JPH0433772B2 - - Google Patents
Info
- Publication number
- JPH0433772B2 JPH0433772B2 JP1134087A JP1134087A JPH0433772B2 JP H0433772 B2 JPH0433772 B2 JP H0433772B2 JP 1134087 A JP1134087 A JP 1134087A JP 1134087 A JP1134087 A JP 1134087A JP H0433772 B2 JPH0433772 B2 JP H0433772B2
- Authority
- JP
- Japan
- Prior art keywords
- group
- diethynylbenzene
- benzene
- ppm
- proton
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910052739 hydrogen Inorganic materials 0.000 claims description 12
- 239000001257 hydrogen Substances 0.000 claims description 12
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 10
- 125000000217 alkyl group Chemical group 0.000 claims description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 2
- 229910052799 carbon Inorganic materials 0.000 claims description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 33
- -1 resists Substances 0.000 description 32
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 30
- 125000001570 methylene group Chemical group [H]C([H])([*:1])[*:2] 0.000 description 27
- CBYDUPRWILCUIC-UHFFFAOYSA-N 1,2-diethynylbenzene Chemical class C#CC1=CC=CC=C1C#C CBYDUPRWILCUIC-UHFFFAOYSA-N 0.000 description 21
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 21
- 239000010408 film Substances 0.000 description 19
- UHOVQNZJYSORNB-UHFFFAOYSA-N monobenzene Natural products C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 19
- 150000001875 compounds Chemical class 0.000 description 18
- 238000000034 method Methods 0.000 description 14
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 12
- 238000006243 chemical reaction Methods 0.000 description 12
- 239000000463 material Substances 0.000 description 11
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 9
- 239000000243 solution Substances 0.000 description 9
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 7
- 230000001186 cumulative effect Effects 0.000 description 7
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 7
- 238000007254 oxidation reaction Methods 0.000 description 7
- 229920002120 photoresistant polymer Polymers 0.000 description 7
- 238000000425 proton nuclear magnetic resonance spectrum Methods 0.000 description 7
- 229910004298 SiO 2 Inorganic materials 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical class C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 6
- 239000013078 crystal Substances 0.000 description 6
- 238000002329 infrared spectrum Methods 0.000 description 6
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 6
- 229910052753 mercury Inorganic materials 0.000 description 6
- 230000003647 oxidation Effects 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 238000005452 bending Methods 0.000 description 5
- 239000012776 electronic material Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- YYROPELSRYBVMQ-UHFFFAOYSA-N 4-toluenesulfonyl chloride Chemical compound CC1=CC=C(S(Cl)(=O)=O)C=C1 YYROPELSRYBVMQ-UHFFFAOYSA-N 0.000 description 4
- UEXCJVNBTNXOEH-UHFFFAOYSA-N Ethynylbenzene Chemical compound C#CC1=CC=CC=C1 UEXCJVNBTNXOEH-UHFFFAOYSA-N 0.000 description 4
- HEDRZPFGACZZDS-MICDWDOJSA-N Trichloro(2H)methane Chemical compound [2H]C(Cl)(Cl)Cl HEDRZPFGACZZDS-MICDWDOJSA-N 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000001228 spectrum Methods 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- 125000005103 alkyl silyl group Chemical group 0.000 description 3
- IJOOHPMOJXWVHK-UHFFFAOYSA-N chlorotrimethylsilane Chemical compound C[Si](C)(C)Cl IJOOHPMOJXWVHK-UHFFFAOYSA-N 0.000 description 3
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 2
- CSNNHWWHGAXBCP-UHFFFAOYSA-L Magnesium sulfate Chemical compound [Mg+2].[O-][S+2]([O-])([O-])[O-] CSNNHWWHGAXBCP-UHFFFAOYSA-L 0.000 description 2
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 2
- 229910018540 Si C Inorganic materials 0.000 description 2
- UIIMBOGNXHQVGW-UHFFFAOYSA-M Sodium bicarbonate Chemical compound [Na+].OC([O-])=O UIIMBOGNXHQVGW-UHFFFAOYSA-M 0.000 description 2
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 2
- DCFKHNIGBAHNSS-UHFFFAOYSA-N chloro(triethyl)silane Chemical compound CC[Si](Cl)(CC)CC DCFKHNIGBAHNSS-UHFFFAOYSA-N 0.000 description 2
- 229940125782 compound 2 Drugs 0.000 description 2
- 238000005828 desilylation reaction Methods 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- DVSDBMFJEQPWNO-UHFFFAOYSA-N methyllithium Chemical compound C[Li] DVSDBMFJEQPWNO-UHFFFAOYSA-N 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- 125000001424 substituent group Chemical group 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 2
- AOXOMZYRICNLQZ-UHFFFAOYSA-N trimethyl-[2-[2-(2-trimethylsilylethynyl)phenyl]ethynyl]silane Chemical compound C[Si](C)(C)C#CC1=CC=CC=C1C#C[Si](C)(C)C AOXOMZYRICNLQZ-UHFFFAOYSA-N 0.000 description 2
- 125000000026 trimethylsilyl group Chemical group [H]C([H])([H])[Si]([*])(C([H])([H])[H])C([H])([H])[H] 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- MVLGANVFCMOJHR-UHFFFAOYSA-N 1,4-diethynylbenzene Chemical compound C#CC1=CC=C(C#C)C=C1 MVLGANVFCMOJHR-UHFFFAOYSA-N 0.000 description 1
- GIEMHYCMBGELGY-UHFFFAOYSA-N 10-undecen-1-ol Chemical compound OCCCCCCCCCC=C GIEMHYCMBGELGY-UHFFFAOYSA-N 0.000 description 1
- 238000005160 1H NMR spectroscopy Methods 0.000 description 1
- 125000006417 CH Chemical group [H]C* 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 150000001555 benzenes Chemical class 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- HIFGEPYDMHCIMG-UHFFFAOYSA-N chloro(triheptyl)silane Chemical compound CCCCCCC[Si](Cl)(CCCCCCC)CCCCCCC HIFGEPYDMHCIMG-UHFFFAOYSA-N 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 229920000547 conjugated polymer Polymers 0.000 description 1
- 239000002633 crown compound Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- GNOIPBMMFNIUFM-UHFFFAOYSA-N hexamethylphosphoric triamide Chemical compound CN(C)P(=O)(N(C)C)N(C)C GNOIPBMMFNIUFM-UHFFFAOYSA-N 0.000 description 1
- 150000002431 hydrogen Chemical group 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000012280 lithium aluminium hydride Substances 0.000 description 1
- 229910052943 magnesium sulfate Inorganic materials 0.000 description 1
- 235000019341 magnesium sulphate Nutrition 0.000 description 1
- FRIJBUGBVQZNTB-UHFFFAOYSA-M magnesium;ethane;bromide Chemical compound [Mg+2].[Br-].[CH2-]C FRIJBUGBVQZNTB-UHFFFAOYSA-M 0.000 description 1
- 238000000655 nuclear magnetic resonance spectrum Methods 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- 235000017557 sodium bicarbonate Nutrition 0.000 description 1
- 229910000030 sodium bicarbonate Inorganic materials 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 125000002088 tosyl group Chemical group [H]C1=C([H])C(=C([H])C([H])=C1C([H])([H])[H])S(*)(=O)=O 0.000 description 1
- 125000002306 tributylsilyl group Chemical group C(CCC)[Si](CCCC)(CCCC)* 0.000 description 1
- UZIXCCMXZQWTPB-UHFFFAOYSA-N trimethyl(2-phenylethynyl)silane Chemical compound C[Si](C)(C)C#CC1=CC=CC=C1 UZIXCCMXZQWTPB-UHFFFAOYSA-N 0.000 description 1
- YHMJZIJXVNRXIN-UHFFFAOYSA-N trimethyl-(2-trimethylsilylphenyl)silane Chemical compound C[Si](C)(C)C1=CC=CC=C1[Si](C)(C)C YHMJZIJXVNRXIN-UHFFFAOYSA-N 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0755—Non-macromolecular compounds containing Si-O, Si-C or Si-N bonds
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
- Non-Silver Salt Photosensitive Materials And Non-Silver Salt Photography (AREA)
Description
(技術分野)
本発明はレジスト材料、有機半導体、導電材料
等の電子材料として有用な新規ジエチニルベンゼ
ン誘導体に関する。
(産業上の利用分野)
ベンゼン環に2個のエチニル基が直接結合して
いるジエチニルベンゼン化合物は、一般に、γ
線、電子線、X線、紫外線、可視光線、赤外線
(熱)等のエネルギー照射に対して極めて高感度
であり、かつエネルギー照射により得られる重合
体は、耐エツチング性に優れるため、電子線レジ
スト、X線レジスト、フオトレジストのようなパ
ターン形成材料、又は感熱材料として有用であ
る。また、前記のエネルギー照射により与えられ
る重合体は、C≡C三重結合が開いて共役二重結
合を形成した共役高分子となるため有機半導体、
導電性材料の電子材料として用いることもでき
る。
又、本発明のジエチニルベンゼン誘導体は、た
とえば分子末端のビニル基を酸化してカルボン酸
に変換することにより、両親媒性化合物を製造す
ることができる。分子内に適当な数のメチレン基
からなる長鎖状構造のような疎水性構造部分と、
アミノ基、水酸基、カルボキシル基のような親水
性構造部分の両方を兼ねそなえた両親媒性化合物
は、水面上に単分子膜を形成する。この単分子膜
は、ラングミユアーブロジエツト法(以下、“LB
法”という。また、この方法により製造した膜を
“LB膜”という。)により、適当な基板上に累積
し、高配向性の分子累積膜を形成することができ
る。特に分子内にジエチニルベンゼンのような構
造部分を有する両親媒性分子のLB膜は、レジス
トのようなパターン形成材料や有機半導体、導電
材料などの電子材料、非線形光学材料のようなオ
プトエレクトロニクス材料への応用が考えられ、
産業上非常に有用である。
(従来技術及び問題点)
これまで、ジエチニルベンゼン
(Technical Field) The present invention relates to a novel diethynylbenzene derivative useful as a resist material, an organic semiconductor, an electronic material such as a conductive material, and the like. (Industrial Application Field) Diethynylbenzene compounds, in which two ethynyl groups are directly bonded to the benzene ring, generally have γ
It is highly sensitive to energy irradiation such as beams, electron beams, , X-ray resists, patterning materials such as photoresists, or heat-sensitive materials. In addition, the polymer given by the energy irradiation becomes a conjugated polymer in which the C≡C triple bond opens to form a conjugated double bond, so it is an organic semiconductor,
It can also be used as a conductive electronic material. Further, the diethynylbenzene derivative of the present invention can be used to produce an amphipathic compound by, for example, oxidizing the vinyl group at the end of the molecule to convert it into a carboxylic acid. A hydrophobic structural part such as a long chain structure consisting of an appropriate number of methylene groups in the molecule,
Amphipathic compounds that have both hydrophilic structural moieties such as amino groups, hydroxyl groups, and carboxyl groups form a monomolecular film on the water surface. This monomolecular film was prepared using the Langmuir Blosget method (hereinafter referred to as “LB”).
(The film produced by this method is also called the "LB film.") It is possible to accumulate on a suitable substrate and form a highly oriented molecular cumulative film.In particular, diethinyl in the molecules can be accumulated on a suitable substrate. LB films made of amphiphilic molecules with structural moieties such as benzene can be applied to pattern-forming materials such as resists, electronic materials such as organic semiconductors and conductive materials, and optoelectronic materials such as nonlinear optical materials. ,
Very useful in industry. (Prior art and problems) Until now, diethynylbenzene
【式】又は一般式[Formula] or general formula
【式】(nは1 以上4以下の整数)で表される化合物、および[Formula] (n is 1 a compound represented by (an integer greater than or equal to 4), and
【式】のような化
合物はすでに知られている〔J.K.Crandallら、
Joural of American Chemical Society,97
(24),7171−2(1975);E.A.Runovaら、Vestn.
Mosk.Univ.,Ser.2:Khim.,24(3),299−300
(1983)等〕。
ジエチニルベンゼン化合物は、γ線、電子線、
紫外線、可視光線、赤外線(熱)等のエネルギー
照射に対して感受性を有しているが、分子量が小
さいため良質な薄膜の作製が困難であり、また昇
華性のため減圧下で取扱いが困難であつた。
ジエチニルベンゼン構造を有する化合物の薄膜
作製にLB法の適用が考えられるが、LB膜作製上
必要な両親媒性を有するジエチニルベンゼン化合
物は知られておらず、その製造原料も知られてい
ない。
(問題を解決するための手段)
このような問題点に鑑み、本発明者らは、薄膜
の作製が可能であり、非昇華性のジエチニルベン
ゼン化合物であり、またLB技術に適用可能な両
親媒性化合物の製造原料となるジエチニルベンゼ
ン化合物を得るべく鋭意検討を重ねた結果、本発
明のジエチニルベンゼン誘導体を得るに至つた。
すなわち、本発明は分子内にジエチニルベンゼ
ン構造、及びメチレン鎖、及び一方の分子末端に
ビニル基、他方の分子末端に水素又はアルキルシ
リル基を有する下記の一般式で表される新規なジ
エチニルベンゼン誘導体に関する。
〔式中のRは水素又は−SiX1X2X3で、X1,X2,
X3はそれぞれ独立に水素又は炭素数が1〜7の
アルキル基(ただし、X1,X2,X3がすべて水素
の場合は除く)で、かつnは9以上21以下の整数
である。〕
本発明のジエチニルベンゼン誘導体はその分子
構造特性から、IR吸収スペクトルにおいて、ベ
ンゼン環およびビニル基のC−H伸縮振動、メチ
レン基のC−H伸縮振動、C≡C伸縮振動がそれ
ぞれ3000〜3080cm-1,2850〜2960cm-1,2010〜
2260cm-1Iに観測される。また、ベンゼン環特有
の吸収が1600cm-1付近、1500cm-1付近に、ベンゼ
ン環のC−H面外変角振動が690〜860cm-1に観測
される。
また、1H−NMRスペクトルにおいては、ベン
ゼン環、ビニル基の=CH2及び−CH=Cのプロ
トンがそれぞれ、6.9〜7.8ppm、3.9〜6.4ppm,
5.3〜7.3ppmに、またC≡Cに隣接するメチレン
基、ビニル基に隣接するメチレン基、その他のメ
チレン基のプロトロンがそれぞれ、2.2〜
2.5ppm,1.8〜2.2ppm,0.6〜1.9ppmに観測され
る。また、置換基Rの構造に起因するIR吸収、1
H−NMRシグナルもそれぞれのスペクトルにお
いて認められる。
本発明のジエチニルベンゼン誘導体の一般式に
おいて、置換基Rは水素又は−SiX1X2X3である
が、−SiX1X2X3の例として、トリメチルシリル
基、トリエチルシリル基、メチルジエチルシリル
基、トリブチルシリル基、トリヘプチルシリル
基、ジエチルシリル基等を挙げることができる。
又、ベンゼン環への二つのエチニル基の置換様
式は、オルト、メタ、パラのいずれであつてもよ
い。
本発明のジエチニルベンゼン誘導体は、15℃で
固体であり、アセトン、メチルエチルケトン、エ
タノール、酢酸エチル、クロロホルム、ベンゼ
ン、ヘキサン等の溶媒に可溶である。
次に、本発明のジエチニルベンゼン誘導体の合
成法の一例を説明する。まず、合成反応のスキー
ムを以下に示す。
まず、ジエチニルベンゼン1を出発原料の一つ
として、グリニヤール法によりジエチニルベンゼ
ンの二つのエチニル基を金属ハロゲン化させ、化
合物2を得る。この化合物2をX1X2X3SiCl(X1,
X2,X3はそれぞれ独立に水素又は炭素数が1〜
7のアルキル基のいずれかであり、X1,X2,X3
は同時にすべては水素ではない)と反応させて、
ビスアルキルシリル化エチニルベンゼン3
を合成する。
一方、アルケニルアルコール4
CH2=CH−(CH2)o−OH (ただし、nは9
以上21以下の整数)をもう一つの出発原料とし
て、トシルクロリドと反応させて、アルケニルト
シレート5 CH2=CH−(CH2)o−OTs (ただ
し、nは9以上21以下の整数、Tsはトシル基)
を合成する。上記のビスアルキルシリル化エチニ
ルベンゼン3とアルケニルトシレート5を、メチ
ルリチウム等を用いて、一方のアルキルシリル基
を脱シリル化して有機金属化合物6とし、アルケ
ニルトシレート5と反応させることにより、本発
明のRが−SiX1X2X3(X1,X2,X3はそれぞれ独
立に水素又は炭素数1〜7のアルキル基で、X1,
X2,X3は同時にすべては水素ではない)の場合
のジエチニルベンゼン誘導体7を合成することが
できる。
また、Rが水素の場合の本発明のジエチニルベ
ンゼン誘導体は、Rがアルキルシリル基、−SiX1
X2X3の前記誘導体を、R′4NF,KF,R″Li等
(R′,R″は炭素数が1〜5個のアルキル基又はフ
エニル基)の脱シリル化剤の存在下で脱シリル化
させることにより得ることができる。ただし、脱
シリル化剤としてKFを用いる場合は、クラウン
化合物とともに使用することが好ましい。
以上、本発明のジエチニルベンゼン誘導体を与
える方法の一例を述べたが、これにより製造方法
を限定するものではない。
(発明の効果)
本発明のジエチニルベンゼン誘導体は、薄膜形
成が可能であり、又非昇華性である。従つて本発
明のジエチニルベンゼン誘導体は、薄膜にするこ
とにより、パターン形成材料、感熱材料として使
用することがてき、また重合体にすることによ
り、有機半導体、導電材料等の電子材料としての
応用に用いることができる。
また、本発明のジエチニルベンゼン誘導体は、
たとえばオゾン酸化等の酸化反応により、分子末
端のビニル基をカルボキシル基に変換して両親媒
性化合物を製造することができ、この両親媒性化
合物を用いて、LB膜を作製することにより、パ
ターン形成材料、導電材料のような電子材料、或
いは非線形光学材料のようなオプトエレクトロニ
クス材料へ応用することができる。
以下実施例により本発明をさらに詳細に説明す
る。
実施例 1
パラージエチニルベンゼン0.2モルを充分に脱
水したテトラヒドロフラン350mlに溶かし、−78℃
でエチルマグネシウムプロミド0.4モルを添加し
て25℃で1時間反応させた。次にこの反応液を再
び−78℃に冷却し、トリメチルシリルクロリド
0.4モルを添加して25℃で2時間反応させ、ビス
−(トリメチルシリルエチニル)−ベンゼンを得
た。
またω−ヘプタデセニルアルコール0.04モルを
ビリジン30mlに溶かし、反応容器を氷浴に浸しな
がら、トリエンスルホニルクロリド(トシルクロ
リド)0.045モルを加えて15℃で24時間反応させ
て、ヘプタデセニルトシレートを得た。
次にビス−(トリメチルシリル)−ベンゼン0.01
モルを十分に脱水したテトラヒドロフラン60mlに
溶かし、−78℃でメチルリチウム0.01モルを添加
して25℃で2時間反応させた。この反応液を再び
−78℃に冷却し、ヘキサメチルホスホルアミド35
mlとヘプタデセニルトシレート0.01モルを添加し
て25℃で1時間反応させた。この反応液に、炭酸
水素ナトリウム飽和水溶液250mlとジエチルエー
テル180mlを加えて充分に振とうしエーテル相に
生成物を抽出した。エーテル相を塩化ナトリウム
飽和水溶液で洗浄した後、硫酸マグネシウムで脱
水した。このエーテル溶液を濃縮して白黄色結晶
を得た。GPCによる精製により,1−(18−ノナ
デセン−1−イニル)−4−(トリメチルシリルエ
チニル)−ベンゼン
の白色結晶40m molを得た。
この結晶についてIRスペクトル、1H−NMRス
ペクトルを測定し、その構造について調べた。
KBr錠剤法によるIRスペクトル、を第1図に示
した。このスペクトルからわかるように、ベンゼ
ン環及び分子末端のビニル基、のC−H伸縮振動
が3020〜3080cm-1に、メチレル基のC−H伸縮振
動が28502920cm-1にメチル基のC−H伸縮振動が
2960cm-1に、−C≡C−のC≡C伸縮振動が2150
cm-1に、ビニル基、のC=Cの伸縮振動が1640cm
−1に、ベンゼン環の骨格振動が1490cm-1に、ベン
ゼン環のC−H面外変角振動が、840cm-1に観測
された。また、Si−CH3のメチル基由来の1400cm
−1,1240cm-1,Si−C伸縮振動由来の860cm-1K
吸収が観測された。
重クロロホルム溶液で測定した1H−NMRス
ペクトルを第2図に示した。このスペクトルから
わかるように、ベンゼン環のプロトンが7.44ppm
に、ビニル基の=CH−のプロトンが5.9ppmに、
ビニルの=CH2のプロトンが5.2ppmに、−C≡C
−基に隣接するメチレン基のプロトンが2.4ppm
に、ビニル基に隣接するメチレン基のプロトンが
2.0ppmに、その他のメチレン基のプロトンが0.8
〜1.8ppmに、トリメチルシリル基のプロトンが
0.04ppmにそれぞれ4:1:2:2:2:26:9
のシグナル積分度比で観測された。
当該化合物をオゾン酸化してビニル基をカルボ
キシル基に変換することにより、両親媒性のジエ
チニルベンゼン誘導体のカルボン酸を合成するこ
とができた。
こうして得られたジエチニルベンゼン誘導体の
カルボン酸を用いて、LB法によりSiO2被覆シリ
コンウエハ−上に59層の累積膜を作製した。この
LB膜をフオトレジスト用にマスクで覆い、100W
低圧水銀灯で1分間露光した後、エタノールで1
分間現像した結果、未露光部分のみエタノールに
溶解し、ネガ型パターンを形成することができ
た。
実施例 2
実施例1の方法で得た1−(18−ノナデセン−1
−イニル)−4−(トリメチルシリルエチニル)−
ベンゼン20m molのテトラヒドロフラン溶液に、
(C4H9)4NFのテトラヒドロフラン溶液を、(C4
H9)4NFがトリメチルシリル基の25当量となるよ
うに加えて、25℃で20時間攪拌して脱シリル化反
応を行つた。次に、この反応液中に少量の水を加
えて充分に振盪した後エーテル層を分離した。こ
の操作を繰り返してエーテル層を合わせ、濃縮し
て1−エチニル−4−(18ノナデセン−1−イニ
ル)−ベンゼン
の白色結晶30m molを得た。IRスペクトルから、
ベンゼン環及びビニル基のC−H伸縮振動が3020
〜3080cm-1に、メチレン基のC−H伸縮振動が
28502920cm-1に、エチニル基のC−H伸縮振動及
びC≡C伸縮振動がそれぞれ3300cm-1,2150cm-1
に、ビニル基のC=C伸縮振動が1640cm-1に、ベ
ンゼン環の骨格振動及びC−H面外変角振動がそ
れぞれ1490cm-1,840cm-1I観測された。
1H−NMRスペクトルを第3図に示した。こ
のスペクトルからわかるように、ベンゼン環のプ
ロトンが7.44ppmに、ビニル基の=CH−プロト
ン及び=CH2のプロトンがそれぞれ5.0ppm,
5.2ppmに、分子末端のエチニル基のプロトンが
3.1ppmに、−C≡C−に隣接するメチレン基のプ
ロトンが2.4ppmに、ビニル基に隣接するメチレ
ン基のプロトンが2.0ppmに、その他のメチレン
基のプロトンが0.8〜1.8ppmに、それぞれ4:
1:2:1:2:2:26のシグナル積分強度比で
観測された。当該化合物をオゾン酸化してビニル
基をカルボキシル基に変換することにより、両親
媒性のジエチニルベンゼン誘導体のカルボン酸を
合成することができた。
こうして得られたジエチニルベンゼン誘導体の
カルボン酸を用いて、LB法によりSiO2被覆シリ
コンウエハー上に59層の累積膜を作製した。この
LB膜をフオトレジスト用のマスクで覆い、100W
低圧水銀灯で1分間露光した後、エタノールで1
分間現像した結果、未露光部分のみエタノールに
溶解し、ネガ型のパターンを形成することができ
た。
実施例 3
実施例1において、ω−ヘプタデセニルアルコ
ールの代わりにω−ウンデシレニルアルコールを
用いて同様の反応を行い、まず1−(12−トリデ
セン−1−イニル)−4−トリメチルシリルエチ
ニル)−ベンゼン
46m molを得た。この化合物を実施例2におい
て1−(18−ノナデセン−1−イニル)−4−(ト
リメチルシリルエチニル)−ベンゼンの代わりに
用いて、1−エチニル−4−(12−トリデセン−
1−イニル)−ベンゼン
34m molを得た。IRスペクトルから、ベンゼン
環及びビニル基のC−H伸縮振動が3020〜3080cm
−1に、メチレン基のC−H伸縮振動が28502920cm
−1に、エチニル基のC−H伸縮振動及びC≡C伸
縮振動がそれぞれ3300cm-1,2150cm-1に、ビニル
基のC≡C伸縮振動が1640cm-1に、ベンゼン環の
骨格振動及びC−H面外変角振動がそれぞれ1490
cm-1,840cm-1に観測された。1H−NMRスペクト
ルから、ベンゼン環のプロトンが7.44ppmに、ビ
ニル基の=CH−のプロトン及び=CH2のプロト
ンがそれぞれ5.9ppm,5.2ppmに、分子末端のエ
チニル基のプロトンが3.1ppmに、−C≡C−に隣
接するメチレン基のプロトンが2.4ppmに、ビニ
ル基に隣接するメチレン基のプロトンが2.0ppm
に、その他のメチレン基のプロトンが0.8〜
1.8ppmに、それぞれ4:1:2:1:2:2:
14のシグナル積分強度比で観測された。当該化合
物をオゾン酸化してビニル基をカルボキシル基に
変換することにより、両親媒性のジエチニルベン
ゼン誘導体のカルボン酸を合成することができ
た。
こうして得られたジエチニルベンゼン誘導体の
カルボン酸を用いてLB法によりSiO2被覆シリコ
ンウエハ−上に59層の累積膜を作製した。この
LB膜をフオトレジスト用のマスクを覆い、100w
低圧水銀灯で1分間露光した後、エタノールで1
分間現像した結果、未露光部分のみエタノールに
溶解し、ネガ型のパターンを形成することができ
た。
実施例 4
実施例1において、トリメチルシリルクロリド
の代わりにクロロトリエチルシランを用いて同様
の反応を行い、ビス−(トリエチルシリルエチニ
ル)−ベンゼンを得た。この化合物を実施例1に
おいて、ビス−(トリメチルシリルエチニル)−ベ
ンゼンの代わりに用いて同様の反応を行い、1−
(18−シナデセン−1−イニル)−4−(トリエチ
ルシリルエチニル)−ベンゼンの白色結晶38m
molを得た。
KBr錠剤法によるIRスペクトルからベンゼン
環及び分子末端のビニル基のC−H伸縮振動が
3020〜3080cm-1に、メチレン基のcC−H伸縮振
動が28502920cm-1に、メチル基のC−H伸縮振動
が2960cm-1に、−C≡C−のC≡C伸縮振動が
1640cm-1に、ビニル基のC=C伸縮振動が1640cm
−1にベンゼン環の骨格振動が1490cm-1に、ベンゼ
ン環のC−H面外変角振動が840cm-1に観測され
た。また、Si−CH2CH3のメチレン基由来の1408
cm-1,1234cm-1,Si−C伸縮振動由来の860cm-1
の吸収が観測された。また1H−NMRスペクト
ルから、ベンゼン環のプロトンが7.44ppmに、ビ
ニル基の=CH−のプロトンが5.9ppmに、ビニル
基の=CH2のプロトンが5.2ppmに、−C≡C−基
に隣接するメチレン基のプロトンが2.4ppmに、
ビニル基に隣接するメチレン基のプロトンが
2.0ppmに、その他のメチレン基のプロトンが0.8
〜1.8ppmに、トリエチルシリル基のメチル基及
びメチレン基のプロトンがそれぞれ0.9ppm,
0.6ppmに、それぞれ4:1:2:2:2:26:
9:6シグナル積分強度比で観測された。
当該化合物をオゾン酸化してビニル基をカルボ
キシル基に変換することにより、両親媒性のジエ
チニルベンゼン誘導体のカルボン酸を合成するこ
とができた。
こうして得られたジエチニルベンゼン誘導体の
カルボン酸を用いて、LB法によりSiO2被覆シリ
コンウエハー上に59層の累積膜を作製した。この
LB膜をフオトレジスト用のマスクで覆い、100W
低圧水銀灯で1分間露光した後、エタノールで1
分間現像した結果、未露光部分のみエタノールに
溶解し、ネガ型パターンを形成することができ
た。
実施例 5
実施例1において、トリメチルシリルクロリド
の代わりにクロロトリヘプチルシランを用いて同
様の反応を行い、ビス−(トリヘプチルシリルエ
チニル)−ベンゼンを得た。この化合物を実施例
1において、ビス−(トリメチルシリルエチニル)
−ベンゼンの代わりに用いて同様の反応を行い、
1−(18−ノナデセン−1−イニル)−4−(トリ
ヘプチルシクルエチニル)−ベンゼンの白色結晶
24m molを得た。
当該化合物をオゾン酸化してビニル基をカルボ
キシル基に変換することにより、両親媒性のジエ
チニルベンゼン誘導体のカルボン酸を合成するこ
とができる。
こうして得られたジエチニルベンゼン誘導体の
カルボン酸を用いて、LB法によりSiO2被覆シリ
コンウエハー上に39層の累積膜を作製した。この
LB膜をフオトレジスト用のマスクで覆い、100W
低圧水銀灯で1分間露光した後、エタノールで1
分間現像した結果、未露光部分のみエタノールに
溶解し、ネガ型のパターンを形成することができ
た。
実施例 6
まず、ω−トリコセノイツクアシド
CH2=CH−(CH2)20−COOHをリチウムアルミ
ニウムハイドライドで還元して、ω−トリコセニ
ルアルコールCH2=CH−(CH2)21−OHを得た。
このω−トリコセニルアルコールを、実施例1に
おいてω−ヘプタデセニルアルコールの代わりに
用いて同様の反応を行い、まず1−(24−ペンタ
コセン−1−イニル)−4−トリメチルシリルエ
チニル)−ベンゼン
40m molを得た。この化合物を実施例2におい
て、1−(18−ノナデセン−1−イニル)−4−
(トリメチルシリルエチニル)−ベンゼンの代わり
に用いて同様の反応を行い、1−エチニル−4−
(24−ペンタコセン−1−イニル)−ベンゼン
15m mol得た。当該化合物をオゾン酸化してビ
ニル基をカルボキシル基に変換することにより、
両親媒性のジエチニルベンゼン誘導体のカルボン
酸を合成することができた。
こうして得られたジエチニルベンゼン誘導体の
カルボン酸を用いて、LB法によりSiO2被覆シリ
コンウエハー上に59層の累積膜を作製した。この
LB膜をフオトレジスト用のマスクで覆い、100W
低圧水銀灯で1分間露光した後、エタノールで1
分間現像した結果、未露光部分のみエタノールに
溶解し、ネガ型のパターンを形成することができ
た。Compounds like [Formula] are already known [JK Crandall et al.
Journal of American Chemical Society, 97
(24), 7171-2 (1975); EARunova et al., Vestn.
Mosk.Univ., Ser.2: Khim., 24(3), 299-300
(1983) etc.]. Diethynylbenzene compounds are resistant to gamma rays, electron beams,
It is sensitive to energy irradiation such as ultraviolet rays, visible light, and infrared rays (heat), but its small molecular weight makes it difficult to produce high-quality thin films, and its sublimation property makes it difficult to handle under reduced pressure. It was hot. The application of the LB method to the production of thin films of compounds with a diethynylbenzene structure is considered, but no diethynylbenzene compounds with the amphiphilic properties necessary for the production of LB films are known, nor are the raw materials for their production known. . (Means for Solving the Problems) In view of these problems, the present inventors developed a diethynylbenzene compound that can be made into a thin film, is non-sublimable, and is applicable to the LB technology. As a result of intensive studies to obtain a diethynylbenzene compound which is a raw material for producing a medium compound, the diethynylbenzene derivative of the present invention was finally obtained. That is, the present invention provides a novel diethynyl compound represented by the general formula below, which has a diethynylbenzene structure and a methylene chain in the molecule, a vinyl group at one molecular end, and a hydrogen or alkylsilyl group at the other molecular end. Regarding benzene derivatives. [R in the formula is hydrogen or -SiX 1 X 2 X 3 , X 1 , X 2 ,
X 3 is each independently hydrogen or an alkyl group having 1 to 7 carbon atoms (except when X 1 , X 2 , and X 3 are all hydrogen), and n is an integer of 9 or more and 21 or less. ] Due to its molecular structural characteristics, the diethynylbenzene derivative of the present invention has C-H stretching vibrations of the benzene ring and vinyl group, C-H stretching vibrations of the methylene group, and C≡C stretching vibrations of 3000 to 3000, respectively, in the IR absorption spectrum. 3080cm -1 , 2850~2960cm -1 , 2010~
Observed at 2260cm -1 I. In addition, absorption peculiar to the benzene ring is observed near 1600 cm -1 and 1500 cm -1 , and C-H out-of-plane bending vibration of the benzene ring is observed between 690 and 860 cm -1 . In addition, in the 1 H-NMR spectrum, the = CH2 and -CH=C protons of the benzene ring and vinyl group are 6.9 to 7.8 ppm, 3.9 to 6.4 ppm, and 3.9 to 6.4 ppm, respectively.
5.3 to 7.3 ppm, and the protrons of methylene groups adjacent to C≡C, methylene groups adjacent to vinyl groups, and other methylene groups are 2.2 to 7.3 ppm, respectively.
Observed at 2.5ppm, 1.8~2.2ppm, and 0.6~1.9ppm. In addition, IR absorption due to the structure of substituent R, 1
H-NMR signals are also observed in each spectrum. In the general formula of the diethynylbenzene derivative of the present invention, the substituent R is hydrogen or -SiX 1 X 2 X 3 , and examples of -SiX 1 X 2 group, tributylsilyl group, triheptylsilyl group, diethylsilyl group, etc. Furthermore, the substitution mode of the two ethynyl groups on the benzene ring may be any of ortho, meta, and para. The diethynylbenzene derivative of the present invention is solid at 15°C and is soluble in solvents such as acetone, methyl ethyl ketone, ethanol, ethyl acetate, chloroform, benzene, and hexane. Next, an example of the method for synthesizing the diethynylbenzene derivative of the present invention will be explained. First, a scheme of the synthesis reaction is shown below. First, using diethynylbenzene 1 as one of the starting materials, two ethynyl groups of diethynylbenzene are metal-halogenated by the Grignard method to obtain compound 2. This compound 2 is converted into X 1 X 2 X 3 SiCl (X 1 ,
X 2 and X 3 are each independently hydrogen or have a carbon number of 1 to
7 alkyl group, X 1 , X 2 , X 3
are not all hydrogen at the same time),
Bisalkylsilylated ethynylbenzene 3 Synthesize. On the other hand, alkenyl alcohol 4 CH 2 = CH- (CH 2 ) o -OH (where n is 9
21 or less) as another starting material and reacted with tosyl chloride to form alkenyl tosylate 5 CH 2 =CH-(CH 2 ) o -OT s (where n is an integer of 9 or more and 21 or less, T s is a tosyl group)
Synthesize. By desilylating one of the alkylsilyl groups of the bisalkylsilylated ethynylbenzene 3 and alkenyl tosylate 5 described above using methyllithium or the like to obtain an organometallic compound 6, and reacting it with the alkenyl tosylate 5, the present invention can be obtained. R of the invention is -SiX 1 X 2 X 3 ( X 1 ,
A diethynylbenzene derivative 7 can be synthesized in which X 2 and X 3 are not all hydrogen at the same time. Moreover, the diethynylbenzene derivative of the present invention in which R is hydrogen, R is an alkylsilyl group, -SiX 1
The above derivative of X 2 It can be obtained by desilylation. However, when using KF as a desilylating agent, it is preferable to use it together with a crown compound. Although an example of the method for producing the diethynylbenzene derivative of the present invention has been described above, the production method is not limited thereto. (Effects of the Invention) The diethynylbenzene derivative of the present invention is capable of forming a thin film and is non-sublimable. Therefore, the diethynylbenzene derivative of the present invention can be used as a pattern-forming material or a heat-sensitive material by forming a thin film, and can be applied as an electronic material such as an organic semiconductor or a conductive material by forming a polymer. It can be used for. Furthermore, the diethynylbenzene derivative of the present invention is
For example, an amphipathic compound can be produced by converting the vinyl group at the end of the molecule into a carboxyl group through an oxidation reaction such as ozone oxidation. It can be applied to forming materials, electronic materials such as conductive materials, or optoelectronic materials such as nonlinear optical materials. The present invention will be explained in more detail with reference to Examples below. Example 1 0.2 mol of p-diethynylbenzene was dissolved in 350 ml of sufficiently dehydrated tetrahydrofuran and heated to -78°C.
Then, 0.4 mol of ethylmagnesium bromide was added and reacted at 25°C for 1 hour. Next, this reaction solution was cooled again to -78℃, and trimethylsilyl chloride was added.
0.4 mol was added and reacted at 25°C for 2 hours to obtain bis-(trimethylsilylethynyl)-benzene. Additionally, 0.04 mol of ω-heptadecenyl alcohol was dissolved in 30 ml of pyridine, and while the reaction vessel was immersed in an ice bath, 0.045 mol of trienesulfonyl chloride (tosyl chloride) was added and reacted at 15°C for 24 hours. Got the rate. Next, bis-(trimethylsilyl)-benzene 0.01
mol was dissolved in 60 ml of sufficiently dehydrated tetrahydrofuran, 0.01 mol of methyllithium was added at -78°C, and the mixture was reacted at 25°C for 2 hours. The reaction solution was cooled again to -78°C, and hexamethylphosphoramide 35
ml and 0.01 mol of heptadecenyl tosylate were added and reacted at 25°C for 1 hour. To this reaction solution were added 250 ml of a saturated aqueous solution of sodium bicarbonate and 180 ml of diethyl ether, and the mixture was thoroughly shaken to extract the product into the ether phase. The ether phase was washed with a saturated aqueous sodium chloride solution and then dehydrated with magnesium sulfate. This ether solution was concentrated to give white yellow crystals. Purification by GPC yielded 1-(18-nonadecen-1-ynyl)-4-(trimethylsilylethynyl)-benzene. 40 mmol of white crystals were obtained. The IR spectrum and 1 H-NMR spectrum of this crystal were measured to investigate its structure.
The IR spectrum obtained by the KBr tablet method is shown in Figure 1. As can be seen from this spectrum, the C-H stretching vibration of the benzene ring and the vinyl group at the end of the molecule is 3020 to 3080 cm -1 , and the C-H stretching vibration of the methyler group is 2850 to 2920 cm -1. The vibration
At 2960cm -1 , the C≡C stretching vibration of -C≡C- is 2150
In cm -1 , the C=C stretching vibration of vinyl group is 1640 cm
-1 , the skeletal vibration of the benzene ring was observed at 1490 cm -1 and the C-H out-of-plane bending vibration of the benzene ring was observed at 840 cm -1 . In addition, 1400cm derived from the methyl group of Si- CH3
-1 , 1240cm -1 , 860cm -1 K derived from Si-C stretching vibration
Absorption was observed. The 1 H-NMR spectrum measured with a deuterated chloroform solution is shown in Figure 2. As you can see from this spectrum, the benzene ring proton is 7.44ppm
, the =CH- proton of the vinyl group is 5.9 ppm,
The =CH 2 proton of vinyl is 5.2ppm, -C≡C
The proton of the methylene group adjacent to the − group is 2.4 ppm
, the proton of the methylene group adjacent to the vinyl group is
2.0 ppm, and 0.8 protons of other methylene groups
At ~1.8ppm, protons of trimethylsilyl group
0.04ppm respectively 4:1:2:2:2:26:9
It was observed with a signal integration degree ratio of . By converting the vinyl group into a carboxyl group by ozone oxidation of the compound, an amphiphilic diethynylbenzene derivative carboxylic acid could be synthesized. Using the thus obtained diethynylbenzene derivative carboxylic acid, a 59-layer cumulative film was fabricated on a SiO 2 -coated silicon wafer by the LB method. this
Cover the LB film with a mask for photoresist and apply 100W
After 1 minute exposure with a low pressure mercury lamp, 1 minute exposure with ethanol
As a result of developing for a minute, only the unexposed areas were dissolved in ethanol, and a negative pattern could be formed. Example 2 1-(18-nonadecene-1 obtained by the method of Example 1)
-ynyl)-4-(trimethylsilylethynyl)-
In a solution of 20 mmol of benzene in tetrahydrofuran,
A solution of (C 4 H 9 ) 4 NF in tetrahydrofuran, (C 4
H 9 ) 4 NF was added in an amount of 25 equivalents of the trimethylsilyl group, and the mixture was stirred at 25° C. for 20 hours to carry out a desilylation reaction. Next, a small amount of water was added to this reaction solution, and after thorough shaking, the ether layer was separated. Repeat this operation to combine the ether layers and concentrate to obtain 1-ethynyl-4-(18nonadecen-1-ynyl)-benzene. 30 mmol of white crystals were obtained. From the IR spectrum,
C-H stretching vibration of benzene ring and vinyl group is 3020
At ~3080cm -1 , the C-H stretching vibration of the methylene group
At 28502920 cm -1 , the C-H stretching vibration and C≡C stretching vibration of the ethynyl group are 3300 cm -1 and 2150 cm -1, respectively.
In addition, the C=C stretching vibration of the vinyl group was observed at 1640 cm -1 , and the skeletal vibration and C-H out-of-plane bending vibration of the benzene ring were observed at 1490 cm -1 and 840 cm -1 I, respectively. The 1 H-NMR spectrum is shown in Figure 3. As can be seen from this spectrum, the benzene ring proton is at 7.44 ppm, the vinyl group's =CH- proton and = CH2 proton are each at 5.0 ppm,
At 5.2ppm, the proton of the ethynyl group at the end of the molecule
3.1 ppm, protons of the methylene group adjacent to -C≡C- are 2.4 ppm, protons of the methylene group adjacent to the vinyl group are 2.0 ppm, protons of other methylene groups are 0.8 to 1.8 ppm, and 4 ppm, respectively. :
It was observed with a signal integrated intensity ratio of 1:2:1:2:2:26. By converting the vinyl group into a carboxyl group by ozone oxidation of the compound, an amphiphilic diethynylbenzene derivative carboxylic acid could be synthesized. Using the thus obtained diethynylbenzene derivative carboxylic acid, a 59-layer cumulative film was fabricated on a SiO 2 -coated silicon wafer by the LB method. this
Cover the LB film with a photoresist mask and apply 100W
After 1 minute exposure with a low pressure mercury lamp, 1 minute exposure with ethanol
As a result of developing for a minute, only the unexposed areas were dissolved in ethanol, and a negative pattern could be formed. Example 3 A similar reaction was carried out in Example 1 using ω-undecylenyl alcohol instead of ω-heptadecenyl alcohol, and first 1-(12-tridecen-1-ynyl)-4-trimethylsilylethynyl ) - benzene 46 mmol was obtained. This compound was used in Example 2 instead of 1-(18-nonadecen-1-ynyl)-4-(trimethylsilylethynyl)-benzene, and 1-ethynyl-4-(12-tridecen-
1-ynyl)-benzene Obtained 34m mol. From the IR spectrum, the C-H stretching vibration of the benzene ring and vinyl group is 3020 to 3080 cm
-1 , the C-H stretching vibration of the methylene group is 28502920cm
-1 , the C-H stretching vibration and C≡C stretching vibration of the ethynyl group are at 3300 cm -1 and 2150 cm -1 , respectively, the C≡C stretching vibration of the vinyl group is at 1640 cm -1 , the skeletal vibration of the benzene ring, and the C -H out-of-plane bending vibration is 1490 each
cm -1 , observed at 840 cm -1 . From the 1 H-NMR spectrum, the benzene ring proton is 7.44 ppm, the =CH- proton and = CH2 proton of the vinyl group are 5.9 ppm and 5.2 ppm, respectively, and the proton of the ethynyl group at the end of the molecule is 3.1 ppm. , the proton of the methylene group adjacent to -C≡C- is 2.4 ppm, and the proton of the methylene group adjacent to the vinyl group is 2.0 ppm.
In addition, the protons of other methylene groups are 0.8~
1.8ppm, respectively 4:1:2:1:2:2:
A signal integrated intensity ratio of 14 was observed. By converting the vinyl group into a carboxyl group by ozone oxidation of the compound, an amphiphilic diethynylbenzene derivative carboxylic acid could be synthesized. Using the diethynylbenzene derivative carboxylic acid thus obtained, a 59-layer cumulative film was fabricated on a SiO 2 -coated silicon wafer by the LB method. this
Cover the photoresist mask with LB film and apply 100w
After 1 minute exposure with a low pressure mercury lamp, 1 minute exposure with ethanol
As a result of developing for a minute, only the unexposed areas were dissolved in ethanol, and a negative pattern could be formed. Example 4 The same reaction as in Example 1 was carried out using chlorotriethylsilane instead of trimethylsilyl chloride to obtain bis-(triethylsilylethynyl)-benzene. A similar reaction was carried out in Example 1 using this compound in place of bis-(trimethylsilylethynyl)-benzene, and 1-
(18-cinadecen-1-ynyl)-4-(triethylsilylethynyl)-benzene white crystal 38m
I got mol. The C-H stretching vibration of the benzene ring and the vinyl group at the end of the molecule was determined from the IR spectrum obtained by the KBr tablet method.
At 3020 to 3080 cm -1 , the cC-H stretching vibration of the methylene group is at 28502920 cm -1 , the C-H stretching vibration of the methyl group is at 2960 cm -1 , and the C≡C stretching vibration of -C≡C-
At 1640cm -1 , the C=C stretching vibration of the vinyl group is 1640cm
-1 , the skeletal vibration of the benzene ring was observed at 1490 cm -1 and the C-H out-of-plane bending vibration of the benzene ring was observed at 840 cm -1 . In addition, 1408 derived from the methylene group of Si-CH 2 CH 3
cm -1 , 1234cm -1 , 860cm -1 derived from Si-C stretching vibration
absorption was observed. In addition, from the 1H -NMR spectrum, the proton of the benzene ring is 7.44 ppm, the proton of =CH- of the vinyl group is 5.9 ppm, the proton of = CH2 of the vinyl group is 5.2 ppm, and the proton of the -C≡C- group is The proton of the adjacent methylene group is 2.4 ppm,
The proton of the methylene group adjacent to the vinyl group
2.0 ppm, and 0.8 protons of other methylene groups
~1.8ppm, the protons of the methyl group and methylene group of the triethylsilyl group are each 0.9ppm,
0.6ppm, respectively 4:1:2:2:2:26:
Observed with a signal integrated intensity ratio of 9:6. By converting the vinyl group into a carboxyl group by ozone oxidation of the compound, an amphiphilic diethynylbenzene derivative carboxylic acid could be synthesized. Using the thus obtained diethynylbenzene derivative carboxylic acid, a 59-layer cumulative film was fabricated on a SiO 2 -coated silicon wafer by the LB method. this
Cover the LB film with a photoresist mask and apply 100W
After 1 minute exposure with a low pressure mercury lamp, 1 minute exposure with ethanol
As a result of developing for a minute, only the unexposed areas were dissolved in ethanol, and a negative pattern could be formed. Example 5 The same reaction as in Example 1 was carried out using chlorotriheptylsilane instead of trimethylsilyl chloride to obtain bis-(triheptylsilylethynyl)-benzene. This compound was used in Example 1 as bis-(trimethylsilylethynyl)
- Carry out a similar reaction using instead of benzene,
White crystals of 1-(18-nonadecen-1-ynyl)-4-(triheptylcycluethynyl)-benzene
24 mmol was obtained. By converting the vinyl group into a carboxyl group by ozone oxidation of the compound, an amphipathic diethynylbenzene derivative carboxylic acid can be synthesized. Using the thus obtained diethynylbenzene derivative carboxylic acid, a 39-layer cumulative film was fabricated on a SiO 2 -coated silicon wafer by the LB method. this
Cover the LB film with a photoresist mask and apply 100W
After 1 minute exposure with a low pressure mercury lamp, 1 minute exposure with ethanol
As a result of developing for a minute, only the unexposed areas were dissolved in ethanol, and a negative pattern could be formed. Example 6 First, ω-tricosenyl alcohol CH 2 =CH-(CH 2 ) 20 -COOH is reduced with lithium aluminum hydride to form ω-tricosenyl alcohol CH 2 =CH-(CH 2 ) 21 -OH I got it.
A similar reaction was carried out using this ω-tricocenyl alcohol in place of ω-heptadecenyl alcohol in Example 1. First, 1-(24-pentacocen-1-ynyl)-4-trimethylsilylethynyl)- benzene 40mmol was obtained. This compound was used in Example 2 as 1-(18-nonadecen-1-ynyl)-4-
A similar reaction was carried out using (trimethylsilylethynyl)-benzene instead of 1-ethynyl-4-
(24-pentacocen-1-ynyl)-benzene 15mmol was obtained. By oxidizing the compound with ozone and converting the vinyl group into a carboxyl group,
We were able to synthesize amphiphilic diethynylbenzene derivative carboxylic acid. Using the thus obtained diethynylbenzene derivative carboxylic acid, a 59-layer cumulative film was fabricated on a SiO 2 -coated silicon wafer by the LB method. this
Cover the LB film with a photoresist mask and apply 100W
After 1 minute exposure with a low pressure mercury lamp, 1 minute exposure with ethanol
As a result of developing for a minute, only the unexposed areas were dissolved in ethanol, and a negative pattern could be formed.
第1図はKBr錠剤法により測定した1−(18−
ノナデセン−1−イニル)−4−(トリトメチルシ
リルエチニル)−ベンゼンのIRスペクトル、第2
図は重クロロホルム中での1−(18−ノナデセン
−1−イニル)−4−(トリメチルシリルエチニ
ル)−ベンゼンの1H−NMRスペクトル、第3図
は重クロロホルム中での1−エチニル−4−(18
−ノナデセン−1−イニル)−ベンゼンの1H−
NMRスペクトルである。
Figure 1 shows 1-(18-
IR spectrum of nonadecen-1-ynyl)-4-(tritomethylsilylethynyl)-benzene, 2nd
The figure shows the 1 H-NMR spectrum of 1-(18-nonadecen-1-ynyl)-4-(trimethylsilylethynyl)-benzene in deuterated chloroform, and Figure 3 shows the 1-ethynyl-4-( 18
-nonadecen-1-ynyl)-benzene 1H-
This is an NMR spectrum.
Claims (1)
X2,X3はそれぞれ独立に水素又は炭素数が1〜
7のアルキル基(ただし、X1,X2,X3がすべて
水素の場合は除く)で、かつnは9以上21以下の
整数である〕で表されるジエチニルベンゼン誘導
体[Claims] 1. General formula [R in the formula is hydrogen or -SiX 1 X 2 X 3 , X 1 ,
X 2 and X 3 are each independently hydrogen or have a carbon number of 1 to
7 alkyl group (excluding cases where X 1 , X 2 , and X 3 are all hydrogen), and n is an integer of 9 or more and 21 or less]
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1134087A JPS63179836A (en) | 1987-01-22 | 1987-01-22 | Diethynylbenzene derivative |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1134087A JPS63179836A (en) | 1987-01-22 | 1987-01-22 | Diethynylbenzene derivative |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63179836A JPS63179836A (en) | 1988-07-23 |
| JPH0433772B2 true JPH0433772B2 (en) | 1992-06-04 |
Family
ID=11775301
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1134087A Granted JPS63179836A (en) | 1987-01-22 | 1987-01-22 | Diethynylbenzene derivative |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63179836A (en) |
-
1987
- 1987-01-22 JP JP1134087A patent/JPS63179836A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63179836A (en) | 1988-07-23 |
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