JPH04292784A - Disc-shaped plasma image heater - Google Patents

Disc-shaped plasma image heater

Info

Publication number
JPH04292784A
JPH04292784A JP5474391A JP5474391A JPH04292784A JP H04292784 A JPH04292784 A JP H04292784A JP 5474391 A JP5474391 A JP 5474391A JP 5474391 A JP5474391 A JP 5474391A JP H04292784 A JPH04292784 A JP H04292784A
Authority
JP
Japan
Prior art keywords
sample
disk
focal point
shaped
ellipsoidal mirror
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5474391A
Other languages
Japanese (ja)
Inventor
Toshio Abe
俊雄 阿部
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP5474391A priority Critical patent/JPH04292784A/en
Publication of JPH04292784A publication Critical patent/JPH04292784A/en
Pending legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16Heating of the molten zone
    • C30B13/22Heating of the molten zone by irradiation or electric discharge

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Furnace Details (AREA)

Abstract

PURPOSE:To improve performance, i.e., increase in size of an opening diameter of a sample, uniformity of a temperature, easiness of maintenance, temperature stability of a disc-shaped plasma image heater. CONSTITUTION:A disc-shaped plasma lamp 2 sealed with metal element and gas in a light transmission spherical shell is disposed at a focus of an elliptical mirror 1, a cavity resonator 5 incorporating the lamp 2 and a magnetron 25 is provided, a wavelength is selected in a range from an ultraviolet light to a near infrared light, and a sample 8 is irradiated by the light to be heated. An atmosphere is regulated by a flowrate regulator 28 and a vacuum pump 29 while heating the sample 8, and the sample is moved while rotating to manufacture a crystal. A temperature of the sample 8 is measured to be grasped by a radiation thermometer 21 with a wavelength near 0.9 micron through a temperature observation window 22, while a heat power source is controlled by a control computer 23 to control oscillation of the magnetron 25, thereby controlling the temperature of the sample 8 to a desired value.

Description

【発明の詳細な説明】[Detailed description of the invention]

【0001】0001

【産業上の利用分野】この発明は、例えば半導体材料な
どの結晶成長に使用されるイメージ炉の円盤型プラズマ
イメージ加熱装置の改良に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an improvement in a disk-type plasma image heating device for an image furnace used for growing crystals of semiconductor materials, for example.

【0002】0002

【従来の技術】図19は例えば特開昭63−22348
7号公報に示された従来の円盤型プラズマイメージ加熱
装置を示す断面図である。図において、1は楕円体の反
射面を内側に有する楕円体鏡、11は楕円体鏡1の第1
の焦点位置に設置され光9を発光するハロゲンやキセノ
ンランプ等の光源、12はこの光源11に電力を供給す
るためワイヤ13経由接続された電源、8は楕円体鏡1
の第2焦点に置かれた試料である。
[Prior Art] FIG. 19 shows, for example, Japanese Patent Application Laid-Open No. 63-22348.
FIG. 7 is a sectional view showing a conventional disk-type plasma image heating device disclosed in Publication No. 7. In the figure, 1 is an ellipsoidal mirror that has an ellipsoidal reflective surface inside, and 11 is the first mirror of the ellipsoidal mirror 1.
A light source such as a halogen or xenon lamp is installed at the focal point of the lamp and emits light 9; 12 is a power source connected via a wire 13 to supply power to the light source 11; 8 is an ellipsoidal mirror 1;
This is the sample placed at the second focus of the image.

【0003】次に動作について説明する。楕円体鏡1で
光源の光が試料に集光して加熱し棒状の試料が溶解する
。この溶解した部分は試料が軸方向に移動するに連れて
移動していくと溶解部の溶液の中に原料が溶け出して結
晶が成長する。この溶液の組成と原料の組成は必ず平衡
状態になるので結晶の組成は均質に維持される。従って
、ドーパントの濃度を均一にした単結晶の製造には最も
適した方法として注目されている。
Next, the operation will be explained. The light from the light source is focused on the sample by the ellipsoidal mirror 1 and heated, thereby dissolving the rod-shaped sample. As this dissolved part moves as the sample moves in the axial direction, the raw material dissolves into the solution in the dissolved part and crystals grow. Since the composition of this solution and the composition of the raw material are always in equilibrium, the composition of the crystal is maintained homogeneous. Therefore, it is attracting attention as the most suitable method for producing single crystals with a uniform dopant concentration.

【0004】0004

【発明が解決しようとする課題】従来の円盤型プラズマ
イメージ加熱装置は以上のように構成されていたので単
結晶の製造装置として現在も盛んに用いられている。と
ころが、光源にハロゲンランプやキセノンランプ等の電
極を持つランプを使うと光の波長が選択できないので試
料の表面でのみ吸収されてしまう。この状態では浮遊溶
融部と原料との界面は上に凸の形状となり溶液が下に流
れ出してしまう。従って、単結晶の直径を大きくできず
1cm程度の小開口径の結晶しか製造できなかった。
The conventional disk-type plasma image heating apparatus is constructed as described above, and is therefore still widely used as a single-crystal manufacturing apparatus. However, if a lamp with electrodes, such as a halogen lamp or a xenon lamp, is used as a light source, the wavelength of the light cannot be selected, so the light is absorbed only at the surface of the sample. In this state, the interface between the floating molten part and the raw material has an upwardly convex shape, and the solution flows downward. Therefore, the diameter of the single crystal could not be increased, and only crystals with a small opening diameter of about 1 cm could be produced.

【0005】一方、試料の直径を大きくする方法として
坩堝を用いた結晶引き上げ法が用いられているが、坩堝
の汚染が発生しどうしても純粋な結晶を製造することが
できなかった。このことは特に大口径の光学結晶などの
製造する場合において問題となっており、従来は坩堝を
用いていたが、坩堝から混入する不純物の問題や結晶品
質の不均一の問題等があってまだ完全な光学結晶は量産
されていない。レーザロッド等の用途において結晶の完
全化は非常に重要な課題であるが坩堝法に代わって大開
口径の結晶を製造する方法が無かった。浮遊溶融帯法を
利用するイメージ加熱装置が期待されているが結晶の材
料を表面から加熱してしまうので保持できず大開口径の
結晶は製造できていない。そこで新しい製造装置が望ま
れていた。
On the other hand, as a method for increasing the diameter of a sample, a crystal pulling method using a crucible has been used, but it has been impossible to produce pure crystals due to contamination of the crucible. This is a problem especially when manufacturing large-diameter optical crystals, etc. Conventionally, crucibles have been used, but there are still problems such as impurities mixed in from the crucible and uneven crystal quality. Perfect optical crystals are not mass-produced. Perfecting crystals is a very important issue in applications such as laser rods, but there has been no method to manufacture crystals with large openings in place of the crucible method. Image heating devices using the floating molten zone method are expected, but since the crystal material is heated from the surface, it cannot be held, and crystals with large opening diameters have not been manufactured. Therefore, new manufacturing equipment was desired.

【0006】また、ランプの寿命がハロゲンの場合、約
40時間程度(宇宙用の場合。地上用では200時間く
らい)と非常に短いため予備のハロゲンランプを多く必
要とし、光学結晶の量産においては致命的な問題であっ
た。
[0006] In addition, the lifespan of halogen lamps is very short, about 40 hours (for space applications; about 200 hours for terrestrial applications), so many spare halogen lamps are required, and this is difficult in the mass production of optical crystals. This was a fatal problem.

【0007】さらに、ハロゲンやキセノンランプの場合
には直接に光でガラスを融解することが出来ず、白金の
金網の中にガラスを入れてイメージ加熱を行っていたの
でガラスを溶解したときに白金が侵入し品質を劣化させ
る原因となっていた。このことは例えば赤外線ファイバ
等の材料の処理において大きな障害となっていた。すな
わち、遠赤外線ファイバの損失を増大させる一つの要因
は坩堝や材料の中に混在する重イオン等の不純物である
。これは坩堝を用いる限り除く事はできない。
Furthermore, in the case of halogen or xenon lamps, it is not possible to melt glass directly with light, and image heating is performed by placing the glass in a platinum wire mesh, so when glass is melted, platinum was causing the intrusion and deterioration of quality. This has been a major obstacle in the processing of materials such as infrared fibers, for example. That is, one factor that increases the loss of far-infrared fibers is impurities such as heavy ions mixed in the crucible and materials. This cannot be removed as long as a crucible is used.

【0008】さらに、ハロゲンランプの光源の発光領域
が5mm程度と小さいので試料の表面で小さな像を結ぶ
。このため温度勾配がきつくなって試料にクラックが入
るため試料の加熱領域を広くしたり狭くしたり調節する
必要がある。この調節は楕円体鏡の一部を移動して焦点
をぼかして調節したりアフターヒーターを取り付けてこ
の問題に対応していた。しかし、これらの機構を取り付
けることは非常に炉の操作性を悪くし、装置の構成を複
雑にし性能を損なう原因となっており大きな問題となっ
ていた。
Furthermore, since the light emitting area of the halogen lamp light source is small, about 5 mm, a small image is formed on the surface of the sample. For this reason, the temperature gradient becomes steeper and cracks appear in the sample, so it is necessary to adjust the heating area of the sample by widening or narrowing it. This adjustment was done by moving a part of the ellipsoidal mirror to blur its focus and by installing an after-heater. However, the installation of these mechanisms greatly impairs the operability of the furnace, complicates the configuration of the device, and impairs performance, posing a major problem.

【0009】また、さらに従来の光源が狭い範囲を加熱
するものであるため試料の円周方向に均一な加熱ができ
ずこのため、試料を100rpmもの高速で回転し温度
を均一にする方法を用いている。ところがこのような高
速回転を試料に与えると結晶の均一な成長を阻害し、微
小重力実験においてはさらに人工重力を作り出すから気
泡が結晶の内側に遠心力の作用で入り込んでしまい絶対
に外へでてこないという重大な問題が生ずる。現在のと
ころまだこの問題は世界的に解決されておらずシャトル
の宇宙実験などにおけるイメージ炉は試料を高速回転し
て均一加熱する方式をとっており微小重力の効果が十分
に発揮できない事が心配される。
Furthermore, since the conventional light source heats a narrow area, it is not possible to uniformly heat the sample in the circumferential direction. Therefore, a method of rotating the sample at a high speed of 100 rpm to make the temperature uniform is used. ing. However, applying such high-speed rotation to the sample inhibits the uniform growth of the crystal, and in microgravity experiments, artificial gravity is created, which causes air bubbles to get inside the crystal due to centrifugal force and never come out. A serious problem arises: At present, this problem has not yet been solved worldwide, and image reactors used in shuttle space experiments use a method that rotates the sample at high speed and heats it uniformly, so there is concern that the effects of microgravity may not be fully demonstrated. be done.

【0010】この発明は上記のような問題点を解決する
ためになされたものであり、光源を任意形状の円盤型プ
ラズマランプとしてこれを回転することで試料に対する
光の入射分布を調節し、また試料の全周にわたり光を入
射させ、試料の表面の温度勾配をハロゲンランプと同様
の急峻なものにしたり逆に広い分布の光束にして温度分
布を緩くする事が出来る。また、寿命が長く、加熱の波
長を選択して吸収帯域の波長でガラスをも融解でき、光
学結晶の大口径化を可能とするものである。
The present invention was made to solve the above-mentioned problems, and the light source is a disc-shaped plasma lamp of arbitrary shape, and by rotating the lamp, the incident distribution of light on the sample is adjusted. By making light incident around the entire circumference of the sample, it is possible to make the temperature gradient on the sample surface as steep as that of a halogen lamp, or conversely, to make the temperature distribution gentle by making the light beam spread over a wide range. In addition, it has a long life, can melt glass at a wavelength in the absorption band by selecting the heating wavelength, and makes it possible to increase the diameter of optical crystals.

【0011】[0011]

【課題を解決するための手段】この発明に係わる円盤型
プラズマイメージ加熱装置は光源に石英や透光性セラミ
ックス等の透光性容器内に元素を封入し、この元素をマ
イクロ波(2.4GHZ近辺の電子レンジ周波数帯)で
加熱しプラズマを容器内に作りその発光を利用する円盤
型プラズマランプを用いる。この円盤型プラズマランプ
を楕円体鏡と電波遮蔽板とで形成されるお椀状の空胴共
振器に収納し、円盤型プラズマランプの発光を試料に集
光する楕円体鏡を備えて、試料を楕円体鏡の一つの焦点
位置で短軸方向に設置しておき、この試料の一部を加熱
溶解しながら試料を短軸方向に移動して結晶を成長させ
る。
[Means for Solving the Problems] A disk-type plasma image heating device according to the present invention has an element sealed in a light-transmitting container such as quartz or transparent ceramics as a light source, and the element is heated by microwave (2.4 GHZ). A disk-shaped plasma lamp is used, which generates plasma in a container by heating with a microwave frequency (near microwave frequency band) and utilizes the emitted light. This disk-shaped plasma lamp is housed in a bowl-shaped cavity resonator formed by an ellipsoidal mirror and a radio wave shielding plate, and an ellipsoidal mirror is provided to focus the light emitted from the disk-shaped plasma lamp onto the sample. An ellipsoidal mirror is placed in the short axis direction at one focal point, and a part of the sample is heated and melted while the sample is moved in the short axis direction to grow crystals.

【0012】また別の発明に係わる円盤型プラズマイメ
ージ加熱装置は上記の円盤型プラズマランプのコップ状
の円筒型空胴共振器に収納し、円盤型プラズマランプの
発光を試料に集光する楕円体鏡を備えて、試料を楕円体
鏡の一つの焦点位置で短軸方向に設置しておき、この試
料の一部を加熱溶解しながら試料を短軸方向に移動して
結晶を成長させる。
A disk-shaped plasma image heating device according to another invention includes an ellipsoid that is housed in a cup-shaped cylindrical cavity resonator of the disk-shaped plasma lamp described above, and that focuses the light emitted from the disk-shaped plasma lamp onto a sample. A mirror is provided, and a sample is placed in the short axis direction at one focal point of the ellipsoidal mirror, and a part of the sample is heated and melted while the sample is moved in the short axis direction to grow crystals.

【0013】また、別の発明に係わる円盤型プラズマイ
メージ加熱装置は光源に石英や透光性セラミックス等の
透光性容器内に元素を封入し、この元素をマイクロ波(
2.4GHZ近辺の電子レンジ周波数帯)で加熱しプラ
ズマを容器内に作りその発光を利用する円盤型プラズマ
ランプを用いる。この円盤型プラズマランプを楕円体鏡
と電波遮蔽板とで形成されるお椀状の空胴共振器に収納
し、円盤型プラズマランプの発光を試料に集光する楕円
体鏡を備えて、試料を楕円体鏡の焦点を含む長軸上に設
置しておき、この試料の一部を加熱溶解しながら試料を
長軸方向に移動して結晶を成長させる。
[0013] In addition, a disk-type plasma image heating device according to another invention uses a light source that encloses an element in a translucent container such as quartz or translucent ceramic, and heats the element with microwaves (
A disk-shaped plasma lamp is used, which is heated in a microwave oven frequency band around 2.4 GHz to create plasma in a container and utilizes the emitted light. This disk-shaped plasma lamp is housed in a bowl-shaped cavity resonator formed by an ellipsoidal mirror and a radio wave shielding plate, and an ellipsoidal mirror is provided to focus the light emitted from the disk-shaped plasma lamp onto the sample. The ellipsoidal mirror is placed on the long axis including the focal point, and a part of the sample is heated and melted while the sample is moved in the long axis direction to grow crystals.

【0014】また別の発明に係わる円盤型プラズマイメ
ージ加熱装置は上記の円盤型プラズマランプのコップ状
の円筒型空胴共振器に収納し、円盤型プラズマランプの
発光を試料に集光する楕円体鏡を備えて、試料を楕円体
鏡の一つの焦点位置で長軸方向に設置しておき、この試
料の一部を加熱溶解しながら試料を長軸方向に移動して
結晶を成長させる。
A disk-shaped plasma image heating device according to another invention includes an ellipsoid that is housed in the cup-shaped cylindrical cavity resonator of the disk-shaped plasma lamp described above, and focuses the light emitted from the disk-shaped plasma lamp onto a sample. A mirror is provided, and a sample is placed in the long axis direction at one focal point of the ellipsoidal mirror, and a part of the sample is heated and melted while the sample is moved in the long axis direction to grow crystals.

【0015】またさらに別の発明に係わる円盤型プラズ
マイメージ加熱装置は上記の円盤型プラズマランプを楕
円体鏡と電波遮蔽板とで形成されるお椀状の空胴共振器
に収納し、円盤型プラズマランプの発光を試料に集光す
る楕円体鏡と、試料を回転するモータと、試料を移動さ
せる移動装置と、を加熱溶解しながら試料を短軸方向に
移動して結晶を成長させるものであるが、試料の温度を
放射温度計で計測して温度制御にその情報を利用する。 また、試料を炉心管に入れて試料の周りの雰囲気を制御
する。
A disk-shaped plasma image heating device according to still another invention houses the disk-shaped plasma lamp described above in a bowl-shaped cavity resonator formed by an ellipsoidal mirror and a radio wave shielding plate, and generates a disk-shaped plasma image. An ellipsoidal mirror that focuses the light emitted from the lamp onto the sample, a motor that rotates the sample, and a moving device that moves the sample are heated and melted while moving the sample in the minor axis direction to grow crystals. However, the temperature of the sample is measured with a radiation thermometer and that information is used for temperature control. In addition, the sample is placed in the furnace tube and the atmosphere around the sample is controlled.

【0016】また、さらに別の発明は上記の場合におい
て試料を楕円体鏡の焦点位置を含む長軸の上に設置して
おき、この試料の一部を加熱溶解しながら試料を長軸方
向に移動して結晶を成長させるものである。
Furthermore, in the above case, the sample is placed on the long axis including the focal position of the ellipsoidal mirror, and a part of the sample is heated and melted while the sample is moved in the long axis direction. It moves and grows crystals.

【0017】またさらに別の発明に係わる円盤型プラズ
マイメージ加熱装置は上記の円盤型プラズマランプのコ
ップ状の円筒型空胴共振器に収納し、円盤型プラズマラ
ンプの発光を試料に集光する楕円体鏡を備えて、試料を
楕円体鏡の一つの焦点位置で短軸方向に設置しておき、
この試料の一部を加熱溶解しながら試料を短軸方向に移
動して結晶を成長させるものであるが、試料の温度を放
射温度計で計測して温度制御にその情報を利用する。ま
た、試料を炉心管に入れて試料の周りの雰囲気を制御す
る。
A disk-type plasma image heating device according to still another invention is housed in a cup-shaped cylindrical cavity resonator of the disk-type plasma lamp described above, and an ellipse that focuses the light emitted from the disk-type plasma lamp onto a sample. Equipped with an ellipsoidal mirror, the sample is placed in the short axis direction at one focal point of the ellipsoidal mirror.
Crystals are grown by moving the sample in the minor axis direction while heating and melting a portion of the sample.The temperature of the sample is measured with a radiation thermometer and this information is used for temperature control. In addition, the sample is placed in the furnace tube and the atmosphere around the sample is controlled.

【0018】また、さらに別の発明は上記の場合におい
て試料を楕円体鏡の焦点位置を含む長軸の上に設置して
おき、この試料の一部を加熱溶解しながら試料を長軸方
向に移動して結晶を成長させるものである。
Still another invention is that in the above case, the sample is placed on the long axis including the focal position of the ellipsoidal mirror, and the sample is moved in the long axis direction while heating and melting a part of the sample. It moves and grows crystals.

【0019】[0019]

【作用】この発明における円盤型プラズマランプは光源
の形状が円盤型であるため第2焦点における光の分布を
円盤型に出来るから、試料の全周にわたって均一な加熱
が行えるから高速な回転は不要となる。また、ランプを
90度回転すれば広い範囲を加熱する事ができる。また
、ランプの発光波長を紫外から赤外まで設定できるので
ガラスの吸収帯域でイメージ加熱が可能となる。
[Operation] Since the disc-shaped plasma lamp of this invention has a disc-shaped light source, the distribution of light at the second focal point can be made into a disc-shape, so that uniform heating can be achieved over the entire circumference of the sample, so high-speed rotation is not required. becomes. Also, by rotating the lamp 90 degrees, you can heat a wide area. Furthermore, since the emission wavelength of the lamp can be set from ultraviolet to infrared, it is possible to perform image heating in the absorption band of glass.

【0020】[0020]

【実施例】実施例1.以下、この発明の一実施例による
円盤型プラズマイメージ加熱装置を図について説明する
。図1はこの発明の一実施例による円盤型プラズマイメ
ージ加熱装置の構成を示す断面図で1は楕円体鏡、2は
ガラスや透光性セラミックで出来た中空の楕円体である
円盤型容器の内部にカリュウム等の元素を封じ込みマイ
クロ波加熱でプラズマ発光を行い光9を放出する円盤型
プラズマランプ、3は熱伝導性の高いセラミックを棒状
に加工して作った支持具、4は円盤状の周縁を楕円体鏡
1の内側に接して取り付けられた電波遮蔽板、5は楕円
体鏡1の端部と電波遮蔽板4で形成されたお椀状の空胴
共振器、6は楕円体鏡1の端部に開けられた穴に取り付
けられる導波管、7は導波管6の他端に取り付けられる
高周波発信器、8は楕円体鏡1の第2焦点において短軸
方向に設置した棒状の試料、14は導波管6と楕円体鏡
1の接点に開けられた窓である。15は支持具3を固着
して楕円体鏡1の端部で回転する回転具であり、電波透
過性の材料で構成される。この回転具は試料8における
集光分布を円盤型プラズマランプ2の回転によって変化
させ、最適な分布を得るものである。
[Example] Example 1. DESCRIPTION OF THE PREFERRED EMBODIMENTS A disk-type plasma image heating device according to an embodiment of the present invention will be described below with reference to the drawings. FIG. 1 is a cross-sectional view showing the configuration of a disk-shaped plasma image heating device according to an embodiment of the present invention, in which 1 is an ellipsoidal mirror, and 2 is a hollow ellipsoidal disk-shaped container made of glass or translucent ceramic. A disk-shaped plasma lamp that seals elements such as potassium inside and generates plasma light by microwave heating and emits light 9; 3 is a support made by processing highly thermally conductive ceramic into a rod shape; 4 is a disk-shaped 5 is a bowl-shaped cavity resonator formed by the end of the ellipsoidal mirror 1 and the radio wave shielding plate 4, and 6 is an ellipsoidal mirror. 1 is a waveguide attached to a hole drilled at the end of the waveguide 6; 7 is a high-frequency oscillator attached to the other end of the waveguide 6; 8 is a rod-shaped rod installed in the short axis direction at the second focal point of the ellipsoidal mirror 1; In the sample, 14 is a window opened at the contact point between the waveguide 6 and the ellipsoidal mirror 1. Reference numeral 15 denotes a rotating tool to which the supporter 3 is fixed and rotated at the end of the ellipsoidal mirror 1, and is made of a radio wave transparent material. This rotary tool changes the focused light distribution on the sample 8 by rotating the disc-shaped plasma lamp 2 to obtain an optimal distribution.

【0021】また図2は円盤型プラズマランプ2の付近
の構成を説明する図である。図において、空胴共振器5
に高周波発信器7から2GHz等の高周波数で1KWか
ら5KWのマイクロ波電力が導波管6および回転具15
経由印加される。空胴共振器5に収納された円盤型プラ
ズマランプ2はプラズマ発光を生じて3KW程度の強力
な光を発する。この光は楕円体鏡1の内面で反射し第2
焦点の試料8へ集光される。ここで試料8が高熱となっ
て溶融される。試料8をゆっくりと回転しながら引き上
げて行くと結晶が成長する。この場合の試料8の側面上
の温度分布は図3のように全周に光が回って均一な加熱
が可能となる。従って従来のように高速で回転する必要
はなく低速で回転して固体と液体の固溶層境界面を作り
、固溶層境界面にきれいな層流を作れる程度の低速回転
で結晶成長を行う事ができる。
FIG. 2 is a diagram illustrating the configuration of the vicinity of the disk-shaped plasma lamp 2. As shown in FIG. In the figure, cavity resonator 5
Microwave power of 1KW to 5KW at a high frequency such as 2 GHz is transmitted from the high frequency oscillator 7 to the waveguide 6 and the rotating tool 15.
Applied via. The disk-shaped plasma lamp 2 housed in the cavity resonator 5 generates plasma light and emits a powerful light of about 3 KW. This light is reflected on the inner surface of the ellipsoidal mirror 1 and
The light is focused on the sample 8 at the focal point. Here, sample 8 becomes highly heated and melts. When sample 8 is slowly rotated and pulled up, crystals grow. In this case, the temperature distribution on the side surface of the sample 8 is such that the light circulates around the entire circumference, as shown in FIG. 3, and uniform heating is possible. Therefore, it is not necessary to rotate at a high speed as in the conventional method, but to rotate at a low speed to create a solid solution layer interface between solid and liquid, and to perform crystal growth at a low rotation speed that can create a clean laminar flow at the solid solution layer interface. Can be done.

【0022】図4は円盤型プラズマランプ2を用いて試
料8(ここではアルミニュウム)の加熱実験を単楕円円
盤型プラズマイメージ加熱装置を用いて行なった結果を
示すもので、横軸に時間を縦軸に温度を示す。実験に用
いた円盤型プラズマランプ2は近赤外の0.76ミクロ
ンの波長で発光するものである。この図からわかるよう
にアルミニュウムの試料8が2分間程度で660度に達
して融解している。この時の円盤型プラズマランプ2入
力電力は約300Wである。
FIG. 4 shows the results of a heating experiment of a sample 8 (aluminum in this case) using a disk-shaped plasma lamp 2 using a single elliptical disk-type plasma image heating device, with time plotted vertically on the horizontal axis. The temperature is shown on the axis. The disk-shaped plasma lamp 2 used in the experiment emits light at a near-infrared wavelength of 0.76 microns. As can be seen from this figure, the aluminum sample 8 reached 660 degrees and melted in about 2 minutes. At this time, the input power of the disc-shaped plasma lamp 2 is approximately 300W.

【0023】また、図5は解析でタングステン試料8の
場合の最高到達温度を求めたものである。この場合はラ
ンプの形状寸法を10、20、30mmの3種類につい
て計算している。このように、現在市販しているキセノ
ンランプを用いた炉に比較して優れた加熱性能を発揮す
るものである。これは円盤型プラズマランプ2の発光ス
ペクトラムは試料8の吸光率の最も高い波長、例えば近
赤外領域に集中させる事ができるのでキセノンランプ等
に比較して非常に高い加熱効率を得ることが出来るため
である。
Furthermore, FIG. 5 shows the maximum temperature reached in the case of tungsten sample 8 determined by analysis. In this case, calculations are made for three types of lamp shapes: 10, 20, and 30 mm. In this way, it exhibits superior heating performance compared to furnaces using xenon lamps currently on the market. This is because the emission spectrum of the disk-shaped plasma lamp 2 can be concentrated in the wavelength where the sample 8 has the highest absorbance, for example in the near-infrared region, so it is possible to obtain extremely high heating efficiency compared to xenon lamps, etc. It's for a reason.

【0024】また、図6は円盤型プラズマランプ2の発
光スペクトラムを実測した結果を示す図で、この場合の
円盤型プラズマランプ2は0.76ミクロンを発光する
ようにカリュウムを封入しているのでこの近辺に鋭い発
光がみられる。この様な波長選択性を利用すると試料8
の内部にまで光が入射するので内部から発熱が起こり試
料8の溶解部分と固体部分の固溶層境界面が平面や凹面
になり融液の漏れ出しを防止できる。従って、従来の方
法よりも大きな直径の試料8を浮遊帯域法で処理できる
事になる。
FIG. 6 is a diagram showing the result of actually measuring the emission spectrum of the disc-shaped plasma lamp 2. In this case, the disc-shaped plasma lamp 2 is filled with potassium so as to emit light of 0.76 microns. A sharp luminescence can be seen near this area. Using this kind of wavelength selectivity, sample 8
Since the light enters the inside of the sample 8, heat is generated from inside, and the solid solution layer interface between the melted portion and the solid portion of the sample 8 becomes a flat or concave surface, thereby preventing leakage of the melt. Therefore, it is possible to process a sample 8 having a larger diameter than in the conventional method using the floating zone method.

【0025】また、図7は試料8の溶融部16と固体と
の固溶層境界面17の形状を示す図でこの場合はハロゲ
ンランプやキセノンランプによる照射の場合を示してい
る。光は試料8の表面にのみ入射して表面を加熱し次第
に内部に拡散して広がる。ほぼ試料8の半径に近い程度
の厚みまで溶融して、図に示すように固溶層境界面17
は山形になり溶融部16は下に垂れ落ち易い形状となる
FIG. 7 is a diagram showing the shape of the solid solution layer interface 17 between the molten part 16 and the solid of the sample 8, and this case shows the case of irradiation with a halogen lamp or a xenon lamp. The light is incident only on the surface of the sample 8, heats the surface, and gradually diffuses and spreads inside. It is melted to a thickness approximately close to the radius of sample 8, and the solid solution layer boundary surface 17 is formed as shown in the figure.
becomes mountain-shaped, and the molten portion 16 has a shape that tends to drip downward.

【0026】また、図8は同じく試料8の溶融部16と
固体との固溶層境界面17の形状を示す図で、この場合
は円盤型プラズマランプ2による照射の場合を示してい
る。光は試料8の内部に浸透するから内部に拡散して広
がる。試料8内部の温度勾配はほとんど無くなるから図
に示すように固溶層境界面17は水平かあるいはお椀状
になり溶融部16は下に垂れ落ち難い形状となる。従っ
て、試料8の直径が増大しても溶融部16が垂れ落ちる
事はなく浮遊帯域法で大結晶の成長が可能となる。
FIG. 8 is a diagram similarly showing the shape of the solid solution layer interface 17 between the molten part 16 and the solid of the sample 8, and in this case shows the case of irradiation with the disk-shaped plasma lamp 2. Since the light penetrates into the inside of the sample 8, it is diffused and spread inside. Since the temperature gradient inside the sample 8 is almost eliminated, the solid solution layer boundary surface 17 is horizontal or bowl-shaped as shown in the figure, and the molten part 16 has a shape that prevents it from dripping downward. Therefore, even if the diameter of the sample 8 increases, the molten part 16 will not drip down, making it possible to grow large crystals using the floating zone method.

【0027】実施例2.次に、別の発明の一実施例を図
9に示す。また、円盤型プラズマランプ2の周辺の構造
を図10に示す。図において10は楕円体鏡1の第1焦
点側にコップ状の電波遮蔽器の開放側周縁部を接触させ
て空胴共振器5を形成し、この内部に円盤型プラズマラ
ンプ2を置き、発光させる。この場合は、楕円体鏡1の
形状に関係なくランプの最適発光条件を維持できる。
Example 2. Next, another embodiment of the invention is shown in FIG. Further, the structure around the disk-shaped plasma lamp 2 is shown in FIG. In the figure, reference numeral 10 refers to a cavity resonator 5 which is formed by bringing the open side peripheral edge of a cup-shaped radio wave shield into contact with the first focus side of the ellipsoidal mirror 1, and a disk-shaped plasma lamp 2 is placed inside the cavity resonator 5, which emits light. let In this case, the optimum light emission conditions of the lamp can be maintained regardless of the shape of the ellipsoidal mirror 1.

【0028】実施例3.さらに別の発明の一実施例を図
11に示す。図において1は楕円体鏡、2はガラスや透
光性セラミックで出来た中空の楕円体である円盤型容器
の内部にカリュウム等の元素を封じ込みマイクロ波加熱
でプラズマ発光を行い光9を放出する円盤型プラズマラ
ンプ、3は熱伝導性の高いセラミックを棒状に加工して
作った支持具、4は円盤状の周縁を楕円体鏡1の内側に
接して取り付けられた電波遮蔽板、5は楕円体鏡1の端
部と電波遮蔽板4で形成されたマイクロ波の空胴共振器
、6は楕円体鏡1の端部に開けられた穴に取り付けられ
る導波管、7は導波管6の他端に取り付けられる高周波
発信器、8は楕円体鏡1の第2焦点において長軸上にに
設置した棒状の試料、14は導波管6と楕円体鏡1の接
点に開けられた窓である。15は支持具3を固着して楕
円体鏡1の端部で回転する回転具であり、電波透過性の
材料で構成される。この回転具15は試料8における集
光分布を円盤型プラズマランプ2の回転によって変化さ
せ、最適な分布を得るものである。
Example 3. Another embodiment of the invention is shown in FIG. In the figure, 1 is an ellipsoidal mirror, 2 is a hollow ellipsoid made of glass or translucent ceramic, and elements such as potassium are sealed inside the container, which generates plasma light by microwave heating and emits light 9. 3 is a support made by processing highly thermally conductive ceramic into a rod shape; 4 is a radio wave shielding plate attached with the periphery of the disk in contact with the inside of the ellipsoidal mirror 1; 5 is a A microwave cavity resonator is formed by the end of the ellipsoidal mirror 1 and the radio wave shielding plate 4, 6 is a waveguide attached to a hole made in the end of the ellipsoidal mirror 1, and 7 is a waveguide. A high-frequency transmitter is attached to the other end of 6, 8 is a rod-shaped sample placed on the long axis at the second focus of ellipsoidal mirror 1, and 14 is opened at the contact point of waveguide 6 and ellipsoidal mirror 1. It's a window. Reference numeral 15 denotes a rotating tool to which the supporter 3 is fixed and rotated at the end of the ellipsoidal mirror 1, and is made of a radio wave transparent material. This rotary tool 15 changes the focused distribution on the sample 8 by rotating the disc-shaped plasma lamp 2 to obtain an optimal distribution.

【0029】実施例4.次に、別の発明の一実施例を図
12に示す。また、試料8に集光する光の分布状況を図
13に示す。図において10は楕円体鏡1の第1焦点側
にコップ状の電波遮蔽器の開放側周縁部を接触させて空
胴共振器5を形成し、この内部に円盤型プラズマランプ
2を置き、発光させる。この場合は、楕円体鏡1の形状
に関係なくランプの最適発光条件を維持できる。図13
のように光は試料8の溶融部16にすべて集光しその周
囲に均一に照射される。従って、非常に集光効率が向上
するので、効率の良い加熱ができる。
Example 4. Next, another embodiment of the invention is shown in FIG. Further, the distribution of light condensed on the sample 8 is shown in FIG. In the figure, reference numeral 10 refers to a cavity resonator 5 which is formed by bringing the open side peripheral edge of a cup-shaped radio wave shield into contact with the first focus side of the ellipsoidal mirror 1, and a disk-shaped plasma lamp 2 is placed inside the cavity resonator 5, which emits light. let In this case, the optimum light emission conditions of the lamp can be maintained regardless of the shape of the ellipsoidal mirror 1. Figure 13
The light is all focused on the molten part 16 of the sample 8 and uniformly irradiated around it. Therefore, since the light collection efficiency is greatly improved, efficient heating can be achieved.

【0030】実施例5.さらに別の発明の一実施例を図
14に示す。図において1は楕円体鏡、2はガラスや透
光性セラミックで出来た中空の楕円体である円盤型容器
の内部にカリュウム等の元素を封じ込みマイクロ波加熱
でプラズマ発光を行い光9を放出する円盤型プラズマラ
ンプ、3は熱伝導性の高いセラミックを棒状に加工して
作った支持具、4は円盤状の周縁を楕円体鏡1の内側に
接して取り付けられた電波遮蔽板、5は楕円体鏡1の端
部と電波遮蔽板4で形成されたマイクロ波の空胴共振器
、6は楕円体鏡1の端部に開けられた穴に取り付けられ
る導波管、8は楕円体鏡1の第2焦点において短軸上に
に設置した棒状の試料、18は試料8を収納する円筒上
の石英管で作られる炉心管、19は炉心管18の上下に
取付けられた試料回転用のモータ、20は試料8を移動
する移動装置、21は試料8の温度を温度観測窓22を
通して計測する放射温度計であり、楕円体鏡1にあけら
れた穴から試料8を観測する。23は放射温度計21と
加熱電源に接続された制御計算機、25は加熱電源24
から電源を供給されて高周波を発信するマグネトロン、
26はガスを貯蔵するガスボンベ、27はバルブ、28
は流量調整器、29は真空ポンプである。26から29
の要素で雰囲気制御装置32が構成される。
Example 5. Another embodiment of the invention is shown in FIG. In the figure, 1 is an ellipsoidal mirror, 2 is a hollow ellipsoid made of glass or translucent ceramic, and elements such as potassium are sealed inside the container, which generates plasma light by microwave heating and emits light 9. 3 is a support made by processing highly thermally conductive ceramic into a rod shape; 4 is a radio wave shielding plate attached with the periphery of the disk in contact with the inside of the ellipsoidal mirror 1; 5 is a A microwave cavity resonator is formed by the end of the ellipsoidal mirror 1 and the radio wave shielding plate 4, 6 is a waveguide attached to a hole made in the end of the ellipsoidal mirror 1, and 8 is an ellipsoidal mirror. 1 is a rod-shaped sample placed on the short axis at the second focal point of 1, 18 is a furnace tube made of a cylindrical quartz tube that houses the sample 8, and 19 is a furnace tube for rotating the sample attached above and below the furnace core tube 18. A motor, 20 is a moving device for moving the sample 8, 21 is a radiation thermometer that measures the temperature of the sample 8 through a temperature observation window 22, and the sample 8 is observed through a hole made in the ellipsoidal mirror 1. 23 is a control computer connected to the radiation thermometer 21 and the heating power source, 25 is the heating power source 24
A magnetron, which is powered by a magnetron and emits high-frequency waves,
26 is a gas cylinder for storing gas, 27 is a valve, 28
is a flow rate regulator, and 29 is a vacuum pump. 26 to 29
The atmosphere control device 32 is composed of these elements.

【0031】この様に構成されているから、試料8を加
熱しながら、雰囲気を流量調整器28や真空ポンプ29
などで調整しモータ19で回転をあたえながら移動し結
晶の製造を行う。また、放射温度計21で試料8の温度
を温度観測窓22経由、0.9ミクロン付近の波長で計
測し温度を把握し一方加熱電源を制御計算機23で制御
してマグネトロン25の発信を制御し試料8の温度を希
望の値に制御する。この際に温度計測の誤差要因となる
試料8の表面の放射率の変化は簡単な放射率モニタを用
いれば相対値の補正が可能となる。
With this structure, while heating the sample 8, the atmosphere is controlled by the flow rate regulator 28 or the vacuum pump 29.
The crystals are manufactured by moving the crystals while rotating them with the motor 19. Further, the temperature of the sample 8 is measured with a radiation thermometer 21 via a temperature observation window 22 at a wavelength around 0.9 microns to grasp the temperature, and the heating power source is controlled by a control computer 23 to control the transmission of the magnetron 25. Control the temperature of sample 8 to a desired value. At this time, the change in emissivity on the surface of the sample 8, which is a cause of error in temperature measurement, can be corrected by using a simple emissivity monitor.

【0032】実施例6.次に、別の発明の一実施例を図
15に示す。図において10は楕円体鏡1の第1焦点側
にコップ状の電波遮蔽器10の開放側周縁部を接触させ
て空胴共振器5を形成し、この内部に円盤型プラズマラ
ンプ2を置き、発光させる。この場合は、楕円体鏡1の
形状に関係なくランプの最適発光条件を維持できる。
Example 6. Next, another embodiment of the invention is shown in FIG. In the figure, reference numeral 10 refers to a cavity resonator 5 which is formed by bringing the open side peripheral edge of a cup-shaped radio wave shield 10 into contact with the first focus side of the ellipsoidal mirror 1, and placing a disc-shaped plasma lamp 2 inside the cavity resonator 5. Make it emit light. In this case, the optimum light emission conditions of the lamp can be maintained regardless of the shape of the ellipsoidal mirror 1.

【0033】実施例7.さらに別の発明の一実施例を図
16に示す。図において1は楕円体鏡、2はガラスや透
光性セラミックで出来た中空の楕円体である円盤型容器
の内部にカリュウム等の元素を封じ込みマイクロ波加熱
でプラズマ発光を行い光9を放出する円盤型プラズマラ
ンプ、3は熱伝導性の高いセラミックを棒状に加工して
作った支持具、4は円盤状の周縁を楕円体鏡1の内側に
接して取り付けられた電波遮蔽板、5は楕円体鏡1の端
部と電波遮蔽板4で形成されたマイクロ波の空胴共振器
、6は楕円体鏡1の端部に開けられた穴に取り付けられ
る導波管、8は楕円体鏡1の第2焦点において長軸上に
に設置した棒状の試料、14は導波管6と楕円体鏡1の
接点に開けられた窓である。18は試料8を収納する円
筒上の石英管で作られる炉心管、19は炉心管18の端
部に取付けられた試料8回転用のモータ、20は試料8
を移動する移動装置、21は試料8の温度を温度観測窓
22を通して計測する放射温度計であり、楕円体鏡1に
あけられた穴から試料8を観測する。23は放射温度計
21と加熱電源に接続された制御計算機、25は加熱電
源24から電源を供給されて高周波を発信するマグネト
ロン、26はガスを貯蔵するガスボンベ、27はバルブ
、28は流量調整器、26から29の要素で雰囲気制御
装置32が構成される。
Example 7. Another embodiment of the invention is shown in FIG. In the figure, 1 is an ellipsoidal mirror, 2 is a hollow ellipsoid made of glass or translucent ceramic, and elements such as potassium are sealed inside the container, which generates plasma light by microwave heating and emits light 9. 3 is a support made by processing highly thermally conductive ceramic into a rod shape; 4 is a radio wave shielding plate attached with the periphery of the disk in contact with the inside of the ellipsoidal mirror 1; 5 is a A microwave cavity resonator is formed by the end of the ellipsoidal mirror 1 and the radio wave shielding plate 4, 6 is a waveguide attached to a hole made in the end of the ellipsoidal mirror 1, and 8 is an ellipsoidal mirror. A rod-shaped sample is placed on the long axis at the second focal point of 1, and 14 is a window opened at the contact point of the waveguide 6 and the ellipsoidal mirror 1. 18 is a furnace tube made of a cylindrical quartz tube that houses the sample 8, 19 is a motor for rotating the sample 8 attached to the end of the furnace core tube 18, and 20 is the sample 8
A moving device 21 is a radiation thermometer that measures the temperature of the sample 8 through a temperature observation window 22, and the sample 8 is observed through a hole made in the ellipsoidal mirror 1. 23 is a control computer connected to the radiation thermometer 21 and the heating power source; 25 is a magnetron that is supplied with power from the heating power source 24 and emits high frequency waves; 26 is a gas cylinder for storing gas; 27 is a valve; and 28 is a flow rate regulator. , 26 to 29 constitute the atmosphere control device 32.

【0034】この様に構成されているから、試料8を加
熱しながら、雰囲気を流量調整器28などで調整しモー
タ19で回転をあたえながら移動し結晶の製造を行う。 また、放射温度計21で試料8の温度を0.9ミクロン
付近の波長で計測し温度を把握し一方加熱電源を制御計
算機23で制御してマグネトロン25の発信を制御し試
料8の温度を希望の値に制御する。この際に温度計測の
誤差要因となる試料8の表面の放射率の変化は簡単な放
射率モニタを用いれば相対値の補正が可能となる。
With this structure, crystals are produced by heating the sample 8 while adjusting the atmosphere with the flow rate regulator 28 and moving it while being rotated by the motor 19. In addition, the radiation thermometer 21 measures the temperature of the sample 8 at a wavelength around 0.9 microns to determine the temperature, and the heating power source is controlled by the control computer 23 to control the transmission of the magnetron 25 to determine the temperature of the sample 8. control to the value of At this time, the change in emissivity on the surface of the sample 8, which is a cause of error in temperature measurement, can be corrected by using a simple emissivity monitor.

【0035】実施例8.次に、別の発明の一実施例を図
17に示す。図において10は楕円体鏡1の第1焦点側
にコップ状の電波遮蔽器の開放側周縁部を接触させて空
胴共振器5を形成し、この内部に円盤型プラズマランプ
2を置き、発光させる。この場合は、楕円体鏡1の形状
に関係なくランプの最適発光条件を維持できる。光は試
料8の溶融部16にすべて集光しその周囲に均一に照射
される。従って、非常に集光効率が向上するので、効率
の良い加熱ができる。
Example 8. Next, another embodiment of the invention is shown in FIG. In the figure, reference numeral 10 refers to a cavity resonator 5 which is formed by bringing the open side peripheral edge of a cup-shaped radio wave shield into contact with the first focus side of the ellipsoidal mirror 1, and a disk-shaped plasma lamp 2 is placed inside the cavity resonator 5, which emits light. let In this case, the optimum light emission conditions of the lamp can be maintained regardless of the shape of the ellipsoidal mirror 1. All of the light is focused on the molten part 16 of the sample 8 and uniformly irradiated around it. Therefore, since the light collection efficiency is greatly improved, efficient heating can be achieved.

【0036】図18は図17の構成を実際の円盤型プラ
ズマイメージ加熱装置に構成した場合の外観図で、図に
おいて31は試料8の溶融状態を目視で確認するための
スクリーン、32は試料8を交換するための試料操作用
扉で気密構造となる、32は雰囲気制御装置である。こ
の様に構成されるから例えばスペースシャトル等の宇宙
における微小重力実験にも供する事ができる。
FIG. 18 is an external view of the configuration shown in FIG. 17 in an actual disk-type plasma image heating apparatus. Reference numeral 32 designates an atmosphere control device, which has an airtight structure with a sample handling door for exchanging the sample. Since it is configured in this way, it can be used for microgravity experiments in space such as the space shuttle.

【0037】[0037]

【発明の効果】この発明は以上のように構成されている
から発光スペクトラムを紫外領域から赤外領域まで選択
できるので広範囲な試料8を加熱することが出来る。特
にガラスの吸収帯域の波長でイメージ加熱で融解できる
のでファイバケーブルの効率を飛躍的に向上させる純粋
な赤外ガラスの宇宙製造および地上製造に極めて有効で
ある。また、YIG等のレーザ用結晶の製造において2
センチ以上の大口径の結晶を浮遊溶融帯移動法で製造で
きるので従来の結晶の性能を飛躍的に高める事ができる
。すなわち、結晶の不純物が完全にコントロールされ結
晶の欠陥の無い大開口径のものができればレーザの高出
力化が可能となる。以上のように材料の製造の手段とし
て画期的な装置となり地上や宇宙において新材料の製造
に資する事ができる。
Since the present invention is constructed as described above, the emission spectrum can be selected from the ultraviolet region to the infrared region, so that a wide range of samples 8 can be heated. In particular, since it can be melted by image heating at wavelengths in the absorption band of glass, it is extremely effective for the space and terrestrial production of pure infrared glass, which dramatically improves the efficiency of fiber cables. In addition, in the production of laser crystals such as YIG, 2
Crystals with large diameters of centimeters or larger can be produced using the floating melt zone transfer method, making it possible to dramatically improve the performance of conventional crystals. In other words, if crystal impurities are completely controlled and a large aperture diameter free from crystal defects can be created, it will be possible to increase the output of the laser. As described above, this is an innovative device for producing materials, and can contribute to the production of new materials on the ground or in space.

【0038】また、以上のように、円盤型プラズマラン
プ2の発光形状が円盤型であるため円盤型プラズマラン
プ2の向きを回転させて試料8の温度勾配を急峻にした
り緩くしたり調節できるので、結晶成長に適した加熱領
域を選択することが出来る。従って、結晶にクラックの
無い高品質なものを得る事ができる。
Furthermore, as described above, since the light emitting shape of the disc-shaped plasma lamp 2 is disc-shaped, the temperature gradient of the sample 8 can be adjusted to be steeper or gentler by rotating the direction of the disc-shaped plasma lamp 2. , a heating region suitable for crystal growth can be selected. Therefore, high quality crystals without cracks can be obtained.

【0039】さらに、試料8を均一に加熱できるので回
転をあまり必要とせず低速回転で結晶成長が可能なため
溶液を温度に攪拌する必要がないので結晶成長に良い効
果を与える。特に微小重力における結晶の泡の除去が可
能となる。すなわち泡を熱勾配による対流で外側に移動
する事ができる。
Furthermore, since the sample 8 can be heated uniformly, there is no need for much rotation, and crystal growth is possible with low speed rotation, so there is no need to stir the solution to a temperature, which has a good effect on crystal growth. In particular, it becomes possible to remove crystal bubbles in microgravity. In other words, bubbles can be moved outward by convection due to thermal gradients.

【0040】さらに、無電極放電を利用するためランプ
の寿命が極めて長く10000時間以上可能なため従来
の100倍の長寿命の炉を提供できる事ができる。さら
に、ランプが小型軽量であり楕円体鏡も小型にできるの
で装置全体がコンパクトに構成できるので、宇宙におい
ては極めて重要な利点となる。
Furthermore, since electrodeless discharge is utilized, the life of the lamp is extremely long and can last for more than 10,000 hours, making it possible to provide a furnace with a life 100 times longer than conventional lamps. Furthermore, since the lamp is small and lightweight and the ellipsoidal mirror can be made small, the entire device can be constructed compactly, which is an extremely important advantage in space.

【0041】また、この発明に関わる別の発明において
は、空胴共振器をコップ状にしているため楕円体鏡の形
状や大きさに影響されず、同一の円盤型プラズマランプ
を様々な形状の楕円体鏡に対応させる事が出来る。また
、試料8に合わせて円盤型プラズマランプの形状や発光
スペクトラムを変えるための交換を容易に行うことがで
き材料の処理に非常に有効な手段となる。
Furthermore, in another invention related to this invention, since the cavity resonator is cup-shaped, it is not affected by the shape and size of the ellipsoidal mirror, and the same disc-shaped plasma lamp can be used in various shapes. It can be made compatible with ellipsoidal mirrors. In addition, the shape and emission spectrum of the disc-shaped plasma lamp can be easily changed to suit the sample 8, making it a very effective means for processing materials.

【0042】さらに、別の発明においては上記の効果に
加えて試料8を楕円体鏡の長軸上で移動するから高の集
光効率が良くまた、光の分布が極めて均一になるので、
結晶の欠陥を防止するのに役立つ。
Furthermore, in another invention, in addition to the above-mentioned effects, since the sample 8 is moved on the long axis of the ellipsoidal mirror, the light collection efficiency is high and the light distribution is extremely uniform.
Helps prevent crystal defects.

【0043】また、この発明に関わる別の発明において
は、上記の効果に加えて空胴共振器をコップ状にしてい
るため楕円体鏡の形状や大きさに影響されず、同一の円
盤型プラズマランプを様々な形状の楕円体鏡に対応させ
る事が出来る。また、試料8に合わせて円盤型プラズマ
ランプの形状や発光スペクトラムを変えるための交換を
容易に行うことができ材料の処理に非常に有効な手段と
なる。
Furthermore, in another invention related to this invention, in addition to the above-mentioned effects, since the cavity resonator is cup-shaped, it is not affected by the shape and size of the ellipsoidal mirror, and the same disk-shaped plasma can be generated. The lamp can be adapted to ellipsoidal mirrors of various shapes. In addition, the shape and emission spectrum of the disc-shaped plasma lamp can be easily changed to suit the sample 8, making it a very effective means for processing materials.

【0044】さらに、別の発明においては上記効果に加
えて試料8の温度を炉心管を経由して計測でき、試料8
の温度を把握できる。温度の変動を抑える事は結晶の欠
陥を防止する効果があるので品質の良い製造に効果があ
る。
Furthermore, in another invention, in addition to the above-mentioned effects, the temperature of the sample 8 can be measured via the reactor core tube.
temperature can be determined. Suppressing temperature fluctuations has the effect of preventing crystal defects and is therefore effective in producing high quality products.

【0045】また、この発明に関わる別の発明において
は、上記の効果に加えて空胴共振器をコップ状にしてい
るため楕円体鏡の形状や大きさに影響されず、同一の円
盤型プラズマランプを様々な形状の楕円体鏡に対応させ
る事が出来る。
Furthermore, in another invention related to this invention, in addition to the above-mentioned effects, since the cavity resonator is cup-shaped, it is not affected by the shape and size of the ellipsoidal mirror, and the same disk-shaped plasma can be generated. The lamp can be adapted to ellipsoidal mirrors of various shapes.

【0046】さらに、別の発明においては上記の効果に
加えて試料8の温度を均一にできるからさらに温度の変
動を抑える事は結晶の欠陥を防止する効果があるので品
質の良い製造に効果がある。
Furthermore, in another invention, in addition to the above-mentioned effects, the temperature of the sample 8 can be made uniform, and further suppressing temperature fluctuations has the effect of preventing crystal defects, which is effective in producing high quality products. be.

【0047】また、この発明に関わる別の発明において
は、上記の効果に加えて空胴共振器をコップ状にしてい
るため楕円体鏡の形状や大きさに影響されず、同一の円
盤型プラズマランプを様々な形状の楕円体鏡に対応させ
る事が出来る。
In addition to the above-mentioned effects, in another invention related to this invention, since the cavity resonator is cup-shaped, it is not affected by the shape and size of the ellipsoidal mirror, and the same disk-shaped plasma can be generated. The lamp can be adapted to ellipsoidal mirrors of various shapes.

【0048】なお、以上の説明においては円盤型プラズ
マランプの形状を円盤型に絞って説明したがこの形状は
球や円柱、卵型、楕円体、立方体、三角錐等の任意の形
状に設定できそれぞれの効果を発揮するものである。
[0048] In the above explanation, the shape of the disc-shaped plasma lamp was limited to a disc-shape, but this shape can be set to any shape such as a sphere, cylinder, oval, ellipsoid, cube, or triangular pyramid. Each has its own effect.

【図面の簡単な説明】[Brief explanation of drawings]

【図1】この発明の一実施例を示す断面図である。FIG. 1 is a sectional view showing an embodiment of the present invention.

【図2】円盤型プラズマランプの構成を説明する図であ
る。
FIG. 2 is a diagram illustrating the configuration of a disk-shaped plasma lamp.

【図3】試料の表面の光量分布の解析結果である。FIG. 3 is an analysis result of the light intensity distribution on the surface of the sample.

【図4】加熱実験のデータである。FIG. 4 is data from a heating experiment.

【図5】最高到達温度の解析結果である。FIG. 5 is an analysis result of the maximum temperature reached.

【図6】円盤型プラズマランプの発光スペクトラムを示
す図である。
FIG. 6 is a diagram showing the emission spectrum of a disc-shaped plasma lamp.

【図7】従来の浮遊溶融帯移動法の固溶層境界面の形状
を示す図である。
FIG. 7 is a diagram showing the shape of a solid solution layer boundary surface in a conventional floating melt zone movement method.

【図8】この発明の浮遊溶融帯移動法の固溶層境界面の
形状を示す図である。
FIG. 8 is a diagram showing the shape of a solid solution layer boundary surface in the floating melt zone movement method of the present invention.

【図9】別の発明の一実施例を示す断面図である。FIG. 9 is a sectional view showing another embodiment of the invention.

【図10】別の発明の円盤型プラズマランプの構成を説
明する図である。
FIG. 10 is a diagram illustrating the configuration of a disk-shaped plasma lamp according to another invention.

【図11】さらに別の発明の一実施例の構成図ブロック
図である。
FIG. 11 is a block diagram showing the configuration of yet another embodiment of the invention.

【図12】さらに別の発明の一実施例の構成図ブロック
図である。
FIG. 12 is a block diagram showing the configuration of yet another embodiment of the invention.

【図13】試料を長軸上に置いた場合の光の分布状況を
示す図である。
FIG. 13 is a diagram showing the distribution of light when the sample is placed on the long axis.

【図14】さらに別の発明の一実施例の構成図ブロック
図である。
FIG. 14 is a block diagram showing the configuration of yet another embodiment of the invention.

【図15】さらに別の発明の一実施例の構成図ブロック
図である。
FIG. 15 is a block diagram showing the configuration of yet another embodiment of the invention.

【図16】さらに別の発明の一実施例の構成図ブロック
図である。
FIG. 16 is a block diagram showing the configuration of yet another embodiment of the invention.

【図17】さらに別の発明の一実施例の構成図ブロック
図である。
FIG. 17 is a block diagram showing the configuration of yet another embodiment of the invention.

【図18】別の発明の一実施例の構成外観図である。FIG. 18 is a configuration external view of an embodiment of another invention.

【図19】従来の円盤型プラズマイメージ加熱装置の構
成図ブロック図である。
FIG. 19 is a block diagram showing the configuration of a conventional disk-type plasma image heating device.

【符号の説明】[Explanation of symbols]

1  楕円体鏡 2  円盤型プラズマランプ 3  支持具 4  電波遮蔽板 5  空胴共振器 6  導波管 7  高周波発信器 8  試料 9  光 10  コップ状電波遮蔽板 11  キセノンランプ 12  電源 13  ワイヤ 14  窓 15  回転具 16  溶融部 17  固溶層境界面 18  炉心管 19  モータ 20  移動装置 21  放射温度計 22  温度観測窓 23  制御計算機 24  加熱電源 25  マグネトロン 26  ガスボンベ 27  バルブ 28  流量調整器 29  真空ポンプ 30  スクリーン 31  試料操作用扉 32  雰囲気制御装置 1 Ellipsoidal mirror 2 Disc-shaped plasma lamp 3 Support equipment 4 Radio wave shielding plate 5 Cavity resonator 6 Waveguide 7 High frequency oscillator 8 Sample 9. Light 10 Cup-shaped radio wave shielding plate 11 xenon lamp 12 Power supply 13 Wire 14 Window 15 Rotating tool 16 Melting part 17 Solid solution layer interface 18 Furnace core tube 19 Motor 20 Mobile device 21 Radiation thermometer 22 Temperature observation window 23 Control computer 24 Heating power supply 25 Magnetron 26 Gas cylinder 27 Valve 28 Flow regulator 29 Vacuum pump 30 Screen 31 Sample operation door 32 Atmosphere control device

Claims (5)

【特許請求の範囲】[Claims] 【請求項1】  楕円体の反射面を内側に有し、その第
2焦点側端部において長軸を中心として設けられた1個
の試料挿入穴を有する楕円体鏡と、この楕円体鏡の第1
焦点に置かれた円盤型プラズマランプと、上記プラズマ
ランプを収納し、楕円体鏡の第1焦点側端部において、
その内面に取り付けられた電波遮蔽板で形成されたお椀
状の空胴共振器と、上記空胴共振器にマイクロ波電力を
注入する高周波発信器とを備えたことを特徴とする円盤
型プラズマイメージ加熱装置。
1. An ellipsoidal mirror having an ellipsoidal reflective surface inside and one sample insertion hole provided at its second focal point side end with the long axis as the center; 1st
a disk-shaped plasma lamp placed at the focal point, and a first focal point side end of the ellipsoidal mirror that houses the plasma lamp;
A disk-shaped plasma image characterized by comprising a bowl-shaped cavity resonator formed by a radio wave shielding plate attached to the inner surface, and a high-frequency oscillator that injects microwave power into the cavity resonator. heating device.
【請求項2】  楕円体の反射面を内側に有し、その第
2焦点側端部において長軸を中心として設けられた1個
の試料挿入穴を有する楕円体鏡と、この楕円体鏡の第1
焦点に置かれた円盤型プラズマランプと、上記プラズマ
ランプを収納し、楕円体鏡の第1焦点側端部において、
その内面に取り付けられたコップ状の電波遮蔽器で形成
された空胴共振器と、上記空胴共振器にマイクロ波電力
を注入する高周波発信器とを備えたことを特徴とする円
盤型プラズマイメージ加熱装置。
2. An ellipsoidal mirror having an ellipsoidal reflective surface on the inside and one sample insertion hole provided at the end on the second focal point side centered on the long axis; 1st
a disk-shaped plasma lamp placed at the focal point, and a first focal point side end of the ellipsoidal mirror that houses the plasma lamp;
A disk-shaped plasma image characterized by comprising a cavity resonator formed by a cup-shaped radio wave shield attached to the inner surface thereof, and a high-frequency oscillator that injects microwave power into the cavity resonator. heating device.
【請求項3】  長軸方向に試料挿入穴に挿入された試
料の端部で試料を把持し回転する回転装置と、この試料
を長軸方向に移動する移動装置と、試料を収納する炉心
管と、この炉心管に接続された雰囲気制御装置と、試料
に対向しておかれた放射温度計、この放射温度計と加熱
電源とが接続される制御装置とを備えたことを特徴とす
る請求項第1項又は第2項記載の円盤型プラズマイメー
ジ加熱装置。
3. A rotating device that grips and rotates the sample at the end of the sample inserted into the sample insertion hole in the longitudinal direction, a moving device that moves the sample in the longitudinal direction, and a reactor core tube that houses the sample. , an atmosphere control device connected to the reactor core tube, a radiation thermometer placed facing the sample, and a control device connected to the radiation thermometer and a heating power source. 3. The disc-shaped plasma image heating device according to item 1 or 2.
【請求項4】  楕円体の反射面を内側に有する楕円体
鏡と、この楕円体鏡の第1焦点に置かれた円盤型プラズ
マランプと、上記プラズマランプを収納し、楕円体鏡の
第1焦点側端部において、その内面に取り付けられた電
波遮蔽板で形成されたお椀状の空胴共振器と、上記空胴
共振器にマイクロ波電力を注入する高周波発信器とを備
え、上記楕円体鏡の第2焦点側端部において第2焦点を
通る長軸の垂線を中心としてあけられた2個の試料挿入
穴を有する円盤型プラズマイメージ加熱装置において、
短軸方向に試料挿入穴に挿入された試料の端部で試料を
把持し回転する回転装置と、この試料を短軸方向に移動
する移動装置と、試料を収納する炉心管と、この炉心管
に接続された雰囲気制御装置と、試料に対向しておかれ
た放射温度計、この放射温度計と加熱電源とが接続され
る制御装置とを備えたことを特徴とする円盤型プラズマ
イメージ加熱装置。
4. An ellipsoidal mirror having an ellipsoidal reflective surface inside, a disk-shaped plasma lamp placed at the first focal point of the ellipsoidal mirror, and a disk-shaped plasma lamp placed at the first focal point of the ellipsoidal mirror; The ellipsoid is provided with a bowl-shaped cavity resonator formed by a radio wave shielding plate attached to the inner surface thereof at the focal point side end, and a high frequency oscillator for injecting microwave power into the cavity resonator. In a disk-shaped plasma image heating device having two sample insertion holes formed at the second focal point side end of the mirror around a perpendicular to the long axis passing through the second focal point,
A rotating device that grips and rotates the sample at the end of the sample inserted into the sample insertion hole in the short axis direction, a moving device that moves the sample in the short axis direction, a reactor core tube that stores the sample, and this reactor core tube. A disk-shaped plasma image heating device characterized by comprising an atmosphere control device connected to the sample, a radiation thermometer placed facing the sample, and a control device connected to the radiation thermometer and a heating power source. .
【請求項5】  楕円体の反射面を内側に有する楕円体
鏡と、この楕円体鏡の第1焦点に置かれた円盤型プラズ
マランプと、上記プラズマランプを収納し、楕円体鏡の
第1焦点側端部において、その内面に取り付けられたコ
ップ状の電波遮蔽器で形成された空胴共振器と、上記空
胴共振器にマイクロ波電力を注入する高周波発信器とを
備え、上記楕円体鏡の第2焦点側端部において第2焦点
を通る長軸の垂線を中心としてあけられた2個の試料挿
入穴を有する円盤型プラズマイメージ加熱装置において
、短軸方向に試料挿入穴に挿入された試料の端部で試料
を把持し回転する回転装置と、この試料を短軸方向に移
動する移動装置と、試料を収納する炉心管と、この炉心
管に接続された雰囲気制御装置と、試料に対向しておか
れた放射温度計、この放射温度計と加熱電源とが接続さ
れる制御装置とを備えたことを特徴とする円盤型プラズ
マイメージ加熱装置。
5. An ellipsoidal mirror having an ellipsoidal reflective surface inside, a disk-shaped plasma lamp placed at the first focal point of the ellipsoidal mirror, and a disk-shaped plasma lamp that houses the plasma lamp and is located at the first focal point of the ellipsoidal mirror. The ellipsoid is provided with a cavity resonator formed of a cup-shaped radio wave shielder attached to the inner surface of the focal-side end, and a high-frequency oscillator for injecting microwave power into the cavity resonator. In a disk-type plasma image heating device having two sample insertion holes drilled at the second focal point side end of the mirror centered on a perpendicular line to the long axis passing through the second focal point, the sample insertion holes are inserted into the sample insertion holes in the short axis direction. A rotating device that grips and rotates the sample at the end of the sample, a moving device that moves the sample in the short axis direction, a reactor core tube that stores the sample, an atmosphere control device connected to the reactor core tube, 1. A disk-shaped plasma image heating device comprising: a radiation thermometer placed opposite to the heating source; and a control device to which the radiation thermometer and a heating power source are connected.
JP5474391A 1991-03-19 1991-03-19 Disc-shaped plasma image heater Pending JPH04292784A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5474391A JPH04292784A (en) 1991-03-19 1991-03-19 Disc-shaped plasma image heater

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5474391A JPH04292784A (en) 1991-03-19 1991-03-19 Disc-shaped plasma image heater

Publications (1)

Publication Number Publication Date
JPH04292784A true JPH04292784A (en) 1992-10-16

Family

ID=12979264

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5474391A Pending JPH04292784A (en) 1991-03-19 1991-03-19 Disc-shaped plasma image heater

Country Status (1)

Country Link
JP (1) JPH04292784A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011037640A (en) * 2009-08-06 2011-02-24 Canon Machinery Inc Apparatus and method for growing single crystal
WO2013164077A1 (en) * 2012-05-02 2013-11-07 Leibniz-Institut Für Festkörper- Und Werkstoffforschung Dresden E.V. Zone-melting device and method for modifying material structures by means of zone-melting
CN115638652A (en) * 2022-10-24 2023-01-24 赵翠婷 Rare earth concentrate microwave roasting device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011037640A (en) * 2009-08-06 2011-02-24 Canon Machinery Inc Apparatus and method for growing single crystal
WO2013164077A1 (en) * 2012-05-02 2013-11-07 Leibniz-Institut Für Festkörper- Und Werkstoffforschung Dresden E.V. Zone-melting device and method for modifying material structures by means of zone-melting
CN115638652A (en) * 2022-10-24 2023-01-24 赵翠婷 Rare earth concentrate microwave roasting device

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