JPH04299544A - Manufacture of film carrier semiconductor device - Google Patents

Abstract

PURPOSE:To join leads on a film carrier tape to the electrode terminals of a semiconductor chip by melting solder projections by a reflow method while the film carrier tape is put on the semiconductor chip and the solder projections are inserted into through holes. CONSTITUTION:A film carrier tape 6b provided with leads 4b having through holes 13b at their front end sections is put on a semiconductor chip 2b provided with electrode terminals 15b. Then the leads 4b are jointed to the terminals 15b by a reflow method while solder balls are inserted into the holes 13b. Therefore, the work can be simplified and the reliability can be improved, since bumps can be easily formed and inner bonding can be performed by the reflow method.

Description

[Detailed description of the invention]

0001

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing film carrier semiconductor devices.

0002

2. Description of the Related Art A conventional method for manufacturing a film carrier semiconductor device will be described. As shown in FIGS. 4(a) and 4(b), a metal foil such as copper is bonded onto an insulating film such as polyimide that has a sprocket hole 1a for transportation and positioning and a device hole 3a which is an opening for the semiconductor chip 2a. A film carrier tape 6a on which leads 4a in a desired shape and pads 5a for electrical selection are formed by etching metal foil, and a semiconductor chip 2a on which bumps 7a, which are metal protrusions, have been provided on electrode terminals in advance. Next, the leads 4a of the film carrier tape and the bumps 7a of the semiconductor chip are bonded by inner lead bonding (hereinafter referred to as ILB) by a thermocompression bonding method or a eutectic method, etc., and the film carrier tape is connected onto the electrical selection pad 5a. Conduct electrical screening and bias tests by bringing the child into contact with the target. Here, in order to prevent deformation of the lead 4a, suspenders 8a, which are frames of an insulating film, are provided in advance on the film carrier tape, and in order to improve reliability and mechanical protection, resin 9a is potted and resin-sealed as shown in FIG. In some cases, this is done. When mounting such a film carrier semiconductor device, the leads 4a are cut to a desired length, and then, as shown in FIG. 6, after fixing the semiconductor chip 2a to a printed circuit board 11a with adhesive 10a,
This can be carried out by outer lead bonding (hereinafter referred to as OLB) to the bonding pad 12a on the printed circuit board.

These film carrier semiconductor devices have advantages such as high speed because bonding can be done at once regardless of the number of leads, and easy automation of work because a film carrier tape is used. .

0004

[Problems to be Solved by the Invention] The method for manufacturing the film carrier semiconductor device described above requires the formation of bumps on the electrode terminals of the semiconductor chip, and the cost of forming the bumps, which is carried out mainly by electrolytic plating in the wafer state, is high. It has the disadvantage of being high. Several bump forming methods have been introduced to solve this problem. For example, solid
Solid State Technology
Technology), Japanese version, 1978, 11
The bumped film carrier tape (hereinafter referred to as B tape) introduced in the monthly issue, etc., National Technical
Report (National Technical
Report), Volume 31, No. 3, 1985, 6
Transfer bump introduced in the month, etc., JP-A-54-266
There are methods of using metal balls as bumps in wire bonding (hereinafter referred to as ball bumps), which are disclosed in Japanese Patent Application Laid-open No. 60-19543 and the like.

Among these tapes, B tape is a film carrier tape in which the lead ends are half-etched while the other lead parts are left unetched and the remaining convex lead ends are used as bumps. It is necessary to pattern and etch each side of the metal foil for half-etching a portion, which is generally done with a single layer film carrier of metal foil only. Therefore, each lead is electrically connected, which has the disadvantage that electrical selection in the film carrier tape state is difficult. To solve this problem, it is possible to similarly form bumps on the leads formed on the conventional insulating film, but this has the disadvantage of complicating the process and increasing costs.

Transfer bumps are a method in which bumps are formed on a substrate such as glass by electrolytic plating, and the leads of a film carrier tape are bonded to transfer the bumps from the substrate to the leads. This method has many advantages in terms of cost compared to the conventional method of forming bumps on a wafer because it requires bonding to form bumps and transfer them to leads, but it is not perfect. Ball bumps are made by bonding only the metal balls formed during thermocompression wire bonding onto the electrode terminals of a semiconductor chip. Since thermal and mechanical stress is repeatedly applied to the electrode terminals of the semiconductor chip, the electrode terminal portions are easily destroyed, resulting in poor reliability.

[0007]

[Means for Solving the Problems] A method for manufacturing a film carrier semiconductor device of the present invention includes a plurality of leads arranged around a predetermined area in the center with their tips facing, and a through hole provided at the tips of the leads. A film carrier tape having a hole and a semiconductor chip having an electrode terminal corresponding to the through hole are prepared, the semiconductor chips of the film carrier tape are stacked, and a solder protrusion is inserted into the through hole, and the protrusion is made by reflowing. By melting the film carrier tape, the leads on the film carrier tape and the electrode terminals of the semiconductor chip are joined.

[0008]

Embodiments Next, embodiments of the present invention will be described with reference to the drawings.

FIG. 1(a) is a plan view of a film carrier semiconductor device according to a first embodiment of the present invention, and FIG. 1(b) is a sectional view taken along the line X--X in FIG. 1(a). Also, Figures 2(a) to (
c) is a step-by-step sectional view for explaining the manufacturing method of the first embodiment.

The film carrier tape 6b is provided with a sprocket hole 1b, a lead 4b of a desired shape, and an electrical selection pad 5b. A through hole 13b as large as the electrode terminal 15b of the semiconductor chip 2b is provided at the tip of the lead 4a on the film carrier tape 6b, and the side surface of the through hole 13b and the lead 4b on the film carrier tape are electrically connected by plating. It is electrically conductive.

First, as shown in FIG. 2(a), such a film carrier tape and the semiconductor chip 2b are aligned and stacked. The semiconductor chip 2b has an electrode terminal 15b.
is provided, but no bump is provided.

Next, as shown in FIG. 2(b), a solder protrusion 16b is formed in the concave space created by the through hole and the electrode terminal by the ball bump method, which leaves only the metal ball in crimp wire bonding. Then, by putting it into a reflow oven and melting the solder, it is shown in Figure 2 (
As shown in c), the through hole on the film carrier tape and the electrode terminal are ILBed with a solder member 14b.

[0013] In this embodiment, by soldering the through holes and the electrode terminals of the chip using the reflow method, the conventional IL
ILB by thermocompression bonding method or eutectic method using B bonder
The advantage of this method is that it saves a lot of work, and because bumps can be easily formed by applying wire bonding, the cost is lower than when bumps are formed using the conventional plating method on a wafer. In addition, the conventional method of crimping metal balls to the electrode terminals of a semiconductor chip applies thermal and mechanical stress to the electrode terminals of the semiconductor chip twice: when forming the bumps and when bonding the leads of the film carrier tape to the bumps. In contrast,
In the present invention, since bonding is performed only once during bump formation, damage to the electrode portion can be significantly reduced, resulting in excellent reliability.

FIG. 3(a) shows a second embodiment of the present invention.
This will be explained with reference to (c).

As in the previous example, first, as shown in FIG. 3(a), a film carrier 6 is prepared which is provided with a sprocket hole, a lead of a desired shape, and an electrical selection pad.
Prepare c. Also, a through hole 13c having a size similar to the electrode terminal of a semiconductor chip is provided at the tip of the lead, and the side surface of the through hole is electrically connected to the lead on the film carrier tape by plating.

The electrode terminals 15c of the semiconductor chip are formed in advance in a wafer state according to a method in which only solder protrusions 16c and metal balls in crimp wire bonding are left. That is, it is sufficient to bond the solder wire and leave it as a solder ball (16c). After aligning the through hole 13c on the film carrier tape 6c and the solder ball 16c on the electrode terminal 15c of the semiconductor chip 2c, and inserting the solder ball into the through hole 13c as shown in FIG. 3(b), By melting the solder in a reflow oven,
As shown in (c), the through holes of the film carrier tape and the electrode terminals are ILBed.

In this embodiment, by forming solder balls in the wafer state, it is possible to reduce costs by shortening the working time, and by eliminating defects when forming solder bumps, it is possible to reduce costs by reducing the number of film carrier tapes used. There are advantages.

[0018]

[Effects of the Invention] As explained above, the method for manufacturing a film carrier semiconductor device of the present invention uses a conventional ILB bonder to solder bond the through holes on the film carrier and the electrode terminals of the semiconductor chip by the reflow method. , the ILB process consisting of thermocompression bonding or eutectic method can be omitted, and bumps can be easily formed by applying wire bonding, so the cost is lower than when bumps are formed by plating in the conventional wafer state. This has the effect of making it cheaper.

In addition, the conventional method of crimping metal balls to the electrode terminals of a semiconductor chip applies thermal and mechanical stress to the electrodes of the semiconductor chip twice: when forming the bumps and when bonding the leads of the film carrier tape to the bumps. In contrast, in the present invention, the through holes and electrode terminals are bonded by a reflow method, so bonding only needs to be done once during bump formation, which significantly reduces damage to the electrode parts and improves reliability. It also has the effect of being excellent.

[Brief explanation of drawings]

FIG. 1 is a plan view (FIG. 1(a)) and a cross-sectional view (FIG. 1(a)) of a film carrier semiconductor device according to a first embodiment of the present invention.
(b)).

[Fig. 2] (a) to 2 for explaining the first embodiment of the present invention;
FIG. 6(c) is a step-by-step cross-sectional view shown separately in FIG.

FIG. 3 (a) to 3 for explaining the second embodiment of the present invention;
FIG. 6(c) is a step-by-step cross-sectional view shown separately in FIG.

FIG. 4 is a plan view (FIG. 4(a)) and a cross-sectional view (FIG. 4(a)) of a film carrier semiconductor device used to explain the prior art;
b)).

FIG. 5 is a cross-sectional view used to explain the prior art.

FIG. 6 is a sectional view used to explain the prior art.

[Explanation of symbols]

1a, 1b Sprocket hole 2a, 2b, 2
c Semiconductor chip 3a Device holes 4a, 4b, 4c Leads 5a, 5b Electrical selection pads 6a, 6b, 6c Film carrier tape 7a
Bump 8a Suspender 9a Resin 10a Adhesive 11a Printed circuit board 12a Bonding pads 13b, 13c Through holes 14b, 14c Solder members 15b, 15c Electrode terminals 16b, 16c Solder ball

Claims (2)

[Claims] 1. A film carrier tape comprising a plurality of leads arranged around a predetermined area in the center with their tips facing toward each other, a through hole provided at the tip of the lead, and an electrode terminal corresponding to the through hole. The leads on the film carrier tape and the semiconductor are prepared by stacking the semiconductor chips on the film carrier tape and inserting solder protrusions into the through holes and melting the protrusions by reflow. A method for manufacturing a film carrier semiconductor device, which comprises bonding a chip to an electrode terminal. 2. The method of manufacturing a film carrier semiconductor device according to claim 1, wherein the solder wire is bonded to the electrode terminal, and the solder ball is left as a projection.