JPH0433147B2 - - Google Patents
Info
- Publication number
- JPH0433147B2 JPH0433147B2 JP58101001A JP10100183A JPH0433147B2 JP H0433147 B2 JPH0433147 B2 JP H0433147B2 JP 58101001 A JP58101001 A JP 58101001A JP 10100183 A JP10100183 A JP 10100183A JP H0433147 B2 JPH0433147 B2 JP H0433147B2
- Authority
- JP
- Japan
- Prior art keywords
- green
- blue
- dye
- red
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/30—Coatings
- H10F77/306—Coatings for devices having potential barriers
- H10F77/331—Coatings for devices having potential barriers for filtering or shielding light, e.g. multicolour filters for photodetectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
Landscapes
- Light Receiving Elements (AREA)
- Optical Filters (AREA)
- Solid State Image Pick-Up Elements (AREA)
Description
【発明の詳細な説明】
(技術分野)
本発明は青色、緑色及び赤色の3色識別用のカ
ラーセンサに関するものである。DETAILED DESCRIPTION OF THE INVENTION (Technical Field) The present invention relates to a color sensor for three-color discrimination of blue, green, and red.
(従来技術)
従来のカラーセンサは一般に認識すべき対象物
体からの光をプリズムや光学フイルタを用いて青
色、緑色、赤色の3色帯に分光し、これらの3色
帯に3ケの受光センサを対応させる構成として識
別するものであつた。(Prior art) Conventional color sensors generally separate light from an object to be recognized into three color bands of blue, green, and red using a prism or optical filter, and three light receiving sensors are used for each of these three color bands. It was identified as a configuration that corresponds to
そして近年、所謂CCDセンサのような2次元
受光センサが実用化され、これらに青色、緑色、
及び赤色の色素を集積化したカラーフイルタアレ
イを結合し2次元カラーセンサを構成する方法が
試みられている。 In recent years, two-dimensional light receiving sensors such as so-called CCD sensors have been put into practical use, and these include blue, green,
Attempts have been made to construct a two-dimensional color sensor by combining color filter arrays with integrated red pigments.
かかるカラーセンサは、対象物体光を分光する
カラーフイルタと受光センサとを結合したもので
あるが、特に前記カラーフイルタの作成工程が非
常に複雑であり、又該受光センサとカラーフイル
タとの光学的結合には著しく高精度が要求される
等量産性を妨げ更にコスト高を招く等の欠点があ
つた。 Such a color sensor combines a color filter that separates target object light and a light-receiving sensor, but the process of creating the color filter is particularly complicated, and the optical connection between the light-receiving sensor and the color filter is extremely complicated. The bonding has drawbacks such as hindering mass production, which requires extremely high precision, and further increasing costs.
(発明の目的)
ここに本発明者等はかかる欠点を解消すべく多
数の試験研究を重ねた結果、上記青色、緑色及び
赤色の三原色フイルタ機能が、受光ダイオードを
構成する特定の色素による有機半導体薄膜の積層
組合わせによつて実現され得ること、そしてかか
る受光ダイオードによりカラーフイルタとの結合
を不用とする等上記コスト上の問題を解決し安価
で且つ集積化の容易なカラーセンサを提供し得る
ことを見出しこの発明に到達したものである。(Purpose of the Invention) As a result of numerous tests and studies aimed at solving these drawbacks, the present inventors have discovered that the three primary color filter functions of blue, green, and red can be achieved by using an organic semiconductor using a specific pigment that constitutes the light receiving diode. This can be realized by a laminated combination of thin films, and the above-mentioned cost problem can be solved by eliminating the need for coupling with a color filter by using such a light receiving diode, and it is possible to provide a color sensor that is inexpensive and easy to integrate. This is what led us to discover this and arrive at this invention.
(発明の構成)
即ち本発明は、可視領域で異なる吸収スペクト
ルを有する有機半導体薄膜と、該有機半導体とは
電気伝導形の異なる半導体薄膜又は金属薄膜とに
よつて形成されるヘテロpnダイオード又はシヨ
ツトキダイオードを同一基板上に構成した青色、
緑色及び赤色の三色検出用カラーセンサであつ
て、前記有機半導体薄膜として、青色:メロシア
ニン系色素、緑色:メロシアニン系色素及び
の積層、更に赤色:フタロシアニン系顔料及び
上記色素、の積層により構成してなるカラー
センサである。(Structure of the Invention) That is, the present invention provides a heteropn diode or a semiconductor formed by an organic semiconductor thin film having different absorption spectra in the visible region and a semiconductor thin film or metal thin film having a different electrical conductivity type from the organic semiconductor. Blue color with Tsutoki diodes configured on the same substrate.
A color sensor for detecting three colors of green and red, wherein the organic semiconductor thin film is composed of a stack of a merocyanine pigment for blue, a merocyanine pigment for green, and a stack of a phthalocyanine pigment for red and the above pigment. This is a color sensor.
先ずここで後記詳述する色素(又は顔料)によ
る半導体薄膜の選択並びにこれらの積層構造化に
よつて三原色即ち青色、緑色及び赤色のフイルタ
機能を付与し得ることに関して説明する。 First, it will be explained that filter functions of the three primary colors, that is, blue, green, and red, can be imparted by selecting a semiconductor thin film using dyes (or pigments) and structuring them in layers, which will be described in detail later.
第1図には本発明で用いられる下記式(1)〜(3)で
示されるメロシアニン色素及び、及びフタロ
シアニン顔料による有機半導体薄膜の可視領域で
の光吸収スペクトルを表わしたもので、図中1は
前述のメロシアニン色素、2は同色素、3は
具体的にマグネシウムフタロシアニンのそれであ
る。 Figure 1 shows the light absorption spectrum in the visible region of organic semiconductor thin films made of merocyanine dyes and phthalocyanine pigments represented by the following formulas (1) to (3) used in the present invention. is the aforementioned merocyanine dye, 2 is the same dye, and 3 is specifically that of magnesium phthalocyanine.
(式中MはMg、Al、Ga、In、XはCl、Br、I
を表わす)
そしてこれらの有機半導体は金属とのシヨツト
キバリヤダイオードを形成した場合、その光感度
スペクトルは光吸収スペクトルと一致することが
知られている。 (In the formula, M is Mg, Al, Ga, In, X is Cl, Br, I
) It is known that when these organic semiconductors form a shot barrier diode with a metal, the photosensitivity spectrum matches the light absorption spectrum.
第1図からメロシアニン色素は青色の光吸収
特性を持つていることが明らかであり、該色素
膜単独にて青色のフイルタ機能を奏する。 It is clear from FIG. 1 that the merocyanine dye has blue light absorption characteristics, and the dye film alone functions as a blue filter.
次にメロシアニン色素は、青色と緑色の両色
帯に光吸収特性を示すが、第2図aに示すように
該色素21と色素22とを積層させ、白色光
20を照射すると色素21のフイルタ作用によ
り該色素22による光吸収スペクトルは第2図
bに示す如く緑色帯のみの光吸収スペクトルに整
形される。 Next, the merocyanine dye exhibits light absorption characteristics in both blue and green color bands, but when the dye 21 and the dye 22 are layered and irradiated with white light 20 as shown in FIG. 2a, the filter of the dye 21 As a result of this action, the light absorption spectrum of the dye 22 is shaped into a light absorption spectrum of only a green band, as shown in FIG. 2b.
更に一般にフタロシアニン系有機半導体は、緑
色、赤色及び近赤外帯にわたり巾広い光吸収スペ
クトルを示すことが知られているがその一例の上
記マグネシウムフタロシアニンの光吸収スペクト
ルは、第1図3に示されている。そこで同様に第
3図bの如く上記メロシアニン色素21、色素
22、マグネシウムフタロシアニン33を積層
させ、白色光30を照射させたところ同図bのよ
うに緑色帯成分は除去され赤色帯と近赤外帯とに
整形される。この近赤外帯吸収特性は可視領域で
透明で近赤外にて吸収性を有するフイルタを使用
して除去すれば良い。 Furthermore, it is generally known that phthalocyanine-based organic semiconductors exhibit a wide optical absorption spectrum over the green, red, and near-infrared bands, and the optical absorption spectrum of the above-mentioned magnesium phthalocyanine, as an example, is shown in Figure 1.3. ing. Therefore, when the merocyanine dye 21, dye 22, and magnesium phthalocyanine 33 are laminated in the same manner as shown in FIG. 3b and white light 30 is irradiated, the green band component is removed and the red band and near-infrared component are removed as shown in FIG. 3b. It is shaped into an obi. This near-infrared absorption characteristic can be removed by using a filter that is transparent in the visible region and absorbent in the near-infrared.
以上詳述したようにメロシアニン色素により
青色帯光を、同メロシアニン色素と色素との
積層で緑色帯光を、更にこれら色素と及びマ
グネシウムフタロシアニンの積層により赤色帯光
を夫々吸収させるように、これら色素等による有
機半導体の層構造を作り、色識別が可能であるこ
とが明らかである。 As detailed above, the merocyanine dye absorbs blue band light, the stack of the merocyanine dye and the dye absorbs green band light, and the stack of these dyes and magnesium phthalocyanine absorbs red band light, respectively. It is clear that color discrimination is possible by creating a layered structure of organic semiconductors.
(実施態様)
次に本発明を具体的に実施態様により説明す
る。(Embodiments) Next, the present invention will be specifically explained by embodiments.
第4図は本発明によるカラーセンサの構造を示
す断面図であり、透明電極46が形成された透明
基板47上に、後記する青色感光素子401、緑
色感光素子402、及び赤色感光素子403が
夫々公知の蒸着法による薄膜形成法、及び写真食
刻法更に選択エツチング法等を用いて形成されて
いる。図中21は色素、22は色素、更に3
3はフタロシアニン、44はZnO n型半導体
(又はAl)、45は電極、40は認識すべき物体
光の入射方向を示し、更に48は可視領域で透明
で近赤外線を吸収するフイルタであり、かかるフ
イルタの一例として、第5図に示すような光透過
特性を有する市販の色ガラスフイルタが利用可能
である。 FIG. 4 is a cross-sectional view showing the structure of a color sensor according to the present invention, in which a blue photosensitive element 401, a green photosensitive element 402, and a red photosensitive element 403, which will be described later, are provided on a transparent substrate 47 on which a transparent electrode 46 is formed, respectively. It is formed using a thin film formation method using a known vapor deposition method, a photolithography method, a selective etching method, and the like. In the figure, 21 is a pigment, 22 is a pigment, and 3
3 is a phthalocyanine, 44 is a ZnO n-type semiconductor (or Al), 45 is an electrode, 40 is the incident direction of the object light to be recognized, and 48 is a filter that is transparent in the visible region and absorbs near infrared rays. As an example of the filter, a commercially available colored glass filter having light transmission characteristics as shown in FIG. 5 can be used.
本発明の受光機構について上記の赤色感光素子
403を例にとり説明する。メロシアニン色素
21、色素22及びフタロシアニン層33はす
べてp型半導体であり、44はZnOによるn型の
半導体である。該ZnO半導体はAl等の金属であ
つても良いが公知の如く、光電流に寄与するのは
pn接合近傍又はシヨツトバリヤ近傍での光吸収
によつて発生したホールおよび電子のキヤリヤで
ある。 The light receiving mechanism of the present invention will be explained by taking the above-mentioned red photosensitive element 403 as an example. The merocyanine dye 21, the dye 22, and the phthalocyanine layer 33 are all p-type semiconductors, and 44 is an n-type semiconductor made of ZnO. The ZnO semiconductor may be a metal such as Al, but as is known, it is the metal that contributes to the photocurrent.
These are carriers of holes and electrons generated by light absorption near the pn junction or shot barrier.
従つて該44がZnO半導体の場合、ZnOは可視
領域で透明であることから、光電流に寄与するの
はフタロシアニン層33側で発生したキヤリヤで
あり、該フタロシアニン43の膜厚をpn接合の
p領域の空乏層巾と同程度に選んでおけば、前記
色素22および同色素42内で発生したキヤ
リヤは光電流にほとんど寄与せず光電流波長特性
はフタロシアニン内の光吸収量特性と一致する。
従つて色素21および色素22はフイルタと
してのみ作用することになる。 Therefore, when the 44 is a ZnO semiconductor, since ZnO is transparent in the visible region, it is the carrier generated on the phthalocyanine layer 33 side that contributes to the photocurrent, and the film thickness of the phthalocyanine 43 is If the width of the depletion layer is selected to be approximately the same as the depletion layer width of the region, carriers generated within the dye 22 and the dye 42 will hardly contribute to the photocurrent, and the photocurrent wavelength characteristics will match the light absorption amount characteristics within the phthalocyanine.
Therefore, dye 21 and dye 22 act only as a filter.
又、上記44にて示す層をAl等としたシヨツ
トキバリヤを形成する場合も、光電流に寄与する
のは有機半導体33の空乏層内で発生したキヤリ
ヤであることは公知であるから、この場合も交電
流波長特性はフタロシアニン層33内の光吸収
(光学密度)特性と一致する。 Furthermore, when forming a shot barrier using Al or the like as the layer shown in 44 above, it is well known that carriers generated within the depletion layer of the organic semiconductor 33 contribute to the photocurrent. The alternating current wavelength characteristics match the light absorption (optical density) characteristics within the phthalocyanine layer 33.
上記青色感光素子401および緑色感光素子4
02に関しても、それぞれの光電流波長特性は同
色素21及び色素22内での光吸収(光学密
度)と一致することが同様にして明らかである。 The blue photosensitive element 401 and the green photosensitive element 4
It is similarly clear that the photocurrent wavelength characteristics of the dyes 02 and 22 correspond to the light absorption (optical density) within the dyes 21 and 22.
以上のことからこの実施態様によるカラーセン
サの吸収特性は第6図に示す通りであり、図中6
1は青色感光素子、62は緑色感光素子及び63
は赤色感光素子の夫々感度特性を表わしている。 From the above, the absorption characteristics of the color sensor according to this embodiment are as shown in FIG.
1 is a blue photosensitive element, 62 is a green photosensitive element, and 63
represent the respective sensitivity characteristics of the red light-sensitive element.
このようにかかる実施態様の如く構成すること
により青色、緑色及び赤色の3原色を分光するた
めの光学フイルタを用いることなく、同一基板上
において上記三原色を識別する各感光素子を構成
することができる。 By configuring as in this embodiment, it is possible to configure each photosensitive element for identifying the three primary colors on the same substrate without using an optical filter for separating the three primary colors of blue, green, and red. .
第7図は他の実施態様を示すものであり、上記
の各青色、緑色及び赤色の受光素子を一組とし
て、これらを同一基板707に2次元的に配列し
たものである。 FIG. 7 shows another embodiment, in which the blue, green, and red light-receiving elements described above are arranged two-dimensionally on the same substrate 707 as a set.
かかるカラーセンサは蒸着膜にて構成されるこ
とから大面積カラーセンサが安価に得られるとい
う利点がある。 Since such a color sensor is constructed of a vapor-deposited film, it has the advantage that a large-area color sensor can be obtained at low cost.
(発明の効果)
本発明は以上の如くpn接合又はシヨツトキバ
リヤダイオードを構成する上記特性の有機半導体
薄膜を選択して用い又これらを組合わせた積層構
造としたことによつて3原色に対する光学的フイ
ルタ機能を具備させることができ、従来の如くカ
ラーフイルタを併用することなく物体光のカラー
検出を可能ならしめたものであり、しかも本発明
構成によれば特に蒸着膜にて形成されるので製作
上の問題が解消され特に大面積、高集積のライン
又は面センサが安価に得られる等その工業的効果
は極めて高い。(Effects of the Invention) As described above, the present invention provides an optical system for three primary colors by selecting and using organic semiconductor thin films having the above characteristics constituting a pn junction or a shotgun barrier diode, and by forming a laminated structure combining them. The object light can be equipped with a target filter function, and it is possible to detect the color of the object light without using a conventional color filter. Moreover, according to the configuration of the present invention, it is formed of a vapor-deposited film. It has extremely high industrial effects, such as solving manufacturing problems and making it possible to obtain particularly large-area, highly integrated line or surface sensors at low cost.
第1図はメロシアニン色素、及び同色素更
にマグネシウムフタロシアニンの光吸収特性図、
第2図aは同色素と色素との積層構造断面
図、第2図bは同組合せの光吸収特性図、第3図
aは同色素、及びマグネシウムフタロシアニ
ン薄膜積層構造断面図、第3図bは同光吸収特性
図、第4図は本発明の一実施態様品の構造断面
図、第5図は市販近赤外線カツトフイルタの透過
率特性図、第6図は本発明のカラーフイルタの光
感度特性図、第7図は本発明におけるカラーセン
サを2次元配列した他の態様を表わす平面図であ
る。
21……メロシアニン色素、22……同色素
、33……フタロシアニン顔料、20,30,
40……光、44……ZnO n型半導体、45…
…電極、47,707……透明基板、401,4
02,403……青色、緑色及び赤色各感光素
子。
Figure 1 is a diagram of the light absorption characteristics of merocyanine dye and the same dye as well as magnesium phthalocyanine.
Figure 2a is a cross-sectional view of the laminated structure of the same dye and dye, Figure 2b is a light absorption characteristic diagram of the same combination, Figure 3a is a cross-sectional view of the laminated structure of the same dye and magnesium phthalocyanine thin film, Figure 3b 4 is a structural sectional view of an embodiment of the present invention, FIG. 5 is a transmittance characteristic diagram of a commercially available near-infrared cut filter, and FIG. 6 is a photosensitivity characteristic of the color filter of the present invention. 7 are plan views showing other embodiments in which color sensors are two-dimensionally arranged according to the present invention. 21...merocyanine pigment, 22...same pigment, 33...phthalocyanine pigment, 20,30,
40...light, 44...ZnO n-type semiconductor, 45...
...Electrode, 47,707...Transparent substrate, 401,4
02,403...Blue, green, and red photosensitive elements.
Claims (1)
機半導体薄膜と、該有機半導体とは電気伝導形の
異なる半導体薄膜又は金属薄膜とによつて形成さ
れるヘテロpnダイオード又はシヨツトキダイオ
ードを同一基板上に構成した青色、緑色及び赤色
の三色検出用カラーセンサであつて、前記有機半
導体薄膜として、青色:メロシアニン系色素、
緑色:メロシアニン系色素及びの積層、更に
赤色:フタロシアニン系顔料及び上記色素、
の積層により構成してなるカラーセンサ。1 A heteropn diode or a Schottky diode formed by an organic semiconductor thin film having different absorption spectra in the visible region and a semiconductor thin film or metal thin film having a different electrical conductivity type from the organic semiconductor is constructed on the same substrate. A color sensor for detecting three colors of blue, green, and red, wherein the organic semiconductor thin film includes: blue: merocyanine dye;
Green: merocyanine pigment and lamination; red: phthalocyanine pigment and the above pigment;
A color sensor composed of laminated layers.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58101001A JPS59227171A (en) | 1983-06-08 | 1983-06-08 | Color sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58101001A JPS59227171A (en) | 1983-06-08 | 1983-06-08 | Color sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59227171A JPS59227171A (en) | 1984-12-20 |
| JPH0433147B2 true JPH0433147B2 (en) | 1992-06-02 |
Family
ID=14289028
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58101001A Granted JPS59227171A (en) | 1983-06-08 | 1983-06-08 | Color sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59227171A (en) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0777273B2 (en) * | 1986-12-24 | 1995-08-16 | キヤノン株式会社 | Switching element and driving method thereof |
| JPH0335566A (en) * | 1989-06-30 | 1991-02-15 | Konica Corp | Photoelectric conversion element |
| JP2756712B2 (en) * | 1989-09-25 | 1998-05-25 | コニカ株式会社 | Photoelectric conversion power generation element |
| JP2756711B2 (en) * | 1989-09-25 | 1998-05-25 | コニカ株式会社 | Photoelectric conversion power generation element |
| CA2319550A1 (en) | 1998-02-02 | 1999-08-05 | Uniax Corporation | Image sensors made from organic semiconductors |
| DE102005043918B4 (en) * | 2005-05-30 | 2014-12-04 | Osram Opto Semiconductors Gmbh | Detector arrangement and method for determining spectral components in a radiation incident on a detector arrangement |
| JP2008091694A (en) * | 2006-10-03 | 2008-04-17 | Seiko Electric Co Ltd | Organic semiconductor photodetector |
| DE102007012115A1 (en) | 2006-11-30 | 2008-06-05 | Osram Opto Semiconductors Gmbh | radiation detector |
| JP2016170380A (en) * | 2015-03-09 | 2016-09-23 | 王子ホールディングス株式会社 | Glass scattering prevention film |
| JP6590308B2 (en) * | 2015-07-27 | 2019-10-16 | パナソニックIpマネジメント株式会社 | Light cut filter and lighting fixture |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CH589447A5 (en) * | 1975-03-14 | 1977-07-15 | Eschmann Peter | |
| FR2319381A2 (en) * | 1975-07-29 | 1977-02-25 | Yardney Co | ORTHOPEDIC DEVICE |
| JPS5913216B2 (en) * | 1978-01-25 | 1984-03-28 | 三菱レイヨン株式会社 | Fixing material for orthopedics |
| CA1142692A (en) * | 1978-02-24 | 1983-03-08 | Union Carbide Corporation | Orthopedic devices, materials and methods |
-
1983
- 1983-06-08 JP JP58101001A patent/JPS59227171A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59227171A (en) | 1984-12-20 |
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