JPH04325599A - Sulfuric acid composition having low surface tension - Google Patents
Sulfuric acid composition having low surface tensionInfo
- Publication number
- JPH04325599A JPH04325599A JP3097302A JP9730291A JPH04325599A JP H04325599 A JPH04325599 A JP H04325599A JP 3097302 A JP3097302 A JP 3097302A JP 9730291 A JP9730291 A JP 9730291A JP H04325599 A JPH04325599 A JP H04325599A
- Authority
- JP
- Japan
- Prior art keywords
- sulfuric acid
- surface tension
- low surface
- acid composition
- present
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Emulsifying, Dispersing, Foam-Producing Or Wetting Agents (AREA)
- Detergent Compositions (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
【0001】0001
【産業上の利用分野】本発明は硫酸組成物に関するもの
であり、特に、半導体製造工程における洗浄剤として有
用な硫酸組成物に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a sulfuric acid composition, and particularly to a sulfuric acid composition useful as a cleaning agent in semiconductor manufacturing processes.
【0002】0002
【従来の技術】集積回路等に代表される微細加工技術は
近年益々その加工精度を向上させており、ダイナミック
ランダムアクセスメモリー(DRAM)を例にとれば、
現在では、サブミクロンの加工技術が大量生産レベルの
技術として確立されている。微細加工技術においてはウ
エハー上に存在するパーティクルが加工精度に重大な影
響を与え、フォトリソグラフィー等の各工程では硫酸等
の洗浄剤を用い、ウエハー上のパーティクルを除去する
のが通例である。上記集積回路の集積度が向上するに伴
いパターンの微細化、凹凸の複雑化等も相まって洗浄工
程に要求されるパーティクルの除去もより厳しい要求が
なされてきている。[Prior Art] In recent years, microfabrication technology represented by integrated circuits has been increasingly improving its processing accuracy. Taking dynamic random access memory (DRAM) as an example,
Currently, submicron processing technology has been established as a mass production level technology. In microfabrication technology, particles present on a wafer have a significant effect on processing accuracy, and in each process such as photolithography, it is customary to use a cleaning agent such as sulfuric acid to remove particles on the wafer. As the degree of integration of the above-mentioned integrated circuits increases, patterns become finer, irregularities become more complex, etc., and the removal of particles required in the cleaning process is also becoming more demanding.
【0003】硫酸は半導体製造工程において、シリコン
基板の洗浄、レジスト膜の除去等に単独で、また、他の
物質と混合して使用されている。しかし、従来の高純度
硫酸を使用すると、表面張力が大きく濡れ性が悪いため
、洗浄剤が微細なパターン間内に浸透し難く、洗浄が不
十分になるなどの不都合があった。特開平2−2402
85号は硫酸にフッ素系界面活性剤を添加した低表面張
力の硫酸組成物を教えている。[0003] Sulfuric acid is used alone or in combination with other substances for cleaning silicon substrates, removing resist films, etc. in semiconductor manufacturing processes. However, when conventional high-purity sulfuric acid is used, it has a large surface tension and poor wettability, which makes it difficult for the cleaning agent to penetrate between fine patterns, resulting in insufficient cleaning. Japanese Patent Publication No. 2-2402
No. 85 teaches a low surface tension sulfuric acid composition in which a fluorosurfactant is added to sulfuric acid.
【0004】0004
【発明が解決しようとする課題】本発明の目的は、前記
の背景に鑑み、低表面張力にて濡れ性が良い硫酸組成物
を提供することにある。SUMMARY OF THE INVENTION In view of the above background, an object of the present invention is to provide a sulfuric acid composition that has low surface tension and good wettability.
【0005】[0005]
【課題を解決するための手段】このような問題点を解決
するために我々は種々検討を重ねた結果、特定のフッ素
系界面活性剤を用いれば目的を達成することができるこ
とを見出し本発明を完成した。即ち、本発明の要旨は一
般式
R1 −SO2 −NR2 −CH2 −CHOR
3 −CH2 OR4 (1)(式中
R1 はフルオロアルキル基を示し、R2 は炭素数1
〜6のアルキル基を示し、R3 及びR4 は同じでも
異なっていてもよく水素原子またはスルホ基を示す。)
で表わされるフルオロアルキルスルホンアミド化合物を
硫酸に配合してなる低表面張力を有する硫酸組成物に存
する。[Means for Solving the Problems] In order to solve these problems, as a result of various studies, we discovered that the purpose could be achieved by using a specific fluorine-based surfactant, and developed the present invention. completed. That is, the gist of the present invention is the general formula R1 -SO2 -NR2 -CH2 -CHOR
3 -CH2OR4 (1) (in the formula, R1 represents a fluoroalkyl group, R2 has a carbon number of 1
-6 alkyl groups, and R3 and R4 may be the same or different and represent a hydrogen atom or a sulfo group. )
A sulfuric acid composition having a low surface tension is obtained by blending a fluoroalkylsulfonamide compound represented by the following with sulfuric acid.
【0006】以下、本発明を説明する。上記一般式(1
)において、R1で表わされるフルオロアルキル基は通
常、炭素数3以上、好ましくは5〜20のアルキル基の
水素原子の1部をフッ素原子で置換したものであり、そ
の置換率は50%以上好ましくは80%以上である。R
2 で表わされるアルキル基としては例えばメチル、エ
チル、直鎖乃至は分岐のプロピル、ブチル、ペンチル、
ヘキシル等炭素数1〜6のアルキル基であり、就中、炭
素数2〜5のアルキル基が好ましい。The present invention will be explained below. The above general formula (1
), the fluoroalkyl group represented by R1 is usually an alkyl group having 3 or more carbon atoms, preferably 5 to 20 carbon atoms, in which a portion of the hydrogen atoms are substituted with fluorine atoms, and the substitution rate is preferably 50% or more. is 80% or more. R
Examples of the alkyl group represented by 2 include methyl, ethyl, linear or branched propyl, butyl, pentyl,
It is an alkyl group having 1 to 6 carbon atoms such as hexyl, and an alkyl group having 2 to 5 carbon atoms is particularly preferable.
【0007】本発明の低表面張力硫酸組成物においては
、上記一般式(1)に示されるフルオロアルキルスルホ
ンアミド化合物を適当量添加し溶解させることを必須と
するものであり、その添加量は、硫酸に対して0.00
1〜0.1重量%であり、より好ましい添加量は0.0
05〜0.05重量%である。上記添加量より少なすぎ
ると効果が十分でなく、又多すぎてもそれ以上の効果が
得られず意味がない。In the low surface tension sulfuric acid composition of the present invention, it is essential to add and dissolve an appropriate amount of the fluoroalkylsulfonamide compound represented by the above general formula (1), and the amount added is as follows: 0.00 for sulfuric acid
The amount is 1 to 0.1% by weight, and the more preferable amount is 0.0% by weight.
05 to 0.05% by weight. If the amount added is too small, the effect will not be sufficient, and if it is too large, no further effect will be obtained and it is meaningless.
【0008】又、添加される硫酸(水溶液)はあまり薄
すぎると洗浄効果が十分でないため、一般的には60重
量%以上、好ましくは70重量%以上のものが使用され
る。本発明で用いられるフルオロアルキルスルホンアミ
ド化合物は上記高濃度、及び/又は高温下の硫酸中でも
十分に安定であり、十分にその効果を発揮する。又、硫
酸は過酸化水素水と混合にて洗浄用に供される場合があ
るが、本発明で用いられるフルオロアルキルスルホンア
ミド化合物はこのような強酸化性の雰囲気にても安定で
あり、高温下でも十分にその効果を発揮する。なお、本
発明の硫酸組成物は半導体製造工程で使用することを主
目的とするものであるから、原料である硫酸,スルホン
アミド共に高純度のものを使用する必要がある。[0008] Furthermore, if the sulfuric acid (aqueous solution) added is too dilute, the cleaning effect will not be sufficient, so generally 60% by weight or more, preferably 70% by weight or more is used. The fluoroalkylsulfonamide compound used in the present invention is sufficiently stable even in sulfuric acid at the above-mentioned high concentration and/or high temperature, and fully exhibits its effects. In addition, sulfuric acid is sometimes used for cleaning by mixing with hydrogen peroxide solution, but the fluoroalkylsulfonamide compound used in the present invention is stable even in such a strongly oxidizing atmosphere, and can be used at high temperatures. The effect is fully demonstrated even at the bottom. Since the sulfuric acid composition of the present invention is primarily intended for use in semiconductor manufacturing processes, it is necessary to use highly purified raw materials, sulfuric acid and sulfonamide.
【0009】[0009]
【実施例】次に具体例を挙げて本発明を更に詳しく説明
するが、本発明はその要旨を越えないかぎりは実施例に
よりなんら制限を受けるものではない。
実施例1〜4及び比較例1〜2
89%硫酸に表−1記載のスルホンアミドの所定量を添
加し、22℃における表面張力をウイルヘルミ法で測定
した。また、比較のためスルホンアミド無添加(比較例
1)及び本発明で使用されるスルホンアミドと類似構造
を有する下式(A)のスルホンアミドを用いた場合(比
較例2)について同様に表面張力を測定した。結果を表
−1に示す。EXAMPLES Next, the present invention will be explained in more detail with reference to specific examples, but the present invention is not limited in any way by the examples unless the gist of the invention is exceeded. Examples 1 to 4 and Comparative Examples 1 to 2 A predetermined amount of the sulfonamide listed in Table 1 was added to 89% sulfuric acid, and the surface tension at 22°C was measured by the Wilhelmi method. In addition, for comparison, the surface tension was similarly measured when no sulfonamide was added (Comparative Example 1) and when a sulfonamide of the following formula (A) having a similar structure to the sulfonamide used in the present invention was used (Comparative Example 2). was measured. The results are shown in Table-1.
【0010】比較例スルホンアミド
C8 H17SO2 N(C3 H7 )−(
CH2 CH2 O)20H (A)Comparative Example Sulfonamide C8 H17SO2 N(C3 H7)-(
CH2 CH2 O)20H (A)
【
0011】[
0011
【表1】
実施例−5
実施例−2で用いた硫酸組成物と30重量%過酸化水素
水とを4:1(容量比)にて混合した混合組成物を、表
−2に示した時間加温保持し、経時的にサンプリングし
た組成物の22℃における表面張力を測定した。結果を
表−2に示す。[Table 1] Example-5 A mixed composition obtained by mixing the sulfuric acid composition used in Example-2 and 30% by weight hydrogen peroxide solution at a ratio of 4:1 (volume ratio) is shown in Table-2. The surface tension of the composition was measured at 22° C. after being heated and maintained for a period of time and sampled over time. The results are shown in Table-2.
【0012】0012
【表2】[Table 2]
【0013】[0013]
【発明の効果】本発明によれば、低表面張力にて、高酸
化性雰囲気下、高温下でも安定な硫酸組成物を提供でき
、高集積回路の工業生産上利するところ大である。According to the present invention, it is possible to provide a sulfuric acid composition that has a low surface tension and is stable even in a highly oxidizing atmosphere and at high temperatures, which is highly advantageous in the industrial production of highly integrated circuits.
Claims (1)
3 −CH2 OR4 (1)(式中
、R1 はフルオロアルキル基を示し、R2 は炭素数
1〜6のアルキル基を示し、R3 及びR4 は同じで
も異なっていても良く水素原子またはスルホ基を示す)
で表わされるフルオロアルキルスルホンアミド化合物を
硫酸に配合してなる低表面張力を有する硫酸組成物[Claim 1] General formula R1 -SO2 -NR2 -CH2 -CHOR
3 -CH2OR4 (1) (wherein, R1 represents a fluoroalkyl group, R2 represents an alkyl group having 1 to 6 carbon atoms, and R3 and R4 may be the same or different and represent a hydrogen atom or a sulfo group. )
A sulfuric acid composition having a low surface tension obtained by blending a fluoroalkylsulfonamide compound represented by sulfuric acid with sulfuric acid.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3097302A JPH04325599A (en) | 1991-04-26 | 1991-04-26 | Sulfuric acid composition having low surface tension |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3097302A JPH04325599A (en) | 1991-04-26 | 1991-04-26 | Sulfuric acid composition having low surface tension |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04325599A true JPH04325599A (en) | 1992-11-13 |
Family
ID=14188696
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3097302A Pending JPH04325599A (en) | 1991-04-26 | 1991-04-26 | Sulfuric acid composition having low surface tension |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04325599A (en) |
-
1991
- 1991-04-26 JP JP3097302A patent/JPH04325599A/en active Pending
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