JPH04294009A - Electric contact material - Google Patents

Electric contact material

Info

Publication number
JPH04294009A
JPH04294009A JP3059004A JP5900491A JPH04294009A JP H04294009 A JPH04294009 A JP H04294009A JP 3059004 A JP3059004 A JP 3059004A JP 5900491 A JP5900491 A JP 5900491A JP H04294009 A JPH04294009 A JP H04294009A
Authority
JP
Japan
Prior art keywords
alloy
layer
nickel
gold
contact material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3059004A
Other languages
Japanese (ja)
Inventor
Taketoshi Kaimasu
貝 増 武 俊
Tamio Oi
大 井 民 男
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Aisin Corp
Original Assignee
Aisin Seiki Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Aisin Seiki Co Ltd filed Critical Aisin Seiki Co Ltd
Priority to JP3059004A priority Critical patent/JPH04294009A/en
Publication of JPH04294009A publication Critical patent/JPH04294009A/en
Pending legal-status Critical Current

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  • Manufacture Of Switches (AREA)
  • Contacts (AREA)

Abstract

PURPOSE:To reduce a trouble such as a condition fault to the utmost by an electric contact material able to reduce local cell action caused by pin-holes and flaws of gold plating while making it hard to generate an insulator such as hydroxide and hydrate. CONSTITUTION:An electric contact material consists of a first layer 1 which is an electric contact substrate, a second layer 2 where by one of an amorphous alloy, chrome a chrome alloy, tungsten, a tungsten alloy, titanium, a titanium alloy, nickel, a nickel alloy cobalt, a cobalt alloy is selected, a third layer 3 consisting of nickel or a nickel alloy and a fourth layer 4 consisting gold or a gold alloy.

Description

【発明の詳細な説明】[Detailed description of the invention]

【0001】0001

【産業上の利用分野】本発明は、スイツチ、コネクタ端
子、電極等の電気接点材料に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to electrical contact materials for switches, connector terminals, electrodes, etc.

【0002】0002

【従来の技術】従来、この種の電気接点材料の技術とし
ては、特開昭61  29021号公報がある。この技
術は母材上に高耐食性のある非晶質合金層を設け、その
上に金メツキをほどこしている2層構造である。
2. Description of the Related Art Conventionally, the technology for this type of electrical contact material is disclosed in Japanese Patent Application Laid-Open No. 61-29021. This technology has a two-layer structure in which a highly corrosion-resistant amorphous alloy layer is provided on the base material, and gold plating is applied on top of that.

【0003】0003

【発明が解決しようとする課題】しかしながら、この技
術においては、最表面の金の標準電位は約+1.5Vで
あり、又非晶質合金は結晶合金に比べ、標準電位が低く
、例えばニツケルとニツケル非晶質であるニツケル、リ
ンの場合、標準電位は前者では、−0.25V、後者で
は、−0.27〜−0.3Vであり、最表層の金との電
位差が大きくなり(  気圧の、水素電極電位を標準と
する)、局部電池を作りやすく、腐食の進行を促進させ
、金のピンホールより、湿気中では水酸化物、水和物を
作りやすくしており、不導通等の故障の原因となる可能
性が高い。この技術は最表面メツキとその下の金属との
電位差の問題として考慮していなく、いくら高耐食性の
金属を金メツキの下地に使用しても、金メツキのピンホ
ール、キズから水酸化物、水和物を作りやすい性質をも
つてしまうという問題点を有していた。
[Problems to be Solved by the Invention] However, in this technology, the standard potential of gold on the outermost surface is approximately +1.5V, and the standard potential of amorphous alloys is lower than that of crystalline alloys. In the case of nickel and phosphorus, which are amorphous, the standard potential is -0.25V for the former, and -0.27 to -0.3V for the latter, and the potential difference with the outermost layer of gold is large (atmospheric pressure). (standard hydrogen electrode potential), makes it easy to create local batteries, accelerates corrosion, makes it easier to create hydroxides and hydrates in moisture than gold pinholes, and causes non-conductivity, etc. There is a high possibility that it will cause a malfunction. This technology does not take into account the problem of potential difference between the outermost surface plating and the underlying metal, and no matter how highly corrosion-resistant metal is used as the base for gold plating, hydroxides can form from pinholes and scratches in the gold plating. The problem is that it tends to form hydrates.

【0004】これは、いいかえると、上記の各層には、
必ず、微細なピンホールとよばれる穴が存在してしまう
が、電気接点の故障の大きな原因として、母材が黄銅の
場合、ピンホール、及びキズから母材中の亜鉛酸化物が
優先的に表面に上昇し、これが導通不良につながつてい
るということである。
[0004] In other words, in each of the above layers,
There are always holes called minute pinholes, but when the base material is brass, zinc oxide in the base metal is prioritized from pinholes and scratches, which is a major cause of electrical contact failure. This means that it rises to the surface, leading to poor conduction.

【0005】本発明は上記の問題点を解決するものであ
つて、金メツキのピンホール、キズによりできる局部電
池作用を小さくすることができ、水酸化物、水和物の様
な絶縁物の生成ができにくくするもので、導通不良の様
な故障を極力少なくした電気接点材料を提供するもので
ある。
The present invention solves the above-mentioned problems, and can reduce the local battery effect caused by pinholes and scratches in gold plating, and can reduce the local battery effect caused by pinholes and scratches in gold plating. The purpose of the present invention is to provide an electrical contact material that minimizes failures such as poor conduction.

【0006】[0006]

【課題を解決するための手段】上記目的を達成するため
の技術的手段は、電気接点基板である第1の層と、非晶
質合金、クロム、クロム合金、タングステン、タングス
テン合金、チタン、チタン合金、ニツケル、ニツケル合
金、コバルト、コバルト合金のうちからいずれか一つ選
ばれた第2の層と、ニツケルあるいはニツケル合金から
なる第3の層と、金あるいは金合金からなる第4の層か
らなる電気接点材料からなり、好ましくは、前記第3の
層がニツケル−スズ合金、あるいはニツケル−パラジウ
ム合金のうちからいずれか一つ選ばれたニツケル合金か
らなる電気接点材料である。
[Means for Solving the Problems] Technical means for achieving the above object include a first layer that is an electrical contact substrate, an amorphous alloy, chromium, chromium alloy, tungsten, tungsten alloy, titanium, titanium a second layer selected from one of alloy, nickel, nickel alloy, cobalt, and cobalt alloy; a third layer made of nickel or nickel alloy; and a fourth layer made of gold or gold alloy. Preferably, the third layer is made of a nickel alloy selected from a nickel-tin alloy or a nickel-palladium alloy.

【0007】[0007]

【実施例】以下本発明の実施例について図1を参考にし
て説明する。
[Embodiment] An embodiment of the present invention will be described below with reference to FIG.

【0008】第1の層1は電気接点基板であり、通常は
銅又は銅合金が多く使用されているが、金属、非金属い
ずれでも使用される。第2の層2は非晶質合金、クロム
、クロム合金、タングステン、タングステン合金、チタ
ン、チタン合金、ニツケル、ニツケル合金、コバルト、
コバルト合金系等の耐食性、耐摩耗性のある金属を用い
る。この第2の層2は、母材の防食、拡散防止、及び耐
摩耗性の作用を有するものである。第3の層3は最表面
にある第4の層4の金メツキとの標準電位差の小さいも
のがよく、ニツケル合金、例えば、ニツケル−スズ合金
、あるいはニツケル−パラジウム合金を用いる。第4の
層4は0.01μm〜2(3)μmの薄い金又は金合金
材料からなる。この層は耐食性及び低接触抵抗にするた
めの目的のものである。摺動性摩耗が激しい場合には、
金にコバルトを入れ耐摺動性摩耗性をもたせることが可
能となる。
[0008] The first layer 1 is an electrical contact substrate, and usually copper or a copper alloy is often used, but either metal or non-metal can be used. The second layer 2 is made of amorphous alloy, chromium, chromium alloy, tungsten, tungsten alloy, titanium, titanium alloy, nickel, nickel alloy, cobalt,
Use a metal with corrosion resistance and wear resistance, such as a cobalt alloy. This second layer 2 has functions of preventing corrosion of the base material, preventing diffusion, and providing wear resistance. The third layer 3 preferably has a small standard potential difference with respect to the gold plating of the fourth layer 4 on the outermost surface, and is made of a nickel alloy, such as a nickel-tin alloy or a nickel-palladium alloy. The fourth layer 4 consists of a thin gold or gold alloy material of 0.01 μm to 2(3) μm. This layer is intended for corrosion resistance and low contact resistance. If sliding wear is severe,
It is possible to add cobalt to gold to give it sliding and abrasion resistance.

【0009】各層の作成方法はスパツタ法、真空蒸着法
、イオンプレーテイング法、CVD法、メツキ法等があ
るが、量産性、コストメリツトの点からメツキ法が好ま
しい。なお、各2〜4層は厚さ0.01μm〜5μmの
範囲の薄膜からなる。
Methods for forming each layer include the sputtering method, vacuum evaporation method, ion plating method, CVD method, plating method, etc., but the plating method is preferable from the viewpoint of mass production and cost merit. Note that each of the 2 to 4 layers consists of a thin film having a thickness in the range of 0.01 μm to 5 μm.

【0010】本発明から構成される電気接点材料を使用
した結果、電位差を小さく抑えることができるため、金
メツキのピンホール、キズによりできる局部電池作用を
小さくすることができ、水酸化物、水和物の様な絶縁物
の生成ができにくくなり、従来の電気接点材料と比較し
て、導通不良の様な故障を極力少なくできた。
[0010] As a result of using the electrical contact material of the present invention, the potential difference can be suppressed to a small level, so the local battery effect caused by pinholes and scratches in gold plating can be reduced, and hydroxide and water This makes it difficult to form insulators such as Japanese-style materials, making it possible to minimize failures such as poor continuity compared to conventional electrical contact materials.

【0011】[0011]

【発明の効果】以上のとおり、本発明は、最表面層の金
メツキと接する下地メツキをニツケル−スズあるいはニ
ツケル−パラジウム合金としたため、電位差を小さく抑
えることができるため、金メツキのピンホール、キズに
よりできる局部電池作用を小さくすることができ、水酸
化物、水和物の様な絶縁物の生成ができにくくするもの
で、導通不良の様な故障を極力少なくした電気接点材料
である。
As described above, the present invention uses a nickel-tin or nickel-palladium alloy as the base plating in contact with the gold plating on the outermost layer, so that the potential difference can be suppressed to a small level. It is an electrical contact material that can reduce the local battery effect caused by scratches and prevent the formation of insulators such as hydroxides and hydrates, thereby minimizing failures such as poor continuity.

【図面の簡単な説明】[Brief explanation of the drawing]

【図1】本発明の各層からなる電気接点材料の断面図。FIG. 1 is a cross-sectional view of an electrical contact material consisting of each layer of the present invention.

【符号の説明】[Explanation of symbols]

1  第1層 2  第2層 3  第3層 4  第4層 1 First layer 2 Second layer 3 3rd layer 4 4th layer

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】  電気接点基板である第1の層と、非晶
質合金、クロム、クロム合金、タングステン、タングス
テン合金、チタン、チタン合金、ニツケル、ニツケル合
金、コバルト、コバルト合金のうちからいずれか一つ選
ばれた第2の層と、ニツケルあるいはニツケル合金から
なる第3の層と、金あるいは金合金からなる第4の層か
らなる電気接点材料。
1. A first layer that is an electrical contact substrate; and any one of amorphous alloy, chromium, chromium alloy, tungsten, tungsten alloy, titanium, titanium alloy, nickel, nickel alloy, cobalt, and cobalt alloy. An electrical contact material comprising a selected second layer, a third layer made of nickel or a nickel alloy, and a fourth layer made of gold or a gold alloy.
【請求項2】  前記第3の層がニツケル−スズ合金、
あるいはニツケル−パラジウム合金のうちからいずれか
一つ選ばれたニツケル合金からなることを特徴とする請
求項1記載の電気接点材料。
2. The third layer is a nickel-tin alloy,
The electrical contact material according to claim 1, characterized in that it is made of a nickel alloy selected from among nickel and palladium alloys.
JP3059004A 1991-03-22 1991-03-22 Electric contact material Pending JPH04294009A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3059004A JPH04294009A (en) 1991-03-22 1991-03-22 Electric contact material

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3059004A JPH04294009A (en) 1991-03-22 1991-03-22 Electric contact material

Publications (1)

Publication Number Publication Date
JPH04294009A true JPH04294009A (en) 1992-10-19

Family

ID=13100710

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3059004A Pending JPH04294009A (en) 1991-03-22 1991-03-22 Electric contact material

Country Status (1)

Country Link
JP (1) JPH04294009A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0773769A (en) * 1993-09-03 1995-03-17 Ngk Spark Plug Co Ltd External connection terminal of semiconductor package and manufacturing method thereof
WO2018123380A1 (en) * 2016-12-28 2018-07-05 デンカ株式会社 Heat dissipation component for semiconductor element

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS644071A (en) * 1987-06-26 1989-01-09 Nippon Telegraph & Telephone Thin film transistor and manufacture thereof
JPH02260460A (en) * 1989-03-31 1990-10-23 Casio Comput Co Ltd thin film transistor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS644071A (en) * 1987-06-26 1989-01-09 Nippon Telegraph & Telephone Thin film transistor and manufacture thereof
JPH02260460A (en) * 1989-03-31 1990-10-23 Casio Comput Co Ltd thin film transistor

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0773769A (en) * 1993-09-03 1995-03-17 Ngk Spark Plug Co Ltd External connection terminal of semiconductor package and manufacturing method thereof
US5583379A (en) * 1993-09-03 1996-12-10 Ngk Spark Plug Co., Ltd. Outer lead for a semiconductor IC package having individually annealed plated layers
US5668060A (en) * 1993-09-03 1997-09-16 Ngk Spark Plug Co., Ltd. Outer lead for a semiconductor IC package and a method of fabricating the same
WO2018123380A1 (en) * 2016-12-28 2018-07-05 デンカ株式会社 Heat dissipation component for semiconductor element
JPWO2018123380A1 (en) * 2016-12-28 2019-11-21 デンカ株式会社 Heat dissipation parts for semiconductor elements
US10541189B2 (en) 2016-12-28 2020-01-21 Denka Company Limited Heat dissipation component for semiconductor element

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