JPH04326544A - Equipment and method for inspecting external appearance of wafer - Google Patents

Equipment and method for inspecting external appearance of wafer

Info

Publication number
JPH04326544A
JPH04326544A JP9649291A JP9649291A JPH04326544A JP H04326544 A JPH04326544 A JP H04326544A JP 9649291 A JP9649291 A JP 9649291A JP 9649291 A JP9649291 A JP 9649291A JP H04326544 A JPH04326544 A JP H04326544A
Authority
JP
Japan
Prior art keywords
wafer
integrated circuit
circuit pattern
stage
microscope
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9649291A
Other languages
Japanese (ja)
Other versions
JP2964687B2 (en
Inventor
Kizashi Fujii
藤井 萌
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP9649291A priority Critical patent/JP2964687B2/en
Publication of JPH04326544A publication Critical patent/JPH04326544A/en
Application granted granted Critical
Publication of JP2964687B2 publication Critical patent/JP2964687B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

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  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)

Abstract

PURPOSE:To easily inspect in a short time the deviation of integrated circuit patterns in the wafer surface and an exposure region. CONSTITUTION:A storage device is installed in a control part 6 control- commanding a controller 7 moving a stage 2 mounting a wafer 8. An integrated circuit pattern transferred on the outer side and the central part in the surface of the wafer 8 and an integrated circuit pattern in an exposure region in the surface of the wafer 8 are arbitrarily extracted. Position for each wafer is previously stored by the control part 6, and automatically positioned in the visual field of a microscope in order. Thereby the deviation of integrated circuit patterns are inspected.

Description

【発明の詳細な説明】[Detailed description of the invention]

【0001】0001

【産業上の利用分野】本発明は特にリソグラフィー工程
におけるウェーハ上に多数形成される集積回路パターン
を検査するウェーハ外観検査装置及びその方法に関する
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention particularly relates to a wafer visual inspection apparatus and method for inspecting a large number of integrated circuit patterns formed on a wafer in a lithography process.

【0002】0002

【従来の技術】従来、この種のウェーハ外観検査装置は
、図面には示さないが、ウェーハを搭載するステージと
、キャリアからウェーハをステージに移載する搬送機構
と、ステージに搭載されたウェーハを観察する光学顕微
鏡とにより構成されている。
[Prior Art] Conventionally, although not shown in the drawings, this type of wafer visual inspection apparatus has a stage for mounting a wafer, a transfer mechanism for transferring the wafer from a carrier to the stage, and a transfer mechanism for transferring the wafer mounted on the stage. It consists of an optical microscope for observation.

【0003】このウェーハ外観検査装置でリソグラフィ
ー工程におけるウェーハの外観検査を行う際は、まず、
ステージの操作を作業者の手動によって行ない、ウェー
ハ上に形成された多数の集積回路パターンの中から不特
定に集積回路パターンをウェーハス面内の上部,中央部
,下部,右部,左部より一定数の集積回路パターンを選
び、その集積回路パターンに対して外観検査、及びパタ
ーン目ずれ量の測定が行なっていた。
When performing a wafer appearance inspection in a lithography process using this wafer appearance inspection apparatus, first,
The stage is manually operated by an operator, and an unspecified integrated circuit pattern is uniformly selected from among the large number of integrated circuit patterns formed on the wafer from the top, center, bottom, right, and left of the wafer surface. A number of integrated circuit patterns were selected, and the integrated circuit patterns were inspected for appearance and measured for pattern misalignment.

【0004】0004

【発明が解決しようとする課題】この従来のウェーハ外
観検査装置を用いた外観検査方法では、ウェーハの上部
,下部,中央部,左部及び右部からそれぞれ一集積回路
パターンを選んで測定しているので、ウェーハ面内にお
ける回路パターンの位置ずれ及びパターン縮少度のずれ
は検査出来るが、1回の露光、すなわちワンショットで
複数の集積回路パターンが転写されるウェーハでは、各
集積回路パターン間の傾き及び歪みが測定することが困
難である。もし、これを測定するとなると、ワンショッ
ト内の個々の集積回路パターンを位置決めし、個々の集
積回路パターンの目ずれ量を測定し、ウェーハ面内にお
ける目ずれ量とワンショット内の個々の集積回路パター
ン間の傾き及び歪を推計する必要があり、多大な工数の
浪費するばかりか誤りを引き起すことになる。
[Problems to be Solved by the Invention] In the visual inspection method using this conventional wafer visual inspection apparatus, one integrated circuit pattern is selected and measured from each of the top, bottom, center, left, and right sides of the wafer. Therefore, it is possible to inspect the positional deviation of the circuit pattern and the deviation in the degree of pattern reduction within the wafer surface. However, on a wafer where multiple integrated circuit patterns are transferred in one exposure, that is, in one shot, the difference between each integrated circuit pattern can be inspected. The inclination and distortion of is difficult to measure. If this were to be measured, it would be necessary to position each integrated circuit pattern within one shot, measure the amount of misalignment of each integrated circuit pattern, and measure the amount of misalignment within the wafer plane and the amount of misalignment of each integrated circuit pattern within one shot. It is necessary to estimate the slope and distortion between patterns, which not only wastes a large amount of man-hours but also causes errors.

【0005】本発明の目的は、かかる問題を解消すべく
、ワンショット内の集積回路間の目ずれ及びウェーハ面
内における集積回路パターンの目ずれを短時間で容易に
検査出来るウェーハ外観検査装置及びその方法を提供す
ることである。
SUMMARY OF THE INVENTION In order to solve this problem, it is an object of the present invention to provide a wafer appearance inspection apparatus and a wafer visual inspection apparatus that can easily inspect misalignment between integrated circuits within one shot and misalignment of integrated circuit patterns within a wafer surface in a short time. The purpose is to provide a method for doing so.

【0006】[0006]

【課題を解決するための手段】本発明のウェーハ外観検
査装置は、ウェーハ面を観察する顕微鏡と、ウェーハを
載置するステージと、このステージを移動するコントロ
ーラと、このコントローラを制御する制御部と、前記ウ
ェハー面内にある集積回路パターンの複数の領域をウェ
ーハに対する位置を記憶する記憶部とを備えている。
[Means for Solving the Problems] The wafer appearance inspection apparatus of the present invention includes a microscope for observing the wafer surface, a stage on which the wafer is placed, a controller for moving the stage, and a control unit for controlling the controller. , and a storage unit that stores the positions of a plurality of areas of the integrated circuit pattern within the wafer plane with respect to the wafer.

【0007】本発明のウェーハ外観検査方法は、ウェー
ハ面内に縦横列に複数のパターンの中から任意の集積回
路パターンを抽出するステップと、この抽出される集積
回路パターンの位置を記憶するステップと、順次,顕微
鏡視野内に前記集積回路パターンを位置決めするステッ
プを含んでいる。
The wafer visual inspection method of the present invention includes the steps of extracting an arbitrary integrated circuit pattern from among a plurality of patterns arranged in columns and rows on the wafer surface, and storing the position of the extracted integrated circuit pattern. , sequentially positioning the integrated circuit pattern within a microscope field of view.

【0008】[0008]

【実施例】次に本発明について図面を参照して説明する
DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, the present invention will be explained with reference to the drawings.

【0009】図1は本発明の一実施例を示すウェーハ外
観検査装置のブロック図である。このウェーハ外観検査
装置は、図1に示すように、ウェーハ面にバックミラー
4及びレンズ3を介して光を投射する光源部1とウェー
ハ8より反射光で拡大像を結ぶレンズ3及び3aとを備
える光学顕微鏡と、ウェーハ8を搭載するステージ2と
、ステージ2にウェーハ8を移載する搬送機構5と、ス
テージ2の移動を制御するコントローラ7と、検査を行
うべきパターン領域のウェーハ8面ウェーハの位置を記
憶するとともにコントローラにステージ移動を指令する
制御部6とを有オている。図2は図1のウェーハ外観検
査装置の動作を説明するためのウェーハ面を示す図であ
る。次に、このウェーハ外観検査装置の動作及びウェー
ハ外観検査方法について説明する。最初に外観検査を行
う前の準備作業としてまず、図2に示すように、ウェー
ハ8に形成されるウェーハ8の左端側,中央部,上端側
,右端側及び下端側のワンショット領域10内にある集
積回路パターン9a,9b,9c,9d及び9eを選択
し、制御部6にその座標値を記憶させる。次に、ワンシ
ョットでの露光における目ずれ量を測定するために、ワ
ンショット領域10内における  集積回路パターンを
その領域の右左及び上下にある集積回路パターン11a
,11b,11c及び11dに選び、その座標値を制御
部に記憶させる。
FIG. 1 is a block diagram of a wafer visual inspection apparatus showing an embodiment of the present invention. As shown in FIG. 1, this wafer appearance inspection apparatus includes a light source unit 1 that projects light onto the wafer surface via a rear mirror 4 and a lens 3, and lenses 3 and 3a that form an enlarged image using reflected light from the wafer 8. an optical microscope, a stage 2 on which the wafer 8 is mounted, a transport mechanism 5 for transferring the wafer 8 onto the stage 2, a controller 7 for controlling the movement of the stage 2, and 8 wafers in the pattern area to be inspected. It has a control section 6 which stores the position of the stage and instructs the controller to move the stage. FIG. 2 is a diagram showing a wafer surface for explaining the operation of the wafer visual inspection apparatus shown in FIG. Next, the operation of this wafer visual inspection apparatus and the wafer visual inspection method will be explained. As a preparatory work before performing the initial visual inspection, first, as shown in FIG. Certain integrated circuit patterns 9a, 9b, 9c, 9d, and 9e are selected and their coordinate values are stored in the control section 6. Next, in order to measure the amount of misalignment in one-shot exposure, the integrated circuit patterns in the one-shot area 10 are compared to the integrated circuit patterns 11a on the right, left, top and bottom of that area.
, 11b, 11c, and 11d, and their coordinate values are stored in the control unit.

【0010】このように準備されたウェーハ外観検査装
置で、ウェーハを検査するには、まず、被検査ウェーハ
を収納したウェーハキャリアを搬送開始位置へ載置する
。ここで、ウェーハキャリア内のウェーハ8は搬送機構
5によって1枚ずつ自動的にステージ2上へと搬送され
る。次に、各品種ごとに前もって制御部6に記憶されて
いる集積回路パターン9a,9b,9c,9d及び9e
の座標値によりウェーハ8は顕微鏡視野内にコントロー
ラ7で位置決めされ、順次、顕微鏡によって目ずれを測
定し、ウェーハ8面内の集積回路パターンの目ずれを検
査する。次に、制御部6に記憶された集積回路パターン
11a,11b,11c及び11dの座標値を読み出し
、コントローラ7でステージ2を移動させ、集積回路パ
ターン11a,11b,11c及び11dを顕微鏡視野
内に位置決めし、順次、目ずれ量を測定し、ワンショッ
ト領域内における集積回路パターンの検査を行う。
[0010] In order to inspect a wafer using the wafer visual inspection apparatus prepared in this manner, first, a wafer carrier containing a wafer to be inspected is placed at a transport start position. Here, the wafers 8 in the wafer carrier are automatically transferred onto the stage 2 one by one by the transfer mechanism 5. Next, integrated circuit patterns 9a, 9b, 9c, 9d, and 9e stored in advance in the control unit 6 for each product type.
The wafer 8 is positioned within the field of view of the microscope by the controller 7 based on the coordinate values of , and the misalignment of the integrated circuit patterns within the plane of the wafer 8 is inspected by sequentially measuring the misalignment using the microscope. Next, the coordinate values of the integrated circuit patterns 11a, 11b, 11c, and 11d stored in the control unit 6 are read out, and the stage 2 is moved by the controller 7, so that the integrated circuit patterns 11a, 11b, 11c, and 11d are placed within the field of view of the microscope. After positioning, the amount of misalignment is sequentially measured, and the integrated circuit pattern within the one-shot area is inspected.

【0011】検査が終了したウェーハ8は、搬送機構5
によりウェーハキャリアに収納され、次のウェーハ8が
ステージ2に載置される。このように、順次、ウェーハ
が載置され、自動的に検査すべき集積回路パターンが顕
微鏡視野内に位置決めされ、作業者は単に顕微鏡で観察
することにより、ウェーハ面内の集積回路パターンの目
ずれ及びワンショット内の集積回路パターンの目ずれを
検査することが出来る。
The wafer 8 that has been inspected is transferred to the transport mechanism 5.
The wafer 8 is stored in the wafer carrier, and the next wafer 8 is placed on the stage 2. In this way, the wafers are placed one after another, the integrated circuit patterns to be inspected are automatically positioned within the field of view of the microscope, and the operator can check the misalignment of the integrated circuit patterns within the plane of the wafer by simply observing with the microscope. It is also possible to inspect misalignment of integrated circuit patterns within one shot.

【0012】0012

【発明の効果】以上説明したように本発明は、ウェーハ
を搭載するステージを移動させるコントローラを指令制
御する制御部に記憶部を設け、ウェーハ面内の外側及び
中央に転写される集積回路パターンと一露光領域内にあ
る外側の集積回路パターンをあらかじめ抽出し、前記記
憶部に前記集積回路パターンの位置を記憶させることに
よって、ウェーハ面内及び一露光領域内における集積回
路パターンの目ずれを短時間で容易に検査出来るウェー
ハ外観検査装置が得られるという効果がある。
Effects of the Invention As explained above, the present invention provides a storage section in the control section that commands and controls the controller that moves the stage on which the wafer is mounted, and the integrated circuit pattern to be transferred to the outside and center of the wafer surface. By extracting the outer integrated circuit pattern within one exposure area in advance and storing the position of the integrated circuit pattern in the storage unit, the misalignment of the integrated circuit pattern within the wafer surface and within one exposure area can be prevented for a short time. This has the effect of providing a wafer appearance inspection device that can easily inspect wafers.

【図面の簡単な説明】[Brief explanation of drawings]

【図1】本発明の一実施例を示すウェーハ外観検査装置
のブロック図である。
FIG. 1 is a block diagram of a wafer visual inspection apparatus showing an embodiment of the present invention.

【図2】図1のウェーハ外観検査装置の動作を説明する
ためのウェーハ面を示す図である。
FIG. 2 is a diagram showing a wafer surface for explaining the operation of the wafer visual inspection apparatus of FIG. 1;

【符号の説明】[Explanation of symbols]

1    光源部 2    ステージ 3,3a    レンズ 4    ハーフミラー 5    搬送機構 6    制御部 7    コントローラ 8    ウェーハ 1 Light source section 2 Stage 3,3a Lens 4 Half mirror 5 Conveyance mechanism 6 Control section 7 Controller 8 Wafer

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】  ウェーハ面を観察する顕微鏡と、ウェ
ーハを載置するステージと、このステージを移動するコ
ントローラと、このコントローラを制御する制御部と、
前記ウェハー面内にある集積回路パターンの複数の領域
をウェーハに対する位置を記憶する記憶部とを備えるこ
とを特徴とするウェーハ外観検査装置。
1. A microscope for observing a wafer surface, a stage for placing a wafer, a controller for moving this stage, and a control section for controlling this controller.
A wafer visual inspection apparatus comprising: a storage unit that stores positions of a plurality of areas of integrated circuit patterns within the wafer plane with respect to the wafer.
【請求項2】  ウェーハ面内に縦横列に複数のパター
ンの中から任意の集積回路パターンを抽出するステップ
と、この抽出される集積回路パターンの位置を記憶する
ステップと、順次,顕微鏡視野内に前記集積回路パター
ンを位置決めするステップを含んでいることを特徴とす
るウェーハ外観検査方法。
2. A step of extracting an arbitrary integrated circuit pattern from among a plurality of patterns arranged in columns and rows on the wafer surface, a step of storing the position of the extracted integrated circuit pattern, and sequentially placing the integrated circuit pattern within the field of view of the microscope. A wafer appearance inspection method comprising the step of positioning the integrated circuit pattern.
JP9649291A 1991-04-26 1991-04-26 Wafer appearance inspection apparatus and method Expired - Fee Related JP2964687B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9649291A JP2964687B2 (en) 1991-04-26 1991-04-26 Wafer appearance inspection apparatus and method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9649291A JP2964687B2 (en) 1991-04-26 1991-04-26 Wafer appearance inspection apparatus and method

Publications (2)

Publication Number Publication Date
JPH04326544A true JPH04326544A (en) 1992-11-16
JP2964687B2 JP2964687B2 (en) 1999-10-18

Family

ID=14166585

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9649291A Expired - Fee Related JP2964687B2 (en) 1991-04-26 1991-04-26 Wafer appearance inspection apparatus and method

Country Status (1)

Country Link
JP (1) JP2964687B2 (en)

Also Published As

Publication number Publication date
JP2964687B2 (en) 1999-10-18

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