JPH04346228A - Method for grinding semiconductor wafer - Google Patents

Method for grinding semiconductor wafer

Info

Publication number
JPH04346228A
JPH04346228A JP14657291A JP14657291A JPH04346228A JP H04346228 A JPH04346228 A JP H04346228A JP 14657291 A JP14657291 A JP 14657291A JP 14657291 A JP14657291 A JP 14657291A JP H04346228 A JPH04346228 A JP H04346228A
Authority
JP
Japan
Prior art keywords
grinding
semiconductor wafer
wheel type
cup wheel
grinding wheel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14657291A
Other languages
Japanese (ja)
Inventor
Saburo Sekida
関田 三郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shibayama Kikai Co Ltd
Original Assignee
Shibayama Kikai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shibayama Kikai Co Ltd filed Critical Shibayama Kikai Co Ltd
Priority to JP14657291A priority Critical patent/JPH04346228A/en
Publication of JPH04346228A publication Critical patent/JPH04346228A/en
Pending legal-status Critical Current

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  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

PURPOSE:To provide a method for performing finish grinding of a semiconductor wafer requesting high quality, high and accurate flatness, large diameter and extremely small thickness by using an automatic plane grinding machine. CONSTITUTION:A chuck mechanism 2, a semiconductor wafer W, a cup wheel type grinding whetstone 3, and a spindle axis 6 with an elevation means 4 are provided, the cup wheel type grinding whetstone 3 is lowered to the semiconductor wafer W at an extremely slow speed by the elevation means 4 for finish- grinding, elevation is stopped for a certain amount of time after grinding is completed, and at the same time the semiconductor wafer W is raised at an extremely slow speed when leaving the cup wheel type grinding whetstone 3. Thus a grinding machining can cope with a semiconductor wafer W which needs to be of large diameter, and extremely small thickness, and which has a brittleness and furthermore the grinding whetstone makes no mark on a semiconductor wafer upon separating from the wafer.

Description

【発明の詳細な説明】[Detailed description of the invention]

【0001】0001

【産業上の利用分野】本発明は、自動平面研削盤の半導
体ウエハの研削方法に関するもので、詳しくは、仕上り
面の高精度化、拡径化、極薄化が要求される半導体ウエ
ハを信頼性の高い高品質の仕上げ研削する方法に関する
ものである。
[Industrial Application Field] The present invention relates to a method for grinding semiconductor wafers using an automatic surface grinder, and more specifically, the present invention relates to a method for grinding semiconductor wafers using an automatic surface grinder. The present invention relates to a method for high-quality finish grinding with high performance.

【0002】0002

【従来技術とその問題点】近年、この種の半導体ウエハ
は製品の歩留まりの関係から、仕上り面の高精度化、加
えて、極薄化、拡径化も要求されており、其れに伴って
半導体ウエハを研削加工する自動研削盤も仕上り面の高
精度化、極薄化、拡径化に対応できる機構が求められて
いるが、その対応が急務である。
[Prior art and its problems] In recent years, this type of semiconductor wafer has been required to have a highly accurate finished surface, as well as to be ultra-thin and enlarged in diameter due to product yield issues. Automatic grinding machines that grind semiconductor wafers are also required to have a mechanism that can handle higher precision finished surfaces, ultra-thin surfaces, and larger diameters, which is an urgent task.

【0003】従来の研削方法は半導体ウエハの設定され
た削り代を数段階に分けて切り込み量を設定して研削砥
石を降下させて研削するか、或いは、一定の切り込み量
に設定した研削砥石を半導体ウエハの一側の外周方向か
ら他側まで水平方向に切り込む方法がとられており、高
品質化、極薄化、拡径化を要求される脆性の半導体ウエ
ハは割れたり、欠けたり、或いは、研削加工時のダメー
ジが残り、能率的とはいえないものであり、又、研削加
工を施した後に、直ぐに、カップホイール型研削砥石の
研削面を半導体ウエハの上面から上昇させて離脱させて
おり、そのために、カップホイール型研削砥石そのもの
が有する弾性、又は、スピンドル軸が有する弾性、或い
は、スピンドル軸の担持強度、軸受の精度等による撓み
量の関係から、半導体ウエハの上面にカップホイール型
研削砥石の研削面が離脱する時に、僅かに離脱痕が線状
に残留し、研削後の半導体ウエハの厚さ、平行度、平坦
度、面粗度等の仕上り精度の向上を阻害していた。
[0003] Conventional grinding methods involve dividing the predetermined cutting allowance of the semiconductor wafer into several stages, setting the depth of cut, and lowering the grinding wheel for grinding, or grinding by lowering the grinding wheel, which is set to a constant depth of cut. This method involves cutting horizontally from the outer circumference of one side of the semiconductor wafer to the other side.Brittle semiconductor wafers that require high quality, ultra-thinness, and enlargement in diameter are prone to cracking, chipping, or , the grinding process leaves damage and cannot be called efficient, and the grinding surface of the cup wheel type grinding wheel must be lifted and removed from the top surface of the semiconductor wafer immediately after the grinding process is performed. Therefore, due to the elasticity of the cup wheel type grinding wheel itself, the elasticity of the spindle shaft, the support strength of the spindle shaft, the precision of the bearing, etc., a cup wheel type grinding wheel is formed on the top surface of the semiconductor wafer. When the grinding surface of the grinding wheel detaches, a slight linear trace remains, which hinders the improvement of finishing accuracy such as thickness, parallelism, flatness, and surface roughness of semiconductor wafers after grinding. .

【発明の目的】[Purpose of the invention]

【0004】本発明は前述の事由に鑑みて、前述の問題
点を解決すべく鋭意研鑽の結果、半導体ウエハの高品質
化、極薄化、拡径化に充分に対処できるもので、特に、
仕上げ研削された鏡面の半導体ウエハの上面にできる研
削砥石との離脱痕を防止することで厚さ、平行度、平坦
度、面粗度等の仕上り精度を向上させた研削方法に創達
し、これを供する目的のものである。
[0004] In view of the above-mentioned reasons, the present invention has been made as a result of intensive research to solve the above-mentioned problems, and is capable of sufficiently coping with the improvement of quality, ultra-thinness, and diameter expansion of semiconductor wafers.
We have created a grinding method that improves finish accuracy in terms of thickness, parallelism, flatness, surface roughness, etc. by preventing separation marks from the grinding wheel that form on the top surface of mirror-finished semiconductor wafers. The purpose is to provide

【発明の構成】[Structure of the invention]

【0005】本発明の構成は、チャック機構と、半導体
ウエハと、カップホイール型研削砥石と、昇降手段を介
設して昇降自在に基体に担持されたスピンドル軸とを備
え、チャック機構の回転軸芯とスピンドル軸の回転軸芯
とを略平行状態で且つカップホイール型研削砥石の研削
面は半導体ウエハの中心点を通過する一定間隔を有して
配設された自動平面研削盤を用いて、半導体ウエハへ昇
降手段で微速度でカップホイール型研削砥石を降下させ
て仕上げ研削し、研削終了後の最下位置で一定時間昇降
を停止させると共に、半導体ウエハとカップホイール型
研削砥石とを離脱させるとき微速度で上昇させるもので
ある。
The configuration of the present invention includes a chuck mechanism, a semiconductor wafer, a cup wheel type grinding wheel, and a spindle shaft supported on a base so that it can be raised and lowered by interposing a lifting means, and the rotating shaft of the chuck mechanism Using an automatic surface grinder in which the core and the rotational axis of the spindle shaft are approximately parallel to each other, and the grinding surface of the cup wheel type grinding wheel is arranged at a constant interval passing through the center point of the semiconductor wafer, The cup wheel type grinding wheel is lowered onto the semiconductor wafer at a very low speed by the lifting means to perform final grinding, and after finishing the grinding, the lifting and lowering is stopped for a certain period of time at the lowest position, and the semiconductor wafer and the cup wheel type grinding wheel are separated. It is meant to be raised at a very slow rate.

【発明の実施例】[Embodiments of the invention]

【0006】斯る目的を達成せしめた本発明の半導体ウ
エハの研削方法を実施例の図面によって説明する。
The semiconductor wafer grinding method of the present invention, which achieves the above object, will be explained with reference to the drawings of the embodiments.

【0007】図1は本発明の実施例の自動平面研削盤を
説明するための概要平面説明図であり、図2は本発明の
概要側面説明図である。
FIG. 1 is a schematic plan view for explaining an automatic surface grinder according to an embodiment of the present invention, and FIG. 2 is a schematic side view for explaining the present invention.

【0008】本発明は自動平面研削盤の半導体ウエハW
の研削方法に関するもので、詳しくは、半導体ウエハW
の上面の設定量の削り代を研削終了後に一定時間昇降を
停止させると共に、半導体ウエハWとカップホイール型
研削砥石3を離脱させるときに微速度で上昇させること
によって、鏡面研削する方法に関するものであり、テー
ブル1へ嵌着され且つ自回転するチャック機構2と、該
チャック機構2へバキューム吸着される半導体ウエハW
と、該半導体ウエハWの上面を鏡面研削するために上方
に配設されたカップホイール型研削砥石3と、該カップ
ホイール型研削砥石3を下端へ固定し昇降手段4を介設
させて昇降自在に基体5へ担持され且つ自回転するスピ
ンドル軸6とを備え、前記チャック機構2の回転軸芯a
と前記スピンドル軸6の回転軸芯bとを略平行状態で且
つカップホイール型研削砥石3の研削面は少なくとも半
導体ウエハWの中心点を通過する一定間隔を有して配設
された自動平面研削盤を用いて、前記半導体ウエハWの
上面へ前記昇降手段4で一定微速度でカップホイール型
研削砥石3を降下させて設定量の削り代を仕上げ研削し
、設定量の削り代を研削終了後の最下位置で一定時間昇
降を停止させると共に、前記半導体ウエハWの上面と前
記カップホイール型研削砥石3の研削面とを離脱させる
とき前記昇降手段4によって微速度で上昇させるもので
ある。
The present invention provides a semiconductor wafer W for an automatic surface grinding machine.
Regarding the grinding method of semiconductor wafer W.
This method relates to a method for mirror-finishing the upper surface by stopping the lifting and lowering for a certain period of time after grinding is completed, and raising the grinding wheel at a very slow speed when separating the semiconductor wafer W and the cup wheel type grinding wheel 3. A chuck mechanism 2 that is fitted onto the table 1 and rotates by itself, and a semiconductor wafer W that is vacuum-adsorbed to the chuck mechanism 2.
, a cup wheel type grinding wheel 3 disposed above for mirror-grinding the upper surface of the semiconductor wafer W, and a cup wheel type grinding wheel 3 fixed to the lower end and movable up and down with a lifting means 4 interposed therebetween. and a spindle shaft 6 which is supported on the base body 5 and rotates by itself, and the rotation axis a of the chuck mechanism 2 is
and the rotational axis b of the spindle shaft 6 are substantially parallel to each other, and the grinding surface of the cup wheel type grinding wheel 3 is arranged at a constant interval so as to pass through at least the center point of the semiconductor wafer W. Using a disk, the cup wheel type grinding wheel 3 is lowered to the upper surface of the semiconductor wafer W at a constant slow speed by the elevating means 4 to perform finish grinding to remove a set amount of cutting allowance, and after finishing the grinding, the set amount of cutting allowance is completed. The vertical movement is stopped for a certain period of time at the lowest position of the semiconductor wafer W, and when the upper surface of the semiconductor wafer W and the grinding surface of the cup wheel type grinding wheel 3 are separated, the vertical movement is raised at a very slow speed by the vertical movement means 4.

【0009】通常、この種の自動平面研削盤の被研削物
である半導体ウエハWの作動状態を具体的に説明すると
、図1に図示の如く、先ず、多数枚の半導体ウエハWを
単品毎に梯子形仕切り枠で集積格納され昇降可動かつ前
面が開放されている送出側カートリッジ11の直前の下
方辺に設けられた送出側搬送ベルト12によって、半導
体ウエハWが該送出側搬送ベルト12上へ案内載置され
、送出側搬送ベルト12の上の半導体ウエハWは下方に
位置し反転可能な送出側反転アーム13の先端に設けた
吸着パット14へ吸着され、該送出側反転アーム13が
反転することによって、プリポジション15に載置され
、次ぎに、半導体ウエハWは昇降自在で且つ水平方向へ
回動機構を有するウエハ移送アーム16の先端へ設けた
吸着パット17の下面にバキューム吸着されて、研削盤
のロータリーテーブル1上に移送されるものである。
To specifically explain the operating state of a semiconductor wafer W, which is normally an object to be ground in this type of automatic surface grinding machine, as shown in FIG. Semiconductor wafers W are guided onto the delivery-side conveyor belt 12 provided on the lower side immediately before the delivery-side cartridge 11 which is stored in a ladder-shaped partition frame and is movable up and down and whose front side is open. The semiconductor wafer W placed on the delivery-side conveyor belt 12 is attracted to a suction pad 14 provided at the tip of a delivery-side reversing arm 13 located below and capable of reversing, and the delivery-side reversing arm 13 is reversed. The semiconductor wafer W is then placed on the preposition 15 by vacuum suction on the lower surface of a suction pad 17 provided at the tip of a wafer transfer arm 16 which can be raised and lowered and has a rotation mechanism in the horizontal direction. It is transferred onto the rotary table 1 of the board.

【0010】そして、前記ロータリーテーブル1には夫
々に自回転する円形状のバキューム吸着する複数のチャ
ック機構2を備え、ロータリーテーブル1は自動的に回
転、停止を間欠的に繰返しており、停止位置で夫々のチ
ャック機構2の上方から先端へカップホイール型研削砥
石3を固定したスピンドル軸6が下降して、各チャック
機構2上で予め設定された削り代の研削を半導体ウエハ
Wの上面に施すものである。
The rotary table 1 is equipped with a plurality of self-rotating circular vacuum suction chuck mechanisms 2, and the rotary table 1 automatically rotates and stops intermittently, and when the stop position is reached. Then, the spindle shaft 6 to which the cup wheel type grinding wheel 3 is fixed descends from above to the tip of each chuck mechanism 2, and the upper surface of the semiconductor wafer W is ground by a preset cutting allowance on each chuck mechanism 2. It is something.

【0011】前記半導体ウエハWはウエハ移送アーム1
6で前記チャック機構2上に正確にセットされると共に
、該チャック機構2にバキューム吸着されるものであり
、半導体ウエハWはチャック機構2と共にロータリーテ
ーブル1の回動によって、次の加工位置へと移行し、夫
々の加工位置で所定の求められる厚さに研削が施され加
工が完了するとスピンドル軸6を上昇させて、再び、ロ
ータリーテーブル1の回転によって次停止位置まで運ば
れ、該停止位置で別のスピンドル軸6が降下して順次研
削が施され、そして、洗浄位置で洗浄され、ロータリー
テーブル1は一定の停止時間を保ちながら間欠的に且つ
エンドレス的に回転しているものである。
The semiconductor wafer W is transferred to the wafer transfer arm 1.
At 6, the semiconductor wafer W is accurately set on the chuck mechanism 2 and vacuum-adsorbed onto the chuck mechanism 2, and the semiconductor wafer W is moved to the next processing position by the rotation of the rotary table 1 together with the chuck mechanism 2. When the grinding is completed to the required thickness at each processing position, the spindle shaft 6 is raised, and the rotary table 1 rotates again to carry it to the next stop position. Another spindle shaft 6 is lowered to perform grinding one after another, and then is cleaned at a cleaning position, and the rotary table 1 is rotated intermittently and endlessly while maintaining a fixed stop time.

【0012】半導体ウエハWは最終の仕上げ研削を施さ
れ、洗浄された後に、前述のウエハ移送アーム16と逆
の作用によってウエハ移送アーム18の吸着パット19
吸着され、洗浄乾燥装置20で洗浄乾燥されて格納側反
転アーム21に設けられた吸着パット22で格納側搬送
ベルト23へ載置され、格納側カートリッジ24内の側
壁部に設けられた梯子形仕切り枠へ該カートリッジの昇
降によって単品毎に再び集積格納されているものである
After the semiconductor wafer W is subjected to final finishing grinding and cleaning, the suction pad 19 of the wafer transfer arm 18 is moved by the reverse action of the wafer transfer arm 16 described above.
It is adsorbed, washed and dried by a washing and drying device 20, placed on a storage conveyor belt 23 by a suction pad 22 provided on a reversing arm 21 on a storage side, and a ladder-shaped partition provided on a side wall inside a cartridge 24 on a storage side. By raising and lowering the cartridge into the frame, each item is again collected and stored.

【0013】本発明を実施する平面自動研削盤はこの様
に構成されており、前述の作動が自動的かつ規則的に繰
り返され、送出側カートリッジ11から送出された半導
体ウエハWは、順次可動位置へ案内され、研削され、洗
浄され、格納される仕組と成るものである。
The automatic surface grinding machine embodying the present invention is constructed as described above, and the above-mentioned operations are automatically and regularly repeated, and the semiconductor wafers W delivered from the delivery cartridge 11 are sequentially moved to movable positions. The material is guided to the surface, ground, cleaned, and stored.

【0014】即ち、自動平面研削盤のロータリーテーブ
ル1は間欠的に回転及び停止を繰り返しているものであ
り、複数のチャック機構2は頂面を突出させた状態で複
数個が夫々嵌着されているもので、該夫々のチャック機
構2はロータリーテーブル1の回転駆動源と共有して夫
々が独自に自回転しているものであり、そして、前記ロ
ータリーテーブル1を貫通させた通気系によって真空ポ
ンプ等のバキューム機構へ連繋され、半導体ウエハWは
バキューム機構によってチャック機構2の上面へ確りと
バキューム吸着されると、チャック機構2の上方よりス
ピンドル軸6の下端へ固定したカップホイール型研削砥
石3が降下して研削を開始するものである。
That is, the rotary table 1 of the automatic surface grinding machine repeatedly rotates and stops intermittently, and the plurality of chuck mechanisms 2 are fitted into each other with their top surfaces protruding. Each of the chuck mechanisms 2 shares the rotational drive source of the rotary table 1 and rotates independently, and a vacuum pump is operated by a ventilation system passing through the rotary table 1. When the semiconductor wafer W is firmly vacuum-adsorbed onto the upper surface of the chuck mechanism 2 by the vacuum mechanism, a cup wheel type grinding wheel 3 fixed to the lower end of the spindle shaft 6 from above the chuck mechanism 2 is attached. It descends and starts grinding.

【0015】前記スピンドル軸6は基体5へ昇降手段4
を介して昇降自在に担持され、電動機M等の駆動源によ
って自回転をしているものであり、カップホイール型研
削砥石3もそれに伴って回転しているものであり、前記
昇降手段4は図2に図示の如く駆動源の電動機Mを基体
5に組設し、該電動機Mの回転軸4aに回転調整機構4
bを介設して棒状の螺条4cを設け、該螺条4cと螺合
する雌螺子を有するガイド4dを設けたスピンドル軸6
であり、機械的な機構を用いても、空気圧、油圧等を用
いたものでも、脆性の半導体ウエハWにダメージが加わ
らない微速度調整が可能なものなら構わないものである
The spindle shaft 6 is moved to the base body 5 by means of elevating and lowering the means 4.
The grinding wheel 3 is supported in such a way that it can be raised and lowered freely, and is self-rotating by a drive source such as an electric motor M, and the cup wheel type grinding wheel 3 is also rotated accordingly. As shown in FIG. 2, an electric motor M as a drive source is assembled on a base 5, and a rotation adjustment mechanism 4 is attached to a rotation shaft 4a of the electric motor M.
A spindle shaft 6 is provided with a bar-shaped thread 4c interposed therebetween, and a guide 4d having a female thread that engages with the thread 4c.
Therefore, it does not matter if a mechanical mechanism, pneumatic pressure, hydraulic pressure, etc. are used, as long as the fine speed adjustment is possible without damaging the fragile semiconductor wafer W.

【0016】前記チャック機構2の回転軸芯aとスピン
ドル軸6の回転軸芯bとを略平行状態に維持させたもの
で、つまり、半導体ウエハWの上面とカップホイール型
研削砥石3の研削面とも略平行状態となるものであり、
略平行状態とはカップホイール型研削砥石3の研削面と
半導体ウエハWの上面とは僅かに傾斜させて、研削抵抗
を低下させると共に、半導体ウエハWの回転の中芯へ小
突起を残さないようにスピンドル軸6を微揺動させてい
るものであり、そして、カップホイール型研削砥石3の
研削面は少なくとも半導体ウエハWの中心点を通過する
ように夫々の回転軸芯a.bは一定間隔を有して配設さ
れ、カップホイール型研削砥石3の研削面と研削される
半導体ウエハWの上面との研削時の干渉領域での周速度
を一定化しているものである。
The rotation axis a of the chuck mechanism 2 and the rotation axis b of the spindle shaft 6 are maintained in a substantially parallel state, that is, the upper surface of the semiconductor wafer W and the grinding surface of the cup wheel type grinding wheel 3. Both are in a nearly parallel state,
The substantially parallel state means that the grinding surface of the cup wheel type grinding wheel 3 and the top surface of the semiconductor wafer W are slightly inclined to reduce the grinding resistance and to avoid leaving small protrusions on the center of rotation of the semiconductor wafer W. The spindle shaft 6 is slightly oscillated at the center of each rotating axis a. so that the grinding surface of the cup wheel type grinding wheel 3 passes through at least the center point of the semiconductor wafer W. b are arranged at regular intervals to keep the circumferential speed constant in the interference region during grinding between the grinding surface of the cup wheel type grinding wheel 3 and the upper surface of the semiconductor wafer W to be ground.

【0017】前記半導体ウエハWの上面へ前記昇降手段
4で一定微速度でカップホイール型研削砥石3を降下さ
せて設定量の削り代を仕上げ研削することと、設定量の
削り代を研削終了後の最下位置で一定時間昇降を停止さ
せて、カップホイール型研削砥石そのものが有する弾性
、又は、スピンドル軸が有する弾性、或いは、スピンド
ル軸の担持強度、軸受の精度等による撓み量を戻すと共
に、前記半導体ウエハWの上面と前記カップホイール型
研削砥石3の研削面とを離脱させるとき前記昇降手段4
によって微速度で上昇させることによって、従来、半導
体ウエハWの上面に残留していた離脱痕を皆無として、
高精度化、拡径化、極薄化が要望される半導体ウエハW
の研削加工に対処でき、本発明の方法は最終の仕上げ研
削の工程で施すものであるが、より仕上り面精度化を得
るためと全工程の時間的バランスをとるために全研削工
程に実施しても構わないものである。
The cup wheel type grinding wheel 3 is lowered to the upper surface of the semiconductor wafer W at a constant slow speed by the elevating means 4 to finish grinding a set amount of cutting stock, and after the grinding is finished, the set amount of cutting stock is finished. The lifting and lowering is stopped for a certain period of time at the lowest position of the grinding wheel, and the amount of deflection due to the elasticity of the cup wheel type grinding wheel itself, the elasticity of the spindle shaft, the support strength of the spindle shaft, the accuracy of the bearing, etc. is restored, and When separating the upper surface of the semiconductor wafer W from the grinding surface of the cup wheel type grinding wheel 3, the elevating means 4
By raising the semiconductor wafer W at a very slow speed, there are no separation marks left on the top surface of the semiconductor wafer W in the past.
Semiconductor wafers W that require higher precision, larger diameter, and ultra-thinness
The method of the present invention is applied in the final finish grinding process, but in order to obtain a more accurate finished surface and to balance the time of all processes, the method of the present invention is applied during the entire grinding process. It is okay to do so.

【0018】そして、前述の説明は回転式のロータリー
テーブルについて本発明の方法を説明したが、これに限
定されることなく割り出し式のインデックステーブル等
のチャック機構にも適応するものである。
Although the method of the present invention has been described above with respect to a rotating rotary table, the present invention is not limited thereto, and can be applied to a chuck mechanism such as an indexing type index table.

【0019】[0019]

【発明の効果】本発明の効果は、前述の構成によって、
自動平面研削盤のスピンドル軸の昇降を、昇降手段によ
って微速度で降下させて研削し、最下位置で一定時間停
止させると共に、上昇を微速度にすることによって、拡
径化、極薄化が要望され、且つ、脆性の特性を有する半
導体ウエハの研削加工にも対処でき、加えて、最終研削
後の半導体ウエハの鏡面にできる研削砥石の離脱痕を防
止することができ、半導体ウエハの全面にわたっての仕
上り面精度を向上させた画期的な研削方法であり、信頼
度も高く、極めて有意義な効果を奏することができるも
のである。
[Effects of the Invention] The effects of the present invention are achieved by the above-mentioned configuration.
By raising and lowering the spindle shaft of an automatic surface grinding machine at a very slow speed using a lifting means, grinding is performed, stopping at the lowest position for a certain period of time, and raising the shaft at a very slow speed. It is possible to handle the grinding of semiconductor wafers that are required and have brittle characteristics.In addition, it is possible to prevent the separation marks of the grinding wheel from being formed on the mirror surface of the semiconductor wafer after final grinding, and it can be applied over the entire surface of the semiconductor wafer. This is an innovative grinding method that improves the precision of the finished surface, is highly reliable, and can produce extremely significant effects.

【0020】[0020]

【図面の簡単な説明】[Brief explanation of drawings]

【図1】図1は本発明の実施例の自動平面研削盤を説明
するための概要平面説明図である。
FIG. 1 is a schematic plan view for explaining an automatic surface grinder according to an embodiment of the present invention.

【図2】図2は本発明の概要側面説明図である。FIG. 2 is a schematic side view of the present invention.

【0021】[0021]

【符号の説明】[Explanation of symbols]

W      半導体ウエハ a      チャック機構の回転軸芯b      
スピンドル軸の回転軸芯1      テーブル 2      チャック機構 3      カップホイール型研削砥石4     
 昇降手段 4a    回転軸 4b    回転調整機構 4c    螺条 4d    ガイド 5      基体 6      スピンドル軸 M      電動機 11    送出側カートリッジ 12    送出側搬送ベルト 13    送出側反転アーム 14    吸着パット 15    プリポジション 16    ウエハ移送アーム 17    吸着パット 18    ウエハ移送アーム 19    吸着パット 20    洗浄乾燥装置 21    格納側反転アーム 22    吸着パット 23    格納側搬送ベルト 24    格納側カートリッジ
W Semiconductor wafer a Rotation axis of chuck mechanism b
Spindle shaft rotation axis 1 Table 2 Chuck mechanism 3 Cup wheel type grinding wheel 4
Lifting means 4a Rotation shaft 4b Rotation adjustment mechanism 4c Thread 4d Guide 5 Base 6 Spindle shaft M Electric motor 11 Sending-side cartridge 12 Sending-side conveyor belt 13 Sending-side reversing arm 14 Suction pad 15 Pre-position 16 Wafer transfer arm 17 Suction pad 18 Wafer Transfer arm 19 Suction pad 20 Washing/drying device 21 Storage side reversing arm 22 Suction pad 23 Storage side conveyor belt 24 Storage side cartridge

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】テーブルへ嵌着され且つ自回転するチャッ
ク機構と、該チャック機構へバキューム吸着される半導
体ウエハと、該半導体ウエハの上面を鏡面研削するため
に上方に配設されたカップホイール型研削砥石と、該カ
ップホイール型研削砥石を下端へ固定し昇降手段を介設
させて昇降自在に基体へ担持され且つ自回転するスピン
ドル軸とを備え、前記チャック機構の回転軸芯と前記ス
ピンドル軸の回転軸芯とを略平行状態で且つカップホイ
ール型研削砥石の研削面は少なくとも半導体ウエハの中
心点を通過する一定間隔を有して配設された自動平面研
削盤を用いて、前記半導体ウエハの上面へ前記昇降手段
で一定微速度でカップホイール型研削砥石を降下させて
設定量の削り代を仕上げ研削し、設定量の削り代を研削
終了後の最下位置で一定時間昇降を停止させると共に、
前記半導体ウエハの上面と前記カップホイール型研削砥
石の研削面とを離脱させるとき前記昇降手段によって微
速度で上昇させることを特徴とする半導体ウエハの研削
方法。
1. A chuck mechanism that is fitted onto a table and rotates on its own, a semiconductor wafer that is vacuum-adsorbed to the chuck mechanism, and a cup wheel type disposed above for mirror-grinding the top surface of the semiconductor wafer. A grinding wheel, a spindle shaft which fixes the cup wheel type grinding wheel to the lower end and is supported on a base so as to be able to rise and fall freely with a lifting means interposed therebetween, and which rotates by itself, and the rotational axis of the chuck mechanism and the spindle shaft The semiconductor wafer is ground using an automatic surface grinder, which is disposed substantially parallel to the rotation axis of the semiconductor wafer and with the grinding surface of the cup wheel type grinding wheel having a constant interval passing through at least the center point of the semiconductor wafer. A cup wheel type grinding wheel is lowered to the upper surface at a constant slow speed by the lifting means to finish grinding a set amount of cutting allowance, and after finishing grinding the set amount of cutting allowance, the lifting and lowering is stopped for a certain period of time at the lowest position. With,
A method for grinding a semiconductor wafer, characterized in that when the upper surface of the semiconductor wafer and the grinding surface of the cup wheel type grinding wheel are separated, the lifting means raises the grinding wheel at a very low speed.
JP14657291A 1991-05-23 1991-05-23 Method for grinding semiconductor wafer Pending JPH04346228A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14657291A JPH04346228A (en) 1991-05-23 1991-05-23 Method for grinding semiconductor wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14657291A JPH04346228A (en) 1991-05-23 1991-05-23 Method for grinding semiconductor wafer

Publications (1)

Publication Number Publication Date
JPH04346228A true JPH04346228A (en) 1992-12-02

Family

ID=15410728

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14657291A Pending JPH04346228A (en) 1991-05-23 1991-05-23 Method for grinding semiconductor wafer

Country Status (1)

Country Link
JP (1) JPH04346228A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5622875A (en) * 1994-05-06 1997-04-22 Kobe Precision, Inc. Method for reclaiming substrate from semiconductor wafers
US6141349A (en) * 1998-02-13 2000-10-31 Matsushita Electric Industrial Co., Ltd. Network system

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5840266A (en) * 1981-08-31 1983-03-09 Mazda Motor Corp Cut feeding controller for grinder

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5840266A (en) * 1981-08-31 1983-03-09 Mazda Motor Corp Cut feeding controller for grinder

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5622875A (en) * 1994-05-06 1997-04-22 Kobe Precision, Inc. Method for reclaiming substrate from semiconductor wafers
US6141349A (en) * 1998-02-13 2000-10-31 Matsushita Electric Industrial Co., Ltd. Network system

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