JPH0430574B2 - - Google Patents
Info
- Publication number
- JPH0430574B2 JPH0430574B2 JP57174524A JP17452482A JPH0430574B2 JP H0430574 B2 JPH0430574 B2 JP H0430574B2 JP 57174524 A JP57174524 A JP 57174524A JP 17452482 A JP17452482 A JP 17452482A JP H0430574 B2 JPH0430574 B2 JP H0430574B2
- Authority
- JP
- Japan
- Prior art keywords
- light
- substrate
- lens
- reflected
- foreign matter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
- G03F1/84—Inspecting
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Length Measuring Devices By Optical Means (AREA)
Description
【発明の詳細な説明】
本発明はフオトマスクやレクチル(以下基板と
いう)の表面に付着する異物を検査する異物検査
装置に関するものであり、更に詳しくはパターン
や異物付着防止用のペリクル保護膜からの影響を
うけにくい光学系を有する異物検査装置に関す
る。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a foreign matter inspection device for inspecting foreign matter adhering to the surface of a photomask or reticle (hereinafter referred to as a substrate). The present invention relates to a foreign matter inspection device having an optical system that is not easily affected.
ガラスや石英などの透明薄板にクロムなどの層
を形成し、これをエツチングすることにより微細
な透明・不透明の回路パターン(以下パターンと
称す。)を形成する場合、基板表面に異物が存在
すると露光の際に異物の影も転写され不良が発生
する。そこで、露光前の異物検査が不可欠とな
る。 When forming a layer of chromium or other material on a transparent thin plate such as glass or quartz and etching it to form a fine transparent or opaque circuit pattern (hereinafter referred to as a pattern), the presence of foreign matter on the surface of the substrate may cause exposure. During this process, the shadow of the foreign object is also transferred and defects occur. Therefore, it is essential to inspect for foreign substances before exposure.
第1図は従来良く用いられている異物検査装置
の原理を示す図である。同図において、基板1上
にS偏光レーザ光2を照射すると、異物が存在し
ない場合にはS偏光成分4のみが反射される。図
示する様に異物3が存在すると、不規則な形状に
より、P偏光成分5も反射される。これをレンズ
6で集光し偏光板7に透過させると、P偏光成分
5のみが受光器8に入り、異物3の存在が検出さ
れる。 FIG. 1 is a diagram showing the principle of a conventional foreign matter inspection device. In the figure, when a substrate 1 is irradiated with S-polarized laser light 2, only the S-polarized light component 4 is reflected if no foreign matter is present. If a foreign object 3 is present as shown in the figure, the P-polarized light component 5 will also be reflected due to its irregular shape. When this light is focused by a lens 6 and transmitted through a polarizing plate 7, only the P-polarized light component 5 enters the light receiver 8, and the presence of the foreign object 3 is detected.
このとき、基板1上のパターンの影響を少くす
るためには、レーザ光2と基板1のなす角度ψを
できるだけ小さくする必要がある。第2図は基板
1上でよく用いられるパターンの方向を示す図で
ある。レーザ光2に対して、パターンAは0°、パ
ターンBは90°、パターンCは±45°、パターンD
は±30°、パターンEは±60°の角度をなしてい
る。 At this time, in order to reduce the influence of the pattern on the substrate 1, it is necessary to make the angle ψ between the laser beam 2 and the substrate 1 as small as possible. FIG. 2 is a diagram showing the direction of patterns often used on the substrate 1. FIG. For laser beam 2, pattern A is 0°, pattern B is 90°, pattern C is ±45°, pattern D
is at an angle of ±30°, and pattern E is at an angle of ±60°.
さて、パターンの微細化に伴い、検査後の異物
付着防止のため第3図に示す様なペリクル保護膜
を装着するようになつてきた。第3図において、
10は金属製フレームであり、11はニトロセル
ローズ製の薄膜である。 Now, as patterns become finer, a pellicle protective film as shown in FIG. 3 has come to be installed to prevent foreign matter from adhering after inspection. In Figure 3,
10 is a metal frame, and 11 is a thin film made of nitrocellulose.
ところで、異物検査後のペリクル保護膜装着時
にも異物が付着する可能性が大きいため、ペリク
ル保護膜装着後にも異物検査を行う必要がある。
しかし、第3図に示す様にペリクル保護膜装着後
には基板1上にフレーム10が存在するため、第
1図の様にレーザ光2と基板1のなす角ψを小さ
くすることができず、検出感度が更に低下すると
いう課題がある。また、ペリクル保護膜上の異物
やフレームからの反射光が受光器8に入るため検
出感度が更に低下する課題がある。 By the way, since there is a high possibility that foreign matter will adhere even when the pellicle protective film is attached after the foreign matter inspection, it is necessary to perform the foreign matter inspection also after the pellicle protective film is attached.
However, as shown in FIG. 3, since the frame 10 exists on the substrate 1 after the pellicle protective film is attached, it is not possible to reduce the angle ψ between the laser beam 2 and the substrate 1 as shown in FIG. There is a problem that detection sensitivity further decreases. Further, there is a problem that detection sensitivity is further reduced because foreign matter on the pellicle protective film and reflected light from the frame enter the light receiver 8.
本発明の目的は、上記従来技術の課題を解決す
べく、基板表面上に方向性をもつて形成された複
雑な回路パターンやペリクル保護膜等に影響され
ずに、基板表面上に存在する異物を高感度で検査
できるようにした異物検査装置を提供することに
ある。 An object of the present invention is to solve the above-mentioned problems of the prior art by eliminating foreign particles present on the substrate surface without being affected by complicated circuit patterns or pellicle protective films formed with directionality on the substrate surface. An object of the present invention is to provide a foreign matter inspection device that can inspect foreign matter with high sensitivity.
即ち、本発明は、上記目的を達成するために、
回路パターンを方向性をもつて形成した基板表面
に付着した異物を検査する異物検査装着におい
て、レーザ光を、垂直方向に対して傾斜した斜め
方向から上記基板表面に集光照射する照射手段
と、該集光照射するレーザ光と基板とを相対的に
走査する走査手段と、上記照射手段によつて集光
照射されたレーザ光の照射点と焦点面とがほぼ一
致する様に基板の上方に設けられ、且つ上記照射
点からの正反射光を逃がして反射散乱光を集光す
る第1のレンズと、該第1のレンズのフーリエ変
換面に設けられ、且つ上記基板表面上に形成され
た回路パターンからの方向性を有する規則的反射
散乱光を遮光すると共に基板表面上の異物からの
方向性を有しない反射散乱光を通す遮光光学系
と、該遮光光学系を通して得られる異物からの方
向性を有しない反射散乱光を逆フーリエ変換する
第2のレンズと、該第2のレンズの結像点に設け
られ、且つ基板表面上の照射点以外からの入射散
乱光を遮光する遮光手段と、該遮光手段を通過し
た反射散乱光を受光する受光手段とを備え、該受
光手段から検出される信号に基いて回路パターン
を有する基板表面上に存在する異物を検査するよ
うに構成したことを特徴とする異物検査装置であ
る。 That is, in order to achieve the above object, the present invention has the following features:
An irradiation means for condensing and irradiating a laser beam onto the substrate surface from an oblique direction inclined with respect to a vertical direction in a foreign matter inspection installation for inspecting foreign matter attached to a substrate surface on which a circuit pattern is formed with directionality; A scanning means for relatively scanning the condensed irradiated laser beam and the substrate; a first lens provided on the Fourier transform surface of the first lens and configured to release regularly reflected light from the irradiation point and condense reflected scattered light; and a first lens provided on the Fourier transform surface of the first lens and formed on the surface of the substrate. A light-shielding optical system that blocks regular reflected and scattered light that has directionality from a circuit pattern and passes reflected and scattered light that does not have directionality from foreign matter on a substrate surface, and a direction from the foreign matter that is obtained through the light-shielding optical system. a second lens that performs an inverse Fourier transform on reflected and scattered light that has no properties, and a light shielding means that is provided at an imaging point of the second lens and that blocks incident scattered light from other than the irradiation point on the substrate surface. , and a light receiving means for receiving reflected and scattered light that has passed through the light shielding means, and is configured to inspect foreign matter present on the surface of a circuit pattern-bearing substrate based on a signal detected from the light receiving means. This is a foreign object inspection device with special features.
次に本発明の原理について説明する。第4図に
示す光学系において、レンズ15の焦点17が基
板1上のレーザ光18の照射点と重なる様に配置
すると、フーリエ変換面16では第2図のパター
ンに対して第5図に示す様な明線が形成される。
明線20は第2図のパターンB(90°)によるもの
であり、明線21は第2図のパターンE(±60°)
によるものである。従つて、これらの明線部を遮
光してやれば、それ以外の不規則パターン(異
物)からの反射光のみが抽出できる。第5図にお
いて、22は遮光板を示している。 Next, the principle of the present invention will be explained. In the optical system shown in FIG. 4, when the focal point 17 of the lens 15 is arranged so as to overlap the irradiation point of the laser beam 18 on the substrate 1, the Fourier transform surface 16 has the pattern shown in FIG. Bright lines are formed.
Bright line 20 is based on pattern B (90°) in Figure 2, and bright line 21 is based on pattern E (±60°) in Figure 2.
This is due to Therefore, by shielding these bright line areas, only the reflected light from other irregular patterns (foreign objects) can be extracted. In FIG. 5, 22 indicates a light shielding plate.
また、第6図に示す様な光学系を考えると、レ
ーザ光18の基板1上の点36からの反射光はレ
ンズ系30によつて点33の位置に結像する。こ
れに対し、ペリクル保護膜11上の異物31から
の反射光は、レーザ光18が斜めから照射してい
るため点32の位置に結像する。従つて、点33
の位置にピンホール又はスリツト35を配置すれ
ば、基板1からの反射光だけを受光器34に入れ
ることができる。 Further, considering an optical system as shown in FIG. 6, the reflected light of the laser beam 18 from a point 36 on the substrate 1 is imaged by the lens system 30 at the position of a point 33. On the other hand, the reflected light from the foreign matter 31 on the pellicle protective film 11 is imaged at a point 32 because the laser light 18 is irradiated obliquely. Therefore, point 33
By arranging the pinhole or slit 35 at the position, only the reflected light from the substrate 1 can enter the light receiver 34.
本発明の異物検出装置は、第5図と第6図に示
す原理の組合せにより、パターンの影響とペリク
ル保護膜の影響を除く事に特徴がある。 The foreign object detection device of the present invention is characterized by eliminating the influence of the pattern and the influence of the pellicle protective film by combining the principles shown in FIGS. 5 and 6.
以下添付の図面に示す実施例により、更に詳細
に本発明について説明する。第7図及び第8図は
本発明の一実施例を示す図である。第7図におい
て、基板1の斜上方からレーザ光18が照射さ
れ、異物36上に小さなスポツトが形成されたと
する。異物36からの反射光は、レンズ40によ
り集光され、フーリエ変換面16上に置かれた第
5図に示す様な遮光板によつて、パターンからの
反射光と分離される。これがレンズ41で逆フー
リエ変換され、この場合レンズ40とレンズ41
の合成光学系が第6図に示すレンズ系30と等価
になるため、異物36が置かれている点の共役点
33のみ通過できるスリツト35を置ければ、異
物36からの反射光のみが受光器34に入射す
る。レーザ光18は紙面に垂直な方向に走査され
るため、スリツト35もこれに対応するため紙面
に垂直の方向に細長く形成されている。 The present invention will be described in more detail below with reference to embodiments shown in the accompanying drawings. FIG. 7 and FIG. 8 are diagrams showing one embodiment of the present invention. In FIG. 7, it is assumed that the laser beam 18 is irradiated from diagonally above the substrate 1, and a small spot is formed on the foreign object 36. The light reflected from the foreign object 36 is collected by a lens 40 and separated from the light reflected from the pattern by a light shielding plate as shown in FIG. 5 placed on the Fourier transform surface 16. This is inversely Fourier transformed by the lens 41, and in this case, the lens 40 and the lens 41
Since the synthetic optical system is equivalent to the lens system 30 shown in FIG. 6, if a slit 35 is provided that allows only the conjugate point 33 of the point where the foreign object 36 is placed to pass through, only the reflected light from the foreign object 36 will be received. The light enters the vessel 34. Since the laser beam 18 is scanned in a direction perpendicular to the plane of the paper, the slit 35 is also formed to be elongated in the direction perpendicular to the plane of the paper to accommodate this.
第8図は第7図に示す実施例の斜視図である。
同図において、遮光板22は90°と60°のパターン
を遮光する様にしているが、これは場合により
90°のみの遮光にしたり(パターンが0°,±45°,
90°のみから形成される場合)、90°,60°以外の遮
光板を入れることもできる。レーザ光18は走査
光学系51により20〜100μm程度のスポツトに絞
られ、基板1上を矢印50の示す方向に走査を行
う。レンズ40は散乱光を多く取り込むため、
F1.2程度の明るいレンズが望ましい。受光器34
としては、フオトマルを使用すれば良く、このと
きレーザ光以外の波長の外乱光を防ぐため、第9
図に示す様に受光器34とスリツト35の間にレ
ンズ55を置いたり、第10図に示す様に干渉フ
イルタ56を置くことが好ましい。なお、第9図
と第10図において、52はスリツト35を通過
する光線を示している。 FIG. 8 is a perspective view of the embodiment shown in FIG. 7.
In the figure, the light shielding plate 22 is designed to shield 90° and 60° patterns, but this may vary depending on the situation.
You can block light only at 90° (if the pattern is 0°, ±45°,
(If the light is formed from only 90°), a light shielding plate other than 90° or 60° can also be inserted. The laser beam 18 is focused to a spot of about 20 to 100 μm by a scanning optical system 51, and scans the substrate 1 in the direction indicated by an arrow 50. Since the lens 40 takes in a lot of scattered light,
A lens as bright as F1.2 is desirable. Light receiver 34
For this purpose, it is sufficient to use a photomal, and at this time, in order to prevent disturbance light of wavelengths other than laser light, the 9th
It is preferable to place a lens 55 between the light receiver 34 and the slit 35 as shown in the figure, or to place an interference filter 56 as shown in FIG. Note that in FIGS. 9 and 10, reference numeral 52 indicates a light beam passing through the slit 35.
レーザ光は斜めから角度ψで照射されるため、
基板1上のスポツトは一般に円形にならない。そ
こで、第8図に示す走査光学系51にはシリンド
リカルレンズを用いた補正光学系を用いる。第1
1図はその具体例を示す図であり、レーザ発振器
60から照射されるレーザ光はビームエキスパン
ダ61で拡げられ、これがシリンドリカルレンズ
62に入射される。これによつて、レーザ光は長
楕円断面を有するビームに変換され、ガルバノミ
ラー63とレンズ64を介して基板1上の点50
に集光される。こうして、レーザ光は基板1上で
ほぼ円形に集光する。レーザ光の走査はガルバノ
ミラー63によつて行なわれ、ガルバノミラー6
3のかわりにポリゴンミラーを用いても良い。 Since the laser beam is irradiated obliquely at an angle ψ,
Spots on substrate 1 are generally not circular. Therefore, a correction optical system using a cylindrical lens is used as the scanning optical system 51 shown in FIG. 1st
FIG. 1 is a diagram showing a specific example thereof. Laser light irradiated from a laser oscillator 60 is expanded by a beam expander 61, and then enters a cylindrical lens 62. As a result, the laser beam is converted into a beam having a long elliptical cross section, and is passed through the galvano mirror 63 and lens 64 to the point 50 on the substrate 1.
The light is focused on. In this way, the laser beam is focused on the substrate 1 in a substantially circular shape. Scanning of the laser beam is performed by a galvano mirror 63.
A polygon mirror may be used instead of 3.
第7図及び第8図に示す実施例では、光学系の
走査距離が短いため、大きな基板全面の検査を行
うためには第12図に示す様にテーブル送りと走
査を繰り返し行う。同図において、70は光学系
による走査を示し、71はテーブル送りによる走
査を示している。 In the embodiments shown in FIGS. 7 and 8, since the scanning distance of the optical system is short, table feeding and scanning are repeated as shown in FIG. 12 in order to inspect the entire surface of a large substrate. In the figure, 70 indicates scanning by an optical system, and 71 indicates scanning by table feeding.
第13図は第7図に示す受光器34の出力を受
けて異物の存否を検出する回路の一例を示す図で
ある。同図において、34はフオトマルで構成さ
れる受光器、100はマイクロコンピユータ、1
01はタイミング発生回路、102はテーブルア
ドレスカウンタ、103はモータ駆動回路、10
4はモータ、105はガルバノミラー角度カウン
タ、106はガルバノミラー駆動回路、63はガ
ルバノミラー、107は入力バツフア、110は
アンプ、111はコンパレータ、120はスター
ト信号、121はタイミングパルス、122は割
込信号、123はアドレスデータ、124は異物
検出データである。 FIG. 13 is a diagram showing an example of a circuit that detects the presence or absence of a foreign object by receiving the output of the light receiver 34 shown in FIG. 7. In the figure, numeral 34 is a photoreceiver composed of a photomultiplier, 100 is a microcomputer, and 1
01 is a timing generation circuit, 102 is a table address counter, 103 is a motor drive circuit, 10
4 is a motor, 105 is a galvano mirror angle counter, 106 is a galvano mirror drive circuit, 63 is a galvano mirror, 107 is an input buffer, 110 is an amplifier, 111 is a comparator, 120 is a start signal, 121 is a timing pulse, 122 is an interrupt 123 is address data, and 124 is foreign object detection data.
以上説明したように、本発明によれば、基板表
面上に通常0°、90°、±30°、±45°、±60°などに
よう
に方向性を有して形成される回路パターンやペル
クル保護膜等の影響をなくして上記基板表面上に
付着した異物を高感度で検査することができ、そ
の結果異物が付着していない基板を用いて露光す
ることができ、良品の半導体製品を歩留まり良く
製造することができる効果を奏する。 As explained above, according to the present invention, circuit patterns and It is possible to detect foreign matter adhering to the surface of the substrate with high sensitivity by eliminating the influence of the Percle protective film, etc., and as a result, it is possible to perform exposure using a substrate free of foreign matter, and it is possible to detect non-defective semiconductor products. This has the advantage of being able to be manufactured with high yield.
第1図は従来の異物検査装置の一例を示す斜視
図、第2図は基板上のパターンの方向を示す説明
図、第3図はペリクル保護膜装置の状態を示す斜
視図、第4図は本発明の原理であるフーリエ変換
法を示す説明図、第5図は本発明の原理である遮
光板の状態を示す説明図、第6図は本発明の原理
であるスリツト法を示す断面図、第7図は本発明
の実施例を示す断面図、第8図は第7図に示す実
施例の斜視図、第9図及び第10図は受光器の入
射光からレーザ光以外の光を除くための光学系を
示す断面図、第11図は走査光学系の概要を示す
斜視図、第12図は基板走査法の一例を示す説明
図、第13図は検査回路の一例を示すブロツク図
である。
1……基板、2,18,52……レーザ光、
3,31,36……異物、6,15,40,4
1,55,64……レンズ、7,22……偏光
板、8,34……受光器、10……フレーム、1
1……ペリクル保護膜、16……フーリエ変換
面、30……レンズ系、35……スリツト、51
……走査光学系、56……干渉フイルタ、60…
…レーザ発振器、61……ビームエキスパンダ、
62……シリンドリカルレンズ、63……ガルバ
ノミラー。
Fig. 1 is a perspective view showing an example of a conventional foreign matter inspection device, Fig. 2 is an explanatory drawing showing the direction of the pattern on the substrate, Fig. 3 is a perspective view showing the state of the pellicle protective film device, and Fig. 4 is An explanatory diagram showing the Fourier transform method which is the principle of the present invention, FIG. 5 is an explanatory diagram showing the state of the light shielding plate which is the principle of the present invention, and FIG. 6 is a sectional view showing the slit method which is the principle of the present invention. FIG. 7 is a sectional view showing an embodiment of the present invention, FIG. 8 is a perspective view of the embodiment shown in FIG. 7, and FIGS. 9 and 10 show that light other than laser light is removed from the incident light of the light receiver. 11 is a perspective view showing an overview of the scanning optical system, FIG. 12 is an explanatory diagram showing an example of a substrate scanning method, and FIG. 13 is a block diagram showing an example of an inspection circuit. be. 1... Substrate, 2, 18, 52... Laser light,
3, 31, 36... Foreign matter, 6, 15, 40, 4
1, 55, 64... Lens, 7, 22... Polarizing plate, 8, 34... Light receiver, 10... Frame, 1
1... Pellicle protective film, 16... Fourier transform surface, 30... Lens system, 35... Slit, 51
...Scanning optical system, 56...Interference filter, 60...
...Laser oscillator, 61...Beam expander,
62...Cylindrical lens, 63...Galvano mirror.
Claims (1)
表面に付着した異物を検査する異物検査装置にお
いて、レーザ光を、垂直方向に対して傾斜した斜
め方向から上記基板表面に集光照射する照射手段
と、該集光照射するレーザ光と基板とを相対的に
走査する走査手段と、上記照射手段によつて集光
照射されたレーザ光の照射点と焦点面とがほぼ一
致する様に基板の上方に設けられ、且つ上記照射
点からの正反射光を逃がして反射散乱光を集光す
る第1のレンズと、該第1のレンズのフーリエ変
換面に設けられ、且つ上記基板表面上に形成され
た回路パターンからの方向性を有する規則的反射
散乱光を遮光すると共に基板表面上の異物からの
方向性を有しない反射散乱光を通す遮光光学系
と、該遮光光学系を通して得られる異物からの方
向性を有しない反射散乱光を逆フーリエ変換する
第2のレンズと、該第2のレンズの結像点に設け
られ、且つ基板表面上の照射点以外からの入射散
乱光を遮光する遮光手段と、該遮光手段を通過し
た反射散乱光を受光する受光手段とを備え、該受
光手段から検出される信号に基いて回路パターン
を有する基板表面上に存在する異物を検査するよ
うに構成したことを特徴とする異物検査装置。1. A foreign matter inspection device for inspecting foreign matter attached to the surface of a substrate on which a circuit pattern is formed with directionality, comprising: an irradiation means for condensing and irradiating the surface of the substrate with laser light from an oblique direction inclined with respect to the vertical direction; , a scanning means for relatively scanning the condensed irradiated laser beam and the substrate, and an upper part of the substrate so that the irradiation point of the condensed and irradiated laser beam by the irradiation means and the focal plane substantially coincide with each other. a first lens provided on the Fourier transform surface of the first lens and configured to release regularly reflected light from the irradiation point and condense reflected scattered light; and a first lens provided on the Fourier transform surface of the first lens and formed on the surface of the substrate. A light-shielding optical system that blocks regular reflected and scattered light that has directionality from a circuit pattern formed on a substrate, and also transmits reflected and scattered light that has no directionality from foreign matter on a substrate surface; a second lens that performs inverse Fourier transform on reflected and scattered light that has no directionality, and a light shielding means that is provided at the imaging point of the second lens and that shields incident scattered light from other than the irradiation point on the substrate surface. and a light-receiving means for receiving reflected and scattered light that has passed through the light-shielding means, and is configured to inspect foreign matter present on the surface of a substrate having a circuit pattern based on a signal detected from the light-receiving means. A foreign object inspection device featuring:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57174524A JPS5965428A (en) | 1982-10-06 | 1982-10-06 | Foreign substance detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57174524A JPS5965428A (en) | 1982-10-06 | 1982-10-06 | Foreign substance detector |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP28102291A Division JPH079407B2 (en) | 1991-10-28 | 1991-10-28 | Foreign matter inspection method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5965428A JPS5965428A (en) | 1984-04-13 |
| JPH0430574B2 true JPH0430574B2 (en) | 1992-05-22 |
Family
ID=15980025
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57174524A Granted JPS5965428A (en) | 1982-10-06 | 1982-10-06 | Foreign substance detector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5965428A (en) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0621877B2 (en) * | 1986-02-14 | 1994-03-23 | キヤノン株式会社 | Surface condition measuring device |
| JPH0646182B2 (en) * | 1986-06-27 | 1994-06-15 | 株式会社日立製作所 | Apparatus and method for inspecting foreign matter on mask |
| JPS636854A (en) * | 1986-06-27 | 1988-01-12 | Hitachi Ltd | Foreign object inspection device |
| JPS636442A (en) * | 1986-06-27 | 1988-01-12 | Hitachi Ltd | Method and device for foreign matter inspection |
| JPH0752156B2 (en) * | 1986-06-27 | 1995-06-05 | 株式会社日立製作所 | Foreign matter inspection device |
| JPH0629860B2 (en) * | 1986-07-28 | 1994-04-20 | キヤノン株式会社 | Surface condition inspection device |
| US5274434A (en) * | 1990-04-02 | 1993-12-28 | Hitachi, Ltd. | Method and apparatus for inspecting foreign particles on real time basis in semiconductor mass production line |
| JPH0498149A (en) * | 1990-08-15 | 1992-03-30 | Nec Corp | Defect inspection device |
| JPH04204143A (en) * | 1990-11-30 | 1992-07-24 | Hitachi Ltd | Method and apparatus for discriminating crack in shaft surface with laser |
| US5463459A (en) | 1991-04-02 | 1995-10-31 | Hitachi, Ltd. | Method and apparatus for analyzing the state of generation of foreign particles in semiconductor fabrication process |
| US5410400A (en) * | 1991-06-26 | 1995-04-25 | Hitachi, Ltd. | Foreign particle inspection apparatus |
| JP3314440B2 (en) * | 1993-02-26 | 2002-08-12 | 株式会社日立製作所 | Defect inspection apparatus and method |
| JP3699776B2 (en) * | 1996-04-02 | 2005-09-28 | 株式会社日立製作所 | Manufacturing method of electronic parts |
| JP2010236920A (en) * | 2009-03-30 | 2010-10-21 | Jasco Corp | Fine particle measuring device |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5191737A (en) * | 1975-02-10 | 1976-08-11 |
-
1982
- 1982-10-06 JP JP57174524A patent/JPS5965428A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5965428A (en) | 1984-04-13 |
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