JPH0436255U - - Google Patents
Info
- Publication number
- JPH0436255U JPH0436255U JP7773990U JP7773990U JPH0436255U JP H0436255 U JPH0436255 U JP H0436255U JP 7773990 U JP7773990 U JP 7773990U JP 7773990 U JP7773990 U JP 7773990U JP H0436255 U JPH0436255 U JP H0436255U
- Authority
- JP
- Japan
- Prior art keywords
- diffusion layer
- type
- semiconductor substrate
- type semiconductor
- photothyristor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000009792 diffusion process Methods 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- 239000012535 impurity Substances 0.000 claims 1
Landscapes
- Thyristors (AREA)
Description
第１図は本案の一実施例の略断面図、第２図は
他の実施例の略断面図、第３図は従来例の略断面
図である。
１……Ｎ型半導体基板、２……アノード拡散層
、３……Ｐゲート拡散層、４……カソード拡散層
、８……Ｎ型拡散層。
FIG. 1 is a schematic sectional view of one embodiment of the present invention, FIG. 2 is a schematic sectional view of another embodiment, and FIG. 3 is a schematic sectional view of a conventional example. 1... N-type semiconductor substrate, 2... Anode diffusion layer, 3... P-gate diffusion layer, 4... Cathode diffusion layer, 8... N-type diffusion layer.
Claims (1)
ード拡散層との間のＮ型の領域とその表面の絶縁
膜との界面に、Ｎ型半導体基板の不純物濃度より
も高い濃度のＮ型拡散層を形成したフオトサイリ
スタ。 An N-type diffusion layer with an impurity concentration higher than that of the N-type semiconductor substrate is formed at the interface between the N-type region between the P gate diffusion layer and the anode diffusion layer on the surface of the N-type semiconductor substrate and the insulating film on the surface. photothyristor formed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1990077739U JP2521745Y2 (en) | 1990-07-20 | 1990-07-20 | Photo thyristor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1990077739U JP2521745Y2 (en) | 1990-07-20 | 1990-07-20 | Photo thyristor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0436255U true JPH0436255U (en) | 1992-03-26 |
| JP2521745Y2 JP2521745Y2 (en) | 1997-01-08 |
Family
ID=31620401
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1990077739U Expired - Lifetime JP2521745Y2 (en) | 1990-07-20 | 1990-07-20 | Photo thyristor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2521745Y2 (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS562668A (en) * | 1979-06-21 | 1981-01-12 | Nec Corp | Planar type thyristor |
| JPS6353973A (en) * | 1986-08-22 | 1988-03-08 | Sharp Corp | Photothyristor chip |
-
1990
- 1990-07-20 JP JP1990077739U patent/JP2521745Y2/en not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS562668A (en) * | 1979-06-21 | 1981-01-12 | Nec Corp | Planar type thyristor |
| JPS6353973A (en) * | 1986-08-22 | 1988-03-08 | Sharp Corp | Photothyristor chip |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2521745Y2 (en) | 1997-01-08 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |