JPH0436268U - - Google Patents
Info
- Publication number
- JPH0436268U JPH0436268U JP1990077611U JP7761190U JPH0436268U JP H0436268 U JPH0436268 U JP H0436268U JP 1990077611 U JP1990077611 U JP 1990077611U JP 7761190 U JP7761190 U JP 7761190U JP H0436268 U JPH0436268 U JP H0436268U
- Authority
- JP
- Japan
- Prior art keywords
- laser diode
- semiconductor laser
- light emitting
- optical
- converts
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/531—Shapes of wire connectors
- H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/59—Bond pads specially adapted therefor
Landscapes
- Optical Couplings Of Light Guides (AREA)
Description
第1図はこの考案の一実施例の3つの光導波路
を採用した半導体レーザダイオードの斜視図で、
第2図は上面図である。第3図は従来の半導体レ
ーザダイオードの斜視図で、第4図は断面図であ
る。
1……半導体レーザダイオード、2a,2b,
2c……表面電極、3a,3b,3c……ボンデ
イングワイヤ、4a,4b,4c……光導波路、
5a,5b,5c……発光部、6a,6b,6c
……光束、7……光フアイバ、8……交点。
FIG. 1 is a perspective view of a semiconductor laser diode that employs three optical waveguides according to an embodiment of this invention.
FIG. 2 is a top view. FIG. 3 is a perspective view of a conventional semiconductor laser diode, and FIG. 4 is a sectional view. 1... Semiconductor laser diode, 2a, 2b,
2c... surface electrode, 3a, 3b, 3c... bonding wire, 4a, 4b, 4c... optical waveguide,
5a, 5b, 5c... Light emitting part, 6a, 6b, 6c
...Light flux, 7...Optical fiber, 8...Intersection.
Claims (1)
オードの光導出機構において、1つのレーザダイ
オード素子に複数の光導波路、またそれに対応す
る複数の発光部を有することを特徴とする半導体
レーザーダイオード。 1. A semiconductor laser diode, which is characterized in that it has a plurality of optical waveguides in one laser diode element and a plurality of light emitting parts corresponding thereto, in a light extraction mechanism for a semiconductor laser diode that converts an electrical signal into an optical signal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1990077611U JPH0436268U (en) | 1990-07-20 | 1990-07-20 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1990077611U JPH0436268U (en) | 1990-07-20 | 1990-07-20 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0436268U true JPH0436268U (en) | 1992-03-26 |
Family
ID=31620158
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1990077611U Pending JPH0436268U (en) | 1990-07-20 | 1990-07-20 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0436268U (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009117746A (en) * | 2007-11-09 | 2009-05-28 | Anritsu Corp | External resonator type semiconductor laser device |
| JP2012195545A (en) * | 2011-03-18 | 2012-10-11 | Seiko Epson Corp | Terahertz wave generating device, camera, imaging device and measuring device |
| JP2013104804A (en) * | 2011-11-15 | 2013-05-30 | Seiko Epson Corp | Semiconductor short pulse generating device, terahertz-wave generating device, camera, imaging device, and measuring device |
| JP2023060629A (en) * | 2021-10-18 | 2023-04-28 | 日亜化学工業株式会社 | laser device |
-
1990
- 1990-07-20 JP JP1990077611U patent/JPH0436268U/ja active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009117746A (en) * | 2007-11-09 | 2009-05-28 | Anritsu Corp | External resonator type semiconductor laser device |
| JP2012195545A (en) * | 2011-03-18 | 2012-10-11 | Seiko Epson Corp | Terahertz wave generating device, camera, imaging device and measuring device |
| JP2013104804A (en) * | 2011-11-15 | 2013-05-30 | Seiko Epson Corp | Semiconductor short pulse generating device, terahertz-wave generating device, camera, imaging device, and measuring device |
| JP2023060629A (en) * | 2021-10-18 | 2023-04-28 | 日亜化学工業株式会社 | laser device |