JPS6058689A - 半導体レ−ザ - Google Patents

半導体レ−ザ

Info

Publication number
JPS6058689A
JPS6058689A JP16654083A JP16654083A JPS6058689A JP S6058689 A JPS6058689 A JP S6058689A JP 16654083 A JP16654083 A JP 16654083A JP 16654083 A JP16654083 A JP 16654083A JP S6058689 A JPS6058689 A JP S6058689A
Authority
JP
Japan
Prior art keywords
layer
groove
active layer
conductivity type
resonator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16654083A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0434316B2 (cs
Inventor
Jun Osawa
大沢　潤
Kenji Ikeda
健志 池田
Wataru Suzaki
須崎　渉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP16654083A priority Critical patent/JPS6058689A/ja
Publication of JPS6058689A publication Critical patent/JPS6058689A/ja
Publication of JPH0434316B2 publication Critical patent/JPH0434316B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2237—Buried stripe structure with a non-planar active layer

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP16654083A 1983-09-12 1983-09-12 半導体レ−ザ Granted JPS6058689A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16654083A JPS6058689A (ja) 1983-09-12 1983-09-12 半導体レ−ザ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16654083A JPS6058689A (ja) 1983-09-12 1983-09-12 半導体レ−ザ

Publications (2)

Publication Number Publication Date
JPS6058689A true JPS6058689A (ja) 1985-04-04
JPH0434316B2 JPH0434316B2 (cs) 1992-06-05

Family

ID=15833170

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16654083A Granted JPS6058689A (ja) 1983-09-12 1983-09-12 半導体レ−ザ

Country Status (1)

Country Link
JP (1) JPS6058689A (cs)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4926431A (en) * 1987-08-04 1990-05-15 Sharp Kabushiki Kaisha Semiconductor laser device which is stable for a long period of time

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4926431A (en) * 1987-08-04 1990-05-15 Sharp Kabushiki Kaisha Semiconductor laser device which is stable for a long period of time

Also Published As

Publication number Publication date
JPH0434316B2 (cs) 1992-06-05

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