JPH0432564A - Backing plate for sputtering - Google Patents
Backing plate for sputteringInfo
- Publication number
- JPH0432564A JPH0432564A JP13877290A JP13877290A JPH0432564A JP H0432564 A JPH0432564 A JP H0432564A JP 13877290 A JP13877290 A JP 13877290A JP 13877290 A JP13877290 A JP 13877290A JP H0432564 A JPH0432564 A JP H0432564A
- Authority
- JP
- Japan
- Prior art keywords
- backing plate
- sputtering
- copper
- zirconium
- chromium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004544 sputter deposition Methods 0.000 title claims abstract description 15
- 229910000881 Cu alloy Inorganic materials 0.000 claims abstract description 9
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims abstract description 7
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 7
- 239000011651 chromium Substances 0.000 claims abstract description 7
- 229910052726 zirconium Inorganic materials 0.000 claims abstract description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 8
- 229910052802 copper Inorganic materials 0.000 abstract description 8
- 239000010949 copper Substances 0.000 abstract description 8
- 238000005477 sputtering target Methods 0.000 abstract description 7
- 239000000463 material Substances 0.000 abstract description 6
- 230000032683 aging Effects 0.000 abstract description 4
- 238000005482 strain hardening Methods 0.000 abstract description 2
- 230000002542 deteriorative effect Effects 0.000 abstract 2
- 108010053481 Antifreeze Proteins Proteins 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 238000001816 cooling Methods 0.000 description 7
- 230000035882 stress Effects 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 5
- 229910000831 Steel Inorganic materials 0.000 description 2
- QZLJNVMRJXHARQ-UHFFFAOYSA-N [Zr].[Cr].[Cu] Chemical compound [Zr].[Cr].[Cu] QZLJNVMRJXHARQ-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- JUVGUSVNTPYZJL-UHFFFAOYSA-N chromium zirconium Chemical compound [Cr].[Zr] JUVGUSVNTPYZJL-UHFFFAOYSA-N 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- 229910001093 Zr alloy Inorganic materials 0.000 description 1
- GXDVEXJTVGRLNW-UHFFFAOYSA-N [Cr].[Cu] Chemical compound [Cr].[Cu] GXDVEXJTVGRLNW-UHFFFAOYSA-N 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- XTYUEDCPRIMJNG-UHFFFAOYSA-N copper zirconium Chemical compound [Cu].[Zr] XTYUEDCPRIMJNG-UHFFFAOYSA-N 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明はスパッタリング用ターゲットを保持、冷却する
ためのバッキングプレートに関する。詳しくは、熱伝導
がよく、変形が小さいスパッタリング用バッキングプレ
ートに関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a backing plate for holding and cooling a sputtering target. Specifically, the present invention relates to a backing plate for sputtering that has good thermal conductivity and little deformation.
［従来の技術］
スパッタリングは、高真空下、被スパツタリング体とス
パッタリング用ターゲットとを対向させて行われる。ス
パッタリング用ターゲットとしては、光磁気ディスク用
の希土類金属合金、透明導電性フィルム用の酸化インジ
ウム−スズ等のような脆い材質の材料が多く使用されて
いる。[Prior Art] Sputtering is performed under high vacuum, with an object to be sputtered and a sputtering target facing each other. As targets for sputtering, brittle materials such as rare earth metal alloys for magneto-optical disks and indium-tin oxide for transparent conductive films are often used.
スパッタリング用ターゲットは、熱伝導性のよい銅製の
冷却・保持板、すなわちバッキングプレートに接着して
使用されている。ターゲットはスパッタリングに際し、
温度が上昇するのでバッキングプレートのターゲット接
着面の反対面には冷却用設備がマグネットと共に設けら
れる。A sputtering target is used by being bonded to a cooling/holding plate made of copper with good thermal conductivity, that is, a backing plate. When sputtering, the target is
Since the temperature increases, cooling equipment is provided on the opposite side of the backing plate from the target adhesion side along with the magnet.
［発明が解決しようとする課題］
最近のマグネトロン型スパッタリング装置においては、
大電力の投入が可能となり、スパッタリング膜の生成速
度が増大している。それに伴ってスパッタリング用ター
ゲットの温度上昇も大きくなり、効率的に冷却すること
が要求されている。[Problem to be solved by the invention] In recent magnetron type sputtering equipment,
It has become possible to input large amounts of electric power, and the rate of sputtering film production is increasing. As a result, the temperature of the sputtering target also increases, and efficient cooling is required.
また、スパッタリングさせるに必要な磁場を効率的に供
給することも要求されている。It is also required to efficiently supply the magnetic field necessary for sputtering.
これを解決する手段として、バッキングプレートの厚み
を薄くすることが試みられている。しかしながら、バッ
キングプレートは、ターゲット接着面が高真空であり、
その反対面の冷却設備および磁石取り付は面が大気圧で
あるので、あまり薄くすると変形してしまう。さらにス
パッタリング用ターゲットは、バッキングプレートの変
形により破損したり、バッキングプレートから剥離する
という欠点があった。As a means to solve this problem, attempts have been made to reduce the thickness of the backing plate. However, the backing plate has a target adhesion surface under high vacuum;
The cooling equipment and magnet mounting on the opposite side are under atmospheric pressure, so if they are made too thin, they will deform. Furthermore, sputtering targets have the disadvantage of being damaged or peeled off from the backing plate due to deformation of the backing plate.
［課題を解決するための手段］
本発明者らは、上記問題点を解決すべく鋭意検討を行っ
た結果、特定の金属を含有する銅合金により銅の有する
熱伝導性を損なうことなく、充分な耐変形性を有するス
パッタリング用バッキングプレートが得られることを知
得して本発明に到達した。[Means for Solving the Problems] As a result of intensive studies to solve the above-mentioned problems, the present inventors have found that a copper alloy containing a specific metal can be used without impairing the thermal conductivity of copper. The present invention was achieved based on the knowledge that a backing plate for sputtering having excellent deformation resistance can be obtained.
すなわち、本発明の要旨はクロムおよび／またはジルコ
ニウムを０．１〜２．０重量％含有する銅合金からなる
ことを特徴とするスパッタリング用バッキングプレート
に存する。That is, the gist of the present invention resides in a sputtering backing plate characterized by being made of a copper alloy containing 0.1 to 2.0% by weight of chromium and/or zirconium.
以下、本発明の詳細な説明する。The present invention will be explained in detail below.
本発明のバッキングプレートは、クロム、ジルコニウム
またはクロム−ジルコニウムを０．１〜２．０重量％含
有する銅合金を材質とすることを特徴とする。クロム、
ジルコニウムまたはクロム−ジルコニウム含有量が０．
１重量％より少ないと耐変形性が悪くなるので好ましく
ない。また、この含有量が２．０重量％より多いと熱伝
導性および加工性が悪くなるので好ましくない。バッキ
ングプレー トは、その片面に設けられる冷却設備のは
んだ付けやターゲットのボンディング等による熱履歴を
受ける。The backing plate of the present invention is characterized in that it is made of a copper alloy containing 0.1 to 2.0% by weight of chromium, zirconium, or chromium-zirconium. chromium,
Zirconium or chromium-zirconium content is 0.
If it is less than 1% by weight, deformation resistance will deteriorate, which is not preferable. Moreover, if this content is more than 2.0% by weight, thermal conductivity and processability will deteriorate, which is not preferable. The backing plate is subjected to heat history due to soldering of the cooling equipment installed on one side of the backing plate, bonding of the target, etc.
第１図は、後述の実施例１および比較例１で作製したバ
ッキングプレートの熱履歴による引張応力の変化（測定
対象のバッキングプレートを所定温度まで昇温し、６０
分間保持した後、常温に戻して引張応力を測定した。）
を示した図である。従来用いられていた銅（無酸素銅）
製のもの（比較例１）は約２００°Ｃから引張応力が低
下し軟化現象が起こるが、本発明の調合金製のもの（実
施例１）は約４００°Ｃから軟化現象が起こることが分
かる。はんだ付は等における温度は約３００°Ｃであり
、実施例１で用いた銅合金はバッキングプレートとして
十分な耐熱性を有する。Figure 1 shows the change in tensile stress due to the thermal history of the backing plates produced in Example 1 and Comparative Example 1 (described later).
After holding for a minute, the temperature was returned to room temperature and the tensile stress was measured. )
FIG. Traditionally used copper (oxygen-free copper)
(Comparative Example 1), the tensile stress decreases and a softening phenomenon occurs from about 200°C, but the material made from the prepared alloy of the present invention (Example 1) shows a softening phenomenon from about 400°C. I understand. The temperature during soldering is about 300°C, and the copper alloy used in Example 1 has sufficient heat resistance as a backing plate.
本発明に用いられる銅合金は、熱処理は特に行わなくて
もよいが、例えば時効処理（例えば４５０〜５５０’Ｃ
）、または冷間加工と時効処理との組合せ等の熱処理を
行うと更に好ましい材料となる。The copper alloy used in the present invention does not need to be particularly heat treated, but may be subjected to aging treatment (e.g. 450 to 550'C).
), or a combination of cold working and aging treatment, the material becomes more preferable.
［実施例］
以下、本発明を実施例により更に詳細に説明するが、本
発明はその要旨を越えない限り実施例により限定される
ものではない。[Examples] Hereinafter, the present invention will be explained in more detail with reference to Examples, but the present invention is not limited by the Examples unless the gist thereof is exceeded.
実施例１
銅−クロム−ジルコニウムの合金（三菱金属（株）製“
’ＯＭＣ”：銅９９．２重量％、クロム０．５３重量％
、ジルコニウム０．１４重量％）を用いて縦１２７ｍｍ
、横５０８ｍｍ、厚み６．５ｍｍのバッキングプレート
を作製し、冷却水流路部を約３００°Ｃの温度ではんだ
付けした。Example 1 Copper-chromium-zirconium alloy (manufactured by Mitsubishi Metals Co., Ltd.)
'OMC': 99.2% by weight of copper, 0.53% by weight of chromium
, 0.14% by weight of zirconium) with a length of 127 mm.
A backing plate with a width of 508 mm and a thickness of 6.5 mm was prepared, and the cooling water flow path portion was soldered at a temperature of about 300°C.
このバッキングプレートの片面を大気圧とし、その反対
面に真空度Ｉ Ｔｏｒｒ→大気圧→真空度Ｉ Ｔｏｒｒ
→大気圧の繰り返し応力をかけ、反りの変位量を測定し
た。その結果を第１表に示した。One side of this backing plate has atmospheric pressure, and the other side has a vacuum level of I Torr → atmospheric pressure → vacuum level of I Torr.
→We applied repeated stress at atmospheric pressure and measured the amount of warp displacement. The results are shown in Table 1.
また、このバッキングプレートを所定温度まで昇温し、
６０分間保持した後、常温に戻して引張応力を測定した
。その結果を第１図に示した（実線）。In addition, this backing plate is heated to a predetermined temperature,
After holding for 60 minutes, the temperature was returned to room temperature and the tensile stress was measured. The results are shown in Figure 1 (solid line).
比較例１
材質を無酸素鋼としたこと以外は実施例１と同様にして
バッキングプレートを作成し、反りの変位量を測定した
。その結果を第１表に示した。Comparative Example 1 A backing plate was produced in the same manner as in Example 1 except that oxygen-free steel was used as the material, and the amount of warp displacement was measured. The results are shown in Table 1.
第１表より無酸素鋼に比べて本発明の材質で作成したバ
ッキングプレートは変化量が小さく、耐変形性に優れて
いることが明らかである。It is clear from Table 1 that the backing plate made of the material of the present invention has a smaller amount of deformation than oxygen-free steel and has excellent deformation resistance.
また、実施例１と同様にして引張応力を測定し、その結
果を第１図に示した（点線）。Further, the tensile stress was measured in the same manner as in Example 1, and the results are shown in FIG. 1 (dotted line).
第１表
［本発明の効果］
本発明の銅−クロム、銅−ジルコニウムまたは銅−クロ
ム−ジルコニウムを材質とするスパッタリン４゜
グ用バッキングプレートは、銅の有する熱伝導性を損な
うことなく、バッキングプレートとしての熱履歴にも充
分な耐変形性を有するので、バッキングプレートを薄く
しても変形がおこらず、スパッタリング用ターゲットの
破損や、バッキングプレートからの剥離が起こらない。Table 1 [Effects of the present invention] The backing plate for sputtering 4° made of copper-chromium, copper-zirconium or copper-chromium-zirconium of the present invention has the following properties: without impairing the thermal conductivity of copper; Since it has sufficient deformation resistance against thermal history as a backing plate, it will not deform even if the backing plate is thinned, and the sputtering target will not be damaged or peeled off from the backing plate.
すなわち、冷却効率、磁力線効率が向上し、スパッタリ
ングの生産性も向上できるのため工業的に有用である。That is, it is industrially useful because cooling efficiency and magnetic field line efficiency can be improved, and sputtering productivity can also be improved.
第１図は、実施例１および比較例１で作製したバッキン
グプレートの熱履歴による引張応力の変化を示した図で
ある。実線は実施例１の場合、点線は比較例１の場合を
それぞれ示す。FIG. 1 is a diagram showing changes in tensile stress due to thermal history of backing plates produced in Example 1 and Comparative Example 1. The solid line shows the case of Example 1, and the dotted line shows the case of Comparative Example 1.
Claims (1)
．０重量％含有する銅合金からなることを特徴とするス
パッタリング用バッキングプレート。(1) Chromium and/or zirconium from 0.1 to 2
．． A backing plate for sputtering characterized by being made of a copper alloy containing 0% by weight.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13877290A JPH0432564A (en) | 1990-05-29 | 1990-05-29 | Backing plate for sputtering |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13877290A JPH0432564A (en) | 1990-05-29 | 1990-05-29 | Backing plate for sputtering |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0432564A true JPH0432564A (en) | 1992-02-04 |
Family
ID=15229840
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13877290A Pending JPH0432564A (en) | 1990-05-29 | 1990-05-29 | Backing plate for sputtering |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0432564A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102260851A (en) * | 2010-05-26 | 2011-11-30 | 鸿富锦精密工业（深圳）有限公司 | Sputtering carrier |
-
1990
- 1990-05-29 JP JP13877290A patent/JPH0432564A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102260851A (en) * | 2010-05-26 | 2011-11-30 | 鸿富锦精密工业（深圳）有限公司 | Sputtering carrier |
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