JPH04293224A - Aligner - Google Patents

Aligner

Info

Publication number
JPH04293224A
JPH04293224A JP3058601A JP5860191A JPH04293224A JP H04293224 A JPH04293224 A JP H04293224A JP 3058601 A JP3058601 A JP 3058601A JP 5860191 A JP5860191 A JP 5860191A JP H04293224 A JPH04293224 A JP H04293224A
Authority
JP
Japan
Prior art keywords
semiconductor wafer
light irradiation
light
exposure
light source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3058601A
Other languages
Japanese (ja)
Inventor
Kiyohisa Tateyama
清久 立山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Tokyo Electron Kyushu Ltd
Original Assignee
Tokyo Electron Ltd
Tokyo Electron Kyushu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd, Tokyo Electron Kyushu Ltd filed Critical Tokyo Electron Ltd
Priority to JP3058601A priority Critical patent/JPH04293224A/en
Publication of JPH04293224A publication Critical patent/JPH04293224A/en
Pending legal-status Critical Current

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  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To obtain an aligner capable of simple alingment and effective exposure treatment in a short time without necessitating complicated driving mechanism or the like. CONSTITUTION:An aligner 1 is equipped with a substrate retainer 3 on the upper surface of which a semiconductor wafer 2 is mounted. Above the retainer 3, a light irradiation mechanism 4 is installed, in which a light irradiation surface 5 arranged so as to face the semiconductor wafer 2 is formed in a ring type having a linear part corresponding with an orientation flat, so as to conform with the shape of the semiconductor wafer 2. The light irradiation surface 5 is constituted of many optical fibers 7 arranged in a frame body 6, which fibers are bundled and led out as far as the vicinity of a light source 8.

Description

【発明の詳細な説明】[Detailed description of the invention]

【0001】[発明の目的][Object of the invention]

【0002】0002

【産業上の利用分野】本発明は、露光装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an exposure apparatus.

【0003】0003

【従来の技術】一般に、半導体デバイスの微細な回路パ
ターンは、フォトレジストを用いたフォトリソグラフィ
技術によって、半導体ウエハ等の基板上に形成されるが
、このような半導体ウエハ等の周縁部に形成されたフォ
トレジスト膜は、例えば半導体ウエハの搬送中に削り取
られ、塵埃となって周囲に飛散する虞がある。そこで、
半導体ウエハ等の周縁部のフォトレジスト膜を予め除去
しておくことが従来から行われている。
[Prior Art] Generally, fine circuit patterns of semiconductor devices are formed on a substrate such as a semiconductor wafer by photolithography technology using a photoresist. For example, the photoresist film may be scraped off during transportation of the semiconductor wafer and become dust and be scattered around. Therefore,
Conventionally, a photoresist film on the peripheral edge of a semiconductor wafer or the like is removed in advance.

【0004】すなわち、例えばスピンコーティング装置
等により、半導体ウエハにフォトレジストを塗布した後
、この半導体ウエハの周縁部に、光源からの光を選択的
に照射し、後工程の現像工程において半導体ウエハの周
縁部のフォトレジスト膜を現像して除去することが行わ
れている。
That is, after coating a semiconductor wafer with a photoresist using, for example, a spin coating device, the periphery of the semiconductor wafer is selectively irradiated with light from a light source, and the semiconductor wafer is coated in a subsequent development process. The photoresist film on the periphery is developed and removed.

【0005】このような半導体ウエハ等の周縁部のみを
露光する装置として、例えば半導体ウエハを回転させな
がらその周縁部にビーム状の光を照射する露光装置、半
導体ウエハの周縁部以外を覆うマスクを介して光源から
の光を照射する露光装置等が知られている。このような
露光装置は、例えば特開昭58−159535 号、特
開昭61−73330号、特開昭61−79227号、
特開昭61−137320 号公報等に開示されている
Examples of devices that expose only the peripheral edge of a semiconductor wafer include an exposure device that irradiates a beam of light onto the peripheral edge of the semiconductor wafer while rotating it, and a mask that covers areas other than the peripheral edge of the semiconductor wafer. Exposure apparatuses and the like that irradiate light from a light source through a light source are known. Such exposure apparatuses are disclosed in, for example, Japanese Patent Application Laid-Open Nos. 58-159535, 61-73330, 61-79227,
This is disclosed in Japanese Patent Application Laid-open No. 137320/1983.

【0006】[0006]

【発明が解決しようとする課題】しかしながら、一般に
半導体ウエハには、その周縁部の一部を直線状に切り欠
いたいわゆるオリエンテーションフラットが形成されて
いる。このため、上述した従来の露光装置のうち例えば
半導体ウエハを回転させながらその周縁部にビーム状の
光を照射する露光装置では、半導体ウエハを回転させて
円周上の露光を実施するとともに、例えば光照射部をオ
リエンテーションフラットに沿って直線的に移動させて
、オリエンテーションフラット部の露光を行わなければ
ならず、駆動機構が複雑になるという問題があった。 また、このような位置合わせが困難であり、例えば径の
異なる半導体ウエハを露光する場合等、装置の設定に時
間を要するという問題もあった。
However, semiconductor wafers generally have a so-called orientation flat formed by cutting out a portion of the periphery in a straight line. For this reason, among the above-mentioned conventional exposure apparatuses, for example, an exposure apparatus that irradiates a beam-shaped light onto the peripheral edge of a semiconductor wafer while rotating the semiconductor wafer rotates the semiconductor wafer and performs exposure on the circumference, for example. The light irradiation section must be moved linearly along the orientation flat to expose the orientation flat, which poses a problem in that the drive mechanism becomes complicated. Further, such alignment is difficult, and there is also the problem that it takes time to set up the apparatus, for example, when exposing semiconductor wafers of different diameters.

【0007】また、半導体ウエハの周縁部以外を覆うマ
スクを介して光源からの光を照射する露光装置では、光
源から照射される光の大部分がマスクに遮られるため、
実際の露光に関与する光が、光源から照射された光のご
く一部となり、効率が悪いという問題がある。
[0007] Furthermore, in an exposure apparatus that irradiates light from a light source through a mask that covers areas other than the peripheral edge of a semiconductor wafer, most of the light irradiated from the light source is blocked by the mask.
There is a problem in that the light involved in actual exposure is only a small portion of the light emitted from the light source, resulting in poor efficiency.

【0008】本発明は、かかる従来の事情に対処してな
されたもので、複雑な駆動機構等を必要とせず、かつ、
簡単に位置合せすることができ、短時間で効率良く露光
処理を行うことのできる露光装置を提供しようとするも
のである。
The present invention has been made in response to such conventional circumstances, and does not require a complicated drive mechanism, and
It is an object of the present invention to provide an exposure apparatus that can be easily aligned and can perform exposure processing efficiently in a short time.

【0009】[発明の構成][Configuration of the invention]

【0010】0010

【課題を解決するための手段】すなわち、本発明の露光
装置は、被露光基板の周縁部に、光源からの光を選択的
に照射して露光を行う露光装置において、前記被露光基
板の周縁部の露光域の形状に合せて多数の光ファイバー
を環状に配列した光照射機構を設けたことを特徴とする
[Means for Solving the Problems] That is, the exposure apparatus of the present invention is an exposure apparatus that performs exposure by selectively irradiating the peripheral edge of a substrate to be exposed with light from a light source. A light irradiation mechanism is provided in which a large number of optical fibers are arranged in a ring according to the shape of the exposure area of the area.

【0011】[0011]

【作  用】上記構成の本発明の露光装置では、被露光
基板の周縁部の露光域の形状に合わせて多数の光ファイ
バーを環状に配列した光照射機構を基板支持部に設けら
れた被露光基板の周縁部に向けて配置し、光源からの光
をこの光照射機構の光ファイバーによって導いて被露光
基板の周縁部に一括して照射する。
[Function] In the exposure apparatus of the present invention having the above configuration, a light irradiation mechanism in which a large number of optical fibers are arranged in a ring according to the shape of the exposure area at the peripheral edge of the exposed substrate is attached to the exposed substrate provided on the substrate support. The light from the light source is guided by the optical fiber of this light irradiation mechanism and irradiated all at once onto the peripheral edge of the exposed substrate.

【0012】したがって、例えばオリエンテーションフ
ラット部を照射するための複雑な駆動機構等を必要とせ
ず、周縁部の露光域と光照射機構とを簡単に位置合せす
ることができる。また、光源からの光を光ファイバーに
よって露光部に導くことにより、光を効率良く使用する
ことができる。このため、短時間で効率良く露光処理を
行うことができる。
[0012] Therefore, for example, there is no need for a complicated drive mechanism for irradiating the orientation flat portion, and the exposure area of the peripheral portion and the light irradiation mechanism can be easily aligned. Furthermore, by guiding the light from the light source to the exposure section through an optical fiber, the light can be used efficiently. Therefore, exposure processing can be performed efficiently in a short time.

【0013】[0013]

【実施例】以下、本発明を半導体ウエハの周縁部に露光
を行う露光装置に適用した一実施例を図面を参照して説
明する。
DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment in which the present invention is applied to an exposure apparatus for exposing the peripheral edge of a semiconductor wafer will be described below with reference to the drawings.

【0014】図1に示すように、露光装置1は、上面に
被露光基板である半導体ウエハ2が載置される基板支持
部3を備えており、基板支持部3の上部には光照射機構
4が設けられている。
As shown in FIG. 1, the exposure apparatus 1 includes a substrate support section 3 on which a semiconductor wafer 2, which is a substrate to be exposed, is placed. 4 are provided.

【0015】上記半導体ウエハ2は、図2に示すように
、円板状に形成されており、その端部を直線状に切り欠
く如くオリエンテーションフラット2aが設けられてい
る。光照射機構4は、半導体ウエハ2に対向する如く配
置される光照射面5が、この半導体ウエハ2の周縁部の
露光域の形状に合せて、円弧部およびオリエンテーショ
ンフラット2aに対応する直線部を有し、幅が例えば2
mm 程度の環状形状に形成されている。この光照射面
5は、枠体6内に配列された直径例えば数ミクロン乃至
数十ミクロンの多数の光ファイバー7によって構成され
ており、これらの光ファイバー7は、一または複数に束
ねられ、その他端は、光源8の近傍まで導出されている
As shown in FIG. 2, the semiconductor wafer 2 is formed in the shape of a disk, and an orientation flat 2a is provided at the end of the disk so as to be cut out in a straight line. The light irradiation mechanism 4 has a light irradiation surface 5 disposed so as to face the semiconductor wafer 2, which forms an arcuate portion and a straight portion corresponding to the orientation flat 2a in accordance with the shape of the exposure area at the peripheral edge of the semiconductor wafer 2. and the width is e.g. 2
It is formed into an annular shape of about mm. This light irradiation surface 5 is constituted by a large number of optical fibers 7 having a diameter of, for example, several microns to several tens of microns, arranged in a frame 6. These optical fibers 7 are bundled into one or more, and the other end is , are led out to the vicinity of the light source 8.

【0016】なお、基板支持部3あるいは光照射機構4
は、図示しない上下動機構等を備えており、これらの間
の間隔を変更可能に構成されている。これは、基板支持
部3上に半導体ウエハ2をロード・アンロードするため
の間隔を設けるため、および露光時に半導体ウエハ2表
面と光照射機構4の光照射面5との間隔を所望の間隔に
設定するためである。
Note that the substrate support section 3 or the light irradiation mechanism 4
is equipped with a vertical movement mechanism (not shown), etc., and is configured to be able to change the interval between them. This is done in order to provide an interval for loading and unloading the semiconductor wafer 2 on the substrate support part 3, and to maintain a desired interval between the surface of the semiconductor wafer 2 and the light irradiation surface 5 of the light irradiation mechanism 4 during exposure. This is for setting.

【0017】上記構成のこの実施例の露光装置1では、
予め基板支持部3を下降あるいは光照射機構4を上昇さ
せ、基板支持部3と光照射機構4との間に所定の間隔を
設けておく。そして、この状態で、例えばスピンコーテ
ィング装置等で表面にフォトレジスト膜を形成した半導
体ウエハ2を、自動搬送あるいはマニュアル操作により
、半導体ウエハ2の露光部と光照射機構4の光照射域が
一致する如く予め半導体ウエハ2を位置決めして基板支
持部3上に載置する。
In the exposure apparatus 1 of this embodiment having the above configuration,
The substrate support 3 is lowered or the light irradiation mechanism 4 is raised in advance to provide a predetermined distance between the substrate support 3 and the light irradiation mechanism 4. In this state, the semiconductor wafer 2 with a photoresist film formed on its surface using, for example, a spin coating device is automatically transported or manually operated so that the exposed area of the semiconductor wafer 2 and the light irradiation area of the light irradiation mechanism 4 coincide with each other. The semiconductor wafer 2 is positioned in advance and placed on the substrate support 3 as shown in FIG.

【0018】この後、基板支持部3を上昇あるいは光照
射機構4を下降させ、基板支持部3と光照射機構4との
間を所望の露光間隔に設定し、例えば図示しないシャッ
タ機構を開閉することにより、光源8の光を光ファイバ
ー7内に導入し、光ファイバー7によってこの光を導き
、光照射面5から半導体ウエハ2の周縁部に所定時間照
射して露光処理を行う。
After that, the substrate support 3 is raised or the light irradiation mechanism 4 is lowered, a desired exposure interval is set between the substrate support 3 and the light irradiation mechanism 4, and, for example, a shutter mechanism (not shown) is opened or closed. As a result, the light from the light source 8 is introduced into the optical fiber 7, guided by the optical fiber 7, and irradiated from the light irradiation surface 5 onto the peripheral edge of the semiconductor wafer 2 for a predetermined period of time to perform exposure processing.

【0019】なお、この時、急激に強い光を半導体ウエ
ハ2表面のフォトレジスト膜に照射すると、フォトレジ
スト膜の剥離等が生じやすいので、例えば徐々に照射光
の強度を上げるようにすれば、フォトレジスト膜の剥離
等を防止することができる。このような照射光の強度の
制御は、例えば、光源8と光ファイバー7との間に絞り
機構を設けその開口面積を制御すること、光源8に供給
する電力を制御すること等によって実現することができ
る。
At this time, if the photoresist film on the surface of the semiconductor wafer 2 is irradiated with sudden strong light, peeling of the photoresist film is likely to occur, so for example, if the intensity of the irradiated light is gradually increased, Peeling of the photoresist film can be prevented. Such control of the intensity of the irradiated light can be achieved, for example, by providing an aperture mechanism between the light source 8 and the optical fiber 7 and controlling the aperture area thereof, by controlling the electric power supplied to the light source 8, etc. can.

【0020】そして、露光処理が終了すると、基板支持
部3を下降あるいは光照射機構4を上昇させ、基板支持
部3と光照射機構4との間に所定の間隔を設けて、基板
支持部3上の露光処理が終了した半導体ウエハ2をアン
ロードする。
When the exposure process is completed, the substrate support 3 is lowered or the light irradiation mechanism 4 is raised, a predetermined distance is provided between the substrate support 3 and the light irradiation mechanism 4, and the substrate support 3 is lowered. The semiconductor wafer 2 on which the above exposure process has been completed is unloaded.

【0021】このように、本実施例の露光装置1では、
多数の光ファイバー7を配列した光照射機構4によって
光源8の光を導き、基板支持部3に設けられた半導体ウ
エハ2の周縁部に向けて選択的に一括して照射する。
As described above, in the exposure apparatus 1 of this embodiment,
The light from the light source 8 is guided by the light irradiation mechanism 4 in which a large number of optical fibers 7 are arranged, and is selectively irradiated all at once toward the peripheral edge of the semiconductor wafer 2 provided on the substrate support section 3 .

【0022】したがって、例えば半導体ウエハ2のオリ
エンテーションフラット部2aを照射するための複雑な
駆動機構等を必要とせず、また、回転、水平方向移動の
ための駆動機構等がないため、半導体ウエハ2と光照射
機構4との位置合せを簡単に行うことができる。また、
光源8からの光を光ファイバー7によって露光部分に導
くことにより、例えばマスク等を用いた従来の露光装置
に較べて光源8からの光を効率良く使用することができ
る。このため、短時間で効率良く露光処理を行うことが
できる。
Therefore, for example, there is no need for a complicated drive mechanism for irradiating the orientation flat portion 2a of the semiconductor wafer 2, and since there is no drive mechanism for rotation or horizontal movement, the semiconductor wafer 2 and Positioning with the light irradiation mechanism 4 can be easily performed. Also,
By guiding the light from the light source 8 to the exposed portion through the optical fiber 7, the light from the light source 8 can be used more efficiently than, for example, a conventional exposure apparatus using a mask or the like. Therefore, exposure processing can be performed efficiently in a short time.

【0023】図3は他の実施例の露光装置の要部構成を
示すもので、この実施例では、径の異なる半導体ウエハ
2に対応するため、例えば8 インチ用の光照射面5a
、6 インチ用の光照射面5b、5 インチ用の光照射
面5cが同心円上に配列される如く形成されている。こ
のように各径の半導体ウエハ2に対応した光照射面5a
、5b、5cを設けておき、切り替えて光を照射するよ
うにすれば、径の異なる半導体ウエハ2に対しても、迅
速に対応することができる。
FIG. 3 shows the configuration of main parts of an exposure apparatus according to another embodiment. In this embodiment, in order to accommodate semiconductor wafers 2 of different diameters, a light irradiation surface 5a for, for example, 8 inches is used.
, a 6-inch light irradiation surface 5b, and a 5-inch light irradiation surface 5c are arranged concentrically. In this way, the light irradiation surface 5a corresponds to the semiconductor wafer 2 of each diameter.
, 5b, and 5c are provided and are switched to irradiate light, it is possible to quickly respond to semiconductor wafers 2 having different diameters.

【0024】[0024]

【発明の効果】以上説明したように、本発明の露光装置
によれば、複雑な駆動機構等を必要とせず、かつ、簡単
に露光域と光照射機構との位置合せをすることができ、
短時間で効率良く露光処理を行うことができる。
As explained above, according to the exposure apparatus of the present invention, the exposure area and the light irradiation mechanism can be easily aligned without requiring a complicated drive mechanism, etc.
Exposure processing can be performed efficiently in a short time.

【図面の簡単な説明】[Brief explanation of drawings]

【図1】本発明の一実施例の露光装置の縦断面の構成を
示す図である。
FIG. 1 is a diagram showing a longitudinal cross-sectional configuration of an exposure apparatus according to an embodiment of the present invention.

【図2】図1の露光装置の平面の構成を示す図である。FIG. 2 is a diagram showing a planar configuration of the exposure apparatus in FIG. 1;

【図3】他の実施例の露光装置の要部構成を示す図であ
る。
FIG. 3 is a diagram showing a main part configuration of an exposure apparatus according to another embodiment.

【符号の説明】[Explanation of symbols]

1  露光装置 2  半導体ウエハ 3  基板支持部 4  光照射機構 5  光照射面 6  枠体 7  光ファイバー 8  光源 1 Exposure device 2 Semiconductor wafer 3 Board support part 4 Light irradiation mechanism 5 Light irradiation surface 6 Frame body 7 Optical fiber 8 Light source

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】  被露光基板の周縁部に、光源からの光
を照射して露光を行う露光装置において、前記被露光基
板の周縁部の露光域の形状に合せて多数の光ファイバー
を環状に配列した光照射機構を設けたことを特徴とする
露光装置。
1. An exposure apparatus that performs exposure by irradiating a peripheral portion of a substrate to be exposed with light from a light source, wherein a large number of optical fibers are arranged in a ring shape according to the shape of an exposure area of the peripheral portion of the substrate to be exposed. An exposure apparatus characterized by being provided with a light irradiation mechanism.
JP3058601A 1991-03-22 1991-03-22 Aligner Pending JPH04293224A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3058601A JPH04293224A (en) 1991-03-22 1991-03-22 Aligner

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3058601A JPH04293224A (en) 1991-03-22 1991-03-22 Aligner

Publications (1)

Publication Number Publication Date
JPH04293224A true JPH04293224A (en) 1992-10-16

Family

ID=13089036

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3058601A Pending JPH04293224A (en) 1991-03-22 1991-03-22 Aligner

Country Status (1)

Country Link
JP (1) JPH04293224A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100434826B1 (en) * 1996-02-05 2004-09-13 우시오덴키 가부시키가이샤 Wafer peripheral exposure method and apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100434826B1 (en) * 1996-02-05 2004-09-13 우시오덴키 가부시키가이샤 Wafer peripheral exposure method and apparatus

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