JPH0432031B2 - - Google Patents
Info
- Publication number
- JPH0432031B2 JPH0432031B2 JP62186753A JP18675387A JPH0432031B2 JP H0432031 B2 JPH0432031 B2 JP H0432031B2 JP 62186753 A JP62186753 A JP 62186753A JP 18675387 A JP18675387 A JP 18675387A JP H0432031 B2 JPH0432031 B2 JP H0432031B2
- Authority
- JP
- Japan
- Prior art keywords
- sic
- sintered body
- boron
- carbon
- toughness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 43
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 12
- 229910052796 boron Inorganic materials 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 12
- 239000002131 composite material Substances 0.000 claims description 11
- 239000000843 powder Substances 0.000 claims description 11
- 150000001875 compounds Chemical class 0.000 claims description 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 8
- 229910052799 carbon Inorganic materials 0.000 claims description 8
- 239000002245 particle Substances 0.000 claims description 8
- 238000010304 firing Methods 0.000 claims description 6
- 229910052580 B4C Inorganic materials 0.000 claims description 2
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 claims description 2
- 238000002156 mixing Methods 0.000 claims description 2
- 150000002894 organic compounds Chemical class 0.000 claims description 2
- 238000000465 moulding Methods 0.000 claims 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 40
- 239000000654 additive Substances 0.000 description 13
- 230000000996 additive effect Effects 0.000 description 7
- 238000000280 densification Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 238000001272 pressureless sintering Methods 0.000 description 7
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 239000002994 raw material Substances 0.000 description 6
- 239000000919 ceramic Substances 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000002441 X-ray diffraction Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- JQMFQLVAJGZSQS-UHFFFAOYSA-N 2-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]piperazin-1-yl]-N-(2-oxo-3H-1,3-benzoxazol-6-yl)acetamide Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)N1CCN(CC1)CC(=O)NC1=CC2=C(NC(O2)=O)C=C1 JQMFQLVAJGZSQS-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000007731 hot pressing Methods 0.000 description 2
- 230000002706 hydrostatic effect Effects 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 229910021431 alpha silicon carbide Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000012752 auxiliary agent Substances 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000002775 capsule Substances 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 239000011812 mixed powder Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000013001 point bending Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
Landscapes
- Ceramic Products (AREA)
Description
（産業上の利用分野）
本発明は、SiC特有の高温特性を有し、かつ靱
性の高い焼結体を常圧焼結により得ることのでき
るSiC複合焼結体及びその製造方法に関するもの
である。
（従来の技術）
従来、単一相のSiC焼結体としてはその添加物
によりＢ−Ｃ系助剤SiCとAl系助剤SiCとがある。
Ｂ−Ｃ系SiCは高温特性は良好だが靱性が劣る
（KIC＝２〜3MN／ｍ3/2）ことが、またAl系SiC
は靱性は良好だが高温特性がそれほど良好でない
ことが知られている。
Al系SiCにおいて、より高靱性化を目的とし
て、特開昭60−186468号公報においてセラミツク
ス構造材及びその製造方法が開示されている。こ
のセラミツクス構造材は、炭化ケイ素に周期表の
第ａ族若しくは第ａ族元素の各ホウ化物の
少なくとも１種を含有させたものであり、所定組
成の元素を混合し、1900〜2500℃の範囲内の温度
で焼成して得られるものである。
（発明が解決しようとする問題点）
しかしながら、上述した特開昭60−186468号公
報に示されたセラミツクス構造材においては、そ
の実施例では、W2Bを添加剤としホツトプレス
により緻密化を進め破壊靱性を改善している。こ
れはW2Bが難焼結性であり、常圧焼結では、緻
密化できない欠点を有するためである。しかしホ
ツトプレスは複雑形状の焼結体を得ることができ
ないとともに、量産性、製造コストの点で工業的
利用価値は低い。
また、一般にAl系助剤を用いた場合、低融点
粒界相がSiC粒界に残存し、高温での強度低下、
耐酸化性の低下等高温材料としては致命的欠点を
有している。
本発明の目的は上述した欠点を解消して、SiC
特有の高温特性を維持しつつ靱性の高い焼結体を
常圧焼結により得ることのできる高強度・高靱性
SiC複合焼結体及びその製造方法を提供しようと
するものである。
（問題点を解決するための手段）
本発明の第１発明であるSiC複合焼結体は、
SiCが20〜99wt％、W2B5が80〜0.5wt％、硼素、
炭素、炭化硼素のうち少なくとも１種類が0.5〜
5wt％からなることを特徴とする焼結体である。
本発明の第２発明であるSiC複合焼結体の製造
方法は、平均粒径5μｍ以下のSiC粉末20〜99wt
％、W2B5又はW2B5を生成する化合物をW2B5に
換算して80〜0.5wt％、硼素又は硼素を含有する
化合物を硼素に換算して0.1〜5wt％、炭素又は炭
素を生成する有機化合物を炭素に換算して0.1〜
5wt％からなる調合粉末を混合成形し、次いで真
空中又は不活性雰囲気中1900〜2300℃の温度下で
焼成することを特徴とするものである。
（作用）
上述した構成において、Ｂ−Ｃ系SiCに所定量
のW2B5を含有させることにより、Ｂ−Ｃ系SiC
の欠点であつた靱性を高めることができ、高温で
も高強度で高靱性のSiC複合焼結体を常圧焼結に
より得ることができる。すなわち、W2B5は熱的
に安定なため優れた高温特性を発揮するととも
に、SiCに比べてヤング率が高く、SiCマトリツ
クス内を進展するクラツクがW2B5粒子により反
跳されるクラツクデイフレクト作用が有効に発揮
され靱性が向上する。同時にW2B5自体焼結過程
で緻密化を促進する効果があり、従来のSiC焼結
体では得られない高密度を常圧焼結法で達成でき
る。各種硼化物、及びSiCのヤング率、融点を第
１表にまとめて示す。本データは、サムソノフ著
高融点化合物便覧より抜すいした。
(Industrial Application Field) The present invention relates to a SiC composite sintered body that has high temperature characteristics unique to SiC and can obtain a highly tough sintered body by pressureless sintering, and a method for manufacturing the same. . (Prior Art) Conventionally, single-phase SiC sintered bodies include B--C type auxiliary SiC and Al-based auxiliary SiC, depending on their additives.
B-C-based SiC has good high-temperature properties but poor toughness (K IC = 2~3MN/m 3/2 ), and Al-based SiC
Although it has good toughness, it is known that its high temperature properties are not so good. In order to improve the toughness of Al-based SiC, a ceramic structural material and a method for manufacturing the same are disclosed in Japanese Patent Application Laid-open No. 186468/1983. This ceramic structural material is made by making silicon carbide contain at least one type of each boride of Group A or Group A elements of the periodic table, and is made by mixing elements of a predetermined composition and heating it at a temperature in the range of 1900 to 2500°C. It is obtained by firing at a temperature within (Problems to be Solved by the Invention) However, in the ceramic structural material disclosed in the above-mentioned Japanese Patent Application Laid-Open No. 60-186468, densification is promoted by hot pressing using W 2 B as an additive. Improves fracture toughness. This is because W 2 B is difficult to sinter and cannot be densified by pressureless sintering. However, hot pressing cannot produce a sintered body with a complicated shape, and its industrial utility value is low in terms of mass productivity and manufacturing cost. Additionally, when Al-based auxiliary agents are used, low melting point grain boundary phases remain at SiC grain boundaries, resulting in a decrease in strength at high temperatures and
It has fatal drawbacks as a high-temperature material, such as reduced oxidation resistance. The purpose of the present invention is to eliminate the above-mentioned drawbacks and to
High-strength and high-toughness sintered bodies with high toughness can be obtained by pressureless sintering while maintaining unique high-temperature properties.
The present invention aims to provide a SiC composite sintered body and a method for manufacturing the same. (Means for solving the problem) The SiC composite sintered body, which is the first invention of the present invention, has the following features:
SiC 20 ~ 99wt%, W2B5 80~0.5wt%, boron,
At least one of carbon and boron carbide is 0.5~
It is a sintered body characterized by consisting of 5wt%. The method for producing a SiC composite sintered body, which is the second invention of the present invention, uses 20 to 99 wt of SiC powder with an average particle size of 5 μm or less.
%, W 2 B 5 or a compound that produces W 2 B 5 is 80 to 0.5 wt% in terms of W 2 B 5 , boron or a compound containing boron is 0.1 to 5 wt % in terms of boron, carbon or Organic compounds that generate carbon are converted to carbon from 0.1 to
It is characterized in that a blended powder consisting of 5 wt% is mixed and molded, and then fired at a temperature of 1900 to 2300°C in a vacuum or an inert atmosphere. (Function) In the above-mentioned configuration, by containing a predetermined amount of W 2 B 5 in B-C system SiC, B-C system SiC
It is possible to improve the toughness, which was a drawback in the previous method, and it is possible to obtain a SiC composite sintered body with high strength and high toughness even at high temperatures by pressureless sintering. In other words, W 2 B 5 is thermally stable and exhibits excellent high-temperature properties, and also has a higher Young's modulus than SiC, meaning that cracks that propagate within the SiC matrix are recoiled by W 2 B 5 particles. The deflection effect is effectively exerted and toughness is improved. At the same time, W 2 B 5 itself has the effect of promoting densification during the sintering process, and a high density that cannot be obtained with conventional SiC sintered bodies can be achieved using the pressureless sintering method. Table 1 summarizes the Young's modulus and melting point of various borides and SiC. This data was extracted from Samsonov's Handbook of High Melting Point Compounds.
【表】
これらの効果はSiCとW2B5の複合焼結体にお
いてのみ得られるものであり、従来全く知られて
いない。
原料となるSiC粉末の平均粒径を5μｍ以下と限
定したのは、SiC粉末の平均粒径が5μｍを超える
と常圧焼結で緻密化が不可能なためである。
SiCの組成範囲を20〜99wt％と限定したのは、
他の添加物との関係で他の添加物の総量が80wt
％を超えると基礎となるSiCの特性を十分に発揮
することができないとともに、1wt％未満である
と添加物の性質改善効果がないためである。な
お、このSiCの組成範囲は30〜95wt％であると好
ましく、40〜90wt％であるとさらに好ましい。
添加物として、W2B5が80〜0.5wt％と限定した
のは、80wt％を超えると高温特性が劣化すると
ともに0.5wt％未満であると靱性の向上がないた
めである。この添加量は70〜5wt％であると好ま
しく、60〜10wt％であるとさらに好ましい。
また、Ｂ化合物を0.1〜5wt％と限定したのは、
0.1wt％未満であるとその添加効果が認められず、
緻密化に寄与しないとともに、5wt％を超えると
緻密化が阻害されるとともにＢが粒界に多量に残
り高温特性が劣化するためである。
さらに、Ｃ化合物を0.1〜5wt％と限定したの
は、0.1wt％未満ではSiC表面のSiO2膜を除去で
きないとともに5wt％を超えると焼成体にfree−
Ｃが多量に残り特性が劣化するためである。
（実施例）
第１図は本発明製造方法の製造工程の一例を示
す図である。まず、SiC原料粉末の平均粒径を5μ
ｍ以下となるように準備するとともに、添加剤と
してW2B5，Ｂ，Ｃを準備する。本実施例に用い
たSiC原料粉末はβ−SiC：93wt％を含み残部が
α−SiCよりなり、平均粒計0.42μｍ、比表面積
20.0m2／ｇであり、第２表に示す化学組成を有し
ている。
第２表 （wt％）
Total−Si 69.13
Free−SiO2 0.47
Free−Si 0.010
Free−Ｃ 0.51
Ｏ 0.90
Al 0.056
Fe 0.060
Ca 0.016
Mg 0.001
Ｋ ＜0.001
Na 0.001
Cu −
Ti 0.007Ｎ 0.27
次に準備したSiC原料粉末およびW2B5，Ｂ，
Ｃの添加剤の所定量を、イソプロピルアルコール
を使用した湿式ボールミルにより粉砕・混合す
る。粉砕・混合後の原料は一旦乾燥した後造粒す
る。その後、造粒した粉末を予備成形し、さらに
静水圧プレスにより所定形状に成形する。最後に
1900〜2300℃真空中又は不活性ガス中で焼成して
焼結体を得ている。
なお、上述した製造方法において、W2B5の添
加を、W2B5以外の硼化物、酸化物、単体及び硼
素含有添加剤として別々に添加し、焼成初期又は
焼成前の別な熱処理等によりW2B5を成形体内又
は混合粉末内で合成することも可能である。この
場合、W2B5を合成させるに十分な余分のＢの添
加が必要となる。また成形体を焼成後、カプセル
HIP又はカプセルフリーHIPによりさらに緻密化
を行ない特性をさらに向上することも可能であ
る。
以下、実際の例について説明する。
実施例 １
平均粒度5μｍ以下のSiC粉末、添加剤として
W2B5、焼結助剤としてＢ（金属硼素）、Ｃ（カー
ボンブラツク）を第３表に示す割合でイソプロピ
ルアルコールを使用した湿式ボールミルで混合、
乾燥後造粒し、さらに予備成形後3ton／cm2の静水
圧プレスにより60×60×６mmの角板を作製した。
作製した角板を1500℃までは真空中でその後アル
ゴン１気圧中2100℃で１時間焼成してそれぞれ本
発明実施例および比較例の焼結体を得た。なお実
施例５−２は実施例５の焼結体に対して2000℃、
2000気圧のHIP処理を行なつたものである。
得られたそれぞれの焼結体に対して、焼結体を
鏡面研磨し気孔分布より焼結体の相対密度を測定
して緻密性を評価するとともに、室温および1400
℃の温度でJIS Ｒ−1601（フアインセラミツクス
の曲げ強さ試験法）に従つた四点曲げ試験を実施
して室温、高温強度を評価した。さらに、室温に
おけるシユブロンノツチ法によりそれぞれのKIC
を求めて靱性を評価するとともに、CuKαを用い
たＸ線回折法により、焼結体中のＷ化合物を同定
した。結果を第３表に示す。[Table] These effects can only be obtained in a composite sintered body of SiC and W 2 B 5 , and are completely unknown in the past. The reason why the average particle size of the SiC powder used as a raw material was limited to 5 μm or less is because if the average particle size of the SiC powder exceeds 5 μm, it is impossible to densify it by pressureless sintering. The composition range of SiC was limited to 20-99wt% because
In relation to other additives, the total amount of other additives is 80wt
This is because if it exceeds 1%, the properties of the basic SiC cannot be fully exhibited, and if it is less than 1wt%, there is no effect of improving the properties of the additive. The composition range of this SiC is preferably 30 to 95 wt%, more preferably 40 to 90 wt%. The reason why W 2 B 5 is limited to 80 to 0.5 wt% as an additive is that if it exceeds 80 wt%, the high temperature properties deteriorate, and if it is less than 0.5 wt%, there is no improvement in toughness. The amount added is preferably 70 to 5 wt%, more preferably 60 to 10 wt%. In addition, the reason why compound B was limited to 0.1 to 5 wt% was that
If it is less than 0.1wt%, the effect of its addition will not be recognized,
This is because B does not contribute to densification, and if it exceeds 5 wt%, densification is inhibited and a large amount of B remains at grain boundaries, deteriorating high-temperature properties. Furthermore, the reason for limiting the C compound to 0.1 to 5wt% is that if it is less than 0.1wt%, the SiO 2 film on the SiC surface cannot be removed, and if it exceeds 5wt%, the fired body will be free-
This is because a large amount of C remains and the characteristics deteriorate. (Example) FIG. 1 is a diagram showing an example of the manufacturing process of the manufacturing method of the present invention. First, the average particle size of the SiC raw material powder was set to 5μ.
In addition, W 2 B 5 , B, and C are prepared as additives. The SiC raw material powder used in this example contained 93 wt% of β-SiC and the remainder was α-SiC, with an average particle size of 0.42 μm and a specific surface area.
20.0 m 2 /g, and has the chemical composition shown in Table 2. Table 2 (wt%) Total-Si 69.13 Free-SiO 2 0.47 Free-Si 0.010 Free-C 0.51 O 0.90 Al 0.056 Fe 0.060 Ca 0.016 Mg 0.001 K <0.001 Na 0.001 Cu - Ti 0.007 N 0.27Next prepared SiC Raw material powder and W 2 B 5 , B,
A predetermined amount of additive C is ground and mixed using a wet ball mill using isopropyl alcohol. The raw materials after being crushed and mixed are once dried and then granulated. Thereafter, the granulated powder is preformed and further molded into a predetermined shape using a hydrostatic press. lastly
A sintered body is obtained by firing at 1900-2300°C in vacuum or in an inert gas. In addition, in the above-mentioned manufacturing method, W 2 B 5 is added separately as a boron other than W 2 B 5 , an oxide, a simple substance, and a boron-containing additive, and W 2 B 5 is added separately as a boron-containing additive, and a separate heat treatment, etc. It is also possible to synthesize W 2 B 5 in a molded body or mixed powder. In this case, it is necessary to add enough extra B to synthesize W 2 B 5 . In addition, after firing the molded body, the capsule
It is also possible to further improve the properties by further densification using HIP or capsule-free HIP. An actual example will be explained below. Example 1 SiC powder with an average particle size of 5 μm or less, as an additive
W 2 B 5 , B (metallic boron) and C (carbon black) as sintering aids were mixed in a wet ball mill using isopropyl alcohol in the proportions shown in Table 3.
After drying, the mixture was granulated, and after preforming, a square plate of 60 x 60 x 6 mm was produced by hydrostatic pressing at 3 tons/cm 2 .
The produced square plates were fired in a vacuum up to 1500°C and then at 2100°C for 1 hour in 1 atm of argon to obtain sintered bodies of examples of the present invention and comparative examples, respectively. In addition, in Example 5-2, the sintered body of Example 5 was heated at 2000℃,
It was subjected to HIP treatment at 2000 atmospheres. For each of the obtained sintered bodies, the sintered bodies were mirror-polished, the relative density of the sintered bodies was measured from the pore distribution, and the compactness was evaluated.
A four-point bending test according to JIS R-1601 (Fine Ceramics Bending Strength Test Method) was conducted at a temperature of .degree. C. to evaluate room temperature and high temperature strength. Furthermore, each K IC was determined by the Shubron Notch method at room temperature.
In addition to evaluating the toughness by determining , the W compound in the sintered body was identified by X-ray diffraction using CuKα. The results are shown in Table 3.
【表】【table】
【表】
第３表の結果から、本発明の組成範囲を満足す
る実施例１〜10は比較例１〜６と比べて緻密かつ
高温強度が良好であるとともに従来のSiC単味の
KIC（２〜３）に比べて高いKIC値を示し靱性が向
上していることがわかる。さらに、焼成後HIP処
理を行なつた実施例５−２では、すべての点がさ
らに良好な性質が得られた。
焼結体中のＷ化合物はJCPDSカードNo.30−
1385に示されるW2B5であることが確認された。
第３表中実施例４のCuKα線によるＸ線回折線
を第２図に示す。
また、本実施例の焼結体を化学分析した結果、
SiC原料及び添加剤に含まれる不可避の金属不純
物（Al，Fe，Ca，Mg，Ti，Mn等）が0.01〜
0.06wt％検出された。
実施例 ２
本発明における必須成分であるW2B5をW2B5
以外の硼化物、炭化物、酸化物単体で添加し、粉
砕、混合後、実施例１と同様の方法でそれぞれの
焼結体を得た。
その後、得られた焼結体の理論密度とＷ化合物
を実施例１と同様の方法で求めた。結果を第４表
に示す。[Table] From the results in Table 3, Examples 1 to 10 that satisfy the composition range of the present invention are denser and have better high-temperature strength than Comparative Examples 1 to 6.
It can be seen that the K IC value is higher than that of K IC (2 to 3), and the toughness is improved. Furthermore, in Example 5-2, in which HIP treatment was performed after firing, even better properties were obtained in all respects. The W compound in the sintered body is JCPDS card No. 30-
It was confirmed that it was W 2 B 5 shown in No. 1385. The X-ray diffraction line of Example 4 in Table 3 using CuKα rays is shown in FIG. Furthermore, as a result of chemical analysis of the sintered body of this example,
Unavoidable metal impurities (Al, Fe, Ca, Mg, Ti, Mn, etc.) contained in SiC raw materials and additives are 0.01~
0.06wt% detected. Example 2 W 2 B 5 which is an essential component in the present invention is converted into W 2 B 5
Other borides, carbides, and oxides were added alone, pulverized, and mixed, and then sintered bodies were obtained in the same manner as in Example 1. Thereafter, the theoretical density and W compound of the obtained sintered body were determined in the same manner as in Example 1. The results are shown in Table 4.
【表】
第４表の結果から、比較例７〜12に示すように
W2B5以外の添加剤の場合、従来知られているＢ
量（1wt％添加）では焼結体の高い相対密度すな
わち緻密化を達成することができないことがわか
る。また比較例13、14に示すようにＢの量を増加
したものであつても焼結体中でW2B5になつてい
ないと、同様に高い相対密度を達成できないこと
がわかる。
実施例11、12に示すようにＢの量を更に増加
し、Ｂの量のモル数がＷ添加量のモル数の2.5倍
（Ｗ：50wt％の場合、Ｂ：7.3wt％）以上添加し
た場合、W2B5が焼成初期に成形体中で形成さ
れ、実施例１で示したW2B5で添加した場合と同
様に緻密化を達成することができることがわか
る。
（発明の効果）
以上詳細に説明したところから明らかなよう
に、本発明のSiC複合焼結体およびその製造方法
によれば、Ｂ−Ｃ系SiCに所定量のW2B5を含有
させることにより、高温強度を保つたままＢ−Ｃ
系SiCの欠点であつた靱性を高めることができ、
高温でも高強度で高靱性のSiC複合焼結体を常圧
焼結により得ることができる。
本発明のSiC複合焼結体の特徴を従来技術と比
較して第５表に示す。[Table] From the results in Table 4, as shown in Comparative Examples 7 to 12
In the case of additives other than W 2 B 5 , conventionally known B
It can be seen that a high relative density, that is, densification of the sintered body cannot be achieved with the addition of 1 wt%. Furthermore, as shown in Comparative Examples 13 and 14, it can be seen that even if the amount of B is increased, unless it becomes W 2 B 5 in the sintered body, a similarly high relative density cannot be achieved. As shown in Examples 11 and 12, the amount of B was further increased, and the number of moles of B was added at least 2.5 times the number of moles of W added (in the case of W: 50 wt%, B: 7.3 wt%). It can be seen that in this case, W 2 B 5 is formed in the compact at the early stage of firing, and densification can be achieved in the same way as when W 2 B 5 is added as shown in Example 1. (Effects of the Invention) As is clear from the detailed explanation above, according to the SiC composite sintered body and the manufacturing method thereof of the present invention, a predetermined amount of W 2 B 5 can be contained in B-C system SiC. B-C while maintaining high temperature strength
The toughness, which was a drawback of SiC, can be improved.
A SiC composite sintered body with high strength and toughness even at high temperatures can be obtained by pressureless sintering. Table 5 shows the characteristics of the SiC composite sintered body of the present invention in comparison with the conventional technology.
第１図は本発明製造方法の製造工程の一例を示
す図、第２図は本発明により得られた焼結体実施
例４のCuKα線によるＸ線回折結果の回折線を示
す線図である。
FIG. 1 is a diagram showing an example of the manufacturing process of the manufacturing method of the present invention, and FIG. 2 is a diagram showing the diffraction lines of the X-ray diffraction results using CuKα rays of the sintered body Example 4 obtained by the present invention. .
Claims (1)
素、炭素、炭化硼素のうち少なくとも１種類が
0.5〜5wt％からなることを特徴とするSiC複合焼
結体。 ２ 平均粒径5μｍ以下のSiC粉末20〜99wt％、
W2B5又はW2B5を生成する化合物をW2B5に換算
して80〜0.5wt％、硼素又は硼素を含有する化合
物を硼素に換算して0.1〜5wt％、炭素又は炭素を
生成する有機化合物を炭素に換算して0.1〜5wt％
からなる調合粉末を混合成形し、次いで真空中又
は不活性雰囲気中1900〜2300℃の温度下で焼成す
ることを特徴とするSiC複合焼結体の製造方法。[Claims] 1. 20 to 99 wt% of SiC, 80 to 0.5 wt% of W2B5 , and at least one of boron, carbon, and boron carbide.
A SiC composite sintered body characterized by comprising 0.5 to 5 wt%. 2 20 to 99 wt% SiC powder with an average particle size of 5 μm or less,
W 2 B 5 or a compound that produces W 2 B 5 is 80 to 0.5 wt% in terms of W 2 B 5 , boron or a compound containing boron is 0.1 to 5 wt % in terms of boron, carbon or carbon 0.1 to 5wt% of the organic compounds produced in terms of carbon
1. A method for producing a SiC composite sintered body, which comprises mixing and molding a blended powder consisting of the following: and then firing it at a temperature of 1900 to 2300°C in a vacuum or an inert atmosphere.
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62186753A JPS6433070A (en) | 1987-07-28 | 1987-07-28 | Sic composite sintered body and production thereof |
| US07/222,554 US4963516A (en) | 1987-07-28 | 1988-07-21 | SiC complex sintered bodies and production thereof |
| EP88306863A EP0301802B1 (en) | 1987-07-28 | 1988-07-26 | Sic complex sintered bodies and production thereof |
| DE88306863T DE3881777T2 (en) | 1987-07-28 | 1988-07-26 | Sintered silicon carbide composites and process for their manufacture. |
| CA000573126A CA1314295C (en) | 1987-07-28 | 1988-07-27 | Sic complex sintered bodies and production thereof |
| KR1019880009535A KR900005510B1 (en) | 1987-07-28 | 1988-07-28 | Method for producing siliconcarbide-sinteringbody |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62186753A JPS6433070A (en) | 1987-07-28 | 1987-07-28 | Sic composite sintered body and production thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6433070A JPS6433070A (en) | 1989-02-02 |
| JPH0432031B2 true JPH0432031B2 (en) | 1992-05-28 |
Family
ID=16194039
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62186753A Granted JPS6433070A (en) | 1987-07-28 | 1987-07-28 | Sic composite sintered body and production thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6433070A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2736380B2 (en) * | 1987-08-11 | 1998-04-02 | 株式会社豊田中央研究所 | Method for producing silicon carbide material and raw material composition |
-
1987
- 1987-07-28 JP JP62186753A patent/JPS6433070A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6433070A (en) | 1989-02-02 |
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