JPH0430532A - Structure and manufacture of projecting electrode bump - Google Patents
Structure and manufacture of projecting electrode bumpInfo
- Publication number
- JPH0430532A JPH0430532A JP2137765A JP13776590A JPH0430532A JP H0430532 A JPH0430532 A JP H0430532A JP 2137765 A JP2137765 A JP 2137765A JP 13776590 A JP13776590 A JP 13776590A JP H0430532 A JPH0430532 A JP H0430532A
- Authority
- JP
- Japan
- Prior art keywords
- protruding electrode
- electrode bump
- adhesive
- semiconductor device
- bump
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/072—Connecting or disconnecting of bump connectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
- H10W74/15—Encapsulations, e.g. protective coatings characterised by their shape or disposition on active surfaces of flip-chip devices, e.g. underfills
Landscapes
- Wire Bonding (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、半導体装置の実装構造に係り、特にその突起
状電極バンプの構造及びその製法に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a mounting structure for a semiconductor device, and particularly to a structure of a protruding electrode bump and a method for manufacturing the same.
［従来の技術］
第７図及び第８図は、従来の半導体装置の実装構造を示
すもので、半導体装置１を、その半導体装置１と基板２
上の導体リード３間を、金属材料（Ｎｉ、Ａ１等）から
なる導電性粒子４を含んだ異方性導電接着剤５により接
合して実装したものである。[Prior Art] FIGS. 7 and 8 show the mounting structure of a conventional semiconductor device.
The upper conductor leads 3 are bonded together using an anisotropic conductive adhesive 5 containing conductive particles 4 made of a metal material (Ni, Al, etc.).
半導体装置ｌは、パッド部に突起状接続電極（バンプ）
６が形成されたいわゆるフリップチンブで、基板２上に
フェースダウンポンディング実装され加圧及び加熱する
ことにより、第８図に示すように、突起状電極バンプ６
と基板２上の導体リード３間で、異方性導電接着剤５中
に混在された導電性粒子４がつふれて、突起状電極バン
プ６と基板２上の導体リード３と接触し、電気的接続が
とられるように構成されたものである。The semiconductor device l has a protruding connection electrode (bump) on the pad portion.
6 is formed on the substrate 2 by face-down bonding, and by applying pressure and heating, the protruding electrode bumps 6 are formed as shown in FIG.
The conductive particles 4 mixed in the anisotropic conductive adhesive 5 are crushed between the conductive leads 3 on the substrate 2 and the protruding electrode bumps 6 and the conductive leads 3 on the substrate 2, and electricity is generated. It is constructed so that a physical connection can be made.
〔発明が解決しようとする課！ｌ！］
ところで、このように構成された従来の半導体装置１の
実装構造においては、異方性導電接着剤５中に導電性粒
子４を均一には混ぜれず、このため突起状電極バンプ６
と導体リード３の間に介在する導電性粒子４の数が一定
とはならず、接続抵抗が増えたり、導電性粒子４が全く
存在しないために電気的導通がとれずに断線不良となる
という欠点があった。この問題は突起状電極バンプ６の
サイズが極小であったり、回路パターン３が微細ピッチ
である場合には、特に顕著であった。[The problem that the invention tries to solve! l! ] By the way, in the conventional mounting structure of the semiconductor device 1 configured as described above, the conductive particles 4 are not mixed uniformly in the anisotropic conductive adhesive 5, and therefore the protruding electrode bumps 6
The number of conductive particles 4 interposed between the conductor lead 3 and the conductor lead 3 is not constant, resulting in an increase in connection resistance, and the absence of any conductive particles 4 may result in disconnection due to lack of electrical continuity. There were drawbacks. This problem was particularly noticeable when the size of the protruding electrode bumps 6 was extremely small or when the circuit pattern 3 had a fine pitch.
この欠点を解消する方法として、電力性導電接着剤５中
の導電性粒子４の数を増加させることが考えられるが、
この場合は接着剤自体の含有率が低下し、接着強度が低
下する。さらには、導電性粒子４の密度が高くなること
によって、導体リード３間又は突起状電極バンプ６間で
の短絡不良が発生するという恐れがあった。As a way to eliminate this drawback, it is possible to increase the number of conductive particles 4 in the electrically conductive adhesive 5.
In this case, the content of the adhesive itself decreases, and the adhesive strength decreases. Furthermore, as the density of the conductive particles 4 increases, there is a fear that a short circuit between the conductor leads 3 or between the protruding electrode bumps 6 may occur.
また、別の方法として、導電性粒子４をファイングレー
ド（極小サイズ）とし、突起状電極バンプ６と導体リー
ド３の間に導電性粒子４が存在する確率を高くすること
も考えられるが、やはり、異方性導電接着側５中に導電
性粒子４を均一には混ぜれず、さらには、ファイングレ
ードの導電性粒子４を均一な大きさで製造することは非
常に困難であった。Alternatively, it is possible to make the conductive particles 4 of fine grade (very small size) to increase the probability that the conductive particles 4 exist between the protruding electrode bumps 6 and the conductor leads 3. However, it was not possible to uniformly mix the conductive particles 4 in the anisotropic conductive adhesive side 5, and furthermore, it was very difficult to manufacture fine grade conductive particles 4 with a uniform size.
本発明は、前記背景に鑑みてなされたものであり、その
目的とするところは、製法が容易で、導電リードや突起
状電極バンプが微小であっても、フェースダウンポンデ
ィング時の電気的接続が確実にとれる突起状電極バンプ
の構造及びその製造方法を提供することにある。The present invention has been made in view of the above-mentioned background, and its purpose is to provide an easy-to-manufacture method and to provide electrical connections during face-down bonding even when the conductive leads and protruding electrode bumps are minute. It is an object of the present invention to provide a structure of a protruding electrode bump that can be reliably obtained and a method for manufacturing the same.
上記課題を解決するため本発明は、半導体装置１を、基
板２上の導体リード３にフェースダウンポンディング実
装し、突起状電極バンプ６を介在させて電気的接続が採
られる半導体装置１における突起状電極バンプ６の構造
において、前記突起状電極バンプ６の半導体装置１側先
端に、接着剤による接着層７を形成し、該接着層７に金
属材料からなり、球状で略同一径を有する導電性粒子４
を、均一に付着させたことを特徴とするものである。In order to solve the above-mentioned problems, the present invention mounts a semiconductor device 1 on a conductor lead 3 on a substrate 2 by face-down bonding, and provides a protrusion in the semiconductor device 1 with which an electrical connection is established by interposing a protruding electrode bump 6. In the structure of the shaped electrode bump 6, an adhesive layer 7 made of adhesive is formed at the tip of the protruding electrode bump 6 on the side of the semiconductor device 1, and the adhesive layer 7 is made of a metal material and is spherical and has a conductive material having approximately the same diameter. sexual particle 4
is characterized in that it is uniformly deposited.
また、前記突起状電極バンプ６の製法において、前記接
着剤を磁化させて接着層７を形成し、該接着層７上に同
様に磁化された金属材料からなる球状の導電性粒子４を
その磁力により付着させ、接着剤の硬化後に消磁して製
造されることを特徴とするものである。In the method for manufacturing the protruding electrode bump 6, the adhesive layer 7 is formed by magnetizing the adhesive, and the spherical conductive particles 4 made of a similarly magnetized metal material are placed on the adhesive layer 7 by the magnetic force. It is characterized in that it is manufactured by attaching the adhesive using a method of adhesive and demagnetizing it after the adhesive has hardened.
さらには、金属材料からなる球状の導電性粒子４それぞ
れを、常温では粘着力の少ない接着剤でつつんで導電性
粒子４の外側に均一な接着層７を形成し、該導電性粒子
４をスクリーン８を用いて突起状電極バンプ６先端に一
層に並べ、加熱することにより接着硬化させて製造され
ることを特徴とするものである。Furthermore, each of the spherical conductive particles 4 made of a metal material is wrapped with an adhesive having low adhesive strength at room temperature to form a uniform adhesive layer 7 on the outside of the conductive particles 4, and the conductive particles 4 are screened. 8 are arranged in a single layer at the tips of the protruding electrode bumps 6, and the adhesive is cured by heating.
〔作用］
上記のように本発明においては、導電性金属粒子４を突
起状１ｉ極バンプ６の先端のみに接着させたため、導体
リード３間又は突起状電極バンプ６間の短絡がなくなり
、また、突起状電極バンプ６と導体リード３の間に介在
する導電性金属粒子４の数を、一定にかつ増加させるこ
とができ、これにより断線不良がなくなり接続が安定す
るため、接続抵抗が減少し、高速度で動作する半導体装
置１を搭載することができる。また、導電性金属粒子４
を、形状が球状で同一の径を有するものとしたため、突
起状電極バンプ６の高さを一定とでき、フェースダウン
ポンディング時の接続が安定する。また、請求項２及び
３に係る製法によれば、本発明の構造の突起状電極バン
プが容易に製造できる。[Function] As described above, in the present invention, since the conductive metal particles 4 are bonded only to the tips of the protruding electrode bumps 6, there is no short circuit between the conductor leads 3 or between the protruding electrode bumps 6, and The number of conductive metal particles 4 interposed between the protruding electrode bump 6 and the conductor lead 3 can be kept constant and increased, which eliminates disconnection defects and stabilizes the connection, reducing connection resistance. A semiconductor device 1 that operates at high speed can be mounted. In addition, conductive metal particles 4
Since the electrode bumps 6 are spherical in shape and have the same diameter, the height of the protruding electrode bump 6 can be kept constant, and the connection during face-down bonding is stable. Further, according to the manufacturing methods according to claims 2 and 3, the protruding electrode bump having the structure of the present invention can be easily manufactured.
第１図及び第２図は、本発明の第１の実施例を示すもの
である。半導体装置１が実装される基板２は、プラスチ
ック系又はセラミック系であり、その片面に導体リード
３を有し、その導体リード３の一端には、金、銀、銅、
インジウム、ニッケル等の導電性金属材料からなる突起
状電極バンプ６が設けられている。その突起状電極バン
プ６の半導体装置ｌ実装側先端には、硬化後の硬度が低
いエポキシ系やシリコン系等の樹脂からなる接着剤７が
塗布されており、その上に金属材料からなる球状で、略
同一径を有する導電性粒子４が均一に付着されて構成さ
れたものである。なお、基板２はリードフレームやフィ
ルム状のもので構成されたのもであっても良い。1 and 2 show a first embodiment of the present invention. The substrate 2 on which the semiconductor device 1 is mounted is made of plastic or ceramic and has a conductor lead 3 on one side, and one end of the conductor lead 3 is coated with gold, silver, copper,
Protruding electrode bumps 6 made of a conductive metal material such as indium or nickel are provided. An adhesive 7 made of resin such as epoxy or silicone, which has low hardness after curing, is applied to the tip of the protruding electrode bump 6 on the side where the semiconductor device is mounted. , conductive particles 4 having approximately the same diameter are uniformly attached. Note that the substrate 2 may be formed of a lead frame or a film.
第２図は、本実施例の製造工程を示すもので、まず、基
板２上の導体リード３の先端部分に突起状の電極バンプ
６を形成する。この方法としては、電解メツキをする方
法や、ワイヤボンディングを行いワイヤ部分を切断する
方法等があり、特に微細ピッチで突起状電極バンプ６を
形成する場合には、ポジ又はネガレジストを用い、紫外
線照射で窓あけを行い、電解メツキをする方法が採られ
る０次に、突起状電極バンプ６の先端にスクリーン印刷
等により均一な厚さの接着剤を塗布し接着層７を形成す
る（同図（ａｌ参照）。なおここで、接着剤として熱硬
化性の樹脂を用いた場合は、液状でかつチクソ性の高い
ものを使用するか、ある程度仮硬化（完全硬化ではない
）させておき、粘度をあげておく。その後、パレット９
等に導電性金属粒子４を均一に隙間なく並べ、この上か
ら接着層７を有する突起状電極バンプ６を押しつけて、
導電性金属粒子４の一部分が接着層７に埋め込まれるよ
うにして導電性金属粒子４を接着する（同図ｂ）参照）
。FIG. 2 shows the manufacturing process of this embodiment. First, a protruding electrode bump 6 is formed at the tip of the conductor lead 3 on the substrate 2. As shown in FIG. Examples of this method include electrolytic plating, wire bonding and cutting the wire portion, etc. In particular, when forming protruding electrode bumps 6 at a fine pitch, use a positive or negative resist and use ultraviolet light. A method is adopted in which a window is opened by irradiation and electrolytically plated. Next, an adhesive layer 7 of uniform thickness is applied to the tip of the protruding electrode bump 6 by screen printing or the like to form an adhesive layer 7. (Refer to al.) If a thermosetting resin is used as the adhesive, it should be liquid and have high thixotropy, or it should be temporarily cured (not completely cured) to a certain extent so that the viscosity After that, select Palette 9.
Conductive metal particles 4 are arranged uniformly without gaps, and a protruding electrode bump 6 having an adhesive layer 7 is pressed onto the conductive metal particles 4.
The conductive metal particles 4 are bonded so that a portion of the conductive metal particles 4 is embedded in the adhesive layer 7 (see b) in the same figure).
.
このように製造された突起状電極バンプ６に、半導体装
Ｉｌｌの電極パッドを対向させて、半導体装置ｌをフェ
ースダウンボンディングしく同図（Ｃ）参照）、加熱及
び加重を行い、これらを接合させる。この時、加圧によ
り、導電性金属粒子４が接着層７に押し込まれ、半導体
装置ｌの電極パνドと突起状電極バンプ６の双方に接触
し、それらの間でつぶれて電気的導通を確保し、また、
同時に加熱により接着剤７を硬化させ、その収縮力によ
り固定させて前記接触状態を維持させる。最後に、半導
体装置１の耐湿性向上と接合性の向上（機械的衝撃に強
くする）ために、半導体装置１と基板２の間に、樹脂１
０等を充填して封止を行う。The electrode pads of the semiconductor device Ill are placed opposite to the protruding electrode bumps 6 manufactured in this way, and the semiconductor device I is bonded by face-down bonding (see figure (C)) and heated and loaded. . At this time, the conductive metal particles 4 are pushed into the adhesive layer 7 by pressure, come into contact with both the electrode pads and the protruding electrode bumps 6 of the semiconductor device 1, and are crushed between them to establish electrical continuity. ensure and also
At the same time, the adhesive 7 is cured by heating and fixed by its contractile force to maintain the contact state. Finally, in order to improve the moisture resistance and bondability of the semiconductor device 1 (to make it strong against mechanical shock), a resin layer is placed between the semiconductor device 1 and the substrate 2.
Fill with 0 etc. and seal.
なお、この樹脂１０による封止は、本発明に特に必要な
ものではなく、封止しなくても良く、またキャップ等で
覆ったものでも良い。Note that sealing with this resin 10 is not particularly necessary for the present invention, and it is not necessary to seal it, or it may be covered with a cap or the like.
このような構成にしたことにより、導電性金属粒子４を
突起状電極バンプ６の先端のみに接着させたため、導体
リード３間又は突起状電極バンプ６間の短絡がなくなり
、これにより、導体リード３ピツチや突起状電極バンプ
６をせばめることができ、また、突起状電極バンプ６と
導体リード３の間に介在する導電性金属粒子４の数を一
定にかつ増加させることができるため断線不良が防げ、
突起状電極バンプ６や導体リード３の大きさを小さくす
ることができ、基板２上での高密度実装が可能で小型化
が図れる。また、接続抵抗が減少するため高速度で動作
する半導体装置１を搭載することができる。さらには、
導電性金属粒子４を形状が球状で同一の径を存するもの
としたため、突起状電極バンプ６の高さを一定とでき、
フェースダウンボンディング時の接続が安定する。また
、導電性金属粒子４を介して電気的接続をとるため、半
導体装置ｌと基板２の熱膨張率の差による熱的応力の吸
収ができ、基板２として安価で製造し易い材料が使用で
きる。With this configuration, since the conductive metal particles 4 are bonded only to the tips of the protruding electrode bumps 6, there is no short circuit between the conductor leads 3 or between the protruding electrode bumps 6. Since the pitch and protruding electrode bumps 6 can be narrowed, and the number of conductive metal particles 4 interposed between the protruding electrode bumps 6 and the conductor leads 3 can be kept constant and increased, disconnection defects can be prevented. Prevent,
The sizes of the protruding electrode bumps 6 and the conductor leads 3 can be reduced, allowing high-density mounting on the substrate 2 and miniaturization. Furthermore, since the connection resistance is reduced, it is possible to mount the semiconductor device 1 that operates at high speed. Furthermore,
Since the conductive metal particles 4 are spherical in shape and have the same diameter, the height of the protruding electrode bumps 6 can be kept constant;
Stable connection during face-down bonding. Furthermore, since electrical connection is established through the conductive metal particles 4, thermal stress due to the difference in thermal expansion coefficient between the semiconductor device 1 and the substrate 2 can be absorbed, and a material that is inexpensive and easy to manufacture can be used as the substrate 2. .
第３図及び第４図は、本発明の第２の実施例を示すもの
である。前記第１の実施例と異なる点は、接着剤及び導
電性金属粒子４であり、他は前記第１の実施例と同様で
ある。3 and 4 show a second embodiment of the invention. The difference from the first embodiment is the adhesive and the conductive metal particles 4, and the other points are the same as the first embodiment.
第４図において接着剤は、磁性体（Ｆｅ、Ｎｉ等の金属
粉末）を含有したエポキシ系、シリコン系等の樹脂を用
い、これを磁化させて後、突起状電極バンプ６に塗布し
て接着層７を形成する（同図（ａ）参照）０次に、パレ
ット９等に磁化された磁性体を含有した導電性金属粒子
４を均一に隙間なく並べ、この上から接着層７を有する
突起状電極バンプ６を近づけてその磁力により導電性金
属粒子４を接着剤７の表面に付着させる（同図ｂ）参照
）。吸着後は導電性金属粒子４は接着剤により保持され
るため、それらの消磁を行って製造する。In FIG. 4, the adhesive is an epoxy resin, silicon resin, etc. containing a magnetic substance (metal powder such as Fe, Ni, etc.), and after magnetizing it, it is applied to the protruding electrode bump 6 and bonded. Forming layer 7 (see figure (a)) Next, conductive metal particles 4 containing a magnetized magnetic material are arranged uniformly without any gaps on a pallet 9 or the like, and a protrusion having an adhesive layer 7 is formed on the pallet 9. The conductive metal particles 4 are caused to adhere to the surface of the adhesive 7 by the magnetic force of the shaped electrode bumps 6 (see FIG. 2B)). Since the conductive metal particles 4 are held by the adhesive after adsorption, they are demagnetized for manufacturing.
このように製造された突起状電極バンプ６に、半導体装
置１を前記第１の実施例と同様にフェースダウンボンデ
ィングする（同図（Ｃ）、（ｄ）参照）。The semiconductor device 1 is face-down bonded to the protruding electrode bumps 6 manufactured in this manner in the same manner as in the first embodiment (see FIGS. 3(C) and 4(d)).
このような構成においても、前記第１の実施例と同様の
効果を奏すると共に、突起状電極バンプ６の製造が容易
に行なえるという効果をも奏する。Such a configuration also provides the same effects as the first embodiment, and also provides the effect that the protruding electrode bumps 6 can be manufactured easily.
第５図及び第６図は、本発明の第３の実施例を示すもの
である。前記第１の実施例と異なる点は、接着剤及び接
着剤と導電性金属粒子４の電極バンプ６との接合方法で
あり、他は前記第１の実施例と同様である。5 and 6 show a third embodiment of the present invention. The difference from the first embodiment is the adhesive and the method of bonding the adhesive to the electrode bumps 6 of the conductive metal particles 4, and the rest is the same as the first embodiment.
接着剤はエポキシ系、シリコン系等の樹脂を用い、常温
あたりやそれ以下の温度ではほとんど粘着性をもたず固
体であり、加熱により粘着性が現れるものを用いる。導
電性金属粒子４は前記特性を有する接着剤で覆われ、こ
の外側に接着層７を有する導電性金属粒子４を、突起状
電極バンプ６上に配設して加熱することにより、突起状
電極バンプ６に接合させたものである。The adhesive used is an epoxy resin, silicone resin, or the like, which is solid with almost no tackiness at room temperature or lower, and becomes tackier when heated. The conductive metal particles 4 are covered with an adhesive having the above characteristics, and the conductive metal particles 4 having an adhesive layer 7 on the outside thereof are disposed on the protruding electrode bumps 6 and heated, thereby forming the protruding electrodes. It is joined to the bump 6.
、第６図は、本実施例の製造工程を示すもので、まず、
その外側に接着層７を有する導電性金属粒子４を、スク
リーン８等を用いて突起状電極バンプ６上に一列に配設
する（同図（ａ）参照）。その後、加熱することにより
接着剤で被覆した導電性金属粒子４を突起状電極バンプ
６に接着固定する（同図（ｂ）参照）。, FIG. 6 shows the manufacturing process of this example. First,
Conductive metal particles 4 having an adhesive layer 7 on the outside thereof are arranged in a line on the protruding electrode bumps 6 using a screen 8 or the like (see FIG. 3(a)). Thereafter, by heating, the conductive metal particles 4 coated with an adhesive are adhesively fixed to the protruding electrode bumps 6 (see FIG. 6(b)).
このように製造された突起状電極バンプ６に、半導体装
置１を前記第１の実施例と同様にフェースダウンボンデ
ィングする（同図（Ｃ）、（ｄ）参照）。The semiconductor device 1 is face-down bonded to the protruding electrode bumps 6 manufactured in this manner in the same manner as in the first embodiment (see FIGS. 3(C) and 4(d)).
このような構成においても、前記第２の実施例と同様の
効果を奏する。Even in such a configuration, the same effects as in the second embodiment can be achieved.
本発明によれば、導電性金属粒子を突起状電極バンプの
先端のみに接着させたため、導体リード間又は突起状電
極バンプ間の短絡がなくなり、また、突起状ｔｉバンプ
と導体リードの間に介在する導電性金属粒子の数を一定
にかつ増加させることができ、これにより断線不良がな
くなり、さらには、接続抵抗が減少するため高速度で動
作する半導体装置を搭載することができる。また、導電
性金属粒子を形状が球状で同一の径を有するものとした
ため、突起状電極バンプの高さを一定とでき、フェース
ダウンポンディング時の接続が安定する。また、請求項
２及び請求項３に係る製法によれば本発明の構造の突起
状電極バンプが容易に製造できる。According to the present invention, since the conductive metal particles are bonded only to the tips of the protruding electrode bumps, there is no short circuit between the conductor leads or between the protruding electrode bumps, and there is no short circuit between the protruding Ti bumps and the conductor leads. The number of conductive metal particles can be kept constant and increased, thereby eliminating disconnection defects and further reducing connection resistance, making it possible to mount a semiconductor device that operates at high speed. Further, since the conductive metal particles are spherical in shape and have the same diameter, the height of the protruding electrode bump can be kept constant, and the connection during face-down bonding is stable. Further, according to the manufacturing methods according to claims 2 and 3, the protruding electrode bump having the structure of the present invention can be easily manufactured.
第１図は本発明の第１の実施例を示す一部断面側面図、
第２図（ａ）〜（ｄ）は同上の製造方法及び実装方法を
示す一部断面側面図、第３図は本発明の第２の実施例を
示す一部断面側面図、第４図（ａｌ〜（ｄ）は同上の製
造方法及び実装方法を示す一部断面側面図、第５図は本
発明の第３の実施例を示す一部断面側面図、第６図（ａ
）〜（切は同上の製造方法及び実装方法を示す一部断面
側面図、第７図は半導体装置の従来の実装構造を示す一
部断面側面図、第８図は同上の要部一部断面側面図であ
る。
１−半導体装置 ２一基板
３−導体リード ４−導電性金属粒子６−突起状
電極バンプ ７−接着層
８−スクリーンFIG. 1 is a partially sectional side view showing a first embodiment of the present invention;
2(a) to 2(d) are partially sectional side views showing the same manufacturing method and mounting method as above, FIG. 3 is a partially sectional side view showing a second embodiment of the present invention, and FIG. al to (d) are partially sectional side views showing the same manufacturing method and mounting method as above, FIG. 5 is a partially sectional side view showing the third embodiment of the present invention, and FIG.
)~(cut is a partially sectional side view showing the manufacturing method and mounting method of the same as above, FIG. 7 is a partially sectional side view showing the conventional mounting structure of a semiconductor device, and FIG. 8 is a partially sectional side view of the main part of the same as above) It is a side view. 1-Semiconductor device 2-Substrate 3-Conductor lead 4-Conductive metal particle 6-Protruding electrode bump 7-Adhesive layer 8-Screen
Claims (3)
ウンボンディング実装し、突起状電極バンプを介在させ
て電気的接続が採られる半導体装置における突起状電極
バンプの構造において、前記突起状電極バンプの半導体
装置側先端に、接着剤による接着層を形成し、該接着層
に金属材料からなる球状で、略同一径を有する導電性粒
子を均一に付着させたことを特徴とする突起状電極バン
プの構造。(1) In the structure of a protruding electrode bump in a semiconductor device in which a semiconductor device is mounted face-down on a conductor lead on a substrate and electrical connection is established by interposing a protruding electrode bump, the protruding electrode bump is A protruding electrode bump characterized in that an adhesive layer made of adhesive is formed on the tip of the semiconductor device side, and spherical conductive particles made of a metal material and having approximately the same diameter are uniformly adhered to the adhesive layer. structure.
、前記接着剤を磁化させて接着層を形成し、該接着層上
に同様に磁化された金属材料からなる球状の導電性粒子
をその磁力により付着させ、接着剤の硬化後に消磁して
製造されることを特徴とする突起状電極バンプの製法。(2) In the method for manufacturing a protruding electrode bump according to claim 1, the adhesive is magnetized to form an adhesive layer, and spherical conductive particles made of a similarly magnetized metal material are placed on the adhesive layer. A method for manufacturing a protruding electrode bump, characterized in that it is manufactured by attaching it by magnetic force and demagnetizing it after the adhesive hardens.
、金属材料からなる球状の導電性粒子それぞれを、常温
では粘着力の少ない接着剤でつつんで導電性粒子の外側
に均一な接着層を形成し、該導電性粒子をスクリーンを
用いて突起状電極バンプ先端に一層に並べ、加熱するこ
とにより接着硬化させて製造されることを特徴とする突
起状電極バンプの製法。(3) In the method for producing a protruding electrode bump according to claim 1, each spherical conductive particle made of a metal material is wrapped with an adhesive having low adhesive strength at room temperature to form a uniform adhesive layer on the outside of the conductive particle. A method for producing a protruding electrode bump, characterized in that the conductive particles are formed in a single layer at the tip of the protruding electrode bump using a screen, and the adhesive is cured by heating.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2137765A JP2841721B2 (en) | 1990-05-28 | 1990-05-28 | Structure of protruding electrode bump and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2137765A JP2841721B2 (en) | 1990-05-28 | 1990-05-28 | Structure of protruding electrode bump and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0430532A true JPH0430532A (en) | 1992-02-03 |
| JP2841721B2 JP2841721B2 (en) | 1998-12-24 |
Family
ID=15206308
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2137765A Expired - Lifetime JP2841721B2 (en) | 1990-05-28 | 1990-05-28 | Structure of protruding electrode bump and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2841721B2 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6365500B1 (en) * | 1994-05-06 | 2002-04-02 | Industrial Technology Research Institute | Composite bump bonding |
| JP2012017355A (en) * | 2010-07-06 | 2012-01-26 | Sony Chemical & Information Device Corp | Anisotropic conductive adhesive, process for producing the same, connection structure, and process for producing the same |
| JP2012069255A (en) * | 2010-09-21 | 2012-04-05 | Sony Chemical & Information Device Corp | Connection structure manufacturing method |
| CN111799241A (en) * | 2020-06-24 | 2020-10-20 | 霸州市云谷电子科技有限公司 | Bonding structure, method of making the same, and display panel |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3128937U (en) | 2006-11-13 | 2007-02-01 | 株式会社不二鉄工所 | Web winding core |
-
1990
- 1990-05-28 JP JP2137765A patent/JP2841721B2/en not_active Expired - Lifetime
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6365500B1 (en) * | 1994-05-06 | 2002-04-02 | Industrial Technology Research Institute | Composite bump bonding |
| JP2012017355A (en) * | 2010-07-06 | 2012-01-26 | Sony Chemical & Information Device Corp | Anisotropic conductive adhesive, process for producing the same, connection structure, and process for producing the same |
| KR101536825B1 (en) * | 2010-07-06 | 2015-07-14 | 데쿠세리아루즈 가부시키가이샤 | Anisotropic conductive adhesive, process for producing same, connection structure, and process for producing same |
| TWI500051B (en) * | 2010-07-06 | 2015-09-11 | Dexerials Corp | An anisotropic conductive agent, a method for producing the same, a connecting structure, and a method for producing the same |
| US9279070B2 (en) | 2010-07-06 | 2016-03-08 | Dexerials Corporation | Anisotropic conductive adhesive, method of producing the same, connection structure and producing method thereof |
| JP2012069255A (en) * | 2010-09-21 | 2012-04-05 | Sony Chemical & Information Device Corp | Connection structure manufacturing method |
| CN111799241A (en) * | 2020-06-24 | 2020-10-20 | 霸州市云谷电子科技有限公司 | Bonding structure, method of making the same, and display panel |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2841721B2 (en) | 1998-12-24 |
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