JPH043493B2 - - Google Patents
Info
- Publication number
- JPH043493B2 JPH043493B2 JP57147474A JP14747482A JPH043493B2 JP H043493 B2 JPH043493 B2 JP H043493B2 JP 57147474 A JP57147474 A JP 57147474A JP 14747482 A JP14747482 A JP 14747482A JP H043493 B2 JPH043493 B2 JP H043493B2
- Authority
- JP
- Japan
- Prior art keywords
- pressure
- operational amplifier
- output
- pressure sensor
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/50—Devices controlled by mechanical forces, e.g. pressure
Landscapes
- Measuring Fluid Pressure (AREA)
- Indication And Recording Devices For Special Purposes And Tariff Metering Devices (AREA)
- Pressure Sensors (AREA)
Description
【発明の詳細な説明】
この発明は、圧力検出装置の高性能化を図つた
ものに関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a pressure detection device with improved performance.
従来、この種の装置として第１図に示すものが
あつた。図において、３は半導体圧力センサ、１
４，１５はこの半導体圧力センサ３に接続された
オペアンプ、１６はオペアンプ１５に接続された
オペアンプ、１はオペアンプ１６の出力端子と入
力端子間に接続された感温抵抗、２２はオペアン
プ１６に接続されたオペアンプ、４〜１３，１８
〜２１は抵抗である。 Conventionally, there has been a device of this type as shown in FIG. In the figure, 3 is a semiconductor pressure sensor, 1
4 and 15 are operational amplifiers connected to this semiconductor pressure sensor 3; 16 are operational amplifiers connected to the operational amplifier 15; 1 is a temperature-sensitive resistor connected between the output terminal and the input terminal of the operational amplifier 16; and 22 is connected to the operational amplifier 16. Op-amps, 4-13, 18
~21 is the resistance.
次に動作について説明する。半導体圧力センサ
３によつて圧力−電気変換された電気信号は、オ
ペアンプ１４，１５で増幅され、単一出力に変換
される。この単一出力は次にオペアンプ１６によ
り増幅されるが、該オペアンプ１６では感温抵抗
１を介して出力が入力にフイードバツクされてい
るので、温度により増幅率が変化する。ここで、
抵抗１２の抵抗値をR12、抵抗１３の抵抗値を
R13、感温抵抗１の抵抗値をR1（Ｔ）（Ｔは温度）
とすると、オペアンプ１６による増幅回路の増幅
率A16は、次式で表わされる。 Next, the operation will be explained. The electrical signal subjected to pressure-to-electrical conversion by the semiconductor pressure sensor 3 is amplified by operational amplifiers 14 and 15 and converted into a single output. This single output is then amplified by the operational amplifier 16, but since the output is fed back to the input via the temperature sensitive resistor 1 in the operational amplifier 16, the amplification factor changes depending on the temperature. here,
The resistance value of resistor 12 is R 12 and the resistance value of resistor 13 is
R 13 , the resistance value of temperature sensitive resistor 1 is R 1 (T) (T is temperature)
Then, the amplification factor A16 of the amplifier circuit using the operational amplifier 16 is expressed by the following equation.
A16＝R1（Ｔ）・R13／（R1（Ｔ
）＋R13）・R12｝
従つて、このオペアンプ１６による増幅回路の
増幅度A16に、圧力センサ３の感度温度変化を補
償するような温度特性をもたせれば、感度温度変
化をほとんどなくすることができる。そしてその
出力は次にオペアンプ２２により所定の圧力−圧
力検出出力特性になるよう増幅される。 A 16 = R 1 (T)・R 13 / (R 1 (T)
) + R 13 )・R 12 } Therefore, if the amplification degree A 16 of the amplifier circuit using this operational amplifier 16 has a temperature characteristic that compensates for the sensitivity temperature change of the pressure sensor 3, the sensitivity temperature change can be almost eliminated. be able to. The output is then amplified by the operational amplifier 22 so as to have a predetermined pressure-pressure detection output characteristic.
従来の半導体圧力検出装置は以上のように構成
されているので、半導体圧力センサの圧力−セン
サ出力特性において、第３図ａの破線に示すよう
な非直線性が存在する場合、オペアンプ２２の出
力にも第３図ｅの破線で示すように同様の非直線
性が現われるという欠点があつた。従つて、装置
全体として第３図ｅの実線に示すように直線性の
よい圧力−圧力検出出力特性を得るには、第３図
ａの実線で示すように直線性のよい半導体圧力セ
ンサを使用し、オペアンプ２２の出力も第３図ｅ
の実線のように直線性のよいものになるようにす
る必要があつた。 Since the conventional semiconductor pressure detection device is configured as described above, if there is nonlinearity as shown by the broken line in FIG. 3a in the pressure-sensor output characteristic of the semiconductor pressure sensor, the output of the operational amplifier 22 However, as shown by the broken line in FIG. 3e, similar nonlinearity appeared. Therefore, in order to obtain pressure-pressure detection output characteristics with good linearity as shown by the solid line in Figure 3e for the entire device, a semiconductor pressure sensor with good linearity as shown by the solid line in Figure 3a should be used. The output of the operational amplifier 22 is also shown in Fig. 3e.
It was necessary to obtain good linearity as shown by the solid line.
この発明は上記のような従来のものの欠点を除
去するためになされたもので、感度温度補償回路
として接合分離半導体抵抗を用い、該接合分離半
導体抵抗を接合逆バイアスして非直線性補償機能
を持たせることにより、圧力−センサ出力特性に
おける直線性が良好でない圧力センサを用いても
直線性の良い圧力−出力特性が得られる圧力検出
装置を安価に提供することを目的としている。 This invention was made in order to eliminate the drawbacks of the conventional ones as described above, and uses a junction-separated semiconductor resistor as a sensitivity temperature compensation circuit, and reverse-biases the junction-separated semiconductor resistor to perform a nonlinearity compensation function. It is an object of the present invention to provide a pressure detection device at a low cost that can obtain pressure-output characteristics with good linearity even if a pressure sensor with poor linearity in the pressure-sensor output characteristics is used.
以下、この発明の一実施例を図について説明す
る。第２図において、３は半導体圧力センサ、１
４，１５，１６，２２は半導体圧力センサ３の出
力を増幅するオペアンプ、１７はオペアンプ１６
の出力端子と反転入力端子間に接続された接合分
離半導体拡散抵抗、４〜１３，１８〜２１は抵抗
である。第４図は接合分離半導体拡散抵抗を示す
断面図で、図において、２３はＮ形半導体基板、
２４はＰ形拡散層、２５，２６，２７は電極であ
り、電極２５，２６はそれぞれオペアンプ１６の
入力端子、出力端子に、電極２７はオペアンプの
正側電源端子に接続されている。 An embodiment of the present invention will be described below with reference to the drawings. In Fig. 2, 3 is a semiconductor pressure sensor;
4, 15, 16, 22 are operational amplifiers that amplify the output of the semiconductor pressure sensor 3; 17 is an operational amplifier 16;
Junction-separated semiconductor diffused resistors 4 to 13 and 18 to 21 are resistors connected between the output terminal and the inverting input terminal. FIG. 4 is a cross-sectional view showing a junction-isolated semiconductor diffused resistor. In the figure, 23 is an N-type semiconductor substrate;
24 is a P-type diffusion layer, and 25, 26, and 27 are electrodes. The electrodes 25 and 26 are connected to the input terminal and output terminal of the operational amplifier 16, respectively, and the electrode 27 is connected to the positive side power supply terminal of the operational amplifier.
次に動作について説明する。 Next, the operation will be explained.
半導体圧力センサ３に加えられた圧力は、電気
信号に変換され、オペアンプ１４，１５で構成さ
れる差動増幅回路で単一出力に変換され、オペア
ンプ１６で増幅されるが、オペアンプ１６の出力
は接合分離半導体拡散抵抗１７を介して反転入力
端子にフイードバツクされているので、オペアン
プ１６の増幅率は接合分離半導体拡散抵抗１７の
抵抗値R17により変化する。この抵抗値R17は第
３図ｂに示すように接合逆バイアスにより変化す
る。即ち、この拡散抵抗１７（24）は電極（27）
を介して印加される電圧と拡散抵抗自身の電位差
に依存して抵抗値が変化するもので、より詳しく
は拡散抵抗１７（24）に印加される逆バイアスに
より、拡散抵抗１７（24）内にも空乏層が広がり
実質的な抵抗値が増加するものである。接合逆バ
イアス電圧が第３図ｃに示すように圧力により変
化する場合、圧力とオペアンプ１６による増幅回
路の増幅率A16は第３図ｄの破線に示すような関
係になる。従つて、第３図ａの破線に示す圧力セ
ンサの非直線性はこれによつて補償され、オペア
ンプ２２の出力は第３図ｅの実線に示すようにな
る。 The pressure applied to the semiconductor pressure sensor 3 is converted into an electrical signal, converted into a single output by a differential amplifier circuit composed of operational amplifiers 14 and 15, and amplified by an operational amplifier 16, but the output of the operational amplifier 16 is Since the signal is fed back to the inverting input terminal via the junction-isolated semiconductor diffused resistor 17, the amplification factor of the operational amplifier 16 changes depending on the resistance value R17 of the junction-isolated semiconductor diffused resistor 17. This resistance value R 17 changes with junction reverse bias as shown in FIG. 3b. That is, this diffused resistor 17 (24) is the electrode (27)
The resistance value changes depending on the voltage applied through the diffused resistor 17 (24) and the potential difference between the diffused resistor itself.More specifically, due to the reverse bias applied to the diffused resistor 17 (24), Also, the depletion layer expands and the effective resistance value increases. When the junction reverse bias voltage changes with pressure as shown in FIG. 3c, the relationship between the pressure and the amplification factor A16 of the amplifier circuit using the operational amplifier 16 is as shown by the broken line in FIG. 3d. Therefore, the non-linearity of the pressure sensor shown by the dashed line in FIG. 3a is compensated for, and the output of the operational amplifier 22 becomes as shown by the solid line in FIG. 3e.
即ち、半導体センサの圧力−センサ出力特性に
おいて非直線性が生じる領域、つまり大出力領域
ではそのセンサ出力の低下を補正するように、接
合分離半導体抵抗に印加される逆バイアス電圧は
大きくなる。つまり、接合分離半導体抵抗に印加
する逆バイアス電圧をオペアンプ１６の非反転入
力からとり入れることにより、センサに加わる圧
力の増加に伴つて逆バイアス電圧が大きくなるよ
うに構成し、オペアンプ１６の帰還抵抗でもある
接合分離半導体抵抗の抵抗値をセンサ出力の増大
とともに大きくし、センサ出力が非線型となる領
域ではオペアンプ１６の増幅率を非線型に増大さ
せることにより、その出力の低下を補い非直線性
を補正する。 That is, in a region where nonlinearity occurs in the pressure-sensor output characteristic of the semiconductor sensor, that is, in a large output region, the reverse bias voltage applied to the junction-separated semiconductor resistor increases so as to compensate for the decrease in the sensor output. In other words, by taking in the reverse bias voltage applied to the junction-isolated semiconductor resistor from the non-inverting input of the operational amplifier 16, the configuration is such that the reverse bias voltage increases as the pressure applied to the sensor increases, and the feedback resistor of the operational amplifier 16 also increases. The resistance value of a certain junction-separated semiconductor resistor is increased as the sensor output increases, and in the region where the sensor output becomes nonlinear, the amplification factor of the operational amplifier 16 is increased nonlinearly, thereby compensating for the decrease in the output and suppressing the nonlinearity. to correct.
なお、このとき圧力センサ出力が圧力に対して
直線性を有する部分に対応する領域では半導体抵
抗の抵抗値は圧力に対し一定値であつてもよい
が、第３図ｂに示すような特性であつても事実上
第３図ｅに示された補正特性を得ることができ
る。 At this time, in the region corresponding to the part where the pressure sensor output has linearity with respect to pressure, the resistance value of the semiconductor resistor may be a constant value with respect to pressure, but it may have the characteristics as shown in Figure 3b. In fact, the correction characteristic shown in FIG. 3e can be obtained even in this case.
また、この逆バイアス電圧は第３図ｃに示すよ
うに圧力だけで一義的に決まる。その理由は、温
度上昇による圧力信号（センサ出力）の低下は、
先述の式A16＝R1（Ｔ）・R13／｛（R1（Ｔ）＋R13）・
R12｝により補正されるので、圧力信号の温度依
存性は、抵抗の温度依存性によつて補正されるた
めである。 Moreover, this reverse bias voltage is uniquely determined only by the pressure, as shown in FIG. 3c. The reason is that the pressure signal (sensor output) decreases due to temperature rise.
The above formula A 16 = R 1 (T)・R 13 / {(R 1 (T) + R 13 )・
This is because the temperature dependence of the pressure signal is corrected by the temperature dependence of the resistance.
そして、この半導体拡散抵抗は正の温度係数を
有しており、このためオペアンプの増幅度におい
て、上記の式で示されるようにセンサの温度特性
を補償するための温度補償抵抗に、センサの非直
線補正の機能を持たせることができるので、セン
サ出力の温度特性補正と圧力−電気信号変換特性
の非直線性を同時に補償することができる。 This semiconductor diffused resistor has a positive temperature coefficient, and therefore, at the amplification level of the operational amplifier, the temperature compensation resistor for compensating for the temperature characteristics of the sensor is Since the linear correction function can be provided, it is possible to simultaneously correct the temperature characteristic of the sensor output and compensate for the nonlinearity of the pressure-electrical signal conversion characteristic.
なお、上記実施例では圧力センサに半導体圧力
センサを用いた例について説明したが、差動トラ
ンスとダイヤフラムからなるもの、磁気抵抗素子
とダイヤフラムからなるもの、ダイヤフラムと容
量からなるもの等の他の圧力センサであつても上
記実施例と同様の効果を奏する。 In addition, in the above embodiment, an example in which a semiconductor pressure sensor is used as the pressure sensor was explained, but other pressure sensors such as one consisting of a differential transformer and a diaphragm, one consisting of a magnetoresistive element and a diaphragm, and one consisting of a diaphragm and a capacitor, etc. Even when a sensor is used, the same effects as in the above embodiment can be achieved.
以上のように、この発明によれば、圧力センサ
の非直線性補償を、接合逆バイアスされた接合分
離半導体抵抗からなる感度温度補償回路で行うよ
うにしたので、装置が安価にでき、また、精度の
高いものが得られる効果がある。 As described above, according to the present invention, the nonlinearity compensation of the pressure sensor is performed by the sensitivity temperature compensation circuit made of the junction-reverse biased junction-separated semiconductor resistor, so that the device can be made inexpensive, and This has the effect of obtaining highly accurate products.
第１図は従来の半導体圧力検出装置を示す回路
図、第２図は本発明の一実施例による圧力検出装
置を示す回路図、第３図は従来および本発明装置
の動作説明のための各種特性図、第４図は接合分
離形半導体抵抗の断面図である。
３……圧力センサ、２２……オペアンプ（演算
増幅器）、１７……接合分離形半導体拡散抵抗。
なお図中同一符号は同一又は相当部分を示す。
FIG. 1 is a circuit diagram showing a conventional semiconductor pressure detection device, FIG. 2 is a circuit diagram showing a pressure detection device according to an embodiment of the present invention, and FIG. The characteristic diagram, FIG. 4, is a sectional view of a junction-separated semiconductor resistor. 3... Pressure sensor, 22... Operational amplifier (operational amplifier), 17... Junction isolated semiconductor diffused resistor.
Note that the same reference numerals in the figures indicate the same or equivalent parts.
Claims (1)
圧力センサの出力が反転入力され該圧力センサの
出力を増幅する演算増幅器と、 該演算増幅器の非反転入力信号が接合逆バイア
ス電圧として印加され上記演算増幅器の出力をそ
の反転入力に帰還して上記圧力センサの感度温度
補償および該圧力センサの圧力−電気信号変換特
性の非直線性補償を同時に行なう接合分離半導体
抵抗とを備えたことを特徴とする圧力検出装置。[Scope of Claims] 1. A pressure sensor that converts pressure into an electrical signal, an operational amplifier to which the output of the pressure sensor is inverted and amplified, and a non-inverted input signal of the operational amplifier is inverted. a junction-separated semiconductor resistor that is applied as a bias voltage and feeds back the output of the operational amplifier to its inverting input to simultaneously compensate for the sensitivity temperature of the pressure sensor and compensate for the nonlinearity of the pressure-electrical signal conversion characteristic of the pressure sensor; A pressure detection device characterized by comprising:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57147474A JPS5935481A (en) | 1982-08-23 | 1982-08-23 | Pressure detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57147474A JPS5935481A (en) | 1982-08-23 | 1982-08-23 | Pressure detector |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5935481A JPS5935481A (en) | 1984-02-27 |
| JPH043493B2 true JPH043493B2 (en) | 1992-01-23 |
Family
ID=15431203
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57147474A Granted JPS5935481A (en) | 1982-08-23 | 1982-08-23 | Pressure detector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5935481A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106525318B (en) * | 2016-12-16 | 2022-07-01 | 山东金洲科瑞节能科技有限公司 | Bus type pressure measuring device |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5832646B2 (en) * | 1978-09-08 | 1983-07-14 | 株式会社東芝 | pressure transmitter |
| JPS5941134B2 (en) * | 1980-04-15 | 1984-10-04 | 富士電機株式会社 | pressure transducer |
-
1982
- 1982-08-23 JP JP57147474A patent/JPS5935481A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5935481A (en) | 1984-02-27 |
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