing chamber 2. In addition, the exhaust amount is determined by visually observing the stationary exhaust gas measuring device 15 installed in the exhaust pipe 13 connecting the semiconductor wafer processing chamber 2 and the manual damper 14, and if it is outside the appropriate standard range, manually opening or closing the manual damper 14. I am adjusting it. Figure 4
1 is a flowchart diagram showing a series of operations of the prior art.

【0004】0004

【発明が解決しようとする課題】この従来の枚葉式エッ
チング装置では、エッチング中に排気の元圧が変動する
と、半導体ウェーハ処理室の排気量も同様に変動し、エ
ッチング速度がばらついてしまい、その結果、エッチン
グパターン寸法のばらつきを生じてしまうという問題が
あった。
[Problems to be Solved by the Invention] In this conventional single-wafer type etching apparatus, if the source pressure of the exhaust fluctuates during etching, the exhaust volume of the semiconductor wafer processing chamber also fluctuates, causing variations in the etching speed. As a result, there is a problem in that variations in etching pattern dimensions occur.

【0005】半導体ウェーハのパターン寸法がばらつい
てパターン異常になると、半導体装置の歩留低下や信頼
性低下に影響を及ぼす。
[0005] When pattern dimensions of a semiconductor wafer vary and pattern abnormalities occur, this affects the yield and reliability of semiconductor devices.

【0006】近年、半導体装置の微細化に伴い、半導体
ウェーハ面内,半導体ウェーハ間のパターン寸法の均一
性向上は、半導体装置の品質に大きく寄与するところと
なった。
In recent years, with the miniaturization of semiconductor devices, improvement in the uniformity of pattern dimensions within a semiconductor wafer and between semiconductor wafers has greatly contributed to the quality of semiconductor devices.

【0007】本発明の目的は、半導体ウェーハ処理室内
での排気量の変動を抑えた半導体装置の製造装置を提供
することにある。
SUMMARY OF THE INVENTION An object of the present invention is to provide a semiconductor device manufacturing apparatus in which fluctuations in exhaust volume within a semiconductor wafer processing chamber are suppressed.

【0008】[0008]

【課題を解決するための手段】前記目的を達成するため
、本発明に係る半導体装置の製造装置においては、測定
機構と、開閉機構と、制御機構とを有し、半導体ウェー
ハに薬液をシャワー状に噴出させてエッチング処理を行
う半導体装置の製造装置であって、測定機構は、半導体
ウェーハ処理室の排気風速を測定する機構であり、開閉
機構は、排気配管の開閉度を調節する機構であり、制御
機構は、前記排気風速値から任意の数値に前記配管の開
閉度を制御する機構である。
[Means for Solving the Problems] In order to achieve the above-mentioned object, a semiconductor device manufacturing apparatus according to the present invention includes a measuring mechanism, an opening/closing mechanism, and a control mechanism, and the apparatus includes a measuring mechanism, an opening/closing mechanism, and a control mechanism, and the apparatus includes a measuring mechanism, an opening/closing mechanism, and a control mechanism, and the apparatus includes a measuring mechanism, an opening/closing mechanism, and a control mechanism, and the apparatus includes a measuring mechanism, an opening/closing mechanism, and a control mechanism. A manufacturing apparatus for semiconductor devices that performs etching processing by blowing air into the semiconductor wafer processing chamber. The control mechanism is a mechanism that controls the opening/closing degree of the piping to an arbitrary value based on the exhaust air velocity value.

【0009】[0009]

【作用】半導体ウェーハ処理室の排気風速を測定し、前
記排気風速値から任意の数値に、排気配管の開閉度を調
節する機構と、半導体ウェーハ処理室の排気配管の開閉
度を制御するものである。
[Operation] A mechanism that measures the exhaust air speed of the semiconductor wafer processing chamber and adjusts the opening/closing degree of the exhaust piping to an arbitrary value based on the exhaust air speed value, and controls the opening/closing degree of the exhaust piping of the semiconductor wafer processing chamber. be.

【0010】0010

【実施例】次に本発明について図面を参照して説明する
。図1は、本発明の一実施例を示す断面模式図である。 図において、1はシャワーノズル、2は半導体ウェーハ
処理室、3は、半導体ウェーハ、4は回転部、6は排気
パイプ。13は排気配管、12はオートダンパである。 さらに、本発明は、風速センサ7と、基準入力部8と、
制御部9と、モータ駆動部10と、ステップモータ11
とを有する。
DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, the present invention will be explained with reference to the drawings. FIG. 1 is a schematic cross-sectional view showing one embodiment of the present invention. In the figure, 1 is a shower nozzle, 2 is a semiconductor wafer processing chamber, 3 is a semiconductor wafer, 4 is a rotating part, and 6 is an exhaust pipe. 13 is an exhaust pipe, and 12 is an auto damper. Furthermore, the present invention includes a wind speed sensor 7, a reference input section 8,
Control unit 9, motor drive unit 10, and step motor 11
and has.

【0011】半導体ウェーハ3を半導体ウェーハ処理室
2の回転部4へ搬入し、シャワーノズル1からの噴出薬
液5にてウェーハ3のエッチング処理を行う。
The semiconductor wafer 3 is carried into the rotating section 4 of the semiconductor wafer processing chamber 2, and the wafer 3 is etched using the chemical solution 5 jetted from the shower nozzle 1.

【0012】一方、半導体ウェーハ処理室2内は、排気
パイプ6より排気する。その際、半導体ウェーハ処理室
2内の排気風速を、半導体ウェーハ処理室2の側面に設
置した風速センサで測定し、風速センサ7による風速測
定値と、基準入力部8により予め設定した設定値とを制
御部9により比較し、ある偏差値に達すると制御部9は
、モータ駆動部10に出力信号を発信する。
On the other hand, the inside of the semiconductor wafer processing chamber 2 is exhausted from an exhaust pipe 6. At that time, the exhaust air speed in the semiconductor wafer processing chamber 2 is measured by a wind speed sensor installed on the side of the semiconductor wafer processing chamber 2, and the wind speed measurement value by the wind speed sensor 7 and the setting value preset by the reference input section 8 are combined. are compared by the control unit 9, and when a certain deviation value is reached, the control unit 9 transmits an output signal to the motor drive unit 10.

【0013】モータ駆動部10は、ステップモータ11
を駆動させ、排気配管13に設けたオートダンパ12の
開閉度を自動的に調節する。
The motor drive unit 10 includes a step motor 11
to automatically adjust the opening/closing degree of the auto damper 12 provided in the exhaust pipe 13.

【0014】エッチング終了後、半導体ウェーハ3は、
回転部4から搬出される。以上の動作が順次繰り返され
る。
After the etching is completed, the semiconductor wafer 3 is
It is carried out from the rotating part 4. The above operations are repeated in sequence.

【0015】図2は、実施例における一連の動作を示す
フローチャート図である。
FIG. 2 is a flowchart showing a series of operations in the embodiment.

【0016】[0016]

【発明の効果】以上説明したように本発明は、半導体ウ
ェーハ処理室の排気風速値を測定し、最適とされる排気
風速になるようにダンパを自動的に開閉するため、排気
量を一定に保持することが可能となり、排気量の変動に
よるエッチング速度のばらつきの低減が実現できるとい
う効果を有する。
Effects of the Invention As explained above, the present invention measures the exhaust air velocity value of the semiconductor wafer processing chamber and automatically opens and closes the damper to maintain the optimum exhaust air velocity, thereby keeping the exhaust volume constant. This has the effect that variations in etching rate due to fluctuations in displacement can be reduced.

【図面の簡単な説明】[Brief explanation of the drawing]

【図1】本発明の一実施例を示す断面模式図である。FIG. 1 is a schematic cross-sectional view showing one embodiment of the present invention.

【図2】本発明の一実施例における一連の動作を示すフ
ローチャート図である。
FIG. 2 is a flowchart showing a series of operations in an embodiment of the present invention.

【図3】従来例を示す断面模式図である。FIG. 3 is a schematic cross-sectional view showing a conventional example.

【図4】従来例の動作を示すフローチャート図である。FIG. 4 is a flowchart showing the operation of a conventional example.

【符号の説明】[Explanation of symbols]

1  シャワーノズル 2  半導体ウェーハ処理室 3  半導体ウェーハ 4  回転部 5  噴出薬液 6  排気パイプ 7  風速センサ 8  基準入力部 9  制御部 10  モータ駆動部 11  ステップモータ 12  オートダンパ 13  排気配管 14  手動ダンパ 15  静止排気測定器 1 Shower nozzle 2 Semiconductor wafer processing room 3 Semiconductor wafer 4 Rotating part 5 Gushing chemical liquid 6 Exhaust pipe 7 Wind speed sensor 8 Standard input section 9 Control section 10 Motor drive section 11 Step motor 12 Auto damper 13 Exhaust piping 14 Manual damper 15 Static exhaust gas measuring device

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】  測定機構と、開閉機構と、制御機構と
を有し、半導体ウェーハに薬液をシャワー状に噴出させ
てエッチング処理を行う半導体装置の製造装置であって
、測定機構は、半導体ウェーハ処理室の排気風速を測定
する機構であり、開閉機構は、排気配管の開閉度を調節
する機構であり、制御機構は、前記排気風速値から任意
の数値に前記配管の開閉度を制御する機構であることを
特徴とする半導体装置の製造装置。
1. A semiconductor device manufacturing apparatus comprising a measuring mechanism, an opening/closing mechanism, and a control mechanism, and performs an etching process by spouting a chemical solution onto a semiconductor wafer in a shower form, the measuring mechanism comprising: a measuring mechanism, an opening/closing mechanism, and a control mechanism; A mechanism that measures the exhaust air speed of the processing chamber, an opening/closing mechanism that adjusts the degree of opening and closing of the exhaust piping, and a control mechanism that controls the degree of opening and closing of the piping from the exhaust air speed value to an arbitrary value. A semiconductor device manufacturing apparatus characterized by:
JP3078414A 1991-03-18 1991-03-18 Semiconductor device manufacturing equipment Expired - Fee Related JP2901364B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3078414A JP2901364B2 (en) 1991-03-18 1991-03-18 Semiconductor device manufacturing equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3078414A JP2901364B2 (en) 1991-03-18 1991-03-18 Semiconductor device manufacturing equipment

Publications (2)

Publication Number Publication Date
JPH04288832A true JPH04288832A (en) 1992-10-13
JP2901364B2 JP2901364B2 (en) 1999-06-07

Family

ID=13661383

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3078414A Expired - Fee Related JP2901364B2 (en) 1991-03-18 1991-03-18 Semiconductor device manufacturing equipment

Country Status (1)

Country Link
JP (1) JP2901364B2 (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58171819A (en) * 1982-04-01 1983-10-08 Toshiba Corp Semiconductor processing apparatus
JPS614576A (en) * 1984-06-15 1986-01-10 Hoya Corp Spraying method

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58171819A (en) * 1982-04-01 1983-10-08 Toshiba Corp Semiconductor processing apparatus
JPS614576A (en) * 1984-06-15 1986-01-10 Hoya Corp Spraying method

Also Published As

Publication number Publication date
JP2901364B2 (en) 1999-06-07

Similar Documents

Publication Publication Date Title
US4986216A (en) Semiconductor manufacturing apparatus
US6192898B1 (en) Method and apparatus for cleaning a chamber
US6197123B1 (en) Method for cleaning a process chamber used for manufacturing substrates during nonproduction intervals
US7155319B2 (en) Closed loop control on liquid delivery system ECP slim cell
JPH11176734A (en) Resist coating equipment
JP2901364B2 (en) Semiconductor device manufacturing equipment
JP3606753B2 (en) Vacuum pressure control valve
JP2982290B2 (en) Exhaust device
US20040118436A1 (en) Method and apparatus for thermal gas purging
JPH05121361A (en) Semiconductor wafer cooler
JPH07211693A (en) Method for detecting end point of etching
JP2629447B2 (en) Chemical coating device
JP2002097571A (en) Method and apparatus for producing functional film
JP2953479B2 (en) Resist coating apparatus and method
KR100196901B1 (en) Method for measuring pressure of vacuum chamber
JP2674756B2 (en) Semiconductor manufacturing equipment
JPH11304688A (en) Gas exhaust system for particle monitor
JPH10161751A (en) Liquid flow control method and liquid flow control device
KR20050028457A (en) Method and equipment for controlling exhaust pressure of semiconductor coating device thereof
JPH06349759A (en) Heat treatment equipment
KR20230114122A (en) Method of setting reference value for proportional pressure control valve control in pressure control system and pressure control system using the same
KR100875818B1 (en) Vacuum regulator of chemical vapor deposition chamber
JPH08139085A (en) Semiconductor manufacturing equipment
US5916411A (en) Dry etching system
JP2003249491A (en) Cvd system and method

Legal Events

Date Code Title Description
R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees