JPH04335202A - Production of vertical magnetic recording and reproducing thin-film head - Google Patents

Production of vertical magnetic recording and reproducing thin-film head

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Publication number
JPH04335202A
JPH04335202A JP13545791A JP13545791A JPH04335202A JP H04335202 A JPH04335202 A JP H04335202A JP 13545791 A JP13545791 A JP 13545791A JP 13545791 A JP13545791 A JP 13545791A JP H04335202 A JPH04335202 A JP H04335202A
Authority
JP
Japan
Prior art keywords
film
magnetic
al2o3
main
polishing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13545791A
Other languages
Japanese (ja)
Inventor
Toshiaki Wada
和田 俊朗
Hiroaki Minami
宏明 南
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Proterial Ltd
Original Assignee
Sumitomo Special Metals Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Special Metals Co Ltd filed Critical Sumitomo Special Metals Co Ltd
Priority to JP13545791A priority Critical patent/JPH04335202A/en
Publication of JPH04335202A publication Critical patent/JPH04335202A/en
Pending legal-status Critical Current

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Abstract

PURPOSE:To decrease the pole recession of a sliding surface and to improve head characteristics by controlling the Al/Ar atomic weight ratio of an Al2O3 film which is a head protective film on a main magnetic pole film to a specific range. CONSTITUTION:The characteristic hardness of the Al2O3 film which is the head protective film 9 to be formed on the main magnetic pole film 8 is adjusted by forming the Al2O3 film 9 having the Al/Ar atomic weight ratio = 2.8 to 2.9 under sputtering conditions under which 80 to 160V negative bias voltage impressed to a sputtering substrate side is impressed. Consequently, the Al2O3 film has the characteristic to allow easy polishing by mechanochemical polishing and its hardness is lowered. The polishing rates of the main magnetic pole film 8 and the Al2O3 film are substantially equal at the time of mechanochemically polishing the end faces of the laminated layers and, therefore, the recessed parts (pole recession) of the main magnetic pole part of the sliding surface facing a recording medium are drastically decreased and the recording and reproducing characteristics are greatly improved.

Description

【発明の詳細な説明】[Detailed description of the invention]

【0001】0001

【産業上の利用分野】この発明は、電算機用、テープ用
、映像記録用などの垂直磁気記録再生薄膜ヘッドの改良
に係り、保護膜の成膜時に特定の負のバイアス電圧でス
パッタリングして特定性状、硬度を有するAl2O3保
護膜を成膜し、磁性基板を所要寸法に切断後にメカノケ
ミカル研摩して積層端面の所要位置に主磁極を露出させ
てポールリセッションを減少させて、薄膜ヘッドの記録
特性の改善向上を図った垂直磁気記録再生薄膜ヘッドの
製造方法に関する。
[Industrial Application Field] This invention relates to the improvement of perpendicular magnetic recording/reproducing thin film heads for computers, tapes, video recording, etc., and involves sputtering with a specific negative bias voltage when forming a protective film. An Al2O3 protective film with specific properties and hardness is formed, the magnetic substrate is cut into the required dimensions, and then mechanochemically polished to expose the main magnetic pole at a desired position on the end face of the laminated layer to reduce pole recession, thereby achieving recording in the thin film head. The present invention relates to a method of manufacturing a perpendicular magnetic recording/reproducing thin film head with improved characteristics.

【0002】0002

【従来の技術】一般に、垂直磁気記録再生薄膜ヘッド(
以下、薄膜ヘッドという)は、磁気回路が微小であるこ
と、高透磁率、高飽和磁束密度の磁性薄膜を用いるとい
う点で、磁気記録の高密度化に適しており、半導体テク
ノロジーに基づく製造プロセスで製造されるため、高精
度の磁気ヘッドを低コストで製造可能であり、今後、垂
直磁気ヘッドの主流となるものと考えられる。
[Prior Art] Generally, perpendicular magnetic recording/reproducing thin film heads (
Thin-film heads (hereinafter referred to as thin-film heads) are suitable for high-density magnetic recording because their magnetic circuits are minute and they use magnetic thin films with high magnetic permeability and high saturation magnetic flux density, and their manufacturing process is based on semiconductor technology. Since this type of magnetic head is manufactured using a high-precision magnetic head, it is possible to manufacture a high-precision magnetic head at low cost, and it is thought that it will become the mainstream of perpendicular magnetic heads in the future.

【0003】垂直磁気記録再生薄膜ヘッドは、磁性基板
上に多数個の薄膜ヘッドパターンを一度に成膜形成した
後、この磁性基板を分割形成して個々のヘッドチップに
加工すべく、下記工程にて製造されている。
[0003] A perpendicular magnetic recording/reproducing thin film head involves the following steps in order to form a large number of thin film head patterns on a magnetic substrate at once, and then to divide the magnetic substrate and process it into individual head chips. Manufactured by

【0004】すなわち、この発明による垂直磁気記録再
生薄膜ヘッドの製造工程を示す第1図に基づいて説明す
ると、まず、図1のAに示す如く、 <1>Ni−Zn系またはMn−Zn系フェライトの磁
性基板1の一主面に、所定間隔で複数の主溝部2を所要
パターンにて配設し、各溝部2にガラス、SiO2、A
l2O3、チタン酸バリウム等の非磁性材3を溶着法、
スパッタリング法等にて充填し、その後、磁性基板1の
前記溝部2を設けた主面に、メカノケミカル研摩を施す
That is, the manufacturing process of the perpendicular magnetic recording/reproducing thin film head according to the present invention will be explained based on FIG. 1. First, as shown in FIG. A plurality of main grooves 2 are arranged in a desired pattern at predetermined intervals on one main surface of a ferrite magnetic substrate 1, and each groove 2 is filled with glass, SiO2, A
Welding method of non-magnetic material 3 such as l2O3, barium titanate, etc.
After filling by sputtering or the like, the main surface of the magnetic substrate 1 on which the grooves 2 are provided is subjected to mechanochemical polishing.

【0005】図1のBに示す如く、 <2>磁性基板1の前記研摩面に、Au、Cu、Cr、
Al等からなる薄膜導体コイル4をスパッタリング法、
真空蒸着法にて形成する。なお、前記磁性基板がMn−
Zn系フェライトの場合、薄膜導体コイル形成前に絶縁
層を設ける。
As shown in FIG. 1B, <2> Au, Cu, Cr,
A thin film conductor coil 4 made of Al etc. is sputtered,
Formed by vacuum evaporation method. Note that the magnetic substrate is Mn-
In the case of Zn-based ferrite, an insulating layer is provided before forming the thin film conductor coil.

【0006】図1のCに示す如く、 <3>この薄膜導体コイル4層と後に被着する厚膜主磁
極膜7との電気的絶縁のために、SiO2、Al2O3
等の無機酸化膜あるいはポリイミド等の有機膜からなる
層間絶縁被膜5を形成する。
As shown in FIG. 1C, <3> For electrical insulation between the four thin film conductor coil layers and the thick main pole film 7 to be deposited later, SiO2, Al2O3
An interlayer insulating film 5 made of an inorganic oxide film such as or an organic film such as polyimide is formed.

【0007】図2のAに示す如く、 <4>前記薄膜導体コイル(4)による層間絶縁被膜(
5)の凹凸面を除去するため、ダイヤモンド研摩等の精
密研摩あるいはエッチバック法を施して、500Å以下
に平坦化する。
As shown in FIG. 2A, <4> An interlayer insulation coating (
In order to remove the uneven surface of 5), precision polishing such as diamond polishing or an etch-back method is applied to flatten the surface to 500 Å or less.

【0008】図2のBに示す如く、 <5>後工程にて被着する厚膜主磁極膜7と磁性基板1
を接続するためのリターンパス部6を、前記層間絶縁被
膜5に、イオンエッチング、ケミカルエッチング等の方
法にて形成する。
As shown in FIG. 2B, <5> Thick film main pole film 7 and magnetic substrate 1 to be deposited in a subsequent process.
A return path portion 6 for connecting is formed in the interlayer insulating film 5 by a method such as ion etching or chemical etching.

【0009】図2のCに示す如く、 <6>層間絶縁被膜5面及びリターンパス部6の磁性基
板1面上に、パーマロイ、センダスト等のFe系合金あ
るいはアモルファス等からなる厚膜主磁極膜7をスパッ
タリング法、蒸着法、めっき法等にて被着形成し、パタ
ーン化する。
As shown in FIG. 2C, <6> A thick main pole film made of an Fe-based alloy such as Permalloy or Sendust, or amorphous material is formed on the five surfaces of the interlayer insulating film and the one surface of the magnetic substrate of the return path section 6. 7 is deposited and patterned by a sputtering method, vapor deposition method, plating method, etc.

【0010】図3のAに示す如く、 <7>その後、前記厚膜主磁極膜7上に主磁極膜8をス
パッタリング法、蒸着法、めっき法等にて被着形成し、
パターン化する。
As shown in FIG. 3A, <7> Then, a main pole film 8 is deposited on the thick main pole film 7 by sputtering, vapor deposition, plating, etc.
Make a pattern.

【0011】<8>ヘッド保護膜9を積層被着する(図
3のB参照)。ヘッド保護膜はスパッタ条件として、純
度99.9%のAl2O3ターゲットを使用し、Ar流
量100SCCM、RF入力3kW、Ar圧20mTo
rr、基板側負バイアス電圧0の条件で、主磁極膜上に
積層成膜する。得られるAl2O3保護膜はAl/Ar
原子量比が1.5〜2.5である。
<8> A head protective film 9 is laminated and deposited (see B in FIG. 3). The head protective film was sputtered using an Al2O3 target with a purity of 99.9%, an Ar flow rate of 100SCCM, an RF input of 3kW, and an Ar pressure of 20mTo.
A laminated film is formed on the main pole film under the conditions of rr and substrate side negative bias voltage of 0. The resulting Al2O3 protective film is Al/Ar
The atomic weight ratio is 1.5 to 2.5.

【0012】図3のCに示す如く、 <9>その後、所要寸法、形状に切断加工する際に、酸
化物からなる保護膜9が剥離するのを防止のため、保護
膜9部分にのみ、例えば#2000のダイヤモンドブレ
ードにて予備溝部10を形成する。
As shown in FIG. 3C, <9> Thereafter, in order to prevent the protective film 9 made of oxide from peeling off when cutting into the required size and shape, only the protective film 9 portion is coated. For example, the preliminary groove portion 10 is formed using a #2000 diamond blade.

【0013】図4のAに示す如く、 <10>前記予備溝部10幅より小さい、例えば#20
0の粒径のダイヤモンドブレードにて、成膜積層した磁
性基板1を切断する。
As shown in FIG. 4A, <10> A groove smaller than the width of the preliminary groove 10, for example #20.
The magnetic substrate 1 on which the films are laminated is cut with a diamond blade having a grain size of 0.

【0014】<11>磁性基板1上に成膜積層した主磁
極膜8を厚膜主磁極膜7先端部より、摺動面側に10μ
mの位置までダイヤモンド研摩を施す(図4のB参照)
<11> The main magnetic pole film 8 formed and laminated on the magnetic substrate 1 is separated by 10 μm from the tip of the thick main magnetic pole film 7 toward the sliding surface.
Perform diamond polishing to position m (see B in Figure 4)
.

【0015】図4のCに示す如く、 <12>前記磁性基板1を成膜積層したパターン部より
800μm厚み位置まで切断除去する。
As shown in FIG. 4C, <12> The magnetic substrate 1 is cut and removed to a thickness of 800 μm from the pattern portion where the films are laminated.

【0016】図5のAに示す如く、 <13>前記磁性基板1の磁気記録媒体に対向する摺動
面側を、300μm×300μm寸法に加工する。
As shown in FIG. 5A, <13> The sliding surface side of the magnetic substrate 1 facing the magnetic recording medium is processed to have dimensions of 300 μm×300 μm.

【0017】図5のBに示す如く、 <14>さらに摺動ノイズを小さくするため、角度付き
ダイヤモンドブレードにて、摺動面側を100μm×5
0μm寸法に形状加工する。
As shown in FIG. 5B, <14> In order to further reduce the sliding noise, an angled diamond blade is used to cut the sliding surface side by 100 μm×5.
Shape processed to 0 μm size.

【0018】図5のCに示す如く、 <15>次いで所要寸法、形状のヘッドチップ片に切断
加工する。
As shown in FIG. 5C, <15> Next, the head chip is cut into pieces having the required size and shape.

【0019】[0019]

【発明が解決しようとする課題】前記工程中の工程<8
>において、従来のスパッタ条件で得られたAl2O3
酸化物からなる保護膜9の硬度がHv800であり、C
o−Zr系からなる主磁極膜8の硬度がHv450、N
i−Zn系フェライトからなる磁性基板1の硬度がHv
750と異なり、かかる硬度差並びにAl2O3保護膜
の性状、すなわちAl/Ar原子量比によって、硬度の
低い主磁極膜8は記録媒体の対向摺動面より200Å〜
300Åの凹部(ポールリセッション)が形成されてし
まうことを知見した。
[Problem to be solved by the invention] Step <8 in the above steps
>, Al2O3 obtained under conventional sputtering conditions
The hardness of the protective film 9 made of oxide is Hv800, and C
The hardness of the main pole film 8 made of o-Zr system is Hv450, N
The hardness of the magnetic substrate 1 made of i-Zn ferrite is Hv.
750, the lower hardness of the main pole film 8 is 200 Å to 200 Å lower than the opposing sliding surface of the recording medium, depending on the hardness difference and the properties of the Al2O3 protective film, that is, the Al/Ar atomic weight ratio.
It was found that a recess (pole recession) of 300 Å was formed.

【0020】一般に、薄膜磁気ヘッドの出力記録密度は
磁気ヘッドと記録媒体間のスページングに大きく影響さ
れる。そのため最近では、磁気ヘッドと記録媒体間のス
ページング量は0.1μm以下になりつつあるが、かか
る薄膜磁気ヘッドにおいて、主磁極膜が摺動面より20
0Å〜300Åの凹みとなっていると、その凹み量だけ
スページングロスは大きくなり、出力、記録再生などヘ
ッド特性が低下する等の問題があった。
Generally, the output recording density of a thin film magnetic head is greatly influenced by the spacing between the magnetic head and the recording medium. Therefore, recently, the amount of spacing between the magnetic head and the recording medium is becoming less than 0.1 μm.
If the recess is between 0 Å and 300 Å, the spacing loss increases by the amount of the recess, causing problems such as deterioration of head characteristics such as output and recording/reproduction.

【0021】そこで発明者は先に、薄膜導体コイル、層
間絶縁膜、主磁極膜、ヘッド保護膜が成膜積層し、かつ
リターンパス部にて磁性基板と主磁極膜と接続したリタ
ーンパス用磁性基板を所要寸法に切断、研摩加工後、記
録媒体に対向する摺動面の前記積層端面にAl2O3被
膜を成膜して、切断、研摩加工に伴う主磁極部の凹部に
前記酸化物を充填後、積層端面上のAl2O3被膜及び
主磁極部の凹部に充填のAl2O3を精密加工あるいは
ドライエッチング法にて除去して、前記積層端面より1
00Å以下の位置に主磁極を露出させる方法を提案(特
願平2−185891号、特願平2−220578号)
したが、多大の工程、工数を要して製品コストの上昇を
招来する問題がある。
[0021] Therefore, the inventor first developed a return path magnetic material in which a thin film conductor coil, an interlayer insulating film, a main pole film, and a head protection film were formed and laminated, and the magnetic substrate and the main pole film were connected at the return path part. After cutting the substrate to the required dimensions and polishing, an Al2O3 film is formed on the laminated end face of the sliding surface facing the recording medium, and the oxide is filled into the recessed part of the main pole part due to cutting and polishing. , the Al2O3 coating on the laminated end face and the Al2O3 filled in the recess of the main pole part are removed by precision machining or dry etching, and one layer is removed from the laminated end face.
Proposed a method of exposing the main magnetic pole at a position of 00 Å or less (Japanese Patent Application No. 2-185891, Patent Application No. 2-220578)
However, there is a problem in that it requires a large number of steps and man-hours, leading to an increase in product cost.

【0022】この発明は、上述した垂直磁気記録再生薄
膜ヘッドの製造工程中で、磁性基板を分割形成して個々
のヘッドチップに加工する際に、硬度の低い主磁極膜に
発生する凹部(ポールリセッション)を低減でき、出力
、記録再生などヘッド特性の改善向上を図ることができ
る薄膜ヘッドの製造方法の提供を目的としている。
[0022] In the manufacturing process of the above-mentioned perpendicular magnetic recording/reproducing thin film head, the present invention eliminates concave portions (poles) that occur in the main pole film having low hardness when the magnetic substrate is divided and processed into individual head chips. The purpose of the present invention is to provide a method for manufacturing a thin film head that can reduce recession (recession) and improve head characteristics such as output and recording/reproduction.

【0023】[0023]

【課題を解決するための手段】この発明は、リターンパ
ス用磁性部材の一主面に、磁気記録媒体に対向する摺動
面に平行な主溝部を有し、該溝に非磁性材を充填し、前
記非磁性材主面に少なくとも薄膜導体コイル、層間絶縁
膜、主磁極膜を成膜積層した後、基板側に負のバイアス
電圧80〜160Vを印加したスパッタ条件で、Al/
Ar原子量比=2.8〜9.2を有するAl2O3保護
膜を成膜し、リターンパス部にて磁性基板と主磁極膜と
接続したリターンパス用磁性基板を所要寸法に切断加工
後、記録媒体に対向する摺動面の前記積層端面をメカノ
ケミカル研摩して、前記積層端面より100Å以下の位
置に主磁極を露出させることを特徴とする垂直磁気記録
再生薄膜ヘッドの製造方法である。
[Means for Solving the Problems] The present invention has a main groove on one main surface of a return path magnetic member parallel to a sliding surface facing a magnetic recording medium, and fills the groove with a nonmagnetic material. After forming and laminating at least a thin film conductor coil, an interlayer insulating film, and a main pole film on the main surface of the nonmagnetic material, Al/
After forming an Al2O3 protective film having an Ar atomic weight ratio of 2.8 to 9.2 and cutting the return path magnetic substrate, which is connected to the magnetic substrate and the main magnetic pole film at the return path portion, into required dimensions, the recording medium is processed. This method of manufacturing a perpendicular magnetic recording/reproducing thin film head is characterized in that the end face of the laminated layer facing the sliding surface is mechanochemically polished to expose the main pole at a position of 100 Å or less from the end face of the laminated layer.

【0024】[0024]

【作用】この発明は、薄膜磁気ヘッドの出力、記録再生
などヘッド特性の改善向上を計り、成膜積層した磁性基
板より磁気ヘッドチップを製造する際に、記録媒体の対
向摺動面に露出する主磁極部に形成される凹部を極力減
少するため、種々検討した結果、主磁極膜上に成膜する
ヘッド保護膜のAl2O3膜は、スパッタ条件により、
該Al2O3膜の性状及び硬度が変化することを知見し
た。 さらに検討した結果、基板側に印加する負のバイアス電
圧を特定範囲とするスパッタ条件により、Al2O3膜
中に含まれるAr原子量をAl原子量との特定の構成比
率範囲に制御することにより、Al2O3膜がメカノケ
ミカル研摩にて研摩し易い性状となりかつ硬度が低下し
、前記積層端面をメカノケミカル研摩する際に、主磁極
膜とAl2O3膜の研摩速度がほぼ同等となるため、記
録媒体に対向する摺動面の前記主磁極部の凹部が著しく
低減され、記録再生特性は大きく改善向上することを知
見した。
[Operation] This invention aims to improve head characteristics such as output and recording/reproduction of a thin film magnetic head, and when manufacturing a magnetic head chip from a magnetic substrate laminated with films, the thin film magnetic head is exposed to the opposing sliding surface of the recording medium. In order to reduce the number of recesses formed in the main pole part as much as possible, we have conducted various studies and found that depending on the sputtering conditions, the Al2O3 film of the head protection film formed on the main pole film is
It has been found that the properties and hardness of the Al2O3 film change. As a result of further investigation, we found that by controlling the Ar atomic weight contained in the Al2O3 film to a specific composition ratio range with respect to the Al atomic weight using sputtering conditions in which the negative bias voltage applied to the substrate side is within a specific range, the Al2O3 film can be formed. The property becomes easy to polish by mechanochemical polishing and the hardness decreases, and when the end face of the stack is mechanochemically polished, the polishing speed of the main pole film and the Al2O3 film is almost the same, so that the sliding surface facing the recording medium It has been found that the concave portion of the main magnetic pole portion on the surface is significantly reduced, and the recording and reproducing characteristics are greatly improved.

【0025】図面に基づく開示 図1から図5はこの発明による垂直磁気記録再生薄膜ヘ
ッドの製造工程を示す説明図である。図1のAから図3
のAに示す工程は、前述した従来の工程<1>〜<7>
と同様であり、また図3のC、図4のAに示す工程<9
><10>、さらに図4のCから図5のCに示す工程<
12>〜<15>も同様であり、この発明の特徴である
図3のBに示す工程<8>及び図4のBに示す工程<1
1>について説明する。
Disclosure Based on the Drawings FIGS. 1 to 5 are explanatory diagrams showing the manufacturing process of a perpendicular magnetic recording/reproducing thin film head according to the present invention. Figure 1 A to Figure 3
The process shown in A is the conventional process <1> to <7> described above.
, and the steps shown in C in FIG. 3 and A in FIG. 4<9
><10>, and further steps shown from C in FIG. 4 to C in FIG. 5<
12> to <15> are the same, and the process <8> shown in B of FIG. 3 and the step <1 shown in B of FIG. 4, which are the characteristics of this invention.
1> will be explained.

【0026】図3のBに示す如く、<8>工程<7>で
得られた主磁極膜8上にヘッド保護膜としてAl2O3
を成膜するスパッタ条件として、純度99.9%のAl
2O3ターゲットを使用し、Ar流量200SCCM、
RF入力3kW、Ar圧20mTorr、基板側負バイ
アス電圧を80〜160Vにして印加し、Al/Ar原
子量比=2.8〜9.2を有するAl2O3保護膜を主
磁極膜上に積層成膜する。
As shown in FIG. 3B, Al2O3 is applied as a head protective film on the main pole film 8 obtained in step <8><7>.
The sputtering conditions for forming the film were Al with a purity of 99.9%.
Using 2O3 target, Ar flow rate 200SCCM,
Apply RF input of 3 kW, Ar pressure of 20 mTorr, and substrate side negative bias voltage of 80 to 160 V, and deposit an Al2O3 protective film having an Al/Ar atomic weight ratio of 2.8 to 9.2 on the main pole film. .

【0027】この発明において、スパッタ条件の基板側
負バイアス電圧が80V未満では、得られるAl2O3
保護膜の内部応力が大きく、また硬度が高くて好ましく
なく、また160Vを越えると硬度が低くなりすぎて保
護膜の機能を果たさなくなるため、基板側負バイアス電
圧を80〜160Vにする。
In this invention, if the negative bias voltage on the substrate side of the sputtering conditions is less than 80V, the resulting Al2O3
The negative bias voltage on the substrate side is set to 80 to 160 V because the internal stress of the protective film is large and the hardness is undesirable, and if it exceeds 160V, the hardness becomes too low and the protective film no longer functions.

【0028】この発明において、スパッタされたAl2
O3保護膜のAl/Ar原子量比が2.8未満では、主
磁極膜とAl2O3保護膜の硬度差が大きくなってポー
ルリセッションが大きくなり、また該比が9.2を越え
ると保護膜の硬度が低くなりすぎて好ましくないため、
Al/Ar原子量比は2.8〜9.2とする。
In this invention, sputtered Al2
If the Al/Ar atomic weight ratio of the O3 protective film is less than 2.8, the difference in hardness between the main pole film and the Al2O3 protective film becomes large, resulting in large pole recession, and if the ratio exceeds 9.2, the hardness of the protective film increases. is too low, which is undesirable,
The Al/Ar atomic weight ratio is set to 2.8 to 9.2.

【0029】図4のBに示す如く、<11>磁性基板1
上に成膜積層した主磁極膜8を厚膜主磁極膜7先端部よ
り、摺動面側に10μmの位置までダイヤモンド研摩を
施した後、メカノケミカル研摩を施す。
As shown in FIG. 4B, <11> Magnetic substrate 1
The main pole film 8 laminated thereon is subjected to diamond polishing from the tip of the thick main pole film 7 to a position of 10 μm on the sliding surface side, and then mechanochemical polishing is performed.

【0030】この発明において、メカノケミカル研摩法
(MCP研摩法)は、粒径0.1μm以下のMgO、S
iO2、Al2O3、ZrO2の単独または混合微粒粉
末を純水中に3〜10wt%でpH9〜12に懸濁させ
た液を貯めた容器内に例えば硬質クロス、Sn等からな
るポリッシャーを用いて加工材をポリッシャーより5μ
m以下の浮上または接触させ5〜60分間研摩加工する
方法が好ましい。
[0030] In this invention, the mechanochemical polishing method (MCP polishing method) uses MgO, S with a particle size of 0.1 μm or less
Processing materials are placed in a container containing a solution in which fine powders of iO2, Al2O3, and ZrO2, either alone or mixed, are suspended in pure water at a concentration of 3 to 10 wt% at a pH of 9 to 12 using a polisher made of hard cloth, Sn, etc. 5μ than the polisher
It is preferable to use a method in which the surface is floated to a height of 5 m or less or brought into contact with the surface and polished for 5 to 60 minutes.

【0031】MCP研摩時の砥粒のMgO、SiO2、
Al2O3、ZrO2微粉末の粒径が0.1μmを越え
ると、また懸濁液中の前記微粉末濃度が3wt%未満で
は研摩速度が遅くて、研摩能率が悪く、また10wt%
を超えると被加工面にスクラッチ、キズ等が形成され、
面状態が悪いので好ましくない。懸濁液のpHが9未満
ではエッチング作用が低下して、被加工材にスクラッチ
、キズが増加し、また12を超えると腐食速度が速くな
り、被加工材のフェライト材の面が劣化するので好まし
くない。
[0031] MgO, SiO2, and abrasive grains during MCP polishing
If the particle size of the Al2O3, ZrO2 fine powder exceeds 0.1 μm, or if the concentration of the fine powder in the suspension is less than 3 wt%, the polishing speed is slow and the polishing efficiency is poor;
If it exceeds this, scratches, scratches, etc. will be formed on the processed surface.
Unfavorable because the surface condition is poor. If the pH of the suspension is less than 9, the etching effect will decrease and scratches and scratches will increase on the workpiece, and if it exceeds 12, the corrosion rate will increase and the ferrite surface of the workpiece will deteriorate. Undesirable.

【0032】研磨時間が60分を超えるとフェライトか
らなる補助磁極とAl2O3膜との段差が大きくなり磁
気回路を構成しなくなり、また5分未満では主磁極部の
凹部が減少せず好ましくない。
If the polishing time exceeds 60 minutes, the difference in level between the auxiliary magnetic pole made of ferrite and the Al2O3 film becomes so large that a magnetic circuit cannot be formed, and if the polishing time exceeds 5 minutes, the concave portion of the main magnetic pole does not decrease, which is not preferable.

【0033】またポリッシャーとしては、加工面のうね
り発生の少ない点よりSnが好ましい。さらにMCP研
摩時の被加工材のポリッシャーよりの浮上量が5μmを
超えると研摩速度が低下し、面にうねりを生ずるので好
ましくない。
As the polisher, Sn is preferable because it causes less waviness on the processed surface. Furthermore, if the flying height of the workpiece from the polisher during MCP polishing exceeds 5 μm, the polishing speed will decrease and the surface will be undulated, which is not preferable.

【0034】[0034]

【実施例】表面を精密仕上げしたNi−Znフェライト
基板上に、幅0.15mm×深さ0.025mm×長さ
50mmの溝を複数本、機械加工で形成する。得られた
溝部に、5μm以上の気泡が1ケ/mm3以下の状態で
Al2O3を充填した後、前記主面にメカノケミカル研
摩を施し、前記研摩面上に、薄膜導体コイル用Cu膜を
スパッタリングにて形成し、所定形状のパターン化する
EXAMPLE A plurality of grooves each having a width of 0.15 mm x a depth of 0.025 mm x a length of 50 mm are formed by machining on a Ni--Zn ferrite substrate whose surface has been precisely finished. After filling the obtained groove with Al2O3 in a state where the number of bubbles of 5 μm or more is 1 bubble/mm3 or less, the main surface is subjected to mechanochemical polishing, and a Cu film for a thin film conductor coil is sputtered on the polished surface. and pattern it into a predetermined shape.

【0035】電気的絶縁のための層間絶縁被膜として、
ポリイミド系樹脂を用いて被膜した後、エッチバック法
を用いて、表面を平坦化した。その後、Co系アモルフ
ァスからなる厚膜主磁極膜をスパッタリング法にて被着
形成パターン化し、さらに、Co系アモルファスからな
る薄膜主磁極膜をスパッタリング法にて被着形成パター
ン化した。
As an interlayer insulation coating for electrical insulation,
After coating with polyimide resin, the surface was flattened using an etch-back method. Thereafter, a thick main magnetic pole film made of Co-based amorphous was formed into an adhesion pattern by sputtering, and a thin main magnetic pole film made of Co-based amorphous was formed into an adhesion pattern by sputtering.

【0036】さらに、純度99.9%のAl2O3ター
ゲットを使用し、Ar流量200SCCM、RF入力3
kW、Ar圧20mTorr、基板側負バイアス電圧を
120Vにして印加してAl2O3保護膜を主磁極膜上
に積層成膜した。得られたAl2O3保護膜は、硬度H
v=700、Al/Ar原子量比=4.9であった。
Furthermore, using an Al2O3 target with a purity of 99.9%, an Ar flow rate of 200SCCM, and an RF input of 3
kW, an Ar pressure of 20 mTorr, and a negative bias voltage on the substrate side of 120 V were applied to form an Al2O3 protective film on the main pole film. The obtained Al2O3 protective film has a hardness of H
v=700, and Al/Ar atomic weight ratio=4.9.

【0037】その後、Al2O3保護膜に、#2000
のダイヤモンドブレードにより深さ20μm×幅300
μmの予備溝部を形成後、前記予備溝部幅より小さい#
200の粒径のダイヤモンドブレードにて成膜積層した
磁性基板を切断後、主磁極部を厚膜部先端部より、摺動
面側に10μmの位置までダイヤモンド研摩を施し、さ
らにMCP研摩した。MCP研摩は、粒径0.1μm以
下のMgO粉末を超純水中に4wt%で懸濁させ、Sn
からなる円盤型のポリッシャーを用いpH10.5にし
、被加工材をこの懸濁液中でポリッシャー面より2μm
浮上させ15分間研摩した。
[0037] After that, #2000 was applied to the Al2O3 protective film.
Depth 20μm x width 300mm with diamond blade
After forming a preliminary groove of μm, # is smaller than the preliminary groove width.
After cutting the magnetic substrate on which the films were laminated using a diamond blade having a grain size of 200, diamond polishing was applied to the main pole part from the tip of the thick film part to a position of 10 μm on the sliding surface side, and further MCP polishing was performed. In MCP polishing, MgO powder with a particle size of 0.1 μm or less is suspended at 4 wt% in ultrapure water, and Sn
The pH was adjusted to 10.5 using a disc-shaped polisher made of
It was floated and polished for 15 minutes.

【0038】MCP研摩を完了した記録媒体の対向摺動
面の主磁極膜のポールリセッションををWYKO社製の
非接触表面形状測定機を用いて測定した結果、この発明
による薄膜磁気ヘッドのポールリセッションは100Å
以下であった。ちなみに、従来の製造方法により得られ
た薄膜磁気ヘッドのポールリセッションは200Å〜3
00Åであった。
As a result of measuring the pole recession of the main pole film on the opposing sliding surface of the recording medium that has undergone MCP polishing using a non-contact surface profile measuring machine manufactured by WYKO, the pole recession of the thin film magnetic head according to the present invention was found. is 100Å
It was below. By the way, the pole recession of thin film magnetic heads obtained by conventional manufacturing methods is 200 Å to 3
It was 00 Å.

【0039】また、この発明法及び従来法により得られ
た薄膜ヘッドの磁気記録特性を測定した結果を図6に表
す。図6における記録特性を測定した試験条件は下記の
通りである。 記録特性測定の試験条件 相対速度  7.5m/sec 記録電流  20mAp−p 媒体  Co−Cr/Ni−Feの二層媒体記録周波数
  0.5〜20MHz、 回転数  1800rpm
FIG. 6 shows the results of measuring the magnetic recording characteristics of the thin film heads obtained by the method of this invention and the conventional method. The test conditions under which the recording characteristics in FIG. 6 were measured are as follows. Test conditions for measuring recording characteristics Relative speed: 7.5 m/sec Recording current: 20 mAp-p Medium: Co-Cr/Ni-Fe dual layer medium Recording frequency: 0.5 to 20 MHz, rotation speed: 1800 rpm

【0040】[0040]

【発明の効果】この発明は、垂直磁気記録再生薄膜ヘッ
ドの製造に際し、主磁極膜上に成膜するヘッド保護膜の
Al2O3膜の性状、硬度を、スパッタ基板側に印加す
る負のバイアス電圧を特定範囲とするスパッタ条件によ
ってAl2O3膜中のAl/Ar原子量比を特定範囲に
制御し、Al2O3膜がメカノケミカル研摩にて研摩し
易い性状並びに硬度とし、記録媒体に対向する摺動面の
前記主磁極部の凹部(ポールリセッション)を著しく低
減でき、実施例、特に図2に示す如く、記録再生特性は
大きく改善向上する。
[Effects of the Invention] When manufacturing a perpendicular magnetic recording/reproducing thin film head, the properties and hardness of the Al2O3 film, which is the head protective film formed on the main pole film, can be controlled by applying a negative bias voltage to the sputter substrate side. The Al/Ar atomic weight ratio in the Al2O3 film is controlled within a specific range by sputtering conditions set in a specific range, so that the Al2O3 film has properties and hardness that are easy to polish by mechanochemical polishing, and the main surface of the sliding surface facing the recording medium is The concave portion (pole recession) in the magnetic pole portion can be significantly reduced, and as shown in the embodiments, particularly in FIG. 2, the recording and reproducing characteristics are greatly improved.

【図面の簡単な説明】[Brief explanation of drawings]

【図1】A,B,Cはこの発明による垂直磁気記録再生
薄膜ヘッドの製造工程を示す説明図である。
FIGS. 1A, 1B, and 1C are explanatory diagrams showing the manufacturing process of a perpendicular magnetic recording/reproducing thin film head according to the present invention.

【図2】A,B,Cはこの発明による垂直磁気記録再生
薄膜ヘッドの製造工程を示す説明図である。
FIGS. 2A, 2B, and 2C are explanatory diagrams showing the manufacturing process of the perpendicular magnetic recording/reproducing thin film head according to the present invention.

【図3】A,B,Cはこの発明による垂直磁気記録再生
薄膜ヘッドの製造工程を示す説明図である。
FIGS. 3A, 3B, and 3C are explanatory diagrams showing the manufacturing process of the perpendicular magnetic recording/reproducing thin film head according to the present invention.

【図4】A,B,Cはこの発明による垂直磁気記録再生
薄膜ヘッドの製造工程を示す説明図である。
FIGS. 4A, 4B, and 4C are explanatory diagrams showing the manufacturing process of the perpendicular magnetic recording/reproducing thin film head according to the present invention.

【図5】A,B,Cはこの発明による垂直磁気記録再生
薄膜ヘッドの製造工程を示す説明図である。
FIGS. 5A, 5B, and 5C are explanatory diagrams showing the manufacturing process of the perpendicular magnetic recording/reproducing thin film head according to the present invention.

【図6】薄膜磁気ヘッドの記録周波数と再生出力の関係
を示すグラフである。
FIG. 6 is a graph showing the relationship between recording frequency and reproduction output of a thin film magnetic head.

【符号の説明】[Explanation of symbols]

1  磁性基板 2  溝部 3  非磁性材 4  薄膜導体コイル 5  層間絶縁被膜 6  リターンパス部 7  厚膜主磁極膜 8  主磁極膜 9  ヘッド保護膜 10  予備溝部 1 Magnetic substrate 2 Groove 3 Non-magnetic material 4 Thin film conductor coil 5 Interlayer insulation coating 6 Return path section 7 Thick film main pole film 8 Main pole film 9 Head protective film 10 Preliminary groove part

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】  リターンパス用磁性部材の一主面に、
磁気記録媒体に対向する摺動面に平行な主溝部を有し、
該溝に非磁性材を充填し、前記非磁性材主面に少なくと
も薄膜導体コイル、層間絶縁膜、主磁極膜を成膜積層し
た後、基板側に負のバイアス電圧80〜160Vを印加
したスパッタ条件で、Al/Ar原子量比=2.8〜9
.2を有するAl2O3保護膜を成膜し、リターンパス
部にて磁性基板と主磁極膜と接続したリターンパス用磁
性基板を所要寸法に切断加工後、記録媒体に対向する摺
動面の前記積層端面をメカノケミカル研摩して、前記積
層端面より100Å以下の位置に主磁極を露出させるこ
とを特徴とする垂直磁気記録再生薄膜ヘッドの製造方法
[Claim 1] On one main surface of the return path magnetic member,
It has a main groove section parallel to the sliding surface facing the magnetic recording medium,
After filling the groove with a nonmagnetic material and depositing at least a thin film conductor coil, an interlayer insulating film, and a main pole film on the main surface of the nonmagnetic material, sputtering is performed by applying a negative bias voltage of 80 to 160 V to the substrate side. Under the conditions, Al/Ar atomic weight ratio = 2.8 ~ 9
.. After forming an Al2O3 protective film having 2 and cutting the return path magnetic substrate connected to the magnetic substrate and the main pole film at the return path portion into required dimensions, the laminated end surface of the sliding surface facing the recording medium is A method for manufacturing a perpendicular magnetic recording/reproducing thin film head, characterized in that the main magnetic pole is exposed at a position of 100 Å or less from the end face of the laminated layer by mechanochemical polishing.
JP13545791A 1991-05-11 1991-05-11 Production of vertical magnetic recording and reproducing thin-film head Pending JPH04335202A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13545791A JPH04335202A (en) 1991-05-11 1991-05-11 Production of vertical magnetic recording and reproducing thin-film head

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13545791A JPH04335202A (en) 1991-05-11 1991-05-11 Production of vertical magnetic recording and reproducing thin-film head

Publications (1)

Publication Number Publication Date
JPH04335202A true JPH04335202A (en) 1992-11-24

Family

ID=15152163

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13545791A Pending JPH04335202A (en) 1991-05-11 1991-05-11 Production of vertical magnetic recording and reproducing thin-film head

Country Status (1)

Country Link
JP (1) JPH04335202A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6712985B2 (en) 2001-07-03 2004-03-30 Hitachi Global Storage Technologies Method and apparatus for the manufacture of thin film magnetic transducers using a compliant, soft lapping process

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6712985B2 (en) 2001-07-03 2004-03-30 Hitachi Global Storage Technologies Method and apparatus for the manufacture of thin film magnetic transducers using a compliant, soft lapping process

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