JPH04318959A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPH04318959A JPH04318959A JP3085164A JP8516491A JPH04318959A JP H04318959 A JPH04318959 A JP H04318959A JP 3085164 A JP3085164 A JP 3085164A JP 8516491 A JP8516491 A JP 8516491A JP H04318959 A JPH04318959 A JP H04318959A
- Authority
- JP
- Japan
- Prior art keywords
- sealing resin
- leads
- lead
- semiconductor chip
- resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
- H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink
Landscapes
- Lead Frames For Integrated Circuits (AREA)
Abstract
Description
【０００１】0001
【産業上の利用分野】本発明は、半導体装置に係り、特
に樹脂モールドされるリードフレームの形状に関するも
のである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to semiconductor devices, and more particularly to the shape of lead frames molded with resin.
【０００２】0002
【従来の技術】図５は従来のリードフレーム上への半導
体チップの実装状態を示す斜視図であり、図６は樹脂封
止後の図５のＣ−Ｃ線による断面図である。これらの図
において、１は半導体チップ、２はこの半導体チップ１
が取り付けられるリード、３，４は前記リード２と直角
に交わる方向のリード、５は前記半導体チップ１とリー
ド２，３，４とを接続する金属細線、６は前記半導体チ
ップ１と金属細線５を外部衝撃から保護するため樹脂封
止が施された封止樹脂、７は前記リード３，４をフォー
ミングしたリードフォーミング部である。リードフレー
ムを構成するリード２，３，４をヒータ（図示せず）で
加熱し、半導体チップ１を金錫半田（図示せず）等によ
りリード２に固着し、次ステーション上で、金等の金属
細線５により半導体チップ１のボンディングパターンと
、各リード２，３，４とを接続する。その後、エポキシ
等の封止樹脂６により、樹脂封止する。封止を終えた半
導体装置のリード２，３，４は、フォーミング加工（リ
ードフォーミング部７）された後、所定の長さに切断さ
れる。この後、回路基板に半導体装置のフォーミング加
工を施し、封止樹脂６下面とほぼ同一の高さとなったリ
ード２，３，４を半田付けして取り付ける。2. Description of the Related Art FIG. 5 is a perspective view showing a state in which a semiconductor chip is mounted on a conventional lead frame, and FIG. 6 is a sectional view taken along the line CC in FIG. 5 after resin sealing. In these figures, 1 is a semiconductor chip, and 2 is this semiconductor chip 1.
3 and 4 are leads in a direction perpendicular to the leads 2, 5 is a thin metal wire connecting the semiconductor chip 1 and the leads 2, 3, and 4, and 6 is a thin metal wire 5 between the semiconductor chip 1 and the leads 2, 3, and 4. 7 is a lead forming part in which the leads 3 and 4 are formed. The leads 2, 3, and 4 that make up the lead frame are heated with a heater (not shown), and the semiconductor chip 1 is fixed to the leads 2 with gold-tin solder (not shown). The bonding pattern of the semiconductor chip 1 and each lead 2, 3, 4 are connected by a thin metal wire 5. Thereafter, resin sealing is performed using a sealing resin 6 such as epoxy. The leads 2, 3, and 4 of the semiconductor device that have been sealed are subjected to a forming process (lead forming section 7) and then cut into a predetermined length. Thereafter, the circuit board is subjected to a semiconductor device forming process, and the leads 2, 3, and 4, which are at approximately the same height as the lower surface of the sealing resin 6, are attached by soldering.
【０００３】0003
【発明が解決しようとする課題】従来の半導体装置は、
以上のように構成されているので、封止樹脂６より外部
へ取り出されるリード２〜４は図６に示すように、封止
樹脂６の厚みのほぼ中央からとなり、回路基板へ取り付
けるためにはリード２〜４を封止樹脂６下面と同一また
は若干下になるようにフォーミング加工する必要がある
。[Problems to be Solved by the Invention] Conventional semiconductor devices are
With the structure described above, the leads 2 to 4 taken out from the sealing resin 6 to the outside are from approximately the center of the thickness of the sealing resin 6, as shown in FIG. It is necessary to form the leads 2 to 4 so that they are flush with or slightly below the lower surface of the sealing resin 6.
【０００４】また、高周波で使用される半導体装置では
、半導体チップ１から回路基板の半田付け部分までの距
離が長くなるため、リード２〜４による損失が大きくな
り、半導体チップ１の性能を十分に引き出すことができ
なくなるなどの問題点があった。In addition, in semiconductor devices used at high frequencies, the distance from the semiconductor chip 1 to the soldered part of the circuit board becomes long, so the loss due to the leads 2 to 4 becomes large, and the performance of the semiconductor chip 1 is not fully maintained. There were problems such as not being able to withdraw the money.
【０００５】本発明は、上記のような問題点を解消する
ためになされたもので、リードフレームの形状を変更す
ることにより、半導体チップの性能を最大限に引き出す
ようにした半導体装置を得ることを目的とする。The present invention has been made to solve the above-mentioned problems, and provides a semiconductor device that maximizes the performance of a semiconductor chip by changing the shape of a lead frame. With the goal.
【０００６】[0006]
【課題を解決するための手段】本発明に係る半導体装置
は、封止樹脂内に収納されるリード部分をフォーミング
加工し、封止樹脂下面と水平にリードを取り出す構造と
したものである。[Means for Solving the Problems] A semiconductor device according to the present invention has a structure in which a lead portion accommodated in a sealing resin is formed and the leads are taken out horizontally to the lower surface of the sealing resin.
【０００７】[0007]
【作用】本発明における半導体装置は、封止樹脂内部の
リード部分がフォーミング加工されることにより、封止
樹脂下面より水平にリードが取り出せることから、回路
基板へ装着した場合にも、リードによる損失を低く抑え
ることができる。[Operation] In the semiconductor device of the present invention, the lead portion inside the sealing resin is formed, so that the leads can be taken out horizontally from the bottom surface of the sealing resin. can be kept low.
【０００８】[0008]
【実施例】以下、本発明の一実施例を図について説明す
る。図１は本発明によるリードフレームを構成するリー
ド上への半導体チップの実装状態を示す斜視図、図２は
、図１のＡ−Ａ線によるモールド後の断面図を示す。
これらの図において、各部の構成は図５，図６と同じで
あるが、この実施例では、リードフォーミング部７は封
止樹脂６内で加工されており、かつ封止樹脂６の下面と
水平に取り出されている。DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings. FIG. 1 is a perspective view showing a state in which a semiconductor chip is mounted on a lead constituting a lead frame according to the present invention, and FIG. 2 is a cross-sectional view taken along line A--A in FIG. 1 after molding. In these figures, the configuration of each part is the same as in FIGS. 5 and 6, but in this embodiment, the lead forming part 7 is processed within the sealing resin 6, and is parallel to the lower surface of the sealing resin 6. It has been taken out.
【０００９】このような構造のリードフレームを使用す
ることにより、封止樹脂６より取り出されるリード２〜
４は、封止樹脂６下面と水平方向となる。これにより、
回路基板への半導体装置の取り付けは、封止樹脂６から
取り出されたリード２〜４の根元で半田付けができ、半
導体チップ１から回路基板の半田付け部分までの距離は
封止樹脂６内部のリードフレームの長さと同等となり、
長さが短縮できる。By using a lead frame having such a structure, the leads 2 to 2 taken out from the sealing resin 6
4 is horizontal to the lower surface of the sealing resin 6. This results in
The semiconductor device can be attached to the circuit board by soldering at the base of the leads 2 to 4 taken out from the sealing resin 6, and the distance from the semiconductor chip 1 to the soldered part of the circuit board is determined by the distance inside the sealing resin 6. It is equivalent to the length of the lead frame,
The length can be shortened.
【００１０】なお、上記実施例では、半導体チップ１を
取り付けるリード２と、他のリード３，４の高さを同一
としたが、図３，図４に示すように、リード２の半導体
チップ１を取り付ける部分を凹状にしてもよい。In the above embodiment, the height of the lead 2 to which the semiconductor chip 1 is attached is the same as that of the other leads 3 and 4, but as shown in FIGS. The part to which it is attached may be made concave.
【００１１】[0011]
【発明の効果】以上説明したように、本発明によれば、
封止樹脂からのリードの引き出しは、封止樹脂下面より
水平方向となり、また、半導体チップから回路基板まで
の距離が短縮でき、高周波で使用される半導体装置では
、損失を押えることができ、半導体チップの性能を十分
に引き出せる効果がある。[Effects of the Invention] As explained above, according to the present invention,
The leads from the encapsulating resin are pulled out horizontally from the bottom surface of the encapsulating resin, and the distance from the semiconductor chip to the circuit board can be shortened, reducing loss in semiconductor devices used at high frequencies. This has the effect of bringing out the full performance of the chip.
【図１】本発明の一実施例によるリードフレームを示す
斜視図である。FIG. 1 is a perspective view showing a lead frame according to an embodiment of the present invention.
【図２】図１の樹脂封止後のＡ−Ａ線による断面図であ
る。FIG. 2 is a cross-sectional view taken along line AA of FIG. 1 after resin sealing.
【図３】本発明の他の実施例によるリードフレームを示
す斜視図である。FIG. 3 is a perspective view showing a lead frame according to another embodiment of the present invention.
【図４】図３の樹脂封止後のＢ−Ｂ線による断面図であ
る。FIG. 4 is a sectional view taken along line BB after resin sealing in FIG. 3;
【図５】従来のリードフレームを示す斜視図である。FIG. 5 is a perspective view showing a conventional lead frame.
【図６】図５の樹脂封止後のＣ−Ｃ線による断面図であ
る。FIG. 6 is a sectional view taken along line CC of FIG. 5 after resin sealing.
１ 半導体チップ ２ リード ３ リード ４ リード ５ 金属細線 ６ 封止樹脂 ７ リードフォーミング部 1 Semiconductor chip 2 Lead 3 Lead 4 Lead 5 Thin metal wire 6 Sealing resin 7 Lead forming section
Claims (1)
た半導体チップを封止樹脂により樹脂封止した半導体装
置において、前記封止樹脂内に収納されるリード部分を
フォーミング加工し、このリードを前記封止樹脂下面よ
り水平に取り出したことを特徴とする半導体装置。1. A semiconductor device in which a semiconductor chip mounted on the leads of a lead frame is sealed with a sealing resin, in which a lead portion accommodated in the sealing resin is formed, and the leads are sealed in the sealing resin. A semiconductor device characterized in that it is taken out horizontally from the bottom surface of a stopper resin.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3085164A JPH04318959A (en) | 1991-04-17 | 1991-04-17 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3085164A JPH04318959A (en) | 1991-04-17 | 1991-04-17 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04318959A true JPH04318959A (en) | 1992-11-10 |
Family
ID=13851023
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3085164A Pending JPH04318959A (en) | 1991-04-17 | 1991-04-17 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04318959A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5844308A (en) * | 1997-08-20 | 1998-12-01 | Cts Corporation | Integrated circuit anti-bridging leads design |
| US5942794A (en) * | 1996-10-22 | 1999-08-24 | Matsushita Electronics Corporation | Plastic encapsulated semiconductor device and method of manufacturing the same |
-
1991
- 1991-04-17 JP JP3085164A patent/JPH04318959A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5942794A (en) * | 1996-10-22 | 1999-08-24 | Matsushita Electronics Corporation | Plastic encapsulated semiconductor device and method of manufacturing the same |
| US6130115A (en) * | 1996-10-22 | 2000-10-10 | Matsushita Electronics Corporation | Plastic encapsulated semiconductor device and method of manufacturing the same |
| US5844308A (en) * | 1997-08-20 | 1998-12-01 | Cts Corporation | Integrated circuit anti-bridging leads design |
| EP0898309A3 (en) * | 1997-08-20 | 2000-02-09 | CTS Corporation | An integrated circuit anti-bridging leads design |
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