JPH0465461U - - Google Patents
Info
- Publication number
- JPH0465461U JPH0465461U JP10877290U JP10877290U JPH0465461U JP H0465461 U JPH0465461 U JP H0465461U JP 10877290 U JP10877290 U JP 10877290U JP 10877290 U JP10877290 U JP 10877290U JP H0465461 U JPH0465461 U JP H0465461U
- Authority
- JP
- Japan
- Prior art keywords
- diffusion layer
- gate
- depth
- anode
- channel stopper
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000009792 diffusion process Methods 0.000 claims description 14
- 239000004065 semiconductor Substances 0.000 claims description 2
- 239000000758 substrate Substances 0.000 claims description 2
Landscapes
- Thyristors (AREA)
Description
第１図は本案の一実施例の略断面図、第２図は
従来の一例の略断面図である。
１……Ｎ型半導体基板、２……アノード拡散層
、３……Ｐゲート拡散層、４……チヤネルストツ
パー拡散層、５……カソード拡散層。
FIG. 1 is a schematic sectional view of an embodiment of the present invention, and FIG. 2 is a schematic sectional view of a conventional example. DESCRIPTION OF SYMBOLS 1... N-type semiconductor substrate, 2... Anode diffusion layer, 3... P gate diffusion layer, 4... Channel stopper diffusion layer, 5... Cathode diffusion layer.
Claims (1)
ート拡散層と、Ｐゲート拡散層の一部に設けられ
たカソード拡散層と、Ｐゲート拡散層とアノード
拡散層との間に設けられたチヤネルストツパー拡
散層とを形成し、チヤネルストツパー拡散層の拡
散深さをＰゲート拡散層の深さ以上としたスイツ
チング素子。 An anode diffusion layer, a P gate diffusion layer, a cathode diffusion layer provided in a part of the P gate diffusion layer, and a channel stop provided between the P gate diffusion layer and the anode diffusion layer are formed on the surface of the semiconductor substrate. A switching element in which a channel stopper diffusion layer is formed, and the diffusion depth of the channel stopper diffusion layer is greater than the depth of a P gate diffusion layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10877290U JPH0465461U (en) | 1990-10-16 | 1990-10-16 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10877290U JPH0465461U (en) | 1990-10-16 | 1990-10-16 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0465461U true JPH0465461U (en) | 1992-06-08 |
Family
ID=31855894
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10877290U Pending JPH0465461U (en) | 1990-10-16 | 1990-10-16 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0465461U (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS562668A (en) * | 1979-06-21 | 1981-01-12 | Nec Corp | Planar type thyristor |
-
1990
- 1990-10-16 JP JP10877290U patent/JPH0465461U/ja active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS562668A (en) * | 1979-06-21 | 1981-01-12 | Nec Corp | Planar type thyristor |