JPH0434316B2 - - Google Patents
Info
- Publication number
- JPH0434316B2 JPH0434316B2 JP16654083A JP16654083A JPH0434316B2 JP H0434316 B2 JPH0434316 B2 JP H0434316B2 JP 16654083 A JP16654083 A JP 16654083A JP 16654083 A JP16654083 A JP 16654083A JP H0434316 B2 JPH0434316 B2 JP H0434316B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- current blocking
- active layer
- conductivity type
- blocking layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2237—Buried stripe structure with a non-planar active layer
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16654083A JPS6058689A (ja) | 1983-09-12 | 1983-09-12 | 半導体レ−ザ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16654083A JPS6058689A (ja) | 1983-09-12 | 1983-09-12 | 半導体レ−ザ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6058689A JPS6058689A (ja) | 1985-04-04 |
| JPH0434316B2 true JPH0434316B2 (cs) | 1992-06-05 |
Family
ID=15833170
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16654083A Granted JPS6058689A (ja) | 1983-09-12 | 1983-09-12 | 半導体レ−ザ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6058689A (cs) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3884881T2 (de) * | 1987-08-04 | 1994-02-10 | Sharp Kk | Halbleiterlaservorrichtung. |
-
1983
- 1983-09-12 JP JP16654083A patent/JPS6058689A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6058689A (ja) | 1985-04-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2008135786A (ja) | 高出力半導体レーザダイオード | |
| US4797890A (en) | Semiconductor light emitting device with vertical light emission | |
| KR100773677B1 (ko) | 반도체 레이저 소자 및 그 제조 방법 | |
| JPS6343908B2 (cs) | ||
| JPH06181363A (ja) | 半導体レーザ及びその製造方法 | |
| JP7145936B2 (ja) | 半導体レーザおよびその製造方法 | |
| JPS60149183A (ja) | 分布帰還形半導体レ−ザ | |
| US4759025A (en) | Window structure semiconductor laser | |
| JP6925540B2 (ja) | 半導体光素子 | |
| JPH0671121B2 (ja) | 半導体レーザ装置 | |
| JP2862889B2 (ja) | 半導体レーザ装置 | |
| JPH0474876B2 (cs) | ||
| JP2549182B2 (ja) | 半導体レーザ素子 | |
| JPS6386579A (ja) | 発光ダイオ−ド | |
| JP3617119B2 (ja) | スーパールミネッセントダイオード | |
| KR100278626B1 (ko) | 반도체 레이저 다이오드 | |
| JPS6058689A (ja) | 半導体レ−ザ | |
| JPS621277B2 (cs) | ||
| JP3234282B2 (ja) | 半導体レーザ素子 | |
| JPH0433386A (ja) | 端面出射型半導体発光素子およびその駆動方法 | |
| JP2872741B2 (ja) | 端面発光型ダイオード及びその製造方法 | |
| JP2004095822A (ja) | 半導体レーザ素子 | |
| US4868837A (en) | Semiconductor laser | |
| JP2815936B2 (ja) | ブロードエリアレーザ | |
| JPS6155276B2 (cs) |